Preparation system of hydrogenated silicon film

Abstract

The utility model discloses a preparation system of a hydrogenated silicon film, which comprises a vacuum coating chamber used for providing a vacuum coating environment; the rotating device is used for driving a coating substrate to rotate and is arranged in the vacuum coating chamber; the argon device is used for providing argon for vacuum coating and is arranged outside the vacuum coating chamber; the hydrogen device is used for providing hydrogen for vacuum coating and is arranged outside the vacuum coating chamber; the ionization device is used for ionizing argon in the mixed gas to form a high-energy plasma beam; the target material device is used for providing a silicon target material for vacuum coating and is arranged in the vacuum coating chamber; wherein the argon device and the hydrogen device are respectively communicated with an ionization device in the vacuum coating chamber. The preparation system can be used for preparing the hydrogenated silicon film.

Description

Technical Field

[0001] The utility model relates to a manufacturing technology of a silicon hydride film, in particular to a manufacturing system of a silicon hydride film. Background Art

[0002] The traditional infrared bandpass filter film is an optical film that alternately coats high and low refractive indexes on an optical substrate using precision optical coating technology, and uses the principle of light correlation to achieve high transmittance in the near-infrared region and cutoff function in the visible light region. With the development of optical communication systems and infrared imaging systems, the traditional infrared bandpass filter film based on the principle of light correlation can no longer meet performance requirements.

[0003] Silicon thin film has high refractive index, high absorption in visible light, and high transmittance in near infrared, so it is expected to become a new type of infrared bandpass filter. However, silicon thin film still has a large absorption in certain bands in near infrared, and its performance still needs to be further improved. Utility Model Content

[0004] In order to solve the above-mentioned deficiencies in the prior art, the utility model provides a system for preparing a hydrogenated silicon film, which can be used for preparing the hydrogenated silicon film.

[0005] The technical problem to be solved by the utility model is achieved through the following technical solutions:

[0006] A system for preparing a hydrogenated silicon film, comprising:

[0007] A vacuum coating chamber, used for providing a vacuum coating environment;

[0008] A rotating device, used for driving the coating substrate to rotate, and arranged in the vacuum coating chamber;

[0009] An argon device, used for providing argon gas for vacuum coating, and arranged outside the vacuum coating chamber;

[0010] A hydrogen device, used for providing hydrogen for vacuum coating, arranged outside the vacuum coating chamber;

[0011] An ionization device, used for ionizing argon gas in the mixed gas to form a high-energy plasma beam;

[0012] A target device, used for providing silicon target material for vacuum coating, arranged in the vacuum coating chamber;

[0013] Wherein, the argon gas device and the hydrogen gas device are respectively connected to the ionization device in the vacuum coating chamber.

[0014] Furthermore, a first flow controller is connected between the argon device and the ionization device.

[0015] Furthermore, a second flow controller is connected between the hydrogen device and the ionization device.

[0016] Furthermore, a third flow controller is provided on the injection port of the ionization device.

[0017] Furthermore, the argon gas device includes an argon gas bottle.

[0018] Furthermore, the hydrogen device includes a hydrogen generator.

[0019] Furthermore, the target device includes a first silicon target and a second silicon target, and the first silicon target and the second silicon target are twin targets.

[0020] Furthermore, in the mixed gas of argon and hydrogen, the volume percentage of hydrogen is 10%-50%.

[0021] Furthermore, the vacuum degree of the vacuum coating chamber is 10*E -4 ~10*E -3 Pa.

[0022] Furthermore, the ionization power of the ionization device is 1KW-4KW, so that the sputtering power of the target device is 6KW-12KW.

