Low-temperature environment negative ion generator circuit

Abstract

The utility model discloses a low-temperature environment anion generator circuit, which comprises a power supply, an input anti-reverse-connection protection circuit, an input impact current suppression circuit, a first MOS (Metal Oxide Semiconductor) switching circuit and a second MOS switching circuit, a double-voltage direct-current negative high voltage is generated through the high-voltage double-voltage rectifying circuit, and after passing through the high-voltage overload detection circuit, the negative high voltage is provided for the ion generator assembly, and negative ions with negative charges are released to the surrounding space; the second MOS switch circuit is mainly used for providing a working power supply required by the PCT heater and is connected with the NTC temperature detection module, the PCT heater is mainly used for low-temperature heating of a chip, the NTC temperature detection component is used for detecting the ambient temperature around the chip, and when the ambient temperature around the chip is detected to be lower than-20 DEG C, the NTC temperature detection component is connected with the PCT heater. And the low-temperature heating control circuit provides a working power supply for the PCT heater through the second MOS switching circuit, and starts to heat the periphery of the chip, so that the function of the whole circuit is not influenced by an ultralow-temperature environment.

Description

Technical Field

[0001] The utility model relates to a low-temperature environment negative ion generator circuit, in particular to a low-temperature environment negative ion generator circuit adapted to work in a low-temperature (below -25°C) environment. Background Art

[0002] Conventional chips gradually lose their functions in low-temperature environments below -25 degrees, and cannot adapt to various applications in low-temperature environments. Currently, there are few chips with similar functions that can withstand low-temperature environments, and the selection is difficult and the cost is high. Based on this, how to overcome the above problems in low-temperature environments is an urgent problem to be solved by the utility model. Utility Model Content

[0003] The technical problem to be solved by the utility model is to provide a low-temperature environment negative ion generator circuit, which has the characteristics of adapting to working in an environment with a low temperature below -25°C. It adopts conventional industrial-grade chips and civilian-grade chips, and cooperates with a PTC heater, and can also be applied to a working environment with a low temperature below -25°C.

[0004] In order to solve the above technical problems, the technical solution of the utility model is: a low-temperature environment negative ion generator circuit, the innovation of which is: the low-temperature environment negative ion generator circuit includes an input reverse connection protection connected to a power supply, an input impact current suppression connected to the input reverse connection protection, a first MOS switch circuit connected to the input impact current suppression, a high-voltage generator circuit connected to the first MOS switch circuit, a high-voltage doubler rectifier circuit connected to the high-voltage generator circuit, a high-voltage overload detection circuit connected to the high-voltage doubler rectifier circuit, an ion generator assembly and an overload protection circuit respectively connected to the high-voltage overload detection circuit, and the overload protection circuit is connected to the first MOS switch circuit;

[0005] A second MOS switch circuit is connected to the input surge current suppression, the second MOS switch circuit is respectively connected to the PCT heater and the NTC temperature detection component, the NTC temperature detection component is connected to the low-temperature heating control circuit, and the low-temperature heating control circuit is connected to the second MOS switch circuit.

[0006] Preferably, the power supply is a 12V DC power supply; the input reverse connection protection is a diode D1; and the input surge current suppression is an inductor L1.

[0007] Preferably, the first MOS switch circuit includes a transistor Q1 connected to an input impact current suppression, the source of the transistor Q1 is connected to the input impact current suppression, the gate of the transistor Q1 is connected to the low-temperature heating control circuit, and the drain of the transistor Q1 provides the required power to the chip IC3 of the high-voltage generator circuit through a resistor R1, and capacitors C2 and C3 that are connected in series with the resistor R1 and in parallel with each other.

[0008] Preferably, the high-voltage generator circuit includes an IC3 chip connected to the first MOS switch circuit, a transistor Q3 and a transistor Q4 connected to the IC3 chip, and a step-up transformer TR1 connected in parallel at both ends of the transistor Q3; the transistor Q3 is connected to the input impulse current suppression through a series inductor L2 and a heating element PT4; and the transformer is connected to a high-voltage voltage doubling rectifier circuit.

