Wafer warpage measurement system

Abstract

The utility model provides a wafer warpage measurement system. The wafer warpage measurement system comprises a measurement table, a warpage positive and negative measurement assembly, a warpage measurement assembly and a processing module, the warping degree measuring assembly comprises a light source emitter and a detector, the light source emitter and the detector are oppositely arranged on the symmetrical sides of the test wafer, the light source emitter is used for emitting light, and the detector is used for detecting the light and sending light receiving information; the warping degree positive and negative measurement assembly comprises a detection module, and the detection module is used for measuring a first distance between an outer ring test area of the test wafer and the measurement table and / or a second distance between an inner ring test area of the test wafer and the measurement table; and the processing module is electrically connected with the detector and the detection module, and is used for obtaining the warping degree of the test wafer according to the light receiving information and obtaining the positive and negative of the warping degree according to the first distance and the second distance. According to the utility model, the warpage of the wafer can be measured more comprehensively and rapidly, and the positive and negative warpage of the wafer can be measured at the same time.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, and in particular to a wafer warpage measurement system. Background Art

[0002] At present, semiconductor technology has been widely used in the fields of computers, network communications, consumer electronics, industrial control, etc., and silicon wafers play an important role in the development of this technology. However, after a series of high-temperature processes such as diffusion and oxidation, silicon wafers will cause warping, which will cause great interference to subsequent processes such as lithography, and the yield and performance of the device will also be greatly affected. Therefore, measuring the warpage of silicon wafers is a very important task.

[0003] The warpage of a wafer is generally understood as the difference between the maximum and minimum values ​​of the wafer surface from the reference plane. In addition, the conventional definition is that if the wafer is bent upward, the warpage is positive, and vice versa. The current method of measuring the warpage is to take a number of points along a fixed direction on the wafer surface and calculate the height difference between the points and a fixed height, thereby obtaining the highest and lowest points on the wafer surface. The warpage can then be obtained by the difference between the highest and lowest points. However, this method has the following disadvantages: (1) The sampling is time-consuming and cannot accurately measure the highest and lowest points of the entire wafer; (2) The positive and negative of the wafer warpage cannot be measured. Utility Model Content

[0004] The utility model aims to provide a wafer warpage measurement system, which can more comprehensively measure the highest point and the lowest point on the wafer surface, improve the speed of wafer warpage measurement, and can simultaneously measure the positive and negative of the wafer warpage.

[0005] To achieve the above-mentioned purpose, the wafer warpage measurement system of the utility model includes a measuring platform, a positive and negative warpage measurement component, a warpage measurement component and a processing module; the measuring platform is provided with a support column for supporting a test wafer, the test wafer includes an outer ring test area and an inner ring test area surrounded by the outer ring test area, and the support column is supported on the outer ring test area and / or the inner ring test area; the warpage measurement component includes a light source emitter and a detector, the light source emitter and the detector are relatively arranged on the symmetrical side of the test wafer, the light source emitter is used to emit light, and the detector is used to detect the light and send light reception information; the positive and negative warpage measurement component includes a detection module, the detection module is used to measure and obtain a first distance between the outer ring test area and the measuring platform, and / or a second distance between the inner ring test area and the measuring platform; the processing module is electrically connected to the detector and the detection module respectively, and the processing module is used to obtain the warpage of the test wafer according to the light reception information and obtain the positive and negative of the warpage according to the first distance and the second distance.

[0006] The beneficial effects of the wafer warpage measurement system of the utility model are as follows: the warpage measurement component includes a light source emitter and a detector, the light source emitter and the detector are relatively arranged on the symmetrical side of the test wafer, the light source emitter is used to emit light, the detector is used to detect the light and send light receiving information, the processing module is electrically connected to the detector to obtain the warpage of the test wafer according to the light receiving information, that is, using optical measurement of wafer warpage, the highest point and the lowest point on the wafer surface can be measured more comprehensively, and the speed of wafer warpage measurement is improved; the warpage positive and negative measurement component includes a detection module, the test wafer includes an outer ring test area formed by the The inner circle test area is surrounded by the outer circle test area, and the detection module is used to measure the first distance between the outer circle test area and the measuring platform, and / or the second distance between the inner circle test area and the measuring platform. The processing module is electrically connected to the detection module to obtain the positive and negative of the warpage according to the first distance and the second distance, that is, the processing module analyzes and compares the size of the first distance and the second distance or the positive and negative of the difference between the first distance and the second distance to determine the positive and negative of the warpage, so as to know whether the test wafer is warped upward or downward; the wafer warpage measurement system in the utility model can simultaneously measure the warpage of the test wafer and the positive and negative of the warpage.

[0007] Preferably, the detection modules are provided in several groups, each group of the detection modules includes at least one detection unit, the detection units in the same group of the detection modules are arranged within a certain arc range along the circumference of the measuring platform, and several groups of the detection modules are arranged with different radii with the center of the circle of the measuring platform as the center. The beneficial effect is that the first distance between the outer ring test area and the measuring platform, and / or the second distance between the inner ring test area and the measuring platform can be measured more comprehensively, which is conducive to improving the accuracy of positive and negative measurement of wafer warpage.

