Multi-unit high-power IGBT (Insulated Gate Bipolar Translator) module

By designing a multi-unit high-power IGBT module of the device body and heat dissipation assembly, using the combination of copper base plate, ceramic substrate, rectifier diode and inverter unit, combined with the circulation mechanism of circulation tube and condensate, the problems of poor heat dissipation effect and single power increase method of existing modules are solved, significant heat dissipation effect and power improvement are achieved, and the service life of the module is extended.

CN222762963UActive Publication Date: 2025-04-15DONGGUAN PUWAN PHOTOELECTRIC COOLING TECH CO LTD
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Patent Information

Application Number
CN202420790363.9
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-04-17
Publication Date
2025-04-15
Estimated Expiration
2034-04-17

AI Technical Summary

Technical Problem

The heat dissipation effect of existing multi-unit high-power IGBT modules is not significant enough, and the method of increasing power by only increasing the area of ​​the DBC module is relatively simple, which cannot effectively extend the service life of the module and improve performance.

Method used

A multi-unit high-power IGBT module including a device body and a heat dissipation assembly is designed. The device body is combined with a copper base plate, a ceramic substrate, a rectifier diode and an inverter unit, and the heat dissipation component performs dual heat dissipation through the circulation mechanism of the circulation tube and the condensate.

Benefits of technology

It significantly enhances the heat dissipation effect and power of the IGBT module, extends the service life of the module, and improves its performance. Compared with the prior art, the heat dissipation effect is significantly improved through the dual heat dissipation mechanism, and the power is significantly enhanced through the combination of multiple modules.

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Abstract

The utility model discloses a multi-unit high-power IGBT module which comprises a device body, the upper end of the device body is detachably connected with a heat dissipation assembly, the device body comprises a copper bottom plate, the upper end of the copper bottom plate is fixedly connected with a ceramic substrate, and the upper end of the ceramic substrate is fixedly provided with a first module and two second modules respectively. The upper end of the first module is fixedly provided with a plurality of rectifier diodes. According to the utility model, the device body 1 is matched with the heat dissipation assembly, so that the heat dissipation performance of the module can be obviously enhanced, the service power of the module can be enhanced, and the service life of the module can be prolonged while the service performance can be enhanced.
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Description

Technical Field

[0001] The utility model relates to the field of IGBT modules, in particular to a multi-unit high-power IGBT module. Background Art

[0002] IGBT module is a composite fully controlled voltage-driven power semiconductor composed of BJT (bipolar junction transistor) and MOS (insulated gate field effect transistor). Since the internal structure of multi-unit high-power IGBT module generates a lot of heat during operation, if the heat cannot be dissipated in time, it will cause damage to the IGBT module. In order to extend its service life, it is usually necessary to use an IGBT module that can dissipate heat. Among them, the "multi-unit high-power IGBT module" disclosed in the application number "CN202221987427.1" is also an increasingly mature technology. Its " When the new IGBT module is in use, due to its high power, it generates a lot of heat, which may cause damage to the IGBT module. When in use, first inject cold water into the insulating tube, seal it through the sealing end cover, then extract the air in the insulating tube to keep the inside in a negative pressure state, then connect the condensing section and the heating section to the connecting section of the heat dissipation ring, and fix the heat dissipation ring thread on the lower end of the copper base plate. When the IGBT module generates heat, the heating tube absorbs the heat and transfers the heat to the liquid absorption core, and then the liquid absorption core transfers it to the condensing section, and the condensing section is cooled down. Through the cooperation of the heat dissipation components, The IGBT module is cooled to avoid damage to the IGBT module due to excessive temperature, thereby extending the service life of the IGBT module. The utility model can also install two large-area DBC substrates on the copper-clad ceramic substrate to avoid the side-by-side installation of multiple DBC modules, which causes more gaps on the upper end of the copper-clad ceramic substrate. The two large-area DBC modules can increase the power of the IGBT module, thereby enhancing the performance of the IGBT module. However, the IGBT module has the following defects during use: the IGBT module can indeed achieve a heat dissipation effect through the provision of an insulating tube, a condensation section and a heat dissipation ring, but because the insulating tube and the condensation section are side-by-side structures, the condensed water inside them cannot circulate, so the heat dissipation effect of the IGBT module is not significant enough. Based on this, it is necessary to provide an IGBT module that can significantly improve the heat dissipation effect. In addition, the IGBT module can indeed increase the power of the IGBT module through the provision of two large-area DBC modules, but the method of increasing the power only through two DBC modules is relatively simple. Based on this, it is necessary to provide an IGBT module that can further increase the power. Utility Model Content

[0003] The purpose of the utility model is to provide a multi-unit high-power IGBT module to solve the problems raised in the above background technology.

