Detection device and ion implantation equipment
Through the use of sensors, reflectors, and control system detection devices in ion injection device, the problem of the surface height of the directional table is solved. Reliability.
Patent Information
- Application Number
- CN202323283351.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-04
- Publication Date
- 2025-01-28
- Estimated Expiration
- 2033-12-04
AI Technical Summary
During the ion implantation process, abnormal height of the directional stage may cause the wafer surface to be scratched by a robot, and the prior art is difficult to detect and warn of this situation in a timely manner.
Design a detection device, including sensors, reflectors and control systems. The sensor transmits incident light towards the surface of the orientation table. The reflex light is reflected by the reflex mirror and the orientation table. The sensor obtains the reflex light signal and sends it to the control system. Height abnormality sends an exception signal to send a warning.
Through the use of the detection device, the height of the working location of the direction table in a timely manner before the ion injection device starts at the beginning of work to avoid the surface of the wafer surface due to the height abnormality and improve the reliability of the process.
Smart Images
Figure CN222421882U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a detection device and ion implantation equipment. Background Art
[0002] Ion implantation is a process of doping ions of impurities into the surface of a wafer. When implanting ions into a wafer, the wafer must first be placed on an orientation table by a robot, and the grooves on the surface of the wafer must be rotated to the set position by the orientation table. The robot then transfers the wafer from the orientation table to the process chamber of the ion implantation equipment.
[0003] Usually, the height of the orientation stage is determined by setting the number of steps that the orientation stage moves from the starting position in the encoder. However, when the drive device that drives the orientation stage up and down fails, such as the rod gap of the drive wire becomes larger, the orientation stage does not reach the set height after moving the set number of steps. When the orientation stage rotates the groove on the surface of the wafer to the set position, the robot still grabs the wafer from the orientation stage according to the set height of the orientation stage, thereby scratching the surface of the wafer.
[0004] Therefore, a detection device is needed to detect the height of the working position of the orientation stage before the orientation stage starts working, so as to avoid the wafer surface being scratched by the robot due to the abnormal height of the orientation stage during the wafer grabbing process. Utility Model Content
[0005] The purpose of the present application is to provide a detection device and an ion implantation device to detect the height of the working position of an orienting table before the orienting table starts working.
[0006] The first aspect of the present application provides a detection device for detecting the position change of an orientation table of an ion implantation device, comprising a sensor, a reflector and a control system, wherein the sensor and the reflector are arranged above the orientation table, and the sensor is configured to emit incident light to the surface of the orientation table, the incident light is reflected by the surface of the orientation table, vertically emitted to the surface of the reflector, and is reflected again by the reflector and the orientation table in sequence to form reflected light, the sensor is also configured to obtain an optical signal of the reflected light, and send a normal signal to the control system when obtaining the optical signal of the reflected light, and the control system controls the ion implantation device to operate after receiving the normal signal; and the sensor sends an abnormal signal to the control system when failing to obtain the optical signal of the reflected light, and the control system issues an alarm after receiving the abnormal signal.
[0007] In some embodiments, the orientation stage is disposed in a chamber, a light-transmitting area is disposed on the top of the chamber, and the sensor and the reflector are respectively disposed above the light-transmitting area.
[0008] In some embodiments, the sensor and the reflector are both fixedly connected to the chamber, and a first angle between the incident light emitted by the sensor and the top of the chamber is complementary to a second angle between the reflector and the top of the chamber.
[0009] In some embodiments, the second angle is 65-75°.
[0010] In some embodiments, the width of the reflector is 0.28-0.32 mm, where the width is the distance between an end of the reflector close to the top of the chamber and an end of the reflector far from the top of the chamber.
[0011] In some embodiments, a light shielding member that is retractable along the width direction of the reflector is disposed on a side of the reflector that faces the light-transmitting area.
[0012] In some embodiments, the light shielding member includes an optical slit sheet.
[0013] In some embodiments, the reflector is a plane reflector, and a surface of the reflector facing the light-transmitting area is a reflective surface.
[0014] In some embodiments, the plane mirror comprises a laser mirror.
[0015] The second aspect of the present application provides an ion implantation device, comprising: the detection device described in the first aspect of the present application; a chamber; an orientation table, arranged in the chamber, for supporting a wafer, the orientation table being configured to be able to be lifted and lowered in a vertical direction; and a robot arm, for grabbing the wafer from the orientation table or placing the wafer on the orientation table.