[0009] Preferably, the IC3 chip is a chip with similar functions to GR8853, and the IC3 chip is provided with a first pin connected to the first MOS switch circuit, a second pin connected to the resistor R22 and the resistor R23 arranged in series, a third pin connected to the resistor R22 and grounded through the capacitor C11, a fourth pin connected to the ground terminal, a fifth pin connected to the transistor Q4 through the resistor R25, a sixth pin connected to one end of the primary winding of the transformer through the resistor R24, a seventh pin connected to the transistor Q3 through the resistor R20, and an eighth pin connected to the first pin through the diode D3, and a capacitor C8 is provided between the eighth pin and the sixth pin;

[0010] The gate of the transistor Q3 is connected to the resistor R20, the source of the transistor Q3 is connected to one end of the transformer primary winding and the resistor R24, a resistor R21 is provided between the gate of the transistor Q3 and the source of the transistor Q3, the drain of the transistor Q3 is connected to the inductor L2, and the drain of the transistor Q3 is connected to the other end of the transformer primary winding via capacitors C6 and C9 provided in parallel;

[0011] The gate of the transistor Q4 is connected to the resistor R25, the source of the transistor Q4 is grounded, a resistor R26 is arranged between the gate of the transistor Q4 and the source of the transistor Q4, the drain of the transistor Q4 is connected to one end of the primary winding of the transformer and the resistor R24, and the source of the transistor Q4 is connected to the other end of the primary winding of the transformer through capacitors C13 and C14 arranged in parallel.

[0012] Preferably, the high-voltage voltage doubler rectifier circuit is arranged at both ends of the secondary winding of the transformer, including a diode D4 and a resistor R19 arranged in series at one end of the secondary winding, the resistor R19 is connected to the negative electrode of the HVDC, a capacitor C10 and a resistor R28 are arranged in series at the other end of the secondary winding, the resistor R28 is connected to the positive electrode of the HVDC, and the ion generator assembly is arranged between the negative electrode of the HVDC and the positive electrode of the HVDC;

[0013] A diode D5 is provided at the intersection of one end of the secondary winding connected to the diode D4 and the capacitor C10 and the resistor R28; a capacitor C7 is provided at the intersection of one end of the secondary winding connected to the capacitor C10 and the diode D4 and the resistor R19.

[0014] Preferably, a high-voltage overload detection circuit is arranged between the high-voltage voltage doubler rectifier circuit and the ion generator assembly, and the high-voltage overload detection circuit includes a resistor R29 arranged between the HVDC positive pole and the resistor R28, and a diode D6 arranged between the intersection of the resistor R28 and the resistor R29 and the low-temperature heating control circuit, and the diode D6 is grounded through a capacitor C12 and a resistor R27 arranged in parallel.

[0015] Preferably, the low-temperature heating control circuit is a comparator IC2 chip, the comparator IC2 chip is a LM2903 chip, the overload protection circuit is integrated on the comparator IC2 chip, and the overload protection circuit is composed of the resistor R27, the capacitor C12 and the comparator IC2 chip.

[0016] Preferably, the second MOS switch circuit includes a transistor Q2, the source of the transistor Q2 is grounded, the gate of the transistor Q2 is connected to the NTC temperature detection component through a resistor R12, a resistor R16 is arranged between the source of the transistor Q2 and the gate of the transistor Q2, and the drain of the transistor Q2 is connected to the PCT heater.

[0017] Preferably, the PCT heater comprises a heating element PT1, a heating element PT2 and a heating element PT3 arranged in parallel;

[0018] The NTC temperature detection component includes a resistor R4 arranged between the low-temperature heating control circuit and the ground terminal, a resistor R6 and a resistor NT1 connected in series with the resistor R4 and in parallel with each other, and a resistor R15 connected in series with the parallel resistor R6 and the resistor NT1, and the resistor R15 is grounded.

