Power module packaged by integrated radiator

Abstract

The utility model discloses a power module packaged by an integrated radiator. The power module comprises a radiator, a ceramic copper-clad plate, an electrode terminal and a semiconductor power chip, the plurality of semiconductor power chips and the radiator are integrated into an integrated structure, and the ceramic copper-clad plate and the electrode terminal are arranged on the radiator. According to the utility model, the radiator, the ceramic copper-clad plate, the electrode terminal and the semiconductor power chip are sintered and connected, and the radiator and the power module are integrated, so that the thermal resistance between the power module and the radiator is greatly reduced, the heat dissipation capability of the power module is improved, and the problems of large thermal resistance between the power module and the radiator, high chip junction temperature and low power consumption in the prior art are solved. And heat is difficult to dissipate in time. Different from a conventional method that the power module and the radiator are respectively produced and then assembled, a heat-conducting silicone grease coating procedure is omitted, and the installation efficiency of the power module is greatly improved.

Description

Technical Field

[0001] The utility model belongs to the technical field of power modules, and in particular relates to a power module with integrated radiator packaging. Background Art

[0002] With the increasing application of power electronic systems, the application scenarios of power modules are increasing. Since the power module chip generates a lot of heat, a heat sink is often needed to assist in heat dissipation, so the requirements for miniaturization, lightness, and matching of power modules are becoming higher and higher. At present, due to the large working current and high power generated by power modules, one or more power modules are selected and installed on the heat sink according to the circuit used, and finally a complete power electronic system is formed.

[0003] At present, there are mainly the following problems in the use of power modules and heat sinks: 1. The thermal resistance between the power module chip and the heat sink is large, which makes the chip junction temperature high and requires the product to be used at a reduced rating, limiting the application scenarios and reliability of the power module; 2. When multiple power module products are installed on the heat sink, thermal grease needs to be applied to ensure heat dissipation, which makes the installation complicated and puts higher requirements on the installation matching of the power module and the heat sink; 3. The power module products and the heat sink are both large in size. In application environments with high space requirements, the volume limits the application of the product; 4. The power module products and the heat sink are both heavy. In application environments with high weight requirements, the weight limits the application of the product.

[0004] For example, the Chinese patent with the publication number CN117995791A discloses a substrate-free power module packaging structure based on gas-liquid phase change heat dissipation. It includes an evaporation end copper block, a heat pipe evaporation end channel, a heat pipe insulation connector, a heat pipe condensation end channel and a condensation end copper block; the evaporation end copper block and the condensation end copper block are block-shaped components with a blind hole on one side; the closed end of the heat pipe evaporation end channel is tightly inserted into the blind hole of the evaporation end copper block, and the closed end of the heat pipe condensation end channel is tightly inserted into the blind hole of the condensation end copper block; the open ends of the two are insulated and connected by a tubular heat pipe insulation connector, and the closed heat pipe structure composed of the three is filled with a working medium. However, this patent requires hot and cold pipes to exchange heat, which is large in size, heavy in weight, complex in structure, difficult to install and high in cost, which leads to a limited scope of application and low applicability.

[0005] For example, the Chinese patent with the publication number CN111787683A discloses a main power board packaging integrated structure, including a PCB board, a plastic box with glue filling, a power module, a heat sink and a ceramic substrate, the plastic box with glue filling includes a first surface and a second surface arranged opposite to each other, the power module is installed on the first surface, the PCB board is installed on the second surface, the PCB board is electrically connected to the power module, the heat sink is arranged on the side of the power module facing away from the plastic box with glue filling, the power module is fixed to the heat sink, and the ceramic substrate is arranged between the power module and the heat sink. However, the patent also provides a PCB board and a ceramic substrate, which are heavy, so that the scope of application of the patent is limited; at the same time, the patent is not intended to design a universal power module, and there is no design of electrode terminals, but the heat sink is packaged on the existing power module, which has a limited scope of application and low applicability; and because the power module and the heat sink are produced separately and then combined, thermal conductive silicone grease needs to be applied, resulting in a large thermal resistance between the heat sink and the power module, and the heat dissipation effect will be affected. Utility Model Content

[0006] In order to solve the above problems, the utility model provides a power module with integrated heat sink packaging.

[0007] The utility model is realized through the following technical solutions.

[0008] The utility model provides a power module with integrated heat sink packaging, comprising a heat sink, a ceramic copper clad plate, an electrode terminal and a semiconductor power chip; a plurality of the semiconductor power chips and the heat sink are integrated into an integral structure, and the ceramic copper clad plate and the electrode terminal are arranged on the heat sink.