[0016] The beneficial effects of the detection device and ion implantation device provided by the embodiments of the present application include but are not limited to:
[0017] The present application provides a detection device, including a sensor, a reflector and a control system, wherein the sensor can emit incident light to an orientation stage in a working position, the incident light is reflected by the surface of the orientation stage, vertically emitted to the surface of the reflector, and sequentially reflected again by the reflector and the orientation stage to form reflected light, the sensor is configured to receive an optical signal of the reflected light, when the height of the orientation stage's working position is not at a preset height, the sensor cannot obtain a signal of the reflected light, and sends an abnormal signal to the control system, so that the control system issues an alarm, thereby promptly notifying the staff of the abnormal height of the orientation stage's working position before the ion implantation equipment starts working, thereby avoiding scratches on the wafer surface due to the abnormal height of the orientation stage during wafer transfer.
[0018] In addition, a shading member that can be extended and retracted along the width direction of the reflector is provided on one side of the reflector facing the light-transmitting area to adjust the width of the reflective area of the reflector, thereby adjusting the allowable error range of the working position height of the orientation platform.
[0019] The ion implantation equipment provided in the present application is provided with a detection mechanism that can detect the position change of the orientation stage. When the height of the working position of the orientation stage is not at a preset height, the detection mechanism can send an abnormal signal to the control system, so that the control system issues an alarm, thereby promptly notifying the staff of the abnormal height of the working position of the orientation stage before the ion implantation equipment starts working, thereby avoiding scratches on the wafer surface due to the abnormal height of the orientation stage during the wafer transfer process. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] The following figures describe in detail the exemplary embodiments disclosed in this application. The same reference numerals represent similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting, exemplary embodiments, and the drawings are only for the purpose of illustration and description, and are not intended to limit the scope of this application. Other embodiments may also accomplish the inventive intent in this application. It should be understood that the drawings are not drawn to scale.
[0021] in:
[0022] Figure 1 is a schematic diagram of the structure of a detection device and an ion implantation device according to some embodiments of the present application;
[0023] Figure 2 A schematic diagram of the detection principle of the detection device for detecting the position of the orientation station according to some embodiments of the present application; and
[0024] Figure 3 Schematic diagram of the working process of ion implantation equipment according to some embodiments of the present application. DETAILED DESCRIPTION
[0025] The following description provides specific application scenarios and requirements of the present application, with the purpose of enabling those skilled in the art to make and use the content in the present application. It will be apparent to those skilled in the art that various local modifications to the disclosed embodiments are apparent, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present application. Therefore, the present application is not limited to the embodiments shown, but to the widest scope consistent with the claims.
[0026] Ion implantation equipment generally includes a chamber, an orientation stage and a manipulator arranged in the chamber. Before the wafer is subjected to the ion implantation process, the manipulator moves the wafer from the wafer box to the orientation stage at a preset low position, the orientation stage rises to a preset high position, i.e., the working position, and drives the wafer to rotate so that the groove on the surface of the wafer moves to the set position, then the manipulator removes the wafer from the orientation stage at the working position and sends it to the process chamber of the ion implantation equipment, the orientation stage descends to the preset low position, and waits for the next wafer to be placed.
[0027] During this process, when a failure occurs in the driving device that drives the orientation table to move up and down, for example, the gap of the transmission screw of the driving device becomes larger, causing the working position of the orientation table to be lower than the preset high position, the robot arm may scratch the surface of the wafer when grabbing the wafer from the orientation table.
[0028] Although the probability of the wafer surface being scratched can be reduced by regularly maintaining the driving device of the orientation table or increasing the distance between the upper surface of the robot's support plate and the lower surface of the wafer when the robot takes the wafer from the orientation table, these measures cannot promptly issue an alarm when the orientation table cannot reach the preset height due to a malfunction, so that the robot may still scratch the surface of the wafer during the process of the robot grabbing the wafer from the orientation table.
[0029] The present application provides a detection device and an ion implantation device, which can judge whether the height of the working position of the orientation stage is consistent with a preset height before the orientation stage starts working, thereby avoiding the wafer surface being scratched by the robot arm due to the working position of the orientation stage being lower than the preset height after the orientation stage starts working.
[0030] The detection device and transmission mechanism provided by the present application will be described in detail below with reference to the accompanying drawings and embodiments.
[0031] refer to Figure 1 An embodiment of the present application provides an ion implantation device, including a chamber 100, an orientation stage 200 disposed in the chamber 100, a detection device 300 for detecting a position change of the orientation stage 200, at least one robot 400 for grabbing or placing a wafer 11, and a control system 303 for controlling the working state of the ion implantation device.
