A temperature measuring device for the main furnace chamber of a heavily doped single crystal furnace

Abstract

A temperature measuring device for the main furnace chamber of a heavily-doped single crystal furnace, wherein a temperature measuring hole is provided on the side wall of the main furnace chamber, the temperature measuring device is arranged on the outside of the main furnace chamber and at the temperature measuring hole, the temperature measuring device comprises glass and a thermometer for detecting the temperature inside the main furnace chamber, the glass is located between the thermometer and the main furnace chamber, the laser beam of the thermometer coincides with the center line of the temperature measuring hole, a dust blower with openings at both ends is provided between the glass and the outer wall of the main furnace chamber, one end of the dust blower is sealedly connected to the outer wall of the furnace body, the other end of the dust blower is sealedly connected to the glass, the side wall of the dust blower is provided with an air inlet pipe for blowing air toward the main furnace chamber, the air outlet of the air inlet pipe is located in the dust blower and has a distance from the center line of the temperature measuring hole. The utility model inhibits impurities from entering the dust blower through the temperature measuring hole, thereby avoiding impurities from gathering at the temperature measuring hole and the glass, thereby improving the accuracy of the thermometer in measuring the temperature inside the main furnace chamber, and ensuring the stable growth of heavily-doped single crystals.

Description

Technical Field

[0001] The utility model relates to the technical field of single crystal silicon production, in particular to a temperature measuring device for a main furnace chamber of a heavily doped single crystal furnace. Background Art

[0002] At present, in order to reduce the switching loss of silicon electronic devices as much as possible and improve device efficiency, the single-crystal silicon substrate is required to have a lower resistivity. For example, microwave power devices, Schottky devices, field-controlled high-frequency devices, etc. require the resistivity of the single-crystal silicon substrate to be below 3mΩ·cm. In order to obtain ultra-low resistance, high concentration doping is required during the preparation of single-crystal silicon.

[0003] During the heavily-doped single crystal silicon pulling process, in order to ensure the smooth growth of the crystal, a temperature measuring hole is opened in the main furnace chamber. A thermometer is installed at the temperature measuring hole to obtain the temperature inside the main furnace chamber. Glass for sealing the temperature measuring hole is installed between the thermometer and the main furnace chamber. However, due to the high furnace pressure and a large amount of volatile impurities in the heavily-doped single crystal furnace, impurities accumulate at the temperature measuring hole, which in turn causes glass contamination, affects the temperature measurement signal, and further affects the temperature measurement accuracy. Utility Model Content

[0004] In order to solve the problem of glass contamination in the prior art, the utility model provides a temperature measuring device for the main furnace chamber of a heavily doped single crystal furnace to avoid impurities from gathering in the temperature measuring holes and the glass, thereby improving the accuracy of the temperature measuring instrument in measuring the temperature in the main furnace chamber, thereby ensuring the stable growth of heavily doped single crystals.

[0005] In order to achieve the above-mentioned purpose, the specific scheme adopted by the utility model is: a temperature measuring device for the main furnace chamber of a heavily-doped single crystal furnace, the side wall of the main furnace chamber is provided with a temperature measuring hole, the temperature measuring device is arranged on the outside of the main furnace chamber and is located at the temperature measuring hole, the temperature measuring device includes glass and a thermometer for detecting the temperature inside the main furnace chamber, the glass is located between the thermometer and the main furnace chamber, the laser beam of the thermometer coincides with the center line of the temperature measuring hole, a dust blower with openings at both ends is arranged between the glass and the outer wall of the main furnace chamber, one end of the dust blower is sealedly connected to the outer wall of the furnace body, and the other end of the dust blower is sealedly connected to the glass, the side wall of the dust blower is provided with an air inlet pipe for blowing air toward the main furnace chamber, and the air outlet of the air inlet pipe is located in the dust blower and has a distance between it and the center line of the temperature measuring hole.

