High-temperature ion implanter

Abstract

The utility model relates to the technical field of semiconductor manufacturing, and particularly discloses a high-temperature ion implanter which comprises an ion implantation mechanism, a bearing mechanism and a feeding mechanism, the bearing mechanism comprises a base, a rotating power piece, a rotating disc and a fixing assembly, the rotating power piece is arranged on the base, and the rotating disc is arranged on the base; the rotating disc is coaxially and fixedly connected to the output end of the rotating power part, a plurality of containing grooves used for containing silicon wafers are annularly formed in the top face of the rotating disc, the rotating disc is located below an outlet of the ion implantation mechanism, and the fixing assembly is arranged between the rotating disc and the base and used for fixing the silicon wafers placed in the containing grooves. The feeding mechanism comprises a mechanical arm arranged on one side of the rotating disc, and the mechanical arm is used for feeding and discharging of silicon wafers. The influence of the feeding and discharging process of the silicon wafer on the production efficiency can be weakened.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a high-temperature ion implanter. Background Art

[0002] An ion implanter is a device used in the semiconductor production process. Its principle is to generate a variety of ions through an ion source, and then screen the multiple ions through a magnetic analyzer. Finally, the useful target ions form an ion beam. The ion beam can be directly injected into the silicon wafer after being accelerated by an accelerating magnetic field.

[0003] In the related art, a Chinese patent with publication number CN220543834U discloses an anti-deviation device for an ion implanter, the technical highlights of which are: it includes a processing table, a hollow cylinder is rotatably connected to the inner side of the processing table, and a target disk is fixed to the inner side of the upper end of the hollow cylinder; a rotating component is arranged on the inner side of the processing table and located on one side of the hollow cylinder; a fastening component is arranged on the inner side of the target disk, and a clamping component is arranged on the inner side of the hollow cylinder.

[0004] In the above device, only one silicon wafer can be fixed and ions can be injected at a time. After the ion injection process is completed, the silicon wafer needs to be taken out, and then the next silicon wafer is put in and fixed again, and then the ions are injected again. Therefore, the interval time between the two ion injections is long, which will affect the production efficiency during continuous production. Utility Model Content

[0005] In order to reduce the impact of loading and unloading of silicon wafers on production efficiency, the present application provides a high-temperature ion implanter.

[0006] The high temperature ion implanter provided in this application adopts the following technical solution:

[0007] A high-temperature ion implanter comprises an ion implantation mechanism, a bearing mechanism and a feeding mechanism, wherein the bearing mechanism comprises a base, a rotating power member, a turntable and a fixing assembly, wherein the rotating power member is arranged on the base, the turntable is coaxially fixedly connected to the output end of the rotating power member, a plurality of receiving grooves for placing silicon wafers are arranged on the top surface of the turntable, the turntable is located below the outlet of the ion implantation mechanism, the fixing assembly is arranged between the turntable and the base, and is used to fix the silicon wafers placed in the receiving grooves, and the feeding mechanism comprises a mechanical arm arranged on one side of the turntable, and the mechanical arm is used for loading and unloading silicon wafers.

[0008] By adopting the above technical solution, when one of the silicon wafers completes ion implantation, the turntable rotates, causing the silicon wafer to rotate to the next workstation. At this time, the other silicon wafer that has been fixed and completed is rotated to the ion implantation workstation. Therefore, the time interval between the ion implantation of the two silicon wafers is shorter, which helps to improve time utilization and thus improve production efficiency.

[0009] Optionally, the fixing assembly includes a connecting block, a connecting rod, a slider, a locking component and a driving component. The connecting block is slidably set on the bottom wall of the turntable along the axial direction of the turntable. The connecting rods and sliders are provided in multiple and the number is the same. Each slider corresponds to a connecting rod. The two ends of the connecting rod are respectively rotatably connected to the connecting block and the slider. The slider is slidably set on the bottom wall of the accommodating groove. The slider is used to resist the silicon wafer placed in the accommodating groove. The locking component is set between the connecting block and the turntable. The locking component is used to fix the connecting block on the turntable. The driving component is used to drive the connecting block to slide.