[0009] Preferably, the heat sink, the ceramic copper clad laminate, the electrode terminal and the semiconductor power chip are connected in sequence; the heat sink, the ceramic copper clad laminate, the electrode terminal and the semiconductor power chip are connected by sintering or welding respectively.

[0010] Preferably, the device further comprises a packaging shell and a packaging medium, wherein the packaging shell is arranged on the heat sink, and the packaging medium is arranged inside the packaging shell.

[0011] Preferably, the packaging shell is connected to the heat sink through a sealant, the packaging shell surrounds the heat sink, the ceramic copper clad plate, the electrode terminals and the semiconductor power chip, and the packaging medium includes gel and resin.

[0012] Preferably, the packaging shell is a PPS plastic shell, the gel is silicone gel, the resin is epoxy resin, and the resin is epoxy resin.

[0013] Preferably, the gel wraps the heat sink, the ceramic copper clad laminate, the electrode terminals and the semiconductor power chip.

[0014] Preferably, the radiator comprises a radiator body, a radiator fixing hole and a heat dissipation fin; the radiator fixing hole is connected to the radiator body, and the radiator body is connected to the heat dissipation fin.

[0015] Preferably, the ceramic copper-clad laminate comprises a ceramic sheet and a copper-attached layer, the ceramic sheet is connected to a heat sink, the copper-attached layer is arranged on the ceramic sheet, and the copper-attached layer is respectively connected to electrode terminals and semiconductor power chips.

[0016] Preferably, the heat sink is an AlSi heat sink, the ceramic copper-clad laminate is a SiN ceramic copper-clad laminate, the electrode terminal is a pure copper electrode terminal with a nickel-plated surface, and the semiconductor power chip is a diode chip.

[0017] The beneficial effects of the utility model are:

[0018] 1. The heat sink, ceramic copper-clad plate, electrode terminal and semiconductor power chip are sintered and connected, and the heat sink and power module are integrated, which greatly reduces the thermal resistance between the power module and the heat sink, improves the heat dissipation capacity of the power module, and solves the problem of large thermal resistance between the power module and the heat sink, high chip junction temperature, and difficulty in timely heat dissipation in the prior art;

[0019] 2. No copper base plate and reasonable and compact structural design make the power module smaller in size, lower in weight and wider in application range;

[0020] 3. Different from the conventional method of assembling the power module and the heat sink separately after production, the thermal grease coating process is removed, which greatly improves the power module installation efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a schematic diagram of the overall structure of the power module after packaging provided by an embodiment of the utility model;

[0022] Figure 2 This is a schematic diagram of the unpackaged overall structure of the power module provided by the embodiment of the utility model;

[0023] Figure 3 This is a schematic diagram of the unpackaged front view structure of a power module provided by an embodiment of the utility model;

[0024] Figure 4 This is a schematic diagram of the unpackaged top view structure of the power module provided by an embodiment of the utility model;

[0025] Figure 5 It is a schematic diagram of the power module packaging structure provided by an embodiment of the utility model;

[0026] Figure 6 This is a schematic diagram of the top view of the power module after packaging provided by an embodiment of the utility model;

[0027] Figure 7 It is a schematic diagram of the heat conduction structure of the prior art;

[0028] Figure 8 It is a schematic diagram of the heat conduction structure of the power module provided by the embodiment of the utility model;

[0029] Fig. 9 It is a schematic diagram of the transient heat sink temperature provided by the embodiment of the utility model;

[0030] Fig.10 It is a schematic diagram of the heat sink temperature under extreme working conditions provided by an embodiment of the utility model.

[0031] In the figure: 1-heat sink, 2-ceramic copper clad board, 3-electrode terminal, 4-semiconductor power chip, 5-package shell, 6-resin, 7-gel, 8-sealant, 9-copper base plate, 10-thermal grease, 101-heat sink body, 102-heat sink fixing hole, 103-heat sink tooth plate, 201-ceramic sheet, 202-copper layer. DETAILED DESCRIPTION

[0032] The technical solution of the utility model is further described below, but the scope of protection required is not limited to the description.

[0033] like Figure 1-4 As shown, it includes a heat sink 1, a ceramic copper clad plate 2, an electrode terminal 3 and a semiconductor power chip 4; a plurality of the semiconductor power chips 4 are integrated with the heat sink 1 into an integral structure, and the ceramic copper clad plate 2 and the electrode terminal 3 are arranged on the heat sink 1.

[0034] The heat sink 1, the ceramic copper clad laminate 2, the electrode terminal 3 and the semiconductor power chip 4 are connected in sequence; the heat sink 1, the ceramic copper clad laminate 2, the electrode terminal 3 and the semiconductor power chip 4 are connected by sintering or welding.

[0035] The heat sink 1 and the power module are connected by sintering or welding, so that the connection is tight and the thermal resistance is small, eliminating the process of applying thermal conductive silicone grease.

