High-temperature protection device and audio equipment

Abstract

The utility model discloses a high-temperature protection device and audio equipment, and relates to the technical field of audio equipment protection, and the high-temperature protection device comprises a high-temperature detection module and a high-temperature protection module. The high-temperature protection module is respectively connected with the high-temperature detection module and a power amplifier of target equipment; and the high-temperature detection module is used for controlling each internal switch tube to be switched on under the condition that the temperature of the target equipment is greater than or equal to a preset temperature threshold value so as to trigger the high-temperature protection module to control a power amplifier of the target equipment to stop working. The utility model aims to prevent the service life of the audio equipment from being influenced due to over-high working temperature, so as to prolong the service life of the audio equipment.

Description

Technical Field

[0001] The utility model relates to the technical field of audio equipment protection, in particular to a high temperature protection device and an audio equipment. Background Art

[0002] At present, when audio devices such as Bluetooth speakers and wireless speakers are working, a large amount of heat is generated inside them, which will cause the operating temperature of the audio devices to become higher and higher. Excessively high operating temperature can easily cause audio equipment failure, thereby affecting the service life of the audio equipment. Utility Model Content

[0003] The main purpose of the utility model is to provide a high temperature protection device, which aims to prevent the service life of the audio device from being affected by the excessively high working temperature, so as to extend the service life of the audio device.

[0004] To achieve the above object, the utility model provides a high temperature protection device, which includes a high temperature detection module and a high temperature protection module;

[0005] The high temperature protection module is respectively connected to the high temperature detection module and the power amplifier of the target device;

[0006] The high temperature detection module is used to control each internal switch tube to conduct when the temperature of the target device is greater than or equal to a preset temperature threshold, so as to trigger the high temperature protection module to control the power amplifier of the target device to stop working.

[0007] In one embodiment, the high temperature detection module includes a high temperature detection unit and a high temperature trigger unit;

[0008] The first output end of the high temperature detection unit is connected to the first input end of the high temperature protection module, the second output end of the high temperature detection unit is connected to the input end of the high temperature trigger unit, and the output end of the high temperature trigger unit is connected to the second input end of the high temperature protection module;

[0009] The high temperature detection unit is used to control the internal switch tube to be turned on when the temperature of the target device is greater than or equal to a preset temperature threshold, so as to output a switch tube turn-on signal to the high temperature trigger unit;

[0010] The high temperature trigger unit is used to control the internal switch tube to be turned on according to the received switch tube conduction signal, so as to trigger the high temperature protection module to control the power amplifier of the target device to stop working.

[0011] In one embodiment, the high temperature trigger unit includes a high temperature detection subunit and a temperature threshold adjustment subunit;

[0012] The high temperature detection subunit is connected to the temperature threshold adjustment subunit, the first output end of the high temperature detection subunit is connected to the first input end of the high temperature protection module, and the second output end of the high temperature detection subunit is connected to the input end of the high temperature trigger unit;

[0013] The temperature threshold adjustment subunit is used to adjust the value of the preset temperature threshold.

[0014] In one embodiment, the high temperature detection subunit includes a first diode, a second diode, a first switch tube, a first resistor and a second resistor;

[0015] The anode of the first diode is connected to the power supply, the cathode of the first diode is connected to the anode of the second diode and the first input end of the high temperature protection module, the cathode of the second diode is connected to the emitter of the first switching tube, the emitter of the first switching tube is connected to the first end of the temperature threshold adjustment subunit, the base of the first switching tube is connected to the second end of the temperature threshold adjustment subunit and the first end of the first resistor, the collector of the first switching tube is connected to the input end of the high temperature trigger unit, the second end of the first resistor is connected to the first end of the second resistor, and the second end of the second resistor is grounded.

[0016] In one embodiment, the first switch tube is a PNP transistor.

[0017] In one embodiment, the temperature threshold adjustment subunit includes a voltage dividing resistor;

[0018] The first end of the voltage-dividing resistor is connected to the emitter of the first switching tube, and the second end of the voltage-dividing resistor is connected to the base of the first switching tube.

[0019] In one embodiment, the high temperature trigger unit includes a second switch tube, a third resistor, a fourth resistor and a fifth resistor;

[0020] The first end of the third resistor is connected to the second output end of the high temperature detection unit, the second end of the third resistor is connected to the base of the second switch tube, the base of the second switch tube is connected to the first end of the fourth resistor, the emitter of the second switch tube is connected to the first end of the fifth resistor, the second end of the fifth resistor is connected to the second input end of the high temperature protection module, and the second end of the fourth resistor and the collector of the second switch tube are grounded.

