High-power H-bridge laminated bus unit

Abstract

The utility model belongs to the field of high-voltage commutation, and discloses a high-power H-bridge laminated bus unit, which not only can obviously reduce the material cost, but also can keep normal switching, and comprises a direct current side and an alternating current side, the direct current side comprises a positive pole row plate and a negative pole row plate, the alternating current side comprises an alternating current row plate, the positive pole row plate corresponds to the positive pole of a high-power H-bridge, and the negative pole row plate corresponds to the negative pole of the high-power H-bridge. The alternating-current row plate corresponds to the positive electrode of the high-power H bridge, the negative electrode row plate corresponds to the negative electrode of the high-power H bridge, the alternating-current row plate, the positive electrode row plate and the negative electrode row plate are sequentially arranged in a veneering manner, and the areas of the positive electrode row plate and the negative electrode row plate are different, that is, the alternating-current row plate, the positive electrode row plate and the negative electrode row plate are arranged in a three-layer stacking manner, so that the alternating-current row does not need to be stacked in order to correspond to half bridges of the high-power H bridge; in addition, due to the stacked layout, the gaps between the alternating current row plate and the direct current side are consistent, and the distances between the upper bridge arm structure and the lower bridge arm structure are consistent.

Description

Technical Field

[0001] The utility model belongs to the field of high-voltage commutation, and in particular relates to a high-power H-bridge laminated busbar unit. Background Art

[0002] In the field of high-voltage commutation, the laminated busbar is an indispensable component in SVG (reactive power compensation device, the same below) as a coupling element for commutation IGBT and external input and output. The laminated busbar couples the DC side and AC side of the high-power H-bridge with the outside through multiple plates.

[0003] The AC bus in the current laminated busbar adopts a stacked setting, that is, the AC bus is stacked and arranged with multi-polarity connection bars, which makes the area of ​​the AC bus larger and cannot be reduced, resulting in a large material cost; at the same time, the distances from the stacked AC bus to the upper and lower half bridges of the high-power H-bridge are not equal, resulting in an increase in the stacking distance between the positive and negative coupling circuits, resulting in a larger stray inductance, and the stray inductance is positively correlated with the overvoltage generated by the surge. Therefore, in the case of a large overvoltage input caused by the surge, the IGBT is easily damaged and cannot switch normally. Utility Model Content

[0004] In view of the shortcomings of the prior art, the utility model provides a high-power H-bridge laminated busbar unit, which can not only significantly reduce the material cost, but also reduce the stray inductance, thereby reducing the voltage generated by surges, so that the smaller overvoltage is not easy to damage the IGBT, thereby maintaining normal switching.

[0005] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0006] A high-power H-bridge laminated busbar unit, the high-power H-bridge is composed of four IGBTs, and is characterized in that it includes: a DC side, an external capacitor is coupled with the IGBT output through the DC side, and an AC side includes an AC plate, and the IGBT realizes AC output through the AC plate, wherein the DC side includes a positive plate and a negative plate, the positive plate corresponds to the positive electrode of the high-power H-bridge, and the negative plate corresponds to the negative electrode of the high-power H-bridge, the AC plate, the positive plate and the negative plate are arranged in sequence, and the positive plate and the negative plate have different areas.

[0007] Preferably, the four IGBTs are arranged in a "field" shape, with the external capacitor close to the two IGBTs at the negative pole of the high-power H-bridge and away from the two IGBTs at the positive pole of the high-power H-bridge, so that the widths of the positive and negative pole plates are the same, and the length of the positive pole plate is greater than that of the negative pole plate.

[0008] Furthermore, there are two AC plates, which are electrically connected to the two half-bridge structures of the high-power H-bridge respectively and are extended along the length direction of the positive plate. The AC plate has multiple conduction contact fingers, and the IGBT is coupled to the AC plate output through the conduction contact fingers.

[0009] Furthermore, the utility model also includes an insulating separator, which is arranged between the positive electrode plate and the negative electrode plate, and the insulating separator matches the negative electrode plate.

