Maskless double-beam interference system

Abstract

The utility model relates to a maskless double-beam interference system which comprises a laser, a first high-reflectivity mirror, a second high-reflectivity mirror, a third high-reflectivity mirror, a semi-reflecting and semi-transmitting mirror, a first 1 / 2 wave plate, a first polarizing film, a second 1 / 2 wave plate, a second polarizing film, nine lens supports and a sample table. The incident angle and the azimuth angle of the coherent light beam are changed, the light intensity energy density of the coherent light beam is changed by adjusting the rotation angles of the 1 / 2 wave plate and the polaroid, and the period, the depth and the width of the interference micro-nano groove structure are changed by changing the incident angle, the space angle and the light intensity energy density. According to the utility model, the surface of the material is directly processed through the maskless double-beam interference system, the micro-nano groove structure with adjustable period, depth and width is prepared in one step, the preparation process is simplified, and the cost is reduced.

Description

Technical Field

[0001] This invention relates to the field of micro-nano trench structure fabrication technology, and in particular to a maskless dual-beam interference system. Background Technology

[0002] Materials and structures exhibit many novel characteristics at the micro- and nano-scale that differ from those at the macro-scale. Optimization of surface structures at the micro and nano-scale can effectively improve material surface properties, and the research on functional surfaces with micro- and nano-structures has become one of the hottest areas in current scientific research and industrial development. Among them, the study of constructing micro- and nano-groove structures on the surface of solid materials to alter optical, wettable, and biocompatibility has always been an important research problem in the field of surface engineering, demonstrating practical application value in related fields such as aerospace, biology, medicine, and energy materials. Currently, the controllable preparation system of large-area micro- and nano-groove structure surfaces is key to their widespread application and commercialization.

[0003] Based on the principle of laser coherence, two-beam interference can form periodic structures within the interference field. The minimum structural period is close to half the laser wavelength. A single exposure can fabricate large-area periodic one-dimensional linear or grooved structures. This method is significantly less expensive than ultrafast laser scanning, ion beam etching, and electron beam etching, making it suitable for large-area processing. For example, Chinese Patent Publication No. CN218332292U discloses a laser interference lithography system, including: a laser, a 45° total reflection mirror, a cubic beam splitter prism, an attenuator, a beam expander, a reflector, a collimating lens, a shearing collimator, a substrate clamping frame, an electric turntable, an angle-adjusting wedge mirror, and a phase-compensating wedge mirror, used for fabricating silicon-based microlens arrays. Chinese Patent Publication No. CN207833218U discloses a laser interference lithography system for fabricating cellular substrates with dual-period nanostructures, including: a laser, a nanoarray element beam splitting system, a high-reflectivity mirror, and a modulator, forming an interference pattern on the sample stage. Chinese Patent Publication No. CN206557526U discloses a laser interference lithography optical system, including: a beam splitter, a reflector, a flexible optical hinge, a half-wave plate, and a polarizer; the flexible optical hinge consists of a light guide tube and a joint, with every two light guide tubes connected by a joint; a reflector B is installed inside each joint; a half-wave plate is installed inside the outlet of each flexible optical hinge, and a polarizer is installed outside each outlet; the laser beam is split by the beam splitter, then reflected by the total reflection mirror and coupled into the optical hinge, and output through the end of the optical hinge. Chinese Patent Publication No. CN210281088U discloses a multi-path laser interference lithography system with co-polarized states, including a triangular pyramidal prism, a beam expander and collimator unit, a beam shaping unit, and a polarization modulation unit, to obtain multi-beam interference fringes.

[0004] Due to limitations of the laser and the inability to independently control the multidimensional parameters of the coherent beam, the aforementioned interference system cannot directly fabricate large-area micro-nano trench structures on metal surfaces. Utility Model Content

[0005] Therefore, this invention provides a maskless dual-beam interference system for one-step fabrication of micro / nano trench structures on metal surfaces with adjustable cycle and controllable trench depth and width.

