Semiconductor device having heat dissipation
By arranging a tapered coating layer on the side of the substrate of the semiconductor package, the problem of difficulty in stably positioning the heat sink due to the increase in passive components on the substrate is solved, achieving higher stability and reliability and reducing process costs. .
Patent Information
- Application Number
- CN202421142343.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Priority Date
- 2024-05-07
- Filing Date
- 2024-05-23
- Publication Date
- 2025-01-21
- Estimated Expiration
- 2034-05-23
AI Technical Summary
In the existing semiconductor packages, the area of the heat sink is reduced due to the addition of passive elements on the substrate, making it difficult to stabilize the position and easily fall off, especially under the action of external forces.
Design a semiconductor device with a heat sink. By setting a tapered adhesive layer on the side of the substrate to form a long ladder-like, trapezoidal or triangular pattern, the adhesion and stability of the adhesive layer can be improved and stress can be reduced.
It effectively reduces the stress between the heat sink and the substrate, improves the stability and reliability of the heat sink, reduces the amount of adhesive layer, saves process costs, and does not require changing the shape or size of the heat sink.
Smart Images
Figure CN222380580U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to a semiconductor device, and more particularly to a semiconductor device with a heat sink. Background Art
[0002] A flip chip ball grid array (FCBGA) semiconductor package is a package that has both flip chip and ball grid array, where at least one chip is electrically connected to one surface of a substrate through a plurality of solder bumps, and a plurality of solder balls (Solder Balls) serving as input / output (I / O) terminals are implanted on the other surface of the substrate.
[0003] In order to remove the heat generated by the operation of the chip, the semiconductor package is also provided with a heat sink, which can be attached to the substrate by adhesive, and its area is often larger than the chip area so as to cover and adhere to the chip and effectively dissipate the heat from the chip.
[0004] However, in order to improve the operating performance of the semiconductor package, passive components are added to the substrate, which reduces the area on the substrate that can be used for the heat sink, making it more difficult to firmly attach and position the heat sink on the substrate, which may cause the heat sink to fall off, especially when a large heat sink is used. In addition, when the substrate with the heat sink is subjected to external forces such as vibration or collision, the heat sink may also fall off; or the structure of the heat sink and the substrate bonded by adhesives may easily cause delamination between the heat sink and the substrate due to stress, thus causing the heat sink to fall off.
[0005] Therefore, how to solve the above problems without changing the structure of the heat sink itself (for example, changing the shape or size of the heat sink cannot solve the end customer's demand for placing the semiconductor package into the end product) is an urgent need for the industry to solve. Utility Model Content
[0006] In view of the various deficiencies of the above-mentioned prior art, the present application provides a semiconductor device with a heat sink, comprising: a substrate, a heat sink receiving area is arranged on the side of the substrate; an adhesive layer is arranged on the heat sink receiving area, wherein the adhesive layer on at least one side forms a first pattern, and the width of the first pattern is gradually reduced from the two ends of the side to the center of the side; the heat sink is connected to the substrate through the adhesive layer.
[0007] In the aforementioned semiconductor device with heat sink, the substrate is a carrier or a packaging module.
[0008] In the aforementioned semiconductor device with heat sink, the substrate is combined with electronic components.
[0009] In the aforementioned semiconductor device with heat sink, the first pattern is in the shape of a long staircase, and the width of the long staircase is tapered from the two ends of the side to the center of the side in multiple stages. Alternatively, the first pattern is tapered from the two ends of the side to the center of the side in a trapezoidal or triangular manner.
[0010] In the aforementioned semiconductor device with heat sink, the adhesive layer is provided on the other side opposite to the side to form a second pattern, which is in the shape of a long step, and the width of the long step is gradually reduced in multiple stages from the two ends of the side to the center of the side. Alternatively, the second pattern is gradually reduced in a trapezoidal or triangular shape from the two ends of the other side to the center of the other side.
[0011] In the aforementioned semiconductor device with heat sink, the adhesive layer is provided on two adjacent sides relative to the side and the other side to form a third pattern and a fourth pattern, and the third pattern and the fourth pattern are in the shape of long rectangular strips.
[0012] In the aforementioned semiconductor device with a heat sink, the heat sink includes a heat sink and a support portion connected to the heat sink, wherein the support portion is vertically disposed on the substrate through the adhesive layer.
[0013] As can be seen from the above, in the semiconductor device with a heat sink of the present application, the first pattern is mainly formed by the adhesive layer on at least one side of the substrate, and its width is gradually reduced from the two ends of the side to the center of the side, and further forms an inwardly tapering long stair shape, and the pattern on the other side relative to the side is also a long stair shape that is tapered within the long stair shape, which can effectively reduce stress and improve reliability, and reduce the amount of adhesive layer used to save costs.
