Thin film deposition furnace tube and chemical vapor deposition equipment

By setting a recessed structure on the inner wall of the thin-film deposition furnace tube and covering a corrosion-resistant protective coating, the problem of short service life of the quartz furnace tube is solved, extending the service life and reducing production costs.

CN222313290UActive Publication Date: 2025-01-07LONGI GREEN ENERGY TECH CO LTD
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Patent Information

Application Number
CN202421029070.5
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-05-11
Publication Date
2025-01-07
Estimated Expiration
2034-05-11

AI Technical Summary

Technical Problem

The service life of quartz furnace tubes in existing LPCVD equipment is short, resulting in frequent replacement and increased production costs, mainly due to the erosion and cracks caused by thermal expansion of silicon films and the thermal stress between quartz furnace tubes.

Method used

Several first depression structures are provided on the inner wall of the thin film deposition furnace tube and covered with a protective coating. The protection coating has a second depression structure, and the material is aluminum oxide, silicon oxide or silicon nitride, which is between the furnace body and the deposited silicon. , slow down the growth and thermal stress distribution of silicon films, and enhance the strength of the furnace tube.

Benefits of technology

It extends the service life of the thin-film deposition furnace tube, avoids the direct erosion of the furnace body of silicon films, slows down the growth of silicon films, enhances the strength of the furnace tubes, and reduces production costs.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a thin film deposition furnace tube and chemical vapor deposition equipment, the thin film deposition furnace tube comprises a furnace body, the inner wall of the furnace body is provided with a plurality of discrete first concave structures; and the protective coating is arranged on the inner wall of the furnace body, and a plurality of second sunken structures corresponding to the first sunken structures are formed on the protective coating in the direction away from the inner wall of the furnace body. In the embodiment of the utility model, the service life of the thin film deposition furnace tube can be prolonged by arranging the plurality of first concave structures and the protective coating on the inner wall of the furnace body, and the service life of the thin film deposition furnace tube can be better prolonged by combining the first concave structures and the protective coating.
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Description

Technical Field

[0001] The utility model relates to the field of chemical vapor deposition, in particular to a thin film deposition furnace tube and chemical vapor deposition equipment. Background Art

[0002] Chemical Vapor Deposition (CVD) is one of the processes for epitaxial thin film growth, semiconductor manufacturing, and photovoltaic manufacturing. Currently, LPCVD (Low Pressure Chemical Vapor Deposition) equipment is mainly used to achieve the deposition of silicon oxide, polycrystalline silicon, amorphous silicon, etc. on silicon wafers.

[0003] At present, LPCVD equipment includes a quartz furnace tube, in which silicon wafers are deposited. However, during long-term use, a layer of silicon film will be deposited on the inner wall of the quartz furnace tube. When the silicon film deposited on the inner wall of the furnace tube reaches a certain thickness, it will corrode the quartz furnace tube, causing the quartz furnace tube to break, which in turn shortens the service life of the quartz furnace tube. Utility Model Content

[0004] The utility model provides a thin film deposition furnace tube and chemical vapor deposition equipment, aiming at least to solve the technical problem of short service life of quartz furnace tubes in the prior art.

[0005] In a first aspect, an embodiment of the utility model provides a thin film deposition furnace tube, comprising:

[0006] A furnace body, wherein the inner wall of the furnace body has a plurality of discrete first concave structures;

[0007] The protective coating is arranged on the inner wall of the furnace body. In the direction away from the inner wall of the furnace body, the protective coating is formed with a plurality of second recessed structures corresponding to the plurality of first recessed structures.

[0008] Optionally, the surface roughness R of the inner wall of the furnace body is a Greater than 0.1 micron.

[0009] Optionally, the surface roughness R of the inner wall of the furnace body is a Less than 10 microns - 100 microns.

[0010] Optionally, the thickness of the protective coating is less than the surface roughness R of the inner wall of the furnace body. a and / or,

[0011] The thickness of the protective coating is less than the depth of the first recessed structure; and / or,

[0012] Along the axial direction of the furnace body, the maximum size of the first recessed structure is greater than or equal to the

[0013] The depth of the first recessed structure.