[0010] By adopting the above technical solution, the driving component drives the connecting block to move downward, and the connecting block drives multiple sliders to approach each other through the connecting rod until the slider is pressed against the silicon wafer placed in the accommodating groove, thereby completing the fixation of the silicon wafer; at this time, the locking component fixes the connecting block on the turntable, so that the slider is kept in a pressed state, which helps to ensure the fixation effect of the silicon wafer; when the driving component causes the connecting block to move upward, the connecting block drives multiple sliders to move away from each other through the connecting rod, so that the slider and the silicon wafer are separated, thereby canceling the fixation of the silicon wafer, making it convenient for the silicon wafer to be taken out later.

[0011] Optionally, the driving component includes a first guide rod, a second guide rod and a connecting column, the first guide rod and the second guide rod are fixedly connected to the base and located on the outside of the turntable, the connecting column is fixedly connected to the connecting block, when the connecting column and the first guide rod are abutted, the rotation of the turntable causes the connecting block to move downward, and when the connecting column and the second guide rod are abutted, the rotation of the turntable causes the connecting block to move upward.

[0012] By adopting the above technical solution, under the action of the first guide rod, the rotation of the turntable can move the connecting block downward, and under the action of the second guide rod, the rotation of the turntable can move the connecting block upward. Therefore, the rise and fall of the connecting block can be driven by the rotation of the turntable, without setting up other additional power sources, which is more energy-saving.

[0013] Optionally, the locking component includes a first magnetic component and a second magnetic component, the first magnetic component is fixedly connected to the connecting block, the second magnetic component is fixedly connected to the bottom wall of the turntable, and the magnetic poles of the first magnetic component and the second magnetic component on one side close to each other have opposite directions.

[0014] By adopting the above technical solution, when the first magnetic member and the second magnetic member abut against each other, the first magnetic member and the second magnetic member are attracted together, thereby limiting the movement of the connecting block, so that the slider remains in a state of pressing against the side wall of the silicon wafer.

[0015] Optionally, an arc plate is provided on one side of the slider close to the center of the accommodating groove, and the arc plate is slidably arranged on the slider along the sliding direction of the slider. The arc plate is used to resist the silicon wafer placed in the accommodating groove, and an elastic member is connected between the slider and the arc plate, and the elastic member makes the arc plate tend to slide toward the side away from the slider.

[0016] By adopting the above technical solution, after multiple sliders slide toward one side close to each other, the arc plate can be pressed against the side wall of the silicon wafer under the action of the elastic member, converting the rigid contact into flexible contact, thereby helping to enhance the fixing effect of the silicon wafer and avoiding damage to the silicon wafer.

[0017] Optionally, a mounting plate is provided between the slider and the arc plate, the mounting plate is slidably provided on the slider, the elastic member is connected between the slider and the mounting plate, and the arc plate is detachably connected to the mounting plate.

[0018] By adopting the above technical solution, the arc-shaped plates can be detachably connected, so that arc-shaped plates of suitable shapes can be selected according to needs, so as to adapt to silicon wafers of different sizes, and the adaptability is stronger.

[0019] Optionally, a screw barrel is fixedly connected to one side of the mounting plate away from the arc plate, an adjusting bolt is passed through the slider, the adjusting bolt and the slider are threadedly connected, one end of the adjusting bolt passing through the slider is threadedly connected to the screw barrel, and the head of the adjusting bolt abuts against the slider.

[0020] By adopting the above technical solution, the distance between the slider and the mounting plate can be adjusted by rotating the adjusting bolt, thereby adjusting the deformation of the elastic member, and the elastic force can be adjusted as needed.

[0021] Optionally, a heating mechanism is fixedly connected to the base, and the heating mechanism is located on one side of the ion implantation mechanism and is used to heat the silicon wafer placed in the receiving groove.

[0022] By adopting the above technical solution, when ions are injected into the silicon carbide substrate, the silicon carbide substrate is prone to produce crystal defects due to the injection of ions. Before the ion injection, the silicon carbide substrate is heated to above 500°C. Ion injection under high temperature conditions can effectively reduce the generation of crystal defects. Therefore, this device can not only perform ion injection on silicon wafer substrates, but also on silicon carbide substrates, and has stronger applicability.

