Silicon rod assembly

By processing the first silicon square rod and the second silicon square rod that can be connected to each other, the problem of the difference in size of the silicon square rod in the prior art is solved, and the material utilization rate and processing efficiency are improved.

CN222494904UActive Publication Date: 2025-02-18CSI SOLAR POWER GROUP CO LTD +2
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Patent Information

Application Number
CN202420406797.4
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-03-04
Publication Date
2025-02-18
Estimated Expiration
2034-03-04

AI Technical Summary

Technical Problem

In the prior art, the dimensional difference between the silicon square rod produced after cutting the silicon rod and the silicon square rod formed by the original silicon rod is large, resulting in the inability to directly bond, and the material utilization and processing efficiency are low.

Method used

By machining the first silicon square rod and the second silicon square rod on the silicon rod, the surface edges of the silicon rod can be aligned and connected to each other, thereby forming a unitary silicon rod assembly.

Benefits of technology

The utilization rate of silicon rod material is improved, the generation of edge material is reduced, the processing process is simplified, and the processing efficiency of silicon rod assembly is improved.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a silicon rod assembly. The silicon rod assembly comprises a first silicon square rod and a second silicon square rod, the first silicon square rod is provided with a first surface, the first surface is provided with two first long edges and two first short edges, the two first short edges are connected between the two ends of the two first long edges respectively, and the first silicon square rod is a rectangular block. The second silicon square rod is provided with a second surface, the second surface is provided with two second long edges and two second short edges, the two second short edges are connected between the two ends of the two second long edges respectively, and the length of the second long edges and the length of the first long edges are equal to at least one of the length of the second short edges and the length of the first short edges; the second surface is suitable for being connected with the first surface, the second long edge is suitable for being opposite to the first long edge, and the second short edge is suitable for being opposite to the first short edge. Therefore, on one hand, the utilization rate of silicon rod materials can be improved, on the other hand, the silicon rod assembly machining procedures are reduced, and the silicon rod assembly machining efficiency is improved.
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Description

Technical Field

[0001] The utility model relates to the technical field of silicon rod processing, in particular to a silicon rod assembly. Background Art

[0002] In the prior art, when cutting silicon rods, a square silicon rod with a square cross-section is generally cut, and then the four edge skins are processed to form a small-sized silicon rod. However, the size difference between the silicon rod produced by the edge skin and the silicon rod directly formed is large, and the two sizes of silicon rods cannot be directly bonded. In addition, the utilization rate of the silicon rod material is low, and the processing efficiency is low. Utility Model Content

[0003] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, one purpose of the utility model is to provide a silicon rod assembly.

[0004] According to an embodiment of the utility model, the silicon rod assembly includes: a first silicon square rod and a second silicon square rod, wherein the first silicon square rod has a first surface, the first surface has two first long sides and two first short sides, the two first short sides are respectively connected between the two ends of the two first long sides, and the first short side is perpendicular to the first long side; the second silicon square rod has a second surface, the second surface has two second long sides and two second short sides, the two second short sides are respectively connected between the two ends of the two second long sides, the second short side is perpendicular to the second long side, the length of the second long side and the length of the first long side are equal to at least one of the length of the second short side and the length of the first short side, the second surface is suitable for connecting with the first surface, and the second long side is suitable for being opposite to the first long side, and the second short side is suitable for being opposite to the first short side.

[0005] According to the silicon rod assembly of the embodiment of the utility model, the first silicon square rod and the second silicon square rod are formed by processing on the silicon rod, and the first silicon square rod and the second silicon square rod can be connected into a whole. On the one hand, the utilization rate of the silicon rod material can be improved and the generation of edge materials can be reduced. On the other hand, the first silicon square rod and the second silicon square rod can be directly connected, which reduces the processing steps of the silicon rod assembly and improves the efficiency of the silicon rod assembly processing.

[0006] In some embodiments, the length of the second long side is equal to the length of the first long side, and the length of the second short side is equal to the length of the first short side.

[0007] In some embodiments, the thickness of the second silicon square rod is less than or equal to the thickness of the first silicon square rod.

[0008] In some embodiments, the thickness of the first silicon square rod is H, and H satisfies: 182mm≤H≤211mm; the thickness of the second silicon square rod is h, and h satisfies: 23mm≤h≤107mm.

[0009] In some embodiments, the first surface is a surface of the first silicon square rod in a width direction, and the second surface is a surface of the second silicon square rod in a thickness direction.

