Polycrystalline silicon production system
By using a combination of plasma heating device and displacement device in the polysilicon production system, the problems of low preheating efficiency and poor reliability in the prior art are solved, efficient and accurate silicon core heating is achieved, and the purity of polysilicon products is improved and quality.
Patent Information
- Application Number
- CN202422720350.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-08
- Publication Date
- 2025-01-03
- Estimated Expiration
- 2034-11-08
AI Technical Summary
In the existing polysilicon production technology, the preheating process is low efficiency and poor reliability, making it difficult to accurately control the silicon core temperature, which can easily lead to overheating or insufficient silicon core, affecting product quality, and the risk of switching high and low voltages is high, making it easy to introduce pollution sources.
The plasma heating device is used to preheat the plasma output into the furnace body through the preheating hole. Combined with the displacement device, the plasma heating device can be movable to heat it in multiple preheating positions, and the plasma torch and circulating cooling system can be used to achieve efficient and accurate Temperature control avoids high and low voltage switching and the introduction of pollution sources.
It improves the preheating efficiency and reliability of the polysilicon production system, shortens the start-up cycle, enhances the control accuracy of the silicon core temperature, improves product purity and quality, and reduces the risk of voltage switching and pollution.
Smart Images
Figure CN222293624U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a polysilicon production system. Background Art
[0002] Electronic-grade polysilicon is one of the most basic and important raw materials for manufacturing semiconductor silicon wafers. It is called the "food" of the electronic information industry, and its purity must reach 11N. In chemical vapor deposition reduction production, the purity of the silicon core is high, which brings with it a high resistance value, making it difficult to break down at a lower voltage at room temperature.
[0003] The polysilicon production equipment in the related art is heated by applying a 12V high-voltage power supply to the electrodes at both ends of the silicon core to briefly change the resistivity of the silicon and break down the silicon core, and then switching to a low-voltage power supply to maintain the temperature. Not only is the startup cycle long, but the voltage switching risk is also high. Alternatively, an auxiliary heat source is used, using an infrared halogen lamp or a graphite heating rod for preheating, reducing the resistivity of the high-purity silicon core at room temperature to a low resistivity of about 500°C before breaking down. On the one hand, the heating time is long and the efficiency is low. On the other hand, since a heat source needs to be introduced into the furnace body, a new source of pollution is easily introduced, affecting the purity of the product.
[0004] In addition, these methods make it difficult to accurately control the temperature of the silicon core during the preheating process, which can easily lead to overheating or underheating of the silicon core, affecting the quality of the final polysilicon product. Utility Model Content
[0005] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, the utility model proposes a polysilicon production system, which has the advantages of high preheating efficiency, strong reliability, and convenience in improving the purity and quality of polysilicon products.
[0006] To achieve the above-mentioned purpose, according to an embodiment of the utility model, a polysilicon production system is proposed, and the polysilicon production system includes: a reduction reaction device, the reduction reaction device has a furnace body, and the furnace body is provided with a preheating hole; a plasma heating device, the plasma heating device is suitable for outputting plasma into the furnace body through the preheating hole to preheat the silicon core in the furnace body.
[0007] The polysilicon production system according to the embodiment of the utility model has the advantages of high preheating efficiency, strong reliability, and convenience in improving the purity and quality of polysilicon products.
[0008] In addition, the polysilicon production system according to the above embodiment of the utility model may also have the following additional technical features:
[0009] According to one embodiment of the utility model, the polysilicon production system also includes a displacement device, the plasma heating device is arranged on the displacement device, the displacement device is suitable for driving the plasma heating device to move, there are multiple reduction reaction devices, the plasma heating device is movable between multiple preheating positions, and the plasma heating device is respectively located at multiple preheating holes at the multiple preheating positions.
[0010] According to an embodiment of the present invention, the plasma heating device is a plasma torch, and the plasma heating device outputs plasma toward the preheating hole when in the preheating position.
[0011] According to one embodiment of the utility model, the plasma heating device includes an electrode, a nozzle, a power supply device and a gas supply device, the nozzle is arranged outside the electrode, a gas path is formed between the electrode and the nozzle, the power supply device is electrically connected to the electrode and the nozzle respectively, and the gas supply device is connected to a gas source and the gas path respectively to introduce working gas into the gas path.
[0012] According to an embodiment of the utility model, the plasma heating device further comprises a circulation device, a cooling water chamber is provided in the nozzle, and the circulation device is connected to the cooling water chamber so that cooling water circulates between the circulation device and the cooling water chamber.
[0013] According to an embodiment of the utility model, the cooling water chamber is provided with a water inlet at the upper end and a water outlet at the lower end, and the circulation device is communicated with the water inlet and the water outlet respectively.
[0014] According to an embodiment of the present invention, the plasma heating device further comprises a control system, and the control system is electrically connected to the electrode.
[0015] According to an embodiment of the present invention, the working gas is nitrogen.
[0016] According to an embodiment of the present invention, the preheating hole is formed on the top of the furnace body.