[0006] To solve the above-mentioned technical problems, this utility model provides a maskless dual-beam interference system, comprising: a laser, a first high-reflection mirror, a second high-reflection mirror, a semi-reflective mirror, a third high-reflection mirror, a fourth high-reflection mirror, a first half-wave plate, a first polarizer, a second half-wave plate, a second polarizer, and a sample stage; the laser emits a laser beam toward the first high-reflection mirror, the beam reflected by the first high-reflection mirror is reflected by the second high-reflection mirror, the beam reflected by the second high-reflection mirror is reflected to the semi-reflective mirror, the semi-reflective mirror can split the beam into two beams, the two beams split by the semi-reflective mirror pass through the third high-reflection mirror and the fourth high-reflection mirror respectively, the third high-reflection mirror reflects a first coherent beam which passes through the first half-wave plate and the first polarizer, the fourth high-reflection mirror reflects a second coherent beam which passes through the second half-wave plate and the second polarizer, the third high-reflection mirror and the fourth high-reflection mirror are used to intersect the first coherent beam and the second coherent beam on the sample stage. This invention relates to a maskless dual-beam interference system. By constructing a dual-beam interference system using basic optical components and combining it with a high-power nanosecond pulse laser, a micro-nano trench structure with adjustable period and controllable trench depth and width can be directly constructed on a metal surface. The system has a simple structure and is easy to implement.

[0007] In one embodiment of the present invention, the first half-wave plate and the first polarizer constitute a first mirror group, and the first half-wave plate and the first polarizer are arranged in parallel.

[0008] In one embodiment of this utility model, the second half-wave plate and the second polarizer constitute a second mirror group, and the second half-wave plate and the second polarizer are arranged in parallel.

[0009] In one embodiment of this utility model, the line connecting the semi-reflective lens and the sample stage is in the first direction.

[0010] In one embodiment of this utility model, the line connecting the third high-reflection mirror and the fourth high-reflection mirror is a second direction, and the second direction is perpendicular to the first direction.

[0011] In one embodiment of this utility model, the first lens group and the second lens group are located on both sides of the first direction.

[0012] In one embodiment of this utility model, the third high-reflection mirror and the fourth high-reflection mirror are respectively located on both sides of the first direction.

[0013] In one embodiment of this utility model, the third high-reflection mirror and the fourth high-reflection mirror are symmetrically arranged along the first direction, and the incident angle of the first coherent beam reflected by the third high-reflection mirror and the incident angle of the second coherent beam reflected by the fourth high-reflection mirror are the same and spatially symmetrical.

[0014] In one embodiment of this utility model, the laser is a nanosecond pulse laser with a laser wavelength of 1064nm, a maximum output energy of 1J, an output spot diameter of 6mm, a single pulse width of 7ns, and a repetition frequency of 10kHz.

[0015] In one embodiment of the present invention, the dual-beam interference system further includes nine lens supports. The first high-reflection mirror, the second high-reflection mirror, the semi-reflective semi-transparent mirror, the third high-reflection mirror, the fourth high-reflection mirror, the first half-wave plate, the second half-wave plate, the first polarizer, and the second polarizer are respectively mounted on the nine lens supports. The lens supports are provided with fine-tuning knobs, which are used to fine-tune the height and angle of the lenses.

[0016] Compared with the prior art, the above-mentioned technical solution of this utility model has the following beneficial effects:

[0017] The maskless dual-beam interference system described in this invention utilizes the interaction mechanism between a high-energy nanosecond pulsed laser and matter, thus overcoming the limitations imposed by photosensitive materials on the selection of laser wavelength. It can realize nanoscale structures much smaller than the interference light wavelength. Through the design of the dual-beam interference lithography system, the incident angle and energy of the coherent beam can be independently controlled. Combined with the high-energy nanosecond pulsed laser, it is possible to realize the large-area fabrication of micro-nano trench structures on metal surfaces. Attached Figure Description

[0018] To make the content of this utility model easier to understand, the present utility model will be further described in detail below with reference to specific embodiments and accompanying drawings.

[0019] Figure 1 This is a schematic diagram of the maskless dual-beam interference system in a preferred embodiment of the present invention;

[0020] Figure 2 This is an effect diagram of Example 1 of the preferred embodiment of the present invention, showing the micro-nano trenches prepared on the surface of a titanium alloy using a dual-beam interference system;

[0021] Figure 3This is a rendering of Example 2 of the preferred embodiment of the present invention, showing the micro-nano trenches fabricated on the surface of a titanium alloy using a dual-beam interference system.

[0022] Explanation of the reference numerals in the accompanying drawings: Laser 1, First high-reflection mirror 2, Second high-reflection mirror 3, Semi-reflective half-lens 4, Third high-reflection mirror 5, Fourth high-reflection mirror 6, First half-wave plate 7, First polarizer 8, Second half-wave plate 9, Second polarizer 10, Sample stage 11. Detailed Implementation

[0023] The present invention will be further described below with reference to the accompanying drawings and specific embodiments, so that those skilled in the art can better understand and implement the present invention. However, the embodiments are not intended to limit the present invention.

