Hybrid power device of IGBT and SiC MOSFET
By designing a hybrid power device for IGBT and SiC MOSFET in new energy vehicles, using the UVW three-phase bridge arm topology and intelligent switching mechanism, the problem of high cost of SiC power devices is solved, and efficient motor control is achieved under different working conditions , improving the range and motor performance of new energy vehicles.
Patent Information
- Application Number
- CN202421000226.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-09
- Publication Date
- 2024-12-27
- Estimated Expiration
- 2034-05-09
AI Technical Summary
The high cost of SiC power devices limits its popularity in the main drive systems of new energy vehicles, especially in light load conditions, the efficiency improvement is not obvious.
Design a hybrid power device for IGBT and SiC MOSFET, adopting the UVW three-phase bridge arm topology, the controller controls the conduction of SiC tubes in a light load state, controls the conduction of IGBT tubes in a heavy load state, and conducts the conduction of IGBT tubes in a heavy load state, Set preset durations separately when shutting down to improve system efficiency.
Through the intelligent switching mechanism, the system power requirements and efficiency requirements are balanced, and the best performance under different working conditions is achieved, improving the range of new energy vehicles and the efficiency of motor control.
Smart Images
Figure CN222262507U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of power electronics, and in particular to a hybrid power device of IGBT and SiC MOSFET. Background Art
[0002] In recent years, with the continuous improvement of new energy vehicle technology and the upgrade of product performance, silicon carbide (hereinafter referred to as SiC) power modules have been increasingly used in main drive systems. Compared with traditional IGBT solutions, SiC modules have brought significant efficiency improvements, especially under light load conditions. However, due to manufacturing process limitations, the cost of SiC power devices remains high, which severely limits their popularity.
[0003] In view of this, this application is filed. Utility Model Content
[0004] The utility model discloses a hybrid power device of IGBT and SiC MOSFET, aiming to improve the working efficiency of the hybrid power system under different working conditions.
[0005] The first embodiment of the utility model provides a hybrid power device of IGBT and SiC MOSFET, comprising: a power supply, a UVW three-phase bridge arm configured on the power supply, and a controller;
[0006] Wherein, the output end of the controller is electrically connected to the control end of the UVW three-phase bridge arm, and the output end of the UVW three-phase bridge arm is used to connect a load;
[0007] Each phase bridge arm includes two power tubes arranged in upper and lower positions, each power tube includes a first IGBT tube and a second IGBT tube arranged in parallel, and a SiC tube connected in parallel between the first IGBT tube and the second IGBT tube;
[0008] The controller is configured to control the SiC tube to be turned on in a light load state, and to control the SiC tube to be turned on after a preset time period in a heavy load state, and then control the first IGBT tube and the second IGBT tube to be turned on.
[0009] Preferably, the method further comprises: when shutting down from a heavy load state, controlling the first IGBT tube and the second IGBT tube to be shut down after a preset time period, and then controlling the SiC tube to be shut down.
[0010] Preferably, the upper bridge drain of the upper power tube of each phase bridge arm is electrically connected to the positive electrode of the power supply, the lower bridge source of the lower power tube of each phase bridge arm is electrically connected to the negative electrode of the power supply, and the upper bridge source of the upper power tube of each phase bridge arm is electrically connected to the lower bridge drain of the lower power tube;
[0011] The gate of the first IGBT tube, the gate of the second IGBT tube, and the gate of the SiC tube are electrically connected to the output end of the controller.
[0012] Preferably, the first IGBT tube, the second IGBT tube and the SiC tube are arranged symmetrically.
[0013] Preferably, an isolation unit is configured between the controller and the UVW three-phase bridge arm.
