Furnace tube equipment

Abstract

The utility model provides furnace tube equipment which comprises a wafer storage and transmission area, an FIMS device and a loading transition area, and wafers in the wafer storage and transmission area are transmitted to the loading transition area through the FIMS device. The FIMS device comprises a wafer box bearing table and a control door, the wafer box bearing table is provided with at least one air inlet and at least one air outlet, and wafers can be mutually conveyed between the FIMS device and the loading transition area through the open state of the control door in the FIMS device; when the wafer box containing the wafer is arranged on the FIMS device, the air inlet and the air outlet in the wafer box bearing table are opened, and the air inlet speed of the air inlet is larger than the air outlet speed of the air outlet; when the gas in the wafer box reaches the preset gas pressure, the exhaust port is closed, the control door and a door of the wafer box are opened, the preset gas pressure is larger than the gas pressure of the loading transition area, and particles are prevented from polluting wafers in the wafer box; and when the wafers in the wafer box are conveyed, the control door is closed and the wafer box door is closed at the same time.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a furnace tube device. Background Art

[0002] The semiconductor manufacturing process mainly involves multiple photolithography processes, etching processes, and thin film growth processes to form semiconductor devices of various structures on semiconductor wafers. Among them, the thin film growth process generally uses thermal oxidation and chemical vapor deposition processes.

[0003] The existing thermal oxidation method is mainly carried out using furnace tube equipment: first, the wafers in the wafer box are transferred to the wafer boat; then the wafer boat loaded with the wafers is placed in the process chamber of the furnace tube equipment; then the reaction gas is introduced into the high-temperature furnace tube, so that the reaction gas undergoes a chemical reaction in the process chamber of the furnace tube equipment, and a thin film grows on the surface of the wafer; then the wafers on the wafer boat are cooled, and the cooled wafers are transferred back to the wafer box.

[0004] Currently, please refer to Figure 1 When transferring the wafers in the wafer box 1 to the wafer boat 4, the wafer box 1 needs to be placed on the FIMS (FIMS-Front-opening Interface Mechanical Standard, a standard specified by Applied Materials, called the front-opening interface mechanical standard) device 2 first; then open the door of the wafer box 1, first transfer the wafers in the wafer box 1 to the loading transition area 3, and then transfer the wafers in the loading transition area 3 to the wafer boat 4. However, as time accumulates, the FIMS device will experience mechanical wear and generate particles as the working time increases. When the door of the wafer box is opened, the particles will enter the wafer box and fall on the wafers, resulting in a decrease in yield.

[0005] Therefore, how to prevent particles from entering the wafer box and improve the wafer yield has become a technical problem that the industry urgently needs to solve. Utility Model Content

[0006] In order to solve the above technical problems, the utility model provides a furnace tube device, comprising a wafer storage and transfer area, a FIMS device, and a loading transition area, wherein the wafers in the wafer storage and transfer area are transferred to the loading transition area through the FIMS device; the FIMS device comprises a wafer box carrier and an operating door, wherein the wafer box carrier is provided with at least one air inlet and at least one exhaust port, and through the opening state of the operating door in the FIMS device, the wafers can be transferred between the FIMS device and the loading transition area;

[0007] When the wafer box containing wafers is on the FIMS device, the air inlet and the exhaust port on the wafer box carrier are opened, and the air intake speed of the air inlet is greater than the exhaust speed of the exhaust port; when the gas in the wafer box reaches a preset air pressure, the exhaust port is closed, and the operating door and the door of the wafer box are opened, wherein the preset air pressure is greater than the air pressure in the loading transition zone; when the wafers in the wafer box are transferred, the operating door is closed and the wafer box door is closed at the same time.

[0008] Preferably, there are two air inlets, which are arranged on the same side of the wafer box supporting platform.

[0009] Preferably, there are two exhaust ports, which are arranged in parallel with the two air inlets.

[0010] Preferably, the gas delivered by the gas inlet is nitrogen.

[0011] Preferably, the preset air pressure is at least 10 Pa greater than the air pressure in the loading transition zone.

[0012] Preferably, the FIMS device is provided with an air outlet on a door frame on one side of the operating door.