[0006] As an optimization scheme of the above-mentioned temperature measuring device of the main furnace chamber of the heavily-doped single crystal furnace: the outer wall of the main furnace chamber surrounding the temperature measuring hole has an annular boss extending toward the outer side of the main furnace chamber, and the dust blowing cylinder is fixedly connected to the annular boss.

[0007] As another optimization scheme of the above-mentioned temperature measuring device of the main furnace chamber of the heavily-doped single crystal furnace: a first sealing ring is arranged between the annular boss and the dust blowing cylinder.

[0008] As another optimization scheme of the above-mentioned temperature measuring device for the main furnace chamber of a heavily-doped single crystal furnace: the air inlet pipe includes a vertical portion, one end of the vertical portion extends out of the dust blower, and the other end of the vertical portion extends into the inner cavity of the dust blower and bends toward the main furnace chamber to form a bent portion.

[0009] As another optimization scheme of the above-mentioned temperature measuring device for the main furnace chamber of the heavily-doped single crystal furnace: the angle between the extension direction of the bent portion and the extension direction of the vertical portion is 90-120°.

[0010] As another optimization scheme of the above-mentioned temperature measuring device of the main furnace chamber of the heavily-doped single crystal furnace: the dust blowing cylinder includes a connecting part and a dust-free part which are coaxially arranged, the connecting part is fixedly connected to the outer wall of the main furnace chamber, the glass is sealedly connected to one end of the dust-free part away from the main furnace chamber, the air inlet pipe is arranged in the dust-free part and the air outlet of the air inlet pipe is located in the connecting part.

[0011] As another optimization scheme of the above-mentioned temperature measuring device for the main furnace chamber of a heavily-doped single crystal furnace: a fixing ring is arranged around the outer wall of the connecting portion close to the end of the main furnace chamber, and the fixing ring is fixedly connected to the outer wall of the main furnace chamber.

[0012] As another optimization scheme of the above-mentioned temperature measuring device for the main furnace chamber of a heavily-doped single crystal furnace: a molecular sieve is coaxially arranged in the connecting part, and the molecular sieve is provided with through holes for the laser beam of the thermometer to pass through and air holes corresponding to the air inlet and outlet of the air inlet pipe.

[0013] As another optimization scheme of the above-mentioned temperature measuring device for the main furnace chamber of the heavily-doped single crystal furnace: a base fixedly connected to the end of the dust blowing tube away from the main furnace chamber is provided for installing a temperature measuring instrument.

[0014] Compared with the prior art, the utility model has the following beneficial effects:

[0015] 1. The utility model provides a temperature measuring device for the main furnace chamber of a heavily-doped single crystal furnace. A dust blower is arranged between the glass and the main furnace chamber. An air inlet pipe is arranged on the dust blower. The air inlet pipe blows air toward the inner cavity of the main furnace chamber to inhibit impurities from entering the dust blower through the temperature measuring hole, thereby preventing impurities from gathering at the temperature measuring hole and the glass, thereby improving the accuracy of the temperature in the main furnace chamber measured by the thermometer and ensuring the stable growth of the heavily-doped single crystal. There is a distance between the air outlet of the air inlet pipe and the center line of the temperature measuring hole to prevent the air inlet pipe from interfering with the thermometer signal.

[0016] 2. In the utility model, a molecular sieve is provided at the connection part to further prevent impurity gas from entering the inner cavity of the dust-free part; the perforation setting prevents the molecular sieve from interfering with the temperature measuring instrument signal, and the air hole setting ensures that the gas blown out of the air inlet pipe works efficiently. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a structural schematic diagram of the utility model;

[0018] Figure numerals: 1. main furnace chamber, 101. temperature measuring hole, 102. annular boss, 2. dust blower, 201. connecting part, 202. first sealing ring, 203. dust-free part, 3. thermometer, 301. base, 4. molecular sieve, 401. air hole, 402. perforation, 5. air inlet pipe, 6. glass, 7. second sealing ring. DETAILED DESCRIPTION

[0019] The technical solution of the present invention is further elaborated in detail below in conjunction with specific embodiments. The parts that are not described and disclosed in detail in the following embodiments of the present invention should be understood as the existing technologies known or should be known to those skilled in the art, such as the structure of the gas supply device, the connection method between the gas supply device and the air inlet pipe 5, how the thermometer 3 measures the temperature in the main furnace chamber 1, etc.