[0014] In a hybrid power device of IGBT and SiC MOSFET provided by the utility model, a power source is connected to a load through a UVW three-phase bridge arm, a control end of the UVW three-phase bridge arm is electrically connected to an output end of the controller, the controller controls the UVW three-phase bridge arm based on the load operation state, the controller is configured to control the SiC tube to be turned on in a light load state, and to control the SiC tube to be turned on after a preset time in a heavy load state, thereby improving the working efficiency of the hybrid power system under different working conditions. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 It is a schematic diagram of a hybrid power device of IGBT and SiC MOSFET provided by the utility model;
[0016] Figure 2 It is a pulse timing diagram of the controller provided by the utility model;
[0017] Figure 3 It is a schematic diagram of a half bridge provided by the utility model;
[0018] Figure 4 It is a schematic diagram of the isolation unit provided by the utility model. DETAILED DESCRIPTION
[0019] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work belong to the scope of protection of the utility model. Therefore, the following detailed description of the embodiments of the utility model provided in the drawings is not intended to limit the scope of the utility model for which protection is sought, but merely represents the selected embodiments of the utility model. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work belong to the scope of protection of the utility model.
[0020] The specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.
[0021] The utility model discloses a hybrid power device of an IGBT and a SiC MOSFET, aiming to improve the working efficiency of the hybrid power system under different working conditions.
[0022] See also Figure 1 , the first embodiment of the utility model provides a hybrid power device of IGBT and SiC MOSFET, comprising: a power supply 1, a UVW three-phase bridge arm configured on the power supply 1, and a controller;
[0023] Wherein, the output end of the controller is electrically connected to the control end of the UVW three-phase bridge arm, and the output end of the UVW three-phase bridge arm is used to connect a load;
[0024] Each phase bridge arm includes two power tubes arranged in upper and lower positions, each power tube includes a first IGBT tube Q1 and a second IGBT tube Q3 arranged in parallel, and a SiC tube Q2 connected in parallel between the first IGBT tube Q1 and the second IGBT tube Q3;
[0025] It should be noted that, in this embodiment, its topology structure includes UVW three-phase bridge arms. Each phase bridge arm is composed of two upper and lower power tubes, wherein each power tube is composed of a first IGBT tube Q1, a second IGBT tube Q3 and a SiC tube Q2 in parallel. Among them, the first IGBT tube Q1 and the second IGBT tube Q3 can be but are not limited to being composed of Si IGBT+FRD chips. Taking the U-phase upper bridge as an example, the first IGBT tube Q1 and the second IGBT tube Q3 share a drive signal PWM_UH_IGBT, while the SiC tube Q2 (SiC MOSFET) uses a drive signal PWM_UH_SiC independently. The design architecture makes full use of the advantages of SiC tube Q2 in light load efficiency and switching loss, and at the same time, by using Si IGBT and FRD chips in parallel, effective control and management of high current is achieved. Such a hybrid power module and its driving method not only improve the overall performance and efficiency of the system, but also make the application in the motor controller more flexible and reliable.
[0026] See also Figure 2 The control timing diagram of IGBT and SiC shown in the figure, in combination with this embodiment, the controller is configured to control the SiC tube Q2 to be turned on in a light load state, and to control the SiC tube Q2 to be turned on after a preset turn-on time in a heavy load state, and to control the first IGBT tube Q1 and the second IGBT tube Q3 to be turned on, and when shutting down from a heavy load state, to control the first IGBT tube Q1 and the second IGBT tube Q3 to be turned off after a preset turn-off time;
[0027] It should be noted that when turning on, SiC tube Q2 is turned on first. After Δt1 time, the turning-on action of SiC tube Q2 is completed, and then the first IGBT tube Q1 and the second IGBT tube Q3 perform the opening action; similarly, when turning off, the first IGBT tube Q1 and the second IGBT tube Q3 first perform the turning-off action. After Δt2 time, the turning-off action of the first IGBT tube Q1 and the second IGBT tube Q3 is completed, and then SiC tube Q2 performs the turning-off action. During the entire working process, the switching loss is borne by SiC tube Q2 alone, while the conduction loss is borne by both. The system simultaneously takes advantage of the low switching loss of SiC tube Q2 and the large current carrying advantage of IGBT, thereby achieving higher efficiency and performance in the operation of the motor controller.
[0028] Taking new energy vehicles as an example, when new energy vehicles are driving in the city under low-torque and low-throttle conditions, the module can be used like a silicon carbide module, using only the SiC tube Q2 to work, thereby improving system efficiency and increasing the vehicle's range. However, when it is necessary to step on the accelerator to accelerate or overtake, the current of the system will increase, and the first IGBT tube Q1 and the second IGBT tube Q3 will intervene. In this case, the SiC tube Q2 and the first IGBT tube Q1 and the second IGBT tube Q3 work in parallel to provide sufficient current capacity required by the system. This intelligent switching mechanism not only effectively balances the power demand and efficiency requirements of the system, but also ensures optimal performance under various driving conditions.