[0021] In one embodiment, the second switch tube is an NPN transistor.

[0022] In one embodiment, the high temperature protection module includes a third switch tube, a sixth resistor, a seventh resistor and a capacitor;

[0023] The emitter of the third switch tube is connected to the first end of the sixth resistor and the first output end of the high temperature detection module, the base of the third switch tube is connected to the second end of the sixth resistor and the second output end of the high temperature detection module, the collector of the third switch tube is connected to the first end of the capacitor, the first end of the capacitor is connected to the first end of the seventh resistor, the first end of the seventh resistor is connected to the power amplifier of the target device, and the second end of the capacitor and the second end of the seventh resistor are grounded.

[0024] In addition, to achieve the above-mentioned purpose, the utility model also provides an audio device, including a power amplifier and the above-mentioned high-temperature protection device; the power amplifier is connected to the high-temperature protection device.

[0025] The utility model provides a high-temperature protection device, which includes a high-temperature detection module and a high-temperature protection module, wherein the high-temperature protection module is respectively connected to the high-temperature detection module and a power amplifier of a target device; the high-temperature detection module is used to control each internal switch tube to conduct when the temperature of the target device is greater than or equal to a preset temperature threshold, so as to trigger the high-temperature protection module to control the power amplifier of the target device to stop working.

[0026] Therefore, the high temperature protection device provided by the utility model can control the power amplifier of the target device to stop working when the temperature of the target device is too high, so that the power amplifier of the target device no longer amplifies the audio signal and no longer drives the speaker to make sound, thereby achieving effective suppression of heat generation of the audio device, avoiding the service life of the audio device being affected by the excessively high operating temperature, and extending the service life of the audio device. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0028] Figure 1 This is a schematic diagram of the module structure of the first embodiment of the high temperature protection device of the utility model;

[0029] Figure 2 This is a schematic diagram of the module structure of the second embodiment of the high temperature protection device of the utility model;

[0030] Figure 3 This is a schematic diagram of the module structure of the third embodiment of the high temperature protection device of the utility model;

[0031] Figure 4 This is a schematic diagram of the circuit structure of an example of the high temperature protection device of the utility model;

[0032] Figure 5 A schematic diagram showing the relationship between the on-state voltage and current of a diode provided in an embodiment of the utility model at different temperatures;

[0033] Figure 6 A schematic diagram of the relationship between the on-state voltage and current of a transistor provided in an embodiment of the utility model at different temperatures.

[0034] The purpose, features and advantages of the present invention will be further described in conjunction with the embodiments and with reference to the accompanying drawings.

[0035] Description of Figure Numbers:

[0036] 10. High temperature detection module; 20. High temperature protection module; 11. High temperature detection unit; 12. High temperature trigger unit; 111. High temperature detection subunit; 112. Temperature threshold adjustment subunit; 100. Power amplifier; R1~R7, resistors; Q1~Q3, switches; D1~D2, diodes; Re1, voltage divider resistor; C1, capacitor; SYS_5V, power supply. DETAILED DESCRIPTION

[0037] It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0038] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0039] It should be noted that the descriptions of "first", "second", etc. in the present utility model are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present utility model.

[0040] At present, when audio devices such as Bluetooth speakers and wireless speakers are working, a large amount of heat is generated inside them, which will cause the operating temperature of the audio devices to become higher and higher. Excessively high operating temperature can easily cause audio equipment failure, thereby affecting the service life of the audio equipment.

[0041] Based on this, the utility model provides a high temperature protection device. In the first embodiment of the utility model, please refer to Figure 1 The high temperature protection device includes a high temperature detection module 10 and a high temperature protection module 20; the output end of the high temperature detection module 10 is connected to the input end of the high temperature protection module 20, and the output end of the high temperature protection module 20 is connected to the mute pin of the power amplifier 100 of the target device; the high temperature detection module 10 is used to control the internal switch tubes to conduct when the temperature of the target device is greater than or equal to a preset temperature threshold, so as to trigger the high temperature protection module 20 to control the power amplifier 100 of the target device to stop working.

