Silicon carbide wafer etching furnace monitoring device
By designing wind speed detection parts and alarm devices in the silicon carbide wafer etching furnace, the problem of difficult detection of the exhaust components is solved, real-time monitoring and alarm of the exhaust fan status is achieved, and etching effect and equipment safety are improved.
Patent Information
- Application Number
- CN202421221093.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-30
- Publication Date
- 2025-02-21
- Estimated Expiration
- 2034-05-30
AI Technical Summary
In the existing silicon carbide wafer etching furnace, the working conditions of the exhaust components are difficult to detect, resulting in the inability to timely judge the working status of the exhaust fans, affecting the etching effect and equipment safety.
A silicon carbide wafer etching furnace monitoring device is designed, including an etching furnace body, an exhaust assembly and a wind speed detection part. The exhaust assembly includes an exhaust duct and a fan. The wind speed detection member is arranged in the connecting section of the exhaust duct to detect the wind speed and to issue an alarm signal through an alarm device to remind the operator.
Through real-time monitoring of the wind speed detector, the working condition of the exhaust component can be detected in a timely manner, avoiding the problem of temperature increase and poor etching effect caused by insufficient exhaust, and improving the safety and efficiency of the equipment.
Smart Images
Figure CN222514889U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, in particular to a monitoring device for a silicon carbide wafer etching furnace. Background Art
[0002] Silicon carbide wafer etching furnace is a kind of equipment specially used for fine processing of silicon carbide (SiC) wafers, mainly used to form specific patterns on the surface of wafers or remove specific materials.
[0003] The inventors have found through research that it is difficult to detect the working condition of the exhaust assembly in some existing silicon carbide wafer etching furnaces when they are in operation. Utility Model Content
[0004] The utility model aims to provide a monitoring device for a silicon carbide wafer etching furnace, which can detect the working condition of an exhaust component.
[0005] The embodiment of the utility model is achieved as follows:
[0006] In a first aspect, the utility model provides a monitoring device for a silicon carbide wafer etching furnace, comprising:
[0007] The etching furnace body is provided with a heating module, and the heating module is used to heat the etching furnace body;
[0008] An exhaust assembly, the exhaust assembly includes an exhaust pipe and a fan connected to each other, the exhaust pipe includes a connecting section and an exhaust section connected in sequence, the connecting section extends along a preset straight line, the connecting section is connected to the etching furnace body, and the exhaust pipe is used to exhaust the gas in the etching furnace body;
[0009] A wind speed detection component is connected to the connecting section and a detection probe of the wind speed detection component is arranged in the connecting section for detecting the wind speed flowing in the connecting section.
[0010] In an optional embodiment, the silicon carbide wafer etching furnace monitoring device further includes a first alarm device, the first alarm device is connected to the wind speed detection element, and the first alarm device is used to send an alarm signal.
[0011] In an optional embodiment, the silicon carbide wafer etching furnace monitoring device also includes a temperature sensor and a second alarm device. The temperature sensor is arranged in the etching furnace body, and the second alarm device can alarm according to the detection result of the temperature sensor.
[0012] In an optional embodiment, the temperature sensor is in communication connection with the heating module, and when the temperature sensor detects that the temperature of the etching furnace body exceeds a preset temperature, the heating module is turned off;
[0013] And / or, the wind speed detection component is in communication connection with the heating module, and when the wind speed detection component detects that the wind speed in the exhaust duct is lower than a preset wind speed, the heating module is turned off.
[0014] In an optional embodiment, the temperature sensor is disposed on the top of the etching furnace body.
[0015] In an optional embodiment, the temperature sensor is detachably connected to the etching furnace body, and / or the wind speed detection component is detachably connected to the connecting section.
[0016] In an optional embodiment, the first alarm device is a buzzer or an alarm light, and / or the second alarm device is a buzzer or an alarm light.
[0017] In an optional embodiment, the exhaust assembly further includes a wind speed display connected to the wind speed detection component, and the wind speed display is used to display the flow rate obtained by the wind speed detection component.
[0018] In an optional embodiment, the exhaust assembly also includes a first pressure sensor and a regulating valve arranged on the exhaust pipe, the first pressure sensor is arranged in the etching furnace body and is used to detect the pressure in the etching furnace body, and the regulating valve is used to adjust the opening of the exhaust pipe.