[0014] Therefore, compared to the prior art, the structure of the semiconductor device with a heat sink of the present application does not require the addition of new development processes and materials or the purchase of equipment. The existing technical problems in the industry can be solved by adding simple steps to the existing equipment. There will not be a lot of additional costs, and the shape or size of the heat sink will not be changed to meet the end product needs of end customers. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 It is a cross-sectional schematic diagram of a semiconductor device with a heat sink proposed in the present application.
[0016] Figure 2 It is a partial schematic plan view of a semiconductor device with a heat sink proposed in the present application.
[0017] Description of Reference Numerals
[0018] 10. Substrate
[0019] 101 First side
[0020] 102 Second side
[0021] 103 Third side
[0022] 104 Fourth side
[0023] 11 Electronic components
[0024] 12 Adhesive layer
[0025] 121 First Pattern
[0026] 122 Second Pattern
[0027] 123 The third pattern
[0028] 124 The fourth pattern
[0029] 13 Heat sink
[0030] 131 Heat sink
[0031] 132 Support
[0032] 14 Thermal Interface Materials
[0033] 2 Semiconductor devices. DETAILED DESCRIPTION
[0034] The following describes the implementation methods of the present application through specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification.
[0035] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings attached to this specification are only used to match the contents disclosed in the specification for the understanding and reading of those skilled in the art, and are not used to limit the limiting conditions for the implementation of this application, so they have no substantial technical significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size, without affecting the effects and purposes that can be achieved by this application, should still fall within the scope of the technical content disclosed in this application. At the same time, the terms such as "on", "first", "second", "one", etc. cited in this specification are only for the convenience of narration, and are not used to limit the scope of the implementation of this application. The change or adjustment of their relative relationship should also be regarded as the scope of the implementation of this application without substantially changing the technical content.
[0036] Figure 1 and Figure 2 Schematic diagrams of cross section and partial plan view of a semiconductor device 2 with a heat sink proposed in this application.
[0037] like Figure 1 and Figure 2 As shown, a substrate 10 with a rectangular shape and a heat sink placement area is provided. The heat sink placement area is provided on four sides of the substrate 10, and the substrate 10 is combined with an electronic component 11. In one embodiment, the substrate 10 can be a carrier, and the carrier is, for example, a package substrate (substrate) having a core layer and a circuit structure or a circuit structure without a core layer (coreless), which includes forming a circuit layer on a dielectric material, such as a redistribution layer (RDL for short). The carrier can also be other carrier structures that can be used to carry electronic components such as chips, such as a lead frame or a silicon interposer, but is not limited to the above. In another embodiment, the substrate 10 can be a packaging module, which includes a circuit layer, an electronic component, and a packaging layer covering the electronic component. This embodiment and the accompanying drawings are described using the substrate 10 as a carrier.
[0038] In this embodiment, the substrate 10 is a rectangle or a square, and a portion of the substrate 10 near the center is provided with at least one electronic component 11. The electronic component 11 is, for example, an active component, a passive component, or a combination thereof, wherein the active component is a semiconductor chip, and the passive component is a resistor, a capacitor, or an inductor.
[0039] The four sides of the substrate 10 are respectively provided with heat sink receiving areas for attaching heat sinks 13 , which are helpful for removing heat energy generated by active components, passive components or electronic components 11 of a combination of active components, passive components or both on the substrate 10 during operation.
[0040] An adhesive layer 12 is disposed on the heat sink connection area of the substrate 10, so that the heat sink 13 is connected to the substrate 10 through the adhesive layer 12. In this embodiment, the adhesive layer 12 is disposed on the heat sink connection area by, for example, dispensing, wherein the adhesive layer 12 on at least one side (the first side 101) forms a first pattern 121, and the width of the first pattern 121 is gradually reduced from both ends of the side to the center of the side. For example, the material of the adhesive layer 12 is non-conductive glue.
[0041] Furthermore, the adhesive layer 12 of the first side 101 of the substrate 10 is formed with a first pattern 121, and the width of the first pattern 121 is gradually reduced from the two ends of the first side 101 to the center of the first side 101. Different from the existing industry, the pattern after the adhesive is dispensed on the substrate is rectangular on all four sides, which may cause problems such as the heat sink falling off the substrate under the condition of uneven stress. The width of the first pattern 121 on the substrate 10 of the present application is gradually reduced from the two ends to the center, which can effectively reduce the stress generated by the adhesive layer 12 after the cold and hot cycle (the stress generated in the process is mainly concentrated on the side), and can reduce the use of the adhesive layer 12 and save the process cost of the overall semiconductor device 2.
