Polycrystalline silicon power supply

Abstract

The utility model relates to the technical field of polycrystalline silicon, and aims to provide a polycrystalline silicon power supply. The polycrystalline silicon power supply is convenient to disassemble, assemble and maintain, high in rectification efficiency and low in energy consumption. The polycrystalline silicon power supply comprises a cabinet, a rectification assembly and a control assembly, wherein the rectification assembly and the control assembly are arranged in the cabinet; the rectification assembly comprises a plurality of IGBT modules. The control assembly comprises a main circuit breaker and a plurality of branch circuit breakers, the main circuit breaker is connected with the plurality of branch circuit breakers, and each branch circuit breaker is connected with the input end of one IGBT module. The utility model solves the problems in the prior art that the silicon controlled rectifier is adopted by the polycrystalline silicon power supply for rectification, the silicon controlled rectifier is inconvenient to disassemble and maintain later, the rectification efficiency of the silicon controlled rectifier is low, and the energy consumption is high.

Description

Technical Field

[0001] The utility model relates to the technical field of polysilicon, in particular to a polysilicon power supply. Background Art

[0002] Polysilicon power supply, also known as polysilicon reduction furnace heating power supply, is a device for producing polysilicon materials. Currently, polysilicon power supplies on the market use thyristors for rectification. Silicon controlled rectifiers (SCR), also known as thyristors, are high-power electrical components. In automatic control systems, they can be used as high-power drive devices to control high-power devices with low-power controls. Figure 1 The figure shows the installation diagram of the existing thyristor. The thyristors are installed from top to bottom on both sides of the water-permeable aluminum bar inside the power cabinet and fixed by pressing blocks. Due to the limited space inside the cabinet, this part of the structure needs to be removed as a whole during later disassembly and maintenance, and then repaired outside the cabinet, which is very inconvenient to operate. In addition, the rectification efficiency of the thyristor itself is relatively low and the energy consumption is high. Utility Model Content

[0003] Therefore, the technical problem to be solved by the present invention is to overcome the defects of the polycrystalline silicon power supply in the prior art that the thyristor is used for rectification, which is not convenient for the later disassembly and maintenance of the thyristor, and the thyristor has low rectification efficiency and high energy consumption, thereby providing a polycrystalline silicon power supply that is easy to disassemble and maintain, has high rectification efficiency and low energy consumption.

[0004] In order to solve the above problems, the utility model provides a polysilicon power supply, comprising:

[0005] Cabinets;

[0006] A rectifier assembly is arranged in the cabinet and includes a plurality of IGBT modules;

[0007] The control component is arranged in the cabinet, and comprises: a main circuit breaker and a plurality of sub-circuit breakers, wherein the main circuit breaker is connected to the plurality of sub-circuit breakers, and each sub-circuit breaker is connected to an input end of one of the IGBT modules.

[0008] Optionally, the IGBT module includes: a chassis, a rectifier unit, an IGBT inverter unit and a control element, the rectifier unit, the IGBT inverter unit and the control element are arranged in the chassis, the rectifier unit and the IGBT inverter unit are connected, and the IGBT inverter unit is connected to the control element.

[0009] Optionally, a handle is provided on the outer side of the chassis.

[0010] Optionally, a mounting frame is provided in the cabinet, and the plurality of IGBT modules are arranged on the mounting frame.

[0011] Optionally, four columns of module groups are arranged in the cabinet along the length direction of the cabinet, the two middle columns of module groups each have four IGBT modules arranged in the height direction of the cabinet, one of the columns of module groups on both sides has three IGBT modules arranged in the height direction of the cabinet, and the other column of module groups has six IGBT modules arranged in the height direction of the cabinet.

[0012] Optionally, fuses are provided at both the positive and negative electrodes of the output end of the IGBT module.

[0013] Optionally, a connecting component is provided in the cabinet, and the connecting component includes a first copper bar arranged along the height direction of the cabinet and a second copper bar arranged along the length direction of the cabinet, two first copper bars are arranged in each column of module groups, and the fuse arranged at the positive pole of the output end of each IGBT module in the same column of the module group is arranged on one of the first copper bars, and the fuse arranged at the negative pole of the output end of each IGBT module is arranged on another first copper bar, and the second copper bar is connected to the first copper bar.

[0014] Optionally, the polysilicon power supply further includes a vacuum circuit breaker disposed in the cabinet, and the vacuum circuit breaker is located above the module group in which the three IGBT modules are disposed.

