Silicon substrate structure of nano gas sensor

By arranging multiple protruding parts and bumps distributed in a matrix on the silicon base structure of the nano gas sensor, the problem of low sensitivity and precision of the existing gas sensor base material is solved, achieving higher sensitivity and longer The service life of the gas alarm is enhanced and the safety performance of the gas alarm is enhanced.

CN222379628UActive Publication Date: 2025-01-21SUZHOU ZHONGXIN MICRO NANO SENSOR TECH CO LTD
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Patent Information

Application Number
CN202420482862.1
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-03-13
Publication Date
2025-01-21
Estimated Expiration
2034-03-13

AI Technical Summary

Technical Problem

The ceramic substrate materials of existing gas-sensitive sensors have low sensitivity and accuracy, and slow sensing speed, which may cause false alarms or missed alarms, causing safety hazards.

Method used

The silicon base structure of the nano gas sensor is used. By setting multiple protruding parts distributed in a matrix on the base layer and setting bumps on its outer surface, the wrapping area and contact area of ​​the gas sensing material layer are increased, thereby improving the gas flow rate. sensitivity and service life of the sensor.

Benefits of technology

It effectively improves the sensitivity and accuracy of the gas sensor, reduces the occurrence of false alarms and missed alarms, extends the detection service life, and enhances the safety performance of the gas alarm.

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Abstract

The utility model discloses a silicon substrate structure of a nanometer gas sensitive sensor, which relates to the technical field of nanometer gas sensitive sensors, and comprises a substrate layer, a plurality of protruding parts are arranged on the upper surface of the substrate layer, the protruding parts are distributed in a matrix shape, salient points are arranged on the outer surfaces of the protruding parts, and the convex points are arranged on the upper surface of the substrate layer. The protruding part is in a halfpace shape, the area of the end, close to the base layer, of the protruding part is large, a cavity is formed in the bottom of the base layer, the cavity is in a halfpace shape, and the area of the bottom end of the cavity is large. According to the silicon substrate structure of the nano gas sensor, the plurality of convex parts are arranged on the substrate layer and are distributed in the matrix shape, so that the wrapping area of the gas-sensitive material layer can be effectively increased, the gas-sensitive material amount on the unit area of the silicon substrate structure is improved, the gas molecule adsorbability and the collection rate are further improved, and the sensitivity of the gas sensor is improved.
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Description

Technical Field

[0001] The utility model relates to the technical field of nano gas sensitive sensors, in particular to a silicon substrate structure of a nano gas sensitive sensor. Background Art

[0002] The gas alarm can detect the concentration of combustible gas in the area. It is installed in places where gas leaks may occur. It generates electric current through chemical reactions to detect the gas in the air. At the same time, it also responds to the gas content in the air to a certain extent. After detecting the concentration of gas in the air, it can display the value on the host or client through communication software technology. It can also alarm the client after reaching the threshold concentration and close the gas valve to prevent gas poisoning. Household gas alarms can effectively avoid safety accidents such as explosions, fires, and poisoning caused by gas leaks. They have been widely used in most countries and regions. The gas alarm consists of a detector and an alarm control host. The detector can be a gas sensor, which is a sensor used to detect gas concentration and composition.

[0003] The gas sensors in the prior art are usually made of ceramic as the base material, which has the defects of low sensitivity and accuracy and slow sensing speed. When used in gas alarms, false alarms or missed alarms may occur, posing a safety hazard.

[0004] Therefore, it is necessary to propose a new silicon substrate structure for nano gas sensors to solve the above problems. Utility Model Content

[0005] The purpose of the utility model is to provide a silicon substrate structure of a nano gas sensor to solve the problem that the gas sensors in the prior art, whose substrate materials are usually made of ceramics, have low sensitivity and accuracy and slow sensing speed, and when used in gas alarms, may cause false alarms or missed alarms, posing a safety hazard.

[0006] To achieve the above-mentioned purpose, the utility model provides the following technical solution: a silicon substrate structure of a nano gas sensor, comprising a substrate layer, the upper surface of the substrate layer is provided with a protruding portion, the protruding portion is provided in plurality, the plurality of protruding portions are distributed in a matrix, and the outer surface of the protruding portion is provided with bumps.

[0007] Preferably, the protruding portion is terraced, and has a larger area near one end of the base layer.

[0008] Preferably, the protruding portion is in the shape of a truncated cone, and has a larger area near one end of the base layer.

[0009] Preferably, the protruding portion and the base layer are formed in one piece.

[0010] Preferably, the protruding points and the protruding parts are formed in one piece.

[0011] Preferably, a cavity is provided at the bottom of the base layer, the cavity is in a step-like shape, and the area of ​​the bottom end of the cavity is large.

[0012] The beneficial technical effects of the utility model are as follows: a plurality of protrusions are arranged on the base layer and are distributed in a matrix shape, which can effectively increase the wrapping area of ​​the gas-sensitive material layer, increase the amount of gas-sensitive material per unit area of ​​the silicon base structure, and thus increase the adsorption and collection rate of gas molecules, thereby improving the sensitivity of the gas sensor;

[0013] The utility model arranges convex points on the outer surface of the protruding part, which can increase the contact area between the gas sensitive material layer and the protruding part, and makes the outer peripheral surface of the protruding part a concave-convex structure, which makes it less likely for the gas sensitive material to fall off, thereby extending the service life of the gas sensor detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a schematic structural diagram of Example 1 of the silicon substrate structure of the nano gas sensor of the utility model.