[0029] In a possible embodiment of the utility model, the upper bridge drain of the upper power tube of each phase bridge arm is electrically connected to the positive electrode of the power supply 1, the lower bridge source of the lower power tube of each phase bridge arm is electrically connected to the negative electrode of the power supply 1, and the upper bridge source of the upper power tube of each phase bridge arm is electrically connected to the lower bridge drain of the lower power tube;
[0030] The gate of the first IGBT tube Q1, the gate of the second IGBT tube Q3, and the gate of the SiC tube Q2 are electrically connected to the output end of the controller.
[0031] In this embodiment, a three-phase full-bridge topology is used, which is the most common topology in power electronic converters. The full bridge consists of three half bridges, each of which contains an upper arm and a lower arm. Figure 3 The AMB module in the figure is a design diagram of one of the three half-bridges, where (GH1 is the gate of the upper bridge SiC MOSFET, GH2 is the gate of the upper bridge IGBT, GL1 is the gate of the lower bridge SiC MOSFET, GL2 is the gate of the lower bridge IGBT, DH is the drain of the upper bridge, SH is the source of the upper bridge, and SL is the source of the lower bridge).
[0032] It is worth noting that the first IGBT tube Q1 and the second IGBT tube Q3 on each arm are connected in parallel with the diode (FRD) and are arranged on both sides of the SiC tube Q2.
[0033] Among them, the current paths of the first IGBT tube Q1, the second IGBT tube Q3 and the SiC tube Q2 are symmetrical, thereby reducing the parasitic inductance change of the path during the commutation process and reducing the voltage spike during commutation. Furthermore, the current shunting of the two parallel chips of the first IGBT tube Q1 and the second IGBT tube Q3 and the SiC tube Q2 is balanced to improve the current sharing performance. On the other hand, since there is a high-voltage potential difference between the positive and negative sides of the high-voltage DC between the upper arm and the lower arm, sufficient insulation withstand voltage levels are configured between the drain of the lower bridge arm and the gate of the lower arm, as well as between the drain of the upper arm and the gate of the upper arm, to avoid the safety hazard of insulation breakdown.
[0034] In a possible embodiment of the present invention, the first IGBT tube Q1, the second IGBT tube Q3 and the SiC tube Q2 are arranged symmetrically;
[0035] The following is a detailed explanation of the configuration method of "Symmetrical Layout":
[0036] When switching from a light load state to a heavy load state, SiC tube Q2 is turned on first, and the main current path passes through SiC tube Q2; then the first IGBT tube Q1 and the second IGBT tube Q3 are turned on, and part of the current is switched from SiC tube Q2 to the first IGBT tube Q1 and the second IGBT tube Q3 conduction path. In this process, the current path changes.
[0037] If the layout of the first IGBT tube Q1, the second IGBT tube Q3 and the SiC tube Q2 is asymmetrical, then when the current path changes, the length and shape of the current loop passing through different devices will change significantly, resulting in a large change in the magnetic flux in the loop.
[0038] When the first IGBT tube Q1, the second IGBT tube Q3 and the SiC tube Q2 are symmetrically distributed, no matter whether only the SiC tube Q2 is turned on alone at first, or the first IGBT tube Q1 and the second IGBT tube Q3 are turned on in parallel later, when the current is distributed back and forth between the first IGBT tube Q1, the second IGBT tube Q3 and the SiC tube Q2, due to their symmetrical positions, the shape and length of the total current loop change little.
[0039] In this way, although the current path switches between the first IGBT tube Q1 and the second IGBT tube Q3 and the SiC tube Q2, due to their symmetrical positions, the total current loop change is relatively limited, and thus the resulting magnetic flux change is relatively small.
[0040] According to the electromagnetic induction theorem, the magnitude of the induced voltage is proportional to the rate of change of the magnetic flux, that is:
[0041] U=N*dΦ / dt
[0042] Where U is the induced voltage, N is the number of loop turns, and Φ is the magnetic flux.
