Semiconductor processing device and induction heating coil thereof

Abstract

The utility model provides a semiconductor processing device and an induction heating coil thereof. The induction heating coil comprises a plurality of turns of coils, each turn of coil is provided with an arc segment, and the arc segments of two adjacent turns of coils are connected through a straight line segment; the induction heating coil is provided with an inner area, a middle area surrounding the inner area and an outer area surrounding the middle area; the two adjacent turns of coils in the inner area have a first spacing, the two adjacent turns of coils in the middle area have a second spacing, the two adjacent turns of coils in the outer area have a third spacing, and the second spacing is larger than the first spacing and the third spacing respectively. Different parts of the tray are respectively heated through a plurality of areas of the induction heating coil, so that the temperature of the tray is locally adjusted, the temperature of the tray and the temperature of a wafer borne by the tray can be uniformly distributed, and the stability of a semiconductor manufacturing process is ensured.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor manufacturing, in particular to a semiconductor processing device and an induction heating coil thereof. Background Art

[0002] In the semiconductor manufacturing process, a heating device is usually required to meet specific temperature requirements. For example, in the MOCVD (metal organic chemical vapor deposition) process, a heating device is used to heat the tray, and the tray heats the wafer carried by it by heat conduction, radiation, etc. Induction heating uses the principle of electromagnetic induction, that is, the alternating current in the induction heating coil generates an alternating magnetic field in space, and the tray is in the alternating magnetic field and generates an induced electromotive force inside itself, thereby generating eddy current heating. Induction heating has the advantages of high efficiency, fast heating speed, sensitive temperature regulation, low maintenance cost, and more suitable for high temperature conditions. It has great advantages in the application of MOCVD. However, the temperature uniformity of the tray and the wafer needs to be guaranteed by the design of the induction heating coil, and is very sensitive to the stability of the coil structure and shape.

[0003] The statements herein merely provide background technology related to the present invention and do not necessarily constitute prior art. Utility Model Content

[0004] The utility model aims to provide a semiconductor processing device and an induction heating coil thereof, wherein the induction heating coil is divided into a plurality of areas, and different parts of a tray are heated respectively, so that the temperature of the tray is locally adjusted, so that the temperature of the tray and the wafers carried by the tray can be evenly distributed, thereby ensuring the stability of the semiconductor manufacturing process.

[0005] In order to achieve the above-mentioned object, the utility model provides an induction heating coil for a semiconductor processing device; the induction heating coil comprises a plurality of coil turns, each coil turn is provided with an arc segment, each arc segment has a first end and a second end, two adjacent coil turns comprise an inner coil turn and an outer coil turn surrounding the inner coil turn, the second end of the arc segment of the inner coil turn is connected to the first end of the arc segment of the outer coil turn by a straight line segment; the straight line segment coincides with or is close to the tangent of the second end of the arc segment of the inner coil turn, or the straight line segment coincides with or is close to the tangent of the first end of the arc segment of the outer coil turn;

[0006] The induction heating coil is provided with an inner area, a middle area surrounding the inner area, and an outer area surrounding the middle area; two adjacent turns of the coil in the inner area have a first spacing, two adjacent turns of the coil in the middle area have a second spacing, and two adjacent turns of the coil in the outer area have a third spacing, and the second spacing is respectively greater than the first spacing and the third spacing.

[0007] Optionally, the first spacing ranges from 3 to 5 mm, the second spacing ranges from 5 to 20 mm, and the third spacing ranges from 3 to 5 mm.

[0008] Optionally, the multiple turns of coils are connected as a whole; or the coil in at least one of the inner area, the middle area and the outer area is not connected to the coils in other areas.

[0009] Optionally, the induction heating coil further includes a plurality of supporting devices, which are distributed along the circumference of the induction heating coil; each of the supporting devices includes a first supporting member and a second supporting member, the first supporting member is arranged along the radial direction of the induction heating coil and connected to the bottom of each turn of the coil, and the second supporting member is connected to the bottom of the first supporting member.

[0010] Optionally, each coil turn is fixedly connected to the first support member in a detachable manner.

[0011] Optionally, a second fixing hole is provided at the bottom of the first support member; a second fixing column is provided at the top of the second support member, and the second fixing column is correspondingly inserted into the second fixing hole.

