Integrated Pinfin laminated low-inductance power module

Abstract

The utility model discloses an integrated Pinfin laminated low-inductance power module, which relates to the technical field of inductance power modules and comprises an integrated insulating substrate, needle columns, insulating ceramics and the like are integrally formed by the integrated insulating substrate, the needle columns only carry out heat dissipation on the integrated insulating substrate, and the upper surface of the integrated insulating substrate is provided with a plurality of radiating fins. Metal islands are formed through insulating ceramics, different electrical function bases are achieved, and the upper surface of the integrated insulating substrate is connected with a chip. According to the integrated Pinfin laminated low-inductance power module, by using the independent copper-clad insulating substrate and the pin integrated insulating substrate, more space is provided for arrangement of chips and wires, extremely small inductance and a better current sharing condition are realized, and meanwhile, a more direct heat dissipation structure is formed by reducing layer structures, so that the heat dissipation efficiency is improved. And the production cost can be reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of inductance power modules, in particular to an integrated Pinfin laminated low-inductance power module. Background Art

[0002] Power electronics technology occupies a very important position in today's rapidly developing industrial field. As a representative of power electronics technology, power electronics power modules have been widely used in electric vehicles, photovoltaic power generation, wind power generation, industrial frequency conversion and other industries. With the rise of my country's industry, power electronics power modules have a broader market prospect. The existing power electronics power module packaging is large in size and heavy in weight, which does not meet the requirements of high power density and lightweight in the fields of electric vehicles, aerospace, etc. The vigorous development of electric vehicles in recent years has driven the update and iteration of power module packaging technology. The goals pursued by various packaging technologies are higher power density, higher heat dissipation efficiency, higher reliability and lower cost; during use, a Pinfin heat sink is required for heat dissipation.

[0003] The single-sided and double-sided heat dissipation modules widely used in the market have a heat dissipation path that, in terms of structural design, welds or presses the copper-clad insulating substrate with a layout and the Pinfin. Since the copper-clad insulating substrate and solder layer or thermal grease are additionally introduced between the chip and the Pinfin, this design is difficult to further reduce the thermal resistance; at the same time, since the structure restricts the optimization of the layout, the total inductance is too large, which in turn increases the heat generation; in view of this, we propose a stacked low-inductance power module with an integrated Pinfin. Utility Model Content

[0004] In view of the deficiencies of the prior art, the utility model provides an integrated Pinfin stacked low inductance power module, which solves the problems mentioned in the above background technology.

[0005] To achieve the above objectives, the utility model is implemented through the following technical solutions: an integrated Pinfin stacked low inductance power module, including an integrated insulating substrate, the integrated insulating substrate is welded on a pin column, the pin column dissipates heat for the integrated insulating substrate, a chip is connected to the upper surface of the integrated insulating substrate, the upper bridge arm chip controls the power of the module, a copper-clad insulating substrate lower conductive layer 1 is fixed on the side wall of one side of the integrated insulating substrate, a copper-clad insulating substrate lower conductive layer 2 is also fixed on the side wall of the integrated insulating substrate, and the copper-clad insulating substrate lower conductive layer 1 and the copper-clad insulating substrate lower conductive layer 2 are electrically connected.

[0006] Optionally, the upper surface of the integrated insulating substrate is partially interconnected with both the upper conductive layer of the copper-clad insulating substrate and the lower conductive layer of the copper-clad insulating substrate.

[0007] Optionally, an upper conductive layer of a copper-clad insulating substrate is fixed on the side wall of the integrated insulating substrate, and the second lower conductive layer of the copper-clad insulating substrate is electrically connected to the upper conductive layer of the copper-clad insulating substrate.

[0008] Optionally, an N connection terminal and a P connection terminal are fixed on the side wall of the integrated insulating substrate.

[0009] Optionally, an AC connection terminal is electrically connected to the lower conductive layer of the copper-clad insulating substrate.

[0010] The utility model provides an integrated Pinfin laminated low inductance power module, which has the following beneficial effects:

[0011] The integrated Pinfin stacked low inductance power module provides more space for the layout of chips and traces by using a separate copper-clad insulating substrate and a Pinfin integrated insulating substrate, thereby achieving extremely small inductance and better current sharing. It also forms a more direct heat dissipation structure by reducing the layer structure, which is conducive to reducing production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a schematic diagram of the structure of the utility model device from the front;

[0013] Figure 2 This is a schematic diagram of the explosion structure of the utility model device;

[0014] Figure 3 It is a schematic diagram of the structure of the device of the utility model from a top view.

[0015] In the figure: 1. P connection terminal; 2. integrated insulating substrate; 3. chip; 4. lower conductive layer 1 of copper-clad insulating substrate; 5. AC connection terminal; 6. lower conductive layer 2 of copper-clad insulating substrate; 7. upper and lower copper layer connectors of copper-clad insulating substrate; 71. circular conductive block; 8. upper conductive layer of copper-clad insulating substrate; 9. N connection terminal; 10. needle column. DETAILED DESCRIPTION

[0016] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0017] See also Figure 1-Figure 3The utility model provides a technical solution: an integrated Pinfin stacked low inductance power module, including an integrated insulating substrate 2, the integrated insulating substrate 2 uses ceramic as an insulating carrier, and forms a layout through a metal island on the upper surface; the integrated insulating substrate 2 is welded and integrally formed with a pin column 10, the pin column 10 dissipates heat for the integrated insulating substrate 2, and a chip 3 is connected to the upper surface of the integrated insulating substrate 2, and a copper-clad insulating substrate lower conductive layer 4 is fixed on the side wall of one side of the integrated insulating substrate 2.