[0019] The advantages of the utility model are: by adopting the above structure, in order to cope with the low temperature environment, a double voltage DC negative high voltage is generated by a high voltage doubler rectifier circuit, and after passing through a high voltage overload detection circuit, the negative high voltage is provided to the ion generator component, and the ion generator component releases negatively charged ions, i.e., negative ions, to the surrounding space. The second MOS switch circuit is mainly used to provide the working power required by the PCT heater, the PCT heater is mainly used for low temperature heating of the chip, and the NTC temperature detection component is used to detect the ambient temperature around the chip. When the ambient temperature around the chip is detected to be below -20°C, the low temperature heating control circuit will provide working power to the PCT heater through the second MOS switch circuit, and start heating the periphery of the chip. By adopting the coordination of the above functional circuits, it is ensured that the function of the entire circuit will not be affected by the ultra-low temperature environment. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The utility model is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0021] Figure 1 The utility model is a logic block diagram of a negative ion generator circuit in a low temperature environment.

[0022] Figure 2 The utility model is a circuit diagram of a negative ion generator circuit in a low temperature environment.

[0023] Figure 3 The utility model discloses a circuit diagram of a low-temperature environment negative ion generator circuit, which includes a power supply, input reverse connection protection, input impact current suppression and a first MOS switch circuit.

[0024] Figure 4 The utility model discloses a circuit diagram of a low-temperature environment negative ion generator circuit, which includes a low-temperature heating control circuit, an overload protection circuit, a second MOS switch circuit, a PCT heater and an NTC temperature detection component.

[0025] Figure 5 The utility model discloses a circuit diagram of a low-temperature environment negative ion generator circuit, which includes a high-voltage generator circuit and a part of a high-voltage overload detection circuit.

[0026] Figure 6 The utility model discloses a circuit diagram of a negative ion generator for a low temperature environment, which includes a high voltage voltage doubling rectification circuit, a part of a high voltage overload detection circuit and an ion generator component.

[0027] In the figure: 1-power supply, 2-input reverse connection protection, 3-input impact current suppression, 4-first MOS switch circuit, 5-high voltage generator circuit, 6-high voltage doubler rectifier circuit, 7-high voltage overload detection circuit, 8-ion generator assembly, 9-overload protection circuit, 10-second MOS switch circuit, 11-PCT heater, 12-NTC temperature detection component, 13-low temperature heating control circuit. DETAILED DESCRIPTION

[0028] The low temperature environment negative ion generator circuit of the utility model comprises an input reverse connection protection 2 connected to a power supply 1, an input impact current suppression 3 connected to the input reverse connection protection 2, a first MOS switch circuit 4 connected to the input impact current suppression 3, a high voltage generator circuit 5 connected to the first MOS switch circuit 4, a high voltage voltage doubler rectifier circuit 6 connected to the high voltage generator circuit 5, a high voltage overload detection circuit 7 connected to the high voltage voltage doubler rectifier circuit 6, an ion generator assembly 8 and an overload protection circuit 9 respectively connected to the high voltage overload detection circuit 7, and the overload protection circuit 9 is connected to the first MOS switch circuit 4. The power supply, the input reverse connection protection, and the input impact current suppression mainly guarantee the power supply voltage and current required by the high voltage generator circuit 5, and a DC negative high voltage with a double voltage is generated by the high voltage voltage doubler rectifier circuit 6, and after passing through the high voltage overload detection circuit 6, the negative high voltage is provided to the ion generator assembly 8, and the ion generator assembly 8 releases negatively charged ions, i.e., negative ions, to the surrounding space.