[0012] Optionally, the second fixing hole is a waist-shaped hole, and the second fixing column is a cylinder.

[0013] Optionally, the first support member is made of ceramic, and the second support member is made of stainless steel.

[0014] Optionally, the induction heating coil is a hollow structure for cooling medium to flow;

[0015] The induction heating coil is provided with at least two main pipes, which are connected to a cooling medium supply device, so that the cooling medium flows into and out of the hollow structure of the induction heating coil through the two main pipes; the two main pipes are also electrically connected to a power supply device for supplying power to the induction heating coil;

[0016] The two main pipes are fixed to the bottom plate of the semiconductor processing device by sealing parts arranged outside the two main pipes, so that each main pipe includes a pipe section located on the vacuum side above the bottom plate and a pipe section located on the atmosphere side below the bottom plate.

[0017] Optionally, the sealing portion includes two first sealing flanges sleeved on the outside of the corresponding main pipelines, and the first sealing flanges are insulated and fixedly connected to the base plate; the first sealing flanges include a flange plate and a neck.

[0018] Optionally, the first sealing flange is provided with a plurality of ventilation holes penetrating the neck.

[0019] Optionally, the sealing portion further includes a second sealing flange sleeved on the outside of the first sealing flange; the two first sealing flanges are respectively penetrated through two axial through holes provided on the second sealing flange; and an insulating component is provided between the first sealing flange and the second sealing flange.

[0020] Optionally, the insulating component includes a first insulating sleeve, which is sleeved outside the neck of the first sealing flange and is located between the flange plate of the first sealing flange and the top of the second sealing flange;

[0021] The insulating component comprises a second insulating sleeve which is sleeved outside the neck of the first sealing flange and is located between the neck and the hole wall of the axial through hole of the second sealing flange.

[0022] Optionally, a first sealing ring is provided between the flange plate of the first sealing flange and the first insulating sleeve; and / or a second sealing ring is provided between the second sealing flange and the first insulating sleeve.

[0023] Optionally, the sealing portion further includes a locking nut, which is sleeved on the outside of the neck of the first sealing flange; the locking nut is located below the second sealing flange, and a third insulating sleeve is provided between the locking nut and the second sealing flange.

[0024] Optionally, the second sealing flange is fixedly mounted at a mounting notch of the base plate; and a third sealing ring is provided between the second sealing flange and the base plate.

[0025] Optionally, a pipeline for circulating refrigerant is provided inside the second sealing flange, and the pipeline is connected to a refrigerant supply device through two secondary pipes.

[0026] Optionally, the induction heating coil comprises a coil body, and a coating located on the surface of the coil body;

[0027] The plating layer comprises an inner nickel plating layer and an outer gold plating layer; or, the plating layer is a nickel-tin alloy plating layer.

[0028] The utility model also provides a semiconductor processing device, which comprises:

[0029] Reaction chamber;

[0030] A rotating shaft is arranged in the reaction chamber;

[0031] A tray, used for carrying wafers, wherein the tray is connected to the rotating shaft;

[0032] The semiconductor processing device further comprises any one of the above-mentioned induction heating coils; the induction heating coil is located below the tray, and the rotating shaft passes through the center of each turn of the coil.

[0033] Optionally, the inner diameter of the induction heating coil is smaller than the inner diameter of the tray, and the outer diameter of the induction heating coil is larger than the outer diameter of the tray.

[0034] Optionally, the upper surface of the tray has a plurality of recesses distributed along the circumference, and the recesses are used to place the wafer base.

[0035] Compared with the prior art, the semiconductor processing device and the induction heating coil provided by the utility model have at least the following technical effects:

[0036] In the semiconductor processing device of the example of the present invention, an induction heating coil divided into multiple zones can be set up, and different parts of the tray can be heated through these zones respectively, so that the temperature of the tray can be locally adjusted, so that the temperature of the tray and the wafers it carries can be evenly distributed, thereby ensuring the stability of the semiconductor manufacturing process.

[0037] In the induction heating coil of the example of the utility model, the coil distribution of at least one area is different from that of other areas, or the power supply parameters of at least one area can be independently controlled, so that the at least one area generates an alternating magnetic field different from that of other areas, so that the temperature of different parts of the tray can be locally optimized when eddy current heat is generated.