[0042] It should be noted that the target device may be an audio device, and the switch tube inside the high temperature detection module 10 may be a triode, a MOS tube, a MOSFET, an IGBT, a SiC, etc., which is not specifically limited in this embodiment. The preset temperature threshold is a reference value for determining whether the temperature of the target device is too high. The preset temperature threshold may be a default value or a value flexibly set by the user according to the actual use of the target device, which is not specifically limited in this embodiment.

[0043] It can be understood that after all the switch tubes inside the high temperature detection module 10 are turned on, the signal output by the high temperature protection module 20 to the mute pin of the power amplifier 100 of the target device will be a high-level signal, thereby enabling the mute pin to control the power amplifier 100 of the target device to stop working; and when all the switch tubes inside the high temperature detection module 10 are not turned on, the signal output by the high temperature protection module 20 to the mute pin of the power amplifier 100 of the target device will be a low-level signal, thereby failing to enable the mute pin, and thus failing to control the power amplifier 100 of the target device to stop working.

[0044] The high temperature protection device provided in this embodiment can control the power amplifier 100 of the target device to stop working when the temperature of the target device is too high, so that the power amplifier 100 of the target device no longer amplifies the audio signal and no longer drives the speaker to produce sound, thereby effectively suppressing the heat generation of the audio device, avoiding the service life of the audio device being affected by the excessively high operating temperature, and extending the service life of the audio device.

[0045] Based on the above first embodiment, a second embodiment of the high temperature protection device of the utility model is proposed. In the second embodiment of the utility model, please refer to Figure 2 The high temperature detection module 10 may include a high temperature detection unit 11 and a high temperature trigger unit 12; the first output end of the high temperature detection unit 11 is connected to the first input end of the high temperature protection module 20, the second output end of the high temperature detection unit 11 is connected to the input end of the high temperature trigger unit 12, and the output end of the high temperature trigger unit 12 is connected to the second input end of the high temperature protection module 20; the high temperature detection unit 11 is used to control the internal switch tube to be turned on when the temperature of the target device is greater than or equal to a preset temperature threshold, so as to output a switch tube turn-on signal to the high temperature trigger unit 12; the high temperature trigger unit 12 is used to control the internal switch tube to be turned on according to the received switch tube turn-on signal, so as to trigger the high temperature protection module 20 to control the power amplifier 100 of the target device to stop working.

[0046] This embodiment sets the high temperature detection module 10 to include a high temperature detection unit 11 and a high temperature trigger unit 12, and controls the high temperature detection unit 11 and the high temperature trigger unit 12 to perform different operations respectively, so that when the temperature of the target device is greater than or equal to the preset temperature threshold, it can ensure that all the switch tubes inside the high temperature detection module 10 are turned on, thereby ensuring that the high temperature protection module 20 can be successfully triggered to control the power amplifier 100 of the target device to stop working. Therefore, this embodiment avoids the service life of the audio device being affected by the excessively high operating temperature by ensuring the normal operation of the high temperature protection device, thereby extending the service life of the audio device.

[0047] Based on the above second embodiment, a third embodiment of the high temperature protection device of the utility model is proposed. In the third embodiment of the utility model, please refer to Figure 3 The high temperature detection unit 11 may include a high temperature detection subunit 111 and a temperature threshold adjustment subunit 112; the high temperature detection subunit 111 is connected to the temperature threshold adjustment subunit 112, the first output end of the high temperature detection subunit 111 is connected to the first input end of the high temperature protection module 20, and the second output end of the high temperature detection subunit 111 is connected to the input end of the high temperature trigger unit 12; the temperature threshold adjustment subunit 112 is used to adjust the size of the preset temperature threshold.

[0048] It is understandable that the high temperature levels of different devices are different, that is, the sizes of the preset temperature thresholds of different devices are different. Therefore, this embodiment sets a temperature threshold adjustment subunit 112 that can adjust the size of the preset temperature threshold so that the high temperature protection device can meet the high temperature protection requirements of devices with different high temperature levels.

