Infrared detector based on nanotube

Abstract

The utility model provides a nanotube-based infrared detector. The nanotube-based infrared detector comprises a photosensitive layer and an electrode, the electrode is arranged on the photosensitive layer; the photosensitive layer comprises a plurality of nanotube groups; each nanotube group comprises a plurality of nano photosensitive tubes, and the plurality of nano photosensitive tubes are concentrically arranged; according to the infrared detector, the effect of a resonant cavity and the effect of multiple reflections can be achieved through the nanotube group formed by the concentric arrangement of the plurality of nano photosensitive tubes and the photosensitive layer film formed by the plurality of nanotube groups, the absorption of light is enhanced, and meanwhile, the nano size effect is also beneficial to the absorption of light, so that the sensitivity of the infrared detector is improved.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of sensors, and in particular to a nanotube-based infrared detector. Background Art

[0002] Current infrared detectors are made based on photosensitive films, but the photosensitive films of infrared detectors are usually of a single structure, the photosensitive films of infrared detectors are of a vertical structure, or the photosensitive films of infrared detectors are of a horizontal structure; in addition, the growth area of ​​the photosensitive films of infrared detectors is relatively large, and it is easy to produce more defects or dislocation density, which makes the infrared detector absorb insufficient light and reduces the sensitivity of the infrared detector. Utility Model Content

[0003] The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.

[0004] The purpose of the present application is to solve one of the technical problems existing in the related art to at least a certain extent. The embodiment of the present application provides an infrared detector based on nanotubes, which enhances the absorption of light and improves the sensitivity of the infrared detector by concentrically arranging multiple nano-photosensitive tubes.

[0005] An embodiment of the present application is a nanotube-based infrared detector, comprising: a photosensitive layer and an electrode; the electrode is arranged on the photosensitive layer; the photosensitive layer comprises a plurality of nanotube groups; each nanotube group comprises a plurality of nanophotosensitive tubes, and the plurality of nanophotosensitive tubes are concentrically arranged.

[0006] According to some embodiments of the present application, the nanophototube is made of gallium arsenide material.

[0007] According to some embodiments of the present application, the number of nanophotosensitive tubes in each nanotube group ranges from 3 to 5.

[0008] According to some embodiments of the present application, the inner diameter of the smallest nanophotosensitive tube in each of the nanotube groups ranges from 20 nanometers to 50 nanometers.

[0009] According to some embodiments of the present application, the outer diameter of the largest nanophotosensitive tube in each of the nanotube groups ranges from 200 nanometers to 2000 nanometers.

[0010] According to some embodiments of the present application, the thickness of the nanophotosensitive tube ranges from 30 nanometers to 100 nanometers.

[0011] According to some embodiments of the present application, in each of the nanotube groups, the distance between two adjacent nanophotosensitive tubes is in a range of 20 nanometers to 50 nanometers.

[0012] According to some embodiments of the present application, the center distance between two adjacent nanotube groups ranges from 690 nanometers to 4000 nanometers.

[0013] According to some embodiments of the present application, quantum dots made of silver are disposed on the photosensitive layer, and the diameter of the quantum dots made of silver ranges from 2 nanometers to 5 nanometers.

[0014] According to some embodiments of the present application, quantum dots made of graphene are disposed on the photosensitive layer, and the diameter of the quantum dots made of graphene ranges from 30 nanometers to 100 nanometers.

[0015] The above scheme has at least the following beneficial effects: by concentrically arranging multiple nano-photosensitive tubes to form a nanotube group, and by forming a photosensitive layer film through multiple groups of nanotube groups, it can play the role of a resonant cavity and multiple reflections, thereby enhancing the absorption of light. At the same time, its nano-size effect is also conducive to the absorption of light, thereby improving the sensitivity of the infrared detector. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings are used to provide further understanding of the technical solution of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the technical solution of the present application and do not constitute a limitation on the technical solution of the present application.

[0017] Figure 1 is a structural diagram of a nanotube-based infrared detector provided in an embodiment of the present application;

[0018] Figure 2 It is a front structural diagram of a nanotube-based infrared detector provided in an embodiment of the present application. DETAILED DESCRIPTION

[0019] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0020] It should be noted that, although the functional modules are divided in the device schematic diagram and the logical order is shown in the flowchart, in some cases, the steps shown or described may be performed in a different order than the module division in the device or the order in the flowchart. The terms "first", "second", etc. in the specification, claims or the above drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence.

