Heating device and semiconductor process equipment

Abstract

The utility model discloses a heating device and semiconductor process equipment. The disclosed heating device comprises a first heat preservation part, a second heat preservation part and a heating assembly, the first heat preservation part is a cylindrical structural part, the second heat preservation part is connected with the end of the first heat preservation part to define a heating inner cavity with an opening in one end, the heating assembly comprises a first heating piece and a second heating piece, the first heating piece is arranged on the first heat preservation part, and the second heating piece is arranged on the second heat preservation part. According to the scheme, the problems that the temperature distribution consistency of the reaction chamber is poor and the performance of the semiconductor sheet after the process is influenced due to the fact that heat dissipation of the reaction chamber at the position of the top wall is too fast in the prior art can be solved.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor process equipment, in particular to a heating device and semiconductor process equipment. Background Art

[0002] Various oxidation, annealing and thin film growth processes in the manufacturing process of semiconductor sheets are all carried out at a certain temperature. Therefore, when the semiconductor sheets are processed in the reaction chamber of the semiconductor process equipment, the reaction chamber usually needs to be heated.

[0003] In order to heat the reaction chamber, the related art heats the reaction chamber by placing a heating element around the side wall of the reaction chamber. However, since the top of the reaction chamber has a large contact area with the outside, when the heating element heats the reaction chamber, the temperature of the top of the reaction chamber is lower than that of the middle part, resulting in poor consistency of temperature distribution in the reaction chamber, which affects the performance of the semiconductor sheet. Utility Model Content

[0004] The utility model discloses a heating device and semiconductor process equipment to solve the problem in the related art that the reaction chamber dissipates heat too quickly at the top wall, resulting in poor consistency of temperature distribution in the reaction chamber, which in turn affects the performance of semiconductor sheets after processing.

[0005] In order to solve the above technical problems, the utility model is achieved as follows:

[0006] In a first aspect, the present application discloses a heating device for semiconductor process equipment, the disclosed heating device comprising a first heat preservation part, a second heat preservation part and a heating assembly;

[0007] The first heat-insulating part is a tubular structure, the second heat-insulating part is connected to the end of the first heat-insulating part to enclose a heating inner cavity with one end open, the heating assembly includes a first heating element and a second heating element, the first heating element is arranged in the first heat-insulating part, and the second heating element is arranged in the second heat-insulating part.

[0008] In a second aspect, the present application further discloses a semiconductor process equipment, the disclosed semiconductor process equipment comprises a reaction chamber and the heating device described in the first aspect, the reaction chamber is located in the heating inner cavity.

[0009] The technical solution adopted by the utility model can achieve the following technical effects:

[0010] The heating device disclosed in the embodiment of the present application is configured such that the first heat-insulating part is configured as a tubular structural part, so that the second heat-insulating part is connected to the end of the first heat-insulating part, so that the first heat-insulating part and the second heat-insulating part enclose a heating inner cavity with one end open, so that the reaction chamber of the semiconductor process equipment can be arranged in the heating inner cavity, and the side wall of the reaction chamber can be opposite to the first heat-insulating part, and the top wall of the reaction chamber can be opposite to the second heat-insulating part; by arranging the first heating element in the first heat-insulating part and the second heating element in the second heat-insulating part, when the reaction chamber is arranged in the heating inner cavity, the first heating element can heat the reaction chamber from the side wall of the reaction chamber, and the second heating element can heat the reaction chamber from the top wall of the reaction chamber, so that the top wall and the side wall of the reaction chamber are respectively provided with heating elements for heating, and are respectively insulated by the heat-insulating parts, so that the reaction chamber can avoid excessive heat dissipation at the top wall position, thereby improving the temperature consistency of the top and middle parts of the reaction chamber, and further facilitating the improvement of the performance of the semiconductor sheet after the process. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 A schematic diagram of the structure of a semiconductor process equipment disclosed in an embodiment of the utility model;

[0012] Figure 2 It is a schematic structural diagram of the second heat preservation part disclosed in the embodiment of the utility model;

[0013] Figure 3 A perspective view of a second heat preservation portion disclosed in an embodiment of the utility model;

[0014] Figure 4 It is a perspective view of the exploded second heat-insulating part disclosed in the embodiment of the utility model.

