SIC driving protection circuit

Abstract

An SIC drive protection circuit comprises a chip, a short circuit turn-off drive circuit and a short circuit detection circuit. The short-circuit turn-off driving circuit comprises a triode Q4 connected with a pin 10 of the chip, a base electrode of the triode Q4 is connected with the pin 10 of the chip, a resistor R8 is connected between the base electrode and an emitting electrode of the triode Q4, a resistor R7 is connected between the emitting electrode of the triode Q4 and a grid electrode G of the SICMOSFET Q2, a collector electrode of the triode Q4 is connected with-5V, and the collector electrode of the triode Q4 is connected with-5V. When a pin 14 of the N1 driving IC chip is oversaturated, a short circuit soft turn-off signal is output, and safe turn-off of the SICMOSFET Q2 is achieved through a resistor R8, a resistor R7 and a triode Q4. The circuit provided by the utility model can be widely used in a DC 24V-DC900V DC power electronic system, and achieves the switching control and short-circuit safety protection of an SICMOSFET power device.

Description

Technical Field

[0001] The utility model belongs to the technical field of power distribution, and in particular relates to a SIC drive protection circuit. Background Art

[0002] In recent years, with the development of power electronics technology, new materials and new power devices, power electronic equipment in power systems has been constantly updated. The continuous development of information technology and Internet of Things technology has promoted the rapid progress of intelligent power supply and distribution. Intelligent power distribution first switches from the original mechanical switch to an electronic solid-state switch, and cooperates with peripheral circuits to achieve safety detection and protection of over-voltage, under-current, short circuit and over-temperature. The solid-state switch has fast action response, long switch life, compact structure and convenient line control, which lays a technical foundation for the use and promotion of the product. The solid-state switch realized with SICMOSFET as the power device has shown superior performance such as lower power loss and higher switching frequency in high voltage level and high power power conversion applications, and has great potential. The safe, reliable and efficient drive circuit is the key technology of this application. Utility Model Content

[0003] In view of the above problems, the utility model provides a SIC drive protection circuit, the circuit comprising a chip, a short-circuit shutdown drive circuit and a short-circuit detection circuit;

[0004] The short-circuit shutdown driving circuit includes a transistor Q4 connected to the 10th pin of the chip, the base of the transistor Q4 is connected to the 10th pin of the chip, a resistor R8 is connected between the base and the emitter of the transistor Q4, a resistor R7 is connected between the emitter of the transistor Q4 and the gate G of the SICMOSFET Q2, and the collector of the transistor Q4 is connected to -5V. When the 14th pin of the N1 driver IC chip is oversaturated, a short-circuit soft shutdown signal is output, and the safe shutdown of the SICMOSFET Q2 is realized through the resistor R8, the resistor R7 and the transistor Q4;

[0005] The short circuit detection circuit includes a resistor R1 connected to pin 14 of the chip, one end of the resistor R1 is connected to pin 14 of the chip, the other end of the resistor R1 is connected to the anode of the diode D3, the cathode of the diode D3 is connected to the DC high voltage input terminal UHout and the drain of the SICMOSFET Q2, when the voltage at pin 14 of the chip reaches the oversaturation point, the chip immediately sends a shutdown signal, and the SICMOSFET Q2 is turned off.

[0006] Preferably, the circuit further comprises a conduction drive circuit;

[0007] The conduction drive circuit includes a driving resistor R2 connected to pin 11 of the chip, pin 11 of the chip is connected to the bases of transistors Q1 and Q3 through the driving resistor R2, the collector of the transistor Q1 is connected to +15V, the emitter of the transistor Q1 is connected to the gate of the SICMOSFET Q2 through the driving resistor R3, the anode of the diode D4 is connected to the emitter of the transistor Q1, and the cathode of the diode D4 is connected to GND2.

[0008] Preferably, the circuit further comprises a shut-down drive circuit;

[0009] The shutdown drive circuit includes a transistor Q3, the emitter of the transistor Q3 is connected to the gate of the SICMOSFET Q2 through a resistor R5, the emitter of the transistor Q3 is connected to the cathode of the diode D7, and the collector of the transistor Q3 is connected to the anode of the diode D7.