[0010] In some embodiments, the length of the first long side is L1, and L1 satisfies: 70 mm ≤ L1 ≤ 900 mm; the length of the first short side is D1, and D1 satisfies: 95 mm ≤ D1 ≤ 107 mm.

[0011] In some embodiments, the length of the second long side is L2, and L2 satisfies: 70mm≤L2≤900mm; the length of the second short side is D2, and D2 satisfies: 95mm≤D2≤107mm.

[0012] In some embodiments, there are a plurality of the second silicon square rods, and the plurality of the second silicon square rods are arranged along the thickness direction.

[0013] In some embodiments, the sum of the number of the first silicon square rods and the number of the second silicon square rods is N, and N satisfies: 2≤N≤12.

[0014] In some embodiments, the first surface and the second surface are bonded.

[0015] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0017] Figure 1 Schematic diagram of a silicon rod according to an embodiment of the utility model.

[0018] Figure 2 It is a schematic diagram of a blank used for processing to form a second silicon square rod according to an embodiment of the utility model.

[0019] Figure 3 It is a schematic diagram of a first silicon square rod according to an embodiment of the utility model.

[0020] Figure 4 It is a schematic diagram of a second silicon square rod according to an embodiment of the utility model.

[0021] Figure 5It is a schematic diagram of bonding the first silicon square rod and the second silicon square rod according to an embodiment of the utility model.

[0022] Figure 6 It is a schematic diagram of a finished silicon block according to an embodiment of the utility model.

[0023] Reference numerals:

[0024] 1. Silicon rod; 2. Silicon rod assembly;

[0025] 10. first silicon square rod; 11. first surface; 111. first long side; 112. first short side;

[0026] 20. second silicon square rod; 21. second surface; 211. second long side; 212. second short side;

[0027] 31. Silicon cube;

[0028] 41. First cutting line; 42. Second cutting line. DETAILED DESCRIPTION

[0029] The embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. Figure 1-Figure 6 A silicon rod assembly 2 according to an embodiment of the present invention is described. The silicon rod assembly 2 includes: a first silicon square rod 10 and a second silicon square rod 20 .

[0030] Specifically, if Figure 1-Figure 5 As shown, the first silicon square rod 10 has a first surface 11, the first surface 11 has two first long sides 111 and two first short sides 112, the two first short sides 112 are respectively connected between the two ends of the two first long sides 111, and the first short sides 112 are perpendicular to the first long sides 111, that is, the first silicon square rod 10 is a rectangular block. The second silicon square rod 20 has a second surface 21, the second surface 21 has two second long sides 211 and two second short sides 212, the two second short sides 212 are respectively connected between the two ends of the two second long sides 211, the second short sides 212 are perpendicular to the second long sides 211, the length of the second long side 211 and the length of the first long side 111 are equal to at least one of the length of the second short side 212 and the length of the first short side 112, the second surface 21 is suitable for connecting with the first surface 11, and the second long side 211 is suitable for being opposite to the first long side 111, and the second short side 212 is suitable for being opposite to the first short side 112.

[0031] In the embodiment of the present application, the silicon rod 1 is cut to form a first silicon square rod 10 and a second silicon square rod 20, and the first silicon square rod 10 and the second silicon square rod 20 are bonded to form a silicon rod assembly 2. Among them, a plurality of cutting lines cut the silicon rod 1 along the axial direction of the silicon rod 1 at the end of the silicon rod 1 to form the first silicon square rod 10 and the second silicon square rod 20. Specifically, the plurality of cutting lines include two first cutting lines 41 and two second cutting lines 42, the two first cutting lines 41 are spaced and arranged in parallel along the first direction, and the two second cutting lines 42 are spaced and arranged in parallel along the second direction, and the first direction is perpendicular to the second direction. The two first cutting lines 41 and the two second cutting lines 42 are distributed in a "well" shape, and the first silicon square rod 10 is a symmetrical structure about the central axis of the silicon rod 1. The first silicon square rod 10 is cut to form at least two edge materials that can be used for reprocessing.

[0032] The generated edge material is processed, and the arc-shaped edge of the edge material is cut off to form a second silicon square rod 20, and the size of one of the faces of the second silicon square rod 20 is similar to or the same as the size of at least one face of the first silicon square rod 10. For example, the sides corresponding to the large face of the second silicon square rod 20 are the second long side 211 and the second short side 212. When the second silicon square rod 20 needs to be bonded to the first silicon square rod 10, the large face of the second silicon square rod 20, that is, the second surface 21, is opposite to the first surface 11 of the first silicon square rod 10 and connected. At this time, the second long side 211 is opposite to the first long side 111, the second short side 212 is opposite to the first short side 112, and at least the first short side 112 is flush with the second short side 212.

