Double-sided heat dissipation packaging device
By adopting a double-sided heat dissipation design in the module packaging devices and using the combination of conductive dielectric and conductive heat dissipation parts, the problems of poor heat dissipation and high cost in the prior art are solved, efficient double-sided heat dissipation is achieved, and product yield and market competitiveness are improved.
Patent Information
- Application Number
- CN202421436172.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-21
- Publication Date
- 2025-04-04
- Estimated Expiration
- 2034-06-21
AI Technical Summary
The existing module package heat dissipation structure mainly relies on one side of the product for heat dissipation, resulting in a lack of effective heat dissipation solutions on the other side, resulting in poor chip temperature transfer, low yield, high cost, and difficult to realize board removal operations in series and parallel structures.
A packaged device design adopts a double-sided heat dissipation device, in which at least one chip is mounted on the pins of the carrier plate by a conductive dielectric, and the conductive heat dissipation member is mounted on the back of the chip through a conductive dielectric, and does not come into contact with the pins on the carrier plate. The upper surface of the conductive heat dissipation is exposed outside the plastic sealing body, forming a surface metal layer to achieve dual-channel heat dissipation.
The double-sided heat dissipation of the chip is realized, the heat dissipation efficiency is improved, the risk of creepage and high voltage/high current crosstalk is avoided, the product cost is reduced, and the market competitiveness is improved.
Smart Images
Figure CN222720422U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of integrated circuit manufacturing, in particular to a double-sided heat dissipation packaging device. Background Art
[0002] With the development of industrial digitalization and intelligence, especially the development of new energy, the arrival of the era of new energy revolution will bring unprecedented development opportunities to the development of IGBT functional chip industry. For example, in energy conservation and emission reduction, in the field of clean energy, IGBT functional chips have brought broad development space. For example, in industrial intelligence, factory production, and digital production, all of these are controlled by the precise positioning of circuits, voltages, and currents, and these are all the credit of IGBT functional chips. IGBT functional chips of power devices are everywhere in daily necessities, such as air conditioners and ovens, which are everywhere at any time. So no matter from which angle you look at it, the future of IGBT functional chips is very broad and has a very bright development prospect.
[0003] At the same time, due to technological innovation, the three-and-a-half-generation products are constantly innovating and iterating, and silicon carbide power modules are currently the key development direction of large global power electronic device companies. Silicon carbide power modules have been initially applied in some high-end fields, including high-power density power conversion, high-performance motor drives, etc., and have broad application prospects and market potential. From 2017 to 2027, the global silicon carbide market size will grow from US$1.09 billion to US$6.297 billion, with a compound annual growth rate of 34%. Among them, the silicon carbide market size has grown from US$685 million to US$4.986 billion, with an annual compound growth rate of up to 39.2%. Electric vehicles (inverter + OBC + DC-DC) are the largest downstream application of silicon carbide, accounting for 62.8% to 79.2%, and the market share continues to rise.
[0004] Regardless of the characteristics of IGBT functional chips or / SiC power module packaging materials: they need to meet the development needs of high frequency and high speed, high voltage and large current, high temperature, high heat dissipation and high reliability, especially to solve the problem of high heat dissipation. At present, there are cooling systems to assist module heat dissipation, but because the heat dissipation currently mainly relies on one side of the product, there is currently no effective heat dissipation solution on the other side of the product, and this problem needs to be solved.
[0005] The current mainstream module packaging heat dissipation structure implementation solutions and electrical connection solutions in the industry are mainly as follows:
[0006] The copper-clad ceramic plate at the bottom of the module and the heat dissipation base plate are used as the main heat dissipation channel, and the electrical terminal output / chip top silicone and air transmission are used as auxiliary heat dissipation channels;
[0007] Adopt a multi-chip series or partial series structure to achieve the connection of active and passive devices such as different diode / transistor function chips;
[0008] The above structure has the following deficiencies:
[0009] The chip's working heat area is mainly in the design circuit layer, and the overall heat dissipation channel is on the upper layer of the chip, not the bottom of the chip. In order to effectively and quickly dissipate heat when the chip is working, there are the following problems and challenges:
[0010] 1. The chip thickness needs to be as thin as possible so that the heat can be transferred to the back of the chip through the silicon base or SIC base, which increases the technical difficulty and process cost of the industry, resulting in low yield and increased equipment investment costs.