[0019] In an optional embodiment, the exhaust assembly further includes a filter device, which is connected to the exhaust pipe and is used to filter the gas exhausted from the exhaust pipe.
[0020] The beneficial effects of the embodiment of the utility model are as follows: the embodiment of the utility model provides a monitoring device for a silicon carbide wafer etching furnace, which includes an etching furnace body, an exhaust assembly, and a wind speed detection member. A heating module is installed in the etching furnace body, and the heating module is used to heat the etching furnace body. The exhaust assembly includes an exhaust pipe and a fan connected to each other. The exhaust pipe includes a connecting section and an exhaust section connected in sequence, wherein the connecting section extends along a preset straight line, and the connecting section is connected to the etching furnace body, and is used to discharge the gas in the etching furnace body. The connecting section of the exhaust pipe is connected to the etching furnace body, and the wind speed detection member is arranged in the connecting section of the exhaust pipe, and the detection probe of the wind speed detection member is arranged in the connecting section, which is used to detect the wind speed flowing in the exhaust pipe, and the exhaust condition of the fan can be detected in time according to the wind speed detection member. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the utility model and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying creative work.
[0022] Figure 1A schematic structural diagram of a silicon carbide wafer etching monitoring device provided in an embodiment of the utility model.
[0023] Icons: 1-silicon carbide wafer etching furnace monitoring device; 100-etching furnace body; 110-fixed seat; 120-heating module; 210-exhaust pipe; 211-connecting seat; 212-connecting section; 213-exhaust section; 300-wind speed detection component; 400-first alarm device; 500-temperature sensor; 600-second alarm device; 700-gas pipe; 800-wind speed display. DETAILED DESCRIPTION
[0024] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Generally, the components of the embodiments of the utility model described and shown in the drawings here can be arranged and designed in various different configurations.
[0025] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the present invention to be protected, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0026] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.
[0027] In the description of the present utility model, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate the orientation or position relationship based on the orientation or position relationship shown in the accompanying drawings, or the orientation or position relationship in which the utility model product is usually placed when in use, which is only for the convenience of describing the utility model and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.
[0028] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.
[0029] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0030] The specific structure of a silicon carbide wafer etching furnace monitoring device provided by an embodiment of the utility model and the corresponding technical effects it brings are described in detail below in conjunction with the patent drawings.
[0031] Please refer to Figure 1 The embodiment of the utility model provides a monitoring device 1 for a silicon carbide wafer etching furnace, which includes an etching furnace body 100 , an exhaust assembly and a wind speed detection component 300 .
[0032] Among them, a heating module 120 is installed in the etching furnace body 100, and the heating module 120 is used to heat the etching furnace body 100. The exhaust assembly includes an exhaust pipe 210 and a fan (not shown in the figure) connected to each other. The exhaust pipe 210 includes a connecting section 212 and an exhaust section 213 connected in sequence, wherein the connecting section 212 extends along a preset straight line, and the connecting section 212 is connected to the etching furnace body 100. The exhaust pipe 210 can discharge the gas in the etching furnace body 100 through the suction force generated by the fan.
[0033] The connecting section 212 of the exhaust duct 210 is connected to the etching furnace body 100, the wind speed detection component 300 is arranged in the connecting section 212 of the exhaust duct 210 and the detection probe of the wind speed detection component 300 is arranged in the connecting section 212, which is used to detect the wind speed flowing in the exhaust duct 210. It can be understood that since the connecting section 212 is connected to the etching furnace body 100, the connecting section 212 is close to the exhaust port of the etching furnace body 100, and the connecting section 212 of the exhaust duct 210 extends along a preset straight line, the gas flow rate in the connecting section 212 is relatively uniform. Therefore, the wind speed detected by the detection probe arranged in the straight section of the exhaust duct 210 can better reflect the average wind speed of the exhaust gas from the etching furnace body 100.
[0034] In some existing etching furnace bodies 100, the working condition of the exhaust fan cannot be accurately known. For example, in some existing etching furnace bodies 100, only a first pressure sensor is provided. The first pressure sensor is used to judge whether the working condition of the gas supply system or the exhaust component is normal, but the working condition of the exhaust fan cannot be accurately judged.