[0033] According to the silicon rod assembly 2 of the embodiment of the utility model, the first silicon square rod 10 and the second silicon square rod 20 are formed by processing on the silicon rod 1, and the first silicon square rod 10 and the second silicon square rod 20 can be connected into a whole. On the one hand, the utilization rate of the silicon rod 1 material can be improved and the generation of edge materials can be reduced. On the other hand, the first silicon square rod 10 and the second silicon square rod 20 formed by processing can be directly connected, which reduces the processing steps of the silicon rod assembly 2 and improves the processing efficiency of the silicon rod assembly 2.

[0034] Furthermore, the length of the second long side 211 is equal to the length of the first long side 111, and the length of the second short side 212 is equal to the length of the first short side 112. That is, when the first silicon square rod 10 and the second silicon square rod 20 are processed to form, the long side and the short side of at least one surface of the first silicon square rod 10 and the second silicon square rod 20 can be equal, so that the first silicon square rod 10 and the second silicon square rod 20 can ensure the alignment of the corresponding sides when connected, increase the reliability of the connection, facilitate the subsequent processing, and avoid the first silicon square rod 10 and the second silicon square rod 20. Reduced processing efficiency due to different sizes.

[0035] In some embodiments, Figure 3-Figure 4As shown, the thickness of the second silicon square rod 20 is less than or equal to the thickness of the first silicon square rod 10. When processing the first silicon square rod 10 and the second silicon square rod 20, the spacing of the cutting lines is adjusted to ensure that the size of the first silicon square rod 10 cut off is large, and the generated edge skin is processed to form the second silicon square rod 20. Among them, two first edge skins and two second edge skins will be formed when processing the silicon rod 1. Since the cross-section of the formed first silicon square rod 10 is a rectangle, the second edge skin is opposite to the short side of the rectangle, and the first edge skin is opposite to the long side of the rectangle. Since the size of the second edge skin is small, the material return loop can be selected, and the first edge skin is processed to form the second silicon square rod 20, and the thickness of the second silicon square rod 20 is less than or equal to the thickness of the first silicon square rod 10. Therefore, the thickness of the second silicon square rod 20 is less than or equal to the thickness of the first silicon square rod 10, which can facilitate the maximum utilization of the silicon rod 1 to form the first silicon square rod 10, and at the same time, the generated edge material can be processed to form the second silicon square rod 20. Compared with the cutting method of the first silicon square rod 10 with a square cross section, the material utilization rate can be improved.

[0036] In some embodiments, Figure 3 and Figure 4 As shown, the thickness of the first silicon square rod 10 is H, and H satisfies: 182mm≤H≤211mm; the thickness of the second silicon square rod 20 is h, and h satisfies: 23mm≤h≤107mm. That is, when setting the cutting line, the spacing between the two second cutting lines 42 is adjusted so that the first silicon square rod 10 with a thickness of 182mm-211mm can be cut according to the demand. The diameter of the original silicon rod 1 for cutting is 237mm-320mm. When the diameter of the silicon rod 1 is 237mm, the spacing between the two second cutting lines 42 can be adjusted to 182mm, so that the processed first silicon square rod 10 and the second silicon square rod 20 can have the largest volume, thereby improving the utilization rate of the silicon rod 1; when the diameter of the silicon rod 1 is 320mm, the spacing between the two second cutting lines 42 can be adjusted to 211mm, so that the processed first silicon square rod 10 and the second silicon square rod 20 can have the largest volume. When processing the edge material, the spacing between the cutting lines is set so as to improve the utilization rate of the edge material.

[0037] Specifically, when cutting the edge material, the edge material needs to be squared to remove the arc top to form a blank with an upper bottom width of 108mm-112mm and a lower bottom width of 182mm-211mm, and then the arc edges on both sides of the blank are removed to form the second silicon square rod 20.

[0038] In some embodiments, the first surface 11 is a surface in the width direction of the first silicon square rod 10, that is, in the second direction, and the second surface 21 is a surface in the thickness direction of the second silicon square rod 20, that is, in the first direction. For example, the silicon rod 1 has a first direction and a second direction, a side surface of the first silicon square rod 10 along the second direction is the first surface 11, and a side surface of the second silicon square rod 20 along the first direction is the second surface 21. When the first silicon square rod 10 and the second silicon square rod 20 are connected, the first surface 11 and the second surface 21 can be connected relative to each other.