[0014] Optionally, the furnace body includes a main body and a furnace mouth and a furnace tail connected at both ends of the main body, and the density of the first recessed structure at the inner wall of the furnace mouth and the inner wall of the furnace tail is greater than the density of the first recessed structure at the inner wall of the main body.

[0015] Optionally, along the axial direction of the furnace body, a minimum distance between two adjacent first recessed structures is greater than a difference between a depth of the first recessed structure and a thickness of the protective coating.

[0016] Optionally, the inner wall of the furnace body further includes a flattened portion connecting a plurality of the first recessed structures, and the ratio of the surface area of ​​the flattened portion to the inner circumferential area of ​​the furnace body is 0.1-0.3.

[0017] Optionally, the protective coating has a thickness of 10 microns to 100 microns.

[0018] Optionally, the protective coating is any one of an aluminum oxide coating, a silicon oxide coating, a silicon nitride coating, and a silicon carbide coating;

[0019] The furnace body is any one of a quartz glass furnace body, a silicon carbide furnace body, a high-temperature alloy furnace body, a stainless steel furnace body, and a zirconium oxide furnace body.

[0020] In a second aspect, an embodiment of the utility model provides a chemical vapor deposition device, comprising any of the thin film deposition furnace tubes described above.

[0021] In the embodiment of the utility model, the protective coating plays the role of protecting the inner wall of the furnace body. During use, the protective coating is between the furnace body and the deposited silicon generated during the low-pressure chemical vapor deposition process. The deposited silicon will adhere to the protective coating, avoiding direct contact between the furnace body and the deposited silicon, thereby avoiding direct erosion of the furnace body by the deposited silicon, thereby extending the service life of the thin film deposition furnace tube. In addition, since the protective coating includes a plurality of second recessed structures, that is, the protective coating has a certain roughness, the growth of the deposited silicon generated during the process on the protective coating is slowed down. In addition, by setting the protective coating, the strength of the thin film deposition furnace tube is also enhanced, thereby extending the service life of the thin film deposition furnace tube. The inner wall of the furnace body is roughened to form a plurality of first recessed structures, and the thermal stress is dispersed by the plurality of first recessed structures, thereby avoiding damage to the thin film deposition furnace tube caused by large thermal stress.

[0022] In summary, setting a plurality of first recessed structures and a protective coating on the inner wall of the furnace body can improve the service life of the thin film deposition furnace tube. Combining the two can better improve the service life of the thin film deposition furnace tube; and the formed protective coating is not easy to fall off.

[0023] The above description is only an overview of the technical solution of the utility model. In order to more clearly understand the technical means of the utility model, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the utility model more obvious and easy to understand, the specific implementation methods of the utility model are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A schematic diagram of the front view structure of a thin film deposition furnace tube provided in an embodiment of the utility model;

[0025] Figure 2 A schematic diagram of the side structure of a thin film deposition furnace tube provided by an embodiment of the utility model;

[0026] Figure 3 A schematic diagram of the three-dimensional structure of a thin film deposition furnace tube provided in an embodiment of the utility model.

[0027] Reference numerals:

[0028] 1-furnace body, 11-first recessed structure, 12-deposition chamber, 13-flattening portion, 2-protective coating, 21-second recessed structure. DETAILED DESCRIPTION

[0029] The exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0030] During long-term use, a layer of silicon film will be deposited on the inner wall of the quartz furnace tube. Due to the inconsistency of the thermal expansion coefficients of quartz and silicon films, thermal stress will be generated between the quartz furnace tube and the silicon film. When the silicon film deposited on the inner wall of the furnace tube reaches a certain thickness, it will erode the quartz furnace tube. At this time, the silicon film will fuse with the surface of the quartz furnace tube to form a fusion layer, and at the same time cause the growth and expansion of micro cracks on the inner wall of the quartz furnace tube; as the number of times the quartz furnace tube is used increases, the thickness of the fusion layer will continue to increase, and the crack depth will further expand. The existence of cracks reduces the ultimate fracture strength of the quartz furnace tube from several thousand MPa in theory to tens of MPa. When external force impact (such as the impact caused by opening and closing the furnace door) or the thermal stress during rapid temperature increase and decrease exceeds its ultimate fracture strength, the quartz furnace tube will break.