[0004] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a multi-unit high-power IGBT module, comprising a device body, the upper end of which is detachably connected to a heat dissipation component;

[0005] The device body includes a copper base plate, the upper end of which is fixedly connected to a ceramic substrate, the upper ends of which are respectively fixedly installed with a first module and two second modules, the upper end of the first module is fixedly installed with a plurality of rectifier diodes, the upper ends of the two second modules are fixedly installed with a plurality of inverter units, the upper end of one of the second modules is fixedly installed with a thermistor, the first module and the second module are fixedly installed with bonding wires around them, the heat dissipation component includes a shell installed on the upper end of the copper base plate, a circulation pipe is fixedly installed inside the shell, both ends of the circulation pipe are fixedly connected with liquid inlet pipes, and a sealing plug is movably inserted inside the liquid inlet pipe.

[0006] As a preferred solution of the utility model, a plurality of plug-in rings are fixedly connected to the upper end of the copper bottom plate.

[0007] As a preferred solution of the utility model, limiting holes are provided on both sides of the shell, the liquid inlet pipes at both ends of the circulation pipe are fixedly inserted in the limiting holes, a plurality of plug-in holes are provided on the surface of the shell, and a plurality of plug-in rings are movably inserted in the plug-in holes.

[0008] As a preferred solution of the utility model, the copper bottom plate and the shell are bonded to each other by silicone.

[0009] As a preferred solution of the utility model, the circulation pipe and the liquid inlet pipe are both made of stainless steel, and the sealing plug is made of natural rubber.

[0010] As a preferred solution of the present utility model, the shell is made of polyethylene.

[0011] Compared with the prior art, the beneficial effects of the utility model are:

[0012] 1. The utility model can significantly enhance the heat dissipation effect of the IGBT module by setting the device body in conjunction with the heat dissipation component. When in use, the temperature of the IGBT module can be checked and controlled by firstly using the inverter unit in conjunction with the thermistor, and then the ceramic substrate can be used for preliminary heat dissipation. Subsequently, the condensate is transported to the inside of the circulation pipe through the liquid inlet pipe, and the condensate is circulated in the circulation pipe to perform secondary uniform heat dissipation, thereby significantly enhancing the heat dissipation performance of the IGBT module. Compared with the heat dissipation effect of a single structure in the prior art "a multi-unit high-power IGBT module", the utility model can perform dual heat dissipation through the above structure, thereby significantly enhancing the heat dissipation effect;

[0013] 2. The utility model can also further increase the power of the IGBT module through the device body. When in use, the rectifier diodes at the upper ends of the first module and the two second modules can be used in conjunction with the inverter unit to significantly enhance the power of the IGBT module. The power of the IGBT module can be further enhanced by current transmission in conjunction with a number of bonding wires. Compared with the prior art "a multi-unit high-power IGBT module" that only uses two large-area DBC modules to increase power, the utility model can significantly enhance the power of the IGBT module through the above operation, thereby enhancing the performance of the amplifier IGBT module. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of the overall structure of the utility model;

[0015] Figure 2 This is a disassembled diagram of the main structure of the device of the utility model;

[0016] Figure 3 This is a disassembly diagram of the heat dissipation component structure of the utility model.

[0017] In the figure: 1. device body; 11. copper base plate; 12. ceramic substrate; 13. first module; 14. second module; 15. rectifier diode; 16. inverter unit; 17. thermistor; 18. bonding wire; 111. plug ring; 2. heat dissipation component; 21. shell; 22. circulation pipe; 23. liquid inlet pipe; 24. sealing plug; 211. limit hole; 212. plug hole. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0019] See also Figure 1-3 , the utility model provides a technical solution: a multi-unit high-power IGBT module, comprising a device body 1, the upper end of which is detachably connected with a heat dissipation component 2;

[0020] The device body 1 includes a copper base plate 11, the upper end of the copper base plate 11 is fixedly connected to a ceramic substrate 12, the upper end of the ceramic substrate 12 is respectively fixedly installed with a first module 13 and two second modules 14, the upper end of the first module 13 is fixedly installed with a plurality of rectifier diodes 15, the upper ends of the two second modules 14 are fixedly installed with a plurality of inverter units 16, the upper end of one of the second modules 14 is fixedly installed with a thermistor 17, the first module 13 and the second module 14 are fixedly installed with bonding wires 18 around them, and the heat dissipation component 2 includes a shell 21 installed on the upper end of the copper base plate 11, a circulation pipe 22 is fixedly installed inside the shell 21, both ends of the circulation pipe 22 are fixedly connected with a liquid inlet pipe 23, and a sealing plug 24 is movably inserted inside the liquid inlet pipe 23.

[0021] Specifically, by setting up the device body 1 in conjunction with the heat dissipation component 2, not only can the heat dissipation performance of the IGBT module be significantly enhanced, but also the use power of the IGBT module can be enhanced, thereby extending the service life of the IGBT module while enhancing the use performance. When in use, the copper base plate 11 is combined with the first module 13 and the second module 14 at the upper end to enhance the use performance of the IGBT module. At the same time, the thermistor 17 is combined with the inverter unit 16 to monitor and control the temperature of the IGBT module. At the same time, the condensate is transported from the liquid inlet pipe 23 to the inside of the circulation pipe 22, so that the condensate circulates in the circulation pipe 22, which can further enhance the heat dissipation performance of the IGBT module, thereby extending the service life of the IGBT module.