[0035] When the exhaust fan fails, the ambient temperature in the equipment rises too high, which will affect the etching reaction environment of the silicon carbide wafer, thereby affecting the etching effect of the silicon carbide wafer. In the present embodiment, a wind speed detection component 300 is provided on the connecting section 212 of the exhaust pipe 210. The wind speed detection component 300 is used to detect the working condition of the exhaust component. That is to say, the wind speed detection component 300 can detect the exhaust condition of the fan in time, so as to facilitate the user to judge the working condition of the exhaust fan.
[0036] Optionally, the wind speed detecting member 300 is disposed in the middle of the connecting section 212 in a preset straight line direction.
[0037] Optionally, in some embodiments, the number of wind speed detection components 300 can also be multiple, and the multiple wind speed detection components 300 are all arranged in the connecting section 212 and arranged at intervals along a preset straight line. It should be noted that in this embodiment, multiple can be understood as two or more. Of course, in some embodiments, the number of wind speed detection components 300 can also be one. When there are multiple wind speed detection components 300, when one of the wind speed detection components 300 is damaged, the remaining wind speed detection components 300 can still play the role of wind speed detection.
[0038] It should be noted that the silicon carbide wafer etching furnace monitoring device 1 also includes a gas supply system, which includes a connected gas pipe 700 and a gas source. The end of the gas pipe 700 away from the gas source is connected to the etching furnace body 100, and the gas source transports gas to the etching furnace body 100 through the gas pipe 700. It can be understood that the cooperation between the gas supply system and the exhaust assembly can make the etching furnace body 100 be in a preset reaction pressure environment to perform an etching reaction on the silicon carbide wafer.
[0039] The exhaust assembly is used to discharge the waste gas and by-products generated by the etching reaction, and can also cool the etching furnace body 100 to a certain extent to avoid excessive temperature in the etching furnace body 100. The gas supply system and the exhaust assembly are conventional means in the art and will not be described in detail here.
[0040] Optionally, the silicon carbide wafer etching furnace monitoring device 1 further includes a first alarm device 400 , which is connected to the wind speed detection element 300 , and is used to send out an alarm signal.
[0041] It can be understood that when the wind speed detection component 300 detects that the wind speed in the exhaust duct 210 is lower than the preset wind speed, the first alarm device 400 can send an alarm signal to remind the operator that the exhaust component is working abnormally, thereby reducing the occurrence of excessively high ambient temperature in the etching furnace body 100 caused by the abnormality of the wind speed detection component 300.
[0042] Optionally, the first alarm device 400 is a buzzer or an alarm light. In detail, in the present embodiment, the first alarm device 400 is a buzzer, that is, when the wind speed detection component 300 detects that the wind speed in the exhaust duct 210 is lower than the preset wind speed, the first alarm emits a buzzer to alert the operator.
[0043] Optionally, the exhaust assembly also includes a wind speed display 800 connected to the wind speed detection component 300, and the wind speed display 800 is used to display the flow rate detected by the wind speed detection component 300. It can be understood that the wind speed display 800 is used to allow operators to intuitively observe the flow rate of gas exhaust from the etching furnace body 100.
[0044] It should be noted that the wind speed detection element 300 is a conventional structure for gas flow rate detection, which will not be described in detail here.
[0045] Optionally, the exhaust assembly also includes a first pressure sensor (not shown in the figure) and a regulating valve (not shown in the figure) arranged on the exhaust pipe 210. The first pressure sensor is arranged in the etching furnace body 100 and is used to detect the pressure of the etching furnace body 100. The regulating valve is used to adjust the opening of the exhaust pipe 210. It can be understood that the regulating valve can facilitate the operator to adjust the opening of the exhaust pipe 210, and can adjust the flow rate of the gas discharged through the exhaust pipe.
[0046] Optionally, in order to facilitate the user to intuitively observe the pressure inside the etching furnace body 100, the exhaust assembly also includes a first pressure gauge communicatively connected to the first pressure sensor, and the first pressure gauge is used to display the pressure detected by the first pressure sensor. The first pressure gauge is arranged on the outside of the etching furnace body 100.
[0047] Optionally, it should be noted that in order to prevent the pressure from being detected after the first pressure sensor is damaged, a second pressure sensor (not shown in the figure) is also provided in the etching furnace body 100, and a second pressure gauge (not shown in the figure) communicatively connected to the second pressure sensor is also provided on the outside of the etching furnace body 100, and the second pressure gauge is used to display the pressure detected by the second pressure sensor.