[0039] Optionally, the first silicon square rod 10 has a third surface, which is arranged on one side of the silicon rod 1 along the third direction of the silicon rod 1, and the second silicon square rod 20 can be connected to the third surface. Here, the third surface can be selected according to the size of the silicon square rod or silicon wafer to be processed.

[0040] In some embodiments, Figure 3 As shown, the length of the first long side 111 is L1, and L1 satisfies: 70mm≤L1≤900mm; the length of the first short side 112 is D1, and D1 satisfies: 95mm≤D1≤107mm. Here, the first long side 111 and the first short side 112 included in the first surface 11 are taken as an example. The lengths of the first long side 111 and the first short side 112 are relative to the axial and radial directions of the silicon rod 1. The first long side 111 is the length along the axial direction, and the first short side 112 is the length along the radial direction. For example, when the length of the processed first long side 111 is 900mm, the length of the first short side 112 is 107mm, that is, the spacing between the cutting lines corresponding to the elongation of the cutting is adjusted to make the volume of the processed silicon square rod larger, thereby increasing the material utilization rate of the silicon rod 1.

[0041] In some embodiments, Figure 4 As shown, the length of the second long side 211 is L2, and L2 satisfies: 70mm≤L2≤900mm; the length of the second short side 212 is D2, and D2 satisfies: 95mm≤D2≤107mm. That is, by limiting the lengths of the long side and the short side, the cutting line can adjust the spacing according to the size of the silicon square rod to be processed, so that the processed second silicon square rod 20 is similar to or the same as at least one surface size of the first silicon square rod 10. For example, the second surface 21 includes a second long side 211 and a second short side 212, the length of the second short side 212 is equal to the length of the first short side 112, the length of the second long side 211 is equal to the length of the first long side 111, D1=D2=95mm, L1=L2=70mm. In this way, the reliability of the connection between the first silicon square rod 10 and the second silicon square rod 20 can be increased.

[0042] In addition, in order to make the surface of the first silicon square rod 10 and the second silicon square rod 20 smooth for connection, the first surface 11 and the second surface 21 need to be polished and leveled by a trimming machine to control the plane range of the first surface 11 and the second surface 21 to be less than 0.3 mm. Then, the first silicon square rod 10 and the second silicon square rod 20 are cleaned and air-dried by a cleaning machine according to the needs and then connected to form a silicon rod assembly 2. The spacing between adjacent first silicon square rods 10 and second silicon square rods 20 and the spacing between adjacent second silicon square rods 20 are controlled to be less than 0.2 mm. Then, when the formed silicon rod assembly 2 is cut, polished and sliced, it is not necessary to frequently adjust the cutting wire mesh, thereby improving the production efficiency and qualified rate of processing and slicing.

[0043] In some embodiments, there are multiple second silicon square rods 20, and the multiple second silicon square rods 20 are arranged along the thickness direction. That is, when cutting the silicon rod 1, the size of the silicon square rod formed and the utilization rate of the material are considered. Generally, after processing the first silicon square rod 10, two edge materials symmetrically distributed about the first silicon square rod 10 will be generated, and each edge material can produce at least one second silicon square rod 20. The multiple second silicon square rods 20 are arranged and connected along the thickness direction, which is convenient for improving processing efficiency.

[0044] In some embodiments, in combination Figure 5-Figure 6 The sum of the number of the first silicon square rods 10 and the second silicon square rods 20 is N, and N satisfies: 2≤N≤12. In this embodiment, the number of silicon square rods cut at one time can reach 2-12, and the specific number is adjusted according to the processing requirements. After the small silicon blocks 31 formed by cutting the multiple first silicon square rods 10 and the second silicon square rods 20 are automatically grasped by a robot or manually placed on a grinder for polishing to form finished silicon blocks 31, the multiple finished silicon blocks 31 are arranged on a fixed plate and placed on a cutting device for cutting to form silicon wafers.

[0045] Optionally, the first surface 11 and the second surface 21 are bonded, that is, the first silicon square rod 10 and the second silicon square rod 20 are bonded by a special adhesive, which is then cured for more than one hour, thereby further improving the reliability of the connection between the first silicon square rod 10 and the second silicon square rod 20.