[0015] Description of reference numerals:

[0016] 100-first insulation part, 110-first insulation layer, 111-cooling outlet, 120-second insulation layer, 121-cooling inlet, 130-insulation gap,

[0017] 200-second heat preservation part, 210-exhaust channel, 211-first exhaust section, 212-second exhaust section, 213-third exhaust section, 220-third heat preservation layer, 230-fourth heat preservation layer,

[0018] 300-heating assembly, 310-first heating element, 320-second heating element, 321-heating wire, 322-ceramic sleeve,

[0019] 400-Reaction chamber,

[0020] a-semiconductor sheet, b-wafer boat. DETAILED DESCRIPTION

[0021] In order to make the purpose, technical solution and advantages of the utility model clearer, the technical solution of the utility model will be clearly and completely described below in combination with the specific embodiments of the utility model and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model.

[0022] The technical solutions disclosed in various embodiments of the present utility model are described in detail below in conjunction with the accompanying drawings.

[0023] Please refer to Figures 1 to 4 The embodiment of the utility model discloses a heating device for semiconductor process equipment, which can be used to heat a reaction chamber 400 of the semiconductor process equipment to perform a heat treatment process on a semiconductor sheet a (such as a wafer) in the reaction chamber 400.

[0024] The disclosed heating device includes a first heat-keeping portion 100 , a second heat-keeping portion 200 and a heating assembly 300 .

[0025] The first heat-insulating part 100 is a cylindrical structural member, and the second heat-insulating part 200 is connected to the end of the first heat-insulating part 100 , so that the first heat-insulating part 100 and the second heat-insulating part 200 form a heating inner cavity with one end open.

[0026] The heating assembly 300 includes a first heating element 310 and a second heating element 320 . The first heating element 310 is disposed in the first heat preservation portion 100 , and the second heating element 320 is disposed in the second heat preservation portion 200 .

[0027] It should be noted that the first heat preservation part 100 and the second heat preservation part 200 can be the supporting skeleton of the heating device, which is used to provide a foundation for installing other components of the heating device (such as the first heating element 310, the second heating element 320, etc.), so as to provide a reaction place for the reaction chamber 400 when performing a heat treatment process on the semiconductor sheet a. The first heating element 310 and the second heating element 320 can provide temperature conditions for the reaction chamber 400 when performing a heat treatment process on the semiconductor sheet a.

[0028] The heating device disclosed in the embodiment of the present application is configured such that the first heat preservation part 100 is configured as a cylindrical structure, so that the second heat preservation part 200 is connected to the end of the first heat preservation part 100, so that the first heat preservation part 100 and the second heat preservation part 200 surround a heating inner cavity with an open end, so that the reaction chamber 400 of the semiconductor process equipment can be arranged in the heating inner cavity, and the side wall of the reaction chamber 400 can be opposite to the first heat preservation part 100, and the top wall of the reaction chamber 400 can be opposite to the second heat preservation part 200; by arranging the first heating element 310 in the first heat preservation part 100 and the second heating element 310 in the second heat preservation part 200 Component 320, when the reaction chamber 400 is arranged in the heating inner cavity, the first heating component 310 can heat the reaction chamber 400 from the side wall of the reaction chamber 400, and the second heating component 320 can heat the reaction chamber 400 from the top wall of the reaction chamber 400, so that the top wall and the side wall of the reaction chamber 400 are respectively provided with heating components for heating, and are respectively insulated by the heat insulation part, so as to avoid the reaction chamber 400 from dissipating heat too quickly at the top wall position, thereby improving the temperature consistency of the top and middle parts of the reaction chamber 400, which is beneficial to improving the performance of the semiconductor sheet after the process.

[0029] In order to make the heating device have better heat preservation ability, optionally, the first heat preservation part 100 may include a first heat preservation layer 110 and a second heat preservation layer 120, the second heat preservation layer 120 may be sleeved outside the first heat preservation layer 110, and a heat preservation gap 130 is formed between the second heat preservation layer 120 and the first heat preservation layer 110, and the first heating element 310 may be arranged in the first heat preservation layer 110. The first heat preservation layer 110 and the second heat preservation layer 120 are both cylindrical structures.

[0030] The heating device disclosed in the embodiment of the present application is configured such that the first heat-insulating part 100 includes a first heat-insulating layer 110 and a second heat-insulating layer 120, so that the second heat-insulating layer 120 is sleeved outside the first heat-insulating layer 110, and a heat-insulating gap 130 is formed between the second heat-insulating layer 110, so that heat conduction is carried out between the first heat-insulating layer 110 and the second heat-insulating layer 120 in a non-contact manner, thereby more effectively preventing the loss of temperature, and further improving the heat-insulating capacity of the heating device. Moreover, the structure of sleeve-mounted first heat-insulating layer 110 and second heat-insulating layer 120 is adopted, so that the first heat-insulating part 100 is used as a part of the supporting skeleton, which can improve the supporting strength, and further improve the overall strength of the heating device.

