Semiconductor processing tool and heating module

Abstract

The utility model provides a semiconductor processing tool and a heating module. A semiconductor processing tool includes: a processing chamber; the supporting piece is used for fixing the wafer loaded into the chamber tool; an inlet for introducing a first gas into the chamber for processing the wafer; and an exhaust system that exhausts the gas from the chamber. The exhaust system includes: a first line coupled to the chamber to exhaust gas from the chamber; and a pump for drawing gas from the chamber via the first line. The tool further includes a heating module having: a second line coupled to the first line and a supply of a second gas through which the second gas flows from the supply into the first line; and a heating element housed in the second line, the heating element heating the second gas in the second line before the second gas flows into the first line.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor processing tool and a heating module. Background Art

[0002] The following relates to semiconductor technology, and more particularly, to heating modules and / or methods for vacuum pumping lines of semiconductor processing tools (such as, but not limited to, sub-atmospheric chemical vapor deposition (SACVD) tools, or more generally, chemical vapor deposition (CVD) tools). Utility Model Content

[0003] According to some embodiments, a semiconductor processing tool includes a processing chamber, a support contained in the processing chamber, a gas inlet system, an exhaust system, and a heating module. The processing chamber loads a semiconductor wafer into the processing chamber to perform a semiconductor process with the semiconductor processing tool. The support selectively fixes the semiconductor wafer loaded into the processing chamber to the support for processing by the semiconductor processing tool. The gas inlet system is combined with the semiconductor wafer in the processing chamber, and the gas inlet system selectively introduces a first gas into the processing chamber. The exhaust system selectively exhausts gas from the processing chamber, and the exhaust system includes: a first pipeline coupled to the processing chamber, and the gas is exhausted from the processing chamber via the first pipeline; and a pump coupled to the first pipeline, and the pump is used to selectively draw gas from the processing chamber via the first pipeline. The heating module includes: a second pipeline coupled to the first pipeline and a supply of a second gas, wherein the second gas selectively flows from the supply to the first pipeline via the second pipeline; and a heating element contained in the second pipeline, the heating element being selectively energized to heat the second gas flowing in the second pipeline before the second gas flows from the second pipeline to the first pipeline.

[0004] According to some embodiments, a semiconductor processing tool includes a processing chamber, a gas inlet system, an exhaust system, and a heating module. The processing chamber loads semiconductor wafers into the processing chamber to perform semiconductor processes with the semiconductor processing tool. The gas inlet system selectively introduces a first gas into the processing chamber. The exhaust system includes a first pipeline coupled to the processing chamber. The heating module includes a second pipeline coupled to the first pipeline and a supply of a second gas, a heating element contained in the second pipeline, a needle valve, a flow meter, and a pressure sensor. The second gas selectively flows from the supply to the first pipeline via the second pipeline. The heating element is selectively energized to heat the second gas flowing in the second pipeline before the second gas flows from the second pipeline to the first pipeline. The needle valve regulates the flow rate of the second gas entering the first pipeline via the second pipeline. The flow meter measures the flow rate of the gas through the second pipeline. The pressure sensor measures the pressure in the second pipeline.

[0005] According to some embodiments, a heating module is operatively coupled to an exhaust conduit and pumps exhaust gas from a processing chamber of a semiconductor processing tool via the exhaust conduit, the heating module comprising a supply line, a spiral heating element contained within the supply line, an insulating sheath, a pneumatic valve, and a needle valve. One end of the supply line is coupled to the exhaust conduit, and the supply line selectively supplies a nitrogen flow into the exhaust conduit. The spiral heating element is operable to selectively heat the nitrogen as it flows through the supply line above the spiral heating element. The insulating sheath is disposed around the exterior of the supply line at the location of the spiral heating element within the supply line. The pneumatic valve selectively opens and closes to start and end the flow of nitrogen from the supply line into the exhaust conduit, respectively. The needle valve is selectively operable to adjust the flow rate of nitrogen through the supply line. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The aspects of the present disclosure will be best understood from the following detailed description when read in conjunction with the accompanying drawings. Please note that, in accordance with standard practices in the industry, various features are not drawn to scale. In fact, the dimensions of the various features shown in the accompanying drawings may be arbitrarily increased or reduced for clarity of discussion.

[0007] Figure 1A and Figure 1B To show an illustration of a semiconductor processing tool according to some embodiments disclosed herein;

[0008] Figure 2 To show and Figure 1A and Figure 1B An illustration of a heating module according to some embodiments disclosed herein for use with a semiconductor processing tool is shown;

[0009] Figure 3 To show and Figure 2A diagrammatic illustration of a heating element according to some embodiments disclosed herein for use with a heating module is shown.

[0010]