[0015] Figure 2 This is a schematic diagram of the base layer and cavity structure of the utility model.

[0016] Figure 3 This is a schematic structural diagram of Example 2 of the silicon substrate structure of the nano gas sensor of the utility model.

[0017] Figure 4 This is a schematic diagram of the base layer and cavity structure of the utility model.

[0018] In the figure: 1, base layer; 2, protruding part; 3, convex point; 4, cavity. DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0020] like Figure 1-Figure 4As shown, the utility model provides a silicon substrate structure of a nano gas sensor, including a substrate layer 1. A protruding portion 2 is provided on the upper surface of the substrate layer 1, and the protruding portion 2 and the substrate layer 1 are formed by an integral molding process, and the substrate layer 1 and the protruding portion 2 are both made of silicon nanomaterials. When used specifically, the upper surface of the substrate layer 1 and the surface of the protruding portion 2 are both wrapped with a gas-sensitive material layer, and an interdigitated electrode is prepared on the surface of the gas-sensitive material layer.

[0021] The protrusions 2 are arranged in a plurality and are distributed in a matrix. The plurality of protrusions 2 are arranged on the base layer 1 and are distributed in a matrix, which can effectively increase the wrapping area of ​​the gas-sensitive material layer, increase the amount of gas-sensitive material per unit area of ​​the silicon base structure, and thus increase the adsorption and collection rate of gas molecules, thereby improving the sensitivity of the gas sensor.

[0022] Considering that the gas-sensitive material is prone to fall off after long-term use, resulting in a decrease in the accuracy of detection, the outer surface of the protruding portion 2 is provided with a convex point 3, and the convex point 3 and the protruding portion 2 are formed by an integral molding process. The convex point 3 is provided to increase the contact area between the gas-sensitive material layer and the protruding portion 2, and the outer peripheral surface of the protruding portion 2 is a concave-convex structure, which makes it less likely for the gas-sensitive material to fall off, thereby extending the service life of the gas sensor detection.

[0023] Example 1

[0024] The protrusion 2 is in a terraced shape, and has a large area near one end of the base layer 1. When the protrusion 2 is set in a terraced shape, the gas-sensitive material layer has a bent structure on the side of the protrusion 2, thereby increasing the number of contact surfaces and contact area with the gas-sensitive material layer, which is particularly suitable for nano gas sensors with high sensitivity requirements. The protrusion 2 has a large area near one end of the base layer 1, which can increase the contact area with the base layer 1; at the same time, it is convenient for the gas-sensitive material layer to be evenly wrapped on its outer surface.

[0025] Example 2

[0026] The protrusion 2 is truncated cone-shaped, and has a large area near one end of the base layer 1. The protrusion 2 is set to be truncated cone-shaped, and the gas-sensitive material layer is continuously distributed on the side of the protrusion 2, thereby reducing the transmission path, which is particularly suitable for nano gas sensors with high detection speed requirements. The protrusion 2 has a large area near one end of the base layer 1, which can increase the contact area with the base layer 1; at the same time, it is convenient for the gas-sensitive material layer to be evenly wrapped on its outer surface.

[0027] A cavity 4 is formed at the bottom of the base layer 1 . The cavity 4 is in a step-like shape, and the bottom end of the cavity 4 has a large area.

[0028] A cavity 4 is provided, and a hollow structure is formed at the top of the cavity 4 to communicate with the outside world. It is easy for a person skilled in the art to understand that a through hole connected to the outside world can also be formed at the top of the cavity by other conventional means to ensure that the gas-sensitive material 2 can contact the outside air.

Claims

1. A silicon substrate structure of a nano gas sensor, characterized in that: The invention comprises a base layer (1), wherein the upper surface of the base layer (1) is provided with a protruding portion (2), the protruding portion (2) is provided in plurality, the plurality of protruding portions (2) are distributed in a matrix, and the outer surface of the protruding portion (2) is provided with convex points (3).

2. The silicon substrate structure of the nano gas sensor according to claim 1, characterized in that: The protruding portion (2) is terrace-shaped and has a larger area close to one end of the base layer (1).

3. The silicon substrate structure of the nano gas sensor according to claim 1, characterized in that: The protruding portion (2) is in the shape of a truncated cone and has a larger area close to one end of the base layer (1).

4. The silicon substrate structure of the nano gas sensor according to claim 1, characterized in that: The protruding portion (2) and the base layer (1) are formed in one piece.

5. The silicon substrate structure of the nano gas sensor according to claim 1, characterized in that: The convex point (3) and the protruding portion (2) are formed in one piece.

6. The silicon substrate structure of the nano gas sensor according to claim 1, characterized in that: A cavity (4) is provided at the bottom of the base layer (1); the cavity (4) is in a step-like shape, and the area of ​​the bottom end of the cavity (4) is large.