[0013] Preferably, the wafer box is a front-opening wafer box.

[0014] Compared with the prior art, the technical solution of the embodiment of the utility model has the following beneficial effects:

[0015] The utility model provides an air inlet and an exhaust port on a wafer box supporting platform of a FIMS device accordingly. When a wafer box containing wafers is placed on the wafer box supporting platform, the air vent of the wafer box is communicated with the air inlet of the wafer box supporting platform, and the exhaust port of the wafer box is communicated with the exhaust port of the wafer box supporting platform. The purge gas enters the wafer box through the air inlet of the wafer box supporting platform and the air vent of the wafer box in sequence. By adjusting the gas speed entering and exiting the wafer box, the air intake speed entering the wafer box is greater than the exhaust speed exiting the wafer box, so as to maintain a certain positive pressure in the wafer box. When the gas in the wafer box reaches a preset pressure, which is greater than the pressure in the loading transition zone, the exhaust port of the wafer box carrier is closed, and the operating door of the FIMS device and the door of the wafer box are opened. Since the pressure in the wafer box is higher than the pressure in the loading transition zone, when the operating door of the FIMS device and the door of the wafer box are opened, the gas in the wafer box will be discharged outward, so the particles raised when the operating door and the door of the wafer box are opened cannot enter the wafer box against the direction of the airflow to contaminate the wafers in the wafer box, thereby preventing particles from contaminating the wafers in the wafer box, thereby improving the yield of the wafers. In addition, the oxygen content in the wafer box is reduced during the process of purge gas intake and exhaust, preventing the wafers from being oxidized during the transfer to the process chamber and affecting the subsequent thin film growth process. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0017] Figure 1 It is a structural schematic diagram of the furnace tube equipment;

[0018] Figure 2 It is a schematic diagram of the structure of a FIMS device with a hole opened on the side wall in the prior art;

[0019] Figure 3 It is a top view of the airflow direction in the wafer box in the prior art;

[0020] Figure 4 It is a front view of the airflow direction in the wafer box in the prior art;

[0021] Figure 5 It is a schematic diagram of the structure of particles falling on the wafer;

[0022] Figure 6 It is a schematic diagram of the connection structure between the FIMS device and the wafer box provided by one embodiment of the utility model;

[0023] Figure 7 It is a structural schematic diagram of the bottom of a wafer box provided by an embodiment of the utility model;

[0024] Figure 8 It is a structural schematic diagram of a wafer box carrier provided by an embodiment of the utility model;

[0025] Fig. 9 It is a schematic diagram of the air hole connection structure between the wafer box carrier and the wafer box provided by an embodiment of the utility model;

[0026] Fig.10 This is a diagram of the airflow direction in a wafer box provided by an embodiment of the utility model.

[0027] Description of reference numerals:

[0028] 1- Wafer box;

[0029] 101- vent hole;

[0030] 102-exhaust hole;

[0031] 2-FIMS device;

[0032] 21- opening;

[0033] 201-wafer box carrier;

[0034] 2011-Air intake;

[0035] 2012-Exhaust port;

[0036] 202-intake pipe;

[0037] 203-exhaust pipe;

[0038] 204- regulating valve;

[0039] 3- Loading transition area;

[0040] 4- Crystal Boat;

[0041] 5- Wafer;

[0042] 6- Granules. DETAILED DESCRIPTION

[0043] As described in the background technology, in the thin film growth process of the thermal oxidation method, when transferring the wafers in the wafer box to the wafer boat, it is necessary to first place the wafer box on the FIMS device; then open the door of the wafer box, first transfer the wafers in the wafer box to the loading transition area, and then transfer the wafers in the loading transition area to the wafer boat. However, as time accumulates, the FIMS device will experience mechanical wear and produce particles as the working time increases. When the door of the wafer box is opened, the particles will enter the wafer box and fall on the wafer, resulting in a decrease in yield. The following will be described in detail with reference to the accompanying drawings.

[0044] Since the environment inside the wafer box is usually the atmospheric environment, when the door of the wafer box is opened on the FIMS device to prepare for wafer transfer, air will enter the loading transition area, causing the oxygen content in the loading transition area to increase, thereby causing the wafer to be oxidized during transfer to the process chamber.