[0029] The second MOS switch circuit 10 connected to the input surge current suppression is connected to the PCT heater 11 and the NTC temperature detection component 12 respectively. The NTC temperature detection component 12 is connected to the low temperature heating control circuit 13. The low temperature heating control circuit 13 is connected to the second MOS switch circuit 10. The second MOS switch circuit 10 is mainly used to provide the working power required by the PCT heater 11. The PCT heater 11 is mainly used for low temperature heating of the chip (from the perspective of reducing costs, non-military-grade chips fail to function logically in low temperature environments, and heating the chip is mainly used to ensure the working performance of the chip in low temperature environments below -25°C). The NTC temperature detection component 12 is used to detect the ambient temperature around the chip. When the ambient temperature around the chip is detected to be below -20°C, the low temperature heating control circuit 13 will provide the PCT heater 11 with working power through the second MOS switch circuit 10 and start heating the chip. By using the coordination of the above-mentioned functional circuits, it is ensured that the function of the entire circuit will not be affected by the ultra-low temperature environment.

[0030] By adopting the above structure, in order to cope with low temperature environments, such as in ultra-low temperature refrigerators, at minus 45 degrees, the functions of many components will be reduced. In order to ensure that the components are not affected by the ultra-low temperature environment, the temperature detection and heating are performed through the NTC temperature detection component 12, the PCT heater 11, and the low-temperature heating control circuit 13. When the NTC temperature detection component 12 detects that the temperature is lower than minus 15 degrees, the low-temperature heating control circuit 13 is used for heating. When the NTC temperature detection component 12 detects that the temperature is lower than minus 30 degrees, the PCT heater 11 is started for heating. Based on the temperature compensation function, the problem of reduced function of components in low temperature environments is solved.

[0031] The power supply 1 of the utility model is a 12V DC power supply; the input reverse connection protection 2 is a diode D1, which is mainly realized by utilizing the unidirectional conductivity function of the diode D1 (i.e.: forward conduction and reverse blocking); the input impact current suppression 3 is an inductor L1, which is mainly realized by utilizing the characteristic that the current of the inductor L1 cannot change suddenly.

[0032] The first MOS switch circuit 4 includes a transistor Q1 connected to the input surge current suppression 3, the source of the transistor Q1 is connected to the input surge current suppression 3, the gate of the transistor Q1 is connected to the low-temperature heating control circuit 13, the source of the transistor Q1 is grounded through a resistor R1, a capacitor C2 and a capacitor C3 which are arranged in series with the resistor R1 and in parallel with each other, and a resistor R2 is arranged between the source of the transistor Q1 and the gate of the transistor Q1. The first MOS switch circuit 4 mainly provides the power required for the IC3 chip of the high-voltage generator circuit to work. When the first MOS switch circuit works, the circuit outputs high voltage. When the first MOS switch circuit stops working, or works abnormally (overload protection), the circuit does not output high voltage.

[0033] The high-voltage generator circuit 5 includes an IC3 chip connected to the first MOS switch circuit 4, a transistor Q3 and a transistor Q4 connected to the IC3 chip, and a transformer connected to both ends of the transistor Q3. The transistor Q3 is connected to the input surge current suppression 3 through a series inductor L2 and a heating element PT4, and the transformer is connected to a high-voltage voltage doubler rectifier circuit 6. The high-voltage generator circuit 5 is composed of a chip IC3, a transistor Q3, a transistor Q4 and peripheral components, and mainly generates an AC signal of tens of kilohertz to provide the AC power required by the step-up transformer TR1.

[0034] The above-mentioned IC3 chip is a GR8853 chip, and the IC3 chip is provided with a first pin connected to the first MOS switch circuit 4, a second pin connected to the resistor R22 and the resistor R23 arranged in series, a third pin connected to the resistor R22 and grounded through the capacitor C11, a fourth pin connected to the ground end, a fifth pin connected to the transistor Q4 through the resistor R25, a sixth pin connected to one end of the primary winding of the transformer through the resistor R24, a seventh pin connected to the transistor Q3 through the resistor R20, and an eighth pin connected to the first pin through the diode D3, and a capacitor C8 is provided between the eighth pin and the sixth pin.