[0020] Example 1

[0021] A temperature measuring device for the main furnace chamber 1 of a heavily doped single crystal furnace, wherein the side wall of the main furnace chamber 1 is provided with a temperature measuring hole 101, and the number of the temperature measuring hole 101 is one. In this embodiment, the temperature measuring hole 101 is a circular hole structure, and its axis is perpendicular to the axis of the main furnace chamber 1. The temperature measuring device is arranged outside the main furnace chamber 1 and located at the temperature measuring hole 101, and the temperature measuring device comprises a glass 6 and a thermometer 3 for detecting the temperature in the main furnace chamber 1, and the glass 6 is a double-sided transparent high-purity glass 6, and the glass 6 is located between the thermometer 3 and the main furnace chamber 1, and the laser beam of the thermometer 3 coincides with the center line of the temperature measuring hole 101, and a dust blowing cylinder 2 with openings at both ends and coaxial with the temperature measuring hole 101 is arranged between the glass 6 and the outer wall of the main furnace chamber 1, and one end of the dust blowing cylinder 2 is sealed and connected to the outer wall of the furnace body, and the other end of the dust blowing cylinder 2 is sealed and connected to the glass 6, and the dust blowing cylinder 2, the glass 6 and the thermometer 3 are arranged in sequence on the outer wall of the main furnace chamber 1.

[0022] Specifically, the dust-blowing cylinder 2 includes a coaxially arranged connection portion 201 and a dust-free portion 203, both of which are circular cylindrical structures, and the diameter of the connection portion 201 is equal to the diameter of the temperature measuring hole 101. The connection mode of the connection portion 201 and the dust-free portion 203 can be welding or integral connection. In this embodiment, the connection mode of the two is integral connection. The connection portion 201 is fixedly connected to the outer wall of the main furnace chamber 1, and the glass 6 is sealed and connected to one end of the dust-free portion 203 away from the main furnace chamber 1. The specific connection mode is: the outer wall of the main furnace chamber 1 surrounds the temperature measuring hole 101 and has an annular boss 102 extending toward the outside of the main furnace chamber 1, the inner diameter of the annular boss 102 is the diameter of the temperature measuring hole 101, and the annular boss 102 is integrally connected to the outer wall of the main furnace chamber 1; the dust-blowing cylinder 2 is fixedly connected to the annular boss 102, that is, the end of the connection portion 201 is fixedly connected to the annular boss 102. A fixing ring is provided on the outer wall of the connection part 201 , and the fixing ring is integrally connected to the outer wall of the connection part 201 . The outer diameter of the fixing ring is equal to the outer diameter of the annular boss 102 . The fixing ring is connected to the annular boss 102 by bolt connection.

[0023] A first sealing ring 202 is provided between the annular boss 102 and the dust blowing tube 2, that is, the first sealing ring 202 is located between the annular boss 102 and the fixing ring, to ensure the sealing between the annular boss 102 and the fixing ring, and to prevent the gas in the main furnace chamber 1 from flowing out from the connection between the annular boss 102 and the fixing ring. The glass 6 is connected to the right end face of the dust-free part 203, and the glass 6 is embedded and can block the opening of the dust-free part 203 to ensure the airtightness of the main furnace chamber 1. In this embodiment, the thermometer 3 is installed on the base 301, and the base 301 is fixedly connected to the end face of the dust-free part 203, and the connection method between the two is bolted connection. A second sealing ring 7 is provided between the base 301 and the dust-free part 203 to ensure the airtightness of the main furnace chamber 1.