[0023] The utility model has the following beneficial effects: the preparation system of the utility model is provided with the hydrogen device, so that the high-purity argon provided by the argon device and the high-purity hydrogen provided by the hydrogen device are introduced into the ionization device for mixing, and the ionization device is used to ionize the argon in the mixed gas to form a high-energy plasma beam, and the high-energy plasma beam is used to bombard the silicon target in the target device, so that the silicon target is sputtered onto the coating substrate to form a simple silicon film, and the hydrogen enters the vacuum coating chamber together with the high-energy plasma beam and reacts with the simple silicon film on the coating substrate, so that the simple silicon film is modified and converted into a hydrogenated silicon film with better photoelectric performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a schematic diagram of the planar structure of the preparation system provided by the utility model. DETAILED DESCRIPTION

[0025] The present invention is described in detail below in conjunction with the accompanying drawings and embodiments, examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0026] In the description of the present invention, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0027] In addition, the terms "first", "second", and "third" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second", and "third" may explicitly or implicitly include one or more of the features. In the description of the present utility model, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0028] In the present invention, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", "fix", "set" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0029] Embodiment 1

[0030] like Figure 1 As shown, a system for preparing a hydrogenated silicon film comprises:

[0031] The vacuum coating chamber 10 is used to provide a vacuum coating environment;

[0032] A rotating device 20, used for driving the coating substrate to rotate, and disposed in the vacuum coating chamber 10;

[0033] An argon device 30, used for providing argon gas for vacuum coating, is arranged outside the vacuum coating chamber 10;

[0034] A hydrogen device 40, used for providing hydrogen for vacuum coating, is arranged outside the vacuum coating chamber 10;

[0035] The ionization device 50 is used to ionize the argon gas in the mixed gas to form a high-energy plasma beam;

[0036] A target device 60, used for providing a silicon target for vacuum coating, is disposed in the vacuum coating chamber 10;

[0037] The argon device 30 and the hydrogen device 40 are respectively connected to the ionization device 50 in the vacuum coating chamber 10 .

[0038] The preparation system of the utility model is provided with the hydrogen device 40, so that the high-purity argon provided by the argon device 30 and the high-purity hydrogen provided by the hydrogen device 40 are introduced into the ionization device 50 for mixing, and the ionization device 50 is used to ionize the argon in the mixed gas to form a high-energy plasma beam, and the high-energy plasma beam is used to bombard the silicon target in the target device 60, so that the silicon target is sputtered onto the coating substrate 100 to form a single silicon film, and the hydrogen enters the vacuum coating chamber 10 together with the high-energy plasma beam, and reacts with the single silicon film on the coating substrate 100, so that the single silicon film is modified and converted into a hydrogenated silicon film with better photoelectric performance.

[0039] When making the hydrogenated silicon film, the following steps are included:

[0040] Placing a plurality of coating substrates 100 on a rotating device 20 in the vacuum coating chamber 10;

[0041] The vacuum coating chamber 10 is evacuated until the coating vacuum degree reaches a preset value;

[0042] Turn on the argon device 30, the hydrogen device 40, the ionization device 50 and the rotating device 20 at the same time;

[0043] The argon device 30 and the hydrogen device 40 respectively pass argon and hydrogen into the ionization device 50 for mixing. The ionization device 50 ionizes the argon in the mixed gas to form a high-energy plasma beam, and then passes it into the vacuum coating chamber 10 together with the hydrogen.

[0044] The high-energy plasma beam formed by the argon gas bombards the silicon target in the target device 60 under the action of the electric field, so that the silicon target is sputtered into the vacuum coating chamber 10;

[0045] The rotating device 20 drives each coated substrate 100 to rotate, so that each coated substrate 100 first faces the target material device 60 and then faces the ionization device 50 during rotation. When the coated substrate 100 rotates to face the target material device 60, the silicon target material is sputtered onto the surface of the coated substrate 100 to form the elemental silicon thin film. When the coated substrate 100 rotates to face the ionization device 50, the hydrogen gas is ejected toward the elemental silicon thin film on the coated substrate 100 to modify the elemental silicon thin film on the coated substrate 100 and convert it into the hydrogenated silicon thin film.

[0046] In this embodiment, the vacuum degree of the vacuum coating chamber 10 is 10*E -4 ~10*E -3 Pa around.

[0047] Preferably, a first flow controller 70 is connected between the argon device 30 and the ionization device 50 , and a second flow controller 80 is connected between the hydrogen device 40 and the ionization device 50 .

[0048] The preparation system of the present invention can adjust the mixing ratio of argon and hydrogen by controlling the flow ratio between the first flow controller 70 and the second flow controller 80, so that the volume percentage of hydrogen in the mixed gas of argon and hydrogen is about 10%-50%.

