Crystal growing furnace

Abstract

The utility model discloses a crystal growing furnace which comprises a main furnace chamber, an auxiliary furnace chamber and a lifting assembly, an auxiliary furnace stone is connected with the main furnace chamber and arranged above the main furnace chamber, and the lifting assembly is arranged above the auxiliary furnace chamber and used for lifting a crystal bar; the lifting assembly comprises a lifting shaft, a lifting support and a lifting mechanism, the lifting shaft is connected with the lifting support through the lifting mechanism, the lifting mechanism is connected with the lifting support in a sliding mode, and the lifting mechanism has the moving freedom degree relative to the lifting support in the vertical direction; the crystal growing furnace further comprises a potential detection assembly electrically connected with the lifting mechanism, and the potential detection assembly is used for detecting the potential of the lifting mechanism and determining whether the crystal bar is separated from the silicon melt or not according to the potential of the lifting mechanism. Through the arrangement, the power can be reduced when the crystal bar is separated from the silicon melt, the energy consumption is reduced, and the production efficiency is improved.

Description

Technical Field

[0001] The present application relates to the technical field of crystal growth, and in particular to a crystal growth furnace. Background Art

[0002] The crystal growth furnace is a manufacturing device for producing single crystal silicon by the Czochralski method. It is mainly composed of three parts: the host, the heating power supply and the computer control system.

[0003] The main machine is mainly composed of a frame, a furnace body, a water-cooled valve seat, a crystal lifting and rotating mechanism, a crucible lifting and rotating mechanism, an argon system, a vacuum system, an automatic furnace pressure detection control, a water cooling system, and a variety of safety devices. Since the furnace body is in a vacuum environment during the growth of the crystal rod, the operator can only observe the crystal rod through the observation port on the furnace body. It is impossible to know the growth status and position of the crystal rod in time through manual observation alone, and manual observation is prone to misjudgment of whether the crystal rod is separated from the silicon melt.

[0004] In addition, if the crystal rod is separated from the silicon melt, the power of the equipment can be reduced and subsequent automated steps can be performed. Once errors occur in human observation, it is easy to cause the processing time of the equipment to be too long, resulting in energy waste of the equipment and reducing subsequent processing efficiency. Summary of the invention

[0005] In order to solve the deficiencies of the prior art, the purpose of the present application is to provide a crystal growth furnace, which solves the problem that it is difficult to observe the growth state of the crystal rod.

[0006] To achieve the above objectives, this application adopts the following technical solutions:

[0007] A crystal growth furnace comprises a main furnace chamber, an auxiliary furnace chamber and a pulling assembly, wherein the auxiliary furnace chamber is connected to the main furnace chamber and is arranged above the main furnace chamber, and the pulling assembly is arranged above the auxiliary furnace chamber and is used to pull a crystal rod; the pulling assembly comprises: a pulling shaft, a pulling support and a lifting mechanism, the pulling shaft is connected to the pulling support through the lifting mechanism, the lifting mechanism is slidably connected to the pulling support, and the lifting mechanism has the freedom of movement relative to the pulling support in the vertical direction; the crystal growth furnace also comprises a potential detection assembly electrically connected to the lifting mechanism, the potential detection assembly is used to detect the potential of the lifting mechanism, and determine whether the crystal rod is separated from the silicon melt according to the potential of the lifting mechanism.

[0008] Furthermore, the lifting mechanism includes a lifting bracket, an insulating ring and a first bushing structure. The lifting bracket is slidably connected to the pulling bracket, at least part of the insulating ring is inserted into the lifting bracket, at least part of the first bushing structure is inserted into the insulating ring, and the first bushing structure is connected to the pulling shaft.

[0009] Further, the potential detection component is connected to the first bushing structure or the lifting shaft.

[0010] Furthermore, the first bushing structure and the insulating ring are connected to the lifting bracket through fasteners. The first bushing structure is provided with a through hole for the fasteners to pass through. The fasteners are sequentially passed through the first bushing structure, the insulating ring and the lifting bracket.

[0011] Furthermore, an insulating layer is provided in the through hole of the first bushing structure, and the insulating layer includes at least one of an insulating coating and an insulating spacer.

[0012] Furthermore, the lifting assembly also includes a first sensor, which is arranged at the top end of the lifting bracket, and the lifting height of the lifting mechanism is detected by the first sensor.

[0013] Furthermore, the lifting bracket has a screw rod extending in the vertical direction, the lifting mechanism is connected to the lifting bracket through the screw rod, and the lifting mechanism is driven to move in the vertical direction by rotating the screw rod, and the first sensor is arranged at the top end of the screw rod.

[0014] Furthermore, the lifting assembly also includes a second sensor for detecting the weight of the crystal rod, and the second sensor is at least partially arranged between the lifting mechanism and the lead screw.

[0015] Further, the second sensor is arranged below the lifting mechanism, and the second sensor is a weighing sensor; or the second sensor is arranged above the lifting mechanism, and the second sensor is a tension sensor.

[0016] Furthermore, the lifting bracket is provided with a second bushing structure sleeved on the lifting shaft, the second bushing structure is fixedly connected to the lifting bracket, and a magnetic fluid for insulation is filled between the second bushing structure and the lifting bracket.

[0017] The crystal growth furnace set up as above determines whether the crystal rod and the silicon melt are separated by detecting the potential of the lifting mechanism. Compared with the manual observation method in the prior art, the detection effect is better, and the equipment can respond in time when the crystal rod and the silicon melt are separated, reduce power, or execute subsequent automation steps, thereby improving production efficiency and reducing production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the structure of a crystal growth furnace in an embodiment of the present application.

[0019] Figure 2 It is a schematic diagram of the structure of the pulling component in the embodiment of the present application.

[0020] Figure 3 In the implementation mode of this application Figure 2 Enlarged view of point A.

[0021] Figure 4It is a cross-sectional view of the lifting assembly in the embodiment of the present application.

