Device for preparing thin film layer

Abstract

The utility model provides a device for preparing a thin film layer. The device for preparing the thin film layer comprises a plurality of cavities and film forming equipment, the cavities comprise a transfer cavity, a film forming cavity and an annealing cavity, and the film forming equipment is located in the film forming cavity; a first isolation part used for controlling the communication state of the film forming cavity and the transfer cavity is arranged between the film forming cavity and the transfer cavity, and a second isolation part used for controlling the communication state of the film forming cavity and the transfer cavity is arranged between the annealing cavity and the transfer cavity; the device for preparing the thin film layer is provided with an air hole communicated with the transfer cavity so as to replace air in the transfer cavity.

Description

Technical Field

[0001] The present application relates to the technical field of film forming equipment, and in particular to a device for preparing a thin film layer. Background Art

[0002] Magnetron sputtering equipment is a commonly used film forming equipment, which can be used to form a thin film on a structure to be formed, such as a chip. In order to improve the quality of the formed thin film, after the thin film is formed by the magnetron sputtering equipment, an annealing treatment is required by an annealing equipment.

[0003] The existing magnetron sputtering equipment works at room temperature, while the annealing equipment works at high temperature. The magnetron sputtering equipment and the annealing equipment are independent equipment. After the structure to be formed into a film is formed in the magnetron sputtering equipment, it needs to be taken out of the magnetron sputtering equipment and transferred to the annealing equipment for annealing. During the transfer process, the film-formed structure comes into contact with the air, and the dust in the air will contaminate the formed film, affecting the quality of the film. Utility Model Content

[0004] The embodiment of the present application provides a device for preparing a thin film layer. The device for preparing a thin film layer includes a plurality of chambers and a film-forming device, wherein the plurality of chambers include a transfer chamber, a film-forming chamber and an annealing chamber, wherein the film-forming chamber and the annealing chamber are respectively located at the side of the transfer chamber; the film-forming device is located in the film-forming chamber; a first isolation portion for controlling the connection state between the film-forming chamber and the transfer chamber is provided between the film-forming chamber and the transfer chamber, and a second isolation portion for controlling the connection state between the annealing chamber and the transfer chamber is provided between the annealing chamber and the transfer chamber; the device for preparing a thin film layer is provided with an air hole connected to the transfer chamber to replace the gas in the transfer chamber.

[0005] In one embodiment, the device for preparing a thin film layer also includes a first carrier located in the annealing chamber; the device for preparing a thin film layer is also provided with a gas inlet area located at the top of the annealing chamber and a plurality of gas outlets connected to the annealing chamber, the gas inlet area is provided with a plurality of gas inlets connected to the annealing chamber, the gas inlet area is opposite to the surface of the first carrier facing the gas inlet; the distance from each gas outlet to the top is greater than the distance from the surface to the top.

[0006] In one embodiment, the plurality of gas inlets are uniformly arranged in the gas inlet region; and / or the plurality of gas outlets are uniformly arranged in a direction surrounding the first carrier.

[0007] In one embodiment, the plurality of gas inlets are configured to introduce helium gas into the annealing chamber for purging and cooling after the annealing process is completed.

[0008] In one embodiment, the device for preparing a thin film layer further includes a first carrier located in the annealing chamber and an electromagnetic induction heating element disposed on the first carrier.

[0009] In one embodiment, the device for preparing a thin film layer further comprises a driving part and a picking-up part connected to the driving part, wherein the driving part drives the picking-up part to move between the chambers, and the material of the picking-up part is ceramic.

[0010] In one embodiment, both the first isolating part and the second isolating part are rotatable; the first isolating part realizes the switching of the connection state and the isolation state between the film forming chamber and the transfer chamber by rotation; the second isolating part realizes the switching of the connection state and the isolation state between the annealing chamber and the transfer chamber by rotation.

[0011] In one embodiment, the plurality of chambers further include a temporary storage chamber located at a side of the transfer chamber and a second carrier located in the temporary storage chamber.

[0012] In one embodiment, the temporary storage chamber is communicated with the transfer chamber.

[0013] In one embodiment, the second carrier is provided with a refrigerant channel for the refrigerant to flow.

[0014] In one embodiment, the device for preparing the thin film layer is also provided with a third isolation portion, and the third isolation portion is located on the side of the transfer chamber, and the third isolation portion has a first state and a second state. In the first state, the transfer chamber is connected to the external space, and in the second state, the transfer chamber is isolated from the external space.