[0049] For example, please refer to Figure 4, the high temperature detection subunit 111, the temperature threshold adjustment subunit 112, the high temperature trigger unit 12 and the high temperature protection module 20 mentioned in the above embodiments can be set according to actual conditions. For example, the high temperature detection subunit 111 may include a first diode D1, a second diode D2, a first switch tube Q1, a first resistor R1 and a second resistor R2, the temperature threshold adjustment subunit 112 may include a voltage divider resistor Re1, the high temperature trigger unit 12 may include a second switch tube Q2, a third resistor R3, a fourth resistor R4 and a fifth resistor R5, and the high temperature protection module 20 may include a third switch tube Q3, a sixth resistor R6, a seventh resistor R7 and a capacitor C1;

[0050] The anode of the first diode D1 is connected to the power supply SYS_5V, the cathode of the first diode D1 is connected to the anode of the second diode D2 and the emitter of the third switch tube Q3, the cathode of the second diode D2 is connected to the emitter of the first switch tube Q1, the emitter of the first switch tube Q1 is connected to the first end of the voltage-dividing resistor Re1, the base of the first switch tube Q1 is connected to the second end of the voltage-dividing resistor Re1 and the first end of the first resistor R1, the collector of the first switch tube Q1 is connected to the first end of the third resistor R3, the second end of the first resistor R1 is connected to the first end of the second resistor R2 and the POWER_ON end of the MCU, and the second end of the second resistor R2 is grounded;

[0051] The second end of the third resistor R3 is connected to the base of the second switch tube Q2, the base of the second switch tube Q2 is connected to the first end of the fourth resistor R4, the emitter of the second switch tube Q2 is connected to the first end of the fifth resistor R5, the second end of the fifth resistor R5 is connected to the base of the third switch tube Q3, and the second end of the fourth resistor R4 and the collector of the second switch tube Q2 are grounded;

[0052] The emitter of the third switch tube Q3 is connected to the first end of the sixth resistor R6, the base of the third switch tube Q3 is connected to the second end of the sixth resistor R6, the collector of the third switch tube Q3 is connected to the first end of the capacitor C1, the first end of the capacitor C1 is connected to the first end of the seventh resistor R7, and the first end of the seventh resistor R7 is connected to the mute pin (corresponding to the mute pin) of the power amplifier 100 of the target device. Figure 4 A second end of the capacitor C1 and a second end of the seventh resistor R7 are grounded.

[0053] It should be noted that, in this example, the first switch tube Q1 and the third switch tube Q3 are both PNP-type triodes, and the second switch tube Q2 is an NPN-type triode.

[0054] Further, in order to more clearly understand the working principle of the high temperature protection device of the utility model, Figure 4 Taking the high temperature protection device shown, the preset temperature threshold is 100°C as an example, specifically;

[0055] If the target device temperature is 25°C, then refer to Figure 5 It can be seen that the conduction voltage Vf of the diode at 25°C is 0.4V, so the emitter voltage Ve of the first switch tube Q1 can be determined to be SYS_5V-2*(D1, D2)=4.2V, and then the voltage between the base and the emitter of the first switch tube Q1 can be determined to be Vbe=(Ve-Vpower_on)*Re1 / (Re1+R1)=0.39V. Figure 6 It can be seen that the on-state voltage Vbe of the transistor at 25°C is 0.65V, so the first switch tube Q1 will not be turned on, and the second switch tube Q2 and the third switch tube Q3 will not be turned on either. At this time, the signal output by the high temperature protection module 20 to the mute pin of the power amplifier 100 of the target device is a low level signal.

[0056] If the target device temperature is 100°C, then refer to Figure 5 It can be seen that the conduction voltage Vf of the diode at 100°C is 0.2V, so the emitter voltage Ve of the first switch tube Q1 can be determined to be SYS_5V-2*(D1, D2)=4.6V, and then the voltage between the base and the emitter of the first switch tube Q1 can be determined to be Vbe=(Ve-Vpower_on)*Re1 / (Re1+R1)=0.56V. Figure 6 It can be seen that the on-state voltage Vbe of the transistor at 100°C is 0.55V, thus, the first switch tube Q1 will be turned on, and the second switch tube Q2 and the third switch tube Q3 will also be turned on. At this time, the signal output by the high temperature protection module 20 to the mute pin of the power amplifier 100 of the target device is a high level signal.

[0057] The above examples are only used to assist in understanding the present invention and do not constitute a limitation on the high temperature protection device of the present invention. Simple changes in more forms based on this technical concept are all within the protection scope of the present invention.

[0058] The utility model also provides an audio device, which includes a power amplifier and a high temperature protection device, wherein the output end of the high temperature protection device is connected to the mute pin of the power amplifier, and the structure of the high temperature protection device can refer to the above embodiment, which will not be described in detail here. As a matter of course, since the audio device of this embodiment includes all the technical solutions of all the embodiments of the high temperature protection device, and the technical effects achieved are also exactly the same, they will not be described in detail here.