[0049] Preferably, a third flow controller 90 is provided on the injection port of the ionization device 50 .

[0050] The preparation system of the present invention can adjust the amount of high-energy plasma beam and hydrogen ejected outward from the ionization device 50 by controlling the flow rate of the third flow controller 90, so that when the ionization power of the ionization device 50 is about 1KW-4KW, the sputtering power of the silicon target in the target device 60 under the bombardment of the high-energy plasma beam reaches about 6KW-12KW.

[0051] In this embodiment, the argon device 30 includes an argon cylinder filled with compressed high-purity argon; the hydrogen device 40 includes a hydrogen generator that generates high-purity hydrogen by electrolyzing water or other chemical methods.

[0052] Preferably, the target device 60 includes a first silicon target 61 and a second silicon target 62, and the first silicon target 61 and the second silicon target 62 are twin targets.

[0053] The preparation system of the present invention adopts twin targets to produce the hydrogenated silicon film. The first silicon target 61 and the second silicon target 62 are arranged adjacent to each other and are made of the same material, namely amorphous silicon, so as to improve the utilization rate of the target material during sputtering film formation and improve the uniformity of the film. The sputtering process can be optimized by adjusting the distance and relative position between the first silicon target 61 and the second silicon target 62.

[0054] The rotating device 20 includes a rotating shaft 21 and a rotating seat 22 coaxially arranged on the rotating shaft 21 , and each coating substrate 100 is evenly arranged on a side surface of the rotating seat 22 along the rotating direction.

[0055] In this embodiment, the side surface of the rotating seat 22 is formed by connecting a plurality of planes in sequence, one plane corresponds to one coating substrate 100 , and each coating substrate 100 is arranged on the corresponding plane.

[0056] The coating substrate 100 can be fixed on the side of the rotating seat 22 by arranging structures such as a suction cup, a robot or a slot.

[0057] The ionization device 50 and the target device 60 are both disposed on the inner wall of the vacuum coating chamber 10 and distributed on two opposite sides of the rotating seat 22 .

[0058] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the embodiments of the utility model rather than to limit them. Although the embodiments of the utility model are described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the embodiments of the utility model can still be modified or replaced by equivalents, and these modifications or equivalent replacements cannot cause the modified technical solutions to deviate from the scope of the technical solutions of the embodiments of the utility model.

Claims

1. A system for preparing a hydrogenated silicon thin film, characterized in that: include: A vacuum coating chamber, used for providing a vacuum coating environment; A rotating device, used for driving the coating substrate to rotate, and arranged in the vacuum coating chamber; An argon device, used for providing argon gas for vacuum coating, and arranged outside the vacuum coating chamber; A hydrogen device, used for providing hydrogen for vacuum coating, arranged outside the vacuum coating chamber; An ionization device, used for ionizing argon gas in the mixed gas to form a high-energy plasma beam; A target device, used for providing silicon target material for vacuum coating, arranged in the vacuum coating chamber; Wherein, the argon gas device and the hydrogen gas device are respectively connected to the ionization device in the vacuum coating chamber.

2. The preparation system according to claim 1, characterized in that: A first flow controller is connected between the argon device and the ionization device.

3. The preparation system according to claim 1, characterized in that: A second flow controller is connected between the hydrogen device and the ionization device.

4. The preparation system according to claim 1, characterized in that: A third flow controller is provided on the injection port of the ionization device.

5. The preparation system according to claim 1, characterized in that: The argon gas device comprises an argon gas bottle.

6. The preparation system according to claim 1, characterized in that: The hydrogen device comprises a hydrogen generator.

7. The preparation system according to claim 1, characterized in that: The target material device comprises a first silicon target material and a second silicon target material, and the first silicon target material and the second silicon target material are twin targets.

8. The preparation system according to claim 1, characterized in that: In the mixed gas of argon and hydrogen, the volume percentage of the hydrogen is 10%-50%.

9. The preparation system according to claim 1, characterized in that: The vacuum degree of the vacuum coating chamber is 10*E -4 ~10*E -3 Pa.

10. The preparation system according to claim 1, characterized in that: The ionization power of the ionization device is 1KW-4KW, so that the sputtering power of the target device is 6KW-12KW.

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