[0021] Current infrared detectors are made based on photosensitive films, but the photosensitive films of infrared detectors are usually of a single structure, the photosensitive films of infrared detectors are of a vertical structure, or the photosensitive films of infrared detectors are of a horizontal structure; in addition, the growth area of ​​the photosensitive films of infrared detectors is relatively large, and it is easy to produce more defects or dislocation density, which makes the infrared detector absorb insufficient light and reduces the sensitivity of the infrared detector.

[0022] In order to solve the above problems, an embodiment of the present application provides an infrared detector based on nanotubes.

[0023] The embodiments of the present application are further described below in conjunction with the accompanying drawings.

[0024] Reference Figure 1 and Figure 2 The infrared detector includes: a photosensitive layer and an electrode 200; the electrode 200 is arranged on the photosensitive layer; the photosensitive layer includes a plurality of nanotube groups 120; each nanotube group 120 includes a plurality of nanophotosensitive tubes 110, and the plurality of nanophotosensitive tubes 110 are concentrically arranged.

[0025] In this embodiment, a plurality of nano-photosensitive tubes 110 are concentrically arranged to form a nano-tube group 120, and a photosensitive layer film is formed by multiple groups of nano-tube groups 120, which can play the role of a resonant cavity and multiple reflections, thereby enhancing the absorption of light. At the same time, its nano-size effect is also beneficial to the absorption of light, thereby improving the sensitivity of the infrared detector.

[0026] In some feasible embodiments, the plurality of nanotube groups 120 are arranged in an array to form a nanotube array.

[0027] In some feasible embodiments, the nanophototube 110 is made of gallium arsenide (GaAs) material. Gallium arsenide is a black-gray solid with a melting point of 1238°C. It can stably exist in the air below 600°C and is not corroded by non-oxidizing acids. The refractive index of gallium arsenide is 3.57. Gallium arsenide has excellent optical properties, which are mainly reflected in its nanowire crystal structure and photoluminescence spectrum. Of course, in other embodiments, according to actual production requirements, the nanophototube 110 can also be made of other materials with good optical properties, such as cadmium selenide.

[0028] In some feasible embodiments, the number of nanophotosensitive tubes 110 in each nanotube group 120 ranges from 3 to 5. For example, the number of nanophotosensitive tubes 110 in each nanotube group 120 is 4. Of course, in other embodiments, the number of nanophotosensitive tubes 110 in the nanotube group 120 can be set according to actual production requirements. A suitable number of nanophotosensitive tubes 110 in the nanotube group 120 is conducive to the absorption of light, thereby improving the sensitivity of the infrared detector.

[0029] In some feasible embodiments, the inner diameter of the smallest nanophotosensitive tube 110 in each nanotube group 120 ranges from 20 nanometers to 50 nanometers; since the multiple nanophotosensitive tubes 110 are concentrically arranged, the smallest nanophotosensitive tube 110 in the nanotube group 120 is the innermost nanophotosensitive tube 110 in the nanotube group 120. For example, the inner diameter of the smallest nanophotosensitive tube 110 in the nanotube group 120 is 40 nanometers. Of course, in other embodiments, the inner diameter of the smallest nanophotosensitive tube 110 in the nanotube group 120 can be set according to actual production requirements. The inner diameter size of the smallest nanophotosensitive tube 110 in the appropriate nanotube group 120 is conducive to the absorption of light, thereby improving the sensitivity of the infrared detector.

[0030] In some feasible embodiments, the outer diameter of the largest nanophotosensitive tube 110 in each nanotube group 120 ranges from 200 nanometers to 2000 nanometers; since multiple nanophotosensitive tubes 110 are concentrically arranged, the largest nanophotosensitive tube 110 in the nanotube group 120 is the outermost nanophotosensitive tube 110 in the nanotube group 120. For example, the outer diameter of the largest nanophotosensitive tube 110 in the nanotube group 120 is 1000 nanometers. Of course, in other embodiments, the outer diameter of the largest nanophotosensitive tube 110 in the nanotube group 120 can be set according to actual production requirements. The outer diameter size of the largest nanophotosensitive tube 110 in the appropriate nanotube group 120 is conducive to the absorption of light, thereby improving the sensitivity of the infrared detector.

[0031] In some feasible embodiments, the thickness of the nanophototube 110 ranges from 30 nanometers to 100 nanometers. For example, the thickness of the nanophototube 110 is 50 nanometers. Of course, in other embodiments, the thickness of the nanophototube 110 can be set according to actual production requirements. The appropriate thickness of the nanophototube 110 is conducive to the absorption of light, thereby improving the sensitivity of the infrared detector.