[0023] Optionally, a cooling mechanism is fixedly connected to the base, and the cooling mechanism is located on a side of the ion implantation mechanism away from the heating mechanism, and is used to cool the silicon wafer after ion implantation.

[0024] By adopting the above technical solution, after the ion implantation of the silicon carbide substrate is completed, the silicon carbide substrate can be cooled by a cooling mechanism, thereby facilitating the processing of the next step.

[0025] Optionally, a preheating mechanism is fixedly connected to the base, and the preheating mechanism is located on a side of the heating mechanism away from the ion implantation mechanism, and is used to preheat the silicon wafer placed in the receiving groove.

[0026] By adopting the above technical solution, the silicon carbide substrate can be preheated before heating the silicon carbide substrate, thereby reducing the thermal stress of the silicon carbide substrate during the heating process and reducing the adverse effects on the silicon carbide substrate.

[0027] In summary, the present application includes at least one of the following beneficial technical effects:

[0028] 1. After the ion implantation of the silicon wafer substrate at the ion implantation station is completed, the turntable rotates a certain angle so that the silicon wafer after ion implantation moves to the next station, and the silicon wafer that was originally in front of the ion implantation station and has been fixed moves to the ion implantation station for ion implantation; therefore, the process of loading and unloading the silicon wafer and fixing the silicon wafer can be carried out during the ion implantation process, thereby shortening the time interval between two ion implantations and helping to improve production efficiency.

[0029] 2. When the turntable rotates, the connection block can be lowered or raised, thereby clamping or loosening the silicon wafer placed in the receiving groove. The process of fixing the silicon wafer and canceling the fixation can be driven by the rotation of the turntable, without setting up an additional power source, thus being more energy-efficient. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 It is a structural schematic diagram of an embodiment of the present application for demonstrating a bearing mechanism;

[0031] Figure 2 It is a schematic diagram of the structure at the top of the embodiment of the present application;

[0032] Figure 3 yes Figure 2 The enlarged schematic diagram of point A in the middle;

[0033] Figure 4 It is a schematic diagram of the structure of the fixing assembly in the embodiment of the present application;

[0034] Figure 5 It is a schematic diagram of the structure of the driving component in the embodiment of the present application;

[0035] Figure 6 It is a schematic diagram of the overall structure of an embodiment of the present application.

[0036] Reference numerals: 1, ion implantation mechanism; 2, bearing mechanism; 21, base; 211, mounting rod; 22, rotating power member; 221, rotating rod; 23, rotating disk; 231, receiving groove; 232, sliding groove; 24, fixing assembly; 241, connecting block; 242, connecting rod; 243, sliding block; 244, locking member; 2441, first magnetic member; 2442, second magnetic member; 245, driving member; 2451, first guide rod; 2452, second guide rod Toward rod; 2453, connecting column; 3, feeding mechanism; 4, arc plate; 5, elastic member; 6, mounting plate; 61, screw barrel; 7, adjusting bolt; 8, heating mechanism; 9, cooling mechanism; 10, preheating mechanism; 11, loading and unloading station; 12, preheating station; 13, heating station; 14, ion implantation station; 15, cooling station; 16, support rod; 161, vertical rod; 162, horizontal rod; 17, first magnet block; 18, second magnet block; 19, silicon wafer. DETAILED DESCRIPTION

[0037] The following is combined with Figure 1-6 This application is described in further detail.

[0038] The present application embodiment discloses a high temperature ion implanter. Figure 1 The high temperature ion implanter comprises an ion implantation mechanism 1, a carrier mechanism 2 and a feeding mechanism 3. The ion implantation mechanism 1 and the feeding mechanism 3 are respectively arranged on both sides of the carrier mechanism 2. The ion implantation mechanism 1 is used to implant ions into the silicon wafer 19 substrate; the carrier mechanism 2 is used to place the silicon wafer 19 and drive the silicon wafer 19 to move; the feeding mechanism 3 is a mechanical arm, which is used for loading and unloading the silicon wafer 19.

