Heating device and growth system
By designing a heating device arranged in parallel with multiple heating rings, the temperature gradient adjustment of the single crystal furnace is realized, which solves the problem that the heating device in the prior art cannot adjust the temperature gradient and improves the reliability of single crystal growth.
Patent Information
- Application Number
- CN202421375960.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-14
- Publication Date
- 2025-04-08
- Estimated Expiration
- 2034-06-14
AI Technical Summary
In the prior art, the heating device of the growth system cannot adjust the temperature gradient, which affects the reliability of single crystal growth.
A heating device is designed, including a plurality of heating rings, arranged at the axial interval of the single crystal furnace, and electrically connected to the electrodes, so as to realize independent control of each heating ring.
By independently controlling the heating power of each heating ring, the temperature gradient adjustment of the single crystal furnace is achieved, ensuring the reliability of single crystal growth and the uniformity of temperature distribution.
Smart Images
Figure CN222729952U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of crystal growth equipment, in particular to a heating device and a growth system. Background Art
[0002] In the prior art, the heating method of the heating device of the growth system is relatively simple, resulting in the temperature distribution of the growth system being determined only by the thermal field design. The temperature gradient during the single crystal growth process cannot be adjusted, and the growth reliability of the single crystal cannot be ensured. Utility Model Content
[0003] The main purpose of the utility model is to provide a heating device and a growth system to solve the problem that the heating device of the growth system in the prior art cannot achieve temperature gradient regulation.
[0004] In order to achieve the above-mentioned purpose, according to one aspect of the utility model, a heating device is provided for heating a material to be heated in a single crystal furnace, the heating device comprising a plurality of heating rings, the plurality of heating rings being used to be sleeved on the outer peripheral side of the single crystal furnace, and the plurality of heating rings being arranged at intervals along the axial direction of the single crystal furnace; wherein each heating ring is electrically connected to a group of electrodes so that the plurality of heating rings are arranged in parallel and independent control of each heating ring is achieved.
[0005] Furthermore, the heating power of each heating ring is equal; or, the heating power of each heating ring is distributed in a linear gradient.
[0006] Furthermore, a plurality of heating rings are concentrically arranged.
[0007] Furthermore, the projections of the inner ring contour lines of each heating ring on the axial direction of the heating ring overlap; and / or the projections of the outer ring contour lines of each heating ring on the axial direction of the heating ring overlap.
[0008] Furthermore, the spacing distance between two adjacent heating rings among the multiple heating rings is equal.
[0009] Furthermore, the spacing distance between two adjacent heating rings among the plurality of heating rings is arranged to gradually increase.
[0010] Furthermore, the positive electrode and the negative electrode in the same group of electrodes are respectively arranged on the outer peripheral side of the heating ring.
[0011] Furthermore, in the same group of electrodes, the line connecting the positive electrode and the negative electrode passes through the geometric center of the heating ring.
[0012] Furthermore, the connection lines between the positive electrodes and the negative electrodes in each group of electrodes pass through the geometric center of the corresponding heating ring, and the connection lines between the positive electrodes and the negative electrodes in each group of electrodes overlap.
[0013] According to another aspect of the utility model, a growth system is provided, including a single crystal furnace and a heating device, wherein the single crystal furnace is used to place the material to be heated; multiple heating rings of the heating device are all sleeved on the outer peripheral side of the single crystal furnace, and the heating device is the above-mentioned heating device.
[0014] By applying the technical solution of the utility model, a heating device with multiple heating rings is provided. At the same time, the multiple heating rings are used to be sleeved on the outer peripheral side of the single crystal furnace, and the multiple heating rings are arranged at intervals along the axial direction of the single crystal furnace; each heating ring is electrically connected to a group of electrodes, so that the multiple heating rings are arranged in parallel, and then independent control of each heating ring is achieved. In this way, the purpose of adjusting the temperature gradient of the single crystal furnace is achieved by independently controlling each heating ring. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] The drawings constituting part of the present application are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation on the present invention. In the drawings:
[0016] Figure 1 A schematic diagram of the three-dimensional structure of a heating device according to an optional embodiment of the utility model is shown;
[0017] Figure 2 Shows Figure 1 A schematic diagram of the structure of the heating device in the top view;
[0018] Figure 3 Shows Figure 1 A schematic structural diagram of a heating device from a main viewing angle;
[0019] Figure 4 Shows Figure 1 A schematic structural diagram of a heating device from a side view.
[0020] The above drawings include the following reference numerals:
[0021] 1. Heating device; 10. Heating ring; 20. Electrode; 21. Positive electrode; 22. Negative electrode. DETAILED DESCRIPTION
[0022] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is by no means a limitation on the utility model and its application or use. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0023] In order to solve the problem that the heating device of the growth system in the prior art cannot achieve temperature gradient adjustment, the utility model provides a heating device and a growth system, wherein the growth system includes a single crystal furnace and a heating device 1, wherein the single crystal furnace is used to place the material to be heated; the multiple heating rings 10 of the heating device 1 are all sleeved on the outer peripheral side of the single crystal furnace, and the heating device 1 is the above-mentioned and the following heating device.