Explanation of symbols

[0011] 100:Semiconductor processing tools

[0012] 105: Processing chamber body

[0013] 110: Vacuum chuck

[0014] 115: Process gas inlet pipeline

[0015] 120: Main pumping line

[0016] 122: Shunt tube

[0017] 125: Chuck vacuum line

[0018] 130: Chuck valve

[0019] 135: Chuck bypass valve

[0020] 140: Isolation valve

[0021] 145:Throttle valve

[0022] 150: Ballast valve

[0023] 155: Pump

[0024] 160: Numbers

[0025] 200: Supply pipeline

[0026] 202: First valve

[0027] 204: Second valve

[0028] 206:Flow switch

[0029] 208: Pressure gauge and / or sensor

[0030] 210: Flow meter and / or sensor

[0031] 212: Temperature sensor

[0032] 214: Heating element

[0033] 216: Power Supply

[0034] 218: Insulation sleeve

[0035] 220: Controller DETAILED DESCRIPTION

[0036] The following disclosure provides many different embodiments or examples for realizing the different features of the provided subject matter. Specific examples of components and configurations will be described below to simplify the present disclosure. Of course, these are only examples and are not intended to be limiting. For example, the first feature formed above or on the second feature in the subsequent description may include an embodiment in which the first feature and the second feature are formed in direct contact, and may also include an embodiment in which an additional feature may be formed between the first feature and the second feature so that the first feature and the second feature cannot be directly contacted. In addition, it will be understood that when an element is referred to as being "connected to" or "coupled to" another element, the element may be directly connected to or coupled to another element, or one or more intervening elements may be present. In addition, the present disclosure may repeat reference numbers and / or letters in various examples. This repetition is for the purpose of simplicity and clarity and does not itself specify the relationship between the various embodiments and / or configurations discussed.

[0037] Additionally, to facilitate description of the relationship of one element or feature to another element or feature as illustrated in the figures, spatially relative terms, such as "left," "right," "side," "back," "rear," "behind," "front," "below," "lower," "above," "above," "upper," and the like, may be used herein. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein may be similarly interpreted accordingly.

[0038] As used herein, the term "about" may include any numerical value that can vary without changing the basic function of the value. When used with a range, "about" also discloses a range defined by the absolute values ​​of the two endpoints, for example, "about 2 to about 4" also discloses a range of "2 to 4". The term "about" may refer to plus or minus 10% of the indicated number.

[0039] The manufacture of semiconductor devices is typically a multi-step process, with various process steps being performed using various semiconductor processing tools that are suitably equipped and / or provided for performing the various steps of the manufacturing process. According to some suitable embodiments disclosed herein, a semiconductor processing tool includes a processing chamber and an exhaust system that is operatively connected to and / or coupled to the processing chamber. Suitably, the exhaust system may include one or more pumps, valves, tubes, and / or conduits operatively coupled to the processing chamber, the one or more pumps, valves, tubes, and / or conduits cooperating to, for example, selectively create and / or maintain a desired vacuum or other pressure condition within the processing chamber and / or selectively evacuate or otherwise remove gases from the processing chamber (e.g., including residual process gases and / or carrier gases, unwanted byproducts, contaminants, particles, and / or the like suspended or otherwise contained in the processing chamber).

[0040] In practice, one or more semiconductor substrates and / or wafers may be loaded into the processing chamber of the semiconductor processing tool to perform one or more process steps associated with the fabrication and / or manufacturing of semiconductor devices. Various semiconductor process operations such as material deposition processes, etching processes, cleaning processes and / or other suitable processes may be performed in the processing chamber on the semiconductor substrate and / or wafer contained in the processing chamber to manufacture the desired semiconductor device. Suitably, the semiconductor processing tool may be used to perform various types of CVD, such as SACVD or other material deposition processes, on the semiconductor substrate and / or wafer contained in the processing chamber. In some suitable embodiments, the semiconductor processing tool may be used to perform, for example, material removal processes such as etching to remove material from the semiconductor substrate and / or wafer contained in the processing chamber. In some suitable embodiments, the semiconductor processing tool may be used to perform, for example, cleaning processes to remove unwanted byproducts and / or contaminants from the semiconductor substrate or wafer and / or from the processing chamber. In some suitable embodiments, the semiconductor processing tool is a CVD tool, a SACVD tool, a physical vapor deposition (PVD) tool, a decoupled plasma nitridation (DPN) tool, an atomic layer deposition (ALD) tool, a low pressure CVD (LPCVD) tool, an ultrahigh vacuum CVD (UHVCVD) tool, a reduced pressure CDV (RPCVD) tool, or other suitable material deposition tools, etching tools, cleaning tools, and / or the like.

[0041] In practice, some semiconductor processes are performed in the processing chamber under vacuum or other selected pressure conditions. Therefore, the exhaust system coupled to the processing chamber can be used to generate the desired vacuum and / or pressure conditions in the processing chamber. In addition, although the manufacturing process is performed in the processing chamber, one or more semiconductor substrates or wafers may be supported on one or more supporting surfaces and / or selectively fixed to one or more supporting surfaces, for example, using one or more vacuum chucks or the like. In some suitable embodiments, the vacuum source for the processing chamber can also be used to generate vacuum conditions at the supporting surface. In other words, the exhaust system can also be used as a vacuum source for one or more vacuum chucks housed in the processing chamber.

[0042] In some suitable embodiments, the exhaust system is selectively used to draw, evacuate and / or otherwise remove gases from the processing chamber, for example, including residual process gases and / or carrier gases, unwanted byproducts, contaminants, particulates and / or the like that may be suspended or otherwise contained in the processing chamber. In practice, process gases and / or carrier gases may be introduced into the processing chamber during a manufacturing process step, and / or byproducts or other gases may be generated in the processing chamber as a result of a manufacturing process step. Suitably, the exhaust system may selectively exhaust these gases from the processing chamber during or after a given manufacturing process step.

[0043] In some suitable embodiments disclosed herein, a heating module is operatively coupled to the exhaust system of the semiconductor processing tool. Advantageously, the heating module inhibits and / or mitigates undesirable deposition and / or accumulation of contaminants within an exhaust duct of the exhaust system by selectively flowing a heated gas into the exhaust duct to maintain the temperature of the gas flowing through the exhaust duct at a desired level. For example, the heated gas may be nitrogen or another suitable inert gas. One advantage of the heating module is that the heating module mitigates the accumulation of contaminants within the exhaust duct, thereby keeping the duct cleaner longer and / or preventing the exhaust duct from clogging and / or otherwise impeding the flow of gas through the exhaust duct. Another advantage is that the associated downtime of the semiconductor processing tool for cleaning purposes can be reduced (i.e., cleaning cycle time can be increased), and the overall production throughput of the tool can be increased, for example, compared to other examples without the mitigation provided by the heating module disclosed herein.