[0031] At present, the service life of quartz furnace tubes is relatively short, usually only about 3 months. Since quartz furnace tubes that have been used for longer than their service life are very easy to break, they need to be frequently shut down to replace the quartz furnace tubes, which seriously affects the operating time and production yield of chemical vapor deposition equipment and increases production costs. In order to solve the above problems, the embodiment of the utility model provides a thin film deposition furnace tube and a low-pressure chemical vapor deposition furnace tube.

[0032] Accumulated equipment.

[0033] First, refer to Figures 1 to 3 An embodiment of the utility model discloses a thin film deposition furnace tube, comprising: a furnace body 1, the inner wall of the furnace body 1 having a plurality of discrete first recessed structures 11; a protective coating 2, arranged on the inner wall of the furnace body 1, and in the direction away from the inner wall of the furnace body 1, the protective coating 2 is formed with a plurality of second recessed structures 21 corresponding to the plurality of first recessed structures 11.

[0034] Specifically, the furnace body 1 has a deposition chamber 12, and silicon wafers are deposited with silicon oxide, polysilicon, amorphous silicon, etc. in the deposition chamber 12. A plurality of first recessed structures 11 can be formed by a roughening treatment, and the roughening treatment can be a frosting treatment or a corrosion treatment. The frosting treatment is to mechanically or manually grind the inner wall of the furnace body 1 with an abrasive to produce a uniform and rough surface. The corrosion treatment is to corrode the inner wall of the furnace body 1 with a corrosive agent to make the inner wall of the furnace body 1 rough. The first recessed structure 11 can be a hollow pyramid-like structure, and the top of the pyramid-like structure faces the outside of the thin film deposition furnace tube. The first recessed structure 11 can also be an arc-shaped structure.

[0035] The material of the protective coating 2 is different from that of the furnace body 1. The protective coating 2 is made of a pollution-free and corrosion-resistant material to avoid cracks in the protective coating after the thin film deposition furnace tube is cleaned. The material of the protective coating 2 can be any one of aluminum oxide, silicon oxide, silicon nitride, and silicon carbide. The second recessed structure 21 covers the first recessed structure 11, and the second recessed structure 21 can be a hollow pyramid-like structure. Several second recessed structures 21 can make the deposited silicon adhere to the protective coating 2 more evenly.

[0036] The material of the protective coating 2 has a certain thermal expansion coefficient. When the furnace body 1 is a quartz glass furnace body, that is, when the material of the furnace body 1 is silicon dioxide, the thermal expansion coefficient of the material of the protective coating 2 can be between the thermal expansion coefficient of silicon dioxide and the thermal expansion coefficient of deposited polysilicon. The thermal expansion coefficient of the material of the protective coating 2 can also be close to the thermal expansion coefficient of silicon dioxide or the thermal expansion coefficient of polysilicon. The material of the protective coating 2 can be silicon dioxide, polysilicon, amorphous silicon, etc.

[0037] A protective coating 2 is provided on the inner wall of the furnace body 1, and the protective coating 2 plays the role of protecting the inner wall of the furnace body 1. During use, the protective coating 2 is between the furnace body 1 and the deposited silicon generated during the low-pressure chemical vapor deposition process. The deposited silicon will adhere to the protective coating 2, avoiding direct contact between the furnace body 1 and the deposited silicon, thereby avoiding direct erosion of the furnace body 1 by the deposited silicon, thereby extending the service life of the thin film deposition furnace tube. In addition, since the protective coating 2 includes a plurality of second recessed structures 21, that is, the protective coating 2 has a certain roughness, the growth of the deposited silicon generated during the process on the protective coating 2 is slowed down. In addition, by providing the protective coating 2, the strength of the thin film deposition furnace tube is also enhanced, thereby extending the service life of the thin film deposition furnace tube. The inner wall of the furnace body 1 is roughened to form a plurality of first recessed structures 11, and the thermal stress is dispersed by the plurality of first recessed structures 11, thereby avoiding damage to the thin film deposition furnace tube caused by large thermal stress.