[0039] Reference Figure 1 and Figure 2 The supporting mechanism 2 includes a base 21, a rotating power member 22, a turntable 23 and a fixed assembly 24. The base 21 is arranged horizontally, and the rotating power member 22 is a motor. The rotating power member 22 is fixedly connected to the top surface of the base 21, and the output shaft of the rotating power member 22 is vertically upward. The end of the output shaft of the rotating power member 22 is coaxially fixedly connected to a rotating rod 221; the turntable 23 is a circular disk, and the turntable 23 is coaxially fixedly connected to the top of the rotating rod 221. A receiving groove 231 for placing the silicon wafer 19 is provided on the top surface of the turntable 23, and the receiving groove 231 is a circular groove; there are a plurality of receiving grooves 231, and they are arranged in a circular array. The turntable 23 is located below the ion implantation mechanism 1, so that the ion implantation mechanism 1 can inject ions into the silicon wafer 19 in the receiving groove 231 below.

[0040] Reference Figure 3 , Figure 4 and Figure 5The fixing assembly 24 includes a connecting block 241, a connecting rod 242, a slider 243, a locking component 244 and a driving component 245. There are multiple connecting blocks 241, and the number of connecting blocks 241 is the same as the number of receiving slots 231. Each connecting block 241 corresponds to a receiving slot 231. The connecting block 241 is located below the corresponding receiving slot 231 on the rotating disk 23, and the connecting block 241 is slidably arranged on the bottom wall of the rotating disk 23 in the vertical direction. There are multiple connecting rods 242, and every three connecting rods 242 correspond to one connecting block 241. The number of sliders 243 is the same as the number of connecting rods 242, and each slider 243 corresponds to a connecting rod 242; the slider 243 is arranged on the bottom wall of the receiving groove 231, the top of the slider 243 is located inside the receiving groove 231, and the bottom of the slider 243 is located below the rotating disk 23; a sliding groove 232 is provided on the bottom wall of the receiving groove 231 along the radial direction of the receiving groove 231, and there are three sliding grooves 232 arranged in a circular array; each slider 243 is slidably arranged in a corresponding sliding groove 232. The bottom end of the connecting rod 242 is hinged to the connecting block 241, the top end of the connecting rod 242 is hinged to the bottom end of the slider 243, and the hinge shafts at both ends of the connecting rod 242 are both arranged horizontally, and the hinge shafts at both ends of the connecting rod 242 are parallel.

[0041] Therefore, under the restriction of the slide groove 232 on the slider 243, when the connecting block 241 moves downward, the slider 243 can be driven by the connecting rod 242 to slide toward the inner side of the accommodating groove 231, so that multiple sliders 243 are pressed against the silicon wafer 19 placed in the accommodating groove 231 to fix the silicon wafer 19; when the connecting block 241 moves upward, the slider 243 can be driven by the connecting rod 242 to slide toward the side away from the center of the accommodating groove 231, so that the slider 243 is out of contact with the silicon wafer 19, thereby canceling the fixation of the silicon wafer 19.

[0042] Reference Figure 4 The locking component 244 includes a first magnetic component 2441 and a second magnetic component 2442. The first magnetic component 2441 is fixedly connected to the bottom wall of the connecting block 241; a support rod 16 is fixedly connected to the bottom wall of the turntable 23, and a plurality of support rods 16 are provided, and each support rod 16 corresponds to a connecting block 241. The support rod 16 includes a vertical rod 161 fixedly connected to the bottom wall of the turntable 23 and a horizontal rod 162 fixedly connected to the vertical rod 161, and two horizontal rods 162 are provided and arranged at intervals in the vertical direction. One of the horizontal rods 162 is located below the connecting block 241, and the other horizontal rod 162 is located above the connecting block 241. The second magnetic component 2442 is fixedly connected to the horizontal rod 162 located below the connecting block 241. The first magnetic member 2441 and the second magnetic member 2442 are both magnets, and the magnetic poles of the first magnetic member 2441 and the second magnetic member 2442 that are close to each other are in opposite directions, so the first magnetic member 2441 and the second magnetic member 2442 can be attracted together.

[0043] When the connecting block 241 moves downward and causes the slider 243 and the silicon wafer 19 to abut against each other, the first magnetic member 2441 and the second magnetic member 2442 are in a state of mutual attraction, thereby limiting the movement of the connecting block 241 and fixing the slider 243 at the current position, thereby helping to ensure the fixing effect on the silicon wafer 19.