[0045] To reduce the oxygen content in the loading transition zone, refer to Figures 2 to 4 At present, an opening 21 is provided on the side wall of the FIMS device 2 and connected to a nitrogen pipeline. When the door of the wafer box 1 is opened, nitrogen is introduced into the loading transition zone 3 through the opening 21 to reduce the oxygen content in the loading transition zone 3. However, as time accumulates, the FIMS device 2 will experience mechanical wear and generate particles as the working time increases. Since nitrogen is introduced into the loading transition zone 3 through the opening 21 when the door of the wafer box 1 is opened, the air pressure in the wafer box 1 will be lower than the air pressure in the loading transition zone 3. Then, the particles 6 raised when the door of the wafer box 1 is opened will enter the wafer box 1 with the nitrogen gas flow and fall on the wafer 5. Please refer to Figure 4 , resulting in reduced yield.

[0046] In order to solve the above technical problems, the utility model provides a furnace tube device, comprising a wafer storage and transfer area, a FIMS device, and a loading transition area, wherein the wafers in the wafer storage and transfer area are transferred to the loading transition area through the FIMS device; the FIMS device comprises a wafer box carrier and an operating door, wherein the wafer box carrier is provided with at least one air inlet and at least one exhaust port, and through the opening state of the operating door in the FIMS device, the wafers can be transferred between the FIMS device and the loading transition area;

[0047] When the wafer box containing wafers is on the FIMS device, the air inlet and the exhaust port on the wafer box carrier are opened, and the air intake speed of the air inlet is greater than the exhaust speed of the exhaust port; when the gas in the wafer box reaches a preset air pressure, the exhaust port is closed, and the operating door and the door of the wafer box are opened, wherein the preset air pressure is greater than the air pressure in the loading transition zone; when the wafers in the wafer box are transferred, the operating door is closed and the wafer box door is closed at the same time.

[0048] The utility model is provided with an air inlet and an exhaust port on the wafer box carrier of the FIMS device. When the wafer box with wafers is placed on the wafer box carrier, the vent of the wafer box is connected with the air inlet of the wafer box carrier, and the exhaust port of the wafer box is connected with the exhaust port of the wafer box carrier. The purge gas enters the wafer box through the air inlet of the wafer box carrier and the vent of the wafer box in sequence, and the air in the wafer box is discharged to the outside of the FIMS device through the exhaust port of the wafer box and the exhaust port of the wafer box carrier in sequence. The utility model adjusts the gas speed entering and exiting the wafer box so that the air intake speed entering the wafer box is greater than the exhaust speed of the wafer box, so as to maintain a certain positive pressure in the wafer box. When the gas in the wafer box reaches a preset pressure, which is greater than the pressure in the loading transition zone, the exhaust port of the wafer box carrier is closed, and the operating door of the FIMS device and the door of the wafer box are opened. Since the pressure in the wafer box is higher than the pressure in the loading transition zone, when the operating door of the FIMS device and the door of the wafer box are opened, the gas in the wafer box will be discharged outward, so the particles raised when the operating door and the door of the wafer box are opened cannot enter the wafer box against the direction of the airflow to contaminate the wafers in the wafer box, thereby solving the above technical problems and improving the yield. In addition, the oxygen content in the wafer box is reduced during the process of purge gas intake and exhaust, preventing the wafer from being oxidized during the transfer to the process chamber and affecting the subsequent thin film growth process.

[0049] In order to make the above-mentioned purposes, features and beneficial effects of the utility model more obvious and easy to understand, the technical scheme in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is only a part of the embodiment of the utility model, not all the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model.

[0050] Please refer to Figures 6 to 9 This embodiment provides a furnace tube device, including a wafer storage and transfer area, a FIMS device 2 and a loading transition area 3. The wafers in the wafer storage and transfer area are transferred to the loading transition area 3 through the FIMS device 2.