[0010] Compared with the prior art, the beneficial effects of the utility model are:

[0011] 1. Because the high-power H-bridge laminated busbar unit of the utility model includes a DC side and an AC side, the DC side includes a positive plate and a negative plate, and the AC side includes an AC plate, the positive plate corresponds to the positive pole of the high-power H-bridge, and the negative plate corresponds to the negative pole of the high-power H-bridge, the AC plate, the positive plate and the negative plate are arranged in sequence, and the negative plate has a different area from the negative plate, that is, through the three-layer stacking layout of the AC plate, the positive plate and the negative plate, the AC bus avoids the disadvantage of a stacking layout corresponding to the half bridge of the high-power H bridge, resulting in a large unfolding area of ​​the AC bus that cannot be reduced, and due to the stacking layout, the gap from the AC plate to the DC side is consistent, and the distance between the upper and lower bridge arm structures is consistent. Therefore, the utility model can not only significantly reduce the material cost, but also reduce the stray inductance, thereby reducing the voltage generated by the surge, so that the smaller overvoltage is not easy to damage the IGBT, and thus can maintain normal switching.

[0012] 2. Because the widths of the positive and negative electrode plates of the present invention are the same, and the length of the positive electrode plates is greater than that of the negative electrode plates, the present invention further reduces the commutation path from the IGBT to the external capacitor, so that the design size of the negative electrode plates can be further reduced, thereby further reducing the material cost.

[0013] 3. Because the utility model further includes an insulating partition, which is arranged between the positive electrode plate and the negative electrode plate, the utility model only needs one insulating partition, thereby further thinning the insulating structure and helping to reduce stray inductance. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is an implementation diagram of a high-power H-bridge laminated busbar unit according to an embodiment of the utility model;

[0015] Figure 2 A schematic diagram of a high-power H-bridge laminated busbar unit according to an embodiment of the utility model;

[0016] Figure 3 for Figure 2 Exploded diagram.

[0017] In the figure: 100, high-power H-bridge laminated busbar unit, B, water-cooling plate, 1, positive electrode plate, 2, negative electrode plate, 12a, DC coupling part, 12b, coupling part, 12d, contact finger via, 3, AC plate, 3a, conduction contact finger, 3b, external connection part, 4, insulating partition. DETAILED DESCRIPTION

[0018] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the following embodiments and drawings specifically illustrate the high-power H-bridge laminated busbar unit of the present invention. It should be noted that the description of these implementation methods is used to help understand the present invention, but does not constitute a limitation of the present invention.

[0019] like Figure 1 As shown, the high-power H-bridge laminated busbar unit 100 in this embodiment, the high-power H-bridge is composed of four IGBTs arranged in a "field" shape, and the two IGBTs as the anode of the high-power H-bridge and the two IGBTs as the cathode are arranged in a "sun" shape. Specifically, the high-power H-bridge is veneered on the water-cooled plate B, that is, the water-cooled plate B is used to dissipate the heat of the high-power H-bridge.

[0020] The high-power H-bridge is input-coupled with an external capacitor (not shown in the drawings), which is close to the two IGBTs at the negative pole of the high-power H-bridge and away from the two IGBTs at the positive pole of the high-power H-bridge.

[0021] like Figure 2 and Figure 3 As shown, the high-power H-bridge laminated busbar unit 100 includes a DC side (not shown in the drawings) and an AC side (not shown in the drawings).

[0022] The DC side includes a positive electrode plate 1 and a negative electrode plate 2 .

[0023] The positive plate 1 corresponds to the two IGBTs at the positive pole of the high-power H-bridge, and the negative plate 2 corresponds to the two IGBTs at the negative pole of the high-power H-bridge. The widths of the positive plate 1 and the negative plate 2 are the same, and the length of the positive plate 1 is greater than the length of the negative plate 2, so that the areas of the positive plate 1 and the negative plate 2 are different, and the external capacitor is coupled with the IGBT output through the DC side. Specifically, the positive plate 1 and the negative plate 2 both form a continuous DC coupling portion 12a, a coupling portion 12b and a finger via 12d. The DC coupling portion 12a is stepped by bending and is used to set the external capacitor; the coupling portion 12b is rectangular, and the coupling portions 12b of the positive plate 1 and the negative plate 2 form a double-layer structure. The negative plate 2 only corresponds to a part of the positive plate 1 in the layer height direction, and the finger vias 12d of the positive plate 1 and the negative plate 2 both correspond to the AC output of the IGBT.