[0008] Preferably, the wafer warpage measurement system further includes a storage module, the storage module is connected to the processing module, the storage module is used to store the height of the support column, the support column is used to support any one of the outer ring test area and the inner ring test area, and the detection module is used to measure the distance between the other of the outer ring test area and the inner ring test area and the measuring platform. Its beneficial effect is that: by storing the height of the support column through the storage module, the distance between any one of the outer ring test area and the inner ring test area and the measuring platform is a known value, and then the distance between the other of the outer ring test area and the inner ring test area and the measuring platform is measured to analyze the positive and negative of the wafer warpage, so that the number of detection modules put into use is reduced, and less data needs to be collected, which is conducive to improving the speed of positive and negative measurement of wafer warpage and the speed of result analysis.

[0009] Preferably, the detection unit includes at least one of a distance measuring sensor and a height measuring instrument. The beneficial effect is that the distance between the outer ring test area and / or the inner ring test area and the measuring table is automatically measured using the distance measuring sensor and / or the height measuring instrument, thereby improving the speed of positive and negative measurement of the wafer warpage.

[0010] Preferably, the measuring platform includes an outer ring measuring part and an inner ring measuring part surrounded by the outer ring measuring part, the outer ring measuring part is arranged opposite to the outer ring test area, and the inner ring measuring part is arranged opposite to the inner ring test area; the detection unit includes a distance measuring sensor, the distance measuring sensor is arranged at the outer ring measuring part to measure the first distance, and / or the distance measuring sensor is arranged at the inner ring measuring part to measure the second distance. Its beneficial effect is that the distance measuring sensor is arranged at the outer ring measuring part to measure the first distance between the part of the outer ring test area corresponding to the distance measuring sensor and the outer ring measuring part, and / or the distance measuring sensor is arranged at the inner ring measuring part to measure the second distance between the part of the inner ring test area corresponding to the distance measuring sensor and the inner ring measuring part, and the distance measuring sensor is used to automatically measure the distance between the outer ring test area and / or the inner ring test area and the measuring platform, thereby improving the speed of positive and negative measurement of wafer warpage.

[0011] Preferably, the measuring platform includes an outer ring measuring part and an inner ring measuring part surrounded by the outer ring measuring part, the outer ring measuring part is arranged opposite to the outer ring test area, and the inner ring measuring part is arranged opposite to the inner ring test area; the support column includes an outer ring support column and an inner ring support column, the outer ring support column is arranged at the outer ring measuring part to support the outer ring test area, and the inner ring support column is arranged at the inner ring measuring part to support the inner ring test area; the detection unit includes a height measuring meter, the height measuring meter is arranged at the outer ring support column to measure the first distance, and / or the height measuring meter is arranged at the inner ring support column to measure the second distance. Its beneficial effects are: the first distance is obtained by setting the height measuring instrument on the outer ring support column to measure the height of the outer ring support column, and / or the second distance is obtained by setting the height measuring instrument on the inner ring support column to measure the height of the inner ring support column. The height measuring instrument is used to automatically measure the distance between the outer ring test area and / or the inner ring test area and the measuring table, thereby improving the speed of positive and negative measurement of wafer warpage.

[0012] Preferably, the distance measuring sensor is embedded in the surface of the measuring platform, and the upper surface of the distance measuring sensor is flush with the upper surface of the measuring platform. The beneficial effect is that it is conducive to improving the accuracy of positive and negative measurement of wafer warpage.

[0013] Preferably, the warpage positive and negative measurement component also includes a height adjustment component, the height adjustment component is arranged on the outer ring support column or the inner ring support column, the height adjustment component includes a height adjustment member and a touch detection member, the touch detection member and the height adjustment member are electrically connected to the processing module respectively, the height adjustment member is used to adjust the height of the support column, and the touch detection member is arranged on the top of the support column to detect whether the support column is in contact with the test wafer. Its beneficial effect is: automatic detection and adjustment is conducive to improving the speed and accuracy of wafer warpage and wafer warpage positive and negative measurement.

[0014] Preferably, the detection unit further comprises a connecting rod, one end of which is sleeved on the outer ring support column and / or the inner ring support column, the other end of which is fixed to the height measuring instrument, and the connecting rod is extended along the radial direction of the measuring platform toward the outer edge of the outer ring measuring part. The beneficial effect is that it is conducive to improving the accuracy of positive and negative measurement of wafer warpage, and avoiding interference with the support column supporting the test wafer.

