Pump plate assembly used in cavity, cavity and semiconductor device

Abstract

The utility model provides a pump plate assembly used in a cavity, a cavity and a semiconductor device, the pump plate assembly comprises a pump ring and an air flow control assembly, the pump ring is arranged in a cavity and is provided with an air flow channel used for releasing preset air in the cavity out of the cavity; the airflow channel is provided with a plurality of airflow inlets formed in the face, close to the surrounding area, of the pump ring so that preset gas can be guided into the airflow channel through the airflow inlets to be released, and the airflow control assembly is arranged in the airflow channel. The airflow control assembly communicates with the airflow inlets so as to control the consistency of the flow of gas released after the gas flows through the airflow inlets. According to the pump plate assembly, preset gas release consistency can be achieved, the wafer surface etching uniformity can be improved when the pump plate assembly is applied to a semiconductor cleaning cavity, and good technological adaptability and applicability are met further through flexible design of the structure of the gas flow control assembly. The process stability, the product quality and the yield of the cavity and the semiconductor device are all effectively improved.

Description

Technical Field

[0001] The utility model belongs to the technical field of integrated circuit production and equipment, and relates to a pump plate component used in a chamber, a chamber and a semiconductor device. Background Art

[0002] With the development of advanced process technology, the epitaxial growth (EPI) process is required in the semiconductor process to grow the source and drain ends of the MOS tube. EPI is a reduced pressure vapor deposition process. Reaction gases such as SIH4, DCS, HCl, PH3 and GeH4 are introduced into the epitaxial growth chamber, and then epitaxial films such as SiP and SiGeB are grown at high temperature. Since SiP, SiGeB and other film layers are difficult to grow on the oxide surface, the wafer to be epitaxially grown needs special treatment to remove the natural oxide layer on its surface. For example, the oxide layer is etched and cleaned through a semiconductor cleaning chamber (SICONI chamber for short), and then the epitaxial growth is carried out in the epitaxial growth chamber. When the wafer is placed in a semiconductor cleaning chamber, the etching gas (for example, NF3, NH3) in the chamber will react under the action of high-frequency plasma to generate ammonium fluoride. After the ammonium fluoride reacts with the oxide layer on the surface of the wafer, it will generate solid (NH4)2SiF6, which will sublime and turn into gas in the subsequent heating process to achieve the purpose of etching the oxide on the surface of the wafer.

[0003] However, in actual practice, it is found that although the currently designed semiconductor cleaning chamber has very good distribution uniformity for etching gas (achieved by the gas flow distribution component set inside it), the etching uniformity of the oxide layer on the surface of the wafer flowing out of the semiconductor cleaning chamber is not ideal. For details, please refer to Figure 1 , which is a schematic diagram showing the etching effect on the wafer surface after an oxide layer etching process is performed in a semiconductor cleaning chamber. In a local area of ​​the wafer (e.g., Figure 1 There is a cold spot with low etching amount (the average etching amount is 18.7, and the etching amount in the cold spot area is about 17.4) in the wafer edge area shown in the dotted box, which makes the overall uniformity or consistency of the wafer surface poor, thus affecting the product quality and yield.

[0004] Therefore, how to provide a pump plate assembly, a chamber and a semiconductor device for use in a chamber to improve the etching consistency of the surface oxide layer of the wafer in the semiconductor cleaning chamber has become an important technical problem that needs to be urgently solved by technical personnel in this field.

[0005] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of the present application. Utility Model Content

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a pump plate assembly, a chamber and a semiconductor device for use in a chamber, so as to solve the problem in the prior art that the etching consistency of the semiconductor cleaning chamber after performing the wafer surface oxide layer etching process needs to be improved.