[0022] Figure 5 In the implementation mode of this application Figure 3 Enlarged view of point B.

[0023] Figure 6 It is a structural schematic diagram of the auxiliary furnace chamber from a first perspective in an embodiment of the present application.

[0024] Figure 7 It is a structural schematic diagram of the auxiliary furnace chamber from a second perspective in an embodiment of the present application.

[0025] Figure 8 It is a schematic diagram of the structure of the furnace cover and the furnace cover driving assembly in the embodiment of the present application.

[0026] Fig. 9 It is a schematic diagram of the structure of the furnace cover drive assembly in the embodiment of the present application.

[0027] Fig.10 It is a cross-sectional view of the furnace cover drive assembly in the embodiment of the present application.

[0028] Fig.11 It is a top view of the furnace cover in the embodiment of the present application.

[0029] Fig.12 It is a cross-sectional view of the furnace cover in the embodiment of the present application.

[0030] Fig.13 In the implementation mode of this application Fig.12 Enlarged view of point C.

[0031] Fig.14 It is a schematic diagram of the structure of the CCD bracket in the implementation mode of the present application.

[0032] Fig.15 It is a structural schematic diagram of the first viewing angle of the rotating bracket in an embodiment of the present application.

[0033] Fig.16 It is a schematic diagram of the structure of the first movable bracket in the implementation manner of the present application.

[0034] Fig.17 It is a structural schematic diagram of the second viewing angle of the CCD bracket in the embodiment of the present application. DETAILED DESCRIPTION

[0035] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the specific implementation manner of the present application will be clearly and completely described below in conjunction with the drawings in the implementation manner of the present application.

[0036] like Figure 1As shown, the present application provides a crystal growth furnace 100, which is used to produce crystal rods. The crystal growth furnace 100 includes a frame 10, a pulling assembly 20, an auxiliary furnace chamber 30, a main furnace chamber 40 and a rotary valve assembly 50. In order to clearly illustrate the technical solution of the present application, the following is also provided: Figure 1 The up-down, left-right, and front-back directions shown are the up-down, left-right, and front-back directions of the crystal growth furnace 100. It should be noted that the vertical direction referred to below is the up-down direction of the crystal growth furnace 100.

[0037] Specifically, the frame 10 serves as a basic frame of the crystal growth furnace 100 and is used to support the pulling assembly 20 , the auxiliary furnace chamber 30 , the main furnace chamber 40 , and the rotary valve assembly 50 .

[0038] The pulling assembly 20 is at least partially disposed on the frame 10. The pulling assembly 20 can be lifted and rotated so that the pulling assembly 20 can be inserted into the auxiliary furnace chamber 30 and the main furnace chamber 40 as required. The pulling assembly 20 is used to pull the crystal rod.

[0039] When the crystal growth furnace 100 starts to work, the pulling assembly 20 first passes through the auxiliary furnace chamber 30 and then enters the main furnace chamber 40, so as to realize the pulling growth of the crystal rod.

[0040] The auxiliary furnace chamber 30 is located at the lower side of the pulling assembly 20 , and the main furnace chamber 40 is located at the lower side of the auxiliary furnace chamber 30 . The auxiliary furnace chamber 30 is used to place the grown crystal rods, and the main furnace chamber 40 is used to grow the crystal rods.

[0041] The rotary valve assembly 50 is located between the main furnace chamber 40 and the auxiliary furnace chamber 30, and is used to connect the main furnace chamber 40 and the auxiliary furnace chamber 30, so that the rotary valve assembly 50 can close or connect the passage between the main furnace chamber 40 and the auxiliary furnace chamber 30. During the growth of the crystal ingot, the rotary valve assembly 50 can connect the passage between the main furnace chamber 40 and the auxiliary furnace chamber 30, so that the pulling assembly 20 can extend from the auxiliary furnace chamber 30 into the main furnace chamber 40, or after the growth of the crystal ingot is completed, when the pulling assembly 20 pulls the crystal ingot into the auxiliary furnace chamber 30, the rotary valve assembly 50 can close the passage between the main furnace chamber 40 and the auxiliary furnace chamber 30, so as to facilitate the removal of the crystal ingot.

[0042] Furthermore, the crystal growth furnace 100 also includes a rotating lifting assembly 60 and a crucible (not shown). The rotating lifting assembly 60 is at least partially disposed in the main furnace chamber 40, and one end of the rotating lifting assembly 60 is connected to the crucible. The rotating lifting assembly 60 is located at the lower side of the crucible and supports the crucible. The rotating lifting assembly 60 is used to drive the rotation and lifting of the crucible.

[0043] The crucible is located in the main furnace chamber 40, and the crucible is filled with melt. During the growth of the crystal rod, the pulling assembly 20 extends the seed crystal into the crucible so that the seed crystal contacts the melt in the crucible. At this time, the pulling assembly 20 rotates the seed crystal and reverses the crucible by rotating the lifting assembly 60. At the same time, the pulling assembly 20 pulls the seed crystal upward, and then goes through the processes of seeding, enlargement, shoulder rotation, equal diameter growth, etc. to obtain the desired crystal rod. Among them, the seed crystal is a small crystal with the same crystal orientation as the desired crystal rod, which is the seed for growing a single crystal.

[0044] It should be noted that when the crystal rod is a single crystal silicon rod, the melt in the crucible is a silicon melt.

[0045] like Figure 2 As shown, as an implementation, the lifting assembly 20 includes a lifting bracket 21, a lifting shaft 22 and a lifting mechanism 23. The lifting bracket 21 is the main body of the lifting assembly 20, and is used to directly or indirectly support the lifting mechanism 23 and the lifting shaft 22.