[0015] Preferably, the wafer warpage measurement system further includes a storage module, which is connected to the processing module, and is used to store the thickness of a reference wafer, wherein the reference wafer is a wafer without warpage. The beneficial effect is that the thickness of the reference wafer is stored in the storage module, and the warpage of the test wafer can be calculated by combining the highest point and the lowest point of the test wafer measured by the detector, that is, only one wafer without warpage needs to be selected as a reference wafer from wafers of the same batch thickness and the thickness of the reference wafer needs to be stored, which is conducive to improving the speed of wafer warpage measurement and result analysis. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the frame structure of a wafer warpage measurement system according to an embodiment of the utility model;

[0017] Figure 2 A schematic diagram of a wafer warpage measurement system according to an embodiment of the present invention measuring a test wafer that is warped upward;

[0018] Figure 3 A schematic diagram of a wafer warpage measurement system according to an embodiment of the present invention measuring a test wafer that is warped downward;

[0019] Figure 4 This is a schematic diagram of the distribution of support columns on the measuring table in the wafer warpage measurement system of the utility model;

[0020] Figure 5 This is a schematic diagram of the distribution of distance measuring sensors on a measuring table in a wafer warpage measurement system according to a first embodiment of the utility model;

[0021] Figure 6 This is a schematic diagram of the distribution of distance measuring sensors on a measuring table in a wafer warpage measurement system according to a second embodiment of the utility model;

[0022] Figure 7 This is a schematic diagram of the distribution of distance measuring sensors on a measuring table in a wafer warpage measurement system according to a third embodiment of the utility model. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the utility model belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0024] To overcome the problems existing in the prior art, an embodiment of the utility model provides a wafer warpage measurement system that can more comprehensively measure the highest and lowest points on the wafer surface, improve the speed of wafer warpage measurement, and can simultaneously measure the positive and negative values ​​of the wafer warpage.

[0025] Figure 1 It is a schematic diagram of the frame structure of a wafer warpage measurement system according to an embodiment of the utility model; Figure 2 A schematic diagram of a wafer warpage measurement system according to an embodiment of the present invention measuring a test wafer that is warped upward; Figure 3 FIG. 1 is a schematic diagram of a wafer warpage measurement system according to an embodiment of the present invention measuring a test wafer that is warped downward.

[0026] In some embodiments of the present invention, reference Figures 1 to 3The wafer warpage measurement system includes a warpage positive and negative measurement component 1, a warpage measurement component 2, a processing module 3 and a measurement platform 4. The measurement platform 4 is provided with a support column 6 for supporting a test wafer 5, wherein the test wafer 5 includes an outer ring test area 51 and an inner ring test area 52 surrounded by the outer ring test area 51, and the support column 6 is supported on the outer ring test area 51 and / or the inner ring test area 52; the warpage measurement component 2 includes a light source emitter 21 and a detector 22, wherein the light source emitter 21 and the detector 22 are relatively arranged on the symmetrical side of the test wafer 5, wherein the light source emitter 21 is used to emit light, and the detector 22 is used to detect the light and sends light receiving information; the warpage positive and negative measurement component 1 includes a detection module 11, and the detection module 11 is used to measure the first distance between the outer circle test area 51 and the measuring platform 4, and / or the second distance between the inner circle test area 52 and the measuring platform 4; the processing module 3 is electrically connected to the detector 22 and the detection module 11 respectively, and the processing module 3 is used to obtain the warpage of the test wafer 5 according to the light receiving information and obtain the positive and negative of the warpage according to the first distance and the second distance.

[0027] Specifically, the warpage measurement component 2 includes a light source emitter 21 and a detector 22, the light source emitter 21 and the detector 22 are relatively arranged on the symmetrical side of the test wafer 5, the light source emitter 21 is used to emit light, the detector 22 is used to detect the light and send light receiving information, the processing module 3 is electrically connected to the detector 22 to obtain the warpage of the test wafer 5 according to the light receiving information, that is, using optical measurement of wafer warpage, the highest point and the lowest point on the wafer surface can be more comprehensively measured, and the speed of wafer warpage measurement is improved; the warpage positive and negative measurement component 1 includes a detection module 11, the test wafer 5 includes an outer ring test area 51 formed by the outer ring test area 5 1, the detection module 11 is used to measure a first distance between the outer circle test area 51 and the measuring platform 4, and / or a second distance between the inner circle test area 52 and the measuring platform 4, the processing module 3 is electrically connected to the detection module 11 to obtain the positive or negative of the warpage according to the first distance and the second distance, that is, the processing module 3 analyzes and compares the size of the first distance and the second distance or the positive or negative of the difference between the first distance and the second distance to determine the positive or negative of the warpage, so as to know whether the test wafer is warped upward or downward; the wafer warpage measurement system in the utility model can simultaneously measure the warpage of the test wafer and the positive or negative of the warpage.