[0007] To achieve the above objectives and other related objectives, the utility model provides a pump plate assembly for use in a chamber, comprising:

[0008] A pump ring is placed in a cavity, the pump ring is provided with an airflow channel for releasing the preset gas in the cavity out of the cavity, the airflow channel has a plurality of airflow inlets opened on one side of the pump ring close to the area surrounded by the pump ring so as to introduce the preset gas into the airflow channel through the plurality of airflow inlets for release;

[0009] The airflow control component is arranged in the airflow channel, and the airflow control component is connected with the plurality of airflow outlets to control the consistency of the flow rate of the gas released after passing through each of the airflow inlets.

[0010] Optionally, the pump ring includes a first structural layer, the first structural layer is provided with an annular groove and a plurality of exhaust holes, wherein the annular groove opens from a side of the first structural layer away from the area surrounded by the pump ring and extends toward a side of the first structural layer close to the area surrounded by the pump ring to partially penetrate the first structural layer, the exhaust holes open from side walls of the annular groove extending in the vertical direction and penetrate the first structural layer, and one end of the exhaust holes located on a side of the first structural layer close to the area surrounded by the pump ring constitutes the airflow inlet.

[0011] Optionally, the airflow control component is disposed in the annular groove, and the airflow control component is provided with a plurality of exhaust ducts, the plurality of exhaust ducts are connected to the plurality of exhaust holes in a one-to-one correspondence, and a valve is provided in the exhaust duct to control the gas flow flowing into the exhaust duct through the exhaust holes.

[0012] Optionally, the valve includes an adjusting member rotatably arranged to adjust the size of the valve opening.

[0013] Optionally, the pump ring further comprises a second structural layer located below the first structural layer, the second structural layer is provided with a groove, and the groove is communicated with the annular groove.

[0014] Optionally, the pump ring also includes a transition port and a release port, the transition port vertically connects the annular groove and the groove, the release port vertically penetrates the side wall of the groove away from the first structural layer, and a plurality of the exhaust holes, the annular grooves, the transition ports, the grooves and the release ports are connected in sequence to form the airflow channel.

[0015] Optionally, the airflow control component includes a plurality of exhaust pipes, and the plurality of exhaust pipes are arranged in one-to-one correspondence with the plurality of exhaust holes, one end of the exhaust pipe is connected to the exhaust hole, and the other end of the exhaust pipe is connected to the release port, and a gas pressure drop element is provided on the exhaust pipe to control the pressure drop at both ends of the exhaust pipe to a preset value when airflow passes through.

[0016] Optionally, the airflow control assembly includes a plurality of first exhaust pipes and a plurality of second exhaust pipes, at least a portion of the first exhaust pipes and at least a portion of the second exhaust pipes are both wound in the annular groove and the winding directions of the first exhaust pipes and the second exhaust pipes are opposite.

[0017] The utility model also provides a chamber, in which the pump plate assembly used in the chamber as described above is arranged.

[0018] Optionally, the chamber comprises a semiconductor cleaning chamber, and the preset gas comprises residual gas placed in the semiconductor cleaning chamber for surface cleaning.

[0019] The utility model also provides a semiconductor device, wherein the semiconductor device has a gas extraction device and the chamber as described above, wherein the gas extraction device is connected to the gas channel to extract the preset gas flowing through the gas channel.

[0020] As described above, the pump plate assembly of the utility model includes a pump ring provided with an airflow channel and an airflow control assembly arranged in the airflow channel, wherein the airflow control assembly is used to control the consistency of the airflow volume of multiple airflow inlets flowing through the airflow channel, thereby achieving the consistency of the preset gas release in the area surrounded by the pump ring. Furthermore, when the pump plate assembly is applied to a semiconductor cleaning chamber, it can prevent the surface of the wafer placed in the cavity for surface oxide layer etching and cleaning from having a cold spot area with a low etching amount, thereby improving its etching uniformity, thereby improving product yield and process stability. Through the flexible design of the structure of the airflow control assembly, it is possible to achieve flexible adjustment and control of the gas flow released through each exhaust hole based on actual needs, thereby meeting good process adaptability and applicability. The cavity and semiconductor device of the utility model effectively improve process stability, product quality and product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic diagram showing the etching effect on the wafer surface after an oxide layer etching process is performed in a semiconductor cleaning chamber.