[0024] The side wall of the dust blowing cylinder 2 is provided with an air inlet pipe 5 for blowing air toward the main furnace chamber 1. The air outlet of the air inlet pipe 5 is located in the dust blowing cylinder 2 and is spaced from the center line of the temperature measuring hole 101. The air inlet pipe 5 is arranged in the dust-free part 203 and the air outlet of the air inlet pipe 5 is located in the connecting part 201. Specifically, the air inlet pipe 5 is a circular tubular structure, and the air inlet pipe 5 includes a vertical part, one end of the vertical part extends out of the dust blowing cylinder 2, and the other end of the vertical part extends into the inner cavity of the dust blowing cylinder 2 and is bent toward the main furnace chamber 1 to form a bent part. The axis of the vertical part is perpendicular to the axial direction of the dust-free part 203, that is, a through hole is opened on the side wall of the dust-free part 203, the axis of the through hole is perpendicular to the axis of the dust-free part 203, and the outer wall of the vertical part is sealed and connected to the side wall of the through hole. The angle between the extension direction of the bent portion and the extension direction of the vertical portion is 90-120°. In the present embodiment, the angle between the bent portion and the vertical portion is 90°. The air inlet pipe 5 is externally connected to a gas supply device for providing argon gas. Argon gas enters the connecting portion 201 through the air inlet pipe 5, thereby suppressing volatile substances from entering the inner cavity of the dust-free portion 203, thereby preventing volatile substances or impurities from accumulating inside the glass 6.

[0025] In this embodiment, the bent portion of the air inlet pipe 5 is not located at the axial position of the dust-free portion 203 to avoid interference with the signal of the temperature measuring device 3 .

[0026] The above is a basic implementation method of the utility model, which can be further improved, optimized and limited on the basis of the above to obtain the following embodiments:

[0027] Example 2

[0028] The present embodiment is an improved scheme for the temperature measuring device of the main furnace chamber 1 of a heavily-doped single crystal furnace made on the basis of the embodiment 1. Its main structure is the same as that of the embodiment 1, and the improvements are as follows: the inner diameter of the connecting part 201 is equal to the diameter of the temperature measuring hole 101, the inner diameter of the dust-free part 203 is larger than the diameter of the temperature measuring hole 101, and the length of the connecting part 201 is half of the length of the dust-free part 203, and the wall thickness of the connecting part 201 is half of the wall thickness of the dust-free part 203. If a small amount of impurities or volatiles flow out from the temperature measuring hole 101, they can be deposited in the dust-free part 203, further avoiding deposition on the glass 6.

[0029] Example 3

[0030] This embodiment is an improved solution for the temperature measuring device of the main furnace chamber 1 of a heavily doped single crystal furnace made on the basis of the embodiment 1. Its main structure is the same as that of the embodiment 1, and the improvement lies in that: a molecular sieve 4 is coaxially arranged in the connecting part 201, the diameter of the molecular sieve 4 is equal to the inner diameter of the connecting part 201, and the molecular sieve 4 is fixedly connected to the inner wall of the connecting part 201, so as to further prevent impurities or volatiles from entering the dust-free part 203. The molecular sieve 4 is provided with a through hole 402 for the laser beam of the thermometer 3 to pass through and an air hole 401 corresponding to the air outlet of the air inlet pipe 5. The setting of the through hole 402 avoids the transmission of the optical signal of the dry gas thermometer 3; the setting of the air hole 401 ensures the efficient operation of the argon gas.