[0017] According to an embodiment of the utility model, the travel of the displacement device in the vertical direction is 4-6 meters and the travel in the horizontal direction is 2-4 meters.
[0018] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:
[0020] Figure 1 is a structural schematic diagram of a polysilicon production system according to an embodiment of the utility model;
[0021] Figure 2 It is a schematic structural diagram of a plasma heating device and a displacement device of a polysilicon production system according to an embodiment of the utility model;
[0022] Figure 3 It is a schematic structural diagram of a reduction reaction device of a polysilicon production system according to an embodiment of the utility model.
[0023] Figure numerals: polysilicon production system 1, reduction reaction device 10, furnace body 11, preheating hole 12, plasma heating device 20, electrode 21, nozzle 22, cooling water chamber 221, water inlet 222, water outlet 223, circulation device 23, gas supply device 24, gas circuit 25, power supply device 26, control system 27, plasma 28, displacement device 30. DETAILED DESCRIPTION
[0024] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.
[0025] In the description of the present utility model, it is necessary to understand that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, features defined as "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present utility model, unless otherwise specified, "multiple" means two or more.
[0026] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0027] A polysilicon production system 1 according to an embodiment of the present invention will be described below with reference to the accompanying drawings.
[0028] like Figure 1-Figure 3 As shown, the polysilicon production system 1 according to the embodiment of the present invention includes a reduction reaction device 10 and a plasma heating device 20 .
[0029] The reduction reaction device 10 has a furnace body 11, and a preheating hole 12 is provided on the furnace body 11. The plasma heating device 20 is suitable for outputting plasma 28 into the furnace body 11 through the preheating hole 12 to preheat the silicon core in the furnace body 11.
[0030] Specifically, during the start-up process of the reduction furnace, the plasma heating device 20 is used to output plasma 28 into the furnace body 11 through the preheating hole 12 to preheat the silicon core in the furnace body 11. After reaching the preheating temperature, the preheating hole 12 is closed, and the silicon core is broken down by applying voltage to start reduction production.
[0031] According to the polysilicon production system 1 of the embodiment of the utility model, a preheating hole 12 is set on the furnace body 11, and a plasma heating device 20 is set. The plasma heating device 20 outputs plasma 28 to heat the silicon core in the furnace body 11. Compared with the high-voltage breakdown method in the related art, the plasma heating device 20 can be used to heat the silicon core to reduce the resistivity before breakdown. Therefore, a lower voltage can be used for breakdown, and the process of high and low voltage switching can be omitted. On the one hand, the startup cycle can be shortened, and on the other hand, the risks caused by voltage switching can be avoided, thereby improving the reliability of the polysilicon production system 1. Compared with the preheating method using infrared halogen lamps or graphite heating rods in the related art, on the one hand, plasma heating has higher heating efficiency, can shorten the preheating cycle, and improve preheating efficiency. On the other hand, plasma heating can avoid the introduction of pollution sources into the furnace body 11, thereby avoiding affecting the purity of silicon products.
[0032] In addition, by adopting the plasma heating method, compared with the preheating method in the related art, the plasma heating device 20 can more easily and accurately control the temperature of the silicon core, thereby avoiding overheating or insufficient heating of the silicon core, and facilitating the quality of polysilicon products.
[0033] Therefore, the polysilicon production system 1 according to the embodiment of the utility model has the advantages of high preheating efficiency, high reliability, and convenience in improving the purity and quality of polysilicon products.
[0034] A polysilicon production system 1 according to a specific embodiment of the present invention will be described below with reference to the accompanying drawings.
[0035] In some specific embodiments of the present invention, Figure 1-Figure 3 As shown, the polysilicon production system 1 according to the embodiment of the present invention includes a reduction reaction device 10 and a plasma heating device 20 .
[0036] Advantageously, if Figure 1 and Figure 2 As shown, the polysilicon production system 1 further includes a displacement device 30, on which the plasma heating device 20 is disposed, and the displacement device 30 is adapted to drive the plasma heating device 20 to move, and there are multiple reduction reaction devices 10, and the plasma heating device 20 is movable between multiple preheating positions, and the plasma heating device 20 is respectively located at multiple preheating holes 12 at the multiple preheating positions. In other words, the plasma heating device 20 is located at a different preheating hole 12 at each of the preheating positions. In this way, the displacement device 30 can move the plasma heating device 20, and multiple reduction reaction devices 10 can be preheated using one plasma heating device 20.
[0037] Specifically, Figure 1 and Figure 2 As shown, the plasma heating device 20 is a plasma torch, and when in the preheating position, the plasma heating device 20 outputs plasma 28 toward the preheating hole 12. This makes it easier to heat the silicon core in the furnace body 11.
[0038] More specifically, Figure 1 and Figure 2 As shown, the plasma heating device 20 includes an electrode 21, a nozzle 22, a power supply device 26 and a gas supply device 24. The nozzle 22 is arranged outside the electrode 21, and a gas path 25 is formed between the electrode 21 and the nozzle 22. The power supply device 26 is electrically connected to the electrode 21 and the nozzle 22, respectively. The gas supply device 24 is connected to the gas source and the gas path 25 to pass the working gas into the gas path 25. In this way, it is convenient to form a plasma torch and heat the silicon core with plasma 28.