[0022] Figure 2 Shown is a schematic diagram of the partial structure of a semiconductor cleaning chamber.

[0023] Figure 3 It is a schematic diagram of the overall structure of the pump ring in the pump plate assembly used in the chamber of the utility model.

[0024] Figure 4 Display as Figure 3 Schematic side view shown in the direction of arrow Ⅰ.

[0025] Figure 5 Display as Figure 3 Schematic side view shown in the direction of arrow Ⅱ.

[0026] Figure 6 Display as Figure 4 Schematic diagram of the cross section at A-A'.

[0027] Figure 7 Display as Figure 4 Schematic diagram of the cross section at B-B'.

[0028] Figure 8 Display as Figure 5 Schematic diagram of the cross section at C-C'.

[0029] Fig. 9 A simplified schematic diagram showing the structure of a pump ring in a pump plate assembly for a chamber according to the present invention.

[0030] Fig.10 It is a simplified schematic diagram of the structure obtained in the first embodiment when the airflow control assembly in the pump plate assembly used in the chamber of the present invention is arranged in the pump ring.

[0031] Fig.11 Shown is a simplified schematic diagram of an airflow control assembly in a pump plate assembly used in a chamber in a first embodiment of the present invention.

[0032] Fig.12 It shows a schematic structural diagram of the pump plate assembly used in the chamber of the utility model when the valve is completely closed.

[0033] Fig.13 It shows a schematic structural diagram of the pump plate assembly used in the chamber of the utility model when the valve part is opened.

[0034] Fig.14 It shows a schematic diagram of the structure of the pump plate assembly used in the chamber of the utility model when the valve is fully opened.

[0035] Fig.15 It is a simplified schematic diagram of the structure obtained in the second embodiment when the airflow control assembly in the pump plate assembly used in the chamber of the present invention is arranged in the pump ring.

[0036] Fig.16 It is a partial cross-sectional schematic diagram showing the exhaust pipe in the pump plate assembly used in the chamber of the present invention being connected between the exhaust hole and the release port.