[0044] Certain semiconductor processes such as CVD, SACVD, LPCVD, etc. involve the introduction of various precursors, chemicals, process gases, carrier gases, and / or the like into the processing chamber. In some cases, tetraethoxysilane (TEOS) may be used in some SACVD processes, methyl-diethoxymethylsilane (mDEOS) precursors may be used in conjunction with the fabrication of extra-low k (ELK) semiconductor devices, alpha-terpinene (ATRP) precursors may be used in some processes, and the like. For example, in a SACVD process using TEOS, certain generated volatile organics including hydroxide (HO) and residual TEOS may be exhausted from the processing chamber via the exhaust line. As a result, in the exhaust line, a hydrolysis reaction may occur, thereby generating a large amount of TEOS polymer remaining and / or accumulating in the exhaust line. Typically, this reaction is a thermochemical reaction process, so that if the temperature in the exhaust line is too high, unexpected and / or unwanted reactions may occur, and if the temperature is too low, hydrolysis may be accelerated. Therefore, according to some suitable embodiments herein, the heating module advantageously heats the gas flowing from the heating module into the exhaust line to a temperature and / or maintains it at a temperature in the range between about 105° Celsius (C) and 110°C (inclusive).

[0045] According to some suitable embodiments disclosed herein, Figure 1A and Figure 1B A diagrammatic illustration of a semiconductor processing tool 100 is shown. The semiconductor processing tool may include a CVD tool, such as, for example, a SACVD tool and / or the like. Figure 1AAs shown, the semiconductor processing tool 100 may include two process chamber bodies 105, two vacuum chucks 110, a process gas inlet line 115, a main pumping line 120, two chuck vacuum lines 125, two chuck valves 130, two chuck bypass valves 135, an isolation valve 140, a throttling valve 145, a ballast valve 150, and two pumps 155. The following description will describe an implementation of the semiconductor processing tool 100 including the following: two process chamber bodies 105, two vacuum chucks 110, a single process gas inlet line 115, a single main pumping line 120, two chuck vacuum lines 125, two chuck valves 130, two chuck bypass valves 135, a single isolation valve 140, a single throttling valve 145, a single ballast valve 150, and two pumps 155. In practice, the semiconductor processing tool 100 may include additional or fewer processing chamber bodies 105, vacuum chucks 110, process gas inlet lines 115, main pumping lines 120, chuck vacuum lines 125, chuck valves 130, chuck bypass valves 135, isolation valves 140, throttling valves 145, ballast valves 150 and / or pumps 155.

[0046] The processing chamber body 105 may include a housing that defines a processing chamber for processing semiconductor devices (e.g., wafers) based on the functionality of the semiconductor processing tool 100. For example, the processing chamber may be a CVD processing chamber, a SACVD chamber, and / or the like. The processing chamber body 105 may be maintained at a pressure while the semiconductor devices are being processed. For example, the pressure within the processing chamber body 105 may be maintained at less than about one atmosphere while the semiconductor devices are being processed. The processing chamber body 105 may be sized and shaped to accommodate the vacuum chuck 110, components associated with the process gas inlet line 115, the semiconductor devices, and / or the like. The shape of the processing chamber body 105 may be cylindrical to facilitate processing of semiconductor devices, but may be other shapes, such as box-shaped, spherical, and / or the like. In some implementations, the processing chamber body 105 is constructed of a material or materials that resists wear and / or corrosion caused by process gases, semiconductor processes, pressures, temperatures, and / or the like associated with semiconductor processing tools. For example, the processing chamber body 105 can be constructed of stainless steel, aluminum, and / or the like. In some implementations, the processing chamber body 105 includes a plurality of walls having a plurality of thicknesses that provide a rigid structure capable of withstanding semiconductor processes, pressures, temperatures, and / or the like associated with semiconductor processing tools 100.

[0047] The vacuum chuck 110 may be disposed within the processing chamber body 105 and may be sized and shaped to support and secure a semiconductor device during processing by the semiconductor processing tool 100. For example, the vacuum chuck 110 may be circular and may support all or a portion of a circular semiconductor device. The vacuum chuck 110 may secure the semiconductor device by using a vacuum. The vacuum chuck 110 may be connected to one or more tubing fixtures (e.g., chuck vacuum line 125) through which air is drawn from the processing chamber body 105 and through one or more openings in the vacuum chuck 110 to create an air pressure differential in the processing chamber body 105. The air pressure differential includes a negative air pressure below the semiconductor device and a positive air pressure above the semiconductor device. The air pressure differential causes the semiconductor device to press against the vacuum chuck 110 as the positive and negative air pressures attempt to reach equilibrium in the processing chamber body 105. In some implementations, the vacuum chuck 110 is comprised of a material or materials that resist wear and / or corrosion caused by process gases, semiconductor processes, pressures, temperatures, and / or the like associated with the semiconductor processing tool 100. For example, the vacuum chuck 110 can be comprised of stainless steel, aluminum, anodized aluminum (e.g., gold or nickel), and / or the like. In some implementations, the vacuum chuck 110 includes a surface friction that holds the semiconductor device on a surface of the vacuum chuck 110.