[0011] 2. The bottom of the chip must be made of high thermal conductivity solder or sintered silver and other high thermal conductivity materials to quickly transfer the heat from the back of the chip to the copper-clad ceramic plate underneath (the ceramic plate needs to be combined with the chip heat requirements and select processes with different thermal conductivity coefficients, such as DBC / AMB, which needs to be doped with high thermal conductivity metals such as zirconium oxide, etc.), resulting in an increase in the cost of special materials;
[0012] 3. A metal heat sink needs to be selectively added to the bottom of the chip to remove the internal heat to the outside of the product, which results in the need to add an additional high-cost heat sink.
[0013] As for the existing chip connection relationship, because the main body adopts a series or partial series structure, there is a problem of low quality yield or the product cannot be reworked and repaired if one is damaged, resulting in low overall product yield, as well as increased product costs and market prices, and reduced market competitiveness. Utility Model Content
[0014] In view of the current technical barriers such as low module packaging yield, high overall cost, poor heat dissipation transfer channel, and poor stress effect, the existing structure cannot effectively improve the temperature transfer of the chip itself, and the chip series-parallel or partial series-parallel structure cannot achieve board disassembly operations. In view of the above shortcomings, it is impossible to well cover the market application of silicon carbide / IGBT functional chips / gallium nitride and other chips in the entire module market.
[0015] The purpose of this utility model patent is to provide a double-sided heat dissipation package device, including a package body, a carrier board, at least one chip and a conductive heat dissipation member;
[0016] At least one of the chips is mounted on the pins of the carrier board by flip-flopping through a conductive medium;
[0017] The conductive heat sink is mounted on the back of all the chips through a conductive medium, and the conductive heat sink does not contact the pins on the carrier board;
[0018] The upper surface of the conductive heat sink is exposed outside the plastic package.
[0019] Preferably, the upper surface of the conductive heat sink is completely exposed outside the plastic package.
[0020] Preferably, a portion of the upper surface of the conductive heat sink exposed to the plastic packaging body is provided with a surface metal layer, and the surface metal layer extends to the upper surface of the plastic packaging layer.
[0021] Furthermore, the surface metal layer completely covers the upper surface of the plastic package body.
[0022] Optionally, when the number of the chips=1, the chip is a triode function chip, a MOS tube function chip or an IGBT function chip.
[0023] Optionally, when the number of the chips is ≥2, among all the chips, at least one is a triode function chip, a MOS tube function chip or an IGBT function chip.
[0024] Compared with the prior art, the double-sided heat dissipation packaging device of the utility model has the following advantages:
[0025] (1) The portion of the package body exposed on the upper surface of the conductive heat sink is metallized to form a surface metal layer. Under high current conditions, the utility model can achieve dual-channel heat dissipation, greatly improving the situation where the product fails due to heat;
[0026] (2) Since the conductive heat sink does not contact the pins on the carrier board, the risk of creepage and the risk of high voltage / high current crosstalk are effectively avoided;
[0027] (3) Taking the triode functional chip as an example, the polarity of the packaged device is as follows: the chip is mounted in reverse, so the G pole and S pole are at the bottom of the device, and heat can also be dissipated through an external heat dissipation device at the bottom; the D pole is at the top of the device, and heat can also be dissipated through the upper part, realizing the function of double-sided heat dissipation of the product. BRIEF DESCRIPTION OF THE DRAWINGS
[0028] Figure 1 A schematic diagram of a double-sided heat dissipation packaging device of this embodiment 1 Figure 1 ;
[0029] Figure 2 A schematic diagram of a double-sided heat dissipation packaging device of this embodiment 1 Figure 2 ;
[0030] Figure 3 A schematic diagram of a double-sided heat dissipation packaging device obtained by cutting in this embodiment;
[0031] Figure 4 This is a schematic diagram of a double-sided heat dissipation packaging device of the second embodiment. DETAILED DESCRIPTION
[0032] The specific implementation of the utility model patent is further described in detail below in conjunction with the accompanying drawings.
[0033] Example 1
[0034] In this embodiment, two chips are taken as an example (a transistor function chip and a diode)
[0035] like Figure 1 As shown, a double-sided heat dissipation package device includes a package body 1, a carrier board, a triode function chip 2, a diode 3 and a conductive heat dissipation member 4;
[0036] The transistor function chip 2 and the diode 3 are respectively mounted on the pins 5 of the carrier board by flip-flopping through a conductive medium;
[0037] The conductive heat sink 4 is mounted on the back of the diode and transistor function chip through a conductive medium, and the conductive heat sink 4 does not contact the pins on the carrier board;
[0038] The upper surface of the conductive heat sink 4 is exposed outside the plastic package body 1 .