[0015] In one embodiment, the film forming equipment is a magnetron sputtering equipment.

[0016] The device for preparing a thin film layer provided in an embodiment of the present application, by providing air holes connected to the transfer chamber, can replace the gas in the transfer chamber with clean gas through the air holes before transferring the film-formed structure from the film-forming chamber to the annealing chamber. The film-formed structure will not be contaminated when passing through the transfer chamber, which helps to improve the quality of the formed thin film layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a schematic diagram of the layout of an apparatus for preparing a thin film layer provided by an exemplary embodiment of the present application;

[0018] Figure 2 is a schematic diagram of the structure in an annealing chamber provided by an exemplary embodiment of the present application;

[0019] Figure 3 is a curve diagram showing the relationship between the conductivity and temperature of an indium zinc oxide thin film layer provided by an exemplary embodiment of the present application;

[0020] Figure 4 is a cross-sectional view of a second carrier provided by an exemplary embodiment of the present application;

[0021] Figure 5 It is a side view of a second carrier provided by an exemplary embodiment of the present application. Specific embodiments

[0022] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0023] The terms used in this application are for the purpose of describing specific embodiments only and are not intended to limit this application. The singular forms of "a", "said" and "the" used in this application and the appended claims are also intended to include plural forms unless the context clearly indicates other meanings. It should also be understood that the term "and / or" used herein refers to and includes any or all possible combinations of one or more associated listed items.

[0024] It should be understood that although the terms first, second, third, etc. may be used in the present application to describe various information, these information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of the present application, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, the word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining".

[0025] Some embodiments of the present application are described in detail below in conjunction with the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0026] The present application embodiment provides a device for preparing a thin film layer. Figure 1As shown, the device for preparing a thin film layer includes a plurality of chambers and a film-forming device 10, wherein the plurality of chambers include a transfer chamber 20, a film-forming chamber 30 and an annealing chamber 40, wherein the film-forming chamber 30 and the annealing chamber 40 are respectively located at the sides of the transfer chamber 20; the film-forming device 10 is located in the film-forming chamber 30; a first isolation portion 50 for controlling the connection state between the film-forming chamber 30 and the transfer chamber 20 is provided between the film-forming chamber 30 and the transfer chamber 20, and a second isolation portion 60 for controlling the connection state between the annealing chamber 40 and the transfer chamber 20 is provided between the annealing chamber 40 and the transfer chamber 20; the device is provided with an air hole connected to the transfer chamber 20 to replace the gas in the transfer chamber 20.

[0027] The device for preparing a thin film layer provided in an embodiment of the present application, by setting a first isolation part between a film-forming chamber located at a side of a transfer chamber and a transfer chamber, and controlling the first isolation part to connect the film-forming chamber with the transfer chamber, a structure to be film-formed can be placed in the film-forming chamber, or a structure that has already been film-formed can be transferred from the film-forming chamber to other chambers; during the film-forming process, the first isolation part is controlled to isolate the film-forming chamber from the transfer chamber, so as to facilitate regulation of the film-forming conditions in the film-forming chamber; by setting a second isolation part between the annealing chamber and the transfer chamber, and controlling the second isolation part to connect the annealing chamber with the transfer chamber, a structure that has already been film-formed can be placed in the annealing chamber, and a structure that has already been annealed can be transferred from the annealing chamber to other chambers, and the second isolation part is controlled to isolate the annealing chamber from the transfer chamber, so as to facilitate regulation of the annealing conditions in the annealing chamber; by setting an air hole connected to the transfer chamber, before transferring the structure that has already been film-formed from the film-forming chamber to the annealing chamber, the gas in the transfer chamber can be replaced with a clean gas through the air hole, so that the structure that has already been film-formed will not be contaminated when passing through the transfer chamber, which helps to improve the quality of the formed thin film layer.

[0028] The device for preparing a thin film layer provided in the embodiment of the present application can be used to form a thin film layer on a structure to be film-formed. For example, it can be used to form an ITO thin film layer on an LED wafer, and can also be used for other structures that need to form a thin film layer. In the embodiment of the present application, the structure to be film-formed refers to a structure that needs to form a thin film layer; the film-formed structure refers to the structure obtained after the structure to be film-formed is processed by a film-forming device to form a thin film layer; the annealed structure refers to the structure obtained after the film-formed structure is annealed.