[0031] In order to make the structure of the heating device more compact, optionally, the first heating element 310 can be disposed in the first thermal insulation layer 110 , for example, the first heating element 310 can be embedded in the first thermal insulation layer 110 .

[0032] The heating device disclosed in the embodiment of the present application disposes the first heating element in the first thermal insulation layer 110, so that the first thermal insulation layer 110 can protect the first heating element 310, and is beneficial to the stability of the installation of the first heating element 310 and the compact design of the heating device.

[0033] It should be noted that the first heating element 310 can be disposed in a surrounding manner, so that when the reaction chamber 400 is heated, it can surround the reaction chamber 400 , which is beneficial to the uniformity of heating.

[0034] Of course, the first heating element 310 can also be arranged on the inner wall of the first insulation layer 110 or the outer wall of the first insulation layer 110, or can be arranged in the second insulation layer 120 or in the insulation gap 130 between the first insulation layer 110 and the second insulation layer 120. The embodiment of the present application does not impose any specific restrictions on the setting method of the first heating element 310.

[0035] In order to meet the requirements of semiconductor process equipment for cooling rate during the heat treatment process, optionally, the first insulation part 100 can be provided with an air inlet channel connected to the heating cavity, and the second insulation part 200 can be provided with an exhaust channel 210 connecting the heating cavity with the external environment of the heating device.

[0036] The heating device disclosed in the embodiment of the present application opens an air inlet channel in the first heat preservation part 100 and an exhaust channel 210 in the second heat preservation part 200, so that when the reaction chamber 400 is located in the heating inner cavity, the cooling gas can enter between the outer wall of the reaction chamber 400 and the inner wall of the first heat preservation part 100 from the air inlet channel, so that the cooling gas can cool the reaction chamber 400, and the cooling gas after heat exchange with the reaction chamber 400 can be discharged from the exhaust channel 210, so as to better meet the requirements of the cooling rate when the reaction chamber 400 performs a heat treatment process on the semiconductor sheet a.

[0037] In order to improve the exhaust capacity of the cooling gas, optionally, the second insulation part 200 can be provided with a plurality of exhaust channels 210, the air inlets of the plurality of exhaust channels 210 can be connected to the heating inner cavity, and are arranged at intervals around the central axis of the first insulation part 100, and the air inlets of the plurality of exhaust channels 210 can be arranged along the edge of the connection between the second insulation part 200 and the first insulation part 100.

[0038] It should be noted that the central axis of the first heat-insulating portion 100 refers to the central axis in the extension direction of the cylindrical structure. Figure 1 In the figure, an axis extending in the vertical direction and passing through the center of the first heat-insulating part 100.

[0039] The heating device disclosed in the embodiment of the present application is provided with a plurality of exhaust channels 210 in the second heat preservation part 200, and the air inlets of the plurality of exhaust channels 210 are connected to the heating inner cavity, and are arranged at intervals around the central axis of the first heat preservation part 100, so that the cooling gas between the outer wall of the reaction chamber 400 and the inner wall of the first heat preservation part 100 can be discharged from the plurality of exhaust channels 210, thereby improving the exhaust capacity of the cooling gas. The air inlets of the plurality of exhaust channels 210 are arranged along the edge of the connection between the second heat preservation part 200 and the first heat preservation part 100, so as to avoid the air inlet of the exhaust channel 210 being located at the center of the second heat preservation part 200, so that the cooling gas can be directly diffused upward along the outer wall of the reaction chamber 400 and the inner wall of the first heat preservation part 100, thereby facilitating the improvement of the cooling rate of the reaction chamber 400.

[0040] Optionally, the exhaust passage 210 may include a first exhaust section 211, a second exhaust section 212, and a third exhaust section 213. The first exhaust section 211 and the third exhaust section 213 may both extend in a first direction, the second exhaust section 212 may extend in a second direction, the first port of the first exhaust section 211 may be an air inlet of the exhaust passage 210, the second port of the third exhaust section 213 is in communication with the external environment, and the second exhaust section 212 may be connected between the second port of the first exhaust section 211 and the first port of the third exhaust section 213, wherein the first direction intersects with the second direction.