[0038] In the induction heating coil of the utility model example, the arc segments of two adjacent turns of the coil are connected by a straight line segment, avoiding sharp corners in the transition part, preventing local overheating of the coil or excessive stress concentration, and effectively extending the service life of the coil. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 is a schematic diagram of a semiconductor processing device according to an example of the present utility model;

[0040] Figure 2 is a cross-sectional view of a supporting device according to an example of the present utility model;

[0041] Figure 3 is a top view of an induction heating coil according to an example of the utility model;

[0042] Figure 4 It is a bottom view of the first fixing hole of the utility model example;

[0043] Figure 5 It is a structural schematic diagram of the induction heating coil of the utility model example when it is connected with the supporting device and the sealing flange;

[0044] Figure 6 yes Figure 5 Schematic diagram of the local structure corresponding to the middle range A;

[0045] Figure 7 It is a schematic diagram of a first sealing flange and a main pipeline of an example of the utility model;

[0046] Figure 8 It is a cross-sectional view of the first and second sealing flanges of the utility model example. DETAILED DESCRIPTION

[0047] like Figure 1 As shown, the embodiment of the utility model provides a semiconductor processing device, which includes a reaction chamber 201; a rotating shaft 205 is provided in the reaction chamber 201, and a tray 202 is connected to the rotating shaft 205; the tray 202 is used to carry a wafer 204 and can rotate with the rotating shaft 205; the upper surface of the tray 202 is provided with a plurality of recesses distributed along the circumference, and the recesses are used to place a wafer base 203, and the wafer 204 is supported by the wafer base 203. An induction heating coil 110 is provided below the tray 202 to heat the tray 202 by induction heating, and the tray 202 heats the wafer 204 by heat conduction, radiation, etc. An air inlet device 206 is provided at the top of the reaction chamber 201, which is used to input process gas into the reaction chamber 201 to process the wafer 204; the reaction chamber 201 is also connected to an exhaust device (not shown in the figure) to discharge reaction byproducts and process gas that does not participate in the reaction from the reaction chamber 201.

[0048] The exemplary semiconductor processing apparatus is a MOCVD device for growing a semiconductor thin film on the surface of the wafer 204 .

[0049] like Figure 1 , Figure 3 As shown, the entire induction heating coil 110 is roughly spiral-shaped and has multiple turns of coils, and the rotating shaft 205 is arranged through the center of each turn of the coil. The number of turns and distribution position of the induction heating coil 110 can be determined according to the size of the tray 202. For example, the inner diameter of the induction heating coil 110 is smaller than the inner diameter of the tray 202, and the outer diameter of the induction heating coil 110 is larger than the outer diameter of the tray 202.

[0050] By way of example, the induction heating coil 110 has 7-10 turns.

[0051] like Figure 3As shown, in the induction heating coil 110 of this embodiment, each turn of the coil is provided with an arc segment 104, which surrounds most of the circumference of this turn; the arc segments 104 of two adjacent turns of the coil are connected by a shorter straight line segment 105, and a smooth transition is achieved, so as to avoid sharp corners at the transition part of the two adjacent turns of the coil, prevent the current from gathering at the corner to cause local overheating of the coil, and prevent the concentration of thermal stress from causing damage to the coil at the corner, thereby effectively extending the service life of the induction heating coil 110. For any two adjacent turns of the coil, one is called the inner turn coil, and the other surrounding the outer periphery of the inner turn coil is called the outer turn coil; each arc segment 104 has a first end and a second end, and the second end of the arc segment 104 of the inner turn coil is connected to the first end of the arc segment 104 of the outer turn coil by a straight line segment 105.

[0052] For example, the straight line segment 105 can be made to coincide with the tangent of the second end of the arc segment 104 of the inner turn coil or to be as close to the tangent as possible (see Figure 3 ), the second end c2 of the straight segment 105 can be transitioned to the first end of the arc segment 104 of the outer turn coil through a very small curvature change; or in other examples, the straight segment 105 is made to coincide with the tangent of the first end of the arc segment 104 of the outer turn coil or to be as close to the tangent as possible (not shown in the figure), so that the first end c1 of the straight segment 105 can be transitioned to the second end of the arc segment 104 of the inner turn coil through a very small curvature change, thereby avoiding the generation of sharp corners between the straight segment 105 and the arc segments 105 at both ends, and achieving a smooth transition between two adjacent turns of the coil. The term "close to the tangent" in the present invention can be understood as the angle range between the straight segment 105 and the tangent of the second end of the arc segment 104 of the inner turn coil is [-10°, 10°], or the angle range between the straight segment 105 and the tangent of the first end of the arc segment 104 of the outer turn coil is [-10°, 10°].

