LED light-emitting chip

By designing the structure of multiple luminous regions in the LED light emitting chip, the problem of low photoelectric conversion efficiency of existing LED chips is solved, and higher energy efficiency and longer service life are achieved.

CN222639007UActive Publication Date: 2025-03-18NARVELLUX TECH (SHENZHEN) CO LTD
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Patent Information

Application Number
CN202421210423.1
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-05-29
Publication Date
2025-03-18
Estimated Expiration
2034-05-29

AI Technical Summary

Technical Problem

The photoelectric conversion efficiency of existing LED light-emitting chips is low, resulting in high energy consumption and cannot meet the increasingly stringent energy consumption standards.

Method used

An LED light emitting chip including an epitaxial layer, a first electrode and a second electrode is designed, and the epitaxial layer has a plurality of light emitting regions, and the current expansion capability is increased and the working voltage is reduced by providing a plurality of light emitting regions.

Benefits of technology

It effectively improves the photoelectric conversion efficiency of LED light-emitting chips, reduces the energy consumption of the entire machine, extends the battery life, and improves the heat dissipation ability and reliability.

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Abstract

The utility model provides an LED light-emitting chip. The LED light-emitting chip comprises an epitaxial layer. Wherein the epitaxial layer comprises a first semiconductor layer, an active light-emitting layer and a second semiconductor layer which are stacked; the epitaxial layer has a plurality of light emitting regions. The LED light-emitting chip has ultra-low voltage, so that the photoelectric conversion efficiency of the LED light-emitting chip is effectively improved, the energy consumption of the whole machine is effectively reduced, and the battery life is prolonged.
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