[0032] In some embodiments, a light-transmitting area 101 is disposed on the top of the chamber 100 .
[0033] The detection device 300 provided in the present application includes a sensor 301, a reflector 302 and a control system 303. The sensor 301 and the reflector 302 are arranged above the orientation platform 200. The sensor 301 is configured to emit incident light to the surface of the orientation platform 200. The incident light is reflected by the surface of the orientation platform 200, vertically emitted to the surface of the reflector 302, and is reflected again by the reflector 302 and the orientation platform 200 in sequence to form reflected light. The sensor 301 is also configured to obtain an optical signal of the reflected light, and send a normal signal to the control system 303 when the optical signal of the reflected light is obtained. After receiving the normal signal, the control system 303 controls the ion implantation equipment to work; and when the sensor 301 cannot obtain the optical signal of the reflected light, it sends an abnormal signal to the control system 303. After receiving the abnormal signal, the control system 303 issues a warning.
[0034] refer to Figure 2 The working principle of the detection device 300 provided in the present application is as follows: the orientation platform 200 is raised from a preset low position to a working position, and the sensor 301 is controlled to emit the incident light to the orientation platform 200. When the working position of the orientation platform 200 is at the P1 position, that is, when the height of the working position reaches the preset high position, the incident light is reflected by the orientation platform 200 and vertically emitted to the reflector 302, and can be reflected again by the reflector 302 and the orientation platform 200 in sequence to form reflected light, which is emitted to the sensor 301. After receiving the optical signal of the reflected light, the sensor 301 sends a normal signal to the control system 303. After obtaining the normal signal, the control system 303 starts the ion implantation device;
[0035] When the working position of the orientation platform 200 is at the P2 position, that is, the height of the working position is lower than the preset high position, the incident light cannot reach the reflective area of the reflector 302 after being reflected by the orientation platform 200, because the reflected light cannot be formed. When the sensor 301 cannot receive the reflected light, it sends an abnormal signal to the control system 303, and the control system 303 issues an alarm after receiving the abnormal signal;
[0036] Similarly, when the height of the working position of the orientation platform 200 is higher than the preset high position, the sensor 301 is also unable to obtain the reflected light, which will not be elaborated here.
[0037] The sensor 301 and the reflector 302 can be arranged inside the chamber 100 or outside the chamber 100, as long as the incident light emitted by the sensor 301 can reach the surface of the orientation stage 200 and be reflected by the orientation stage 200 to the reflector 302.
[0038] In some embodiments, the sensor 301 and the reflector 302 are respectively disposed above the light-transmitting area. In some embodiments, the sensor 301 and the reflector 302 are fixed above the light-transmitting area by independent fixing devices, such as support rods. Figure 1 and Figure 2 The sensor 301 and the reflector 302 are both fixedly connected to the chamber 100, and a first angle α between the incident light emitted by the sensor 301 and the top of the chamber 100 is complementary to a second angle β between the reflector 302 and the top of the chamber 100, so that the incident light can be vertically emitted to the reflector 302 after being reflected by the orientation stage 200. In some embodiments, the second angle β is 65-75°.
[0039] In some embodiments, the reflector 302 is a plane reflector, and a surface of the reflector 302 facing the light-transmitting area 101 is a reflective surface. In some embodiments, the plane reflector includes a laser reflector.
[0040] In some embodiments, the width of the reflector 302 is 0.28-0.32 mm. It should be noted that the width of the reflector 302 refers to the distance between one end of the reflector 302 close to the top of the chamber 100 and one end of the reflector 302 far from the top of the chamber 100 .
[0041] In some embodiments, the side of the reflector 302 facing the light-transmitting area is provided with a light shielding member 302a that can be extended and retracted along the width direction of the reflector 302 to adjust the width of the reflective area of the reflector 302, thereby adjusting the allowable error range of the working position height of the orientation stage 200, referring to Figure 2 , the conversion relationship between the allowable error range and the width of the reflective area of the reflector 302 is:
[0042] Δh=Δdsinα / sin2α=Δd / 2cosα;
[0043] Wherein, Δh is the allowable error range of the height of the working position of the orientation platform 200 ; and Δd is the width of the reflective area of the reflector 302 .
[0044] from Figure 2It can be seen that the shading member 302a can reduce the width of the reflective area of the reflector 302 from Δd to Δd', thereby reducing the allowable error range of the working position height of the orientation platform 200 from Δh to Δh', and further, when the working position of the orientation platform 200 is at P2', the sensor 301 can send an abnormal signal to the control system 303.