[0041] The heating device disclosed in the embodiment of the present application is configured such that the exhaust channel 210 is configured to include a first exhaust section 211, a second exhaust section 212 and a third exhaust section 213, wherein the first exhaust section 211 and the third exhaust section 213 both extend in a first direction, and the second exhaust section 212 extends in a second direction, and the first direction intersects with the second direction, thereby forming a bent structure in the exhaust channel 210, which is beneficial for avoiding the second heating element 320.

[0042] When the heating device is used in semiconductor process equipment, especially vertical furnace equipment, the opening surrounded by the first insulation part 100 and the second insulation part 200 is usually facing the vertical downward direction, and the first direction can be parallel to the direction of the opening. By extending the first exhaust section 211 and the third exhaust section 213 along the first direction, the cooling gas can be discharged from the third exhaust section 213 in a vertical upward direction, which is beneficial to reduce exhaust wind loss and increase the cooling rate.

[0043] In order to improve the heat preservation capacity of the second heat preservation part 200, optionally, the second heat preservation part 200 may include a third heat preservation layer 220 and a fourth heat preservation layer 230, and the fourth heat preservation layer 230 may be stacked on the side of the third heat preservation layer 220 away from the heating inner cavity. The second heating element 320 is arranged in the third heat preservation layer 220, the first exhaust section 211 is opened in the third heat preservation layer 220, and the second exhaust section 212 and the third exhaust section 213 are opened in the fourth heat preservation layer 230.

[0044] The heating device disclosed in the embodiment of the present application is configured such that the second insulation part 200 includes a stacked third insulation layer 220 and a fourth insulation layer 230, so that the second heating element 320 is arranged in the third insulation layer 220, so that the third insulation layer 220 can not only realize the insulation function, but also provide a basis for the installation of the second heating element 320. The fourth insulation layer 230 is stacked on the side of the third insulation layer 220 that is away from the heating inner cavity, which can block the heat loss of the second heating element 320, thereby improving the insulation capacity of the second insulation part 200.

[0045] In order to optimize the structure of the heating device, optionally, the first heat-insulating part 100 may include a first heat-insulating layer 110 and a second heat-insulating layer 120, the second heat-insulating layer 120 may be sleeved on the first heat-insulating layer 110, and a heat-insulating gap 130 is formed between the second heat-insulating layer 120 and the first heat-insulating layer 110, and the first heating element 310 is disposed on the first heat-insulating layer 110. The second heat-insulating layer 120 may be provided with a cooling inlet 121 connected to the heat-insulating gap 130, the first heat-insulating layer 110 may be provided with a cooling outlet 111 connected to the heat-insulating gap 130 and the heating inner cavity, and the cooling inlet 121, the heat-insulating gap 130 and the cooling outlet 111 form an air inlet passage.

[0046] The heating device disclosed in the embodiment of the present application uses the insulation gap between the first insulation layer 110 and the second insulation layer 120 as a channel for passing cooling gas, so that the insulation gap can be fully utilized, thereby eliminating the need to set up a separate cooling channel, which is beneficial to the structural optimization of the heating device.

[0047] Optionally, the first heat-insulating layer 110 may be provided with a plurality of cooling outlets 111 arranged in an array, so that the cooling gas can cool the reaction chamber 400 located in the heating cavity more evenly.

[0048] Specifically, the first heating element 310 may be a cylindrical heating body or a strip heating body, the cylindrical heating body may be spirally wound along the first thermal insulation layer 110, and the strip heating body may be arranged at intervals along the first thermal insulation layer 110. The second heating element 320 may include a heating wire 321 and a ceramic sleeve 322, the ceramic sleeve 322 may be inserted into the second thermal insulation part 200, and the heating wire 321 may be wound around the ceramic sleeve 322.

[0049] The present application also discloses a semiconductor process equipment, which includes a reaction chamber 400 and the heating device disclosed in the above embodiment. The reaction chamber 400 is located in a heating cavity.

[0050] The semiconductor process equipment disclosed in the implementation of the present application is provided with the heating device disclosed in the above-mentioned embodiment, so that the top wall and the side wall of the reaction chamber 400 are respectively provided with heating elements for heating, and are respectively insulated by the heat preservation part, so as to avoid the reaction chamber 400 from dissipating heat too quickly at the top wall position, thereby improving the temperature consistency of the top and middle parts of the reaction chamber 400, which is beneficial to improving the performance of the semiconductor sheet after the process.