[0048] The process gas inlet line 115 may include one or more tubing fixtures (e.g., tubes, pipes, valves, and / or the like) through which the process gas is provided to the processing chamber body 105. The process gas may include a gas used to process a semiconductor device based on the function of the semiconductor processing tool 100. For example, the process gas may include silicon gas, argon gas, nitrogen gas, TEOS, mDEOS, and / or the like. In some implementations, the process gas inlet line 115 is connected to two processing chamber bodies 105 so that the process gas is delivered to the processing chamber body 105. The process gas inlet line 115 may be coupled to one or more mechanisms (e.g., a gas box, a showerhead, a baffle plate, etc.) that evenly distribute the process gas into the processing chamber body 105 and onto the semiconductor device (e.g., such as Figure 1A). The process gas inlet line 115 can be sized and shaped to provide a large amount of process gas to the processing chamber body 105 so that the semiconductor processing tool 100 can process semiconductor devices. In some implementations, the process gas inlet line 115 is composed of a material or materials that are resistant to corrosion or damage caused by the process gas, pressure associated with the process gas, and / or the like. For example, the process gas inlet line 115 can be composed of polyvinyl chloride (PVC), chlorinated PVC (CPVC), polyvinylidene difluoride (PVDF), polypropylene, polyethylene, and / or the like.

[0049] The main pumping line 120 may include one or more tubing fixtures (e.g., tubes, pipes, valves, and / or the like) through which process gases are removed from the processing chamber body 105 after processing of the semiconductor devices. The main pumping line 120 may be connected to a pump 155, and the pump 155 may draw process gases and processing byproducts from the processing chamber body 105 through the main pumping line 120. The process gas inlet line 115 may be sized and shaped to provide a large amount of process gas to the processing chamber body 105 so that the semiconductor processing tool 100 can process semiconductor devices. In some implementations, the main pumping line 120 is constructed of one or more materials that resist corrosion or damage caused by the process gas, the pressure associated with the process gas, and / or the like. For example, the main pumping line 120 may be constructed of PVC, CPVC, PVDF, polypropylene, polyethylene, and / or the like. Additional details of the main pumping line 120 will be described in conjunction with the accompanying drawings. Figure 1B Provided below.

[0050] The chuck vacuum line 125 may include one or more tubing fixtures (e.g., tubes, pipes, valves, and / or the like) through which air is drawn from the process chamber body 105 and through one or more openings in the vacuum chuck 110 to create an air pressure differential in the process chamber body 105. The air pressure differential includes a negative air pressure below the semiconductor device and a positive air pressure above the semiconductor device. The air pressure differential causes the semiconductor device to press against the vacuum chuck 110 as the positive and negative air pressures attempt to reach equilibrium in the process chamber body 105. In some implementations, the chuck vacuum line 125 is connected to the main pumping line 120, and air is drawn through the chuck vacuum line 125 via a pump 155, which draws process gases and process byproducts from the process chamber body 105 through the main pumping line 120. In some implementations, the chuck vacuum line 125 is constructed of a material or materials that resist corrosion or damage caused by process gases, air pressure differentials, and / or the like. For example, the chuck vacuum line 125 may be constructed of PVC, CPVC, PVDF, polypropylene, polyethylene, and / or the like. Additional details of the chuck vacuum line 125 will be described in conjunction with Figure 1B Provided below. In some suitable embodiments, the vacuum chuck 110 may be provided with a heater for selectively heating a semiconductor device secured to the vacuum chuck in conjunction with an ongoing semiconductor process.

[0051] The chuck valve 130 may include a device that regulates, directs, or controls the flow of a fluid (e.g., a gas) by opening, closing, or partially blocking various passages. For example, the chuck valve 130 may be connected to the chuck vacuum line 125 and may control the level of vacuum (e.g., negative air pressure below the semiconductor device) applied to the vacuum chuck 110 by the pump 155 via the chuck vacuum line 125. In some implementations, the chuck valve 130 is constructed of a material or materials that resist corrosion or damage caused by process gases, air pressure differentials, and / or the like. For example, one or more components of the chuck valve 130 may be constructed of steel, aluminum, PVC, CPVC, PVDF, polypropylene, polyethylene, and / or the like.

[0052] The cartridge bypass valve 135 may include a device that regulates, directs, or controls the flow of a fluid (e.g., a gas) by opening, closing, or partially blocking various passages. For example, the cartridge bypass valve 135 may be connected to the cartridge vacuum line 125 and may control whether the cartridge vacuum line 125 is connected to the main pumping line 120 at a first location (e.g., upstream of the isolation valve 140 and the throttle valve 145) or at a second location (e.g., downstream of the throttle valve 145). In some implementations, the cartridge bypass valve 135 is constructed of a material or materials that resist corrosion or damage caused by process gases, air pressure differentials, and / or the like. For example, one or more components of the cartridge bypass valve 135 may be constructed of steel, aluminum, PVC, CPVC, PVDF, polypropylene, polyethylene, and / or the like.

[0053] The isolation valve 140 may include a device that regulates, directs, or controls the flow of a fluid (e.g., a gas) by opening, closing, or partially blocking various passages. For example, the isolation valve 140 may be connected to the main pumping line 120 and may stop the flow of process gas through the main pumping line 120 (e.g., for maintenance purposes, safety purposes, and / or the like). In some implementations, the isolation valve 140 is constructed of a material or materials that resist corrosion or damage caused by process gas, air pressure differentials, and / or the like. For example, one or more components of the isolation valve 140 may be constructed of steel, aluminum, PVC, CPVC, PVDF, polypropylene, polyethylene, and / or the like.