[0024] Specifically, the positive electrode plate 1 and the negative electrode plate 2 also have access contacts (not shown in the drawings), and the positive electrode plate 1 and the negative electrode plate 2 are coupled to the positive and negative electrodes of the high-power H-bridge through the access contacts.

[0025] The AC side includes an AC plate 3 , and the IGBT realizes AC output through the AC plate 3 .

[0026] The AC plate 3, the positive plate 1 and the negative plate 2 are sequentially arranged face to face. Specifically, the AC plate 3, the positive plate 1 and the negative plate 3 are arranged in a three-layer stacked layout.

[0027] There are two AC plates 3, which are electrically connected to the two half-bridge structures of the high-power H-bridge respectively, and are extended along the length direction of the positive plate 1. Specifically, the two AC plates 3 are parallel, and one end of the AC plate 3 is set on the coupling portion 12b, and the other end exceeds the water-cooled plate B and forms an external connection portion 3b in the form of a folded edge. The external connection portion 3b is used to connect with an external circuit structure.

[0028] The AC busbar 3 has a plurality of conductive contact fingers 3 a , and the IGBT is coupled to the output of the AC busbar 3 via the conductive contact fingers 3 a . Specifically, the conductive contact fingers 3 a pass through the contact finger vias 12 d .

[0029] The insulating separator 4 is disposed between the positive electrode plate 1 and the negative electrode plate 2, and the insulating separator 4 matches the negative electrode plate 2, so that the coupling portion 12b of the positive electrode plate 1, the insulating separator 4 and the coupling portion 12b of the negative electrode plate 2 form a "sandwich" structure.

[0030] In this embodiment, compared with the prior art, the number of insulating partitions used is reduced, the total thickness is significantly reduced, and after multiple surge voltage impacts, the IGBT still maintains a good state, that is, it can be safely shut down.

[0031] The above-mentioned implementation modes are preferred cases of the present utility model and are not used to limit the protection scope of the present utility model. Various deformations or modifications that can be made by ordinary technicians in this field without creative work within the scope of the attached claims are still within the protection scope of this patent.

Claims

1. A high-power H-bridge laminated busbar unit, the high-power H-bridge is composed of four IGBTs, characterized in that: include: The DC side, through which the external capacitor is coupled with the IGBT output, The AC side includes an AC plate, through which the IGBT realizes AC output. The DC side includes a positive plate and a negative plate, the positive plate corresponds to the positive pole of the high-power H-bridge, the negative plate corresponds to the negative pole of the high-power H-bridge, the AC plate, the positive plate and the negative plate are sequentially arranged face to face, and the positive plate and the negative plate have different areas.

2. The high-power H-bridge laminated busbar unit according to claim 1, characterized in that: in, The four IGBTs are arranged in a "field" shape, and the external capacitor is close to the two IGBTs at the negative pole of the high-power H-bridge and away from the two IGBTs at the positive pole of the high-power H-bridge, so that the widths of the positive and negative pole plates are the same, and the length of the positive pole plate is greater than that of the negative pole plate.

3. The high-power H-bridge laminated busbar unit according to claim 2, characterized in that: in, The number of the AC plates is two, which are electrically connected to the two half-bridge structures of the high-power H-bridge respectively, and are extended along the length direction of the positive plate. The AC busbar has a plurality of conducting contact fingers, and the IGBT is coupled to the output of the AC busbar via the conducting contact fingers.

4. The high-power H-bridge laminated busbar unit according to claim 2, characterized in that: Also includes: The insulating separator is disposed between the positive electrode plate and the negative electrode plate, and the insulating separator matches the negative electrode plate.

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