[0044] In addition, a first magnet block 17 is fixedly connected to the top wall of the connecting block 241, and a second magnet block 18 is fixedly connected to the horizontal rod 162 located above the connecting block 241, and the magnetic poles of the first magnet block 17 and the second magnet block 18 on the side close to each other are in opposite directions, so when the connecting block 241 moves upward, the first magnet block 17 and the second magnet block 18 can be attracted together, thereby fixing the connecting block 241 in the current position; at this time, the slider 243 is in a state separated from the silicon wafer 19.

[0045] Reference Figure 5 The driving component 245 includes a first guide rod 2451, a second guide rod 2452 and a connecting column 2453. A mounting rod 211 is fixedly connected to the top wall of the base 21. Two mounting rods 211 are provided, corresponding to the first guide rod 2451 and the second guide rod 2452 respectively; the first guide rod 2451 and the second guide rod 2452 are both fixedly connected to the top of the corresponding mounting rod 211. The extension direction of the first guide rod 2451 and the second guide rod 2452 are both part of the spiral line. The connecting column 2453 is fixedly connected to the connecting block 241. The connecting column 2453 is located on the side of the connecting block 241 away from the center of the turntable 23, and the length direction of the connecting column 2453 is parallel to the radial direction of the turntable 23. Therefore, during the rotation of the turntable 23, when the connecting column 2453 and the bottom side of the first guide rod 2451 abut against each other, the rotation of the turntable 23 causes the connecting column 2453 to move downward, so that the multiple sliders 243 approach each other, thereby fixing the silicon wafer 19; when the connecting column 2453 and the top side of the second guide rod 2452 abut against each other, the rotation of the turntable 23 causes the connecting column 2453 to move upward, so that the multiple sliders 243 move away from each other, thereby canceling the fixation of the silicon wafer 19.

[0046] Among them, refer to Figure 3, a mounting plate 6 is provided on the top of the slider 243 near the center of the receiving groove 231. The mounting plate 6 is located in the receiving groove 231 and is slidably provided on the slider 243 along the sliding direction of the slider 243; an arc plate 4 is provided on the side of the mounting plate 6 away from the slider 243. The shape of the arc plate 4 is adapted to the silicon wafer 19, and the side of the arc plate 4 away from the mounting plate 6 can be against the outer wall of the silicon wafer 19. An elastic member 5 is fixedly connected between the mounting plate 6 and the slider 243. The elastic member 5 is a spring. The elastic member 5 is in a compressed state, so that the elastic member 5 makes the arc plate 4 have a tendency to slide toward the side away from the slider 243. The setting of the elastic member 5 transforms the rigid contact between the slider 243 and the silicon wafer 19 into a flexible contact between the arc plate 4 and the silicon wafer 19, thereby helping to enhance the fixing effect of the silicon wafer 19.

[0047] The arc plate 4 and the mounting plate 6 are detachably connected by bolts, so a suitable arc plate 4 can be selected and installed according to the size of the silicon wafer 19 .

[0048] Furthermore, a screw barrel 61 is fixedly connected to one side of the mounting plate 6 close to the slider 243, the length direction of the screw barrel 61 is parallel to the sliding direction of the slider 243, and an internal thread is arranged in the screw barrel 61; an adjusting bolt 7 is passed through the slider 243, the head of the adjusting bolt 7 is located on the side of the slider 243 away from the mounting plate 6, the other end of the adjusting bolt 7 passes through the slider 243, and one end of the adjusting bolt 7 passing through the slider 243 is threadedly connected to the screw barrel 61. The head of the adjusting bolt 7 is pressed against the slider 243, so that the distance between the slider 243 and the mounting plate 6 can be changed by rotating the adjusting bolt 7, thereby adjusting the elastic force of the elastic member 5.