[0054] The throttle valve 145 may include a device that regulates, directs, or controls the flow of a fluid (e.g., a gas) by opening, closing, or partially blocking various passages. For example, the throttle valve 145 may be connected to the main pumping line 120 and may control the level of vacuum applied to the main pumping line 120 by the pump 155. In some implementations, the throttle valve 145 is constructed of a material or materials that resist corrosion or damage caused by process gases, air pressure differentials, and / or the like. For example, one or more components of the throttle valve 145 may be constructed of steel, aluminum, PVC, CPVC, PVDF, polypropylene, polyethylene, and / or the like.

[0055] The ballast valve 150 may include a device that regulates, directs, or controls the flow of a fluid (e.g., a gas) by opening, closing, or partially blocking various passages. For example, the ballast valve 150 may be connected to the main pumping line 120 and may prevent the pump from reaching the highest vacuum level achievable by the pump 155. In some implementations, the ballast valve 150 is constructed of a material or materials that resist corrosion or damage caused by process gases, air pressure differentials, and / or the like. For example, one or more components of the ballast valve 150 may be constructed of steel, aluminum, PVC, CPVC, PVDF, polypropylene, polyethylene, and / or the like.

[0056] The pump 155 may include a device that removes a fluid (e.g., a gas) from a sealed volume to achieve a partial vacuum. For example, the pump 155 may be connected to the main pumping line 120 and may remove process gases, process byproducts, and / or the like from the main pumping line 120. In some implementations, the pump 155 is constructed of a material or materials that resist corrosion or damage caused by process gases, air pressure differentials, and / or the like. For example, one or more components of the pump 155 may be constructed of steel, aluminum, PVC, CPVC, PVDF, polypropylene, polyethylene, and / or the like. In some implementations, the semiconductor processing tool 100 may include a controller (not shown) that controls (e.g., opens, closes, partially opens, partially closes, and / or similarly operates) the cartridge valve 130, the cartridge bypass valve 135, the isolation valve 140, the throttle valve 145, and / or the ballast valve 150, and controls (e.g., opens or closes) the pump 155.

[0057] In some implementations, such as Figure 1B As shown on the left in FIG. 1 , the chuck vacuum line 125 may be connected to the main pumping line 120 downstream of the throttle valve 145. Alternatively or additionally, the chuck vacuum line 125 may be connected to the main pumping line 120 upstream of the isolation valve 140 and the throttle valve 145. Figure 1B As shown in the figure to the right, a portion of the chuck vacuum line 125 can be disposed within the main pumping line 120. As indicated by reference numeral 160, the orientation of a portion of the main pumping line 120 (e.g., the portion of the main pumping line 120 where the chuck vacuum line 125 is disposed) can be substantially parallel to the orientation of a portion of the chuck vacuum line 125 (e.g., the portion where air exits the chuck vacuum line 125). Figure 1B As further shown, the orientation of a portion of the main pumping line 120 and the orientation of a portion of the chuck vacuum line 125 can be parallel to the flow direction of the process gas through the main pumping line 120 (e.g., in FIG. Figure 1B from right to left).

[0058] Previous configurations orient the chuck vacuum line 125 at an angle approaching ninety degrees to the orientation and flow direction of the main pumping line 120. These previous configurations reduce the flow of process gas through the main pumping line 120 in the direction of flow and cause process byproducts from the chuck vacuum line 125 to be deposited in the main pumping line 120 at an angle approaching ninety degrees. This causes the main pumping line 120 to gradually fill with process byproducts, thus reducing and / or restricting the air flow through the main pumping line 120. In contrast, a parallel configuration of the orientation of a portion of the main pumping line 120 and the orientation of a portion of the chuck vacuum line 125 does not reduce the flow of process gas through the main pumping line 120 in the direction of flow. Thus, the parallel configuration prevents the accumulation of process byproducts on the inner wall of the main pumping line 120.

[0059] As indicated above, Figure 1A and Figure 1B These are provided only as one or more examples. Other examples may differ from those described herein. Figure 1A and Figure 1B Described example.

[0060] Reference now Figure 2 , showing a heating module according to some suitable embodiments disclosed herein. In practice, the heating module may be operatively coupled to Figure 1A and Figure 1B 1. As shown, the heating module may include a supply line 200, a first valve 202, a second valve 204, a flow switch 206, a pressure gauge and / or sensor 208, a flow meter and / or sensor 210, a temperature sensor 212, a heating element 214 (such as Figure 3 ), power supply 216, thermal jacket 218 and controller 220. Typically, the heating module selectively provides a heated gas flow to, for example, the main pumping line 120 of the exhaust system to inhibit and / or 214 reduce the deposition and / or accumulation of pollutants in the main pumping line 120.

[0061] In some suitable embodiments, the supply line 200 is connected and / or operatively coupled at a first end thereof to a gas supply to selectively receive gas from the gas supply. For example, the gas provided to the supply line 200 from the supply may be nitrogen or another suitable inert gas. In some suitable embodiments, the second end of the supply line 200 is connected and / or operatively coupled to the main pumping line 120. As shown, the second end of the supply line 200 may be connected and / or operatively coupled to the main pumping line 120 at a location downstream of the throttle valve 145 and upstream of the diverter tube 122. In some suitable embodiments, the second end of the supply line 200 may be connected and / or operatively coupled to the main pumping line 120 at a location downstream of where the chuck vacuum line 125 is connected and / or coupled to the main pumping line 120. Suitably, the supply line 200 is connected and / or operatively coupled to the main pumping line 120 upstream of the diverter tube and / or above or opposite the port, which may advantageously avoid potential gas backwash.

