Ceramic substrate for semiconductor

Abstract

The utility model relates to the technical field of semiconductors, and discloses a ceramic substrate for semiconductors, which comprises a plate body, the left side of the plate body is fixedly connected with a convex block, the right side of the plate body is provided with a groove, the top end in the plate body is fixedly connected with a heat transfer assembly, and the bottom end in the plate body is fixedly connected with a power transmission assembly. Two clamping grooves are formed in the right side of the plate body, two clamping columns are connected to the inner wall of the groove in a sliding mode, a rotary knob is connected to the inner wall of each clamping column in a sliding mode, a clamping block is fixedly connected to the bottom end of each rotary knob, the outer portion of each clamping block and the inner wall of the corresponding clamping groove are in a clamping relation, and a bottom block is fixedly connected to the bottom end of each clamping column. According to the utility model, by pulling up the knob and rotating the clamping block by 90 degrees, the clamping block resets due to the torque force of the spring after being inserted, so that the clamping block is clamped with the clamping groove, the proper base plate can be quickly replaced according to different application requirements, and greater flexibility is provided for the product design.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a ceramic substrate for semiconductors. Background Art

[0002] Semiconductor technology is the cornerstone of modern electronic technology, covering the development and manufacturing process from material preparation, device design to integrated circuits and their application systems. As the core power of the information age, it not only promotes the process of global informatization, but also is a key technology for realizing digital transformation. From single transistors to complex integrated circuits, and then to today's highly integrated microprocessors, the evolution of semiconductor technology reflects mankind's continuous exploration and innovation of electronic technology.

[0003] After searching, Chinese patent announcement number: CN216120352U discloses a double stress relief semiconductor module, including an upper ceramic substrate and a lower ceramic substrate, a plurality of semiconductor elements between the upper ceramic substrate and the lower ceramic substrate, a first guide plate is provided between the upper ceramic substrate and the semiconductor element, a second guide plate is provided between the lower ceramic substrate and the semiconductor element, the plurality of semiconductor elements are connected in series through the first guide plate and the second guide plate, at least one of the upper ceramic substrate and the lower ceramic substrate is provided with a plurality of transverse cutting grooves and longitudinal cutting grooves, the first guide plate and the second guide plate are provided with a plurality of grooves, and the direction of the grooves is consistent with the current flow direction. The utility model effectively reduces thermal stress under high temperature or low temperature conditions, and can also reduce thermal stress under rapid temperature cycles, and can also reduce thermal stress under intensive power-on and power-off operations.

[0004] The above patent specification mentions that "the utility model solves the problem that existing semiconductor modules cannot effectively reduce thermal stress, and proposes a semiconductor module with dual stress relief, which can effectively reduce thermal stress under high temperature or low temperature conditions, and can also reduce thermal stress under rapid temperature cycles, and can also reduce thermal stress under intensive power-on and power-off operations." Although the above patent can effectively reduce thermal stress under high temperature or low temperature conditions, and can also reduce thermal stress under rapid temperature cycles, and can also reduce thermal stress under intensive power-on and power-off operations, it is impossible to quickly replace the appropriate substrate according to different application requirements during specific use, and cannot provide flexibility for product design. Therefore, a ceramic substrate for semiconductors is proposed to solve the above problems. Utility Model Content

[0005] In order to make up for the above shortcomings, the utility model provides a ceramic substrate for semiconductors, aiming to improve the problem in the prior art that a suitable substrate cannot be quickly replaced according to different application requirements and cannot provide flexibility for product design.

[0006] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0007] A semiconductor ceramic substrate comprises a plate body, a protrusion is fixedly connected to the left side of the plate body, a groove is provided on the right side of the plate body, a heat transfer component is fixedly connected to the top end of the inner part of the plate body, a power transfer component is fixedly connected to the bottom end of the inner part of the plate body, two card slots are provided on the right side of the plate body, two card columns are slidably connected to the inner wall of the groove, a knob is slidably connected to the inner wall of the card column, a card block is fixedly connected to the bottom end of the knob, the outer part of the card block is in a carding relationship with the inner wall of the card slot, a bottom block is fixedly connected to the bottom end of the card column, and a spring is provided inside the card column;

[0008] As a further description of the above technical solution:

[0009] The heat transfer component includes a heat conductive layer, the outer portion of the heat conductive layer is fixedly connected to the inner top end of the plate body;

[0010] As a further description of the above technical solution:

[0011] The power transmission component includes a conductive layer, the outer portion of the conductive layer is fixedly connected to the inner bottom end of the plate body;

[0012] As a further description of the above technical solution:

[0013] The bottom end of the heat-conducting layer is fixedly connected to the top end of the conductive layer, and the outer portion of the protrusion is slidably connected to the inner wall of the groove;

[0014] As a further description of the above technical solution:

[0015] The outside of the clamping block is slidably connected to the inner wall of the clamping column, and the bottom end of the bottom block is in contact with the bottom end of the inner wall of the groove;

[0016] As a further description of the above technical solution:

[0017] One end of the spring is fixedly connected to one side of the bottom block, and the other end of the spring is fixedly connected to one side of the clamping block;

[0018] As a further description of the above technical solution:

[0019] The outside of the clamping block is slidably connected to the inner wall of the groove, and the outside of the bottom block is slidably connected to the inner wall of the protrusion;

[0020] As a further description of the above technical solution:

[0021] The material of the thermal conductive layer is zinc oxide (ZnO), and the material of the conductive layer is lead tungstate (PWO).

[0022] The utility model has the following beneficial effects:

[0023] In the utility model, by pulling up the knob and rotating the card block 90 degrees, the card column can be inserted into the slot where the plate body and the protrusion are plugged in. At the same time, after insertion, the card block will be reset due to the torque force of the spring, thereby completing the engagement with the card slot. This design can quickly replace the appropriate substrate according to different application requirements, providing greater flexibility for product design. At the same time, the material of the thermal conductive layer here is zinc oxide (ZnO) and the material of the conductive layer is lead tungstate (PWO), which effectively improves the thermal conductivity and electrical conductivity of the semiconductor ceramic substrate, thereby further improving the reliability of this ceramic substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A three-dimensional schematic diagram of a ceramic substrate for semiconductors proposed by the utility model;

[0025] Figure 2 This is a schematic structural diagram of a bump on a semiconductor ceramic substrate proposed by the utility model;

[0026] Figure 3 This is a structural schematic diagram of a slot of a semiconductor ceramic substrate proposed by the utility model;

[0027] Figure 4 The utility model is a schematic structural diagram of a bottom block of a semiconductor ceramic substrate.

[0028] Legend:

[0029] 1. Plate body; 2. Bump; 3. Groove; 4. Heat-conducting layer; 5. Conductive layer; 6. Slot; 7. Post; 8. Knob; 9. Block; 10. Bottom block; 11. Spring. DETAILED DESCRIPTION

[0030] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0031] Reference Figure 1-Figure 2The utility model provides an embodiment: a semiconductor ceramic substrate, including a plate body 1, a protrusion 2 is fixedly connected to the left side of the plate body 1, and a groove 3 is opened on the right side of the plate body 1. The protrusion 2 here fits with the groove 3 on the right side of the plate body 1 and can be perfectly inserted. The outer part of the protrusion 2 is slidably connected to the inner wall of the groove 3, and the inner top of the plate body 1 is fixedly connected with a heat transfer component. The heat transfer component includes a heat conductive layer 4. The heat conductive layer 4 here is used to improve the basic thermal conductivity of semiconductor ceramics. The material of the heat conductive layer 4 is zinc oxide (ZnO). The high thermal conductivity of zinc oxide (ZnO) ensures that the heat in the operation of the power device is quickly dispersed, thereby optimizing the performance stability of the device and extending the service life.

[0032] Reference Figure 2-Figure 4 The outside of the heat-conducting layer 4 is fixedly connected to the top of the inner part of the board body 1, and the inner bottom of the board body 1 is fixedly connected to a power transmission component, which includes a conductive layer 5. The conductive layer 5 is made of lead tungstate (PWO). The application of lead tungstate (PWO) inside the semiconductor ceramic substrate optimizes the electron mobility due to its excellent conductivity. This characteristic helps to improve the response speed and sensitivity of the device, while reducing power consumption, providing reliable support for high-performance electronic devices. The bottom of the heat-conducting layer 4 is fixedly connected to the top of the conductive layer 5, and the outside of the conductive layer 5 is fixedly connected to the inner bottom of the board body 1. Two card grooves 6 are opened on the right side of the board body 1, and two card columns 7 are slidably connected to the inner wall of the groove 3. The groove 3 here provides a stable sliding space for the card column 7;

[0033] The inner wall of the card column 7 is slidably connected with a knob 8, and the bottom end of the knob 8 is fixedly connected with a card block 9. Here, turning the knob 8 can drive the card block 9 to turn 90 degrees in a single direction. The outside of the card block 9 is slidably connected to the inner wall of the groove 3. The outside of the card block 9 is slidably connected to the inner wall of the card column 7. The outside of the card block 9 is in a snap-fitting relationship with the inner wall of the card slot 6. The bottom end of the card column 7 is fixedly connected with a bottom block 10. Here, the card column 7 provides a stable support for the bottom block 10. The outside of the bottom block 10 is slidably connected to the inner wall of the protrusion 2, and the bottom end of the bottom block 10 contacts the bottom end of the inner wall of the groove 3.

