Monocrystalline silicon growth furnace capable of efficiently observing space in furnace
By designing an adjustable observation window and video acquisition unit mounting bracket on the furnace cover of a single crystal silicon growth furnace, the problem that video acquisition unit cannot fully observe important areas in the furnace in the prior art is solved, and the space in the furnace is realized Efficient observation and effective monitoring of single crystal silicon growth process.
Patent Information
- Application Number
- CN202421163626.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-27
- Publication Date
- 2025-02-21
- Estimated Expiration
- 2034-05-27
AI Technical Summary
The existing single crystal silicon growth furnace video acquisition unit is installed at a fixed location, so it is impossible to fully observe the important growth areas in the furnace, affecting the quality and yield of single crystal silicon.
A single crystal silicon growth furnace is designed, and the furnace cover is equipped with an observation window, which has an adjustable annular insertion sleeve. Through the cooperation of the mounting frame and the limiting unit, the installation angle and position of the video acquisition unit can be adjusted. , thereby expanding the angle of video acquisition.
It realizes efficient observation of the space in the furnace, can better monitor the growth process of single crystal silicon, and improves the quality and yield of single crystal silicon.
Smart Images

Figure CN222512994U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of single crystal silicon growth furnaces, and more specifically to a single crystal silicon growth furnace capable of efficiently observing the space inside the furnace. Background Art
[0002] A single crystal silicon growth furnace is a manufacturing equipment used to produce single crystal silicon. The single crystal silicon growth furnace uses the Czochralski method to grow single crystals, which is easy to achieve automatic control and has high production efficiency. The single crystal silicon growth furnace has broad application prospects in semiconductors, photovoltaics and other fields.
[0003] Existing single crystal silicon growth furnaces are usually equipped with video acquisition units for real-time monitoring of the growth of single crystal silicon in the furnace. However, since the installation position of the video acquisition unit is fixed, its position and angle are not easy to adjust. The video acquisition unit can only cover a limited area of the furnace space and cannot fully observe more important growth areas in the furnace. This limitation of viewing angle makes it impossible for operators to accurately judge the overall situation of single crystal silicon growth, especially in some key growth stages, and important growth information may be missed, which in turn affects the quality and yield of single crystal silicon. Utility Model Content
[0004] The utility model aims to overcome the defects of the prior art and provide a single crystal silicon growth furnace capable of efficiently observing the space inside the furnace.
[0005] In order to achieve the above-mentioned purpose, the utility model provides the following technical solutions: a single crystal silicon growth furnace, comprising a base, a lower furnace body, an upper furnace body, a furnace cover, a connecting furnace body, a transfer furnace body, a transfer furnace body driving unit for driving the transfer furnace body, a heating unit, a crucible, a crucible rotation driving unit for driving the crucible to rotate, an argon gas supply unit and a silicon rod pulling unit for pulling silicon rods, the furnace cover is provided with an observation window, the observation window is provided with an observation window cover, the observation window cover has a plurality of annular sockets distributed at equal intervals, the observation window cover is provided with a mounting frame, and the mounting frame includes Two insertion rods and an arc-shaped rod connecting the two insertion rods, the insertion rod can be inserted into the insertion sleeve, the insertion sleeve has a tightening bolt that can tighten the insertion rod, a first slider is installed at the insertion rod, the first slider has a first locking bolt that can fix the relative position of the slider and the insertion rod, two guide rods are connected between the two first sliders, a second slider is installed between the two guide rods, the second slider has two guide holes that cooperate with the guide rods, the second slider has a second locking bolt that can fix the relative position of the guide rod and the second slider, the second slider is connected to a mounting portion, and a video acquisition unit is installed on the mounting portion.
[0006] Further, the mounting portion includes a first mounting plate, a second mounting plate connected to the first mounting plate, and a third mounting plate connected to the second mounting plate, the video acquisition unit is installed at the third mounting plate, the first mounting plate is connected to a limiting unit, the limiting unit includes a fixed plate, an arc plate connected to the fixed plate, and a limiting plug plate connected to the arc plate, the second mounting plate includes a rectangular plate and a semicircular plate connected to the rectangular plate, the rectangular plate has a stud, the stud passes through the first mounting plate and is fixed by a nut, and the semicircular plate has a plurality of limiting slots that cooperate with the limiting plug plate.
[0007] By cooperating the limiting unit with different limiting slots, the installation angle of the video acquisition unit can be adjusted, thereby further expanding the angle of video acquisition, and the fixing effect is good through the cooperation of the stud and the nut and the limiting of the limiting unit.
[0008] Furthermore, the plurality of limiting slots are distributed in an arc shape at equal intervals.
[0009] Furthermore, the first mounting plate has a mounting through hole that cooperates with the stud.
[0010] This facilitates fixed connection between the second mounting plate and the first mounting plate.
[0011] Furthermore, there are eight sockets, and two sockets are arranged between two plug rods.
[0012] This provides more options for adjusting the position of the mounting bracket.