[0046] The lifting bracket 21 extends in the vertical direction of the crystal growth furnace 100, and has a slide rail 211 extending in the vertical direction, and the lifting mechanism 23 is slidably connected to the lifting bracket 21 through the slide rail 211. The lifting shaft 22 is at least partially penetrated through the lifting mechanism 23, and the lifting shaft 22 is relatively fixed with the lifting mechanism 23 in the vertical direction. Among them, one end of the lifting shaft 22 is connected to the lifting mechanism 23, and the other end of the lifting shaft 22 is used to fix the seed crystal. During the growth of the crystal rod, when the pulling assembly 20 pulls the crystal rod upward, the lifting shaft 22 is driven by the lifting mechanism 23 to slide upward along the extension direction of the slide rail 211, thereby driving the crystal rod to move to the side away from the silicon melt.

[0047] In addition, the pulling shaft 22 can also rotate along its own circumferential direction relative to the lifting mechanism 23 to achieve the rotation and lifting of the crystal rod.

[0048] Specifically, the crystal growth furnace 100 also includes a potential detection component (not shown), which is electrically connected to the lifting mechanism 23. During the growth of the crystal rod, a voltage of a preset value is applied to the lifting mechanism 23. At this time, since the lifting mechanism 23 and the silicon melt in the crucible form a current path, the potential of the lifting mechanism 23 is pulled down. It can be understood that when the potential detection component detects that the potential is reduced, it indicates that the crystal rod is in the growth process and the crystal rod is not separated from the silicon melt. When the potential of the lifting mechanism 23 rises to a preset value, it indicates that the crystal rod is separated from the silicon melt.

[0049] Exemplarily, a voltage of 10 V is applied to the lifting mechanism 23. When the crystal rod is in the growth process, the potential of the lifting mechanism 23 is pulled down to 1 V because the crystal rod is in contact with the silicon melt. When the crystal rod is grown and separated from the silicon melt, the passage from the lifting mechanism 23 to the melt is disconnected, and the potential of the lifting mechanism 23 rises to 10 V, thereby determining the growth state of the crystal rod.

[0050] It should be noted that, since the crystal growth furnace 100 is a closed environment and the conditions inside the furnace are not easy to observe, in the above arrangement, the potential change of the lifting mechanism 23 is sampled by the potential detection component so that the operator can know the growth status of the crystal rod in time.

[0051] In the above configuration, the growth state of the crystal rod is known through the change in potential, and a timely response can be made after the potential rises to a preset value, thereby reducing the power of the crystal growth furnace 100, thereby reducing energy consumption and saving production costs. In addition, the growth state of the crystal rod is known through the change in potential, and the crystal growth furnace 100 can execute subsequent automation steps in a timely manner after the potential rises to a preset value, thereby improving production efficiency.

[0052] like Figure 3 and Figure 4 As shown, as an implementation, the lifting mechanism 23 includes a lifting bracket 231, a first bushing structure 232 and an insulating ring 233. The lifting bracket 231 constitutes the main frame of the lifting mechanism 23. To ensure the structural strength of the lifting mechanism 23, the lifting bracket 231 is generally a metal part.

[0053] Specifically, the insulating ring 233 is at least partially penetrated in the lifting bracket 231 along the vertical direction, and the first bushing structure 232 is penetrated in the insulating ring 233 along the vertical direction, so that the insulating ring 233 is sleeved between the lifting bracket 231 and the first bushing structure 232, and the lifting shaft 22 is rotatably connected to the lifting bracket 231 through the first bushing structure 232. The lifting shaft 22 is rotatably connected to the lifting bracket 231 through the first bushing structure 232.

[0054] Since the first bushing structure 232 and the lifting bracket 231 are both metal parts, in order to prevent direct contact between the first bushing structure 232 and the lifting bracket 231, an insulating ring 233 is provided to avoid a current path between the first bushing structure 232 and the lifting bracket 231.

[0055] In the embodiment of the present application, the potential detection component is connected to the first bushing structure 232 or the lifting shaft 22 .

[0056] like Figure 3As shown, as an implementation method, the first bushing structure 232 and the insulating ring 233 are fixedly connected by a fastener 234. When the first bushing structure 232 is connected to the insulating ring 233, the fastener 234 is inserted through the first bushing structure 232, the insulating ring 233 and the lifting bracket 231. Since the fastener 234 is generally made of metal, in order to prevent the first bushing structure 232 from being connected to the lifting bracket 231 through the fastener 234, in the example of the present application, an insulating layer 235 is also provided between the fastener 234 and the first bushing structure 232.

[0057] Specifically, a through hole is formed on the first bushing structure 232 for the fastener 234 to pass through, and the insulating layer 235 is disposed in the through hole.

[0058] Exemplarily, the insulating layer 235 may be an insulating sleeve, or the insulating layer 235 may be an insulating coating on the outer surface of the fastener 234 or the inner surface of the through hole, so as to achieve an insulating effect.

[0059] More preferably, in order to improve the stability of the connection between the first bushing structure 232 and the lifting bracket 231, the insulating layer 235 uses a metal spacer and covers the surface of the metal spacer with insulating paint, which not only avoids conduction between the first bushing structure 232 and the lifting bracket 231, but also extends the service life of the insulating layer 235.

[0060] It should be noted that the number of fasteners 234 can be set to multiple, which is specifically determined by the connection stability between the first bushing structure 232 and the lifting bracket 231 during the actual assembly process. At least one insulating layer 235 is provided on any fastener 234.

[0061] like Figure 2 As shown, as an implementation, the lifting assembly 20 further includes a first sensor 24, which is a distance sensor for detecting the distance between the lifting mechanism 23 and the first sensor 24, so as to determine the lifting height of the crystal rod. Specifically, the first sensor 24 is disposed at the top of the lifting support 21.

[0062] Specifically, the lifting bracket 21 includes a screw rod 212 extending in the vertical direction, and the lifting mechanism 23 is movably connected to the lifting bracket 21 through the screw rod 212. A motor for driving the screw rod 212 to rotate is provided at the lower end of the screw rod 212, and the screw rod 212 is driven to rotate by the motor, thereby driving the lifting mechanism 23 to move in the vertical direction.

[0063] Optionally, the first sensor 24 is disposed at the top of the screw rod 212 .