[0015] Optionally, the main circuit breaker is located above the module group in which the three IGBT modules are arranged.

[0016] Optionally, the control component further includes a control unit, and the control unit is located above the module group provided with the four IGBT modules.

[0017] The utility model has the following advantages:

[0018] 1. The polysilicon power supply provided by the utility model includes: a cabinet and a rectifier component and a control component arranged in the cabinet. The rectifier component includes a plurality of IGBT modules, an IGBT (Insulated Gate Bipolar Transistor) module, that is, an insulated gate bipolar transistor module, which can be used for rectification, and compared with thyristors, the IGBT module has higher rectification efficiency and lower energy consumption. The control component includes: a main circuit breaker and a plurality of sub-circuit breakers, the main circuit breaker is connected to a plurality of sub-circuit breakers, and each sub-circuit breaker is connected to the input end of an IGBT module. The sub-circuit breakers and IGBT modules are one-to-one corresponding, and each IGBT module can be controlled to be on and off individually. Therefore, during later maintenance, only the faulty IGBT module can be disassembled and repaired, and other IGBT modules can continue to work normally, which is more convenient for maintenance work.

[0019] 2. The polysilicon power supply provided by the utility model, the IGBT module includes: a chassis, a rectifier unit, an IGBT inverter unit and a control element. The rectifier unit converts the three-phase AC power into variable-frequency AC power output through a three-level circuit of the IGBT inverter unit after bridge rectification. The control element is arranged in the chassis, and the control element can control the IGBT inverter unit to output according to the set requirements. The rectification efficiency of the IGBT module is higher than that of the thyristor in the prior art, and the energy consumption is lower.

[0020] 3. The polysilicon power supply provided by the utility model has a handle on the outside of the chassis to facilitate pulling out the IGBT module during later maintenance work.

[0021] 4. The polysilicon power supply provided by the utility model further includes a vacuum circuit breaker arranged in the cabinet, and the vacuum circuit breaker is located above the module group in which three IGBT modules are arranged. The vacuum circuit breaker can play the role of arc isolation protection and ensure the safety of electricity use in the cabinet.

[0022] 5. In the polysilicon power supply provided by the utility model, the positive and negative electrodes of the output end of the IGBT module are both provided with fuses, which can protect the IGBT module and prevent the IGBT module from short-circuiting and burning.

[0023] 6. The polysilicon power supply provided by the utility model has a connection assembly arranged in the cabinet, the connection assembly includes a first copper bar arranged along the height direction of the cabinet and a second copper bar arranged along the length direction of the cabinet, a first copper bar is arranged at each column of module groups, the fuses arranged at the output end of each IGBT module in the same column of module groups are arranged on the first copper bar, and the second copper bar is connected to the first copper bar. All fuse connections are aggregated by the first copper bar and the second copper bar, thereby optimizing the internal layout of the cabinet. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the specific implementation methods of the utility model or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0025] Figure 1 The schematic diagram of the installation of the thyristor in the polysilicon power supply in the prior art;

[0026] Figure 2 It is a schematic diagram of the polysilicon power supply of the utility model;

[0027] Figure 3 It is a schematic diagram of the other side of the polysilicon power supply of the utility model;

[0028] Figure 4 This is a schematic diagram of the arrangement of the IGBT module in the polysilicon power supply of the utility model;

[0029] Figure 5 This is a schematic diagram of an IGBT module in a polysilicon power supply of the utility model;

[0030] Figure 6 It is a schematic diagram of the control element of the IGBT module in the polysilicon power supply of the utility model.

[0031] Description of reference numerals:

[0032] 11. Silicon controlled rectifier, 12. Aluminum busbar for water flow, 13. Press block;

[0033] 2. Cabinet, 201, mounting frame;

[0034] 3. IGBT module, 301. chassis, 302. rectifier unit, 303. IGBT inverter unit, 304. control element, 305. handle;

[0035] 401. main circuit breaker, 402. branch circuit breaker, 403. fuse, 404. vacuum circuit breaker, 405. control unit;

[0036] 501, the first copper bar, 502, the second copper bar. DETAILED DESCRIPTION

[0037] The technical solution of the utility model will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0038] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0039] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0040] In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0041] like Figures 2 to 5 As shown, this is a preferred embodiment of the polysilicon power supply of the utility model. This polysilicon power supply can be used to produce polysilicon materials, and compared with the existing polysilicon power supply using thyristor 11 rectification, it is easier to disassemble and repair, and has higher rectification efficiency and lower energy consumption.