[0037] Description of Reference Numerals

[0038] 1 Wafer stage

[0039] 2 Wafer

[0040] 10 Pump ring

[0041] 11. First structural layer

[0042] 111 Ring groove

[0043] 112 Exhaust Hole

[0044] 12 Second structural layer

[0045] 121 Groove

[0046] 122 Wafer import and export

[0047] 13 Transition

[0048] 14 Release port

[0049] 20 Airflow control assembly

[0050] 21 Exhaust duct

[0051] 22 Valves

[0052] 221 Adjustment parts

[0053] 222 Seals

[0054] 23 Exhaust pipe

[0055] 24 Gas pressure drop element DETAILED DESCRIPTION

[0056] The following is an explanation of the implementation of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0057] See also Figures 2 to 16It should be noted that the illustrations provided in this embodiment are only used to schematically illustrate the basic concept of the utility model, and the drawings only show the components related to the utility model rather than the number, shape and size of the components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0058] After multiple verifications of the technical problems mentioned in the background technology, it is found that the gas distribution assembly set in the semiconductor cleaning chamber can achieve uniform distribution of etching gas so that the amount of etching gas reaching the surface of the wafer to be etched is consistent, but the reason why the cold spot area of ​​etching amount is still generated is: please refer to Figure 2 , which is a schematic diagram of a partial structure of a semiconductor cleaning chamber, wherein a pump ring 10 surrounding a wafer carrier 1 is arranged in the semiconductor cleaning chamber, and the pump ring 10 includes a wafer inlet and outlet 122 and a release port 14 arranged relatively to each other, wherein the wafer inlet and outlet 122 is used to transfer the wafer 2 on the wafer carrier 1, and the release port 14 is used to cooperate with a plurality of exhaust holes 112 arranged along the circumference of the pump ring 10 (the exhaust holes 112 and the release port 14 are connected inside the pump ring 10) to volatilize the solid by-products of etching in the area surrounded by the pump ring 10 at high temperature and then extract them out of the chamber to avoid adverse effects on the etching process. The gas can still have a certain etching effect on the surface of the wafer 2. Therefore, when the pump ring 10 is used for exhaust, it is necessary to ensure that the residual amount of the etching byproduct gas in the area near the inner wall of the pump ring 10 is consistent to ensure the etching uniformity of the surface of the wafer 2. Taking into account the difference in the extraction force at different distances from the release port 14 (the farther the distance, the lower the extraction force, and the less gas is extracted), the design manufacturer will set the aperture of the exhaust hole 112 at the position opposite to the release port 14 (that is, above the wafer inlet and outlet 122) to be relatively large when designing the pump ring structure, and the aperture of the exhaust hole 112 at other positions is relatively small (that is, equivalent to Figure 4 In d1 is greater than Figure 5 However, after practice, it was found that the wafer 2 flowing out of the semiconductor cleaning chamber corresponds to the position of the wafer inlet and outlet 122 ( Figure 2 However, a cold spot of etching occurs in the area indicated by the dotted line frame, which indicates that the diameter of the exhaust hole 112 opened above the wafer inlet and outlet 122 is designed to be too large, resulting in an unexpected situation in which the machine design and the process do not match.

[0059] Based on the above analysis, the inventors have summarized the following technical solutions to compensate for the problem of wafer surface etching consistency caused by insufficient machine design, thereby improving process stability and product yield.

[0060] Embodiment 1

[0061] This embodiment provides a pump plate assembly for use in a chamber, see 3 to Fig.14 The pump plate assembly includes a pump ring 10 and an airflow control assembly 20 .

[0062] Specifically, see Figure 3 , shown as a schematic diagram of the overall structure of the pump ring, the pump ring 10 is placed in a cavity, the pump ring 10 is provided with an air flow channel for releasing the preset gas in the cavity out of the cavity, the air flow channel has a plurality of air flow inlets opened on one side of the pump ring 10 close to the area surrounded by the pump ring 10 so as to introduce the preset gas into the air flow channel through the plurality of air flow inlets for release; the air flow control component 20 is arranged in the air flow channel, and the air flow control component 20 is connected with the plurality of air flow inlets so as to control the consistency of the gas flow rate released after flowing through each of the flow inlets.

[0063] As an example, the chamber includes a semiconductor cleaning chamber, that is, the pump plate assembly is arranged in the semiconductor cleaning chamber to discharge the residual gas after etching and cleaning the wafer surface oxide layer or other structural layer through the semiconductor cleaning chamber uniformly and circumferentially out of the semiconductor cleaning chamber, that is, the above-mentioned preset gas includes the residual gas of etching and cleaning, for example, gaseous (NH4)2SiF6.

[0064] As an example, see Figures 3 to 5 ,in, Figure 4 and Figure 5 Displayed as Figure 3 In the side view schematic diagram shown in the direction of arrows Ⅰ and Ⅱ, the pump ring 10 includes a first structural layer 11, and the first structural layer 11 is provided with an annular groove 111 and a plurality of exhaust holes 112, wherein the annular groove 111 opens from a side of the first structural layer 11 away from the area surrounded by the pump ring 10 and extends toward a side of the first structural layer 11 close to the area surrounded by the pump ring 10 to partially penetrate the first structural layer 11, the exhaust holes 112 open from the side wall of the annular groove 111 extending in the vertical direction and penetrate the first structural layer 11, and one end of the exhaust hole 112 located on a side of the first structural layer 11 close to the area surrounded by the pump ring 10 constitutes the airflow inlet (that is, the exhaust hole 112 has two openings in its extending direction, and the opening close to the preset gas to be released area serves as the airflow inlet of the entire airflow channel), please refer to Figures 6 to 8 ,in, Figure 6 Display as Figure 4 The cross-sectional diagram at A-A' in the figure is as follows: Figure 7 Display as Figure 4 The cross-sectional diagram at B-B' in the figure is as follows: Figure 8 Display as Figure 5In this embodiment, the annular groove 111 is used to accommodate the preset gas discharged through the plurality of exhaust holes 112, so as to prevent the exhaust holes 112 from being too far away from the final release port 14 to affect the flow conductance of the gas flow, and affect the release rate of the preset gas, thereby affecting the process stability and product yield, wherein the exhaust holes 112 can extend horizontally or obliquely, which is not limited here.