[0053] The tray 202 is made of graphite or other heat-conducting materials; the alternating current applied to the induction heating coil 110 can generate an alternating magnetic field in space, which generates eddy currents inside the tray 202 to generate heat. However, due to the structure, material or manufacturing technology of the tray 202, the conductivity of different parts of the tray 202 is unevenly distributed, and the generated eddy currents are also unevenly distributed, resulting in local temperature differences when the tray 202 is heated.

[0054] In order to compensate for the temperature difference of the tray 202, the induction heating coil 110 is divided into multiple areas in the embodiment of the utility model, corresponding to different parts of the heating tray 202. For example, the number of coil turns or spacing of at least one area is different from that of other areas, or the power or frequency of the alternating current applied to at least one area can be adjusted independently, so that the intensity, distribution, frequency, etc. of the alternating magnetic field generated by the at least one area are different from those of other areas, thereby controlling and adjusting the local temperature of the part of the tray 202 corresponding to the at least one area, so that the temperature of the entire tray 202 is more uniform, and then the temperature of the wafer 204 carried by the tray 202 and indirectly heated is more uniform.

[0055] For example, the tray 202 is divided into an inner portion, a middle portion, and an outer portion arranged concentrically, the inner portion is closer to the center of the tray 202, and the outer portion is closer to the body of the reaction chamber 201; without compensation measures, the temperature of the inner and outer portions of the tray 202 is lower, and the temperature of the middle portion is higher. Figure 2 , Figure 3 In the embodiment, the induction heating coil 110 is divided into an inner region 101, a middle region 102 surrounding the inner region 101, and an outer region 103 surrounding the middle region 102, for heating the inner part, the middle part and the outer part of the tray 202 respectively.

[0056] The coils in the middle area 102 of the induction heating coil 110 are sparsely distributed to prevent the middle part of the tray 202 from being overheated; the coils in the inner area 101 and the outer area 103 are densely distributed to effectively enhance the heating effect on the inner and outer parts of the tray 202; under this partition configuration with different coil densities, the number of coils in each area can be the same or different, and can be set according to needs.

[0057] For example, two adjacent turns of coils in the inner area 101 have a first spacing, two adjacent turns of coils in the middle area 102 have a second spacing, and two adjacent turns of coils in the outer area 103 have a third spacing, wherein the second spacing is greater than the first spacing, and the second spacing is greater than the third spacing.

[0058] For example, the first spacing ranges from 3 to 5 mm, the second spacing ranges from 5 to 20 mm, and the third spacing ranges from 3 to 5 mm.

[0059] As required, the first spacing and the third spacing can be set to the same or different values, and the two can have the same or different value ranges; when there are multiple pairs of adjacent coils in the same area, the spacing between each pair of coils can also be set to the same or different values.

[0060] In some examples, all the multi-turn coils of the induction heating coil 110 can be connected as a whole and electrically connected to a single power supply device so that the coils in each area can obtain an alternating current supply with consistent power and frequency. By adjusting the coil structure or layout of one or some areas, such as setting different numbers of coil turns or spacing, the generated alternating magnetic field can be locally optimized to achieve local adjustment of the temperature of the tray 202.

[0061] In other examples, the coil of at least one of the inner area 101, the middle area 102 and the outer area 103 is not connected to the coils of other areas, but is powered by independent power supply devices, so that the areas where the coils are not connected to each other can obtain alternating current supplies of different powers or frequencies, and generate different alternating magnetic fields to achieve local adjustment of the temperature of the tray 202; under this configuration, the number of coil turns or spacing in each area can be set to be the same or different as needed, so as to achieve more flexible temperature control of different parts of the tray 202.