[0051] At present, the semiconductor industry uses a wafer box 1 as a container for storing and transferring wafers. Therefore, the wafers in the wafer box 1 are transferred to the loading transition area 3 through the FIMS device 2. The wafer box 1 is a mature technology in this field. Therefore, this embodiment does not limit the specific structure of the wafer box 1. At present, the semiconductor industry often uses a front-opening wafer box 1. Specifically, it includes a box body with a front opening and a box door. The box door is arranged at the front end of the box body and cooperates with the box body to form a storage space for accommodating a plurality of wafers.

[0052] The FIMS device 2 includes a wafer box carrier 201 and an operating door, and the wafer box carrier 201 and the loading transition area 3 are respectively located on both sides of the operating door. The wafer box carrier 201 is used to carry the wafer box 1. When the wafer box 1 is placed on the wafer box carrier 201, the box door of the wafer box 1 faces the operating door of the FIMS device 2. Through the opening state of the operating door and the box door, the wafers can be transferred between the wafer box 1 and the loading transition area 3. After the wafers in the wafer box 1 are transferred, the operating door of the FIMS device 2 is closed, and the box door of the wafer box 1 is closed at the same time.

[0053] The present invention does not impose any specific restrictions on whether the box door and the operating door are arranged in linkage. As an embodiment, the box door and the operating door have no direct mechanical connection, that is, the box door and the operating door are opened and closed separately. As another embodiment, the box door and the operating door are arranged in linkage, that is, when the operating door is opened and closed, the operating door will drive the box door to open and close together. This embodiment does not impose any specific restrictions on the linkage structure between the box door and the operating door. For example, the box door is provided with a slot similar to a keyhole, and the operating door is provided with a protrusion that can be inserted into the slot on the box door. When the wafer box 1 is transported to the FIMS device 2, the box door and the operating door are fixed together by the protrusion being inserted into the slot. Therefore, when the operating door is opened, the box door will be opened together; after the wafers in the wafer box are transferred, when the operating door is closed, the box door will be closed together.

[0054] The bottom of the wafer box 1 is also provided with at least one vent hole 101 and at least one exhaust hole 102. Corresponding to the structure of the vent hole 101 and the exhaust hole 102 at the bottom of the wafer box 1, at least one air inlet 2011 and at least one exhaust hole 2012 are provided on the wafer box carrier 201. When the wafer box 1 is placed on the wafer box carrier 201, the vent hole 101 of the wafer box 1 is connected with the air inlet 2011 of the wafer box carrier 201 at the corresponding position, and the exhaust hole 102 of the wafer box 1 is connected with the exhaust hole 2012 of the wafer box carrier 201 at the corresponding position. The utility model does not specifically limit the number of the vent holes 101 and exhaust holes 102 on the wafer box 1 and the air inlets 2011 and exhaust holes 2012 on the wafer box carrier 201. Generally speaking, the bottom of the wafer box 1 is provided with two vent holes 101 and two exhaust holes 102, the two vent holes 101 are arranged on the same side of the wafer box 1, and the two exhaust holes 102 are arranged in parallel with the two vent holes 101. Correspondingly, the wafer box carrier 201 is provided with two air inlets 2011 and two exhaust holes 2012, the two air inlets 2011 are arranged on the same side of the wafer box carrier 201, and the two exhaust holes 2012 are arranged in parallel with the two air inlets 2011.

[0055] The utility model adjusts the speed of gas entering and exiting the wafer box 1 so that the speed of gas entering the wafer box 1 is greater than the speed of gas exhausting from the wafer box 1, with the purpose of maintaining a certain positive pressure in the wafer box 1. When the gas in the wafer box 1 reaches a preset pressure, wherein the preset pressure is greater than the pressure in the loading transition zone 3, the exhaust port 2012 of the wafer box carrier 201 is closed, and the operating door of the FIMS device and the door of the wafer box 1 are opened. Since the pressure in the wafer box 1 is higher than the pressure in the loading transition zone 3, when the operating door of the FIMS device and the door of the wafer box 1 are opened, the gas in the wafer box 1 will be discharged to the outside, so that the particles raised when the operating door and the door of the wafer box 1 are opened cannot enter the wafer box 1 against the direction of the airflow to contaminate the wafers in the wafer box 1.