[0065] As an example, the diameters of the multiple exhaust holes 112 are the same, or the diameters of the multiple exhaust holes 112 are different. Based on the setting of the airflow control component 20, the consistency of the flow rate released through each exhaust hole 112 can be guaranteed whether the diameters of the exhaust holes 112 are consistent or inconsistent. Therefore, the diameters of the multiple exhaust holes do not necessarily need to be strictly limited to the diameter of the exhaust holes located at the wafer inlet and outlet positions being larger than the diameter of the exhaust holes located at the exhaust port position as mentioned above. Similarly, the airflow control component of this embodiment can also be directly used in a commonly used pump ring structure without the need to additionally improve the structure of the pump ring (especially the exhaust hole structure).

[0066] As an example, Figure 4 , Figure 6 and Figure 7 As shown, the pump ring 10 also includes a second structural layer 12 located below the first structural layer 11. The second structural layer 12 is provided with a groove 121. The groove 121 is connected to the annular groove 111. The groove 121 serves as a transition space between the internal space of the first structural layer 11 and the final release port 14 to buffer the release of the airflow.

[0067] As an example, the pump ring 10 also includes a transition port 13 and a release port 14, the transition port 13 vertically connects the annular groove 111 and the groove 121, the release port 14 vertically penetrates the side wall of the groove 121 away from the first structural layer 11, and the plurality of exhaust holes 112, the annular groove 111, the transition port 13, the groove 121 and the release port 14 are connected in sequence to form the airflow channel.

[0068] As an example, Figure 5 and Figure 8 As shown, the second structural layer 12 is also provided with a wafer inlet and outlet 122, and the wafer inlet and outlet 122 is arranged opposite to and separately from the groove 121, and the wafer inlet and outlet 122 penetrates the second structural layer 12 in a horizontal direction to communicate with the area surrounded by the pump ring 10, and the wafer inlet and outlet 122 is used to transfer wafers into the chamber.

[0069] For example, see Fig. 9 and Fig.10 ,in, Fig. 9A simplified schematic diagram of the pump ring is shown (where the one-way arrow corresponds to the release port, and the two-way arrow corresponds to the wafer inlet and outlet). Fig.10 The simplified schematic diagram of the structure obtained by setting the airflow control component in the pump ring in this embodiment is shown. The airflow control component 20 is set in the annular groove 111. The airflow control component 20 is provided with a plurality of exhaust passages 21. The plurality of exhaust passages 21 are connected to the plurality of exhaust holes 112 in a one-to-one correspondence. A valve 22 is provided in the exhaust passage 21 to control the gas flow rate flowing into the exhaust passage 21 through the exhaust hole 112. Please refer to Fig.11 , shown is a local simplified schematic diagram of the airflow control component in this embodiment (the structure when the valve is not set). In fact, a structure of the airflow control component 20 is composed of an annular sheet member and a plurality of exhaust channels 21. One end of the exhaust channel 21 passes through the annular sheet member and the other end is connected to the corresponding exhaust hole 112. The annular sheet member is vertically arranged in the annular groove 111, and there is a certain distance between the inner surface of the annular sheet member and the side wall of the annular groove 111 extending in the vertical direction, and there is also a certain distance between the outer surface of the annular sheet member and the side of the first structural component layer 11 away from the area surrounded by the pump ring 10 to facilitate the circulation of the airflow after passing through the exhaust hole 112 and the exhaust channel 21 in sequence. Preferably, the upper and lower surfaces of the annular sheet member abut against the upper and lower side walls of the groove 121 (two opposite side walls extending in the horizontal direction) to prevent the airflow released through the exhaust channel 21 from staying in the space between the annular sheet member and the vertical side wall of the groove 121.