[0062] The coil body of the induction heating coil 110 is made of copper. Since the induction heating coil 110 is very close to the high-temperature graphite tray 202 and will be exposed to a chlorine or chloride environment during the cleaning process, in order to improve the emissivity and corrosion resistance of the surface of the induction heating coil 110, the coil body needs to be surface coated. In some applications, a coating is formed on the surface of the coil body by chemical nickel plating and then gold electroplating; the coating includes an inner nickel plating layer and an outer gold plating layer; for example, the nickel plating layer has a thickness of 5-20μm and the gold plating layer has a thickness of 0.5-3μm. In other applications, direct chemical plating of nickel-tin alloy is used to reduce production costs, and a nickel-tin alloy coating is formed on the surface of the coil body.

[0063] See also Figure 1 to Figure 6 As shown, the induction heating coil 110 is fixedly mounted on the bottom plate 207 of the reaction chamber 201 through a plurality of supporting devices; these supporting devices are arranged in a circumferential distribution along the induction heating coil 110 ( Figure 5 6 supporting devices are provided as an example).

[0064] Each supporting device includes a first supporting member 120 and a second supporting member 130, wherein the first supporting member 120 is arranged along the radial direction of the induction heating coil 110 and is connected to the bottom of each turn of the coil; the second supporting member 130 is connected to the bottom of the first supporting member 120; and the bottom of the second supporting member 130 is fixedly connected to the bottom plate 207 of the reaction chamber 201.

[0065] like Figure 2 , Figure 6 , Figure 7As shown, a first fixing column 111 is provided at the bottom of each turn of the coil, for example, made of copper or copper alloy; the first fixing column 111 is inserted into each first fixing hole 124 correspondingly opened at the top of the first support member 120; the first support member 120 also includes a plurality of pin holes 121, corresponding to the pin holes 112 provided on each first fixing column 111, and having pins 122 ( Figure 6 ), ensuring reliable connection between each turn of the coil and the first support member 120. The coil and the first support member 120 are fixedly connected in a detachable manner, which is conducive to the installation and maintenance of the coil and the first support member 120.

[0066] like Figure 2 As shown, a plurality of second fixing holes 123 are provided at the bottom of the first support member 120; a plurality of second fixing columns 131 are provided at the top of the second support member 130, and each second fixing column 131 is correspondingly inserted into each second fixing hole 123 to fix the first support member 120 and the second support member 130 together.

[0067] For example, the first support member 120 is made of non-conductive ceramic materials such as alumina or zirconia to electrically insulate the induction heating coil 110 from other conductive components in the reaction chamber 201; the second support member 130 and its second fixing column 131 are made of stainless steel.

[0068] Considering that the two supporting members are made of different materials and have different thermal expansion coefficients, the second fixing hole 123 can be set as a waist-shaped hole ( Figure 4 ), the second fixing column 131 is set to a cylinder; in this way, after the second fixing column 131 is inserted, a certain gap can still be left in the second fixing hole 123 to prevent the two components from changing in volume mismatched during thermal expansion and generating stress, which may cause damage to the structure of the first ceramic support member 120, thereby extending the service life of related components and improving the reliability of the support device.

[0069] Figure 2 In the example, a third fixing hole 132 is provided at the bottom of the second support member 130, and a third fixing column (not shown) is provided on the bottom plate 207 of the reaction chamber 201, which can be inserted into the third fixing hole 132 to fix the second support member 130 to the bottom plate 207. Figure 5 In another example, a bolt hole 133 is provided at the bottom of the second support member 130 , and the second support member 130 can be fixedly connected to the bottom plate 207 by means of bolts passing through the bolt holes 133 .

[0070] For example, the bolts can first pass through the bottom plate 207 and then pass upward to the bolt holes 133 of the second support member 130 for fixing. Alternatively, some flanges extending relative to the length and / or width direction of the second support member 130 body can be formed at the bottom of the second support member 130, and the bolt holes 133 can be opened at the flanges, so that the bolts can pass through the bolt holes 133 from top to bottom and then be fixed to the bottom plate 207, or they can first pass through the bottom plate 207 and then pass upward to the bolt holes 133 for fixing. Figure 5 In the example of setting the bolt hole 133 shown, the third fixing hole 132 at the bottom of the second support member 130 can be set or omitted; when the third fixing hole 132 is provided, the third fixing column (not shown in the figure) on the base plate 207 can be inserted accordingly to fix the second support member 130 to the base plate 207.