[0064] like Figure 3As shown, as an implementation, the lifting assembly 20 further includes a second sensor 25 , and the second sensor 25 is at least partially disposed between the lifting mechanism 23 and the screw rod 212 , and the weight of the crystal rod is detected by the second sensor 25 .

[0065] Exemplarily, the second sensor 25 is a tension sensor. The second sensor 25 is at least partially disposed above the lifting mechanism 23. The second sensor 25 samples the downward pulling force applied by the lifting mechanism 23 to determine the weight of the crystal rod.

[0066] In some examples, the second sensor 25 can also be configured as a weighing sensor. The second sensor 25 is at least partially disposed below the lifting mechanism 23. The second sensor 25 samples the downward pressure applied by the lifting mechanism 23 to determine the weight of the crystal rod.

[0067] like Figure 5 As shown, as an implementation method, a second bushing structure 26 is also provided on the lifting bracket 21. The second bushing structure 26 is sleeved on the outer edge of the lifting shaft 22, and the outer edge of the second bushing structure 26 is fastened to the lifting bracket 21. The second bushing structure 26 is installed below the lifting mechanism 23.

[0068] Specifically, a bushing chamber 261 is formed between the second bushing structure 26 and the lifting bracket 21, and a magnetic fluid for insulation is filled in the bushing chamber 261 to ensure the insulation effect between the lifting shaft 22 and the lifting bracket 21, thereby avoiding affecting the position detection of the crystal rod. In addition, the magnetic fluid can also reduce the friction at the second bushing structure 26 and extend the service life of the equipment.

[0069] When the crystal ingot is grown, the grown crystal ingot is pulled into the auxiliary furnace chamber 30 by the pulling assembly 20. The auxiliary furnace chamber 30 includes an auxiliary furnace body 31 and an auxiliary furnace door 32. The auxiliary furnace door 32 is installed on one side of the auxiliary furnace body 31 and is movably connected to the auxiliary furnace body 31. The auxiliary furnace chamber 30 has a lateral opening, and the auxiliary furnace door 32 is used to close the opening. The crystal growth furnace 100 is equipped with a rotary arm assembly (not shown) for picking up the crystal ingot. The grown crystal ingot is taken out of the auxiliary furnace chamber 30 by the rotary arm assembly and transported to the next processing area.

[0070] like Figure 6 As shown, as an implementation, the auxiliary furnace chamber 30 includes an air pressure detection component 33 and a clamping component 34, the air pressure detection component 33 is electrically connected to the clamping component 34, and the air pressure detection component 33 is at least partially disposed on the auxiliary furnace body 31, and is used to detect the air pressure in the auxiliary furnace chamber 30. The clamping component 34 extends or contracts according to the air pressure sampling signal representing the air pressure in the auxiliary furnace chamber 30 sampled by the air pressure detection component 33, so as to clamp or release the crystal rod, thereby preventing the crystal rod from falling during the picking process.

[0071] Specifically, the clamping assembly 34 includes a telescopic mechanism 341 and a driving mechanism 342. The telescopic mechanism 341 is at least partially fixedly mounted on the auxiliary furnace body 31, and at least part of the telescopic mechanism 341 extends into the auxiliary furnace body 31. One end of the driving mechanism 342 is transmission-connected to the telescopic mechanism 341, and the other end of the driving mechanism 342 is electrically connected to the air pressure detection assembly 33. The driving mechanism 342 can receive the air pressure sampling signal sent by the air pressure detection assembly 33, and control the telescopic mechanism 341 to extend or retract according to the air pressure sampling signal.

[0072] It should be noted that in the process of picking up the crystal rod, at least part of the rotary arm assembly needs to extend into the auxiliary furnace chamber 30, and the crystal rod is clamped by the rotary arm assembly, so as to achieve the crystal shearing action. In order to prevent the crystal rod from falling out of the auxiliary furnace body 31 along the opening during the crystal shearing process. The present application uses the above-mentioned clamping assembly 34. When the air pressure value sampled by the air pressure detection assembly 33 is less than the set threshold, the driving mechanism 342 controls the telescopic mechanism 341 to extend in the direction of the crystal rod according to the acquired air pressure sampling signal, so that the telescopic mechanism 341 is at least partially blocked between the crystal rod and the opening, thereby reducing the safety risk caused by the crystal rod falling along the opening.

[0073] As an implementation method, the number of clamping assemblies 34 is set to at least two, and the clamping assemblies 34 are centrally symmetrically distributed about the axial center line of the crystal rod. The clamping assemblies 34 on both sides limit the crystal rod, which can not only prevent the crystal rod from falling into the opening, but also prevent the crystal rod from sliding down and causing damage to the equipment.

[0074] Furthermore, the auxiliary furnace chamber 30 includes a plurality of clamping assemblies 34 composed of a driving mechanism 342 and a telescopic mechanism 341 , and the plurality of clamping assemblies 34 are distributed along the vertical direction, thereby improving the clamping effect on the crystal rod.

[0075] As an implementation method, a position detection module (not shown) is provided on the auxiliary furnace chamber 30, and the driving mechanism 342 is connected to the position detection module in communication. The position detection module is used to sample a detection signal representing the spacing distance between the rotary arm assembly and the auxiliary furnace chamber 30. When the spacing between the rotary arm assembly and the auxiliary furnace chamber 30 is less than the set distance, the driving mechanism 342 controls the telescopic mechanism 341 to move away from the crystal rod in response to the detection signal sent by the position detection module, thereby releasing the crystal rod.

[0076] Through the above arrangement, a linkage control is formed between the clamping assembly 34 and the rotary arm assembly, so that the automation effect of the crystal growth furnace 100 is higher.

[0077] As an optional implementation, the position detection module can also be arranged on the rotary arm assembly, and the position detection module communicates with the driving mechanism 342 by wireless signal transmission. When the rotary arm assembly approaches the auxiliary furnace chamber 30, the driving mechanism 342 receives and controls the telescopic mechanism 341 to move away from the crystal rod in response to the detection signal sent by the position detection module, thereby releasing the crystal rod.