[0042] The above-mentioned polysilicon power supply includes: a cabinet 2, a rectifier component and a control component. The cabinet 2 is placed on the ground, and the cabinet 2 is provided with a detachable or push-pull cabinet door, and there is an installation space inside to set the rectifier component and the control component. The rectifier component includes a plurality of IGBT (Insulated Gate Bipolar Transistor) modules, which are responsible for the rectification of the power supply. The rectification efficiency of the IGBT module 3 is about 97%, while the rectification efficiency of the thyristor 11 is about 90%. Obviously, the rectification efficiency of the IGBT module 3 is higher and the energy consumption is lower. The control component includes: a main circuit breaker 401 and a plurality of sub-circuit breakers 402, the main circuit breaker 401 is connected to a plurality of sub-circuit breakers 402, and each sub-circuit breaker 402 is connected to the input end of an IGBT module 3. That is to say, the sub-circuit breaker 402 and the IGBT module 3 are set in a one-to-one correspondence, so that the on and off of each IGBT module 3 can be controlled by a sub-circuit breaker 402. During the later maintenance and replacement, the faulty IGBT module 3 can be maintained separately, and the other IGBT modules 3 can work normally. Therefore, this kind of polysilicon power supply is more convenient to maintain.

[0043] Furthermore, the cabinet 2 has a rectangular shape and is provided with a mounting frame 201 inside, which can install and fix the IGBT module 3. The mounting frame 201 includes a multi-layer frame arranged at intervals along the height direction of the cabinet 2, and each layer of the frame includes a plurality of mounting parts arranged at intervals along the length direction of the cabinet 2. Each mounting part is arranged along the width direction of the cabinet 2, and an IGBT module 3 can be placed on two adjacent mounting parts.

[0044] Specifically, Figure 4 As shown, in this embodiment, a total of nineteen IGBT modules 3 are arranged in the cabinet 2. The nineteen IGBT modules 3 are arranged into four columns of module groups along the length direction of the cabinet 2 in the cabinet 2, and the two middle columns of module groups are each arranged with four IGBT modules 3 spaced apart along the height direction of the cabinet 2. Among the two columns of module groups on both sides, one column of module groups is arranged with three IGBT modules 3 spaced apart along the height direction of the cabinet 2, and the other column of module groups is arranged with six IGBT modules 3 spaced apart along the height direction of the cabinet 2.

[0045] In other embodiments, the number of IGBT modules 3 can be adjusted accordingly according to the power supply demand, the space size of the cabinet 2, and the layout of the components inside the cabinet 2. For example, ten, fifteen, twenty, etc. IGBT modules 3 can be set in the cabinet 2; when setting, the same number of IGBT modules 3 can be arranged in each column of module groups. For example, when twenty IGBT modules 3 are set, four columns of module groups can be set, and five IGBT modules 3 can be set in each column of module groups.

[0046] Further, such as Figure 5 , Figure 6 As shown, the IGBT module 3 includes: a chassis 301, a rectifier unit 302, an IGBT inverter unit 303 and a control element 304, and the chassis 301 is placed on the mounting frame 201 in the cabinet 2. In addition, a handle 305 is provided on the outside of the chassis 301, and the IGBT module 3 can be pulled out from the cabinet 2 along the width direction of the cabinet 2 by pulling the handle 305 during maintenance work, which is convenient and quick.

[0047] The rectifier unit 302, the IGBT inverter unit 303 and the control element 304 are arranged in the chassis 301, and the rectifier unit 302 is connected to the IGBT inverter unit 303, and the IGBT inverter unit 303 is connected to the control element 304. The rectifier unit converts the three-phase AC power into variable-frequency AC power output through the three-level circuit of the IGBT inverter unit after bridge rectification. The control element 304 can control the IGBT inverter unit to output according to the set requirements.

[0048] In addition, if Figure 3 As shown, fuses 403 are provided at both the positive and negative poles of the output end of the IGBT module 3 , that is, two fuses 403 are provided at the output end of each IGBT module 3 to protect the IGBT module 3 .