[0056] In order to facilitate the adjustment of the gas speed in and out of the wafer box 1, in one embodiment, a regulating valve for adjusting the gas speed is provided at the gas inlet 2011 and the gas outlet 2012, and the regulating valve is also used to control the on and off of the gas. Fig.10 The air inlet 2011 of the wafer box carrier 201 is connected to the gas source through the air inlet pipe 202, and the exhaust port 2012 of the wafer box carrier 201 is connected to the exhaust pipe 203. The air inlet pipe 202 and the exhaust pipe 203 are respectively provided with regulating valves 204, the purpose of which is to adjust the gas speed in and out of the wafer box 1, and at the same time, it is also used to control the on and off of the gas in and out of the wafer box 1.

[0057] The utility model adjusts the gas speed entering and exiting the wafer box 1 so that the air intake speed entering the wafer box 1 is greater than the exhaust speed exiting the wafer box 1, with the purpose of making the gas in the wafer box 1 reach a preset air pressure, wherein the preset air pressure is greater than the air pressure in the loading transition zone 3. The utility model does not impose specific restrictions on the specific value of the preset air pressure, which can be set according to actual use requirements. As an embodiment, the preset air pressure is at least 10Pa greater than the air pressure in the loading transition zone 3, ensuring that the particles raised when the operating door and the door of the wafer box 1 are opened cannot enter the wafer box 1, preventing the particles from contaminating the wafers in the wafer box 1.

[0058] Furthermore, when the wafer box 1 containing wafers is placed on the wafer box carrier 201, since the environment in the wafer box 1 is usually an atmospheric environment, in order to purge the air in the wafer box 1 to reduce the oxygen content in the wafer box 1, the air inlet 2011 and the exhaust port 2012 on the wafer box carrier 201 are opened, and the purge gas enters the wafer box 1 through the air inlet 2011 of the wafer box carrier 201 and the vent 101 of the wafer box 1 in sequence, and the air in the wafer box 1 is discharged to the outside of the FIMS device 2 through the exhaust hole 102 of the wafer box 1 and the exhaust port 2012 of the wafer box carrier 201 in sequence, thereby reducing the oxygen content in the wafer box 1. When the gas in the wafer box 1 reaches a preset pressure, that is, the gas in the wafer box 1 is greater than the pressure in the loading transition zone 3, the operating door of the FIMS device 2 and the door of the wafer box 1 are opened, and the gas in the wafer box 1 enters the loading transition zone 3, thereby reducing the oxygen content in the loading transition zone 3.

[0059] Since the purge gas input into the wafer box 1 can be used to reduce the oxygen content of the wafer box 1, thereby reducing the oxygen content in the loading transition zone 3, preventing the wafer from being oxidized during the transfer to the process chamber, the utility model requires that the purge gas cannot contain oxygen and has no effect on the processing technology of the furnace tube equipment. For example, it can be an inert gas or nitrogen. In one embodiment, the purge gas can preferably be nitrogen.

[0060] As an embodiment, in addition to the air inlet 2011 and the exhaust port 2012 provided on the wafer box carrier 201 of the FIMS device 2, an opening is also provided on the side wall of the FIMS device 2, that is, the FIMS device 2 is provided with an air outlet on the door frame on one side of the operating door. The purge gas enters the wafer box 1 from the air inlet 2011 and is discharged from the FIMS device 2 from the exhaust port 2012. When the gas in the wafer box 1 reaches a preset air pressure, wherein the preset air pressure is greater than the air pressure of the loading transition zone 3, the exhaust port 2012 of the wafer box carrier 201 is closed, the operating door of the FIMS device 2 and the box door of the wafer box 1 are opened, and the purge gas is released from the air outlet at the same time. The additional air outlet discharges the purge gas while the box door is opened, which can further reduce the flying particles caused by the change in air pressure and contaminate the wafer, thereby improving the yield.