[0028] In an embodiment of the utility model, when the processing module analyzes and compares the magnitude of the first distance and the second distance or the positive or negative difference between the first distance and the second distance, it may be a comparison of the average values ​​of the two, or a comparison of multiple values ​​separately. If N detection units respectively measure the distance between different parts of the outer ring test area and the measuring platform, N first sub-distances will be obtained, and M detection units respectively measure the distance between different parts of the inner ring test area and the measuring platform, M second sub-distances will be obtained. The first distance is equal to the average value of N first sub-distances, and the second distance is equal to the average value of M second sub-distances. The processing module compares the average value of N first sub-distances with the average value of M second sub-distances or calculates the difference. Or the processing module compares the N first sub-distances with each second sub-distance or calculates the difference. Or the processing module compares the N first sub-distances with the average value of M second sub-distances or calculates the difference. Or the processing module compares the N first sub-distances with the average value of M second sub-distances or calculates the difference. Or the processing module compares the M second sub-distances with the average value of N first sub-distances or calculates the difference. The N and the M are positive integers greater than or equal to 1.

[0029] In some embodiments of the utility model, the wafer warpage measurement system further includes a storage module 7, which is connected to the processing module 3, and the storage module 7 is used to store the thickness of the reference wafer, which is a wafer without warpage. The thickness of the reference wafer is stored in the storage module 7, and the warpage of the test wafer can be calculated by combining the highest point and the lowest point of the test wafer measured by the detector 22, that is, only one wafer without warpage needs to be selected as a reference wafer from the wafers of the same batch thickness and the thickness of the reference wafer can be stored, which is conducive to improving the wafer warpage measurement speed and result analysis speed. Specifically, the low light intensity signal in the signal received by the detector is the signal of the light blocked by the wafer, so the processor can analyze the difference between the highest point and the lowest point of the whole wafer according to the received light reception signal, that is, the light intensity signal strength, and then subtract the thickness of the reference wafer from the difference to obtain the warpage of the test wafer.

[0030] In some embodiments of the utility model, the detection unit includes at least one of a distance sensor and a height measuring instrument. That is, the distance between the outer ring test area and / or the inner ring test area and the measuring table is automatically measured using the distance sensor and / or the height measuring instrument, thereby improving the speed of positive and negative measurement of the wafer warpage.

[0031] In some embodiments of the present invention, reference Figure 1The wafer warpage measurement system further includes a storage module 7, which is connected to the processing module 3. The storage module 7 is used to store the height of the support column 6, and the support column 6 is used to support any one of the outer ring test area 51 and the inner ring test area 52. The detection module 11 is used to measure the distance between the other of the outer ring test area 51 and the inner ring test area 52 and the measuring platform 4. The height of the support column 6 is stored in the storage module 7, so that the distance between any one of the outer ring test area 51 and the inner ring test area 52 and the measuring platform 4 is a known value, and then the distance between the other of the outer ring test area 51 and the inner ring test area 52 and the measuring platform 4 is measured to analyze the positive and negative of the wafer warpage, so that the number of detection modules 11 put into use is reduced, and less data needs to be collected, which is conducive to improving the speed of positive and negative measurement of wafer warpage and the speed of result analysis.

[0032] Figure 4 The figure is a schematic diagram of the distribution of support columns on the measuring table in the wafer warpage measurement system of the present invention.

[0033] In some embodiments of the present invention, reference Figures 2 to 4 The measuring platform 4 includes an outer ring measuring part 41 and an inner ring measuring part 42 surrounded by the outer ring measuring part 41, the outer ring measuring part 41 is arranged opposite to the outer ring test area 51, and the inner ring measuring part 42 is arranged opposite to the inner ring test area 52; the supporting column 6 includes an outer ring supporting column 61 and an inner ring supporting column 62, the outer ring supporting column 61 is arranged on the outer ring measuring part 41 to support the outer ring test area 51, and the inner ring supporting column 62 is arranged on the inner ring measuring part 42 to support the inner ring test area 52; the detection module 11 includes a height measuring instrument (not shown in the figure), the height measuring instrument (not shown in the figure) is arranged on the outer ring supporting column 61 to measure the first distance, and / or the height measuring instrument (not shown in the figure) is arranged on the inner ring supporting column 62 to measure the second distance. That is, the height measuring instrument (not shown in the figure) is set on the outer ring support column 61 to measure the height of the outer ring support column 61 to obtain the first distance, and / or the height measuring instrument (not shown in the figure) is set on the inner ring support column 62 to measure the height of the inner ring support column 62 to obtain the second distance. The use of a height measuring instrument (not shown in the figure) can automatically measure the distance between the outer ring test area 51 and / or the inner ring test area 52 and the measuring table 4, thereby improving the speed of positive and negative measurement of wafer warpage.

[0034] In some embodiments of the present invention, the inner circle measuring portion 42 is cocentrically arranged with the inner circle testing area 52 , and the outer circumference of the outer circle measuring portion 41 is aligned with the outer circumference of the outer circle testing area 51 .