[0071] See also Figure 2 , Figure 3 , Figure 5 , Figure 7 , Figure 8 As shown, the induction heating coil 110 is a hollow structure, and a cooling medium (such as cooling water) can flow inside to prevent the coil temperature from being too high. The induction heating coil 110 is provided with at least two main pipes 300; the two main pipes 300 are connected to a supply device for the cooling medium, so that the cooling medium flows into and out of the hollow structure of the induction heating coil 110; the two main pipes 300 are also electrically connected to a power supply device to apply alternating current to the induction heating coil 110. If the induction heating coil 110 is provided with a plurality of regions where the coils are not connected to each other, a pair of main pipes 300 can be configured for each of these regions for separate power supply and cooling medium supply.

[0072] The following description will be made by taking the induction heating coil 110 as an example in which two main pipes 300 are provided. An opening is provided at the bottom plate 207 of the reaction chamber 201, and one end of each of the two main pipes 300 passes through the opening and extends into the reaction chamber 201, and the other end of each of the two main pipes 300 remains outside the reaction chamber 201. A sealing portion is provided on the outside of the two main pipes 300, and the two main pipes 300 are fixed at the opening of the bottom plate 207, and the opening at the bottom plate 207 is closed by the sealing portion. Each of the two main pipes 300 has a part of the pipe section located on the vacuum side above the bottom plate 207, and the end of the pipe section on the vacuum side is connected to the joint at the induction heating coil 110; the other part of the pipe section of each of the two main pipes 300 is located on the atmosphere side below the bottom plate 207, and is connected to the power supply device and the cooling medium supply device. Figure 8 The area above the dotted line B in FIG. 2 corresponds to the vacuum side inside the reaction chamber 201 .

[0073] like Figure 7As shown, the sealing part includes two first sealing flanges 310, which are respectively sleeved on the outside of the two main pipes 300; the first sealing flanges 310 are insulated and fixedly connected to the bottom plate 207 of the reaction chamber 201. The first sealing flange 310 includes a flange plate 312 and a neck 311, and the neck 311 is sleeved on the outside of the main pipe 300 and is welded and fixed to the main pipe 300.

[0074] For example, a vent hole 313 is provided at the neck 311 of the first sealing flange 310 to prevent a vacuum cavity from forming between the outer wall of the main pipe 300 and the neck 311 of the first sealing flange 310 during welding; the vent hole 313 is not connected to the interior of the main pipe 300.

[0075] like Figure 5 , Figure 8 As shown, the sealing portion further includes a second sealing flange 320 sleeved outside the first sealing flange 310, and the two first sealing flanges 310 are respectively penetrated at two axial through holes provided in the second sealing flange 320. The second sealing flange 320 is fixed at the opening of the bottom plate 207 of the reaction chamber 201 and closes the opening.

[0076] An insulating component is provided between the first sealing flange 310 and the second sealing flange 320. The insulating component may include a first insulating sleeve 331, which is sleeved outside the neck 311 of the first sealing flange 310 and located between the flange plate 312 of the first sealing flange 310 and the top of the second sealing flange 320.

[0077] For example, the flange plate 312 of the first sealing flange 310 and the first insulating sleeve 331 are sealed via a first sealing ring; the second sealing flange 320 and the first insulating sleeve 331 are sealed via a second sealing ring. Figure 8 In the example, a first sealing groove 341 is provided at the bottom of the flange plate 312 of the first sealing flange 310, opposite to the top of the first insulating sleeve 331, and the first sealing ring is located in the first sealing groove 341; a second sealing groove 342 is provided at the top of the second sealing flange 320, opposite to the bottom of the first insulating sleeve 331, and the second sealing ring is located in the second sealing groove 342.

[0078] The insulating component may further include a second insulating sleeve 332, which is sleeved outside the neck 311 of the first sealing flange 310 and is located between the neck 311 and the hole wall of the axial through hole of the second sealing flange 320. The second insulating sleeve 332 may cover the vent hole 313 at the neck 311 of the first sealing flange 310.

[0079] The sealing portion further includes a locking nut 330 which is sleeved on the outside of the neck 311 of the first sealing flange 310 ; the locking nut 330 is located below the second sealing flange 320 , and a third insulating sleeve 333 is provided between the locking nut 330 and the second sealing flange 320 .