[0059] The above are only preferred embodiments of the present invention, and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the specification and drawings of the present invention, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A high temperature protection device, characterized in that: The high temperature protection device comprises a high temperature detection module and a high temperature protection module; The high temperature protection module is respectively connected to the high temperature detection module and the power amplifier of the target device; The high temperature detection module is used to control each internal switch tube to conduct when the temperature of the target device is greater than or equal to a preset temperature threshold, so as to trigger the high temperature protection module to control the power amplifier of the target device to stop working.

2. The high temperature protection device according to claim 1, characterized in that: The high temperature detection module includes a high temperature detection unit and a high temperature trigger unit; The first output end of the high temperature detection unit is connected to the first input end of the high temperature protection module, the second output end of the high temperature detection unit is connected to the input end of the high temperature trigger unit, and the output end of the high temperature trigger unit is connected to the second input end of the high temperature protection module; The high temperature detection unit is used to control the internal switch tube to be turned on when the temperature of the target device is greater than or equal to a preset temperature threshold, so as to output a switch tube turn-on signal to the high temperature trigger unit; The high temperature trigger unit is used to control the internal switch tube to be turned on according to the received switch tube conduction signal, so as to trigger the high temperature protection module to control the power amplifier of the target device to stop working.

3. The high temperature protection device according to claim 2, characterized in that: The high temperature trigger unit includes a high temperature detection subunit and a temperature threshold adjustment subunit; The high temperature detection subunit is connected to the temperature threshold adjustment subunit, the first output end of the high temperature detection subunit is connected to the first input end of the high temperature protection module, and the second output end of the high temperature detection subunit is connected to the input end of the high temperature trigger unit; The temperature threshold adjustment subunit is used to adjust the value of the preset temperature threshold.

4. The high temperature protection device according to claim 3, characterized in that: The high temperature detection subunit includes a first diode, a second diode, a first switch tube, a first resistor and a second resistor; The anode of the first diode is connected to the power supply, the cathode of the first diode is connected to the anode of the second diode and the first input end of the high temperature protection module, the cathode of the second diode is connected to the emitter of the first switching tube, the emitter of the first switching tube is connected to the first end of the temperature threshold adjustment subunit, the base of the first switching tube is connected to the second end of the temperature threshold adjustment subunit and the first end of the first resistor, the collector of the first switching tube is connected to the input end of the high temperature trigger unit, the second end of the first resistor is connected to the first end of the second resistor, and the second end of the second resistor is grounded.

5. The high temperature protection device according to claim 4, characterized in that: The first switch tube is a PNP type transistor.

6. The high temperature protection device according to claim 4, characterized in that: The temperature threshold adjustment subunit includes a voltage dividing resistor; The first end of the voltage-dividing resistor is connected to the emitter of the first switching tube, and the second end of the voltage-dividing resistor is connected to the base of the first switching tube.

7. The high temperature protection device according to claim 2, characterized in that: The high temperature trigger unit includes a second switch tube, a third resistor, a fourth resistor and a fifth resistor; The first end of the third resistor is connected to the second output end of the high temperature detection unit, the second end of the third resistor is connected to the base of the second switch tube, the base of the second switch tube is connected to the first end of the fourth resistor, the emitter of the second switch tube is connected to the first end of the fifth resistor, the second end of the fifth resistor is connected to the second input end of the high temperature protection module, and the second end of the fourth resistor and the collector of the second switch tube are grounded.

8. The high temperature protection device according to claim 7, characterized in that: The second switch tube is an NPN transistor.

9. The high temperature protection device according to any one of claims 1 to 8, characterized in that: The high temperature protection module includes a third switch tube, a sixth resistor, a seventh resistor and a capacitor; The emitter of the third switch tube is connected to the first end of the sixth resistor and the first output end of the high temperature detection module, the base of the third switch tube is connected to the second end of the sixth resistor and the second output end of the high temperature detection module, the collector of the third switch tube is connected to the first end of the capacitor, the first end of the capacitor is connected to the first end of the seventh resistor, the first end of the seventh resistor is connected to the power amplifier of the target device, and the second end of the capacitor and the second end of the seventh resistor are grounded.

10. An audio device, characterized in that: The audio device comprises a power amplifier and a high temperature protection device as claimed in any one of claims 1 to 9; the power amplifier is connected to the high temperature protection device.

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