[0070] As an example, the valve includes a butterfly valve or other valves capable of achieving precise and fine control of the flow rate of air flow.

[0071] As an example, the valve 22 includes an adjusting member 221 that can be rotatably arranged to adjust the opening size of the valve 22. Figure 12 to Figure 14 , showing a schematic diagram of the structure when the valve is opened to different degrees, wherein, Fig.12 The diagram shows the structure when the valve is fully closed. Fig.13 The diagram shows the structure when the valve is partially open. Fig.14 The structure diagram of the valve when it is fully opened is shown. The regulating member 221 is preferably made of a material that is resistant to high temperatures, corrosion and has a certain rigidity, such as stainless steel, titanium alloy and the like.

[0072] Furthermore, the valve 22 also includes a sealing member 222 (eg, a sealing rubber ring) disposed on the inner wall of the opening of the valve 22 to enhance the stability and effectiveness of the valve 22 in regulating the size of the airflow.

[0073] The pump plate assembly of the present embodiment includes a pump ring provided with an airflow channel and an airflow control assembly disposed in the airflow channel, wherein the airflow control assembly is used to control the consistency of the airflow volume of multiple airflow inlets flowing through the airflow channel, thereby achieving the consistency of the preset gas release in the area surrounded by the pump ring (equivalent to controlling the residual amount of the preset gas at each position in the area surrounded by the pump ring to be consistent). Furthermore, when the pump plate assembly is applied to a semiconductor cleaning chamber, the surface of the wafer placed in the chamber for surface oxide layer etching and cleaning (especially the surface of the wafer edge area) can no longer have a cold spot area with low etching amount, thereby improving its etching uniformity, thereby improving product yield and process stability. Furthermore, the airflow control assembly of the present embodiment includes an exhaust duct and a valve disposed in the exhaust duct. By adjusting the size of the valve opening, the gas flow released through each exhaust hole can be flexibly adjusted and controlled based on actual needs, meeting good process adaptability and applicability.

[0074] Embodiment 2

[0075] This embodiment provides a pump plate assembly for use in a chamber. The difference between this embodiment and the first embodiment is that the airflow control assemblies of the two are different. Please refer to 15, Fig.16 As shown in some of the drawings mentioned in the first embodiment, the pump plate assembly includes a pump ring 10 and an airflow control assembly 20 .

[0076] For details, please refer to Figure 3 , shown as a schematic diagram of the overall structure of the pump ring, the pump ring 10 is placed in a cavity, the pump ring 10 is provided with an air flow channel for releasing the preset gas in the cavity out of the cavity, the air flow channel has a plurality of air flow inlets opened on one side of the pump ring 10 close to the area surrounded by the pump ring 10 so as to introduce the preset gas into the air flow channel through the plurality of air flow inlets for release; the air flow control component 20 is arranged in the air flow channel, and the air flow control component 20 is connected with the plurality of air flow inlets so as to control the consistency of the gas flow released after flowing through each of the air flow inlets.

[0077] As an example, see Fig.15 , which is a simplified schematic diagram of the structure obtained by setting the airflow control component in the pump ring in this embodiment, the airflow control component 20 includes a plurality of exhaust pipes 23, and the plurality of exhaust pipes 23 are arranged in a one-to-one correspondence with the plurality of exhaust holes 112 (that is, each exhaust pipe is connected to an exhaust hole), one end of the exhaust pipe 23 is connected to the exhaust hole 112, and the other end of the exhaust pipe 23 is connected to the release port 14, and a gas pressure drop element 24 is provided on the exhaust pipe 23 to control the pressure drop at both ends of the exhaust pipe 23 to be a preset value when the airflow passes through, please refer to Fig.16, showing a partial cross-sectional schematic diagram when the exhaust pipe is connected between the exhaust hole and the release port. The exhaust pipe 23 is preferably made of a material that is resistant to high temperature, chemical corrosion, and has a certain elastic deformation ability to meet the winding requirements, such as polypropylene and polytetrafluoroethylene.