[0031] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A temperature measuring device for a main furnace chamber of a heavily doped single crystal furnace, wherein a temperature measuring hole (101) is provided on a side wall of the main furnace chamber (1), the temperature measuring device is arranged outside the main furnace chamber (1) and located at the temperature measuring hole (101), the temperature measuring device comprises a glass (6) and a temperature measuring instrument (3) for detecting the temperature in the main furnace chamber (1), the glass (6) is located between the temperature measuring instrument (3) and the main furnace chamber (1), the laser beam of the temperature measuring instrument (3) coincides with the center line of the temperature measuring hole (101), and the characteristics are: A dust blowing cylinder (2) with openings at both ends is arranged between the glass (6) and the outer wall of the main furnace chamber (1); one end of the dust blowing cylinder (2) is sealedly connected to the outer wall of the furnace body, and the other end of the dust blowing cylinder (2) is sealedly connected to the glass (6); an air inlet pipe (5) for blowing air toward the main furnace chamber (1) is arranged on the side wall of the dust blowing cylinder (2); an air outlet of the air inlet pipe (5) is located in the dust blowing cylinder (2) and is spaced apart from the center line of the temperature measuring hole (101).

2. A temperature measuring device for a main furnace chamber of a heavily doped single crystal furnace as claimed in claim 1, characterized in that: The outer wall of the main furnace chamber (1) is provided with an annular boss (102) surrounding the temperature measuring hole (101) and extending toward the outside of the main furnace chamber (1), and the dust blowing cylinder (2) is fixedly connected to the annular boss (102).

3. A temperature measuring device for a main furnace chamber of a heavily doped single crystal furnace as claimed in claim 2, characterized in that: A first sealing ring (202) is provided between the annular boss (102) and the dust blowing cylinder (2).

4. A temperature measuring device for a main furnace chamber of a heavily doped single crystal furnace as claimed in claim 1, characterized in that: The air inlet pipe (5) comprises a vertical portion, one end of which extends out of the dust blowing cylinder (2), and the other end of which extends into the inner cavity of the dust blowing cylinder (2) and is bent toward the main furnace chamber (1) to form a bent portion.

5. A temperature measuring device for a main furnace chamber of a heavily doped single crystal furnace as claimed in claim 4, characterized in that: The included angle between the extending direction of the bending portion and the extending direction of the vertical portion is 90-120°.

6. A temperature measuring device for a main furnace chamber of a heavily doped single crystal furnace as claimed in claim 1, characterized in that: The dust blowing cylinder (2) comprises a connecting portion (201) and a dust-free portion (203) which are coaxially arranged, the connecting portion (201) being fixedly connected to the outer wall of the main furnace chamber (1), the glass (6) being sealedly connected to an end of the dust-free portion (203) away from the main furnace chamber (1), the air inlet pipe (5) being arranged in the dust-free portion (203) and the air outlet of the air inlet pipe (5) being located in the connecting portion (201).

7. A temperature measuring device for a main furnace chamber of a heavily doped single crystal furnace as claimed in claim 6, characterized in that: The inner diameter of the connecting portion (201) is equal to the diameter of the temperature measuring hole (101), and the inner diameter of the dust-free portion (203) is greater than the diameter of the temperature measuring hole (101).

8. A temperature measuring device for a main furnace chamber of a heavily doped single crystal furnace as claimed in claim 6, characterized in that: A fixing ring is arranged around the connecting portion (201) and on the outer side wall close to the end of the main furnace chamber (1), and the fixing ring is fixedly connected to the outer side wall of the main furnace chamber (1).

9. A temperature measuring device for a main furnace chamber of a heavily doped single crystal furnace as claimed in claim 6, characterized in that: A molecular sieve (4) is coaxially arranged in the connecting portion (201), and the molecular sieve (4) is provided with a through hole (402) through which the laser beam of the temperature measuring instrument (3) can pass, and an air hole (401) corresponding to the air outlet of the air inlet pipe (5).

10. The temperature measuring device for the main furnace chamber of a heavily doped single crystal furnace according to claim 1, characterized in that: The dust blowing cylinder (2) is provided with a base (301) fixedly connected to the end away from the main furnace chamber (1) for mounting a temperature measuring instrument (3).

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