[0029] In one embodiment, the device for preparing the thin film layer comprises a shell, in which the plurality of chambers are arranged, and the top wall, the bottom wall and the side wall of each chamber are all part of the shell.

[0030] In one embodiment, the air hole is connected to the air port of the air pump through a pipeline, and the air pump can inject gas into the transfer chamber through the pipeline and the air hole, and can also extract gas from the transfer chamber through the pipeline and the air hole. In some embodiments, the device is provided with a plurality of air holes connected to the transfer chamber, and each of the air holes is connected to the air port of the air pump through a pipeline.

[0031] In the embodiment of the present application, the pipelines connected to each pore are opened only when the gas in the transfer chamber needs to be replaced, and the pipelines are blocked at other times. When the first isolation part and the second isolation part are in the second state, the film forming chamber, the transfer chamber and the annealing chamber are all sealed chambers.

[0032] In one embodiment, when replacing the gas in the transfer chamber, the operations of extracting the gas in the transfer chamber and injecting clean gas into the transfer chamber may be repeated multiple times, thereby improving the cleanliness of the gas in the transfer chamber.

[0033] In one embodiment, the film forming device 10 is a magnetron sputtering device, and the target material of the magnetron sputtering device can be selected according to the material of the thin film layer to be formed.

[0034] In one embodiment, the device for preparing a thin film layer may include a plurality of film forming chambers 30, the number of film forming chambers 30 is greater than the number of annealing chambers 40, and each film forming chamber 30 is provided with a film forming device 10, and each film forming device 10 can work simultaneously. Since the time required for a film forming process is generally greater than the time required for an annealing process, setting the number of film forming chambers 30 to be greater than the number of annealing chambers 40 can make the number of structures processed by the film forming device 10 and the number of structures processed by the annealing device in unit time more matched, which helps to improve the efficiency of the device. Figure 1 In the illustrated embodiment, the apparatus for preparing a thin film layer includes two film forming chambers 30 and one annealing chamber 40 .

[0035] In one embodiment, both the first isolating part 50 and the second isolating part 60 can rotate; the first isolating part 50 can realize the switching between the connection state and the isolation state of the film forming chamber 30 and the transfer chamber 20 by rotating; the second isolating part 60 can realize the switching between the connection state and the isolation state of the annealing chamber 40 and the transfer chamber 20 by rotating. Specifically, both the first isolating part 50 and the second isolating part 60 have a first state and a second state, and both the first isolating part 50 and the second isolating part 60 can realize the switching between the first state and the second state by rotating. When the first isolating part 50 is in the first state, the film forming chamber 30 is connected to the transfer chamber 40, and when the first isolating part 50 is in the second state, the film forming chamber 30 is isolated from the transfer chamber 40; when the second isolating part 60 is in the first state, the annealing chamber 40 is connected to the transfer chamber 20, and when the second isolating part 60 is in the second state, the annealing chamber 40 is isolated from the transfer chamber 20. In some embodiments, the first isolating part 50 and the second isolating part 60 are rotatable baffle structures, similar to the door of a room.

[0036] In one embodiment, before the first isolation part 50 is switched from the second state to the first state, the pressure and gas composition in the transfer chamber 20 are adjusted through the air hole connected to the transfer chamber 20, so that the pressure of the transfer chamber 20 is the same as or close to the pressure of the film forming chamber 30, and the gas composition of the transfer chamber 20 is the same as the gas composition of the film forming chamber 30. In this way, the state switching of the first isolation part 50 is facilitated, and the situation that the state of the first isolation part 50 cannot be smoothly switched due to the large pressure difference between the transfer chamber 20 and the film forming chamber 30 is prevented; and after the transfer chamber 20 is connected with the film forming chamber 30, the gas composition of the transfer chamber 20 will not affect the gas composition of the film forming chamber 30.

[0037] In one embodiment, before the state of the second isolation part 60 is switched from the second state to the first state, the pressure and gas composition in the transfer chamber 20 are adjusted through the air hole connected to the transfer chamber 20, so that the pressure of the transfer chamber 20 is the same as or close to the pressure of the annealing chamber 40, and the gas composition of the transfer chamber 20 is the same as the gas composition of the annealing chamber 40. In this way, the state switching of the second isolation part 60 is facilitated, and the situation that the state of the second isolation part 60 cannot be smoothly switched due to the large pressure difference between the transfer chamber 20 and the annealing chamber 40 is prevented; and after the transfer chamber 20 is connected with the annealing chamber 40, the gas composition of the transfer chamber 20 will not affect the gas composition of the annealing chamber 40.