[0078] Through the above arrangement, the rotary arm assembly can be configured for any crystal growth furnace 100, thereby reducing the production cost of the equipment, and having better compatibility and facilitating the maintenance and replacement of the rotary arm assembly.

[0079] like Figure 7 As shown, as an implementation method, one side of the auxiliary furnace door 32 is hinged to the auxiliary furnace chamber 30, so that the auxiliary furnace door 32 can rotate relative to the auxiliary furnace chamber 30. The auxiliary furnace chamber 30 also includes a transmission assembly 35, and the auxiliary furnace door 32 is also movably connected to the auxiliary furnace body 31 through the transmission assembly 35, and the auxiliary furnace door 32 is opened or closed through the transmission assembly 35.

[0080] Specifically, the transmission assembly 35 includes a first driving device 351, a first connecting rod 352 and a second connecting rod 353, wherein the first driving device 351 can be a motor. The first driving device 351 is fixedly mounted on the auxiliary furnace body 31 and connected to one end of the first connecting rod 352, and the other end of the first connecting rod 352 is connected to the auxiliary furnace door 32 through the second connecting rod 353.

[0081] Furthermore, both ends of the first connecting rod 352 are movably connected to the first driving device 351 and the second connecting rod 353, so that an angle greater than or equal to 90° and less than or equal to 180° is formed between the first connecting rod 352 and the second connecting rod 353. Through the above arrangement, it is ensured that the first driving device 351 can drive the auxiliary furnace door 32 to open or close through the first connecting rod 352 and the second connecting rod 353.

[0082] like Figure 8 As shown, as an implementation method, a furnace cover 70 is further provided between the main furnace chamber 40 and the auxiliary furnace chamber 30, and the furnace cover 70 isolates the space between the main furnace chamber 40 and the auxiliary furnace chamber 30, and a number of observation holes 71 are provided on the furnace cover 70 so that the operator can observe the growth state of the crystal rod in the main furnace chamber 40.

[0083] Specifically, the crystal growth furnace 100 includes a furnace cover driving assembly 80 for driving the furnace cover 70 to move, one end of the furnace cover driving assembly 80 is fixedly connected to the furnace cover 70, and the other end of the furnace cover driving assembly 80 is fixedly connected to the frame 10. The furnace cover driving assembly 80 can drive the furnace cover 70 to move toward the side away from the main furnace chamber 40, and the furnace cover driving assembly 80 is also used to drive the furnace cover 70 to flip.

[0084] For example, when the crystal growth furnace 100 is to be maintained, the furnace cover 70 is flipped over by the furnace cover driving assembly 80 to open the opening above the main furnace chamber 40 , so that the operator can perform maintenance on the bottom surface of the furnace cover 70 .

[0085] like Fig. 9 As shown, further, the furnace cover driving assembly 80 includes a rotating shaft 81 extending along the preset straight line 101, and the furnace cover driving assembly 80 is fixedly connected to the furnace cover 70 via the rotating shaft 81. The furnace cover driving assembly 80 is also used to drive the furnace cover 70 to rotate along the axis direction around the rotating shaft 81.

[0086] An extension portion 811 is provided on the outer edge of the rotating shaft 81 , and the furnace cover driving assembly 80 further includes a second driving device 82 movably connected to the extension portion 811 , wherein the second driving device 82 has a retractable pull rod that extends downward and is movably connected to the extension portion 811 .

[0087] It should be noted that, in order to realize the flipping of the furnace cover 70 in the related art, a motor for driving the rotation shaft 81 to rotate is usually arranged in the extension direction of the rotation shaft 81. In the crystal growth furnace 100 provided in the present application, since the position on the frame 10 where the furnace cover driving assembly 80 can be arranged is limited (see Figure 1 ), especially in order to realize the flipping of the furnace cover 70, the furnace cover driving assembly 80 is easy to interfere with the rotary valve assembly 50. By providing the second driving device 82 and the extension part 811, the direction of the force applied to the rotating shaft 81 is changed to realize the flipping of the furnace cover 70, thereby avoiding the interference between the furnace cover driving assembly 80 and the surrounding components, and improving the compactness of the overall structure of the crystal growth furnace 100.

[0088] like Fig.10 As shown, as an implementation mode, the frame 10 includes a mounting bracket 11, and the furnace cover driving assembly 80 is detachably mounted on the mounting bracket 11. The furnace cover driving assembly 80 is provided with a limiting shaft 83, and the mounting bracket 11 includes a limiting groove 111 for accommodating the limiting shaft 83, and the limiting shaft 83 can be inserted into the limiting groove 111, so that the furnace cover driving assembly 80 is limited in any direction except the vertical direction through the cooperation of the limiting groove 111 and the limiting shaft 83.

[0089] Specifically, the furnace cover driving assembly 80 includes at least two limiting shafts 83 distributed along the vertical direction, and the mounting bracket 11 is provided with limiting grooves 111 with the same number as the limiting shafts 83 .

[0090] Furthermore, the limiting shaft 83 has the freedom of movement in the vertical direction in the limiting groove 111. When the furnace cover driving assembly 80 is connected to the mounting bracket 11, at least part of the limiting shaft 83 is inserted into the limiting groove 111, and the furnace cover driving assembly 80 abuts against the mounting bracket 11 under the action of its own gravity. At this time, the limiting shaft 83 and the limiting groove 111 are mutually engaged, thereby fixing the furnace cover driving assembly 80.

[0091] When the furnace cover 70 is covered on the main furnace chamber 40 , the mounting bracket 11 can move downward relative to the furnace cover driving assembly 80 so that the limiting shaft 83 can be disengaged from the limiting groove 111 , thereby achieving separation of the mounting bracket 11 from the furnace cover driving assembly 80 .