[0062] In some suitable embodiments, the first valve 202 regulates the flow rate of the heated gas entering the main pumping line 120 through the supply line 200. For example, the first valve 202 may be a needle valve or the like. Suitably, the operation of the first valve may be automatically controlled by the controller 220. In some suitable embodiments, the flow rate of the heated gas through the supply line 200 may be measured, monitored, sensed and / or detected by the flow meter and / or sensor 210. In practice, the flow meter and / or sensor 210 may provide a signal indicating the flow rate of the heated gas through the supply line 200 to the controller 220. Accordingly, the controller 220 may automatically control and / or adjust the first valve 202 in response to the received signal to achieve a desired or set flow rate of the heated gas through the supply line 200 and into the main pumping line 120.

[0063] In some suitable embodiments, the second valve 204 is automatically controlled, for example, by the controller 220, to selectively start and end the flow of heated gas from the supply line 200 to the main pumping line 120 in coordination with a semiconductor process performed with the semiconductor processing tool 100. For example, the second valve 204 may be a pneumatic valve or the like. In practice, the second valve 204 may be selectively opened and closed to respectively start and end the flow of heated gas from the supply line 200 to the main pumping line 120.

[0064] In some suitable embodiments, the flow switch 206 may be a normally open flow switch, thereby allowing free flow of gas through the supply line 200. In practice, the flow switch may be closed, for example, under automatic control of the controller 220 to inhibit gas flow through the supply line 200 to protect the gas supply when an established condition is detected by the controller 220, and the controller 220 determines that the gas supply should be protected by closing the flow switch.

[0065] In some suitable embodiments, the heating element 214 is contained within the supply line 200. For example, in some suitable embodiments, the heating element 214 can be a halogen lamp. In some suitable embodiments, the heating element 214 has a spiral shape, for example, Figure 3As shown. The shape and / or configuration of the heating element 214 within the supply line 200 has the advantage of providing direct and / or effective heating of the gas flowing within the supply line 200 (above, through, beyond and / or around the heating element 214). In some suitable embodiments, the supply line 200 (or at least the portion or section thereof containing the heating element 214) may be constructed of a stainless steel tube or another suitable metal tube or the like. In practice, one or more Teflon or polytetrafluoroethylene (PTFE) or other suitable O-rings or other heat-resistant gaskets or the like may be used to create a suitable seal between various components of the heating module, for example, between sections of the supply line 200 and in particular between a section of the supply line 200 containing the heating element 214 and a section of the supply line 200 adjacent to the section. In some suitable embodiments, an insulating blanket or sleeve 218 may be wrapped and / or otherwise disposed around the exterior of the supply line 200 at or near the location where the heating element 214 is contained within the supply line 200. In practice, the blanket or sleeve 218 may be constructed of cotton, Teflon, PTFE, or other suitable heat resistant and / or insulating material and / or cloth and / or combinations thereof. Using an insulating blanket and / or sleeve 218 in this manner has the advantage of making the heating module more efficient by reducing the loss of heat generated by the heating element 214 through the wall of the supply line 200.

[0066] In some suitable embodiments, the heating element 214 is connected and / or operatively coupled to a power supply 216 that selectively supplies power to and / or energizes the heating element 214 to selectively generate heat from the spiral-shaped heating element so as to selectively heat the gas flowing through the supply line 200 before the gas is injected into the main pumping line 120. In practice, the power supply may be automatically controlled by the controller 220. Suitably, the temperature sensor 212 may measure, monitor, sense and / or detect the temperature of the gas flowing in the supply line 200, for example at or near the location of the heating element 214 or just downstream of the location, and in turn provide a signal indicative of the temperature to the controller 220. In response to the signal received from the temperature sensor 212, the controller may control and / or adjust the power supply 216 accordingly to appropriately and / or selectively energize the heating element 214. In some suitable embodiments, the controller 220 controls the power supply 216 to energize the heating element 214 so that the gas is heated by the heating element 214 to a temperature and / or maintained at a temperature within a range between approximately 105° C. and approximately 110° C., inclusive.

[0067] As described above, the flow meter and / or sensor 210 can measure, monitor, sense and / or detect the flow rate of gas through the supply line 200 and accordingly provide a signal indicating the flow rate to the controller 220. In some suitable embodiments, the pressure gauge and / or sensor 208 can measure, monitor, sense and / or detect the pressure within the supply line 200 and accordingly provide a signal indicating the pressure to the controller 220. Based on the signals received from the pressure gauge and / or sensor 208 and the flow meter and / or sensor 210, the controller 220 can detect and / or determine that there is no gas or an insufficient amount of gas supplied and / or obtained from the gas supply based on the signals received by the controller 220. In these cases, the controller 220 can automatically cut off, interrupt, limit and / or otherwise suspend the supply of power from the power supply 216 to the heating element 214. This has the advantage that no heat is generated from the heating element 214 when there is no gas or an insufficient amount of gas flowing through the supply line 200 and / or when there is no gas or an insufficient supply of gas obtained from the gas supply, thereby protecting the heating module from overheating, which could potentially cause damage to the heating module, the exhaust system, the semiconductor processing tool 100 and / or its components.

[0068] In the following, some further illustrative embodiments are described.