[0010] Preferably, pins 9, 12 and 16 of the chip are connected to -5V, +15V and GND2 respectively.

[0011] Preferably, a resistor R6, a capacitor C6 and a voltage stabilizing diode D6 are connected in parallel between the gate and the source S of the SICMOSFET Q2;

[0012] The source electrode S of the SICMOSFET Q2 is the circuit output terminal.

[0013] Preferably, pin 11 of the chip is connected to one end of a resistor R9, and the other end of the resistor R9 is connected to -5V and the collector of a transistor Q3;

[0014] A capacitor C9 is connected in parallel between the base and collector of the transistor Q3.

[0015] Preferably, the gate of the SICMOSFET Q2 is connected to the anode of the diode D5, and the cathode of the diode D5 is connected to a +15V power supply.

[0016] Preferably, a TVS tube D8 is connected in parallel between the drain and the gate of the SICMOSFET Q2.

[0017] Preferably, pin 14 of the chip is connected to the cathode of the diode D2, and the anode of the diode D2 is connected to GND2 and one end of the capacitor C1;

[0018] The other end of the capacitor C1 is connected to -5V and the 16th pin of the chip.

[0019] Preferably, the drain of the SICMOSFET Q2 is connected to one end of a resistor R4, the other end of the resistor R4 is connected to one end of a capacitor C5, and the other end of the capacitor C5 is connected to the source S of the SICMOSFET Q2.

[0020] The utility model has the following beneficial effects:

[0021] (1) The utility model proposes a SIC drive protection circuit based on ACPL, which can be widely used in DC24V~DC900V DC power electronic systems to realize switch control and short-circuit safety protection of SICMOSFET power devices;

[0022] (2) In the present invention, different drive resistors are matched for on and off, which not only ensures the switch response rate, but also can appropriately suppress the peak voltage peak;

[0023] (3) The drive circuit in the utility model is equipped with a totem pole push-pull structure, which has strong driving capability and reduces the switching loss of Q2;

[0024] (4) The circuit of the utility model is simple, with few peripheral circuits and flexible and ingenious control, which provides a reliable and convenient use option for engineering applications.

[0025] Other features and advantages of the utility model will be described in the following description, and partly become apparent from the description, or understood by implementing the utility model. The purpose and other advantages of the utility model can be realized and obtained by the structures indicated in the description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0027] Figure 1 A schematic diagram showing the structure of the SIC drive protection circuit in an embodiment of the utility model is shown;

[0028] Figure 2 The specific circuit diagram of the SIC driving protection circuit in the utility model is shown. DETAILED DESCRIPTION

[0029] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as being limited to the examples set forth herein; on the contrary, these embodiments are provided so that the present disclosure will be more comprehensive and complete, and the concepts of the example embodiments are fully conveyed to those skilled in the art. The described features, structures, or characteristics may be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present disclosure. However, those skilled in the art will appreciate that the technical solutions of the present disclosure may be practiced while omitting one or more of the specific details, or other methods, components, devices, steps, etc. may be adopted. In other cases, known technical solutions are not shown or described in detail to avoid obscuring various aspects of the present disclosure.

[0030] In addition, the accompanying drawings are only schematic illustrations of the present disclosure and are not necessarily drawn to scale. The same reference numerals in the figures represent the same or similar parts, and thus their repeated description will be omitted. Some of the block diagrams shown in the accompanying drawings are functional entities and do not necessarily correspond to physically or logically independent entities. These functional entities can be implemented in software form, or implemented in one or more hardware units or integrated circuits, or implemented in different networks and / or processor devices and / or microcontroller devices.

[0031] The flowcharts shown in the accompanying drawings are only exemplary and do not necessarily include all the steps. For example, some steps may be decomposed, while some steps may be combined or partially combined, so the actual execution order may change according to the actual situation.

[0032] The terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchanged where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example.

[0033] In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or sub-modules is not necessarily limited to those steps or sub-modules explicitly listed, but may include other steps or sub-modules not explicitly listed or inherent to these processes, methods, products, or apparatuses.