[0048] Optionally, the wind speed detection component 300 is communicatively connected with the heating module 120. When the wind speed detection component 300 detects that the wind speed in the exhaust duct 210 is lower than a preset wind speed, the heating module 120 is turned off to avoid the ambient temperature in the etching furnace body 100 from overheating due to the abnormality of the wind speed detection component 300, thereby avoiding the occurrence of safety accidents caused by excessive temperature.
[0049] Optionally, the silicon carbide wafer etching furnace monitoring device 1 further includes a temperature sensor 500 and a second alarm device 600, wherein the temperature sensor 500 is disposed in the etching furnace body 100, and the second alarm device 600 can alarm according to the detection result of the temperature sensor 500. It can be understood that when the temperature sensor 500 detects that the temperature in the etching furnace is higher than a preset temperature, the second alarm device 600 can send an alarm signal.
[0050] Optionally, the temperature sensor 500 is disposed at the top of the etching furnace body 100. In the etching furnace body 100, a certain temperature uniformity is usually required to ensure the stability of the process. The top position is relatively far away from the direct heating source and the gas injection point, and is in the natural convection area of the gas in the furnace. Its temperature can better reflect the average condition of the overall temperature in the furnace and is more representative.
[0051] In some etching processes, the gas enters from the bottom or side of the furnace, flows upward, and is discharged from the top. Placing the temperature sensor 500 at the top can prevent the sensor from being directly exposed to highly corrosive or reactive process gases, thereby extending its service life.
[0052] Optionally, the second alarm device 600 is a buzzer or an alarm light. In this embodiment, the second alarm device 600 is also a buzzer, that is, when the temperature sensor 500 detects that the temperature in the etching furnace is higher than the preset temperature, the second alarm device 600 emits a buzzer. It should be noted that the buzzer emitted by the second alarm device 600 is different from the buzzer emitted by the first alarm device 400 to distinguish different fault sounds.
[0053] It should be noted that, in some embodiments, the first alarm device 400 and the second alarm device 600 may be identical alarm devices.
[0054] Optionally, the temperature sensor 500 is communicatively connected to the heating module 120. When the temperature sensor 500 detects that the temperature inside the etching furnace body 100 exceeds a preset temperature, the heating module 120 is turned off to prevent the ambient temperature inside the etching furnace body 100 from rising too high, thereby preventing safety accidents caused by excessive temperature.
[0055] Of course, in some other embodiments, the second alarm device 600 may also be other alarm structures.
[0056] Optionally, the temperature sensor 500 is detachably connected to the etching furnace body 100. It can be understood that a fixing seat 110 connected to the temperature sensor 500 is provided in the etching furnace body 100. The fixing seat 110 and the temperature sensor 500 can be detachably connected by means of threaded fasteners, or the fixing seat 110 and the temperature sensor 500 are connected by snap-fitting. The fixing seat 110 is insulated from the furnace body to prevent heat conduction from affecting the measurement results.
[0057] Optionally, the wind speed detection component 300 is detachably connected to the connecting section 212. It can be understood that the connecting section 212 can have a mounting hole, and the mounting hole has a connecting seat 211 with a standard interface, such as a connecting seat 211 with a thread or a flange. The connecting seat 211 has good sealing properties to prevent gas leakage. Therefore, the wind speed detection component 300 can extend the detection probe into the connecting section 212 through the interface, and achieve a detachable connection with the connecting seat 211 through a corresponding connecting structure, such as a threaded fastener.
[0058] Optionally, the exhaust assembly also includes a filtering device (not shown in the figure), which is connected to the exhaust pipe 210. The filtering device is used to filter the gas discharged from the exhaust pipe 210. It can be understood that the exhaust pipe 210 is used to discharge the waste gas after the reaction in the etching furnace. The filtering device can filter the waste gas. It can be understood that the filtering device can be a structure such as an activated carbon filter. The filtering device can be arranged in the connecting section 212 or the exhaust section 213.