[0092] like Fig.10 As shown, in the embodiment of the present application, the limiting groove 111 includes a first part 1111 and a second part 1112 distributed along the vertical direction, wherein the first part 1111 is arranged above the second part 1112, and the space of the first part 1111 is connected to the space of the second part 1112.

[0093] Specifically, the width L1 of the first portion 1111 is greater than the width L2 of the second portion 1112 .

[0094] Exemplarily, when the limiting shaft 83 passes through the second portion 1112 , the mounting bracket 11 is engaged with the furnace cover drive assembly 80 , and when the limiting shaft 83 passes through the first portion 1111 , the mounting bracket 11 can be separated from the furnace cover drive assembly 80 .

[0095] Compared with the related art in which the connection or separation between the mounting bracket 11 and the furnace cover drive assembly 80 is achieved by connecting with fasteners 234, the above technical solution simplifies the difficulty of disassembly and assembly of the mounting bracket 11 and the furnace cover drive assembly 80, and can avoid wear at the connection between the mounting bracket 11 and the furnace cover drive assembly 80 after frequent disassembly and assembly.

[0096] As an implementation method, the rotating shaft 81 can not only rotate along its own circumferential direction, but also extend and retract along the direction of the preset straight line 101. When the furnace cover 70 is flipped to the maximum flip angle, the length of the rotating shaft 81 is extended or shortened to change the position of the furnace cover 70 relative to the main furnace chamber 40, making it easier to maintain the furnace cover 70.

[0097] It should be noted that the rotating shaft 81 can be driven by a motor to achieve rotation and extension, which will not be elaborated here.

[0098] like Fig.11 and Fig.12As shown, as an implementation, the furnace cover 70 is provided with an observation window 72, and an observation hole 71 is opened in the observation window 72 and penetrates the furnace cover 70 along a preset direction 102. The operator can observe the reaction status of the crystal rod in the reaction chamber of the main furnace chamber 40 through the observation hole 71.

[0099] like Fig.13 As shown, the observation window 72 is provided with a first protective layer 73 and an observation layer 74 distributed along a preset direction 102, wherein the first protective layer 73 and the observation layer 74 are both made of quartz glass. The first protective layer 73 is located on a side of the observation layer 74 close to the reaction chamber, the first protective layer 73 is detachably mounted on the observation window 72, and the observation layer 74 is fixedly mounted on the observation window 72.

[0100] It should be noted that since a large amount of oxides will be generated during the reaction of the crystal rod, in order to prevent the oxides from accumulating on the observation layer 74, resulting in the observation layer 74 being blocked, a detachable first protective layer 73 is provided, and when the furnace cover 70 is maintained, the first protective layer 73 to which the oxides are attached can be removed from the observation window 72 to clean or replace the first protective layer 73, thereby improving the convenience of maintenance of the furnace cover 70.

[0101] Specifically, at least one observation window 72 is provided on the furnace cover 70. When observed from the preset direction 102, the shape of the observation hole 71 may include at least one of the following shapes: a circular hole, a waist-shaped hole, a square hole, etc.

[0102] Furthermore, the observation window 72 is provided with a limiting member 75 , and the limiting member 75 limits the first protective layer 73 in a preset direction 102 . The limiting member 75 is disposed on a side of the first protective layer 73 away from the observation layer 74 .

[0103] The observation window 72 is provided with a mounting groove 721, which is distributed circumferentially around the observation hole 71, and at least a portion of the first protective layer 73 is disposed in the mounting groove 721. The stopper 75 is at least partially disposed in the mounting groove 721, and two sides of the first stopper 75 respectively abut against the first protective layer 73 and the inner wall of the mounting groove 721.

[0104] like Fig.13 As shown, the length of the installation groove 721 extending along the preset direction 102 is defined as the installation groove length D1, the length of the first protective layer 73 extending along the preset direction 102 is defined as the first structural length D2, and the length of the limit member 75 extending along the preset direction 102 is defined as the second structural length D3. The length of the installation groove 721 is greater than or equal to the sum of the first structural length and the second structural length.

[0105] Exemplarily, an end face of one side of the first protective layer 73 close to the reaction chamber abuts against the limiting member 75, and an elastic member can be provided on an end face of the one side of the first protective layer 73 away from the reaction chamber, and a force is applied to the first protective layer 73 toward the reaction chamber by the elastic member to enhance the limiting effect of the limiting member 75 and prevent the first protective layer 73 from deviating along the preset direction 102.

[0106] It can be understood that when the installation groove length D1 is greater than the sum of the first structure length D2 and the second structure length D3, the first protective layer 73 can be prevented from deviating along the preset direction 102 by the elastic member.

[0107] In some other examples, when the length of the installation groove 721 is equal to the sum of the first structural length and the second structural length, the limiting member 75 can also be configured as an elastic retaining ring.

[0108] like Fig.13 As shown, as an implementation method, the installation groove 721 has a groove limiting portion 7211 for limiting the first protective layer 73 in the preset direction 102. When the first protective layer 73 is arranged in the installation groove 721, the side of the first protective layer 73 facing away from the observation layer 74 abuts against the groove limiting portion 7211. In addition, when the first protective layer 73 is arranged in the installation groove 721, the limiting member 75 is sleeved on the groove limiting portion 7211, and the groove limiting portion 7211 limits the movement of the first protective layer 73 along the preset direction 102, while also preventing the limiting member 75 from being separated from the installation groove 721.

[0109] The groove limiting portion 7211 is provided to prevent the first protective layer 73 from deviating in any direction perpendicular to the preset direction 102 , and the groove limiting portion 7211 and the limiting member 75 cooperate with each other to improve the stability of the first protective layer 73 .

[0110] Furthermore, the limiting member 75 includes a main body portion and an operating portion (not shown) for the operator to grasp, wherein the main body portion is disposed in the mounting groove 721 , and the operating portion extends from the mounting groove 721 toward the reaction chamber.