[0034] The utility model aims to improve a SIC drive protection circuit based on ACPL, so as to meet the requirements of safe, reliable and efficient implementation of SICMOSFET as conductor, shutdown and short-circuit protection of power devices in DC power electronic systems, and meet the requirements of energy saving and consumption reduction and reliable operation of equipment.

[0035] The utility model provides a SIC drive protection circuit, the circuit comprising a chip, a short circuit shutdown drive circuit and a short circuit detection circuit;

[0036] The short-circuit shutdown driving circuit includes a transistor Q4 connected to the 10th pin of the chip, the base of the transistor Q4 is connected to the 10th pin of the chip, a resistor R8 is connected between the base and the emitter of the transistor Q4, a resistor R7 is connected between the emitter of the transistor Q4 and the gate G of the SICMOSFET Q2, and the collector of the transistor Q4 is connected to -5V. When the 14th pin of the N1 driver IC chip is oversaturated, a short-circuit soft shutdown signal is output, and the safe shutdown of the SICMOSFET Q2 is realized through the resistor R8, the resistor R7 and the transistor Q4;

[0037] The short circuit detection circuit includes a resistor R1 connected to pin 14 of the chip, one end of the resistor R1 is connected to pin 14 of the chip, the other end of the resistor R1 is connected to the anode of the diode D3, the cathode of the diode D3 is connected to the DC high voltage input terminal UHout and the drain of the SICMOSFET Q2, when the voltage at pin 14 of the chip reaches the oversaturation point, the chip immediately sends a shutdown signal, and the SICMOSFET Q2 is turned off.

[0038] The circuit also includes a conduction drive circuit;

[0039] The conduction drive circuit includes a driving resistor R2 connected to pin 11 of the chip, pin 11 of the chip is connected to the bases of transistors Q1 and Q3 through the driving resistor R2, the collector of the transistor Q1 is connected to +15V, the emitter of the transistor Q1 is connected to the gate of the SICMOSFET Q2 through the driving resistor R3, the anode of the diode D4 is connected to the emitter of the transistor Q1, and the cathode of the diode D4 is connected to GND2.

[0040] The circuit also includes a shutdown drive circuit;

[0041] The shutdown drive circuit includes a transistor Q3, the emitter of the transistor Q3 is connected to the gate of the SICMOSFET Q2 through a resistor R5, the emitter of the transistor Q3 is connected to the cathode of the diode D7, and the collector of the transistor Q3 is connected to the anode of the diode D7.

[0042] Specifically, pins 9, 12, and 16 of the chip are connected to -5V, +15V, and GND2, respectively.

[0043] Specifically, a resistor R6, a capacitor C6 and a voltage stabilizing diode D6 are connected in parallel between the gate and the source S of the SICMOSFET Q2;

[0044] The source electrode S of the SICMOSFET Q2 is the circuit output terminal.

[0045] Specifically, the pin 11 of the chip is connected to one end of the resistor R9, and the other end of the resistor R9 is connected to -5V and the collector of the transistor Q3;

[0046] A capacitor C9 is connected in parallel between the base and collector of the transistor Q3.

[0047] Specifically, the gate of the SICMOSFET Q2 is connected to the anode of the diode D5, and the cathode of the diode D5 is connected to the +15V power supply.

[0048] Specifically, a TVS tube D8 is connected in parallel between the drain and the gate of the SICMOSFET Q2.

[0049] Specifically, pin 14 of the chip is connected to the cathode of the diode D2, and the anode of the diode D2 is connected to GND2 and one end of the capacitor C1;

[0050] The other end of the capacitor C1 is connected to -5V and the 16th pin of the chip.

[0051] Specifically, the drain of the SICMOSFET Q2 is connected to one end of the resistor R4, the other end of the resistor R4 is connected to one end of the capacitor C5, and the other end of the capacitor C5 is connected to the source S of the SICMOSFET Q2.