[0038] In one embodiment, the device for preparing a thin film layer further comprises a controller, and the first isolating portion 50 and the second isolating portion 60 are respectively connected to the controller for communication, and the controller can send control signals to the first isolating portion 50 and the second isolating portion 60 to control the switching of their states. The controller can be located outside the housing to facilitate operation by an operator.

[0039] In one embodiment, Figure 1 As shown, the device for preparing a thin film layer also includes a driving part 71 and a picking part 72 connected to the driving part 71. The driving part 71 can drive the picking part 72 to move between the chambers, and the driving part 71 can also drive the picking part 72 to pick up the structure to be transferred and transfer it under the drive of the driving part 71. The structure to be transferred can be a structure to be film-formed, a film-formed structure, an annealed structure, etc. For example, the picking part 72 transfers the structure to be film-formed into the film-forming chamber 30, transfers the film-formed structure from the film-forming chamber 30 to the annealing chamber 40, and moves the annealed structure out of the annealing chamber 40. In some embodiments, the moving part 71 can be a fork-shaped structure to facilitate picking up the structure to be transferred.

[0040] In one embodiment, the driving unit 71 is in communication with the controller, and the controller sends a control signal to the driving unit 71 to control the driving unit 71. The driving unit 71 drives the picking unit to pick up the structure to be transferred and move under the control of the controller. When the driving unit 71 does not need to work, the driving unit 71 and the picking unit 72 are located in the transfer chamber 20.

[0041] In one embodiment, the driving unit 71 includes a motor and a transmission arm connected to the motor, one end of the transmission arm is connected to the output shaft of the motor, and the other end is connected to the pickup unit 72. The transmission arm can be a retractable transmission arm, and its length can be adjusted as needed. In some embodiments, the motor can be fixed in the transmission chamber 20, or the motor can be fixedly arranged in the transmission chamber 20.

[0042] In one embodiment, the material of the pickup portion 72 is ceramic. In this way, the pickup portion 72 can withstand a relatively high temperature. After the film-formed structure is annealed to obtain an annealed structure, when the temperature of the annealed structure is relatively high, the pickup portion 72 can pick it up and transfer it. After the annealing process is completed, the annealing chamber 40 can be kept at a relatively high temperature, such as 200°C. In this way, the time required for the annealing chamber to heat up in the next annealing process is relatively short, which can reduce the power consumption of heating the annealing chamber and improve the efficiency of the annealing process.

[0043] In one embodiment, Figure 2As shown, the top of the annealing chamber 40 is provided with a gas inlet area 82, and the gas inlet area 82 is provided with a plurality of gas inlets 83, and the gas inlet area 82 is opposite to the surface of the first stage 81 facing the gas inlet 83; the side of the annealing chamber 40 is provided with a plurality of gas outlets 84, and the distance from each of the gas outlets 84 to the top is greater than the distance from the surface of the first stage 81 facing the gas inlet 83 to the top. The gas inlet area 82 is opposite to the surface of the first stage 81 facing the gas inlet 83, and the orthographic projection of the gas inlet area 82 on the plane where the surface of the first stage 81 facing the gas inlet 83 is located can be substantially coincident with the surface of the first stage. The surface of the first stage 81 facing the gas inlet 83 is used to carry the film-formed structure. With such arrangement, when the annealing treatment is performed, the gas entering the annealing chamber 40 through the gas inlet 83 can be basically sprayed vertically onto the film-formed structure on the surface of the first carrier 81; since the gas outlet 84 is located on the side of the first carrier and its height is lower than the surface of the first carrier, the gas sprayed vertically onto the film-formed structure can be diffused to the surroundings, so that different areas of the film-formed structure located on the surface of the first carrier 81 can be evenly exposed to the gas, which helps to improve the quality of the formed thin film layer.

[0044] Furthermore, the axis of the gas inlet 83 is perpendicular to the surface of the first carrier 81 facing the gas inlet 83. In this way, it is more helpful to spray the gas entering through the gas inlet 83 vertically on the film-formed structure.