[0032] In some feasible embodiments, in each nanotube group 120, the spacing between two adjacent nanophotosensitive tubes 110 ranges from 20 nanometers to 50 nanometers; for two adjacent nanophotosensitive tubes 110, the distance between the outer tube wall of the inner nanophotosensitive tube 110 and the inner tube wall of the outer nanophotosensitive tube 110 is the spacing between the two adjacent nanophotosensitive tubes 110. For example, the number of nanophotosensitive tubes 110 in each nanotube group 120 ranges from 3, the spacing between the innermost nanophotosensitive tube 110 and the middle nanophotosensitive tube 110 is 30 nanometers, and the spacing between the middle nanophotosensitive tube 110 and the outermost nanophotosensitive tube 110 is 30 nanometers. Of course, in other embodiments, the spacing between two adjacent nanophotosensitive tubes 110 can be set according to actual production requirements. The appropriate spacing size between two adjacent nanophotosensitive tubes 110 is conducive to the absorption of light, thereby improving the sensitivity of the infrared detector.

[0033] In some feasible embodiments, the center distance between two adjacent nanotube groups 120 ranges from 690 nanometers to 4000 nanometers; since a plurality of nanophotosensitive tubes 110 are concentrically arranged to form the nanotube group 120, the center of the nanophotosensitive tube 110 is the center of the circle of the nanophotosensitive tube 110. The center distance between two adjacent nanotube groups 120 is the distance between the center of one nanotube group 120 and the center of another nanotube group 120. For example, the center distance between two adjacent nanotube groups 120 is 1000 nanometers. Of course, in other embodiments, the center distance between two adjacent nanotube groups 120 can be set according to actual production requirements. The appropriate center distance size between two adjacent nanotube groups 120 is conducive to the absorption of light, thereby improving the sensitivity of the infrared detector.

[0034] In some feasible embodiments, quantum dots are disposed on the photosensitive layer.

[0035] On the one hand, quantum dots made of silver are arranged on the photosensitive layer, and the diameter of the quantum dots made of silver ranges from 2 nanometers to 5 nanometers. For example, the diameter of the quantum dots made of silver is 3 nanometers; of course, in other embodiments, the diameter of the quantum dots made of silver can be set according to actual production requirements.

[0036] On the other hand, quantum dots made of graphene are arranged on the photosensitive layer, and the diameter of the quantum dots made of graphene ranges from 30 nanometers to 100 nanometers. For example, the diameter of the quantum dots made of graphene is 50 nanometers; of course, in other embodiments, the diameter of the quantum dots made of graphene can be set according to actual production requirements.

[0037] Quantum dots made of silver or graphene can enhance the absorption of incident light, passivate surface defects, reduce surface resistance, and increase the migration rate of photogenerated carriers; at the same time, they can help reduce dark current, thereby improving the performance of infrared detectors.

[0038] In some feasible embodiments, the electrode 200 is made of Au material. Of course, in other embodiments, the electrode 200 can also be made of other materials with good electrical conductivity, such as copper.

[0039] A method for preparing a nanotube-based infrared detector, comprising:

[0040] Step S1, spin coating photoresist on n-type GaAs, and exposing and curing using a template;

[0041] Step S2, cleaning and drying the n-type GaAs to obtain an etched area;

[0042] Step S3, etching the n-type GaAs on the etching area by electrochemical etching to prepare an n-type GaAs nanotube array;

[0043] Step S4, removing the photoresist from the n-type GaAs, cleaning and drying, to form a photosensitive layer sample;

[0044] Step S5, using a vapor deposition machine to vapor deposit 100-300 nanometer Au electrodes 200 on the upper and lower surfaces of the photosensitive layer sample, alloying the electrodes 200 to prepare high-quality micron strips, forming nano-interdigitated electrodes 200, and obtaining an infrared detector.

[0045] Preferably, in order to improve the performance of the infrared detector, Ag with a diameter of 2 to 5 nanometers or graphene quantum dots with a diameter of 30 to 100 nanometers can be added to the photosensitive layer of the n-type GaAs nanotube array to greatly improve the performance of the device.

[0046] The infrared detector prepared by the above method is suitable for photoelectric couplers, gas sensors, intelligent sensors, etc.

[0047] The following is a specific description with reference to Embodiment 1 and Embodiment 2.