[0080] The lower surface of the neck 311 of the first sealing flange 310 is provided with an external thread, and the locking nut 330 is provided with a matching internal thread, so that the locking nut 330 can be fixed to the neck 311 of the first sealing flange 310; during the tightening process of the locking nut 330, the second sealing flange 320, the first insulating sleeve 331, the second insulating sleeve 332, the third insulating sleeve 333, the first sealing ring, the second sealing ring and other components are locked together with the assembly after the first sealing flange 310 and the main pipeline 300 are welded.

[0081] For example, the main pipeline 300 is a copper pipe; a brass joint 301 is provided at the end of the pipe section of the main pipeline 300 located on the atmospheric side, which is used to connect the power supply device and the cooling medium supply device outside the cavity. The first sealing flange 310 and the second sealing flange 320 are made of stainless steel respectively; the first insulating sleeve 331, the second insulating sleeve 332, and the third insulating sleeve 333 are made of non-conductive ceramic material. The locking nut 330 is connected to the first sealing flange 310 instead of directly connecting it to the main pipeline 300. In this way, the main pipeline 300 is replaced by the harder first sealing flange 310 to withstand the tightening force when connecting the locking nut 330, which can avoid damage to the main pipeline 300 and make the connection between the locking nut 330 and the combination of the first sealing flange 310 and the main pipeline 300 more secure.

[0082] The bottom plate 207 of the reaction chamber 201 is provided with bolts, which can be inserted into the mounting holes 350 provided in the second sealing flange 320 to fix the bottom plate 207 and the second sealing flange 320. The second sealing flange 320 and the bottom plate 207 are sealed by a third sealing ring. The bottom of the second sealing flange 320 is provided with a third sealing groove 343 opposite to the bottom plate 207, and the third sealing ring is located in the third sealing groove 343.

[0083] For example, a pipeline for the circulation of refrigerant is provided inside the second sealing flange 320, and the pipeline is connected to the refrigerant supply device through the joints 303 at the ends of the two secondary pipes 302 to cool the second sealing flange 320 and each sealing ring. For example, a groove 321 is provided at the top of the second sealing flange 320, and a cover plate 322 is provided to cover the opening of the groove 321, so as to form the pipeline for the circulation of refrigerant.

[0084] In summary, in the semiconductor processing device provided in this embodiment, an induction heating coil 110 divided into multiple areas can be set, and different parts of the tray 202 can be heated through these areas respectively, so that the temperature of the tray 202 can be locally adjusted, so that the temperature of the tray 202 and the wafer 204 it carries can be evenly distributed, thereby ensuring the stability of the semiconductor manufacturing process.

[0085] Although the content of the utility model has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the utility model. After reading the above content, various modifications and substitutions of the utility model will be obvious to those skilled in the art. Therefore, the protection scope of the utility model should be limited by the attached claims.

Claims

1. An induction heating coil for a semiconductor processing device, characterized in that: The induction heating coil comprises a plurality of coil turns, each coil turn is provided with an arc segment, each arc segment has a first end and a second end, two adjacent coil turns comprise an inner coil turn and an outer coil turn surrounding the inner coil turn, the second end of the arc segment of the inner coil turn is connected to the first end of the arc segment of the outer coil turn by a straight line segment; the straight line segment coincides with or is close to a tangent of the second end of the arc segment of the inner coil turn, or the straight line segment coincides with or is close to a tangent of the first end of the arc segment of the outer coil turn; The induction heating coil is provided with an inner area, a middle area surrounding the inner area, and an outer area surrounding the middle area; two adjacent turns of the coil in the inner area have a first spacing, two adjacent turns of the coil in the middle area have a second spacing, and two adjacent turns of the coil in the outer area have a third spacing, and the second spacing is respectively greater than the first spacing and the third spacing.

2. The induction heating coil according to claim 1, characterized in that: The first spacing ranges from 3 to 5 mm, the second spacing ranges from 5 to 20 mm, and the third spacing ranges from 3 to 5 mm.

3. The induction heating coil according to claim 1, characterized in that: The multiple turns of coils are connected as a whole; or the coil of at least one of the inner area, the middle area and the outer area is not connected to the coils of other areas.

4. The induction heating coil according to claim 3, characterized in that: Also includes: A plurality of support devices are distributed along the circumference of the induction heating coil; each of the support devices comprises a first support member and a second support member, the first support member is arranged along the radial direction of the induction heating coil and connected to the bottom of each turn of the coil, and the second support member is connected to the bottom of the first support member.