[0013] Furthermore, the connecting furnace body is fixedly connected to the furnace cover, the transfer furnace body is located above the furnace cover, and the upper furnace body is provided with a first lifting drive unit for driving the upper furnace body to rise and fall.
[0014] Therefore, after the growth of single crystal silicon is completed, it can be easily transferred from the furnace to the outside for processing.
[0015] Furthermore, the furnace cover is provided with a second lifting drive unit for driving the furnace cover to lift up and down.
[0016] Thereby, it is convenient to drive the furnace cover to rise and fall for operation.
[0017] Compared with the prior art, the utility model has the following beneficial effects:
[0018] 1. The single crystal silicon growth furnace of the present application has a large video acquisition angle by selecting the installed sleeve and the positions of the first and second sliders, so that the space inside the furnace can be observed more efficiently, thereby better monitoring the growth process of single crystal silicon.
[0019] 2. The single crystal silicon growth furnace of the present application can adjust the installation angle of the video acquisition unit by cooperating with the limiting unit and different limiting slots, thereby further expanding the angle of video acquisition.
[0020] 3. The single crystal silicon growth furnace of the present application limits the video acquisition unit through the cooperation of the stud and the nut and the cooperation of the limit unit and the limit slot, so that the fixing effect is good. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 This is a schematic diagram of the growth furnace from the first perspective;
[0022] Figure 2 This is an enlarged view of area A;
[0023] Figure 3 This is a schematic diagram of the growth furnace from the second perspective;
[0024] Figure 4 This is an enlarged view of area B;
[0025] Figure 5 This is a third-view schematic diagram of the growth furnace;
[0026] Figure 6 This is an enlarged view of area C.
[0027] Explanation of the reference numerals: 1 base; 2 lower furnace body; 3 upper furnace body; 4 furnace cover; 4.1 observation window cover; 4.2 socket; 4.3 tightening bolt; 5 connecting furnace body; 6 transferring furnace body; 7 driving unit for transferring furnace body; 8.1 plug rod; 8.2 arc rod; 8.3 first slider; 8.4 first locking bolt; 8.5 guide rod; 8.6 second slider; 8.7 second locking bolt; 9 video acquisition unit; 10.1 first mounting plate; 10.2 rectangular plate; 10.3 semicircular plate; 10.4 third mounting plate; 10.5 stud; 11.1 fixing plate; 11.2 arc plate; 11.3 limiting plug plate. DETAILED DESCRIPTION
[0028] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0029] The utility model provides Figure 1-6A single crystal silicon growth furnace capable of efficiently observing the space inside the furnace is shown, comprising a base 1, a lower furnace body 2, an upper furnace body 3, a furnace cover 4, a furnace body connection 5, a transfer furnace body 6, a transfer furnace body drive unit 7 for driving the transfer furnace body 6, a heating unit, a crucible, a crucible rotation drive unit for driving the crucible to rotate, an argon gas supply unit, and a silicon rod pulling unit for pulling silicon rods, wherein the furnace cover 4 has an observation window, the observation window has an observation window cover 4.1, the observation window cover 4.1 has a plurality of annular plug sleeves 4.2 distributed at equal intervals, the observation window cover 4.1 is installed with a mounting frame, the mounting frame includes two plug rods 8.1 and an arc rod 8.2 connecting the two plug rods 8.1, the plug rods 8.1 can be inserted into the socket 4.2, the socket 4.2 has a tightening bolt 4.3 that can tighten the plug rod 8.1, the plug rod 8.1 is installed with a first slider 8.3, the first slider 8.3 has a first locking bolt 8.4 that can fix the relative position of the slider and the plug rod 8.1, two guide rods 8.5 are connected between the two first sliders 8.3, a second slider 8.6 is installed between the two guide rods 8.5, the second slider 8.6 has two guide holes that cooperate with the guide rod 8.5, the second slider 8.6 has a second locking bolt 8.7 that can fix the relative position of the guide rod 8.5 and the second slider 8.6, the second slider 8.6 is connected with a mounting portion, and the mounting portion is installed with a video acquisition unit 9.
[0030] The mounting portion includes a first mounting plate 10.1, a second mounting plate connected to the first mounting plate 10.1, and a third mounting plate 10.4 connected to the second mounting plate. The video acquisition unit 9 is installed at the third mounting plate 10.4. The first mounting plate 10.1 is connected to a limiting unit. The limiting unit includes a fixed plate 11.1, an arc plate 11.2 connected to the fixed plate 11.1, and a limiting plug plate 11.3 connected to the arc plate 11.2. The second mounting plate includes a rectangular plate 10.2 and a semicircular plate 10.3 connected to the rectangular plate 10.2. The rectangular plate 10.2 has a stud 10.5. The stud 10.5 passes through the first mounting plate 10.1 and is fixed by nuts, and the semicircular plate 10.3 has a plurality of limit slots that cooperate with the limit plug plate 11.3; the plurality of limit slots are distributed in an arc shape with equal intervals; the first mounting plate 10.1 has a mounting through hole that cooperates with the stud 10.5; the sockets 4.2 have 8 pieces, and there are two sockets 4.2 between the two plug rods 8.1; the connecting furnace body 5 is fixedly connected to the furnace cover 4, the transfer furnace body 6 is located above the furnace cover 4, and the upper furnace body 3 has a first lifting drive unit for driving the upper furnace body 3 to rise and fall; the furnace cover 4 has a second lifting drive unit for driving the furnace cover 4 to rise and fall.