[0036] like Figure 5 , 6 As shown, it also includes a packaging shell 5 and a packaging medium. The packaging shell 5 is arranged on the heat sink, and the packaging medium is arranged in the packaging shell 5.

[0037] The packaging shell 5 is connected to the heat sink 1 through a sealant 8 . The packaging shell 5 surrounds the heat sink 1 , the ceramic copper clad plate 2 , the electrode terminal 3 and the semiconductor power chip 4 . The packaging medium includes a gel 7 and a resin 6 .

[0038] The packaging shell 5 is used for injecting the packaging medium, and the sealant 8 ensures that the packaging shell 5 is well bonded to the heat sink 1 to prevent the packaging medium from overflowing during subsequent injection of the packaging medium.

[0039] The gel 7 is used to encapsulate and protect the entire internal structure, and the resin 6 strengthens the structural strength of the entire encapsulation and further protects the internal structure.

[0040] The packaging shell is a PPS plastic shell, the gel 7 is a silicone gel, and the resin 6 is an epoxy resin.

[0041] The packaging shell 5 is a PPS plastic shell, which is mainly used to protect the entire product. The PPS plastic shell has low cost and high reliability.

[0042] The gel 7 wraps the heat sink 1 , the ceramic copper clad plate 2 , the electrode terminal 3 and the semiconductor power chip 4 .

[0043] Silicone gel encapsulation has strong protection ability and good insulation effect. It can strengthen the integrity of electronic devices and improve their resistance to external impact and vibration. It can improve the insulation between internal components and circuits, which is conducive to the miniaturization and lightweight of devices. It can avoid direct exposure of components and circuits, improve the waterproof and moisture-proof performance of devices, and improve the performance and stability parameters.

[0044] Epoxy resin encapsulation, which is harder than silicone gel after curing, can enhance the structural strength of the power module. The use of epoxy resin helps to minimize maintenance costs and extend its durability, extending the service life of the power module while minimizing downtime.

[0045] The radiator 1 includes a radiator body 101 , a radiator fixing hole 102 and a heat dissipation fin 103 ; the radiator fixing hole 102 is connected to the radiator body 101 , and the radiator body 101 is connected to the heat dissipation fin 103 .

[0046] The heat sink body 101 is used to connect the ceramic copper-clad board 2 to ensure connection stability, increase the connection area, and reduce thermal resistance. The heat sink fixing holes 102 are used to fix the module, and the heat sink teeth 103 are used to increase the heat dissipation area.

[0047] The ceramic copper clad board 2 includes a ceramic sheet 201 and a copper-attached layer 202 . The ceramic sheet 201 is connected to the heat sink 1 . The copper-attached layer 202 is disposed on the ceramic sheet 201 . The copper-attached layer 202 is respectively connected to the electrode terminal 3 and the semiconductor power chip 4 .

[0048] The ceramic sheet 201 is used for electrical isolation, and the copper layer 202 is used for electrical connection, electrode terminal 3 welding, and semiconductor power chip 4 welding. The shape, path and size of the copper layer 202 are set according to the module circuit structure and current load.

[0049] The heat sink 1 is an AlSi heat sink, the ceramic copper-clad plate 2 is a SiN ceramic copper-clad plate, the electrode terminal 3 is a pure copper electrode terminal with a nickel-plated surface, the semiconductor power chip 4 is a diode chip, and the packaging shell 5 is a PPS plastic shell.

[0050] The electrode terminal 3 is a pure copper electrode terminal with nickel plating on the surface, which ensures that the internal resistance of the power module is low and the electrode terminal has a stable external connection; the ceramic copper clad board 2 is a SiN ceramic copper clad board, which has good conductivity, heat dissipation, welding performance and high stress resistance; the heat sink 1 is an AlSi heat sink, which is convenient for rapid heat dissipation, and the surface of the AlSi heat sink is nickel-plated, which is convenient for anti-oxidation and reliable welding; the semiconductor power chip 4 is a diode chip with unidirectional conductivity.

[0051] In this embodiment, the connection is performed by sintering.

[0052] like Figure 7 As shown, heat conduction in a conventional power module starts from the semiconductor power chip 4 and then enters the heat sink 1 after passing through the ceramic copper-clad board 2, the copper base plate 9, and the thermal grease 10, resulting in a relatively large thermal resistance.

[0053] like Figure 8 As shown, in the power module with integrated heat sink package provided by the present invention, the heat conduction path starts from the semiconductor power chip 4, passes through the ceramic copper clad board 2 and directly enters the heat sink 1, and the thermal resistance is relatively small.