[0048] Example 1

[0049] Spin-coat photoresist on n-type GaAs, and use a template to expose and cure. Wash and dry the n-type GaAs to obtain an etched area. Etch the n-type GaAs using electrochemical corrosion to prepare an n-type GaAs nanotube array. Remove the photoresist from the n-type GaAs, wash and dry it to form a photosensitive layer sample. The number of tubes in the concentric nanotube array is 3, the inner diameter of the smallest tube is 20 nanometers, the thickness of the tube is 30 nanometers, the distance between two concentric tubes is 20 nanometers, and the outer diameter of the largest tube is 320 nanometers; the height of the tube is 500 nanometers; the center distance between adjacent concentric tube arrays is 690 nanometers. In the evaporator, 100 nanometer Au electrodes 200 are evaporated on the upper and lower surfaces of the photosensitive layer sample and alloyed to prepare high-quality micron strips to form nano-interdigitated electrodes 200; add Ag quantum dots with a diameter of 2 nanometers to the photosensitive layer of the n-type GaAs nanotube array; and obtain an infrared detector.

[0050] Example 2

[0051] Spin-coat photoresist on n-type GaAs, and use a template to expose and cure. Wash and dry the n-type GaAs to obtain an etched area. Etch the n-type GaAs using electrochemical corrosion to prepare an n-type GaAs nanotube array. Remove the photoresist from the n-type GaAs, wash and dry it to form a photosensitive layer sample. The number of tubes in the concentric nanotube array is 5, the inner diameter of the smallest tube is 50 nanometers, the thickness of the tube is 100 nanometers, the distance between two concentric tubes is 50 nanometers, and the outer diameter of the largest tube is 1500 nanometers; the height of the tube is 2000 nanometers; the center distance between adjacent concentric tube arrays is 4000 nanometers. In the evaporator, 300 nanometer Au electrodes 200 are evaporated on the upper and lower surfaces of the photosensitive layer sample and alloyed to prepare high-quality micron strips to form nano-interdigitated electrodes 200; add graphene quantum dots with a diameter of 100 nanometers to the photosensitive layer of the n-type GaAs nanotube array; and obtain an infrared detector.

[0052] The above is a specific description of the preferred implementation of the present application, but the present application is not limited to the embodiments. Technical personnel familiar with the field can make various equivalent modifications or substitutions without violating the spirit of the present application. These equivalent modifications or substitutions are all included in the scope defined by the claims of the present application.

Claims

1. A nanotube-based infrared detector, characterized in that: include: A photosensitive layer and an electrode; the electrode is arranged on the photosensitive layer; the photosensitive layer comprises a plurality of nanotube groups; Each nanotube group includes a plurality of nanophotosensitive tubes, and the plurality of nanophotosensitive tubes are concentrically arranged.

2. The nanotube-based infrared detector according to claim 1, characterized in that: The nanometer photosensitive tube is made of gallium arsenide material.

3. The nanotube-based infrared detector according to claim 1, characterized in that: The number of nanophotosensitive tubes in each nanotube group ranges from 3 to 5.

4. The nanotube-based infrared detector according to claim 1, characterized in that: The inner diameter of the smallest nanophotosensitive tube in each of the nanotube groups ranges from 20 nanometers to 50 nanometers.

5. The nanotube-based infrared detector according to claim 1, characterized in that: The outer diameter of the largest nanophotosensitive tube in each of the nanotube groups ranges from 200 nanometers to 2000 nanometers.

6. The nanotube-based infrared detector according to claim 1, characterized in that: The thickness of the nano photosensitive tube ranges from 30 nanometers to 100 nanometers.

7. The nanotube-based infrared detector according to claim 1, characterized in that: In each of the nanotube groups, the distance between two adjacent nanophotosensitive tubes ranges from 20 nanometers to 50 nanometers.

8. The nanotube-based infrared detector according to claim 1, characterized in that: The center distance between two adjacent nanotube groups ranges from 690 nanometers to 4000 nanometers.

9. The nanotube-based infrared detector according to claim 1, characterized in that: The photosensitive layer is provided with quantum dots made of silver, and the diameter of the quantum dots made of silver ranges from 2 nanometers to 5 nanometers.

10. The nanotube-based infrared detector according to claim 1, characterized in that: The photosensitive layer is provided with quantum dots made of graphene, and the diameter of the quantum dots made of graphene ranges from 30 nanometers to 100 nanometers.

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