Single crystal furnace with adjustable thermal field height

Abstract

The utility model provides a single crystal furnace with an adjustable thermal field height, and relates to the technical field of single crystal furnaces. The guide cylinder is arranged in the main furnace chamber; the water cooling screen is arranged in the guide cylinder and can ascend and descend; the crucible is arranged below the guide cylinder and the water cooling screen; the crucible can be lifted to a seeding pot position; the thermal field assembly is arranged in the main furnace chamber; the lower part of the guide cylinder and the crucible are positioned in the thermal field assembly; the guide cylinder is mounted in the thermal field assembly; the lifting mechanism is connected with the bottom of the thermal field assembly; the lifting mechanism is used for integrally lifting the thermal field assembly so as to adjust the relative position between the thermal field height and the seeding pot position. The thermal field assembly is integrally lifted through the lifting mechanism, lifting adjustment of the height of the thermal field is achieved, the height of the thermal field is accurately positioned, the actual thermal field height and the design height of each furnace are kept consistent, and therefore it is guaranteed that after the water-cooling screen descends to the same designated position, the vertical distance between the silicon liquid level and the water-cooling screen is kept consistent; and the crystal pulling stability is kept.

Description

Technical Field

[0001] The utility model relates to the technical field of single crystal furnaces, in particular to a single crystal furnace with adjustable thermal field height. Background Art

[0002] At present, the thermal field height (the height of the top of the thermal field) of the single crystal furnace (produced by the direct pulling method) is fixed. After the furnace is reopened and the hot field is installed, there will be a certain deviation in the thermal field height, resulting in the water-cooling screen being lowered to the same position. The actual vertical distance between the silicon liquid level and the water-cooling screen does not meet the requirements (deviation occurs), that is, the consistency of the actual vertical distance between the silicon liquid level and the water-cooling screen becomes poor, which has an adverse effect on crystallization and single crystal quality.

[0003] There is no precise control method for the consistency of thermal field height in the industry. When the thermal field height deviates, the operator needs to adjust the actual position of the silicone liquid level to keep the vertical distance from the liquid level to the water cooling screen consistent. However, this method is heavily dependent on the quality of the operator and has poor controllability. Utility Model Content

[0004] In view of the above situation, the utility model provides a single crystal furnace with adjustable thermal field height, aiming to solve the current technical problem that when the thermal field height deviates, the operator needs to adjust the actual position of the silicon liquid level to keep the vertical distance from the liquid level to the water cooling screen consistent. This method seriously relies on the quality of the operator and has poor controllability.

[0005] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0006] The utility model provides a single crystal furnace with adjustable thermal field height, comprising:

[0007] Main furnace room;

[0008] A guide tube is arranged in the main furnace chamber;

[0009] The water-cooling screen is arranged in the guide tube and can be raised and lowered;

[0010] The crucible is arranged below the guide tube and the water cooling screen; the crucible can be raised and lowered to the seeding pot position;

[0011] A thermal field assembly is arranged in the main furnace chamber; the lower part of the guide tube and the crucible are located in the thermal field assembly, and the guide tube is installed on the thermal field assembly;

[0012] A lifting mechanism connected to the bottom of the thermal field assembly;

[0013] Among them, the lifting mechanism is used to lift the thermal field assembly as a whole to adjust the relative position between the thermal field height and the seeding pot position; the thermal field height refers to the vertical distance between the top of the thermal field assembly and the bottom of the main furnace chamber.

[0014] In some embodiments of the present invention, a scale or mark indicating the design height of the thermal field is provided on the inner wall of the main furnace chamber.

[0015] In some embodiments of the present invention, the lifting mechanism includes a cylinder.

[0016] In some embodiments of the present invention, the lifting mechanism includes a cylinder.

[0017] In some embodiments of the utility model, the lifting mechanism includes a lifting rod and a lifting motor; the lifting rod moves through the bottom of the main furnace chamber, one end of the lifting rod is connected to the thermal field component, and the other end is transmission-connected to the output end of the lifting motor.