[0045] In some embodiments, the light shielding member 302a includes an optical slit. The optical slit has a light-transmitting slit with adjustable width, the width direction of the light-transmitting slit is consistent with the width direction of the reflector 302, and the size of the reflective area of the reflector 302 can be adjusted by adjusting the width of the light-transmitting slit, thereby adjusting the allowable error range of the working position height of the orientation platform 200.
[0046] In some embodiments, the sensor 301 includes a transmitter, a receiver, and a detection circuit. The transmitter is used to send the incident light. In some embodiments, the transmitter includes a laser diode. The receiver is used to obtain the optical signal of the reflected light, and when the optical signal of the reflected light is obtained, the normal signal is sent to the control system 303 through the detection circuit; and when the receiver cannot obtain the optical signal of the reflected light, the abnormal signal is sent to the control system 303 through the detection circuit.
[0047] In some embodiments, the control system 303 is used to receive the normal signal and the abnormal signal and control the working state of the ion implantation equipment. The control system 303 is configured to start the ion implantation equipment after receiving the normal signal; and to issue an alarm after receiving the abnormal signal.
[0048] The beneficial effects of the detection device provided by the embodiments of the present application include but are not limited to:
[0049] The present application provides a detection device, including a sensor, a reflector and a control system, wherein the sensor can emit incident light to an orientation stage in a working position, the incident light is reflected by the surface of the orientation stage, vertically emitted to the surface of the reflector, and sequentially reflected again by the reflector and the orientation stage to form reflected light, the sensor is configured to receive an optical signal of the reflected light, when the height of the orientation stage's working position is not at a preset height, the sensor cannot obtain a signal of the reflected light, and sends an abnormal signal to the control system, so that the control system issues an alarm, thereby promptly notifying the staff of the abnormal height of the orientation stage's working position before the ion implantation equipment starts working, thereby avoiding scratches on the wafer surface due to the abnormal height of the orientation stage during wafer transfer.
[0050] In addition, a shading member that can be extended and retracted along the width direction of the reflector is provided on one side of the reflector facing the light-transmitting area to adjust the width of the reflective area of the reflector, thereby adjusting the allowable error range of the working position height of the orientation platform.
[0051] As another technical solution, an embodiment of the present application also provides an ion implantation device, including a chamber 100, an orientation stage 200, at least one robot 400 for grabbing or placing a wafer 11, and a detection device 300 provided in an embodiment of the present application for detecting a position change of the orientation stage 200.
[0052] In some embodiments, a light-transmitting area is provided on the top of the chamber 100. In some embodiments, the light-transmitting area comprises a transparent plastic plate, and optionally, the material of the plastic plate comprises acrylic resin (PMMA). In some embodiments, the light-transmitting area comprises a transparent glass plate.
[0053] In some embodiments, the orientation stage 200 is disposed in the chamber 100 to support the wafer 11 , and the orientation stage 200 is configured to be able to be lifted and lowered in a vertical direction.
[0054] In some embodiments, the material of the orientation stage 200 includes metal. Optionally, the material of the orientation stage 200 includes stainless steel.
[0055] In some embodiments, the surface of the orientation stage 200 for supporting the wafer 11 is a polished surface, so that the orientation stage 200 can reflect the incident light.
[0056] In some embodiments, the orientation stage 200 is used to support a surface of the wafer 11 parallel to the light-transmitting area.
[0057] In some embodiments, the number of the at least one robot 400 is 2, and the two robots 400 are respectively located on both sides of the circumference of the orientation platform 200, and are used to independently grasp the wafer 11 from different directions.
[0058] In some embodiments, the at least one manipulator 400 , the orientation platform 200 , the first sensor 301 and the control system 303 are electrically connected.
[0059] refer to Figure 3The working process of the ion implantation equipment is as follows: before the orientation platform 200 and the at least one manipulator 400 are started, the orientation platform 200 is raised to the working position through the control system 303, and the sensor 301 of the detection device 300 emits incident light to the orientation platform 200, and senses the optical signal of the reflected light to determine whether the height of the working position is at a preset height. If the orientation platform 200 at the working position is at the preset height, the sensor 301 can obtain the optical signal of the reflected light and send a normal signal to the control system 303. After receiving the normal signal, the control system 303 starts the ion implantation equipment; if the orientation platform 200 at the working position is not at the preset height, the sensor cannot obtain the optical signal of the reflected light and sends an abnormal signal to the control system 303. After receiving the abnormal signal, the control system 303 issues a warning.