5. The induction heating coil according to claim 4, characterized in that: Each coil turn is fixedly connected to the first support member in a detachable manner.

6. The induction heating coil according to claim 4, characterized in that: A second fixing hole is provided at the bottom of the first support member; a second fixing column is provided at the top of the second support member, and the second fixing column is correspondingly inserted into the second fixing hole; the second fixing hole is a waist-shaped hole, and the second fixing column is a cylinder.

7. The induction heating coil according to claim 4, characterized in that: The first support member is made of ceramic, and the second support member is made of stainless steel.

8. The induction heating coil according to claim 3, characterized in that: The induction heating coil is a hollow structure for the cooling medium to flow; The induction heating coil is provided with at least two main pipes, which are connected to a cooling medium supply device, so that the cooling medium flows into and out of the hollow structure of the induction heating coil through the two main pipes; the two main pipes are also electrically connected to a power supply device for supplying power to the induction heating coil; The two main pipes are fixed to the bottom plate of the semiconductor processing device by sealing parts arranged outside the two main pipes, so that each main pipe includes a pipe section located on the vacuum side above the bottom plate and a pipe section located on the atmosphere side below the bottom plate.

9. The induction heating coil according to claim 8, characterized in that: The sealing part comprises two first sealing flanges which are sleeved on the outside of the corresponding main pipelines, and the first sealing flanges are insulated and fixedly connected to the bottom plate; the first sealing flanges comprise a flange plate and a neck.

10. The induction heating coil according to claim 9, characterized in that: The first sealing flange is provided with a plurality of vent holes penetrating through the neck.

11. The induction heating coil according to claim 9, characterized in that: The sealing portion further comprises a second sealing flange sleeved on the outside of the first sealing flange; the two first sealing flanges are respectively penetrated through two axial through holes provided in the second sealing flange; and an insulating component is provided between the first sealing flange and the second sealing flange.

12. The induction heating coil according to claim 11, characterized in that: The insulating component comprises a first insulating sleeve, which is sleeved outside the neck of the first sealing flange and is located between the flange plate of the first sealing flange and the top of the second sealing flange; The insulating component comprises a second insulating sleeve which is sleeved outside the neck of the first sealing flange and is located between the neck and the hole wall of the axial through hole of the second sealing flange.

13. The induction heating coil according to claim 12, characterized in that: A first sealing ring is provided between the flange plate of the first sealing flange and the first insulating sleeve; And / or, a second sealing ring is provided between the second sealing flange and the first insulating sleeve.

14. The induction heating coil according to claim 13, characterized in that: The sealing portion further comprises a locking nut which is sleeved on the outer side of the neck of the first sealing flange; The locking nut is located below the second sealing flange, and a third insulating sleeve is provided between the locking nut and the second sealing flange.

15. The induction heating coil according to claim 14, characterized in that: The second sealing flange is fixedly installed at the installation notch of the bottom plate; a third sealing ring is arranged between the second sealing flange and the bottom plate.

16. The induction heating coil according to any one of claims 11 to 15, characterized in that: A pipeline for circulating refrigerant is provided inside the second sealing flange, and the pipeline is connected to a refrigerant supply device through two secondary pipes.

17. The induction heating coil according to claim 1, characterized in that: The induction heating coil comprises a coil body and a coating located on the surface of the coil body; The plating layer comprises an inner nickel-plated layer and an outer gold-plated layer; Alternatively, the plating layer is a nickel-tin alloy plating layer.

18. A semiconductor processing device comprising: Reaction chamber; A rotating shaft is arranged in the reaction chamber; A tray, used for carrying wafers, wherein the tray is connected to the rotating shaft; It is characterized in that The semiconductor processing device further comprises the induction heating coil according to any one of claims 1 to 17; the induction heating coil is located below the tray, and the rotating shaft passes through the center of each turn of the coil.

19. The semiconductor processing apparatus according to claim 18, wherein: The inner diameter of the induction heating coil is smaller than the inner diameter of the tray, and the outer diameter of the induction heating coil is larger than the outer diameter of the tray.

20. The semiconductor processing apparatus according to claim 19, wherein: The upper surface of the tray has a plurality of recesses distributed along the circumference, and the recesses are used to place wafer bases.

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