[0042] In the present embodiment, the first pattern 121 is in the shape of a long staircase, and the width of the long staircase is gradually reduced in multiple stages from the two ends of the first side 101 to the center of the first side 101. For example, the width of the long staircase is gradually reduced in three stages from the two ends of the first side 101 to the center of the first side 101. In addition, the width of the long staircase can also be gradually reduced in four or five stages from the two ends of the first side 101 to the center of the first side 101. In other embodiments, the width of the first pattern 121 can also be gradually reduced in a trapezoidal or triangular manner from the two ends of the first side 101 to the center of the first side 101. The shape of the first pattern 121 can be relatively adjusted due to the heat dissipation concentration generated by the electronic components on the substrate 10.
[0043] In the present embodiment, the pattern (third pattern 123 and fourth pattern 124) of the adhesive layer 12 disposed on two adjacent sides (third side 103 and fourth side 104) relative to the first side 101 may be in the shape of a long rectangular strip. In addition, the pattern (second pattern 122) of the adhesive layer 12 disposed on the other side (second side 102) relative to the first side 101 may be the same as the pattern (first pattern 121) of the first side 101, for example, the width of the long step-shaped strip is gradually reduced in three stages from the two ends of the second side 102 to the center of the second side 102. In addition, the width of the long step-shaped strip may also be gradually reduced in four or five stages from the two ends of the second side 102 to the center of the second side 102. In other embodiments, the width of the second pattern 122 may also be gradually reduced in a trapezoidal or triangular manner from the two ends of the second side 102 to the center of the second side. The width of the second pattern 122 can be relatively adjusted according to the heat dissipation concentration of the electronic components on the substrate 10 . In other words, the width of the first pattern 121 can be the same as or different from the width of the second pattern 122 .
[0044] In this embodiment, the heat sink 13 includes a heat sink 131 and a support portion 132 connected to the heat sink 131, wherein the support portion 132 is vertically disposed on the substrate 10 through an adhesive layer 12, and the heat sink 131 is connected to the electronic component 11 through a thermal interface material (TIM) 14 to effectively dissipate the heat generated by the electronic component 11 during operation.
[0045] Therefore, the semiconductor device 2 provided in the present application mainly has a patterned adhesive layer 12 disposed on the side of the substrate 10, wherein the width of the first pattern of the adhesive layer 12 on at least one side (where the stress is the largest) is gradually reduced from the two ends of the side to the center of the side, thereby reducing the stress by reducing the amount of glue. At the same time, the structure of the aforementioned semiconductor device 2 does not require the addition of new development processes and materials or the purchase of machines. The existing technical problems in the industry can be solved by adding simple steps to the existing machines, so there will not be a lot of additional costs, and the shape or size of the heat sink will not be changed to meet the terminal product requirements of end customers.
[0046] The above embodiments are only used to illustrate the principles and effects of the present application, and are not used to limit the present application. Any person skilled in the art may modify the above embodiments without violating the spirit and scope of the present application. Therefore, the scope of protection of the present application should be as listed in the claims.
Claims
1. A semiconductor device having a heat sink, characterized in that: include: The substrate has a heat sink receiving area disposed on its side; An adhesive layer is disposed on the heat sink receiving area, wherein the adhesive layer on at least one side forms a first pattern, and the width of the first pattern gradually decreases from both ends of the side to the center of the side; and The heat dissipation component is connected to the substrate through the adhesive layer.
2. The semiconductor device with a heat sink according to claim 1, wherein: The substrate is a carrier or a packaging module.
3. The semiconductor device with a heat sink according to claim 1, wherein: The substrate is bonded with electronic components.
4. The semiconductor device with a heat sink according to claim 1, wherein: The first pattern is in the shape of a long staircase, and the width of the long staircase is gradually reduced in multiple stages from the two ends of the side to the center of the side.
5. The semiconductor device with a heat sink according to claim 1, wherein: The first pattern is in a shape that tapers from both ends of the side toward the center of the side in a trapezoidal or triangular manner.
6. The semiconductor device with a heat sink according to claim 1, wherein: The adhesive layer is disposed on another side opposite to the side to form a second pattern, and the width of the second pattern is gradually reduced from two ends of the other side to the center of the other side.
7. The semiconductor device with a heat sink according to claim 6, wherein: The second pattern is in the shape of a long staircase, and the width of the long staircase is gradually reduced in multiple stages from the two ends of the side to the center of the side.
8. The semiconductor device with a heat sink according to claim 6, wherein: The adhesive layer is arranged on two adjacent sides relative to the side and the other side to form a third pattern and a fourth pattern, and the third pattern and the fourth pattern are in the shape of long rectangular strips.
9. The semiconductor device with a heat sink according to claim 6, wherein: The second pattern is in a shape that tapers from both ends of the other side toward the center of the other side in a trapezoidal or triangular manner.
10. The semiconductor device with a heat sink according to claim 1, wherein: The heat dissipation element includes a heat dissipation sheet and a support portion connected to the heat dissipation sheet. The support portion is vertically arranged on the substrate through the adhesive layer.