[0069] In some embodiments, a semiconductor processing tool includes: a processing chamber into which a semiconductor wafer is loaded to perform a semiconductor process with the tool; a support contained in the processing chamber, the support selectively fixes the semiconductor wafer loaded into the processing chamber to the support for processing by the tool; a gas inlet system, in conjunction with processing the semiconductor wafer in the processing chamber, the gas inlet system selectively introduces a first gas into the processing chamber; and an exhaust system, the exhaust system selectively exhausts gas from the processing chamber. Suitably, the exhaust system includes: a first pipeline coupled to the processing chamber, gas is exhausted from the processing chamber via the first pipeline; and a pump coupled to the first pipeline, the pump is used to selectively draw gas from the processing chamber via the first pipeline. The tool further includes a heating module having: a second pipeline coupled to the first pipeline and a supply of a second gas, wherein the second gas selectively flows from the supply to the first pipeline via the second pipeline; and a heating element contained in the second pipeline, the heating element being selectively energized to heat the second gas flowing in the second pipeline before the second gas flows from the second pipeline to the first pipeline.

[0070] In some additional embodiments, the heating module further includes at least one of the following: a flow switch that selectively opens and closes to selectively allow and block a gas flow through the second pipeline, respectively; a first valve that regulates a flow rate of the second gas entering the first pipeline through the second pipeline; a flow meter that measures a flow rate of the gas through the second pipeline; a pressure sensor that measures a pressure within the second pipeline; and a temperature sensor that measures a temperature of the second gas within the second pipeline.

[0071] In further additional embodiments, the heating module further comprises: a power supply that selectively energizes the heating element to generate heat from the heating element.

[0072] In some additional embodiments, the heating module further includes: a controller that controls at least one of the flow switch, the first valve, and the power supply in response to a signal received from at least one of the flow meter, the pressure sensor, and the temperature sensor.

[0073] In yet further embodiments, the controller controls the power supply so that the heating element is not energized when an insufficient flow of the second gas from the supply is detected in the second line.

[0074] In some additional embodiments, the heating module further comprises: a thermal insulation sleeve wrapped around the second pipeline at a position of the heating element within the second pipeline.

[0075] In some embodiments, the second gas is nitrogen.

[0076] In yet further embodiments, the heating module heats the second gas to a temperature within a range between 105°C and 110°C, inclusive.

[0077] In some embodiments, the heating element is a halogen lamp.

[0078] In still other embodiments, the heating module further comprises: a valve automatically controlled to selectively start and end a flow of the second gas from the second line into the first line in coordination with the semiconductor process performed by the tool.

[0079] In yet another embodiment, a semiconductor manufacturing method includes: loading a semiconductor substrate into a processing chamber of a semiconductor processing tool; fixing the semiconductor substrate with a vacuum chuck housed in the processing chamber; introducing process gas into the processing chamber in conjunction with a semiconductor process performed on the semiconductor substrate in the processing chamber; pumping exhaust gas from the processing chamber through an exhaust pipe; obtaining an inert gas from a gas supply via a supply line coupled to a gas supply at a first end of the supply line, the supply line coupled to the exhaust pipe at a second end of the supply line; heating the inert gas in the supply line; and automatically controlling a first valve in conjunction with the semiconductor process to selectively start and end a flow of the heated inert gas from the supply line to the exhaust pipe.

[0080] In some further embodiments, the heating is performed from within the supply line by a heating element housed within the supply line.

[0081] In some additional embodiments, the method further includes: measuring a temperature of the inert gas within the supply line; and automatically controlling the heating element in response to the measurement.

[0082] In some embodiments, the method further comprises: measuring a flow rate of the inert gas in the supply line; and automatically controlling a second valve in response to the measurement to adjust the flow rate.

[0083] In some embodiments, the method further comprises: detecting an insufficient flow of the inert gas from the supply within the supply line; and suspending the heating in response to the detection.

[0084] In some further embodiments, the method further comprises: monitoring a pressure within the supply line.

[0085] In some embodiments, a semiconductor processing tool includes a processing chamber, a gas inlet system, an exhaust system and a heating module. The processing chamber loads semiconductor wafers into the processing chamber to perform semiconductor processes with the semiconductor processing tool. The gas inlet system selectively introduces a first gas into the processing chamber. The exhaust system includes a first pipeline coupled to the processing chamber. The heating module includes a second pipeline coupled to the first pipeline and a supply of a second gas, a heating element contained in the second pipeline, a needle valve, a flow meter and a pressure sensor. The second gas selectively flows from the supply to the first pipeline via the second pipeline. The heating element is selectively energized to heat the second gas flowing in the second pipeline before the second gas flows from the second pipeline to the first pipeline. The needle valve regulates the flow rate of the second gas entering the first pipeline via the second pipeline. The flow meter measures the flow rate of the gas passing through the second pipeline. The pressure sensor measures the pressure in the second pipeline. In some embodiments, the heating module further includes a flow switch and a temperature sensor. The flow switch selectively opens and closes to selectively allow and block the gas flow through the second pipeline, respectively. The temperature sensor measures the temperature of the second gas in the second pipeline. In some embodiments, the heating module further includes a controller. The controller controls at least one of the flow switch, the needle valve, and the power supply in response to a signal received from at least one of the flow meter, the pressure sensor, and the temperature sensor. In some embodiments, the heating module further includes a pneumatic valve. The pneumatic valve is automatically controlled by the controller to selectively start and end the flow of the second gas from the second pipeline to the first pipeline in conjunction with the semiconductor process performed with the semiconductor processing tool.

[0086] In still other embodiments, a heating module is operatively coupled to an exhaust conduit through which exhaust gas is pumped from a processing chamber of a semiconductor processing tool. Suitably, the heating module includes: a supply line having an end coupled to the exhaust conduit, the supply line selectively supplying a nitrogen gas flow into the exhaust conduit; a spiral heating element contained within the supply line, the spiral heating element operable to selectively heat the nitrogen gas as it flows through the supply line above the spiral heating element; an insulating wrap disposed around an exterior of the supply line at a location within the supply line where the spiral heating element is located; a pneumatic valve capable of selectively opening and closing to respectively start and end the flow of nitrogen gas from the supply line into the exhaust conduit; and a needle valve selectively operable to adjust a flow rate of the nitrogen gas through the supply line.