[0049] Specifically, a connection component is provided in the cabinet 2, and the connection component includes a first copper bar 501 arranged along the height direction of the cabinet 2 and a second copper bar 502 arranged along the length direction of the cabinet 2. Two first copper bars 501 are arranged at each column of module groups. The fuse 403 arranged at the positive pole of the output end of each IGBT module 3 in the same column of module groups is arranged on one of the first copper bars 501, and the fuse 403 arranged at the negative pole of the output end of each IGBT module 3 is arranged on another first copper bar 501. The second copper bar 502 is arranged vertically with the first copper bar 501 to connect the first copper bars 501 at each column of module groups together.

[0050] A vacuum circuit breaker 404 is also provided in the cabinet 2, and the vacuum circuit breaker 404 is located above the module group where three IGBT modules 3 are provided. The second copper bus 502 is electrically connected to the vacuum circuit breaker 404, and the vacuum circuit breaker 404 plays a role of arc isolation protection.

[0051] The main circuit breaker 401 in the control assembly is located above the module group where three IGBT modules 3 are arranged, and is spaced apart from the vacuum circuit breaker 404 along the width direction of the cabinet 2. The main circuit breaker 401 controls the on and off of the entire power supply.

[0052] A corresponding disconnecting circuit breaker 402 is provided on one side of each IGBT module 3 , and the disconnecting circuit breaker 402 is used to control the on and off of the IGBT module 3 .

[0053] The control component also includes a control unit 405, which is located above the module group provided with four IGBT modules 3. The control unit 405 is used to receive monitoring instructions and control and manage the work of each IGBT module 3 and the power supply system according to the requirements of the monitoring instructions.

[0054] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention.

Claims

1. A polysilicon power supply, characterized in that: include: Cabinet (2); A rectifier assembly, arranged in the cabinet (2), comprising a plurality of IGBT modules (3); A control component is arranged in the cabinet (2), comprising: a main circuit breaker (401) and a plurality of sub-circuit breakers (402), wherein the main circuit breaker (401) is connected to the plurality of sub-circuit breakers (402), and each sub-circuit breaker (402) is connected to an input end of one of the IGBT modules (3).

2. The polysilicon power supply according to claim 1, characterized in that: The IGBT module (3) comprises: a chassis (301), a rectifier unit (302), an IGBT inverter unit (303) and a control element (304); the rectifier unit (302), the IGBT inverter unit (303) and the control element (304) are arranged in the chassis (301), the rectifier unit (302) and the IGBT inverter unit (303) are connected, and the IGBT inverter unit (303) is connected to the control element (304).

3. The polysilicon power supply according to claim 2, characterized in that: A handle (305) is provided on the outer side of the chassis (301).

4. The polysilicon power supply according to claim 1, characterized in that: A mounting frame (201) is arranged in the cabinet (2), and a plurality of IGBT modules (3) are arranged on the mounting frame (201).

5. The polysilicon power supply according to claim 1, characterized in that: Four columns of module groups are arranged at intervals in the cabinet (2) along the length direction of the cabinet (2); the two middle columns of module groups each have four IGBT modules (3) arranged at intervals in the height direction of the cabinet (2); one of the columns of module groups on both sides has three IGBT modules (3) arranged at intervals in the height direction of the cabinet (2); and the other column of module groups has six IGBT modules (3) arranged at intervals in the height direction of the cabinet (2).

6. The polysilicon power supply according to claim 5, characterized in that: The positive electrode and the negative electrode of the output end of the IGBT module (3) are both provided with fuses (403).

7. The polysilicon power supply according to claim 6, characterized in that: A connection assembly is provided in the cabinet (2), the connection assembly comprising a first copper bar (501) provided along the height direction of the cabinet (2) and a second copper bar (502) provided along the length direction of the cabinet (2), two first copper bars (501) being provided at each column of module groups, the fuse (403) provided at the positive pole of the output end of each IGBT module (3) in the same column of module groups being provided on one of the first copper bars (501), the fuse (403) provided at the negative pole of the output end of each IGBT module (3) being provided on another of the first copper bars (501), and the second copper bar (502) being connected to the first copper bar (501).

8. The polysilicon power supply according to claim 5, characterized in that: It also includes a vacuum circuit breaker (404) arranged in the cabinet (2), and the vacuum circuit breaker (404) is located above the module group in which the three IGBT modules (3) are arranged.

9. The polysilicon power supply according to claim 5, characterized in that: The main circuit breaker (401) is located above the module group in which the three IGBT modules (3) are arranged.

10. The polycrystalline silicon power supply according to claim 5, characterized in that: The control component further comprises a control unit (405), wherein the control unit (405) is located above the module group provided with the four IGBT modules (3).

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