[0043] When the magnetic flux Φ changes slightly, the induced voltage U is also correspondingly smaller, reducing the voltage stress on the device.
[0044] Therefore, the symmetrical layout design of the first IGBT tube Q1, the second IGBT tube Q3 and the SiC chip can effectively reduce the change of magnetic flux during mode switching, reduce the induced voltage impact, and improve the reliability of the device.
[0045] See also Figure 4 In a possible embodiment of the present utility model, an isolation unit 2 is configured between the controller and the UVW three-phase bridge arm.
[0046] It should be noted that an isolation unit is usually provided between the controller and the power module. The isolation unit here can be in various forms such as photoelectric isolation, electromagnetic isolation, capacitive isolation, etc., without specific limitation, but these solutions are all within the protection scope of the present utility model. Figure 4 Taking the isolation driver as an example, the isolation unit consists of two parts:
[0047] A transmitting end, used to transmit the PWM control signal output by the controller to the other end through a transmitting circuit and an isolation coupling element;
[0048] The receiving end is used to restore the PWM control signal through the receiving circuit and the power amplifier circuit, so as to drive the first IGBT tube Q1, the second IGBT tube Q3 and the SiC tube Q2 in the power module to turn on or off.
[0049] Of course, in addition to achieving electrical isolation of the control and power circuits, the isolation unit can also provide functions such as gain amplification, timing delay, and fault detection protection.
[0050] In a hybrid power device of an IGBT and a SiC MOSFET provided by the utility model, a power source 1 is connected to a load via a UVW three-phase bridge arm, a control end of the UVW three-phase bridge arm is electrically connected to an output end of the controller, and the controller controls the UVW three-phase bridge arm based on the operating state of the load. The controller is configured to control the SiC tube Q2 to be turned on in a light-load state, and to control the SiC tube Q2 to be turned on after a preset time in a heavy-load state, and then control the first IGBT tube Q1 and the second IGBT tube Q3 to be turned on, thereby improving the working efficiency of the hybrid power system under different working conditions.
[0051] The above are only preferred implementations of the present utility model. The protection scope of the present utility model is not limited to the above embodiments. All technical solutions under the concept of the present utility model belong to the protection scope of the present utility model.
Claims
1. A hybrid power device of IGBT and SiC MOSFET, characterized in that: include: A power supply, a UVW three-phase bridge arm configured on the power supply, and a controller; Wherein, the output end of the controller is electrically connected to the control end of the UVW three-phase bridge arm, and the output end of the UVW three-phase bridge arm is used to connect a load; Each phase bridge arm includes two power tubes arranged in upper and lower positions, each power tube includes a first IGBT tube and a second IGBT tube arranged in parallel, and a SiC tube connected in parallel between the first IGBT tube and the second IGBT tube; The controller is configured to control the SiC tube to be turned on in a light load state, and to control the SiC tube to be turned on after a preset time period in a heavy load state, and then control the first IGBT tube and the second IGBT tube to be turned on.
2. A hybrid power device of IGBT and SiC MOSFET according to claim 1, characterized in that: Also includes: When shutting down from a heavy load state, the first IGBT tube and the second IGBT tube are controlled to be shut down after a preset shut-down time, and then the SiC tube is controlled to be shut down.
3. The hybrid power device of IGBT and SiC MOSFET according to claim 1, characterized in that: The upper bridge drain of the upper power tube of each phase bridge arm is electrically connected to the positive electrode of the power supply, the lower bridge source of the lower power tube of each phase bridge arm is electrically connected to the negative electrode of the power supply, and the upper bridge source of the upper power tube of each phase bridge arm is electrically connected to the lower bridge drain of the lower power tube; The gate of the first IGBT tube, the gate of the second IGBT tube, and the gate of the SiC tube are electrically connected to the output end of the controller.
4. The hybrid power device of IGBT and SiC MOSFET according to claim 1, characterized in that: The first IGBT tube, the second IGBT tube and the SiC tube are arranged symmetrically.
5. The hybrid power device of IGBT and SiC MOSFET according to claim 1, characterized in that: An isolation unit is configured between the controller and the UVW three-phase bridge arm.