[0049] Reference Figure 6 In this embodiment, there are five receiving grooves 231 on the turntable 23, and the five receiving grooves 231 correspond to five workstations; along the circumference of the turntable 23, the five workstations are the loading and unloading workstation 11, the preheating workstation 12, the heating workstation 13, the ion implantation workstation 14 and the cooling workstation 15. A preheating mechanism 10 is fixedly connected to the base 21, and the preheating end of the preheating mechanism 10 is located above the turntable 23 and at the preheating workstation 12. A heating mechanism 8 is fixedly connected to the base 21, and the heating end of the heating mechanism 8 is located above the turntable 23 and at the heating workstation 13. The preheating mechanism 10 and the heating mechanism 8 have the same structure, both of which are in the form of a resistance heater and a fan. The difference is that the working temperature of the preheating mechanism 10 is lower than the working temperature of the heating mechanism 8. A cooling mechanism 9 is also fixedly connected to the base 21 . The cooling mechanism 9 is located above the turntable 23 and at the cooling station 15 . The cooling mechanism 9 is a cooling fan, and the air outlet side faces the cooling station 15 .

[0050] It should be noted that the first guide rod 2451 is located between the loading and unloading station 11 and the preheating station 12, so that in the process of the silicon wafer 19 in the loading and unloading station 11 moving to the preheating station 12, each arc plate 4 gradually slides to the side close to each other until the silicon wafer 19 is tightly fixed; the second guide rod 2452 is located between the cooling station 15 and the loading and unloading station 11, so in the process of the silicon wafer 19 in the cooling station 15 moving to the loading and unloading station 11, each arc plate 4 gradually slides to the side away from each other, so that the arc plate 4 is out of contact with the silicon wafer 19, canceling the fixation of the silicon wafer 19, making it convenient for the robot arm to take out the silicon wafer 19 in the loading and unloading station 11 and put in a new silicon wafer 19.

[0051] The implementation principle of a high-temperature ion implanter in the embodiment of the present application is as follows: a silicon wafer 19 is placed inside each of the five receiving slots 231; during operation, ions are implanted into the silicon wafer 19 in the ion implantation station 14, and at the same time, the silicon wafer 19 in the preheating station 12 is preheated, the silicon wafer 19 in the heating station 13 is heated, and the silicon wafer 19 in the cooling station 15 is cooled. When the ion implantation process is completed, the turntable 23 rotates so that the silicon wafer 19 in each station moves to the next adjacent station, and then performs the corresponding operation.

[0052] When the turntable 23 rotates, the connecting block 241 and the connecting column 2453 rotate. When the connecting column 2453 and the bottom wall of the first guide rod 2451 are against each other, the connecting column 2453 drives the connecting block 241 to move downwards as the connecting column 2453 rotates. The connecting block 241 drives the arc plates 4 to slide toward the side close to each other through the connecting rod 242 until the silicon wafer 19 placed in the receiving groove 231 is pressed tightly, the silicon wafer 19 is fixed, and the stability of the silicon wafer 19 in the subsequent processing process is improved. When the connecting column 2453 and the top wall of the second guide rod 2452 are against each other, the connecting column 2453 drives the connecting block 241 to move upwards as the connecting column 2453 rotates. The connecting block 241 drives the arc plates 4 to slide toward the side away from each other through the connecting rod 242, so that the arc plates 4 are out of contact with the silicon wafer 19, and the fixation of the silicon wafer 19 is cancelled, so that the silicon wafer 19 can be taken out and a new silicon wafer 19 can be put in by the robot arm later.

[0053] The above are optional embodiments of the present application, and are not intended to limit the protection scope of the present application. Therefore, any equivalent changes made based on the structure, shape, and principle of the present application should be included in the protection scope of the present application.

Claims

1. A high temperature ion implanter, characterized in that: The invention comprises an ion implantation mechanism (1), a supporting mechanism (2) and a feeding mechanism (3); the supporting mechanism (2) comprises a base (21), a rotating power member (22), a turntable (23) and a fixing assembly (24); the rotating power member (22) is arranged on the base (21); the turntable (23) is coaxially fixedly connected to the output end of the rotating power member (22); a plurality of receiving grooves (231) for receiving silicon wafers (19) are arranged on the top surface of the turntable (23); the turntable (23) is located below the outlet of the ion implantation mechanism (1); the fixing assembly (24) is arranged between the turntable (23) and the base (21) and is used to fix the silicon wafers (19) placed in the receiving grooves (231); and the feeding mechanism (3) comprises a mechanical arm arranged on one side of the turntable (23); the mechanical arm is used to load and unload the silicon wafers (19).