[0051] Optionally, the semiconductor process equipment may be a vertical furnace, and the heating device may be understood as a furnace body of the vertical furnace, wherein the furnace body is provided with a process tube, and the process tube is sealed by a process door to form a sealed reaction chamber 400 .

[0052] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0053] The embodiments of the utility model are described above in conjunction with the accompanying drawings, but the utility model is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the enlightenment of the utility model, ordinary technicians in this field can also make many forms without departing from the scope of protection of the utility model and the claims, all of which are within the protection of the utility model.

Claims

1. A heating device for semiconductor process equipment, characterized in that: It comprises a first heat preservation part (100), a second heat preservation part (200) and a heating component (300); The first heat-insulating part (100) is a tubular structural part, the second heat-insulating part (200) is connected to the end of the first heat-insulating part (100) to enclose a heating inner cavity with an open end, and the heating component (300) comprises a first heating element (310) and a second heating element (320), the first heating element (310) is arranged on the first heat-insulating part (100), and the second heating element (320) is arranged on the second heat-insulating part (200).

2. The heating device according to claim 1, characterized in that The first thermal insulation part (100) comprises a first thermal insulation layer (110) and a second thermal insulation layer (120); the second thermal insulation layer (120) is sleeved outside the first thermal insulation layer (110) and forms a thermal insulation gap (130) between the second thermal insulation layer (120) and the first thermal insulation layer (110); and the first heating element (310) is disposed in the first thermal insulation layer (110).

3. The heating device according to claim 2, characterized in that: The first heating element (310) is disposed in the first thermal insulation layer (110).

4. The heating device according to claim 1, characterized in that The first heat-insulating portion (100) is provided with an air inlet passage connected to the heating inner cavity, and the second heat-insulating portion (200) is provided with an air exhaust passage (210) connecting the heating inner cavity with the external environment of the heating device.

5. The heating device according to claim 4, characterized in that: The second heat-insulating portion (200) is provided with a plurality of exhaust channels (210), the air inlets of the plurality of exhaust channels (210) being in communication with the heating inner cavity and arranged at intervals around the central axis of the first heat-insulating portion (100).

6. The heating device according to claim 4, characterized in that: The exhaust channel (210) comprises a first exhaust section (211), a second exhaust section (212) and a third exhaust section (213); the first exhaust section (211) and the third exhaust section (213) both extend along a first direction; the second exhaust section (212) extends along a second direction; a first port of the first exhaust section (211) is an air inlet of the exhaust channel (210); a second port of the third exhaust section (213) is in communication with an external environment; and the second exhaust section (212) is connected between the second port of the first exhaust section (211) and the first port of the third exhaust section (213); wherein the first direction intersects with the second direction.

7. The heating device according to claim 6, characterized in that The second thermal insulation portion (200) comprises a third thermal insulation layer (220) and a fourth thermal insulation layer (230), the fourth thermal insulation layer (230) being stacked on a side of the third thermal insulation layer (220) facing away from the heating inner cavity, the second heating element (320) being arranged in the third thermal insulation layer (220), the first exhaust section (211) being opened in the third thermal insulation layer (220), and the second exhaust section (212) and the third exhaust section (213) being opened in the fourth thermal insulation layer (230).

8. The heating device according to claim 4, characterized in that: The first heat-insulating portion (100) comprises a first heat-insulating layer (110) and a second heat-insulating layer (120); the second heat-insulating layer (120) is sleeved on the first heat-insulating layer (110) and forms a heat-insulating gap (130) with the first heat-insulating layer (110); and the first heating element (310) is disposed on the first heat-insulating layer (110); The second thermal insulation layer (120) is provided with a cooling inlet (121) connected to the thermal insulation gap (130), and the first thermal insulation layer (110) is provided with a cooling outlet (111) connected to the thermal insulation gap (130) and the heating inner cavity, and the cooling inlet (121), the thermal insulation gap (130) and the cooling outlet (111) form the air intake channel.

9. The heating device according to claim 8, characterized in that: The first thermal insulation layer (110) is provided with a plurality of cooling outlets (111), and the plurality of cooling outlets (111) are arranged in an array.

10. A semiconductor process equipment, characterized in that: It comprises a reaction chamber (400) and the heating device according to any one of claims 1 to 9, wherein the reaction chamber (400) is located in the heating inner cavity.

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