[0046] In addition, the size of the final silicon square block 31 of the present application is well matched with the existing packaging material for placing the first silicon square rod 10 and the second silicon square rod 20, so there is no need to develop new packaging materials, which can save the design and development cost of the mold and is more convenient. At the same time, the cutting line cuts the silicon rod 1 axially to avoid the generation of abnormal concentric circles of the battery cell manufactured by the silicon wafer.

[0047] Among them, the concentric circles in the silicon wafer of a single crystal cell are the circular black circles that spread outward from the middle position during the EL test of the cell, and the conversion efficiency of the cell in the concentric circle area is extremely low. Through experimental testing, it is mainly caused by a large number of dislocations in the original silicon wafer. Dislocations are mainly related to the direction of the single crystal silicon rod 1 during the processing process, and the traditional silicon square rod or silicon wafer is cut horizontally, and its cutting direction is perpendicular to the drawing direction of the single crystal silicon rod 1. The cross section of the silicon square rod or silicon wafer coincides with the cross section of the single crystal silicon rod 1, which leads to the silicon rod 1 Once the concentric circle abnormality occurs, the silicon square rod, silicon wafer, cell and other processes will not be able to avoid the appearance of concentric circles. The cutting method of the present application makes the cross-sectional area of ​​the silicon square rod or silicon wafer parallel to the drawing direction of the single crystal silicon rod 1, and the cross section of the silicon square rod or silicon wafer is perpendicular to the cross section of the single crystal silicon rod 1, so that even if the single crystal silicon rod 1 has a concentric circle abnormality, it can be well avoided at the silicon square rod, silicon wafer, and battery end, which can save a lot of concentric circle abnormalities for the battery end. Loss of cells caused by abnormality.

[0048] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0049] In the description of the present utility model, "first feature" and "second feature" may include one or more of the features. In the description of the present utility model, "plurality" means two or more. In the description of the present utility model, the first feature "above" or "below" the second feature may include the first and second features being in direct contact, or the first and second features being in contact not directly but through another feature between them. In the description of the present utility model, the first feature "above", "above" and "above" the second feature include the first feature being directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.

[0050] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example.

[0051] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A silicon rod assembly, characterized in that: include: A first silicon square rod, wherein the first silicon square rod has a first surface, wherein the first surface has two first long sides and two first short sides, wherein the two first short sides are respectively connected between two ends of the two first long sides, and the first short sides are perpendicular to the first long sides; A second silicon square rod, wherein the second silicon square rod has a second surface, the second surface has two second long sides and two second short sides, the two second short sides are respectively connected between the two ends of the two second long sides, the second short side is perpendicular to the second long side, the length of the second long side and the length of the first long side are equal to at least one of the length of the second short side and the length of the first short side, the second surface is suitable for being connected to the first surface, the second long side is suitable for being opposite to the first long side, and the second short side is suitable for being opposite to the first short side.

2. The silicon rod assembly according to claim 1, characterized in that: The length of the second long side is equal to that of the first long side, and the length of the second short side is equal to that of the first short side.

3. The silicon rod assembly according to claim 1, characterized in that: The thickness of the second silicon square rod is less than or equal to the thickness of the first silicon square rod.

4. The silicon rod assembly according to claim 3, characterized in that: The thickness of the first silicon square rod is H, and H satisfies: 182 mm ≤ H ≤ 211 mm; The thickness of the second silicon square rod is h, and h satisfies: 23 mm ≤ h ≤ 107 mm.

5. The silicon rod assembly according to claim 1, characterized in that: The first surface is a surface of the first silicon square rod in a width direction, and the second surface is a surface of the second silicon square rod in a thickness direction.

6. The silicon rod assembly according to claim 1, characterized in that: The length of the first long side is L1, and L1 satisfies: 70 mm ≤ L1 ≤ 900 mm; The length of the first short side is D1, and D1 satisfies: 95 mm ≤ D1 ≤ 107 mm.

7. The silicon rod assembly according to claim 1, characterized in that: The length of the second long side is L2, and L2 satisfies: 70 mm ≤ L2 ≤ 900 mm; The length of the second short side is D2, and D2 satisfies: 95 mm ≤ D2 ≤ 107 mm.

8. The silicon rod assembly according to claim 1, characterized in that: There are a plurality of the second silicon square rods, and the plurality of the second silicon square rods are arranged along the thickness direction.

9. The silicon rod assembly according to claim 1, characterized in that: The sum of the number of the first silicon square rods and the number of the second silicon square rods is N, and N satisfies: 2≤N≤12.

10. The silicon rod assembly according to any one of claims 1 to 9, characterized in that: The first surface and the second surface are bonded.