[0024] Example 1

[0025] Reference Figure 1 As shown, the maskless two-beam interferometry system of this invention includes: a laser 1, a first high-reflection mirror 2, a second high-reflection mirror 3, a semi-reflective mirror 4, a third high-reflection mirror 5, a fourth high-reflection mirror 6, a first half-wave plate 7, a first polarizer 8, a second half-wave plate 9, a second polarizer 10, and a sample stage 11; the laser 1 emits a laser beam toward the first high-reflection mirror 2, the beam reflected by the first high-reflection mirror 2 is reflected by the second high-reflection mirror 3, and the beam reflected by the second high-reflection mirror 3 is reflected to the semi-reflective mirror. The mirror 4, a semi-reflective mirror 4, can split two beams of light. The two beams split by the semi-reflective mirror 4 pass through the third high-reflection mirror 5 and the fourth high-reflection mirror 6, respectively. The third high-reflection mirror 5 reflects a first coherent beam that passes through the first half-wave plate 7 and the first polarizer 8. The fourth high-reflection mirror 6 reflects a second coherent beam that passes through the second half-wave plate 9 and the second polarizer 10. The third high-reflection mirror 5 and the fourth high-reflection mirror 6 are used to intersect the first coherent beam and the second coherent beam on the sample stage 11.

[0026] The dual-beam interference system also includes nine lens supports. The first high-reflection mirror 2, the second high-reflection mirror 3, the semi-reflective mirror 4, the third high-reflection mirror 5, the fourth high-reflection mirror 6, the first half-wave plate 7, the first polarizer 8, the second half-wave plate 9, and the second polarizer 10 are respectively mounted on the nine lens supports. The lens supports are equipped with fine-tuning knobs, which are used to fine-tune the height and angle of the lenses.

[0027] In the above structure, the first half-wave plate 7 and the first polarizer 8 constitute a first mirror group, and the first half-wave plate 7 and the first polarizer 8 are arranged in parallel. The second half-wave plate 9 and the second polarizer 10 constitute a second mirror group, and the second half-wave plate 9 and the second polarizer 10 are arranged in parallel. The first mirror group and the second mirror group are located on opposite sides of a first direction.

[0028] In the above structure, the line connecting the semi-reflective mirror 4 and the sample stage 11 is the first direction. The line connecting the third high-reflection mirror 5 and the fourth high-reflection mirror 6 is the second direction, which is perpendicular to the first direction. The third high-reflection mirror 5 and the fourth high-reflection mirror 6 are located on opposite sides of the first direction. The third high-reflection mirror 5 and the fourth high-reflection mirror 6 are symmetrically arranged along the first direction, and the incident angles of the first coherent beam reflected by the third high-reflection mirror 5 and the second coherent beam reflected by the fourth high-reflection mirror 6 are the same and spatially symmetrical.

[0029] In the above structure, the laser 1 is a nanosecond pulse laser, the laser wavelength of the laser 1 is 1064nm, the maximum output energy of the laser 1 is 1J, the output spot diameter of the laser 1 is 6mm, the single pulse width of the laser 1 is 7ns, and the repetition frequency of the laser 1 is 10kHz.

[0030] The relative positions of the semi-reflective mirror 4, the third high-reflection mirror 5, and the fourth high-reflection mirror 6 have a definite correspondence with the incident angle of the coherent beam. The incident angle has a unique and definite correspondence with the period of the micrometer-level trench structure. The rotation angles of the half-wave plate and the polarizer have a definite correspondence with the nanometer-level structure on the surface of the micrometer-level trench structure.

[0031] The working method of this invention for fabricating micro / nano trenches on metal surfaces using a maskless two-beam interferometry system includes the following steps:

[0032] First, a trench structure with a period of d = 10 μm is prepared by calculating d = λ / 2 sinθ. The incident angle θ of the coherent beam is 3.05°. The relative positions of the first high-reflection mirror 2, the second high-reflection mirror 3, the half-reflection half-lens 4, the third high-reflection mirror 5, the fourth high-reflection mirror 6 and the sample stage 11 are calculated according to the Pythagorean theorem, so that the incident angles of the first coherent beam and the second coherent beam are the same, both being 3.05°.

[0033] Then, the height and angle of the first high-reflection mirror 2, the second high-reflection mirror 3, the semi-reflective mirror 4, the third high-reflection mirror 5, and the fourth high-reflection mirror 6 are finely adjusted so that the beam passes through the center of the lens, and the beam propagation direction is controlled so that the first coherent beam and the second coherent beam intersect at the sample stage 11.