[0035] The gate of the transistor Q3 is connected to the resistor R20, the source of the transistor Q3 is connected to one end of the transformer primary winding and the resistor R24, a resistor R21 is arranged between the gate of the transistor Q3 and the source of the transistor Q3, the drain of the transistor Q3 is connected to the inductor L2, and the drain of the transistor Q3 is connected to the other end of the transformer primary winding through capacitors C6 and C9 arranged in parallel.

[0036] The gate of the transistor Q4 is connected to the resistor R25, the source of the transistor Q4 is grounded, a resistor R26 is arranged between the gate of the transistor Q4 and the source of the transistor Q4, the drain of the transistor Q4 is connected to one end of the primary winding of the transformer and the resistor R24, and the source of the transistor Q4 is connected to the other end of the primary winding of the transformer through capacitors C13 and C14 arranged in parallel.

[0037] The high-voltage voltage-doubling rectifier circuit 6 of the utility model is arranged at both ends of the secondary winding of the transformer, including a diode D4 and a resistor R19 arranged in series at one end of the secondary winding, the resistor R19 is connected to the negative pole of HVDC, a capacitor C10 and a resistor R28 are arranged in series at the other end of the secondary winding, the resistor R28 is connected to the positive pole of HVDC, and the ion generator assembly 8 is arranged between the negative pole of HVDC and the positive pole of HVDC. A diode D5 is arranged at the intersection of the capacitor C10 and the resistor R28 at one end of the secondary winding connected to the diode D4. A capacitor C7 is arranged at the intersection of the diode D4 and the resistor R19 at one end of the secondary winding connected to the capacitor C10. The high-voltage voltage-doubling rectifier circuit 6 is composed of a high-voltage diode D4, a diode D5, a high-voltage ceramic capacitor C7, and a capacitor C10, and is used to generate a DC high voltage of twice the output voltage of the high-voltage winding of the transformer TR1.

[0038] A high-voltage overload detection circuit 7 is provided between the high-voltage voltage doubler rectifier circuit 6 and the ion generator assembly 8. The high-voltage overload detection circuit 7 includes a resistor R29 provided between the HVDC positive electrode and the resistor R28, a diode D6 provided between the intersection of the resistor R28 and the resistor R29 and the low-temperature heating control circuit 13, and the diode D6 is grounded through a capacitor C12 and a resistor R27 provided in parallel. The high-voltage overload detection circuit 7 samples the signal of the resistor R29 and the diode D6, and after filtering by the resistor R27 and the capacitor C12, is used to provide the comparator IC2 chip for logic judgment.

[0039] The above-mentioned low-temperature heating control circuit 13 is a comparator IC2 chip, and the comparator IC2 chip is a LM2903 chip. The comparator IC2 chip is integrated with an overload protection circuit 9, and the overload protection circuit is composed of a resistor R27, a capacitor C12 and a comparator IC2 chip. The low-temperature heating control circuit 13 is mainly composed of a comparator IC2 chip and peripheral components, and the IC1 chip mainly provides the reference voltage required by the comparator IC2 chip; when the ambient temperature is lower than the set value, the comparator IC2 chip performs a logical judgment, so that the transistor Q2 is turned on, and the heating element PT1, the heating element PT2 and the heating element PT3 start heating; on the contrary, when the ambient temperature is higher than the set value, the transistor Q2 is turned off, and the heating element PT1, the heating element PT2 and the heating element PT3 have no working power supply, and the heating will stop.

[0040] The ion generator assembly 8 is composed of a negative high-voltage electrode and a positive high-voltage (ground) electrode. Under the action of the electric field force, the negative high-voltage electrode releases negatively charged ions into the surrounding space. The overload protection circuit 9 is composed of a resistor R27, a capacitor C12, a comparator IC2 chip and peripheral components. When the signal voltage from the resistor R29 is too large, the comparator IC2 chip will perform a logical judgment, so that the transistor Q1 is turned off, and the first MOS switch circuit is turned off to achieve the purpose of overload protection.