[0060] The beneficial effects of the ion implantation device provided by the embodiment of the present application include but are not limited to:
[0061] The ion implantation equipment provided in the present application is provided with a detection mechanism that can detect the position change of the orientation stage. When the height of the working position of the orientation stage is not at a preset height, the detection mechanism can send an abnormal signal to the control system, so that the control system issues an alarm, thereby promptly notifying the staff of the abnormal height of the working position of the orientation stage before the ion implantation equipment starts working, thereby avoiding scratches on the wafer surface due to the abnormal height of the orientation stage during the wafer transfer process.
[0062] It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects that may be produced may be any one or a combination of the above, or any other beneficial effects that may be obtained.
[0063] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only for example and does not constitute a limitation of this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements and corrections to this application. Such modifications, improvements and corrections are suggested in this specification, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of this application.
[0064] It should be noted that in the description of this application, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", and "fix" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a rotating connection or a sliding connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood in combination with specific circumstances.
[0065] In addition, when terms such as "first", "second", and "third" are used in the specification of this application to describe various features, these terms are only used to distinguish these features and cannot be understood as indicating or implying the relationship between the features, the relative importance, or implicitly indicating the number of features indicated.
[0066] In addition, the present specification describes exemplary embodiments by reference to idealized exemplary cross-sectional views and / or plan views and / or stereograms. Therefore, differences from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are foreseeable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but should include deviations in shapes caused by, for example, manufacturing. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device nor to limit the scope of the exemplary embodiments.
[0067] At the same time, the present application uses specific words to describe the embodiments of this specification. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in the present application does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.
[0068] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.
[0069] Finally, it should be understood that the embodiments described in this application are only used to illustrate the principles of the embodiments of the present application. Other variations may also fall within the scope of the present application. Therefore, as an example and not a limitation, the alternative configurations of the embodiments of the present application may be considered to be consistent with the teachings of the present application. Accordingly, the embodiments of the present application are not limited to the embodiments explicitly introduced and described in the present application.
Claims
1. A detection device for detecting the position change of a directional stage of an ion implantation device, characterized in that: It includes a sensor, a reflector and a control system, wherein the sensor and the reflector are arranged above the orientation platform. The sensor is configured to emit incident light to the surface of the orientation platform, the incident light is reflected by the surface of the orientation platform, vertically emitted to the surface of the reflector, and then reflected again by the reflector and the orientation platform in sequence to form reflected light. The sensor is also configured to acquire the optical signal of the reflected light, and send a normal signal to the control system when acquiring the optical signal of the reflected light, and the control system controls the ion implantation equipment to operate after receiving the normal signal; and the sensor sends an abnormal signal to the control system when the optical signal of the reflected light cannot be acquired, and the control system issues an alarm after receiving the abnormal signal.
2. The detection device according to claim 1, characterized in that: The orientation platform is arranged in the chamber, a light-transmitting area is arranged on the top of the chamber, and the sensor and the reflector are arranged above the light-transmitting area respectively.
3. The detection device according to claim 2, characterized in that: The sensor and the reflector are both fixedly connected to the chamber, and a first angle between the incident light emitted by the sensor and the top of the chamber is complementary to a second angle between the reflector and the top of the chamber.
4. The detection device according to claim 3, characterized in that: The second angle is 65-75°.
5. The detection device according to claim 2, characterized in that: The width of the reflector is 0.28-0.32 mm, and the width is the distance between one end of the reflector close to the top of the chamber and one end of the reflector far from the top of the chamber.
6. The detection device according to claim 5, characterized in that: A light shielding member which is retractable along the width direction of the reflector is arranged on a side of the reflector facing the light transmission area.
7. The detection device according to claim 6, characterized in that: The light shielding member includes an optical slit sheet.
8. The detection device according to claim 2, characterized in that: The reflector is a plane reflector, and a side of the reflector facing the light-transmitting area is a reflective surface.
9. The detection device according to claim 8, characterized in that: The plane reflecting mirror comprises a laser reflecting mirror.
10. An ion implantation device, characterized in that: include: The detection device according to any one of claims 1 to 9; Chamber; an orientation stage, disposed in the chamber and used to support the wafer, wherein the orientation stage is configured to be able to be lifted and lowered in a vertical direction; and A robot arm is used for grabbing the wafer from the orientation stage or placing the wafer on the orientation stage.