[0111] Illustratively, when the furnace cover 70 is maintained, the furnace cover 70 is turned over and driven to leave the main furnace chamber 40. The operator can grasp the operating part of the limit member 75 from the bottom of the furnace cover 70. Since the limit member 75 is an elastic retaining ring, the operating part of the limit member 75 is squeezed to deform the main part of the limit member 75, so that the limit member 75 can be removed from the installation groove 721, and then the first protective layer 73 can be replaced.

[0112] like Fig.13As shown, as an implementation, the observation window 72 further includes a first window 722 and a second window 723, wherein the first window 722 is integrally formed with the body of the furnace cover 70, and the second window 723 is detachably disposed on the first window 722. The first protective layer 73 is detachably mounted on the first window 722, and the observation layer 74 is fixedly disposed on the second window 723.

[0113] Specifically, by disassembling the first window 722 , the observation layer 74 can be maintained.

[0114] Further, the furnace cover 70 further includes a second protective layer 76 disposed on the observation window 72, wherein the second protective layer 76 is detachably disposed on the second window 723, and the second protective layer 76 is located on the side of the observation layer 74 away from the first protective layer 73. In the above arrangement, the observation layer 74 is disposed between the first protective layer 73 and the second protective layer 76, and the first protective layer 73 and the second protective layer 76 are detachably disposed on the first window 722 and the second window 723, respectively, which is conducive to the protection of the observation layer 74 and the maintenance of the first protective layer 73 and the second protective layer 76, respectively.

[0115] It should be noted that the first protective layer 73 , the second protective layer 76 and the observation layer 74 are all made of quartz glass.

[0116] like Fig.14 As shown, as an implementation method, the crystal growth furnace 100 is equipped with at least one CCD detection component 90 for observing the reaction chamber of the main furnace chamber 40, and a CCD bracket 77 for fixing the CCD detection component 90 is provided on the furnace cover 70. The CCD bracket 77 includes a fixed bracket 771, a first movable bracket 772 and a rotating bracket 773.

[0117] The fixed bracket 771 is installed on the furnace cover 70 , and is used to directly or indirectly support the first movable bracket 772 and the rotating bracket 773 .

[0118] The first movable bracket 772 is installed on the fixed bracket 771 , and the first movable bracket 772 extends along the first direction 103 .

[0119] The rotating bracket 773 is rotatably disposed on the first movable bracket 772 , and the rotating bracket 773 has the freedom of movement relative to the first movable bracket 772 along the first direction 103 . The CCD detection component 90 is connected to the first movable bracket 772 via the rotating bracket 773 .

[0120] Through the above arrangement, the CCD detection component 90 can be adjusted in multiple directions, thereby improving the detection accuracy of the growth status of the crystal rod in the reaction chamber.

[0121] like Fig.14As shown, as an optional implementation, the CCD bracket 77 further includes a second movable bracket 774, and the second movable bracket 774 extends along the second direction 104. At least a portion of the second movable bracket 774 is connected to the first movable bracket 772, and the second movable bracket 774 has the freedom of movement along the first direction 103 relative to the first movable bracket 772. The second direction 104 and the first direction 103 are perpendicular to each other.

[0122] When the CCD bracket 77 includes at least a first movable bracket 772 and a second movable bracket 774, the first movable bracket 772 is fixedly mounted on the fixed bracket 771, the second movable bracket 774 is connected to the fixed bracket 771 through the first movable bracket 772, and the second movable bracket 774 can move relative to the first bracket along the first direction 103. The rotating bracket 773 is rotatably connected to the second movable bracket 774, and the rotating bracket 773 can move relative to the second movable bracket 774 along the second direction 104.

[0123] It should be noted that the structures of the first movable bracket 772 and the second movable bracket 774 are basically the same, and the difference is that the first movable bracket 772 and the second movable bracket 774 are assembled in different directions, so that the CCD detection component 90 can move along the first direction 103 and / or the second direction 104, respectively, and the adjustment range of the CCD detection component 90 is improved. In addition, since the structures of the first movable bracket 772 and the second movable bracket 774 are basically the same, the first movable bracket 772 and the second movable bracket 774 are interchangeable, which facilitates the maintenance of the CCD bracket 77 and the replacement of parts, thereby reducing maintenance costs.

[0124] like Fig.15 As shown, as an implementation, the rotating bracket 773 includes a CCD fixing portion 7731 and a CCD adjusting portion 7732, and the CCD fixing portion 7731 and the CCD adjusting portion 7732 are movably connected. The rotating bracket 773 is fixedly connected to the first movable bracket 772 or the second movable bracket 774 through the CCD, and the rotating bracket 773 is connected to the CCD detection component 90 through the CCD adjusting portion 7732.

[0125] Specifically, the CCD adjusting part 7732 and the CCD fixing part 7731 are in surface contact, and a reference line perpendicular to the contact surface between the CCD adjusting part 7732 and the CCD fixing part 7731 is defined. The CCD adjusting part 7732 is rotatably connected relative to the CCD fixing part 7731 around the reference line.

[0126] It should be noted that, in the example of the present application, the extension direction of the reference line is parallel to the first direction 103 .

[0127] In some examples, the extension direction of the baseline can also be any direction other than the first direction 103 and the second direction 104. By setting the contact surface of the CCD adjustment part 7732 and the CCD fixing part 7731 to a continuous curved surface, multi-angle detection of the CCD detection component 90 can be achieved.

[0128] In some other examples, the CCD bracket 77 includes at least two rotating brackets 773. When two adjacent rotating brackets 773 are connected, the CCD fixing portion 7731 of any rotating bracket 773 is connected to the CCD adjusting portion 7732 of the other rotating bracket 773.

[0129] Optionally, the number of rotating brackets 773 can be adjusted according to working conditions. By increasing the number of rotating brackets 773, the detection range of the CCD detection component 90 can be improved. The number of rotating brackets 773 is not specifically limited here.