[0024] like Figures 1 to 4 As shown, the heating device is used to heat the material to be heated in the single crystal furnace, and the heating device includes a plurality of heating rings 10, and the plurality of heating rings 10 are used to be sleeved on the outer peripheral side of the single crystal furnace, and the plurality of heating rings 10 are arranged at intervals along the axial direction of the single crystal furnace; wherein each heating ring 10 is electrically connected to a group of electrodes 20, so that the plurality of heating rings 10 are arranged in parallel, and independent control of each heating ring 10 is realized.
[0025] By applying the technical solution of the utility model, a heating device 1 with a plurality of heating rings 10 is provided. At the same time, the plurality of heating rings 10 are used to be sleeved on the outer peripheral side of the single crystal furnace, and the plurality of heating rings 10 are arranged at intervals along the axial direction of the single crystal furnace; each heating ring 10 is electrically connected to a group of electrodes 20, so that the plurality of heating rings 10 are arranged in parallel, thereby realizing independent control of each heating ring 10. In this way, the purpose of adjusting the temperature gradient of the single crystal furnace is achieved by independently controlling each heating ring 10.
[0026] It should be noted that, in the present application, the heating power of each heating ring 10 is equal; or, the heating power of each heating ring 10 is distributed in a linear gradient. In this way, the current passing through each heating ring 10 is independently controlled, so as to control the heating power of each heating ring 10, and the heating power of each heating ring 10 can be controlled to be equal, or the heating power of the heating ring 10 can be controlled to be distributed in a linear gradient.
[0027] It should be noted that in the present application, the heating device provided in the present application adjusts the heating power by adjusting the current of each heating ring 10 while ensuring that the total heating power of the growth system does not change, thereby changing the temperature field distribution of the growth system, and achieving the purpose of still being able to control the temperature gradient of the material to be heated (melt) after the thermal field is designed and installed. In addition, through the different distribution methods of the heating power of each heating ring 10, it is ensured that the heating device provided in the present application can be applicable to scenarios of thermal field temperature gradients in different process flows.
[0028] like Figure 2 As shown, a plurality of heating rings 10 are concentrically arranged. In this way, the uniformity of the spacing distance between each heating ring 10 and the single crystal furnace is ensured, thereby ensuring the uniformity of heating of the material to be heated in the single crystal furnace by each heating ring 10.
[0029] Furthermore, the projections of the inner ring contours of each heating ring 10 in the axial direction of the heating ring 10 overlap; and / or the projections of the outer ring contours of each heating ring 10 in the axial direction of the heating ring 10 overlap. In this way, the overall outer contours of each heating ring 10 are ensured to be consistent, and the mass production of the heating ring 10 can be achieved, thereby ensuring the convenience of processing and manufacturing of the heating device, which is conducive to reducing the economic cost of the heating device.
[0030] like Figure 1 and Figure 3 As shown, the spacing distance between two adjacent heating rings 10 in the plurality of heating rings 10 is equal. In this way, it is ensured that the heating rings 10 can be evenly distributed in the axial direction of the single crystal furnace, thereby achieving heating reliability for the material to be heated in the single crystal furnace.
[0031] It should be noted that, in an embodiment of the present application which is not shown in the figure, the interval distance between two adjacent heating rings 10 among the plurality of heating rings 10 is arranged to gradually increase.
[0032] like Figures 1 to 4 As shown, the positive electrode 21 and the negative electrode 22 in the same group of electrodes 20 are respectively arranged on the outer peripheral side of the heating ring 10. In this way, the positive electrode 21 and the negative electrode 22 in the electrode 20 are prevented from interfering with the single crystal furnace, ensuring the reliability of the heating ring 10 being sleeved on the outer peripheral side of the single crystal furnace.
[0033] like Figure 2 As shown, in the same group of electrodes 20, the connecting line of the positive electrode 21 and the negative electrode 22 passes through the geometric center of the heating ring 10. In this way, the overall structural compactness of the heating device 1 is ensured, and the overall structural symmetry of the heating device 1 is ensured.
[0034] like Figure 2 and Figure 3As shown, the connecting line of the positive electrode 21 and the negative electrode 22 in each group of electrodes 20 passes through the geometric center of the corresponding heating ring 10, and the connecting line of the positive electrode 21 and the negative electrode 22 in each group of electrodes 20 overlaps. In this way, the positive electrode 21 and the negative electrode 22 in each group of electrodes 20 are both in the same axial position outside the single crystal furnace, which can avoid other components on the outer peripheral side of the single crystal furnace, and can also ensure the overall compactness of the heating device 1 installed on the single crystal furnace.