[0087] In yet further embodiments, the heating module further includes a power supply operatively coupled to the spiral shaped heating element, the power supply selectively providing power to the spiral shaped heating element to selectively generate heat from the spiral shaped heating element.

[0088] In yet another plurality of embodiments, the heating module further comprises a controller that automatically controls operation of at least one of the pneumatic valve, the needle valve, and the power supply in conjunction with a semiconductor process performed in the processing chamber of the semiconductor processing tool.

[0089] In yet another embodiment, the heated nitrogen flowing from the heating module into the exhaust conduit mitigates a buildup of pollutants within the exhaust conduit.

[0090] The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art should understand that the present disclosure can be easily used as a basis for designing or modifying other processes and structures for achieving the same purpose and / or achieving the same advantages as the embodiments described herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that the various changes, substitutions, and modifications herein can be made by the skilled artisans without departing from the spirit and scope of the present disclosure.

Claims

1. A semiconductor processing tool, characterized in that Include: a processing chamber into which a semiconductor wafer is loaded to perform a semiconductor process using the semiconductor processing tool; a support contained in the processing chamber, the support selectively securing the semiconductor wafer loaded into the processing chamber to the support for processing by the semiconductor processing tool; a gas inlet system, in conjunction with processing the semiconductor wafer in the processing chamber, the gas inlet system selectively introducing a first gas into the processing chamber; an exhaust system for selectively exhausting gas from the processing chamber, the exhaust system comprising: a first pipeline coupled to the processing chamber, through which gas is exhausted from the processing chamber; and a pump coupled to the first line, the pump for selectively pumping gas from the processing chamber through the first line; and A heating module, the heating module comprising: a second line coupled to the first line and to a gas supply of a second gas, wherein the second gas selectively flows from the gas supply to the first line through the second line; and A heating element is contained in the second line and is selectively energized to heat the second gas flowing in the second line before the second gas flows from the second line to the first line.

2. The semiconductor processing tool according to claim 1, wherein: The heating module further comprises at least one of the following: a flow switch that selectively opens and closes to selectively allow and block, respectively, a gas flow through the second pipeline; a first valve that adjusts a flow rate of the second gas entering the first pipeline through the second pipeline; a flow meter that measures a flow rate of gas passing through the second pipeline; a pressure sensor, the pressure sensor measuring a pressure in the second pipeline; and A temperature sensor is provided for measuring a temperature of the second gas in the second pipeline.

3. The semiconductor processing tool according to claim 2, wherein: The heating module further comprises: A power supply selectively energizes the heating element to generate heat from the heating element.

4. The semiconductor processing tool according to claim 1, wherein: The heating module further comprises: An insulating sleeve is wrapped around the second pipeline at a location of the heating element within the second pipeline.

5. A semiconductor processing tool, characterized in that: Include: a processing chamber into which a semiconductor wafer is loaded to perform a semiconductor process using the semiconductor processing tool; a gas inlet system for selectively introducing a first gas into the processing chamber; An exhaust system comprising: a first pipeline coupled to the processing chamber; and A heating module, comprising: a second line coupled to the first line and to a gas supply of a second gas, wherein the second gas selectively flows from the gas supply to the first line via the second line; a heating element contained in the second line, the heating element being selectively energized to heat the second gas flowing in the second line before the second gas flows from the second line into the first line; a needle valve to adjust a flow rate of the second gas entering the first pipeline through the second pipeline; a flow meter to measure a flow rate of gas passing through the second pipeline; and A pressure sensor measures a pressure in the second pipeline.

6. The semiconductor processing tool of claim 5, wherein: The heating module further comprises: a flow switch that selectively opens and closes to selectively allow and block, respectively, a gas flow through the second pipeline; and A temperature sensor measures a temperature of the second gas in the second pipeline.

7. The semiconductor processing tool of claim 6, wherein: The heating module further comprises: A controller controls at least one of the flow switch, the needle valve, and a power supply in response to a signal received from at least one of the flow meter, the pressure sensor, and the temperature sensor.

8. The semiconductor processing tool of claim 7, wherein: The heating module further comprises: A pneumatic valve is automatically controlled by the controller to selectively start and end the flow of the second gas from the second line into the first line in conjunction with the semiconductor process performed by the semiconductor processing tool.

9. A heating module operatively coupled to an exhaust conduit and pumping exhaust gas from a processing chamber of a semiconductor processing tool through the exhaust conduit, characterized in that The heating module contains: a supply line, one end of which is coupled to the exhaust pipe, the supply line selectively supplies a nitrogen flow into the exhaust pipe; a spiral heating element contained within the supply line, the spiral heating element being operable to selectively heat a nitrogen gas of the nitrogen gas stream as the nitrogen gas stream passes through the supply line above the spiral heating element; an insulating wrap disposed about an exterior of the supply line at a location of the spiral-shaped heating element within the supply line; a pneumatic valve that selectively opens and closes to respectively start and end the flow of nitrogen from the supply line into the exhaust conduit; and A needle valve is selectively operable to regulate a flow rate of the nitrogen gas through the supply line.

10. The heating module according to claim 9, characterized in that: The heating module further comprises: A power supply is operatively coupled to the spiral shaped heating element, the power supply selectively providing power to the spiral shaped heating element to selectively generate heat from the spiral shaped heating element.

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