[0018] In this embodiment, a copper-clad insulating substrate upper conductive layer 8 is fixed on the side wall of the integrated insulating substrate 2; an N connection terminal 9 and a P connection terminal 1 are fixed on the side wall of the integrated insulating substrate 2, and the copper-clad insulating substrate lower conductive layer 2 6 is electrically connected to the copper-clad insulating substrate upper conductive layer 8.

[0019] It is worth noting that the lower conductive layer 1 4 of the copper-clad insulating substrate is electrically connected to an AC connection terminal 5 , and the AC connection terminal 5 is electrically connected to a lower bridge arm chip, which distributes the current power on the AC connection terminal 5 .

[0020] In addition, the upper bridge arm chip and the lower bridge arm chip are respectively fixed to the lower conductive layer 1 4 of the copper-clad insulating substrate and the lower conductive layer 2 6 of the copper-clad insulating substrate by using silver sintering, copper sintering and brazing.

[0021] Among them, the gate loop is distributed on the copper-clad insulating substrate, and the low inductance of the gate loop is achieved by mirror-stacking the G-pole loop and the Kelvin loop.

[0022] In this embodiment, Figure 2 As shown, the upper and lower copper layer connectors 7 of the copper-clad insulating substrate are made of insulating material, and a circular conductive block 71 for current to pass through is provided on the side wall of the upper and lower copper layer connectors 7 of the copper-clad insulating substrate, and the lower conductive layer 6 of the copper-clad insulating substrate and the upper conductive layer 8 of the copper-clad insulating substrate are both electrically connected to the circular conductive block 71 on the upper and lower copper layer connectors 7 of the copper-clad insulating substrate to achieve electrical connection.

[0023] As an application of this embodiment:

[0024] The utility model provides more space for the arrangement of chips and wiring by using a separate copper-clad insulating substrate and an integrated insulating substrate 2, thereby achieving extremely small inductance and better current sharing, and also forms a more direct heat dissipation structure by reducing the layer structure, which is conducive to reducing production costs.

[0025] In the power module of this embodiment, the current is introduced from the P connection terminal 1, flows into the lower conductive layer 1 4 of the copper-clad insulating substrate through the upper bridge arm chip 3 on the left, and then reaches the right AC connection terminal 5 through the lower conductive layer 1 4 of the copper-clad insulating substrate; when the current flows in the reverse direction, it first flows from the AC connection terminal 5 through the upper bridge arm chip 3 on the right, flows into the lower conductive layer 2 6 of the copper-clad insulating substrate, and then passes through the circular conductive block 71 to reach the upper conductive layer 8 of the copper-clad insulating substrate, and then the upper conductive layer 8 of the copper-clad insulating substrate passes through the integrated insulating substrate 2 and flows out to the N connection terminal 9, completing the flow of current.

[0026] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. An integrated Pinfin stacked low inductance power module, characterized in that: The invention comprises an integrated insulating substrate (2), wherein the integrated insulating substrate (2) and a needle column (10) are integrally formed, the needle column (10) dissipates heat for the integrated insulating substrate (2), a chip (3) is connected to the upper surface of the integrated insulating substrate (2), a copper-clad insulating substrate lower conductive layer 1 (4) is fixed on a side wall of one side of the integrated insulating substrate (2), and a copper-clad insulating substrate lower conductive layer 2 (6) is also fixed on the side wall of the integrated insulating substrate (2), and the copper-clad insulating substrate lower conductive layer 1 (4) and the copper-clad insulating substrate lower conductive layer 2 (6) are electrically connected to the upper bridge arm chip (3) and the lower bridge arm chip, respectively.

2. The integrated Pinfin stacked low inductance power module according to claim 1, characterized in that: The upper surface of the integrated insulating substrate (2) is partially interconnected with the upper conductive layer (8) of the copper-clad insulating substrate and the lower conductive layer (4) of the copper-clad insulating substrate.

3. The integrated Pinfin stacked low inductance power module according to claim 2, characterized in that: A copper-clad insulating substrate upper conductive layer (8) is fixed on the side wall of the integrated insulating substrate (2), and the copper-clad insulating substrate lower conductive layer 2 (6) is electrically connected to the copper-clad insulating substrate upper conductive layer (8).

4. The integrated Pinfin stacked low inductance power module according to claim 1, characterized in that: An N connection terminal (9) and a P connection terminal (1) are fixed on the side wall of the integrated insulating substrate (2).

5. The integrated Pinfin stacked low inductance power module according to claim 2, characterized in that: The lower conductive layer 1 (4) of the copper-clad insulating substrate is electrically connected to the AC connection terminal (5).

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