[0039] More advantageously, if Figure 2As shown, the plasma heating device 20 further includes a circulation device 23, a cooling water chamber 221 is provided in the nozzle 22, and the circulation device 23 is connected to the cooling water chamber 221 so that the cooling water circulates between the circulation device 23 and the cooling water chamber 221. In this way, the cooling water can be used to cool the nozzle 22 to prevent the nozzle 22 from being damaged due to excessive temperature.
[0040] Alternatively, if Figure 2 As shown, the cooling water chamber 221 is provided with a water inlet 222 at the upper end and a water outlet 223 at the lower end (the up and down directions are shown by arrows in the figure), and the circulation device 23 is respectively connected to the water inlet 222 and the water outlet 223. In this way, the cooling water can flow from top to bottom, which is convenient for cooling the nozzle 22.
[0041] Furthermore, if Figure 2 As shown, the plasma heating device 20 further includes a control system 27, and the control system 27 is electrically connected to the electrode 21. This makes it easier to control the temperature of the plasma heating device 20, thereby making it easier to control the temperature of the silicon core.
[0042] Furthermore, the working gas is nitrogen, which not only facilitates the generation of the plasma 28 , but also reduces the cost of the working gas, and reduces the operating cost of the plasma heating device 20 and the polysilicon production system 1 .
[0043] Figure 1 and Figure 3 A polysilicon production system 1 according to some examples of the present invention is shown. Figure 1 and Figure 3 As shown, the preheating hole 12 is formed at the top of the furnace body 11. Specifically, the plasma heating device 20 is located directly above the preheating hole 12 when in the preheating position. This makes it easier for the plasma heating device 20 to output plasma 28 into the furnace body 11 through the preheating hole 12.
[0044] Optionally, the displacement device 30 has a vertical stroke of 4-6 meters and a horizontal stroke of 2-4 meters (the horizontal direction is perpendicular to the vertical direction). Preferably, the displacement device 30 has a vertical stroke of 5 meters and a horizontal stroke of 3 meters. In this way, the moving range of the plasma heating device 20 can be increased while ensuring the stable operation of the displacement device 30, so as to facilitate preheating of multiple furnace bodies 11.
[0045] Specifically, the displacement device 30 may include a mobile platform, a folding structure and a driving device, and the plasma heating device 20 is arranged on the mobile platform. The folding structure is respectively connected to the mobile platform and the driving device, and the driving device drives the folding structure to fold or unfold to achieve the displacement of the mobile platform.
[0046] Other structures and operations of the polysilicon production system 1 according to the embodiment of the present invention are known to those skilled in the art and will not be described in detail here.
[0047] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.
[0048] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.
Claims
1. A polysilicon production system, characterized in that: include: A reduction reaction device, the reduction reaction device having a furnace body, the furnace body being provided with a preheating hole; A plasma heating device, the plasma heating device being adapted to output plasma into the furnace body through the preheating hole to preheat the silicon core in the furnace body; A displacement device, wherein the plasma heating device is arranged on the displacement device, and the displacement device is suitable for driving the plasma heating device to move. There are multiple reduction reaction devices, and the plasma heating device is movable between multiple preheating positions. The plasma heating device is respectively located at multiple preheating holes at the multiple preheating positions.
2. The polysilicon production system according to claim 1, characterized in that: The plasma heating device is a plasma torch, and the plasma heating device outputs plasma toward the preheating hole when in the preheating position.
3. The polysilicon production system according to claim 2, characterized in that: The plasma heating device includes an electrode, a nozzle, a power supply device and a gas supply device. The nozzle is arranged outside the electrode, and a gas path is formed between the electrode and the nozzle. The power supply device is electrically connected to the electrode and the nozzle respectively, and the gas supply device is connected to a gas source and the gas path respectively to introduce working gas into the gas path.
4. The polysilicon production system according to claim 3, characterized in that: The plasma heating device further comprises a circulation device, a cooling water chamber is arranged in the nozzle, and the circulation device is communicated with the cooling water chamber so that cooling water circulates between the circulation device and the cooling water chamber.
5. The polysilicon production system according to claim 4, characterized in that: The cooling water chamber has a water inlet at its upper end and a water outlet at its lower end, and the circulation device is communicated with the water inlet and the water outlet respectively.
6. The polysilicon production system according to claim 3, characterized in that: The plasma heating device further comprises a control system, wherein the control system is electrically connected to the electrode.
7. The polysilicon production system according to claim 3, characterized in that: The working gas is nitrogen.
8. The polysilicon production system according to claim 1, characterized in that: The preheating hole is formed at the top of the furnace body.
9. The polysilicon production system according to claim 1, characterized in that: The displacement device has a travel of 4-6 meters in the vertical direction and a travel of 2-4 meters in the horizontal direction.