[0059] In summary, a monitoring device 1 for a silicon carbide wafer etching furnace provided by an embodiment of the utility model includes an etching furnace body 100, an exhaust assembly and a wind speed detection member 300. A heating module 120 is installed in the etching furnace body 100, and the heating module 120 is used to heat the etching furnace body 100. The exhaust assembly includes an exhaust pipe 210 and a fan connected to each other, and the exhaust pipe 210 includes a connecting section 212 and an exhaust section 213 connected in sequence, wherein the connecting section 212 extends along a preset straight line, and the connecting section 212 is connected to the etching furnace body 100, and is used to discharge the gas in the etching furnace body 100. The connecting section 212 of the exhaust pipe 210 is connected to the etching furnace body 100, and the wind speed detection member 300 is arranged in the connecting section 212 of the exhaust pipe 210, and the detection probe of the wind speed detection member 300 is arranged in the connecting section 212 of the exhaust pipe 210, and is used to detect the wind speed flowing in the exhaust pipe 210, and can timely detect the exhaust condition of the fan according to the wind speed detection member 300.
[0060] The above description is only the preferred embodiment of the utility model, and is not intended to limit the utility model. For those skilled in the art, the utility model can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.
Claims
1. A monitoring device for a silicon carbide wafer etching furnace, characterized in that: include: An etching furnace body (100), wherein a heating module (120) is installed in the etching furnace body (100), and the heating module (120) is used to heat the etching furnace body (100); An exhaust assembly, the exhaust assembly comprising an exhaust pipe (210) and a fan connected to each other, the exhaust pipe (210) comprising a connecting section (212) and an exhaust section (213) connected in sequence, the connecting section (212) extending along a preset straight line, the connecting section (212) being connected to the etching furnace body (100), and the exhaust pipe (210) being used to exhaust gas in the etching furnace body (100); A wind speed detection component (300) is connected to the connecting section (212) and a detection probe of the wind speed detection component (300) is arranged in the connecting section (212) for detecting the wind speed flowing in the connecting section (212).
2. The silicon carbide wafer etching furnace monitoring device according to claim 1, characterized in that: The silicon carbide wafer etching furnace monitoring device further comprises a first alarm device (400), wherein the first alarm device (400) is connected to the wind speed detection element (300), and the first alarm device (400) is used to send out an alarm signal.
3. The silicon carbide wafer etching furnace monitoring device according to claim 2, characterized in that: The silicon carbide wafer etching furnace monitoring device also includes a temperature sensor (500) and a second alarm device (600). The temperature sensor (500) is arranged in the etching furnace body (100), and the second alarm device (600) can alarm according to the detection result of the temperature sensor (500).
4. The silicon carbide wafer etching furnace monitoring device according to claim 3, characterized in that: The temperature sensor (500) is in communication connection with the heating module (120), and when the temperature sensor (500) detects that the temperature of the etching furnace body (100) exceeds a preset temperature, the heating module (120) is turned off; And / or, the wind speed detection component (300) is communicatively connected to the heating module (120), and when the wind speed detection component (300) detects that the wind speed in the exhaust pipe (210) is lower than a preset wind speed, the heating module (120) is turned off.
5. The silicon carbide wafer etching furnace monitoring device according to claim 3, characterized in that: The temperature sensor (500) is arranged on the top of the etching furnace body (100).
6. The silicon carbide wafer etching furnace monitoring device according to claim 3, characterized in that: The temperature sensor (500) is detachably connected to the etching furnace body (100), and / or the wind speed detection component (300) is detachably connected to the connection section (212).
7. The silicon carbide wafer etching furnace monitoring device according to claim 3, characterized in that: The first alarm device (400) is a buzzer or an alarm light, and / or the second alarm device (600) is a buzzer or an alarm light.
8. The silicon carbide wafer etching furnace monitoring device according to claim 1, characterized in that: The air exhaust component further comprises a wind speed display (800) connected to the wind speed detection component (300), and the wind speed display (800) is used to display the flow velocity obtained by the wind speed detection component (300).
9. The silicon carbide wafer etching furnace monitoring device according to claim 1, characterized in that: The exhaust assembly further comprises a first pressure sensor and a regulating valve arranged on the exhaust pipe (210); the first pressure sensor is arranged in the etching furnace body (100) and is used to detect the pressure in the etching furnace body (100); and the regulating valve is used to adjust the opening of the exhaust pipe (210).
10. The silicon carbide wafer etching furnace monitoring device according to claim 1, characterized in that: The exhaust assembly further comprises a filtering device, the filtering device being connected to the exhaust pipe (210), and the filtering device being used to filter the gas exhausted from the exhaust pipe (210).