[0038] In summary, the provision of a plurality of first recessed structures 11 and the provision of a protective coating 2 on the inner wall of the furnace body 1 can both increase the service life of the thin film deposition furnace tube. Combining the two can achieve a better effect on the service life of the thin film deposition furnace tube, and the formed protective coating 2 is not easy to fall off. In addition, since the service life of the thin film deposition furnace tube is increased, frequent replacement of the thin film deposition furnace tube is avoided, thereby reducing production costs.

[0039] It should be noted that when the furnace body 1 is a double tube, that is, the furnace body 1 includes an outer tube and an inner tube, the inner wall of the inner tube may be formed with the first recessed structure 11 .

[0040] The surface roughness R of the inner wall of the furnace body 1 a Greater than 0.1 micron.

[0041] Specifically, the deposited silicon exists in the form of particles, and the surface roughness R of the inner wall of the furnace body 1 is a The surface roughness R of the inner wall of the furnace body 1 is greater than the size of the smallest deposited silicon particle. When the temperature is about 600°C, the surface roughness of the deposited silicon-based film is about 0.1 micron. Therefore, the size of the smallest deposited silicon particle can be 0.1 micron. a The surface roughness R of the inner wall of the furnace body 1 is greater than 0.1 micron. a It can be 10 microns, 15 microns, 20 microns, 30 microns, etc. In the embodiment of the utility model, the surface roughness R of the inner wall of the furnace body 1 is a Within the above range, refer to Figure 3 , so that the deposited silicon particles can be deposited between two adjacent first recessed structures 11, and the deposited silicon is distributed more evenly, which is conducive to dispersing thermal stress.

[0042] The surface roughness R of the inner wall of the furnace body 1 a Less than 10 microns - 100 microns.

[0043] Specifically, the surface roughness R of the inner wall of the furnace body 1 is a Smaller than the minimum peeling size that affects the battery process. When the size of the detached silicon film is larger than the minimum peeling size that affects the battery process, it will affect the effect of the silicon film layer deposited on the silicon wafer. The value of the minimum peeling size that affects the battery process can be determined as 10 microns to 100 microns according to the actual process.

[0044] The surface roughness R of the inner wall of the furnace body 1 a When the surface roughness R of the inner wall of the furnace body 1 is controlled, the first recessed structure 11 can be prevented from being overly deposited with silicon, thereby preventing the deposited silicon-based thin film from being oversized when it falls off. a , it is possible to control the size and time of the deposited silicon-based film falling off, thereby controlling the size of the silicon-based film falling off within an appropriate range, avoiding the process effect being affected by the large-scale falling off of the silicon-based film or the floating of small particles, and improving the process yield.

[0045] The thickness of the protective coating 2 is less than the surface roughness R of the inner wall of the furnace body 1 a ; and / or, the thickness of the protective coating 2 is less than the depth of the first recessed structure 11; and / or, along the axial direction of the furnace body 1, the maximum size of the first recessed structure 11 is greater than or equal to the depth of the first recessed structure 11.

[0046] Specifically, when the protective coating 2 is provided on the rough inner wall of the furnace body 1, the thickness of the protective coating 2 must be controlled so that the surface of the protective coating 2 away from the furnace body 1 after forming is also a rough surface. Figure 1The maximum size of the first recessed structure 11 along the axial direction of the furnace body 1 can be referred to as d2. Figure 1 The maximum dimension d3 of the first recessed structure 11 is greater than or equal to the depth d2 of the first recessed structure 11 .

[0047] If the thickness of the protective coating 2 is greater than or equal to the surface roughness R of the inner wall of the furnace body 1 a , and / or, the thickness of the protective coating 2 is greater than the depth of the first recessed structure 11, the protective coating 2 will cover a number of the first recessed structures 11, and the surface of the protective coating 2 away from the furnace body 1 after forming will be a smooth surface. In the embodiment of the utility model, the thickness of the protective coating 2 is less than the surface roughness R of the inner wall of the furnace body 1. a , and / or, the thickness of the protective coating 2 is less than the depth of the first recessed structure 11, so that the surface of the protective coating 2 away from the furnace body 1 after forming is also a rough surface, that is, to ensure that the protective coating 2 includes a plurality of second recessed structures 21 corresponding to the plurality of first recessed structures 11 respectively.