[0035] In some specific embodiments of the present utility model, reference Figures 1 to 4 , the height measuring instrument (not shown in the figure) is arranged on the outer ring support column 61 to measure the first distance, and the height measuring instrument (not shown in the figure) is arranged on the inner ring support column 62 to measure the second distance. In this way, the processing module 3 compares and analyzes the height of the outer ring support column 61 measured by the height measuring instrument (not shown in the figure), that is, the first distance, and the height of the inner ring support column 62 measured by the height measuring instrument (not shown in the figure), that is, the second distance, to obtain the positive and negative of the warpage of the test wafer. This embodiment is conducive to improving the accuracy of positive and negative measurement of wafer warpage.

[0036] In some other specific embodiments of the present invention, reference is made to Figures 1 to 4 , the storage module 7 stores the height of the outer ring support column 61, that is, the first distance between the outer ring test area 51 and the measuring platform 4 is a known value. The height measuring instrument (not shown in the figure) is set on the inner ring support column 62 to measure the second distance. In this way, the processing module 3 calls the height of the outer ring support column 61 stored in the storage module 7, that is, the first distance, and then compares and analyzes the first distance with the height of the inner ring support column 62 measured by the height measuring instrument (not shown in the figure), that is, the second distance, to obtain the positive and negative warpage of the test wafer. This embodiment can reduce the number of height measuring instruments put into use, so that less data needs to be collected, which is conducive to improving the speed of positive and negative measurement of wafer warpage and the speed of result analysis.

[0037] In some specific embodiments of the present invention, reference is made to Figures 1 to 4 , the storage module 7 stores the height of the inner ring support column 62, that is, the second distance between the inner ring test area 52 and the measuring platform 4 is a known value. The height measuring instrument (not shown in the figure) is set on the outer ring support column 61 to measure the first distance. In this way, the processing module 3 calls the height of the inner ring support column 62 stored in the storage module 7, that is, the second distance, and then compares and analyzes the second distance with the height of the outer ring support column 61 measured by the height measuring instrument (not shown in the figure), that is, the first distance, to obtain the positive and negative warpage of the test wafer. This embodiment can reduce the number of height measuring instruments put into use, so that less data needs to be collected, which is conducive to improving the speed of positive and negative measurement of wafer warpage and the speed of result analysis.

[0038] In some embodiments of the utility model, the detection unit also includes a connecting rod, one end of the connecting rod is sleeved on the outer ring support column and / or the inner ring support column, the other end of the connecting rod is fixed to the height measuring instrument, and the connecting rod is extended along the radial direction of the measuring platform toward the outer edge of the outer ring measuring part, which is beneficial to improving the accuracy of positive and negative measurement of wafer warpage and avoiding interference with the support column supporting the test wafer.

[0039] In some specific embodiments of the utility model, one end of the connecting rod is sleeved on the outer ring support column, and the other end of the connecting rod is fixed to the height measuring instrument to measure the height of the outer ring support column, that is, the first distance; one end of the connecting rod is sleeved on the inner ring support column, and the other end of the connecting rod is fixed to the height of the inner ring support column measured by the height measuring instrument, that is, the second distance; the processing module can obtain the positive or negative value of the warping of the test wafer by comparing and analyzing the measured first distance with the measured second distance.

[0040] In some other specific embodiments of the utility model, one end of the connecting rod is sleeved on the inner ring support column, and the other end of the connecting rod is fixed to the height measuring instrument to measure the height of the inner ring support column, that is, the second distance; the processing module calls the height of the outer ring support column stored in the storage module, that is, the first distance, and then compares and analyzes the first distance with the measured second distance to obtain the positive or negative value of the warping of the test wafer.

[0041] In some specific embodiments of the utility model, one end of the connecting rod is sleeved on the outer ring support column, and the other end of the connecting rod is fixed to the height measuring instrument to measure the height of the outer ring support column, that is, the first distance; the processing module calls the height of the inner ring support column stored in the storage module, that is, the second distance, and then compares and analyzes the second distance with the measured first distance to obtain the positive and negative warpage of the test wafer. This embodiment can not only reduce the number of height measuring instruments put into use, so that less data needs to be collected, which is conducive to improving the speed of positive and negative measurement of wafer warpage and the speed of result analysis, but also the height measuring instrument can avoid interfering with other support columns supporting the test wafer by sleeved on the outer ring support column with one end of the connecting rod.

[0042] In some specific embodiments of the present invention, the connecting rod is a telescopic member.

[0043] In some embodiments of the present invention, reference Figure 1The warpage positive and negative measurement component 1 also includes a height adjustment component 12, and the height adjustment component 12 is arranged on the outer ring support column 61 or the inner ring support column 62. The height adjustment component 12 includes a height adjustment member 121 and a touch detection member 122. The touch detection member 122 and the height adjustment member 121 are electrically connected to the processing module 3 respectively. The height adjustment member 121 is used to adjust the height of the support column, that is, the height adjustment member 121 is used to adjust the height of the support column provided with the height adjustment member 121. The touch detection member 122 is arranged on the top of the support column to detect whether the support column is in contact with the test wafer 5, that is, the touch detection member 122 is used to detect whether the support column provided with the touch detection member 122 is in contact with the test wafer 5. Automatic detection and adjustment are beneficial to improving the speed and accuracy of wafer warpage and wafer warpage positive and negative measurement. That is, the same support column is provided with the height adjustment member 121 and the touch detection member 122 at the same time, so that the processing module can drive the height adjustment member 121 to adjust the height of the support column according to the touch information between the support column and the test wafer detected by the touch detection member 122 .