[0061] In summary, the utility model is provided with an air inlet 2011 and an exhaust port 2012 on the wafer box carrier 201 of the FIMS device. When the wafer box 1 containing wafers is placed on the wafer box carrier 201, the vent 101 of the wafer box 1 is communicated with the air inlet 2011 of the wafer box carrier 201, and the exhaust port 102 of the wafer box 1 is communicated with the exhaust port 2012 of the wafer box carrier 201. The purge gas enters the wafer box 1 through the air inlet 2011 of the wafer box carrier 201 and the vent 101 of the wafer box 1 in sequence, and the air in the wafer box 1 is discharged to the outside of the FIMS device through the exhaust port 102 of the wafer box 1 and the exhaust port 2012 of the wafer box carrier 201 in sequence. The utility model adjusts the gas speed entering and exiting the wafer box 1 so that the air intake speed entering the wafer box 1 is greater than the exhaust speed discharged from the wafer box 1, in order to maintain a certain positive pressure in the wafer box 1. When the gas in the wafer box 1 reaches a preset pressure, wherein the preset pressure is greater than the pressure in the loading transition zone 3, the exhaust port 2012 of the wafer box carrier 201 is closed, and the operating door of the FIMS device and the door of the wafer box 1 are opened. Since the air pressure in the wafer box 1 is higher than the pressure in the loading transition zone 3, when the operating door of the FIMS device and the door of the wafer box 1 are opened, the gas in the wafer box 1 will be discharged to the outside. Then, the particles raised when the operating door and the door of the wafer box 1 are opened will not be able to enter the wafer box 1 against the direction of the airflow and contaminate the wafers in the wafer box 1, thereby improving the yield of the wafers.

[0062] Furthermore, since the purge gas enters the wafer box 1 through the air inlet 2011 of the wafer box carrier 201 and the air vent 101 of the wafer box 1 in sequence, the air in the wafer box 1 is discharged to the outside of the FIMS device 2 through the exhaust hole 102 of the wafer box 1 and the exhaust port 2012 of the wafer box carrier 201 in sequence, thereby reducing the oxygen content in the wafer box 1. When the gas in the wafer box 1 reaches the preset pressure, that is, the gas in the wafer box 1 is greater than the pressure in the loading transition zone 3, the operating door of the FIMS device 2 and the door of the wafer box 1 are opened, and the gas in the wafer box 1 will enter the loading transition zone 3, reducing the oxygen content in the loading transition zone 3, thereby preventing the wafer from being oxidized during the transfer to the process chamber and affecting the subsequent thin film growth process.

[0063] Although the utility model is disclosed as above, the utility model is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the utility model. Therefore, the protection scope of the utility model shall be subject to the scope defined by the claims.

Claims

1. A furnace tube device, comprising a wafer storage and transfer area, a FIMS device, and a loading transition area, wherein the wafers in the wafer storage and transfer area are transferred to the loading transition area through the FIMS device; characterized in that: The FIMS device comprises a wafer box carrier and an operating door, wherein the wafer box carrier is provided with at least one air inlet and at least one air outlet, and the wafers can be transferred between the FIMS device and the loading transition area by opening the operating door in the FIMS device; When the wafer box containing wafers is on the FIMS device, the air inlet and the air exhaust port on the wafer box carrier are opened, and the air intake speed of the air inlet is greater than the exhaust speed of the exhaust port; When the gas in the wafer box reaches a preset pressure, the exhaust port is closed, and the operating door and the door of the wafer box are opened, wherein the preset pressure is greater than the pressure in the loading transition zone; when the wafers in the wafer box are transferred, the operating door is closed and the wafer box door is closed at the same time.

2. The furnace tube equipment according to claim 1, characterized in that: There are two air inlets, which are arranged on the same side of the wafer box supporting platform.

3. The furnace tube equipment according to claim 2, characterized in that: There are two exhaust ports, which are arranged in parallel with the two air inlets.

4. The furnace tube equipment according to claim 1, characterized in that: The gas delivered by the gas inlet is nitrogen.

5. The furnace tube equipment according to claim 1, characterized in that: The preset air pressure is at least 10 Pa greater than the air pressure in the loading transition zone.

6. The furnace tube equipment according to claim 1, characterized in that: The FIMS device is provided with an air outlet on the door frame at one side of the operating door.

7. The furnace tube equipment according to claim 1, characterized in that: The wafer box is a front-opening wafer box.

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