[0031] Working principle: The single crystal silicon growth furnace of the present application can select a large angle for video acquisition by selecting the installed plug sleeve and the positions of the first and second sliders, so that the space inside the furnace can be observed more efficiently. The installation angle of the video acquisition unit can be adjusted by cooperating with different limit slots, thereby further expanding the angle of video acquisition. The video acquisition unit is limited by cooperating with the stud and nut and the limit unit and the limit slot, so that the fixing effect is good.
[0032] When making specific adjustments, first, select the appropriate socket according to the required viewing angle, insert the two plug rods into the two selected sockets respectively, and fix the plug rods in the sockets by tightening bolts to ensure the stability of the plug rods, thereby determining the initial angle of the video acquisition unit. Then, adjust the height of the video acquisition unit by adjusting the position of the first slider on the plug rod. After the adjustment is completed, use the first locking bolt to fix the position of the first slider. Then, adjust the position of the second slider on the guide rod to further adjust the angle of the video acquisition unit. After the adjustment is completed, use the second locking bolt to fix the position of the second slider. Then, according to the needs, insert the limit plug plate into the appropriate limit slot, and fix the first mounting plate and the second mounting plate by studs and nuts, thereby finally fixing the angle of the video acquisition unit. At the same time, the close fit between the limit unit and the limit slot further enhances the fixing effect of the video acquisition unit.
[0033] Although the present invention has been illustrated and described with respect to preferred embodiments, those skilled in the art will appreciate that various changes and modifications may be made to the present invention without departing from the scope of the present invention as defined by the claims.
Claims
1. A single crystal silicon growth furnace capable of efficiently observing the space inside the furnace, characterized in that: The invention comprises a base, a lower furnace body, an upper furnace body, a furnace cover, a connecting furnace body, a transfer furnace body, a transfer furnace body driving unit for driving the transfer furnace body, a heating unit, a crucible, a crucible rotation driving unit for driving the crucible to rotate, an argon gas supply unit and a silicon rod pulling unit for pulling silicon rods. The furnace cover is provided with an observation window, the observation window is provided with an observation window cover, the observation window cover has a plurality of insert sleeves distributed in an annular shape and at equal intervals, the observation window cover is provided with a mounting frame, the mounting frame comprises two insert rods and an arc rod connecting the two insert rods, the insert rod can be inserted into the insert sleeve, the insert sleeve has a tightening bolt that can tighten the insert rod, a first slider is provided at the insert rod, the first slider has a first locking bolt that can fix the relative position of the slider and the insert rod, two guide rods are connected between the two first sliders, a second slider is provided between the two guide rods, the second slider has two guide holes matched with the guide rods, the second slider has a second locking bolt that can fix the relative position of the guide rod and the second slider, the second slider is connected with a mounting portion, and a video acquisition unit is provided on the mounting portion.
2. The single crystal silicon growth furnace capable of efficiently observing the space inside the furnace according to claim 1, characterized in that: The mounting portion includes a first mounting plate, a second mounting plate connected to the first mounting plate, and a third mounting plate connected to the second mounting plate, the video acquisition unit is installed on the third mounting plate, the first mounting plate is connected to a limiting unit, the limiting unit includes a fixed plate, an arc-shaped plate connected to the fixed plate, and a limiting plug-in plate connected to the arc-shaped plate, the second mounting plate includes a rectangular plate and a semicircular plate connected to the rectangular plate, the rectangular plate has a stud, the stud passes through the first mounting plate and is fixed by a nut, and the semicircular plate has a plurality of limiting slots that cooperate with the limiting plug-in plate.
3. The single crystal silicon growth furnace capable of efficiently observing the space inside the furnace according to claim 2, characterized in that: A plurality of limiting slots are distributed in an arc shape at equal intervals.
4. The single crystal silicon growth furnace capable of efficiently observing the space inside the furnace according to claim 2, characterized in that: The first mounting plate has a mounting through hole matched with the stud.
5. The single crystal silicon growth furnace capable of efficiently observing the space inside the furnace according to claim 1, characterized in that: There are eight insert sleeves, and two insert sleeves are arranged between two insert rods.
6. The single crystal silicon growth furnace capable of efficiently observing the space inside the furnace according to claim 1, characterized in that: The connecting furnace body is fixedly connected to the furnace cover, the transferring furnace body is located above the furnace cover, and the upper furnace body is provided with a first lifting driving unit for driving the upper furnace body to lift.
7. The single crystal silicon growth furnace capable of efficiently observing the space inside the furnace according to claim 1, characterized in that: The furnace cover is provided with a second lifting drive unit for driving the furnace cover to lift up and down.