[0054] The manufacturing method of the power module with integrated heat sink package mentioned above comprises the following steps:

[0055] Step S1, sintering the ceramic copper-clad plate 2 on the upper surface of the heat sink 1;

[0056] Step S2, sintering the electrode terminal 3 on the upper surface of the ceramic copper-clad plate 2;

[0057] Step S3, sintering the semiconductor power chip 4 on the upper surface of the electrode terminal 3;

[0058] Step S4, the packaging shell 5 is bonded to the top of the heat sink by the sealant 8, and ensures that the packaging shell 5 completely encapsulates the ceramic copper clad board 2, the electrode terminal 3 and the semiconductor power chip 4;

[0059] Step S5, pouring the gel 7 into the packaging shell 5;

[0060] Step S6: After the gel 7 is cured, the resin 6 is poured into the packaging shell 5 to obtain a power module with an integrated heat sink package.

[0061] The heat sink 1 and the power module are connected by sintering, so that the connection is tight and the thermal resistance is small, the process of applying thermal conductive silicone grease is eliminated, and the installation is simple.

[0062] The gel 7 and the resin 6 are used for packaging, so as to protect the ceramic copper-clad plate 2, the electrode terminal 3 and the semiconductor power chip 4 and insulate them from the outside world; the method of infusion packaging is simple and reliable, and has high manufacturing efficiency.

[0063] The temperature of the heat sink and the junction temperature of the semiconductor power chip of the power module provided by the utility model under transient and extreme working conditions are obtained through simulation.

[0064] like Fig. 9 As shown, the temperature of the heat sink under transient conditions of the power module.

[0065] like Fig.10 The figure shows the temperature of the heat sink under the extreme working condition of the power module, where T A =75℃, altitude 7000m.

[0066] According to the simulation results, it can be obtained that the heat dissipation capacity of the power module provided by the utility model is greatly improved compared with the traditional power module, and is suitable for various application scenarios of the power module.

[0067] The utility model sinter-connects the heat sink 1, the ceramic copper-clad plate 2, the electrode terminal 3 and the semiconductor power chip 4, integrates the heat sink 1 and the power module, greatly reduces the thermal resistance between the power module and the heat sink 1, improves the heat dissipation capacity of the power module, and solves the problem in the prior art that the thermal resistance between the power module and the heat sink 1 is large, the chip junction temperature is high, and the heat is difficult to dissipate in time;

[0068] No copper base plate and reasonable and compact structural design make the power module smaller in size, lower in weight and more widely used;

[0069] Different from the conventional method of assembling the power module and heat sink separately after production, the thermal grease coating process is eliminated, which greatly improves the power module installation efficiency.

Claims

1. A power module with integrated heat sink package, characterized in that: It comprises a heat sink (1), a ceramic copper-clad plate (2), an electrode terminal (3) and a semiconductor power chip (4); a plurality of the semiconductor power chips (4) and the heat sink (1) are integrated into an integral structure, and the ceramic copper-clad plate (2) and the electrode terminal (3) are arranged on the heat sink (1).

2. The power module according to claim 1, characterized in that: The heat sink (1), the ceramic copper-clad plate (2), the electrode terminal (3) and the semiconductor power chip (4) are connected in sequence; the heat sink (1), the ceramic copper-clad plate (2), the electrode terminal (3) and the semiconductor power chip (4) are connected by sintering or welding.

3. The power module according to claim 1, characterized in that: It also comprises a packaging shell (5) and a packaging medium, wherein the packaging shell (5) is arranged on the heat sink, and the packaging medium is arranged inside the packaging shell (5).

4. The power module according to claim 3, characterized in that: The packaging shell (5) is connected to the heat sink (1) via a sealant (8), and the packaging shell (5) surrounds the heat sink (1), the ceramic copper-clad plate (2), the electrode terminal (3) and the semiconductor power chip (4).

5. The power module according to claim 1, characterized in that: The radiator (1) comprises a radiator body (101), a radiator fixing hole (102) and a heat dissipation fin (103); the radiator fixing hole (102) is connected to the radiator body (101), and the radiator body (101) is connected to the heat dissipation fin (103).

6. The power module according to claim 1, characterized in that: The ceramic copper-clad plate (2) comprises a ceramic sheet (201) and a copper-attached layer (202); the ceramic sheet (201) is connected to a heat sink (1); the copper-attached layer (202) is arranged on the ceramic sheet (201); and the copper-attached layer (202) is respectively connected to an electrode terminal (3) and a semiconductor power chip (4).

7. The power module according to claim 1, characterized in that: The heat sink (1) is an AlSi heat sink, the ceramic copper-clad plate (2) is a SiN ceramic copper-clad plate, the electrode terminal (3) is a pure copper electrode terminal with a nickel-plated surface, and the semiconductor power chip (4) is a diode chip.

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