[0041] The second MOS switch circuit 10 includes a transistor Q2, the source of the transistor Q2 is grounded, the gate of the transistor Q2 is connected to the NTC temperature detection component 12 through a resistor R12, a resistor R16 is provided between the source of the transistor Q2 and the gate of the transistor Q2, and the drain of the transistor Q2 is connected to the PCT heater 11. The second MOS switch circuit 10 is composed of the transistor Q2 and peripheral components, and mainly controls the working power required by the heating element PT1, the heating element PT2 and the heating element PT3 by turning the transistor Q2 on and off.

[0042] The PCT heater 11 includes a heating element PT1, a heating element PT2 and a heating element PT3 which are arranged in parallel. The PCT heater 11 is mainly used to heat the chip and is distributed around the chip to improve the impact of the chip in a low temperature environment.

[0043] The NTC temperature detection component 12 includes a resistor R4 disposed between the low temperature heating control circuit 13 and the ground terminal, a resistor R6 and a resistor NT1 connected in series with the resistor R4 and in parallel with each other, and a resistor R15 connected in series with the parallel resistor R6 and the resistor NT1, and the resistor R15 is grounded. The NTC temperature detection component 12 mainly detects the ambient temperature around the chip.

[0044] The above embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for those of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A low temperature environment negative ion generator circuit, characterized in that: The low-temperature environment negative ion generator circuit includes an input reverse connection protection connected to a power supply, an input impact current suppression connected to the input reverse connection protection, a first MOS switch circuit connected to the input impact current suppression, a high-voltage generator circuit connected to the first MOS switch circuit, a high-voltage voltage doubler rectifier circuit connected to the high-voltage generator circuit, a high-voltage overload detection circuit connected to the high-voltage voltage doubler rectifier circuit, an ion generator assembly and an overload protection circuit respectively connected to the high-voltage overload detection circuit, and the overload protection circuit is connected to the first MOS switch circuit; A second MOS switch circuit is connected to the input surge current suppression, the second MOS switch circuit is respectively connected to the PCT heater and the NTC temperature detection component, the NTC temperature detection component is connected to the low-temperature heating control circuit, and the low-temperature heating control circuit is connected to the second MOS switch circuit.

2. A low temperature environment negative ion generator circuit as claimed in claim 1, characterized in that: The power supply is a 12V DC power supply; the input reverse connection protection is a diode D1; the input impact current suppression is an inductor L1.

3. A low temperature environment negative ion generator circuit as claimed in claim 1, characterized in that: The first MOS switch circuit includes a transistor Q1 connected to an input impact current suppression, a source of the transistor Q1 is connected to the input impact current suppression, a gate of the transistor Q1 is connected to a low-temperature heating control circuit, the source of the transistor Q1 is grounded through a resistor R1, a capacitor C2 and a capacitor C3 which are arranged in series with the resistor R1 and in parallel with each other, and a resistor R2 is arranged between the source of the transistor Q1 and the gate of the transistor Q1.

4. A low temperature environment negative ion generator circuit as claimed in claim 1, characterized in that: The high-voltage generator circuit includes an IC3 chip connected to the first MOS switch circuit, a transistor Q3 and a transistor Q4 connected to the IC3 chip, and a transformer connected in parallel at both ends of the transistor Q3. The transistor Q3 is connected to the input impulse current suppression through a series inductor L2 and a heating element PT4, and the transformer is connected to a high-voltage voltage doubler rectifier circuit.