[0048] The furnace body 1 includes a main body and a furnace mouth and a furnace tail connected at both ends of the main body. The density of the first recessed structure 11 at the inner wall of the furnace mouth and the inner wall of the furnace tail is greater than the density of the first recessed structure 11 at the inner wall of the main body.

[0049] The furnace mouth and the furnace tail are located at the two ends of the main body along the axial direction of the furnace body 1. The lengths of the furnace mouth and the furnace tail are both 5%-10% of the length of the furnace body 1, and generally correspond to the temperature rise zone and the temperature drop zone of the furnace body. The density of the first recessed structure 11 at the inner wall of the main body is the number of the first recessed structures 11 at the inner wall of the main body divided by the inner circumferential area of ​​the main body. The inner circumferential area of ​​the main body refers to the surface area of ​​the inner wall of the main body before the first recessed structure 11 is formed on the main body. The density of the first recessed structure 11 at the inner wall of the furnace mouth is the number of the first recessed structures 11 at the inner wall of the furnace mouth divided by the inner circumferential area of ​​the furnace mouth. The inner circumferential area of ​​the furnace mouth refers to the surface area of ​​the inner wall of the furnace mouth before the first recessed structure 11 is formed on the furnace mouth. The density of the first recessed structures 11 on the inner wall of the furnace tail is the number of the first recessed structures 11 on the inner wall of the furnace tail divided by the inner circumferential area of ​​the furnace tail. The inner circumferential area of ​​the furnace tail refers to the surface area of ​​the inner wall of the furnace tail before the first recessed structures 11 are formed on the furnace tail.

[0050] The furnace mouth and furnace tail in the furnace body 1 are close to the external area, where the thermal gradient and thermal stress are the largest, and they are easily broken after corrosion. In the embodiment of the utility model, the density of the first concave structure 11 at the inner wall of the furnace mouth and the inner wall of the furnace tail is greater than the density of the first concave structure at the inner wall of the main body, thereby avoiding damage to the furnace mouth and the furnace tail due to large thermal stress.

[0051] Along the axial direction of the furnace body 1, the minimum distance between two adjacent first recessed structures 11 is greater than the difference between the depth of the first recessed structure 11 and the thickness of the protective coating 2. The minimum distance between two adjacent first recessed structures 11 can be referred to Figure 1 The depth of the first recessed structure 11 can refer to d1 shown in Figure 1 If the minimum distance d1 between two adjacent first recessed structures 11 is too small, the stress of deposited silicon therein is relatively large. In the embodiment of the utility model, by setting the minimum distance between two adjacent first recessed structures 11 within the above range, the stress of deposited silicon is avoided to be relatively large.

[0052] The inner wall of the furnace body 1 further includes a flattened portion 13 connecting the plurality of first recessed structures 11, and the ratio of the surface area of ​​the flattened portion 13 to the inner peripheral area of ​​the furnace body 1 is 0.1-0.3, so as to ensure the discreteness of the plurality of second recessed structures 21. The ratio of the surface area of ​​the flattened portion 13 to the surface area of ​​the inner wall of the furnace body 1 can be 0.1, 0.15, 0.2, 0.25, 0.3, etc. The inner peripheral area of ​​the furnace body 1 refers to the surface area of ​​the inner wall of the furnace body 1 before the first recessed structures 11 are formed on the furnace body 1.

[0053] The thickness of the protective coating 2 is 10 micrometers to 100 micrometers.

[0054] Specifically, the thickness of the protective coating 2 can be 10 microns, 15 microns, 20 microns, 50 microns, 100 microns, etc. The thickness of the protective coating 2 is preferably 10 microns. When the thickness of the protective coating 2 is within the above range, it has a certain protective effect and is relatively low in cost.

[0055] The protective coating 2 is any one of aluminum oxide coating, silicon oxide coating, silicon nitride coating and silicon carbide coating. The furnace body 1 is any one of quartz glass furnace body, silicon carbide furnace body, high temperature alloy furnace body, stainless steel furnace body and zirconium oxide furnace body.