[0044] In some embodiments of the utility model, the outer ring support column is provided with a first height adjustment member, and a first touch detection member is provided on the top of the outer ring support column to detect whether the outer ring support column is in contact with the test wafer. During the test, the inner ring support column is first raised to support the test wafer, and then the outer ring support column is raised. When the outer ring support column is in contact with the test wafer, the first touch detection member sends a first touch information to the processing module, and the processing module receives the first touch information and sends a stop instruction to the first height adjustment member to drive the first height adjustment member to stop adjusting the height of the outer ring support column.

[0045] In some other embodiments of the utility model, the inner ring support column is provided with a second height adjustment member, and a second touch detection member is provided on the top of the inner ring support column to detect whether the inner ring support column is in contact with the test wafer. During the test, the outer ring support column is first raised to support the test wafer, and then the inner ring support column is raised. When the inner ring support column is in contact with the test wafer, the second touch detection member sends a second touch information to the processing module, and the processing module receives the second touch information and sends a stop command to the second height adjustment member to drive the second height adjustment member to stop adjusting the height of the inner ring support column. Raising the outer ring support column first to support the test wafer, and then raising the inner ring support column, will make the test wafer rise more stably.

[0046] In some embodiments of the present invention, the touch detection element is at least one of a pressure-sensitive element, a pressure sensor and a distance-measuring sensor.

[0047] In some specific embodiments of the utility model, the touch detection element is a pressure-sensitive element or a pressure sensor. Since the touch detection element is arranged at the top of the outer ring support column or the top of the inner ring support column, when the outer ring support column or the inner ring support column contacts the test wafer, the pressure-sensitive element or the pressure sensor will generate pressure information and send it to the processing module.

[0048] In some other specific embodiments of the utility model, the touch detection element is a distance measuring sensor. Since the touch detection element is arranged at the top of the outer ring support column or the top of the inner ring support column, when the outer ring support column or the inner ring support column is in contact with the test wafer, the distance measured by the distance measuring sensor is 0; and when the outer ring support column or the inner ring support column is not in contact with the test wafer, the distance measured by the distance measuring sensor is greater than 0.

[0049] In some specific embodiments of the present invention, the height adjusting member is a cylinder or the like.

[0050] Figure 5 This is a schematic diagram of the distribution of distance measuring sensors on a measuring table in a wafer warpage measurement system according to a first embodiment of the utility model; Figure 6 This is a schematic diagram of the distribution of distance measuring sensors on a measuring table in a wafer warpage measurement system according to a second embodiment of the utility model; Figure 7 This is a schematic diagram of the distribution of distance measuring sensors on a measuring table in a wafer warpage measurement system according to a third embodiment of the utility model.

[0051] In some embodiments of the present invention, reference Figure 1 , Figures 5 to 7The measuring platform 4 includes an outer circle measuring part 41 and an inner circle measuring part 42 surrounded by the outer circle measuring part 41, the outer circle measuring part 41 is arranged opposite to the outer circle test area 51, and the inner circle measuring part 42 is arranged opposite to the inner circle test area 52; the detection module 11 includes a distance measuring sensor (not shown in the figure), the distance measuring sensor (not shown in the figure) is arranged in the outer circle measuring part 41 to measure the first distance, and / or the distance measuring sensor (not shown in the figure) is arranged in the inner circle measuring part 42 to measure the second distance. That is, the distance measuring sensor (not shown in the figure) is arranged on the outer circle measuring part 41 to measure the first distance between the portion of the outer circle test area 51 corresponding to the distance measuring sensor (not shown in the figure) and the outer circle measuring part 41, and / or the distance measuring sensor (not shown in the figure) is arranged on the inner circle measuring part 42 to measure the second distance between the portion of the inner circle test area 52 corresponding to the distance measuring sensor (not shown in the figure) and the inner circle measuring part 42. The distance between the outer circle test area 51 and / or the inner circle test area 52 and the measuring table 4 is automatically measured using the distance measuring sensor (not shown in the figure), thereby improving the speed of positive and negative measurement of wafer warpage.

[0052] In some specific embodiments of the present utility model, reference Figure 5 , the detection module 11 includes a first distance measuring sensor 111 and a second distance measuring sensor 112, the first distance measuring sensor 111 is arranged in the outer ring measuring part 41 to measure the first distance between the outer ring measuring part 41 and the outer ring test area 51, and the second distance measuring sensor 112 is arranged in the inner ring measuring part 42 to measure the second distance between the inner ring measuring part 42 and the inner ring test area 52. In this way, the processing module 3 compares and analyzes the first distance measured by the first distance measuring sensor 111 with the second distance measured by the second distance measuring sensor 112 to obtain the positive and negative of the warpage of the test wafer. This embodiment is conducive to improving the accuracy of positive and negative measurement of wafer warpage. In this embodiment, the support column 6 is supported by the outer ring test area 51 and / or the inner ring test area 52.