[0078] Furthermore, the end of the exhaust pipe 23 away from the exhaust hole 112 can pass through the annular groove 111, the transition port 13 and the groove 121 in sequence and then be directly connected to the release port 14, or the end of the exhaust pipe 23 away from the exhaust hole 112 can also be connected to an intermediate structure arranged in the gas channel (compared with the former, the length of the exhaust pipe can be shortened, thereby reducing the overall load of the pump plate assembly), which is not specifically limited here.

[0079] As an example, the gas pressure drop element 24 includes a pressure reducing valve and a pressure stabilizing valve or other components capable of achieving the gas pressure control function at both ends of the exhaust pipe.

[0080] As an example, Fig.15 and Fig.16 As shown, the airflow control assembly 20 includes a plurality of first exhaust pipes and a plurality of second exhaust pipes, at least a portion of the first exhaust pipes and at least a portion of the second exhaust pipes are both wound in the annular groove 111, and the winding directions of the first exhaust pipes and the second exhaust pipes are opposite. The above-mentioned winding method can minimize the length of each exhaust pipe, which is convenient for controlling the gas pressure drop element set on each exhaust pipe.

[0081] The pump plate assembly of the present embodiment includes a pump ring provided with an airflow channel and an airflow control assembly disposed in the airflow channel, wherein the airflow control assembly is used to control the consistency of the airflow volume of multiple airflow inlets flowing through the airflow channel, thereby achieving consistency of the preset gas release in the area surrounded by the pump ring. Furthermore, the airflow control assembly of the present embodiment includes multiple exhaust pipes and a gas pressure drop element disposed on the exhaust pipes, and the pressure drop of each exhaust pipe is controlled to be a preset value by the gas pressure drop element to control the suction force applied to each exhaust hole to be consistent. By adjusting the preset value, the gas flow released through each exhaust hole can also be flexibly adjusted and controlled based on actual needs, meeting better process adaptability and applicability.

[0082] Embodiment 3

[0083] The utility model also provides a chamber, which can be combined with Figure 2 , the chamber is provided with a pump plate assembly as described above for use in the chamber.

[0084] As an example, the chamber includes a semiconductor cleaning chamber, and the preset gas includes residual gas placed in the semiconductor cleaning chamber for surface cleaning.

[0085] The chamber of the present embodiment is provided with the above-mentioned pump plate assembly inside. Compared with the existing chamber, the process stability, product quality and product yield of the process performed in the chamber are effectively improved.

[0086] Embodiment 4

[0087] The utility model also provides a semiconductor device, wherein the semiconductor device has a gas extraction device and the chamber as described above, wherein the gas extraction device is connected to the gas channel to extract the preset gas flowing through the gas channel.

[0088] The semiconductor device of the present embodiment is provided with the above-mentioned chamber. Compared with the conventional semiconductor device, the process stability, product quality and product yield of the process performed in the semiconductor device are effectively improved.

[0089] In summary, the pump plate assembly of the utility model includes a pump ring provided with an airflow channel and an airflow control assembly arranged in the airflow channel, wherein the airflow control assembly is used to control the consistency of the airflow volume of multiple airflow inlets flowing through the airflow channel, thereby achieving the consistency of the preset gas release in the area surrounded by the pump ring. Furthermore, when the pump plate assembly is applied to a semiconductor cleaning chamber, the surface of the wafer placed in the cavity for surface oxide layer etching and cleaning can no longer have a cold spot area with low etching amount, thereby improving its etching uniformity, thereby improving product yield and process stability. Through the flexible design of the airflow control assembly structure, it is possible to achieve flexible adjustment and control of the gas flow released through each exhaust hole based on actual needs, meeting good process adaptability and applicability. The cavity and semiconductor device of the utility model effectively improve process stability, product quality and product yield. Therefore, the utility model effectively overcomes the various shortcomings in the prior art and has a high industrial utilization value.