[0039] In this embodiment, the upper surface of the conductive heat sink 4 is completely exposed outside the plastic package body 1, which effectively increases the heat dissipation area.
[0040] In this embodiment, a surface metal layer 5 is provided on the portion of the upper surface of the conductive heat sink 4 exposed to the plastic packaging body 1 , and the surface metal layer 5 extends to the upper surface of the plastic packaging layer 1 .
[0041] Furthermore, in this embodiment, if Figure 2 As shown, the surface metal layer 5 completely covers the upper surface of the plastic package body 1.
[0042] The triode function chip in this embodiment can also be replaced by a MOS tube function chip or an IGBT function chip.
[0043] like Figure 2 As shown, the package carrier does not have a D pole: the D pole is led out through the ceramic copper-clad board mainly for backup detection. The packaged device is a good product obtained after testing, and there is no need to set a detection point, so the D pole can be omitted in the design of the plastic package device. G, S, D polarity and heat dissipation channel description: The chip is a flip-up chip, so the G pole and S pole are at the bottom of the device, and the heat can also be dissipated through the external heat sink at the bottom; the D pole is at the top of the device, and the heat can also be dissipated through the upper part, realizing the function of double-sided heat dissipation of the product.
[0044] In addition, Figure 3As shown, the function of the package substrate electrode D is: during the processing and preparation of the package device, the three electrodes at the bottom are led out for electroplating of the upper and lower exposed metals, so that the package substrate metal and metal conductive components can be protected by metallized materials to prevent oxidation. G, S, D polarity and heat dissipation channel description: After the surface metallization treatment is completed, the product D pole is removed by cutting, and the polarity of the package device is as follows: the chip is flipped, so the G pole and S pole are at the bottom of the device, and the heat can also be dissipated through the external heat sink at the bottom; the D pole is at the top of the device, and the heat can also be dissipated through the upper part, realizing the function of double-sided heat dissipation of the product.
[0045] Electrode lead-out: The D pole is on the upper surface of the device, and the upper surface is metal. The electrode can be led out using a conductive medium, or a metal conductive component can be used to connect the packaged device to the electrode and then lead out the terminal to achieve short and fast functions; the G and S poles can use a conductive medium to lead out the relevant polarities on the external substrate (usually a ceramic copper-clad board).
[0046] Example 2
[0047] In addition, the chip in the packaged device can also be one, taking the transistor function chip as an example, Figure 4 shown.
[0048] The preferred embodiments of the present invention have been specifically described above, but the present invention is not limited to the described embodiments. Those skilled in the art may make various equivalent modifications or substitutions without violating the spirit of the present invention, and these equivalent modifications or substitutions are all within the scope defined by the claims of this application.
Claims
1. A double-sided heat dissipation packaging device, comprising a plastic package, characterized in that: Also includes a carrier board, at least one chip and a conductive heat sink; At least one of the chips is respectively mounted on the pins of the carrier board by flip-flopping through a conductive medium; The conductive heat sink is mounted on the back of all the chips through a conductive medium, and the conductive heat sink does not contact the pins on the carrier board; The upper surface of the conductive heat sink is exposed outside the plastic package.
2. A double-sided heat dissipation packaging device as claimed in claim 1, characterized in that: The upper surface of the conductive heat sink is completely exposed outside the plastic package.
3. A double-sided heat dissipation packaging device as claimed in claim 1 or 2, characterized in that: A surface metal layer is provided on the portion of the upper surface of the conductive heat sink exposed to the plastic packaging body, and the surface metal layer extends to the upper surface of the plastic packaging layer.
4. A double-sided heat dissipation packaging device as claimed in claim 3, characterized in that: The surface metal layer completely covers the upper surface of the plastic package body.
5. A double-sided heat dissipation packaging device as claimed in claim 1, characterized in that: When the number of the chips=1, the chip is a triode function chip, a MOS tube function chip or an IGBT function chip.
6. A double-sided heat dissipation package device as claimed in claim 1, characterized in that: When the number of the chips is ≥2, among all the chips, at least one is a triode function chip, a MOS tube function chip or an IGBT function chip.