[0053] In some other specific embodiments of the present invention, reference is made to Figure 6, the support column 6 is supported on the outer circle test area 51, and the storage module 7 stores the height of the support column 6, that is, the first distance between the outer circle test area 51 and the outer circle measurement part 41 is a known value. The detection module 11 includes a second distance sensor 112, and the second distance sensor 112 is arranged in the inner circle measurement part 42 to measure the second distance between the inner circle measurement part 42 and the inner circle test area 52. In this way, the processing module 3 can obtain the positive and negative warpage of the test wafer by calling the height of the support column 6 stored in the storage module 7, that is, the first distance, and then comparing and analyzing the first distance with the second distance measured by the second distance sensor 112. This embodiment can reduce the number of distance sensors put into use, so that less data needs to be collected, which is conducive to improving the speed of positive and negative measurement of wafer warpage and the speed of result analysis.

[0054] In some specific embodiments of the present invention, reference is made to Figure 7 , the support column 6 is supported on the inner circle test area 52, and the storage module 7 stores the height of the support column 6, that is, the second distance between the inner circle test area 52 and the inner circle measurement part 42 is a known value. The detection module 11 includes a first distance sensor 111, and the first distance sensor 111 is arranged on the outer circle measurement part 41 to measure the first distance between the outer circle measurement part 41 and the outer circle test area 51. In this way, the processing module 3 calls the height of the support column 6 stored in the storage module 7, that is, the second distance, and then compares and analyzes the second distance with the first distance measured by the first distance sensor 111, so as to obtain the positive and negative of the warpage of the test wafer. This embodiment can reduce the number of distance sensors put into use, so that less data needs to be collected, which is conducive to improving the speed of positive and negative measurement of wafer warpage and the speed of result analysis.

[0055] In some embodiments of the utility model, the distance measuring sensor is embedded in the surface of the measuring platform, and the upper surface of the distance measuring sensor is arranged flush with the upper surface of the measuring platform, which is beneficial to improving the accuracy of positive and negative measurement of wafer warpage.

[0056] In some embodiments of the utility model, the detection module is provided with several groups, each group of the detection modules includes at least one detection unit, the detection units in the same group of the detection modules are arranged within a certain arc range along the circumference of the measuring platform, and several groups of the detection modules are arranged with different radii with the center of the measuring platform as the center of the circle. The first distance between the outer ring test area and the measuring platform, and / or the second distance between the inner ring test area and the measuring platform can be more comprehensively measured, which is conducive to improving the accuracy of positive and negative measurement of wafer warpage.

[0057] In some specific embodiments of the present utility model, reference Figure 7 The detection module is provided with two groups, namely, a first detection module 101 and a second detection module 102, and the first detection module 101 and the second detection module 102 are arranged on the outer circle measurement part 41 with the center of the circle of the measuring platform 4 as the center and different radii. The first detection module 101 and the second detection module 102 are both provided with 6 first distance measuring sensors 111, and the 6 first distance measuring sensors 111 in the first detection module 101 are arranged along the circumference of the measuring platform 4, and the 6 first distance measuring sensors 111 in the second detection module 102 are arranged along the circumference of the measuring platform 4.

[0058] In some other specific embodiments of the present invention, reference is made to Figure 6 The detection module is provided with two groups, namely the third detection module 103 and the fourth detection module 104, and the third detection module 103 and the fourth detection module 104 are arranged on the inner circle measurement part 42 with the center of the circle of the measuring platform as the center and different radii. The third detection module 103 and the fourth detection module 104 are both provided with four first distance measuring sensors 111, and the four first distance measuring sensors 111 in the third detection module 103 are arranged along the circumference of the measuring platform, and the four first distance measuring sensors 111 in the fourth detection module 104 are arranged along the circumference of the measuring platform.

[0059] In some specific embodiments of the present invention, reference is made to Figure 5 , the detection module is provided with 4 groups, namely the first detection module 101, the second detection module 102, the third detection module 103 and the fourth detection module 104, the 4 groups of the detection modules are arranged with the center of the circle of the measuring platform 4 as the center and different radii, and the first detection module 101 and the second detection module 102 are arranged in the outer circle measurement part 41, and the third detection module 103 and the fourth detection module 104 are arranged in the inner circle measurement part 42. The first detection module 101 and the second detection module 102 are both provided with 6 first distance measuring sensors 111, and the first distance measuring sensors 111 of the same group are arranged along the circumference of the measuring platform. The third detection module 103 and the fourth detection module 104 are both provided with 6 second distance measuring sensors 112, and the second distance measuring sensors 112 of the same group are arranged along the circumference of the measuring platform.