[0052] like Figure 1 As shown, the new type is mainly composed of a driver IC chip, an isolated driver power supply, a conduction driver circuit, a shutdown driver circuit, a short-circuit shutdown driver circuit, a short-circuit detection circuit, a safety protection circuit, and a SICMOSFET.

[0053] The principle of on-drive is as follows: Pin 11 of chip N1 drives the SICMOSFET Q2 switch through resistor R2, transistor Q1, and resistor R3, and diodes D2 and D4 clamp the high-level voltage of the drive signal to +15V;

[0054] The principle of the shutdown drive is as follows: Pin 11 of chip N1 drives SICMOSFET Q2 to turn off through resistor R2, transistor Q3, and resistor R5, and diode D7 clamps the shutdown drive signal level to -5V;

[0055] The principle of short-circuit detection is as follows: the 14-pin of chip N1 collects the sum of the voltage divided by resistor R1 and diode D3, that is, the conductor resistance voltage drop (tube voltage drop) between the drain and source of SICMOSFET Q2. When the voltage at the 14-pin of N1 reaches the oversaturation point, chip N1 immediately sends a shutdown signal, and SICMOSFET Q2 is turned off.

[0056] The principle of short-circuit shutdown is as follows: when the 10th pin of chip N1 is oversaturated at the 14th pin of N1, a short-circuit soft shutdown signal is output, and the safe shutdown of SICMOSFET Q2 is realized through resistor R8, resistor R7 and transistor Q4.

[0057] The realization principle of the absorption circuit is as follows: the resistor R4 and the capacitor C5 form the RC absorption circuit of the SICMOSFET Q2.

[0058] Specific circuit connection Figure 2 As shown:

[0059] Chip N1 is a driver IC chip. The chip has an isolated low-voltage control side at pins 1 to 8 and an isolated high-voltage side at pins 9 to 16 on the right. The drive circuit, protection circuit, and detection circuit are all high-voltage side circuits.

[0060] The 9th, 12th and 16th pins of chip N1 are respectively -5V, +15V power supplies and GND2, and GND2 is connected to the S pole of SICMOSFET. Pin 19 is short-circuit soft shutdown output, 11 is drive signal output, and 14 is oversaturation short-circuit detection port. Pin 10 of chip N1 is connected to the base of PNP transistor Q4, resistor R8 is connected to the base and emitter of transistor Q4, and the emitter of transistor Q4 is connected to the gate G of SICMOSFET Q2; resistor R6, capacitor C6, and voltage regulator diode D6 (anti-parallel) are connected in parallel between the gate and source S of SICMOSFET Q2; the source of SICMOSFET Q2 is the output end of the circuit.

[0061] Pin 11 V0 of chip N1 is connected to the base of NPN transistor Q1 and PNP transistor Q3 through driving resistor R2; the collector of transistor Q1 is connected to +15V, and the emitter of transistor Q1 is connected to the gate of SICMOSFET Q2 through resistor driving resistor R3; the anode of diode D4 is connected to the emitter of transistor Q1, and the cathode of diode D4 is connected to GND2; the emitter of transistor Q3 is connected in series with resistor R5 and the gate of SICMOSFET Q2; the cathode of diode D7 is connected to the emitter of transistor Q3, and the anode of diode D7 is connected to the collector of transistor Q3; one end of resistor R9 is connected to pin 11 of chip N1, and the other end is connected to -5V, that is, the collector of transistor Q3, and capacitor C9 is connected in parallel between the base and collector of transistor Q3; the anode of diode D5 is connected to the gate of SICMOSFET Q2, and the cathode of diode D5 is connected to +15V.

[0062] The 14th pin of chip N1 is connected in series with resistor R1 and forward series with diode D3, and then connected to the DC high voltage input terminal UHout, that is, the drain of SICMOSFET Q2; TVS tube D8 is connected in parallel between the drain and gate of SICMOSFET Q2; the anode of diode D2 is connected to GND2, and the cathode is connected to the 14th pin of chip N1; capacitors C1~C4, C6~C10 are filtering and coupling capacitors of each connection port.

[0063] The resistor R4 and the capacitor C5 are connected in series, and the series body is connected in parallel between the drain and the source of the SICMOSFET Q2.