[0034] A spring 11 is provided inside the card column 7. After turning, the card column 7 is inserted into the groove 3 and the hand is released. At this time, the spring 11 can drive the card block 9 to reset due to the torque force when it is rotated, thereby completing the engagement with the card groove 6 and completing the fixation. One end of the spring 11 is fixedly connected to one side of the bottom block 10, and the other end of the spring 11 is fixedly connected to one side of the card block 9. The bottom block 10 and the card block 9 here provide stable support for the spring 11.

[0035] Working principle: first plug the protrusions 2 on the right and left sides of the two plate bodies 1, then pull the knob 8 to drive the block 9 to move to the top of the inner wall of the card column 7, and then turn the knob 8 to 90 degrees to make the position of the block 9 consistent with the position of the bottom block 10 in the vertical direction. At this time, the card column 7 can be inserted into the slot at the connection between the plate body 1 and the protrusion 2. At this time, because the spring 11 is stretched when the knob 8 is pulled, the block 9 will be driven down after the hand is released, and after the block 9 squeezes the protrusion 2, the torque force when the knob 8 is turned causes the spring 11 to rotate 90 degrees in the opposite direction, thereby completing the engagement with the card slot 6, thereby completing the splicing of the two semiconductor ceramic substrates.

[0036] The thermal conductive layer 4 here is made of zinc oxide (ZnO). The application of zinc oxide (ZnO) inside the semiconductor ceramic substrate effectively improves heat management due to its excellent thermal conductivity. High thermal conductivity ensures that the heat in the operation of the power device is quickly dispersed, thereby optimizing the performance stability of the device and extending the service life. The conductive layer 5 here is made of lead tungstate (PWO). The application of lead tungstate (PWO) inside the semiconductor ceramic substrate optimizes electron mobility due to its excellent electrical conductivity. This feature helps to improve the response speed and sensitivity of the device while reducing power consumption, providing reliable support for high-performance electronic devices.

[0037] Finally, it should be noted that the above is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A ceramic substrate for semiconductor, comprising a plate body (1), characterized in that: A protrusion (2) is fixedly connected to the left side of the plate body (1), a groove (3) is provided on the right side of the plate body (1), a heat transfer component is fixedly connected to the top end of the plate body (1), a power transfer component is fixedly connected to the bottom end of the plate body (1), two slots (6) are provided on the right side of the plate body (1), two clamping columns (7) are slidably connected to the inner wall of the slot (3), a knob (8) is slidably connected to the inner wall of the clamping column (7), a clamping block (9) is fixedly connected to the bottom end of the knob (8), the outer portion of the clamping block (9) is in a clamping relationship with the inner wall of the slot (6), a bottom block (10) is fixedly connected to the bottom end of the clamping column (7), and a spring (11) is provided inside the clamping column (7).

2. A semiconductor ceramic substrate according to claim 1, characterized in that: The heat transfer component comprises a heat conducting layer (4), the exterior of the heat conducting layer (4) being fixedly connected to the internal top end of the plate body (1).

3. A semiconductor ceramic substrate according to claim 2, characterized in that: The power transmission component comprises a conductive layer (5), the outside of the conductive layer (5) being fixedly connected to the inner bottom end of the plate body (1).

4. A semiconductor ceramic substrate according to claim 3, characterized in that: The bottom end of the heat-conducting layer (4) is fixedly connected to the top end of the conductive layer (5), and the outside of the protrusion (2) is slidably connected to the inner wall of the groove (3).

5. The semiconductor ceramic substrate according to claim 1, characterized in that: The outside of the clamping block (9) is slidably connected to the inner wall of the clamping column (7), and the bottom end of the bottom block (10) is in contact with the bottom end of the inner wall of the groove (3).

6. The semiconductor ceramic substrate according to claim 1, characterized in that: One end of the spring (11) is fixedly connected to one side of the bottom block (10), and the other end of the spring (11) is fixedly connected to one side of the clamping block (9).

7. The semiconductor ceramic substrate according to claim 1, characterized in that: The outside of the clamping block (9) is slidably connected to the inner wall of the groove (3), and the outside of the bottom block (10) is slidably connected to the inner wall of the protrusion (2).

8. The semiconductor ceramic substrate according to claim 3, characterized in that: The material of the heat-conducting layer (4) is zinc oxide (ZnO), and the material of the conductive layer (5) is lead tungstate (PWO).

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