[0034] Finally, a set of half-wave plates and polarizers is positioned along and perpendicular to the propagation direction of the first coherent beam, and a second set of half-wave plates and polarizers is positioned along and perpendicular to the propagation direction of the second coherent beam. The orientation of the half-wave plates and polarizers is finely adjusted using knobs to ensure that the energy density of both the first and second coherent beams is the same at 0.245 J / cm². 2 Micro-nano trench structures were fabricated on the surface of titanium alloy, with a period of 10 μm, a trench depth of 2 μm, and a trench width of 1 μm. Figure 2 As shown.

[0035] Example 2

[0036] The difference from Embodiment 1 lies in adjusting the position and rotation angle of the third high-reflection mirror 5 and the fourth high-reflection mirror 6 so that the incident angles of the first and second coherent beams are the same at 1.5°. The directions of the half-wave plate and polarizer are finely adjusted by rotating the knobs to change the energy density of the first and second coherent beams to be the same at 0.345 J / cm². 2 Micro-nano trench structures were fabricated on the surface of titanium alloy, with a period of 20 μm, a trench depth of 4 μm, and a trench width of 2 μm. Figure 3 As shown.

[0037] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the protection scope of this invention.

Claims

1. A maskless dual-beam interferometer system, characterized in that: include: Laser, a first high-reflection mirror, a second high-reflection mirror, a half-reflection half-transmission mirror, a third high-reflection mirror, a fourth high-reflection mirror, a first 1 / 2 wave plate, a first polarizer, a second 1 / 2 wave plate, a second polarizer and a sample stage; The laser emits a laser beam toward the first high-reflective mirror, the light beam reflected by the first high-reflective mirror is reflected by the second high-reflective mirror, the light beam reflected by the second high-reflective mirror reaches a half-reflective half-mirror, the half-reflective half-mirror can separate two beams of light, the two beams of light separated by the half-reflective half-mirror pass through the third high-reflective mirror and the fourth high-reflective mirror respectively, the third high-reflective mirror reflects a first coherent light beam passing through a first 1 / 2 wave plate and a first polarizer, the fourth high-reflective mirror reflects a second coherent light beam passing through a second 1 / 2 wave plate and a second polarizer, the third high-reflective mirror and the fourth high-reflective mirror are used to intersect the first coherent light beam and the second coherent light beam on the sample stage.

2. The maskless dual-beam interferometer system according to claim 1, characterized in that: The first 1 / 2 wave plate and the first polarizing plate constitute a first mirror group, and the first 1 / 2 wave plate and the first polarizing plate are arranged in parallel.

3. The maskless dual-beam interferometer system according to claim 2, characterized in that: The second 1 / 2 wave plate and the second polarizing plate constitute a second mirror group, and the second 1 / 2 wave plate and the second polarizing plate are arranged in parallel.

4. The maskless dual-beam interferometer system according to claim 1, characterized in that: The line between the semi-reflective and semi-mirror lens and the sample stage is the first direction.

5. The maskless dual-beam interferometer system according to claim 4, characterized in that: A line connecting the third high-reflective mirror and the fourth high-reflective mirror is a second direction, and the second direction is perpendicular to the first direction.

6. The maskless dual-beam interferometer system according to claim 3, characterized in that: The first lens group and the second lens group are respectively located on two sides of the first direction.

7. The maskless dual-beam interferometer system according to claim 5, characterized in that: The third high-reflection mirror and the fourth high-reflection mirror are respectively located on two sides of the first direction.

8. The maskless dual-beam interferometer system according to claim 7, characterized in that: The third high-reflection mirror and the fourth high-reflection mirror are symmetrically arranged along the first direction, and the incident angle of the first coherent light beam reflected by the third high-reflection mirror and the incident angle of the second coherent light beam reflected by the fourth high-reflection mirror are the same and spatially symmetrical.

9. The maskless dual-beam interferometer system according to claim 1, characterized in that: The laser is a nanosecond pulse laser, the laser wavelength of the laser is 1064nm, the maximum output energy of the laser is 1j, the output spot diameter of the laser is 6mm, the single pulse width of the laser is 7ns, and the repetition frequency of the laser is 10kHz.

10. The maskless dual-beam interferometer system according to claim 3, characterized in that: The dual-beam interference system also includes nine lens brackets, and the first high-reflective mirror, the second high-reflective mirror, the half-reflective half-transparent mirror, the third high-reflective mirror, the fourth high-reflective mirror, the first 1 / 2 wave plate, the second 1 / 2 wave plate, the first polarizer and the second polarizer are respectively installed on the nine lens brackets, and the lens bracket is provided with a fine-tuning knob, and the fine-tuning knob is used to fine-tune the height and angle of the lens.

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