[0056] Specifically, the protective coating 2 is preferably an aluminum oxide coating. The protective coating 2 can also be a coating of aluminum oxide combined with silicon nitride, silicon carbide, etc. Quartz glass is a special industrial technical glass made of silicon dioxide, and quartz glass has excellent high temperature resistance. When the furnace body 1 is a stainless steel furnace body or a high-temperature alloy furnace body, since stainless steel or high-temperature alloys have high strength and toughness, they are not easy to break and damage, thereby further improving the service life of the thin film deposition furnace tube. Silicon carbide and zirconium oxide are both ceramic materials. Silicon carbide can still maintain strength at high temperatures, and zirconium oxide has high strength and high toughness. Therefore, when the furnace body 1 is a silicon carbide furnace body or a zirconium oxide furnace body, the service life of the thin film deposition furnace tube can be further improved.

[0057] The material of the protective coating 2 is sprayed on the inner wall of the furnace body 1 by a spraying tool; or, the protective coating 2 is formed on the inner wall of the furnace body by a saturation process.

[0058] Specifically, the spraying tool may be a spray gun. After the spray solution is evenly sprayed on the inner wall of the furnace body 1 by the spray gun, a hot air gun may be used for drying. The setting temperature of the hot air gun may be 200° C.-300° C. In this way, there is no need to use large equipment, which reduces equipment and energy consumption.

[0059] The spraying solution uses nano-scale alumina dispersion or silica sol as a solution carrier, and is added with micron-scale ceramic material particles such as alumina, silicon nitride, silicon carbide, etc. Pure water can also be added to the spraying solution as a diluent.

[0060] The formula of the spraying solution may be 40wt%-60wt% of an aluminum oxide dispersion and 40wt%-60wt% of first micron-sized ceramic particles, and the first ceramic particles may be aluminum oxide particles, silicon nitride particles, silicon carbide particles, etc. The formula of the spraying solution may also be 20wt%-50wt% of silica sol, 50wt%-80wt% of second micron-sized ceramic particles, and 10wt%-20wt% of deionized water, and the second ceramic particles may be silicon oxide particles, aluminum oxide particles, silicon nitride particles, silicon carbide particles, etc.

[0061] When the protective coating 2 is a silicon nitride coating, the saturation process may be: performing a deposition treatment on the inner wall of the furnace body 1 , introducing silane and ammonia gas for saturation, and depositing a silicon nitride film on the inner wall of the furnace body 1 .

[0062] The method for preparing the thin film deposition furnace tube may be:

[0063] 1) A furnace body 1 is provided.

[0064] 2) The inner wall of the furnace body 1 is roughened to form a plurality of first recessed structures 11. After the roughening treatment, the surface roughness R of the inner wall of the furnace body 1 is a The roughening treatment may be a frosting treatment or an etching treatment.

[0065] 3) Cleaning the inner wall of the furnace body 1. The furnace body 1 after the roughening treatment can be cleaned by water washing.

[0066] 4) The inner wall of the furnace body 1 is subjected to coating treatment to form a protective coating 2 .

[0067] The coating treatment may be performed by spraying. During the spraying treatment, a spray gun is first used to evenly spray the spray solution on the inner wall of the furnace body 1, and then a hot air gun is used to dry it.

[0068] A preparation process of the spray solution may be: providing a nano-scale aluminum oxide dispersion and a micron-scale first ceramic particle; mixing the aluminum oxide dispersion and the first ceramic particle into a mixed solution; using ultrasonic stirring for a first preset time to homogenize the mixed solution; and then using ultrasonic stirring for a second preset time. The first preset time may be 5 minutes to 10 minutes, and the second preset time may be 5 minutes to 30 minutes.

[0069] Another preparation process of the spray solution may be: providing silica sol and micron-sized second ceramic particles; mixing the silica sol and the second ceramic particles into a mixed solution; using ultrasonic stirring for a first preset time to homogenize the mixed solution; and then using ultrasonic stirring for a second preset time.

[0070] During the use of the thin film deposition furnace tube, it can be periodically cleaned according to the actual performance. The method for cleaning the silicon film deposited on the inner wall of the thin film deposition furnace tube can be: first remove the thin film deposition furnace tube from the chemical vapor deposition equipment, then use acid or alkali washing to corrode the inner wall of the thin film deposition furnace tube, then rinse with a large amount of deionized water, and then dry it.