5. A low temperature environment negative ion generator circuit as claimed in claim 4, characterized in that: The IC3 chip is a GR8853 chip, and is provided with a first pin connected to the first MOS switch circuit, a second pin connected to the resistor R22 and the resistor R23 arranged in series, a third pin connected to the resistor R22 and grounded through the capacitor C11, a fourth pin connected to the ground terminal, a fifth pin connected to the transistor Q4 through the resistor R25, a sixth pin connected to one end of the primary winding of the transformer through the resistor R24, a seventh pin connected to the transistor Q3 through the resistor R20, and an eighth pin connected to the first pin through the diode D3, and a capacitor C8 is provided between the eighth pin and the sixth pin; The gate of the transistor Q3 is connected to the resistor R20, the source of the transistor Q3 is connected to one end of the transformer primary winding and the resistor R24, a resistor R21 is provided between the gate of the transistor Q3 and the source of the transistor Q3, the drain of the transistor Q3 is connected to the inductor L2, and the drain of the transistor Q3 is connected to the other end of the transformer primary winding via capacitors C6 and C9 provided in parallel; The gate of the transistor Q4 is connected to the resistor R25, the source of the transistor Q4 is grounded, a resistor R26 is arranged between the gate of the transistor Q4 and the source of the transistor Q4, the drain of the transistor Q4 is connected to one end of the primary winding of the transformer and the resistor R24, and the source of the transistor Q4 is connected to the other end of the primary winding of the transformer through capacitors C13 and C14 arranged in parallel.

6. A low temperature environment negative ion generator circuit as claimed in claim 4, characterized in that: The high-voltage voltage doubler rectifier circuit is arranged at both ends of the secondary winding of the transformer, including a diode D4 and a resistor R19 arranged in series at one end of the secondary winding, the resistor R19 is connected to the negative electrode of the HVDC, a capacitor C10 and a resistor R28 are arranged in series at the other end of the secondary winding, the resistor R28 is connected to the positive electrode of the HVDC, and the ion generator assembly is arranged between the negative electrode of the HVDC and the positive electrode of the HVDC; A diode D5 is provided at the intersection of one end of the secondary winding connected to the diode D4 and the capacitor C10 and the resistor R28; a capacitor C7 is provided at the intersection of one end of the secondary winding connected to the capacitor C10 and the diode D4 and the resistor R19.

7. A low temperature environment negative ion generator circuit as claimed in claim 6, characterized in that: A high-voltage overload detection circuit is arranged between the high-voltage voltage doubler rectifier circuit and the ion generator assembly, and the high-voltage overload detection circuit includes a resistor R29 arranged between the HVDC positive electrode and the resistor R28, and a diode D6 arranged between the intersection of the resistors R28 and R29 and the low-temperature heating control circuit, and the diode D6 is grounded through a capacitor C12 and a resistor R27 arranged in parallel.

8. A low temperature environment negative ion generator circuit as claimed in claim 7, characterized in that: The low-temperature heating control circuit is a comparator IC2 chip, and the comparator IC2 chip is a LM2903 chip. The overload protection circuit is integrated on the comparator IC2 chip, and the overload protection circuit is composed of the resistor R27, the capacitor C12 and the comparator IC2 chip.

9. A low temperature environment negative ion generator circuit as claimed in claim 1, characterized in that: The second MOS switch circuit includes a transistor Q2, the source of the transistor Q2 is grounded, the gate of the transistor Q2 is connected to the NTC temperature detection component through a resistor R12, a resistor R16 is arranged between the source of the transistor Q2 and the gate of the transistor Q2, and the drain of the transistor Q2 is connected to the PCT heater.

10. A low temperature environment negative ion generator circuit as claimed in claim 1, characterized in that: The PCT heater comprises a heating element PT1, a heating element PT2 and a heating element PT3 arranged in parallel; The NTC temperature detection component includes a resistor R4 arranged between the low-temperature heating control circuit and the ground terminal, a resistor R6 and a resistor NT1 connected in series with the resistor R4 and in parallel with each other, and a resistor R15 connected in series with the parallel resistor R6 and the resistor NT1, and the resistor R15 is grounded.

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