Upper half-moon graphite piece structure for silicon carbide epitaxy

Abstract

The utility model discloses an upper half-moon graphite piece structure for silicon carbide epitaxy, which comprises an upper half-moon graphite platform deck and a graphite flat plate, the graphite flat plate is detachably connected with the upper half-moon graphite platform deck, and the graphite flat plate can be taken out from the upper half-moon graphite platform deck to be cleaned or replaced. The upper half-moon graphite platform deck and the upper half-moon graphite flat plate are separated, replaced and cleaned, the upper half-moon graphite platform deck can be repeatedly used, the accumulated deposition thickness of Sic extension on the upper half-moon graphite piece is reduced through replacement of the upper half-moon graphite flat plate, the polishing and cleaning difficulty of the upper half-moon graphite piece is reduced, and the polishing efficiency is improved. Growth defects possibly caused by the upper half-moon graphite piece are reduced, the replacement cost of the upper half-moon graphite piece is reduced, and the storage space of the upper half-moon graphite piece is saved.

Description

Technical Field

[0001] The utility model relates to the field of manufacturing SiC epitaxial graphite accessories, in particular to an upper half-moon graphite piece structure for silicon carbide epitaxy. Background Art

[0002] At present, the existing upper half of the moon graphite parts are integrated graphite parts, and the upper half of the moon graphite parts are replaced as a whole. The Sic epitaxial cumulative deposition thickness of the upper half of the moon graphite parts increases with the increase of use time. The upper half of the moon graphite parts are difficult to polish and clean, the replacement cost is high, and the storage space is large. Summary of the invention

[0003] In order to overcome the shortcomings and deficiencies in the prior art, the utility model aims to provide an upper half-moon graphite piece structure for silicon carbide epitaxy.

[0004] The purpose of the utility model is achieved through the following technical solutions: a half-moon graphite structure for silicon carbide epitaxy, including a half-moon graphite carrier and a graphite flat plate, the graphite flat plate is detachably connected to the half-moon graphite carrier, and the graphite flat plate can be taken out from the half-moon graphite carrier for cleaning or replacement. The half-moon graphite carrier and the graphite flat plate are separable structures. When the graphite flat plate is used for a long time, a thicker SiC epitaxial layer will be accumulated and deposited. The graphite flat plate can be taken out from the half-moon graphite carrier for cleaning or replacement, and the graphite flat plate is easy to clean after being disassembled. It is not necessary to replace it together with the half-moon graphite carrier, so as to reduce the difficulty of polishing and cleaning the half-moon graphite parts, reduce the growth defects that may be caused by the half-moon graphite parts, reduce the replacement cost of the half-moon graphite parts, and save the storage space of the half-moon graphite parts.

[0005] As an improvement of the structure of the upper half-moon graphite piece for silicon carbide epitaxy of the utility model, a plurality of screw holes are arranged at intervals on the graphite flat plate, and the upper half-moon graphite carrier has a mounting plane, and a screw countersunk hole is arranged on the mounting plane corresponding to the position of each screw hole;

[0006] It also includes a graphite screw, which is inserted into the screw countersunk hole from the bottom of the mounting plane and is screwed with the screw hole to fix the graphite plate.

[0007] As an improvement to the structure of the upper half-moon graphite piece for silicon carbide epitaxy of the utility model, the cross section of the upper half-moon graphite carrier is a hollow D-shape.

[0008] As an improvement of the upper half-moon graphite structure for silicon carbide epitaxy of the utility model, the width of the graphite plate is smaller than the width of the mounting plane, and the two side edges of the mounting plane and the two side edges of the graphite plate form a step. The step is used to achieve snap fit with the lower half-moon graphite structure and has a positioning function.

[0009] As an improvement to the structure of the upper half-moon graphite piece for silicon carbide epitaxy of the utility model, a temperature measuring hole is provided on the bottom surface of the installation plane.