[0022] In this embodiment, a plurality of plug-in rings 111 are fixedly connected to the upper end of the copper bottom plate 11 .

[0023] Specifically, the IGBT module can be spliced ​​and fixed by connecting the plug ring 111 and the heat dissipation assembly 2, and it is also convenient to disassemble.

[0024] In this embodiment: limiting holes 211 are provided on both sides of the shell 21, the liquid inlet pipes 23 at both ends of the circulation pipe 22 are fixedly plugged into the inside of the limiting holes 211, a plurality of plug-in holes 212 are provided on the surface of the shell 21, and a plurality of plug-in rings 111 are movably plugged into the inside of the plug-in holes 212.

[0025] Specifically, by inserting the plug ring 111 into the plug hole 212 , it is convenient to splice and fix the IGBT module, and it is also convenient to disassemble the IGBT module.

[0026] In this embodiment, the copper bottom plate 11 and the housing 21 are bonded to each other by silicone.

[0027] Specifically, bonding the copper bottom plate 11 and the housing 21 to each other by using silicone can not only enhance the connection strength between the two, but the silicone also has heat dissipation performance, further enhancing the heat dissipation effect of the IGBT module.

[0028] In this embodiment, the circulation pipe 22 and the liquid inlet pipe 23 are both made of stainless steel, and the sealing plug 24 is made of natural rubber.

[0029] Specifically, the circulation pipe 22 and the liquid inlet pipe 23 made of stainless steel can avoid rust when in contact with condensate, thereby extending the service life of the IGBT module. The sealing plug 24 made of natural rubber can enhance the sealing of the liquid inlet pipe 23, thereby ensuring the heat dissipation effect of the heat dissipation component 2.

[0030] In this embodiment, the housing 21 is made of polyethylene.

[0031] Specifically, the shell 21 made of polyethylene can not only reduce its own weight, but also enhance its own strength, thereby extending the service life of the shell 21.

[0032] Working principle: When in use, the utility model can significantly enhance the power of the IGBT module through the copper bottom plate 11, the first module 13, and the several rectifier diodes 15 on the upper ends of the two second modules 14, and the inverter unit 16, thereby enhancing the performance of the IGBT module. In addition, the ceramic substrate 12 can play an insulating effect and perform preliminary heat dissipation. Then, the temperature of the IGBT module can be checked by the thermistor 17, and the IGBT module can be initially dissipated by cooperating with the inverter unit 16. At the same time, the condensate is transported to the inside of the circulation pipe 22 through the liquid inlet pipe 23. By inserting the sealing plug 24 into the liquid inlet pipe 23, the condensate can circulate in the circulation pipe 22, thereby significantly enhancing the heat dissipation effect of the IGBT module. The above-mentioned structures cooperate with each other to significantly enhance the heat dissipation effect of the IGBT module, thereby improving the heat dissipation of the IGBT module and extending its service life.

[0033] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0034] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A multi-unit high-power IGBT module, comprising a device body (1), characterized in that: The upper end of the device body (1) is detachably connected to a heat dissipation component (2); The device body (1) comprises a copper base plate (11), the upper end of the copper base plate (11) is fixedly connected to a ceramic substrate (12), the upper end of the ceramic substrate (12) is respectively fixedly mounted with a first module (13) and two second modules (14), the upper end of the first module (13) is fixedly mounted with a plurality of rectifier diodes (15), the upper ends of the two second modules (14) are fixedly mounted with a plurality of inverter units (16), the upper end of one of the second modules (14) is fixedly mounted with a thermistor (17), the first module (13) and the second module (14) are fixedly mounted with bonding wires (18), and the heat dissipation component (2) comprises a shell (21) mounted on the upper end of the copper base plate (11), a circulation pipe (22) is fixedly mounted inside the shell (21), both ends of the circulation pipe (22) are fixedly connected with a liquid inlet pipe (23), and a sealing plug (24) is movably inserted inside the liquid inlet pipe (23).

2. A multi-unit high-power IGBT module according to claim 1, characterized in that: A plurality of plug-in rings (111) are fixedly connected to the upper end of the copper bottom plate (11).

3. A multi-unit high-power IGBT module according to claim 2, characterized in that: Limiting holes (211) are provided on both sides of the shell (21), and the liquid inlet pipes (23) at both ends of the circulation pipe (22) are fixedly plugged into the inside of the limiting holes (211). A plurality of plug-in holes (212) are provided on the surface of the shell (21), and a plurality of plug-in rings (111) are movably plugged into the inside of the plug-in holes (212).

4. A multi-unit high-power IGBT module according to claim 1, characterized in that: The copper bottom plate (11) and the housing (21) are bonded to each other via silica gel.

5. The multi-unit high-power IGBT module according to claim 1, characterized in that: The circulation pipe (22) and the liquid inlet pipe (23) are both made of stainless steel, and the sealing plug (24) is made of natural rubber.

6. A multi-unit high-power IGBT module according to claim 1, characterized in that: The shell (21) is made of polyethylene.

Citation Information

Patent Citations

  • Multi-unit high-power IGBT (Insulated Gate Bipolar Translator) module

    CN217822765U