[0060] In some specific embodiments of the present invention, the detection module is provided with three groups, namely, a first detection module, a second detection module and a third detection module. The first detection module includes three first height measuring instruments, the second detection module includes four second height measuring instruments, and the third detection module includes one third height measuring instrument. The first height measuring instrument is arranged on the outer ring support column 61, and the second height measuring instrument and the third height measuring instrument are arranged on the inner ring support column 62. Figure 4 , three of the outer ring support columns 61 are arranged on the outer ring measuring part 41, four of the inner ring support columns 62 are arranged on the inner ring measuring part 42, and another inner ring support column 62 is arranged at the center of the inner ring measuring part 42, so that the three first height measuring instruments are arranged on the outer ring measuring part 41 along the circumference of the measuring platform 4, the four second height measuring instruments are arranged on the inner ring measuring part 42 within a certain arc range along the circumference of the measuring platform 4, and the third height measuring instrument is arranged at the center of the inner ring measuring part 42.

[0061] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A wafer warpage measurement system, characterized in that: include: A measuring table, provided with a support column for supporting a test wafer, wherein the test wafer comprises an outer ring test area and an inner ring test area surrounded by the outer ring test area, and the support column is supported on the outer ring test area and / or the inner ring test area; A warpage measurement component, comprising a light source emitter and a detector, wherein the light source emitter and the detector are relatively arranged on symmetrical sides of the test wafer, the light source emitter is used to emit light, and the detector is used to detect the light and send light reception information; The warpage positive and negative measurement component comprises a detection module, wherein the detection module is used to measure a first distance between the outer ring test area and the measurement platform, and / or a second distance between the inner ring test area and the measurement platform; A processing module is electrically connected to the detector and the detection module respectively, and is used to obtain the warpage of the test wafer according to the light receiving information and to obtain the positive or negative value of the warpage according to the first distance and the second distance.

2. The wafer warpage measurement system according to claim 1, characterized in that: The detection modules are provided in several groups, each group of the detection modules includes at least one detection unit, the detection units in the same group of the detection modules are arranged within a certain arc range along the circumference of the measuring platform, and several groups of the detection modules are arranged with different radii with the center of the measuring platform as the center.

3. The wafer warpage measurement system according to claim 1, wherein: It also includes a storage module, which is connected to the processing module, and the storage module is used to store the height of the support column, and the support column is used to support any one of the outer circle test area and the inner circle test area. The detection module is used to measure the distance between the other one of the outer circle test area and the inner circle test area and the measuring platform.

4. The wafer warpage measurement system according to claim 2, wherein: The detection unit includes at least one of a distance measuring sensor and an altitude measuring instrument.

5. The wafer warpage measurement system according to claim 2, wherein: The measuring platform comprises an outer ring measuring part and an inner ring measuring part surrounded by the outer ring measuring part, the outer ring measuring part is arranged opposite to the outer ring test area, and the inner ring measuring part is arranged opposite to the inner ring test area; The detection unit includes a distance measuring sensor, the distance measuring sensor is arranged at the outer circle measuring part to measure the first distance, and / or the distance measuring sensor is arranged at the inner circle measuring part to measure the second distance.

6. The wafer warpage measurement system according to claim 2, wherein: The measuring platform comprises an outer ring measuring part and an inner ring measuring part surrounded by the outer ring measuring part, the outer ring measuring part is arranged opposite to the outer ring test area, and the inner ring measuring part is arranged opposite to the inner ring test area; The support column comprises an outer ring support column and an inner ring support column, the outer ring support column is arranged at the outer ring measurement part to support the outer ring test area, and the inner ring support column is arranged at the inner ring measurement part to support the inner ring test area; The detection unit includes a height measuring instrument, which is arranged on the outer ring support column to measure the first distance, and / or the height measuring instrument is arranged on the inner ring support column to measure the second distance.

7. The wafer warpage measurement system according to claim 5, characterized in that: The distance measuring sensor is embedded in the surface of the measuring platform, and the upper surface of the distance measuring sensor is flush with the upper surface of the measuring platform.

8. The wafer warpage measurement system according to claim 6, wherein: The warpage positive and negative measurement component also includes a height adjustment component, which is arranged on the outer ring support column or the inner ring support column. The height adjustment component includes a height adjustment member and a touch detection member, and the touch detection member and the height adjustment member are electrically connected to the processing module respectively. The height adjustment member is used to adjust the height of the support column, and the touch detection member is arranged on the top of the support column to detect whether the support column is in contact with the test wafer.

9. The wafer warpage measurement system according to claim 6, wherein: The detection unit also includes a connecting rod, one end of which is sleeved on the outer ring support column and / or the inner ring support column, the other end of which fixes the height measuring instrument, and the connecting rod extends along the radial direction of the measuring platform toward the outer edge of the outer ring measuring part.

10. The wafer warpage measurement system according to claim 1, wherein: It also includes a storage module, which is connected to the processing module and is used to store the thickness of a reference wafer, where the reference wafer is a wafer without warpage.

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