[0045] Furthermore, the plurality of gas inlets 83 are evenly arranged in the gas inlet area 82. This can further improve the uniformity of the gas contacting different regions of the film-formed structure.

[0046] Furthermore, the plurality of gas outlets 84 are evenly arranged around the first carrier 81. In this way, the gas entering through the gas inlet can flow evenly around, further improving the uniformity of the gas contacting different regions of the film-formed structure.

[0047] In one embodiment, each of the gas inlets 83 and each of the gas outlets 84 are connected to a gas port of an air pump through a pipeline.

[0048] In one embodiment, the device for preparing the thin film layer further comprises an electromagnetic induction heating element disposed on the first carrier 81. The electromagnetic heating element is used to heat the first carrier 81, so that the temperature distribution of the first carrier 81 is relatively uniform, which is conducive to improving the quality of the formed thin film layer.

[0049] In one embodiment, the process of annealing the film-formed structure may be as follows: first, the second isolation part 60 is controlled to switch to the first state, and the pick-up part places the film-formed structure on the surface of the first carrier 81; then the pick-up part moves out of the annealing chamber 40; then the first carrier 81 is heated; then the pressure of the annealing chamber is adjusted to a preset pressure, which may be 0 to 1024 mbar. The preset pressure of the annealing chamber is 0, that is, the annealing chamber is in a vacuum state, and almost all the gas in the annealing chamber 40 is extracted; when the pressure in the annealing chamber 40 is greater than 0, N2 and O2 are introduced into the annealing chamber 40 to make the pressure of the annealing chamber reach the preset pressure. In some embodiments, the preset pressure may be a low pressure, for example, the preset pressure is less than or equal to 100 mbar. The duration of the annealing process may be 3 min to 20 min.

[0050] In some embodiments, when the gas is introduced into the annealing chamber 40, a flow meter may be used to adjust the flow of N2 and O2 introduced into the annealing chamber 40 to accurately control the content of O2 in the annealing chamber 40. Since the content of O2 is closely related to the conductivity of the thin film layer, accurately controlling the content of O2 in the annealing chamber 40 helps to improve the quality of the formed thin film layer.

[0051] In one embodiment, when the material of the thin film layer is indium zinc oxide, the temperature of the first carrier 81 may be raised to 450° C. to 600° C. during the annealing process. Figure 3 The graph is the relationship between the conductivity of the indium zinc oxide film layer and the annealing temperature. Figure 3 It can be seen that when the annealing temperature is between 450°C and 600°C, the conductivity of the indium zinc oxide thin film layer is the highest. Therefore, in the annealing process, the annealing temperature is controlled within the range of 450°C to 600°C to improve the conductivity of the indium zinc oxide thin film layer.

[0052] In one embodiment, the plurality of gas inlets 311 are configured to introduce helium into the annealing chamber 40 for purging and cooling after the annealing process is completed. After the annealing process is completed, helium can be used to purge and cool the annealing chamber 40 to reduce the temperature of the annealing chamber 40 to about 200° C. Helium has a high thermal conductivity, and purging the annealing chamber 40 with helium can increase the cooling rate of the annealing chamber 40 and has a high safety factor.

[0053] In one embodiment, Figure 1As shown, the multiple chambers of the device also include a temporary storage chamber 73 located at the side of the transfer chamber 20 and a second stage 90 located in the temporary storage chamber 73. When the film forming chamber 30 is in use, the structure to be film-formed that is transported into the device can be temporarily placed on the second stage 90; after the film-formed structure is taken out of the film forming chamber 30, if the annealing chamber 40 is in use, the film-formed structure can be temporarily placed on the second stage 90; after the annealed structure is taken out of the annealing chamber 40, it can be temporarily placed on the second stage 90 for cooling. If the temporary storage chamber 73 is set at the side of the transfer chamber 20, the second stage 90 will not affect the movement of the pickup part 72.

[0054] In one embodiment, Figure 1 As shown, the temporary storage chamber 73 is connected to the transfer chamber 20. Since there are no special requirements for the gas type and gas pressure in the temporary storage chamber 73, the temporary storage chamber 73 can be connected to the transfer chamber 20, which can simplify the internal structure of the device. Of course, a control unit for controlling the isolation and connection between the temporary storage chamber 73 and the transfer chamber 20 can also be set between the temporary storage chamber 73 and the transfer chamber 20.