[0018] In some embodiments of the present invention, the upper portion of the guide tube is installed on the top of the thermal field assembly.

[0019] In some embodiments of the present invention, the thermal field assembly includes a heating element and a top insulation element, an upper insulation element, a middle insulation element, a lower insulation element and a bottom insulation element arranged in sequence from top to bottom; the heating element is arranged between the thermal field assembly and the crucible.

[0020] In some embodiments of the present invention, the heating element is arranged between the middle heat-insulating element and the crucible.

[0021] The embodiments of the present invention have at least the following advantages or beneficial effects:

[0022] After the furnace is reopened and installed, the thermal field components are lifted as a whole through the lifting mechanism to achieve the adjustable height of the thermal field, and the thermal field height is accurately positioned to keep the actual thermal field height of each furnace consistent with the designed height, thereby ensuring that after the water-cooling screen descends to the same designated position, the vertical distance between the silicon liquid level and the water-cooling screen remains consistent, so as to maintain the stability of crystal pulling (seedling is a step in crystal pulling).

[0023] Other features and advantages of the present invention will be set forth in the following description, and in part will become apparent from the description, or may be understood by practicing the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0025] Figure 1 Schematic diagram of the structure of a single crystal furnace with adjustable thermal field height.

[0026] Icons: 1-main furnace chamber, 2-guide tube, 3-water cooling screen, 4-crucible, 51-top insulation part, 52-upper insulation part, 53-middle insulation part, 54-lower insulation part, 55-bottom insulation part, 56-heating part, 6-lifting mechanism, 61-lifting rod, 62-lifting motor, 7-silicon liquid level. DETAILED DESCRIPTION

[0027] In the following, only some exemplary embodiments are briefly described. As those skilled in the art can appreciate, the described embodiments can be modified in various different ways without departing from the spirit or scope of the embodiments of the present invention.

[0028] In the description of the embodiments of the present invention, it should be understood that the terms "upper", "lower", "top", "bottom", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present invention.

[0029] In the embodiments of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral body; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.

[0030] The embodiments of the present utility model are described in detail below with reference to the accompanying drawings.

[0031] See also Figure 1 This embodiment provides a single crystal furnace with adjustable thermal field height, including a main furnace chamber 1, a guide tube 2, a water-cooled shield 3, a crucible 4, a thermal field component and a lifting mechanism 6.

[0032] The draft tube 2 is arranged in the main furnace chamber 1 .

[0033] The water-cooling shield 3 is disposed in the guide tube 2 and can be raised and lowered.

[0034] The crucible 4 is arranged below the guide tube 2 and the water cooling screen 3; the crucible 4 is used to contain silicon liquid; the crucible 4 can be raised and lowered relative to the thermal field assembly, and when the crucible 4 is in the seeding pot position, the seeding operation can be performed.

[0035] The thermal field assembly is used to set up a thermal field outside the crucible 4; the thermal field assembly is arranged in the main furnace chamber 1, the lower part of the guide tube 2 and the crucible 4 are located in the thermal field assembly, and the upper part of the guide tube 2 is installed on the top of the thermal field assembly; the thermal field assembly includes a heating element 56 and a top insulation element 51, an upper insulation element 52, a middle insulation element 53, a lower insulation element 54 and a bottom insulation element 55 arranged in sequence from top to bottom; the heating element 56 is arranged between the thermal field assembly and the crucible 4. Figure 1 As shown, the heat field height refers to the vertical distance h between the upper surface of the top heat-insulating member 51 and the furnace bottom of the main furnace chamber 1 .

[0036] The lifting mechanism 6 is connected to the bottom of the thermal field assembly (bottom insulation member 55 ), and is used to lift the thermal field assembly as a whole to adjust the relative position between the thermal field height and the seeding pot position of the crucible 4 .