[0035] It should be noted that in the re-investment and melting state, the heating power of each layer of heating ring 10 needs to be equal to ensure that the single crystal furnace (crucible) can be heated evenly, which is beneficial to lowering the maximum temperature of the single crystal furnace. Under the premise of ensuring the melting efficiency, the dissolution rate of the single crystal furnace is reduced, which is beneficial to increase the service life of the single crystal furnace and reduce the oxygen content of the crystal rod.
[0036] Furthermore, during the temperature adjustment, crystal induction and crystal pulling processes, the heating power of the heating ring 10 is adjusted so that the heating power of the heating ring 10 is distributed in a linear gradient from top to bottom. Then, the temperature of the single crystal furnace and the temperature distribution of the molten silicon are positively correlated with the heating power of the heating ring 10, and decreases with the decrease in the depth of the molten silicon. Since the higher the temperature, the lower the density of the molten silicon, the melt with higher density is at the top of the single crystal furnace and the melt with lower density is at the bottom of the single crystal furnace. The melt is relatively stable, which is conducive to the growth of crystalline silicon. According to the size of the thermal field, when the melt height in the single crystal furnace is lower than the total height of the heating zone of the single crystal furnace by the heating ring 10, the heating ring 10 outside the molten silicon can be closed, which is conducive to saving energy consumption, thereby reducing the cost of crystal pulling.
[0037] Furthermore, during the preheating process of the crystal rod, only the uppermost heating ring 10 is turned on, which is beneficial to reducing the heating area of the single crystal furnace, thereby reducing the oxygen concentration in the melt and effectively reducing the oxygen content of the crystal rod.
[0038] It should be noted that the heating device provided in the present application can effectively shorten the melting speed by optimizing the distribution of the heating power of the heating ring 10, thereby improving the stability of the melt and further reducing the dissolution rate of the single crystal furnace, thereby achieving the purpose of improving the crystal pulling capacity and crystal rod quality.
[0039] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.
[0040] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values of the parts and steps described in these embodiments do not limit the scope of the utility model. At the same time, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to the actual proportional relationship. The technology, methods and equipment known to ordinary technicians in the relevant field may not be discussed in detail, but in appropriate cases, the technology, methods and equipment should be regarded as a part of the authorization specification. In all examples shown and discussed here, any specific value should be interpreted as merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once a certain item is defined in one drawing, it does not need to be further discussed in subsequent drawings.
[0041] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" may include both "above" and "below". The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.
[0042] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.
[0043] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein.
[0044] The above description is only the preferred embodiment of the utility model, and is not intended to limit the utility model. For those skilled in the art, the utility model can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.
Claims
1. A heating device, characterized in that: Used to heat the material to be heated in the single crystal furnace, the heating device comprises: A plurality of heating rings (10), each of the plurality of heating rings (10) being used to be sleeved on the outer peripheral side of the single crystal furnace, and the plurality of heating rings (10) being arranged at intervals along the axial direction of the single crystal furnace; Each of the heating rings (10) is electrically connected to a group of electrodes (20) so that a plurality of the heating rings (10) are arranged in parallel and independent control of each of the heating rings (10) is achieved.
2. The heating device according to claim 1, characterized in that The heating power of each heating ring (10) is equal; or, The heating power of each heating ring (10) is distributed in a linear gradient.
3. The heating device according to claim 1, characterized in that: A plurality of heating rings (10) are concentrically arranged.
4. The heating device according to claim 1, characterized in that The projections of the inner ring contour lines of each heating ring (10) in the axial direction of the heating ring (10) overlap; and / or, The projections of the outer ring contour lines of each heating ring (10) in the axial direction of the heating ring (10) overlap.
5. The heating device according to claim 1, characterized in that: The spacing distance between two adjacent heating rings (10) among the plurality of heating rings (10) is equal.
6. The heating device according to claim 1, characterized in that: The spacing distance between two adjacent heating rings (10) among the plurality of heating rings (10) is arranged to gradually increase.
7. The heating device according to claim 1, characterized in that: The positive electrode (21) and the negative electrode (22) in the same group of electrodes (20) are respectively arranged on the outer peripheral side of the heating ring (10).
8. The heating device according to claim 7, characterized in that: In the same group of electrodes (20), a line connecting the positive electrode (21) and the negative electrode (22) passes through the geometric center of the heating ring (10).
9. The heating device according to claim 7, characterized in that: The connecting lines of the positive electrode (21) and the negative electrode (22) in each group of electrodes (20) pass through the geometric center of the corresponding heating ring (10), and the connecting lines of the positive electrode (21) and the negative electrode (22) in each group of electrodes (20) overlap.
10. A growth system, characterized in that: include: A single crystal furnace, wherein the single crystal furnace is used to place a substance to be heated; A heating device (1), wherein a plurality of heating rings (10) of the heating device (1) are all sleeved on the outer peripheral side of the single crystal furnace, and the heating device (1) is the heating device according to any one of claims 1 to 9.