[0090] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed in the present invention shall still be covered by the claims of the present invention.

Claims

1. A pump plate assembly for use in a chamber, characterized in that include: A pump ring is placed in a cavity, the pump ring is provided with an airflow channel for releasing the preset gas in the cavity out of the cavity, the airflow channel has a plurality of airflow inlets opened on one side of the pump ring close to the area surrounded by the pump ring so as to introduce the preset gas into the airflow channel through the plurality of airflow inlets for release; The airflow control component is arranged in the airflow channel, and the airflow control component is connected with the plurality of airflow inlets to control the consistency of the flow rate of the gas released after passing through each of the airflow inlets.

2. The pump plate assembly for use in a chamber according to claim 1, characterized in that: The pump ring includes a first structural layer, which is provided with an annular groove and a plurality of exhaust holes, wherein the annular groove opens from a side of the first structural layer away from the area surrounded by the pump ring and extends toward a side of the first structural layer close to the area surrounded by the pump ring to partially penetrate the first structural layer, and the exhaust holes open from the side walls of the annular groove extending in the vertical direction and penetrate the first structural layer, and one end of the exhaust holes located on a side of the first structural layer close to the area surrounded by the pump ring constitutes the airflow inlet.

3. The pump plate assembly for use in a chamber according to claim 2, characterized in that: The airflow control component is arranged in the annular groove, and the airflow control component is provided with a plurality of exhaust passages, and the plurality of exhaust passages are connected with the plurality of exhaust holes in a one-to-one correspondence, and a valve is arranged in the exhaust passage to control the gas flow flowing into the exhaust passage through the exhaust holes.

4. The pump plate assembly for use in a chamber according to claim 3, characterized in that: The valve comprises an adjusting member which is rotatably arranged to adjust the size of the valve opening.

5. The pump plate assembly for use in a chamber according to claim 2, characterized in that: The pump ring further comprises a second structural layer located below the first structural layer, the second structural layer is provided with a groove, and the groove is communicated with the annular groove.

6. The pump plate assembly for use in a chamber according to claim 5, characterized in that: The pump ring also includes a transition port and a release port, wherein the transition port vertically connects the annular groove and the groove, and the release port vertically penetrates the side wall of the groove away from the first structural layer, and a plurality of the exhaust holes, the annular groove, the transition port, the groove and the release port are sequentially connected to form the airflow channel.

7. The pump plate assembly for use in a chamber according to claim 6, characterized in that: The airflow control component includes a plurality of exhaust pipes, and the plurality of exhaust pipes are arranged in one-to-one correspondence with the plurality of exhaust holes. One end of the exhaust pipe is connected to the exhaust hole, and the other end of the exhaust pipe is connected to the release port. A gas pressure drop element is provided on the exhaust pipe to control the pressure drop at both ends of the exhaust pipe to a preset value when airflow passes through.

8. The pump plate assembly for use in a chamber according to claim 7, characterized in that: The airflow control assembly includes a plurality of first exhaust pipes and a plurality of second exhaust pipes. At least a portion of the first exhaust pipes and at least a portion of the second exhaust pipes are both wound in the annular groove, and the winding directions of the first exhaust pipes and the second exhaust pipes are opposite.

9. A chamber, characterized in that: The chamber is provided with a pump plate assembly for use in the chamber as described in any one of claims 1 to 8.

10. The chamber according to claim 9, characterized in that: The chamber comprises a semiconductor cleaning chamber, and the preset gas comprises residual gas placed in the semiconductor cleaning chamber for surface cleaning.

11. A semiconductor device, characterized in that: The semiconductor device comprises a gas extraction device and a chamber as described in any one of claims 9 to 10, wherein the gas extraction device is connected to the gas channel to extract the preset gas flowing through the gas channel.

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