[0037] The lifting mechanism 6 can use a cylinder, an oil cylinder or a motor as a power source; preferably, in this embodiment, the lifting mechanism 6 includes a lifting rod 61 and a lifting motor 62, the lifting rod 61 moves through the bottom of the main furnace chamber 1, one end of the lifting rod 61 is connected to the bottom of the thermal field assembly, and the other end is transmission-connected to the output end of the lifting motor 62, and the lifting motor 62 can drive the lifting rod 61 to move up or down.

[0038] After the furnace is reopened and installed, the lifting mechanism 6 is used to lift the thermal field assembly as a whole to achieve the adjustable height of the thermal field, and the thermal field height is accurately positioned to keep the actual thermal field height of each furnace consistent with the designed height, thereby ensuring that after the water-cooling shield 3 descends to the same designated position, the vertical distance between the silicon liquid level 7 and the water-cooling shield 3 remains consistent, so as to maintain the stability of crystal pulling (crystal induction is a step in crystal pulling).

[0039] In a specific implementation scenario, in order to more intuitively display whether the thermal field assembly is adjusted in place when lifting or lowering, a scale or mark indicating the thermal field design height is provided on the inner wall of the main furnace chamber 1. In addition, since a scale or mark indicating the thermal field design height is provided on the inner wall of the main furnace chamber 1, it is greatly convenient for the operator to timely discover the problem of thermal field height deviation through observation (in actual production, it is not easy to discover this problem).

[0040] Finally, it should be noted that the above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may be subject to various modifications and variations. In the absence of conflicts, the embodiments of the present application and the features in the embodiments may be combined with each other at will. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A single crystal furnace with adjustable thermal field height, characterized in that: include: Main furnace room; A guide tube is arranged in the main furnace chamber; A water-cooling screen is arranged in the guide tube and can be raised and lowered; A crucible is arranged below the guide tube and the water cooling screen; the crucible can be raised and lowered to the seeding pot position; A thermal field assembly is arranged in the main furnace chamber; the lower part of the guide tube and the crucible are located in the thermal field assembly, and the guide tube is installed on the thermal field assembly; A lifting mechanism connected to the bottom of the thermal field assembly; Among them, the lifting mechanism is used to lift the thermal field assembly as a whole to adjust the relative position between the thermal field height and the seeding pot position; the thermal field height refers to the vertical distance between the top of the thermal field assembly and the bottom of the main furnace chamber.

2. The single crystal furnace with adjustable thermal field height according to claim 1, characterized in that: The inner wall of the main furnace chamber is provided with scales or marks for indicating the designed height of the thermal field.

3. The single crystal furnace with adjustable thermal field height according to claim 1, characterized in that: The lifting mechanism includes a cylinder.

4. The single crystal furnace with adjustable thermal field height according to claim 1, characterized in that: The lifting mechanism comprises an oil cylinder.

5. The single crystal furnace with adjustable thermal field height according to claim 1, characterized in that: The lifting mechanism includes a lifting rod and a lifting motor; the lifting rod movably passes through the bottom of the main furnace chamber, one end of the lifting rod is connected to the thermal field component, and the other end is transmission-connected to the output end of the lifting motor.

6. The single crystal furnace with adjustable thermal field height according to claim 1, characterized in that: The upper part of the guide tube is installed on the top of the thermal field assembly.

7. The single crystal furnace with adjustable thermal field height according to any one of claims 1 to 6, characterized in that: The thermal field assembly comprises a heating element and a top thermal insulation element, an upper thermal insulation element, a middle thermal insulation element, a lower thermal insulation element and a bottom thermal insulation element which are arranged in sequence from top to bottom; the heating element is arranged between the thermal field assembly and the crucible.

8. The single crystal furnace with adjustable thermal field height according to claim 7, characterized in that: The heating element is arranged between the middle heat-insulating element and the crucible.

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