[0130] like Fig.16 As shown, as an implementation method, the first movable bracket 772 includes a first guide portion 7721 and a first traction portion 7722, the first guide portion 7721 extends along the first direction 103, the first traction portion 7722 is movably connected to the first guide portion 7721, and has the freedom of movement along the first direction 103 relative to the first guide portion 7721, and the rotating bracket 773 or the second movable bracket 774 is mounted on the first traction portion 7722.

[0131] Specifically, the first guiding portion 7721 includes a first screw structure 7721a extending in the first direction 103 and a first limiting guide rail 7721b, the first traction portion 7722 is threadedly connected to the first screw structure 7721a, and at least a portion of the first traction portion 7722 is disposed on the first limiting guide rail 7721b.

[0132] The first traction part 7722 may be a slider disposed on the first screw structure 7721a. Since the first movable bracket 772 is directly or indirectly used to support the second movable bracket 774, the rotating bracket 773 and the CCD detection component 90, there are certain requirements for the stability of the connection between the first movable bracket 772 and the first traction part 7722. By providing the first traction part 7722 with a high structural strength, deformation of the first traction part 7722 is avoided, and the smoothness of the CCD detection component 90 during movement is ensured.

[0133] As an implementation method, the second movable bracket 774 includes a second guide portion 7741 and a second traction portion 7742, the second guide portion 7741 extends along the second direction 104, the second traction portion 7742 is movably connected to the second guide portion 7741, and has the freedom of movement along the second direction 104 relative to the second guide portion 7741, and the rotating bracket 773 is mounted on the second traction portion 7742.

[0134] Among them, the structures of the second guide portion 7741 and the second traction portion 7742 are respectively consistent with the structures of the first guide portion 7721 and the first traction portion 7722, and will not be elaborated herein.

[0135] like Fig.17 As shown, optionally, the CCD bracket 77 also includes an avoidance bracket 775, which has a special-shaped structure, one end of the avoidance bracket 775 is connected to the rotating bracket 773, and the other end of the avoidance bracket 775 is connected to the first movable bracket 772 or the second movable bracket 774.

[0136] Exemplarily, when the avoidance bracket 775 is connected to the first movable bracket 772 , the avoidance bracket 775 is fixed on the first traction portion 7722 and has the freedom of movement to move relative to the first guide portion 7721 along the first direction 103 .

[0137] In other examples, when the avoidance bracket 775 is connected to the second movable bracket 774 , the avoidance bracket 775 is fixed on the second traction portion 7742 and has the freedom of movement to move relative to the second guide portion 7741 along the second direction 104 .

[0138] It can be understood that since the space between the CCD bracket 77 and the furnace cover 70 for the CCD detection component 90 to move is limited, the avoidance bracket 775 can make the assembly of the CCD detection component 90 more flexible.

[0139] It should be understood that those skilled in the art can make improvements or changes based on the above description, and all these improvements and changes should fall within the scope of protection of the claims attached to this application.

Claims

1. A crystal growth furnace, comprising: Main furnace room; An auxiliary furnace chamber, the auxiliary furnace chamber is connected to the main furnace chamber and is arranged above the main furnace chamber; A pulling assembly, which is arranged above the auxiliary furnace chamber and is used for pulling a crystal rod; It is characterized in that The lifting assembly comprises: a lifting shaft, a lifting bracket and a lifting mechanism, wherein the lifting shaft is connected to the lifting bracket through the lifting mechanism, the lifting mechanism is slidably connected to the lifting bracket, and the lifting mechanism has a degree of freedom of movement relative to the lifting bracket in a vertical direction; The crystal growth furnace further includes a potential detection component electrically connected to the lifting mechanism, wherein the potential detection component is used to detect the potential of the lifting mechanism and determine whether the crystal rod is separated from the silicon melt according to the potential of the lifting mechanism.

2. The crystal growth furnace according to claim 1, characterized in that: The lifting mechanism comprises: A lifting bracket, the lifting bracket is slidably connected to the lifting bracket; an insulating ring, at least a portion of which is inserted into the lifting bracket; A first bushing structure, at least a portion of which is inserted into the insulating ring, and the first bushing structure is connected to the lifting shaft.

3. The crystal growth furnace according to claim 2, characterized in that: The potential detection component is connected to the first bushing structure or the lifting shaft.

4. The crystal growth furnace according to claim 2, characterized in that: The first bushing structure and the insulating ring are connected to the lifting bracket via fasteners. A through hole is provided on the first bushing structure for the fastener to pass through. The fastener is sequentially passed through the first bushing structure, the insulating ring and the lifting bracket.

5. The crystal growth furnace according to claim 4, characterized in that: An insulating layer is arranged in the through hole of the first bushing structure, and the insulating layer includes at least one of an insulating coating and an insulating spacer.

6. The crystal growth furnace according to claim 1, characterized in that: The lifting assembly also includes a first sensor, which is arranged at the top end of the lifting bracket, and the lifting height of the lifting mechanism is detected by the first sensor.

7. The crystal growth furnace according to claim 6, characterized in that: The lifting bracket has a screw rod extending in a vertical direction, the lifting mechanism is connected to the lifting bracket through the screw rod, and the lifting mechanism is driven to move in a vertical direction by rotating the screw rod, and the first sensor is arranged at the top end of the screw rod.

8. The crystal growth furnace according to claim 7, characterized in that: The lifting assembly further includes a second sensor for detecting the weight of the crystal rod, and the second sensor is at least partially disposed between the lifting mechanism and the lead screw.

9. The crystal growth furnace according to claim 8, characterized in that: The second sensor is arranged below the lifting mechanism, and the second sensor is a weighing sensor; Or the second sensor is arranged above the lifting mechanism, and the second sensor is a tension sensor.

10. The crystal growth furnace according to claim 1, characterized in that: The lifting bracket is provided with a second bushing structure sleeved on the lifting shaft, the second bushing structure is fixedly connected to the lifting bracket, and the second bushing structure is installed below the lifting mechanism, and magnetic fluid for insulation is filled between the second bushing structure and the lifting bracket.

Images