[0071] Referring to Table 1, after comparing the thin film deposition furnace tube provided by the embodiment of the utility model with the traditional furnace tube through practical tests, it is found that its service life is extended from the traditional 400 rounds of process to 600 rounds of process, and the service life of the furnace tube is significantly improved. Among them, No. 3 in Table 1 is a furnace tube made of quartz glass in this solution, and the service life of 600 rounds of process refers to the total duration of 600 low-pressure chemical vapor deposition processes, and the process effect refers to the effect of the silicon film layer deposited on the silicon wafer.

[0072] Table 1

[0073] Serial number Furnace tube structure Service life Process Effect 1 The inner wall of the quartz furnace tube is smooth 400 rounds of craft good 2 The inner wall of the quartz furnace tube is rough 500 rounds of craft good 3 The inner wall of the thin film deposition furnace tube is rough surface + protective coating 600 rounds of craft good

[0074] In the second aspect, the embodiment of the utility model further discloses a chemical vapor deposition device, including any of the above-mentioned thin film deposition furnace tubes. The chemical vapor deposition device is specifically a low-pressure chemical vapor deposition device, which is used to deposit silicon oxide, polycrystalline silicon, amorphous silicon, etc. during the preparation of battery cells. Since the chemical vapor deposition device includes the above-mentioned thin film deposition furnace tube, it also has the beneficial effects of the above-mentioned thin film deposition furnace tube, which will not be repeated here.

[0075] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0076] The embodiments of the utility model are described above in conjunction with the accompanying drawings, but the utility model is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the enlightenment of the utility model, ordinary technicians in this field can also make many forms without departing from the scope of protection of the utility model and the claims, which all fall within the protection of the utility model.

Claims

1. A thin film deposition furnace tube, characterized in that: include: A furnace body, wherein the inner wall of the furnace body has a plurality of discrete first concave structures; The protective coating is arranged on the inner wall of the furnace body. In the direction away from the inner wall of the furnace body, the protective coating is formed with a plurality of second recessed structures corresponding to the plurality of first recessed structures.

2. The thin film deposition furnace tube according to claim 1, characterized in that: The surface roughness R of the inner wall of the furnace body a Larger than 0.1 micron.

3. The thin film deposition furnace tube according to claim 1 or 2, characterized in that: The surface roughness R of the inner wall of the furnace body a Less than 10 microns - 100 microns.

4. The thin film deposition furnace tube according to claim 1 or 2, characterized in that: The thickness of the protective coating is less than the surface roughness R of the inner wall of the furnace body. a and / or, The thickness of the protective coating is less than the depth of the first recessed structure; and / or, Along the axial direction of the furnace body, the maximum size of the first recessed structure is greater than or equal to the depth of the first recessed structure.

5. The thin film deposition furnace tube according to claim 1, characterized in that: The furnace body includes a main body and a furnace mouth and a furnace tail connected at both ends of the main body, and the density of the first concave structure at the inner wall of the furnace mouth and the inner wall of the furnace tail is greater than the density of the first concave structure at the inner wall of the main body.

6. The thin film deposition furnace tube according to claim 1, characterized in that: Along the axial direction of the furnace body, the minimum distance between two adjacent first recessed structures is greater than the difference between the depth of the first recessed structure and the thickness of the protective coating.

7. The thin film deposition furnace tube according to claim 1, characterized in that: The inner wall of the furnace body further includes a flattened portion connecting a plurality of the first recessed structures, and the ratio of the surface area of ​​the flattened portion to the inner circumference area of ​​the furnace body is 0.1-0.

3.

8. The thin film deposition furnace tube according to claim 1, characterized in that: The thickness of the protective coating is 10 micrometers to 100 micrometers.

9. The thin film deposition furnace tube according to claim 1, characterized in that: The protective coating is any one of an aluminum oxide coating, a silicon oxide coating, a silicon nitride coating, and a silicon carbide coating; The furnace body is any one of a quartz glass furnace body, a silicon carbide furnace body, a high-temperature alloy furnace body, a stainless steel furnace body, and a zirconium oxide furnace body.

10. A chemical vapor deposition device, characterized in that: A thin film deposition furnace tube comprising any one of claims 1 to 9.