2. A high temperature ion implanter according to claim 1, characterized in that: The fixing assembly (24) comprises a connecting block (241), a connecting rod (242), a sliding block (243), a locking component (244) and a driving component (245); the connecting block (241) is slidably arranged on the bottom wall of the rotating disk (23) along the axial direction of the rotating disk (23); a plurality of connecting rods (242) and sliding blocks (243) are provided and the number of the connecting rods (242) and sliding blocks (243) are the same; each sliding block (243) corresponds to a connecting rod (242); and both ends of the connecting rod (242) are respectively connected to the connecting block (241). The connecting block (241) and the rotating disk (23) are rotatably connected, the sliding block (243) is slidably arranged on the bottom wall of the accommodating groove (231), the sliding block (243) is used to abut against the silicon wafer (19) placed in the accommodating groove (231), the locking component (244) is arranged between the connecting block (241) and the rotating disk (23), the locking component (244) is used to fix the connecting block (241) on the rotating disk (23), and the driving component (245) is used to drive the connecting block (241) to slide.

3. A high temperature ion implanter according to claim 2, characterized in that: The driving component (245) comprises a first guide rod (2451), a second guide rod (2452) and a connecting column (2453); the first guide rod (2451) and the second guide rod (2452) are both fixedly connected to the base (21) and located outside the rotating disk (23); the connecting column (2453) is fixedly connected to the connecting block (241); when the connecting column (2453) and the first guide rod (2451) are in contact with each other, the rotating disk (23) rotates so that the connecting block (241) moves upward; when the connecting column (2453) and the second guide rod (2452) are in contact with each other, the rotating disk (23) rotates so that the connecting block (241) moves downward.

4. A high temperature ion implanter according to claim 2, characterized in that: The locking component (244) comprises a first magnetic component (2441) and a second magnetic component (2442), wherein the first magnetic component (2441) is fixedly connected to the connecting block (241), and the second magnetic component (2442) is fixedly connected to the bottom wall of the rotating disk (23), and the magnetic poles of the first magnetic component (2441) and the second magnetic component (2442) on a side close to each other have opposite directions.

5. A high temperature ion implanter according to claim 2, characterized in that: An arc plate (4) is provided on one side of the slider (243) close to the center of the receiving groove (231); the arc plate (4) is slidably provided on the slider (243) along the sliding direction of the slider (243); the arc plate (4) is used to abut against a silicon wafer (19) placed in the receiving groove (231); an elastic member (5) is connected between the slider (243) and the arc plate (4); the elastic member (5) causes the arc plate (4) to have a tendency to slide towards a side away from the slider (243).

6. A high temperature ion implanter according to claim 5, characterized in that: A mounting plate (6) is provided between the slider (243) and the arc-shaped plate (4); the mounting plate (6) is slidably arranged on the slider (243); the elastic member (5) is connected between the slider (243) and the mounting plate (6); and the arc-shaped plate (4) is detachably connected to the mounting plate (6).

7. A high temperature ion implanter according to claim 6, characterized in that: A screw barrel (61) is fixedly connected to a side of the mounting plate (6) away from the arc-shaped plate (4); an adjusting bolt (7) is passed through the slider (243); the adjusting bolt (7) and the slider (243) are threadedly connected; one end of the adjusting bolt (7) passing through the slider (243) is threadedly connected to the screw barrel (61); and the head of the adjusting bolt (7) abuts against the slider (243).

8. A high temperature ion implanter according to claim 1, characterized in that: A heating mechanism (8) is fixedly connected to the base (21); the heating mechanism (8) is located on one side of the ion implantation mechanism (1) and is used to heat the silicon wafer (19) placed in the receiving groove (231).

9. A high temperature ion implanter according to claim 8, characterized in that: A cooling mechanism (9) is fixedly connected to the base (21); the cooling mechanism (9) is located on a side of the ion implantation mechanism (1) away from the heating mechanism (8) and is used to cool the silicon wafer (19) after ion implantation.

10. A high temperature ion implanter according to claim 8, characterized in that: A preheating mechanism (10) is fixedly connected to the base (21); the preheating mechanism (10) is located on a side of the heating mechanism (8) away from the ion implantation mechanism (1) and is used to preheat a silicon wafer (19) placed in the receiving groove (231).

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