[0064] Those skilled in the art should understand that although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible to modify the technical solutions described in the aforementioned embodiments, or to make equivalent replacements for some of the technical features therein; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A SIC drive protection circuit, characterized in that: The circuit comprises a chip, a short-circuit shutdown drive circuit and a short-circuit detection circuit; The short-circuit shutdown driving circuit includes a transistor Q4 connected to pin 10 of the chip, the base of the transistor Q4 is connected to pin 10 of the chip, a resistor R8 is connected between the base and the emitter of the transistor Q4, a resistor R7 is connected between the emitter of the transistor Q4 and the gate G of the SICMOSFET Q2, and the collector of the transistor Q4 is connected to -5V. When the pin 14 of the N1 driver IC chip is oversaturated, a short-circuit soft shutdown signal is output, and the safe shutdown of the SICMOSFET Q2 is achieved through the resistor R8, the resistor R7 and the transistor Q4; The short circuit detection circuit includes a resistor R1 connected to pin 14 of the chip, one end of the resistor R1 is connected to pin 14 of the chip, the other end of the resistor R1 is connected to the anode of the diode D3, the cathode of the diode D3 is connected to the DC high voltage input terminal UHout and the drain of the SICMOSFET Q2, when the voltage at pin 14 of the chip reaches the oversaturation point, the chip immediately sends a shutdown signal, and the SICMOSFET Q2 is turned off.

2. The SIC driving protection circuit according to claim 1, characterized in that: The circuit also includes a conduction drive circuit; The conduction drive circuit includes a driving resistor R2 connected to pin 11 of the chip, pin 11 of the chip is connected to the bases of transistors Q1 and Q3 through the driving resistor R2, the collector of the transistor Q1 is connected to +15V, the emitter of the transistor Q1 is connected to the gate of the SICMOSFET Q2 through the driving resistor R3, the anode of the diode D4 is connected to the emitter of the transistor Q1, and the cathode of the diode D4 is connected to GND2.

3. The SIC driving protection circuit according to claim 1, characterized in that: The circuit also includes a shutdown drive circuit; The shutdown drive circuit includes a transistor Q3, the emitter of the transistor Q3 is connected to the gate of the SICMOSFET Q2 through a resistor R5, the emitter of the transistor Q3 is connected to the cathode of the diode D7, and the collector of the transistor Q3 is connected to the anode of the diode D7.

4. The SIC driving protection circuit according to claim 1, characterized in that: Pins 9, 12 and 16 of the chip are connected to -5V, +15V and GND2 respectively.

5. The SIC driving protection circuit according to claim 1, characterized in that: A resistor R6, a capacitor C6 and a voltage stabilizing diode D6 are connected in parallel between the gate and the source S of the SICMOSFET Q2; The source electrode S of the SICMOSFET Q2 is the circuit output terminal.

6. The SIC driving protection circuit according to claim 1, characterized in that: Pin 11 of the chip is connected to one end of a resistor R9, and the other end of the resistor R9 is connected to -5V and the collector of a transistor Q3; A capacitor C9 is connected in parallel between the base and collector of the transistor Q3.

7. The SIC driving protection circuit according to claim 1, characterized in that: The gate of the SICMOSFET Q2 is connected to the anode of the diode D5, and the cathode of the diode D5 is connected to a +15V power supply.

8. The SIC driving protection circuit according to claim 1, characterized in that: A TVS tube D8 is connected in parallel between the drain and the gate of the SICMOSFET Q2.

9. The SIC driving protection circuit according to claim 1, characterized in that: Pin 14 of the chip is connected to the cathode of the diode D2, and the anode of the diode D2 is connected to GND2 and one end of the capacitor C1; The other end of the capacitor C1 is connected to -5V and the 16th pin of the chip.

10. The SIC driving protection circuit according to claim 1, characterized in that: The drain of the SICMOSFET Q2 is connected to one end of the resistor R4 , the other end of the resistor R4 is connected to one end of the capacitor C5 , and the other end of the capacitor C5 is connected to the source S of the SICMOSFET Q2 .

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