[0010] The beneficial effects of the utility model are as follows: the upper half-moon graphite carrier of the utility model is separated, replaced, and cleaned from the upper half-moon graphite flat plate, the upper half-moon graphite carrier can be reused, the accumulated deposition thickness of Sic epitaxy on the upper half-moon graphite part is reduced by replacing the upper half-moon graphite flat plate, the difficulty of polishing and cleaning the upper half-moon graphite part is reduced, the growth defects that may be caused by the upper half-moon graphite part are reduced, the replacement cost of the upper half-moon graphite part is reduced, and the storage space of the upper half-moon graphite part is saved. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 It is the front view of the utility model;

[0012] Figure 2 It is a side view of the utility model;

[0013] The accompanying drawings are marked as follows: 1. upper half of the graphite carrier, 2. graphite flat plate, 3. screw hole, 4. mounting plane, 5. screw countersunk hole, 6. graphite screw, 7. temperature measuring hole. DETAILED DESCRIPTION

[0014] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0015] It should be noted that all directional indications (such as up, down, left, right, front, back...) in the embodiments of the present invention are only used to explain the relative position relationship, movement status, etc. between the components under a specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0016] In addition, the descriptions of "first", "second", etc. in the present utility model are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present utility model.

[0017] like Figure 1 and Figure 2 As shown, a half-moon graphite structure for silicon carbide epitaxy includes a half-moon graphite carrier 1 and a graphite plate 2. The graphite plate 2 is detachably connected to the half-moon graphite carrier 1, and the graphite plate 2 can be taken out from the half-moon graphite carrier 1 for cleaning or replacement. The half-moon graphite carrier 1 and the graphite plate 2 are separable structures. When the graphite plate 2 is used for a long time, a thicker SiC epitaxial layer will be accumulated and deposited. The graphite plate 2 can be taken out from the half-moon graphite carrier 1 for cleaning or replacement. The graphite plate 2 is easy to clean after being disassembled. It is not necessary to replace it together with the half-moon graphite carrier 1, so as to reduce the difficulty of polishing and cleaning the half-moon graphite parts, reduce the growth defects that may be caused by the half-moon graphite parts, reduce the replacement cost of the half-moon graphite parts, and save the storage space of the half-moon graphite parts. The graphite plate can be reused after cleaning.

[0018] Preferably, a plurality of screw holes 3 are provided at intervals on the graphite flat plate 2, and a mounting plane 4 is provided on the upper half-moon graphite carrier 1, and a screw countersunk hole 5 is provided on the mounting plane 4 at a position corresponding to each screw hole 3;

[0019] It also includes a graphite screw 6 , which is inserted into the screw countersunk hole 5 from the bottom of the mounting plane 4 and is screwed with the screw hole 3 to fix the graphite plate 2 .

[0020] Preferably, the cross section of the upper half-moon graphite carrier 1 is a hollow D-shape.

[0021] Preferably, the width of the graphite plate 2 is smaller than the width of the mounting plane 4, and the two side edges of the mounting plane 4 and the two side edges of the graphite plate 2 form a step. The step is used to snap-fit ​​with the lower half-moon graphite structure and has a positioning function.

[0022] Preferably, the bottom surface of the mounting plane 4 is provided with a temperature measuring hole 7. The temperature measuring hole 7 can be installed with a temperature sensor, and the temperature sensor can detect the temperature of the upper half of the graphite piece.

[0023] Although the embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and structures of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A half-moon graphite structure for silicon carbide epitaxy, characterized in that: The invention comprises an upper half-moon graphite carrier and a graphite flat plate, wherein the graphite flat plate is detachably connected to the upper half-moon graphite carrier, and the graphite flat plate can be taken out from the upper half-moon graphite carrier for cleaning or replacement.

2. The upper half-moon graphite structure for silicon carbide epitaxy according to claim 1, characterized in that: The graphite flat plate is provided with a plurality of screw holes at intervals, the upper half-moon graphite carrier has a mounting plane, and a screw countersunk hole is provided on the mounting plane at a position corresponding to each of the screw holes; It also includes a graphite screw, which is inserted into the screw countersunk hole from the bottom of the mounting plane and is screwed with the screw hole to fix the graphite plate.

3. The upper half-moon graphite structure for silicon carbide epitaxy according to claim 2, characterized in that: The cross section of the upper half-moon graphite carrier is a hollow D-shape.

4. The upper half-moon graphite structure for silicon carbide epitaxy according to claim 2, characterized in that: The width of the graphite plate is smaller than the width of the mounting plane, and two side edges of the mounting plane and two side edges of the graphite plate form a step.

5. The upper half-moon graphite structure for silicon carbide epitaxy according to claim 2, characterized in that: The bottom surface of the installation plane is provided with a temperature measuring hole.

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