[0055] In one embodiment, Figure 4 As shown, the second carrier 90 is provided with a refrigerant channel 91 for the refrigerant to flow. This arrangement can increase the cooling speed of the annealed structure placed on the second carrier 90. Figure 5 As shown, the second carrier 90 is further provided with a refrigerant inlet 93 and a refrigerant outlet 94, which are respectively connected to the refrigerant channel 91. The refrigerant flows into the refrigerant channel 91 through the refrigerant inlet 93 and flows out through the refrigerant outlet 94. In some embodiments, the refrigerant may be water.

[0056] In one embodiment, Figure 4 As shown, the second carrier 90 is provided with a plurality of accommodating cavities 92, and the accommodating cavities 92 are provided with openings, and the temporarily stored structure can be placed in the accommodating cavities 92 through the openings. The second carrier 90 can be provided with a plurality of accommodating cavities 92, and the plurality of accommodating cavities 92 are arranged at intervals in the height direction of the second carrier 90. A portion of a refrigerant channel is provided below each accommodating cavity 92. This is conducive to cooling the structure placed in each accommodating cavity 92. Figure 4 In the illustrated embodiment, the second carrier 90 is provided with three accommodating cavities 92. In other embodiments, the number of accommodating cavities 92 of the second carrier 90 may be one, two, four, or more than four.

[0057] In one embodiment, Figure 1As shown, the device for preparing a thin film layer is further provided with a third isolating portion 75, and the third isolating portion 75 is located at the side of the transfer chamber 20. The third isolating portion 75 has a first state and a second state. In the first state, the transfer chamber 20 is connected to the external space, and in the second state, the transfer chamber 20 is isolated from the external space. With such a configuration, when it is necessary to transfer the structure to be formed into a film into the transfer chamber 20, or when it is necessary to transfer the annealed structure to the outside of the device, the third isolating portion 75 is controlled to switch to the first state, and at other times, the third isolating portion 75 remains in the second state.

[0058] Furthermore, if Figure 1 As shown, the device for preparing a thin film layer further includes a transfer chamber 74, which can be communicated with an external space, and a third isolation portion 75 is located between the transfer chamber 74 and the transfer chamber 20. The operator can place the structure to be film-formed in the transfer chamber 74 to wait for processing, and the annealed structure can also be placed in the transfer chamber 74 to wait for the operator to take it away.

[0059] In one embodiment, Figure 1 As shown, the film forming chamber 30, the annealing chamber 40, the temporary storage chamber 73 and the transfer chamber 74 are arranged in the circumferential direction around the transfer chamber 20. This helps to shorten the path of the structure to be transferred during the transfer process and optimizes the space occupied by the device.

[0060] In one embodiment, using Figure 1 The complete process of forming a thin film layer by the device shown can be as follows: first, the operator places the structure to be film-formed in the transfer chamber 74; then, the third isolation part 75 is controlled to switch to the first state, the pickup part picks up the structure to be film-formed in the transfer chamber 74, and the third isolation part 75 is controlled to switch to the second state; then, the first isolation part is controlled to switch to the first state, the pickup part transfers the structure to be film-formed to the film-forming chamber for film-forming; after the film-forming process is completed, the first isolation part is controlled to switch to the second state, the pickup part picks up the film-formed structure, and the first isolation part is controlled to switch to the second state. The second state; then, the second isolation part is controlled to switch to the first state, the picking part transfers the film-formed structure to the annealing chamber and controls the second isolation part to switch to the second state, and the film-formed structure is annealed in the annealing chamber; after the annealing process is completed, the second isolation part is controlled to switch to the first state, the picking part transfers the annealed structure to the temporary storage chamber for cooling, and controls the second isolation part to switch to the second state; then, the third isolation part is controlled to switch to the first state, and the moving part transfers the annealed structure to the transfer chamber; then, the third isolation part is controlled to switch to the second state.

[0061] It should be noted that in the accompanying drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. It is also understood that when an element or layer is referred to as being "on" another element or layer, it may be directly on the other element, or there may be an intermediate layer. In addition, it is understood that when an element or layer is referred to as being "under" another element or layer, it may be directly under the other element, or there may be more than one intermediate layer or element. In addition, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it may be the only layer between the two layers or two elements, or there may also be more than one intermediate layer or element. Similar reference numerals throughout the text indicate similar elements.

[0062] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the disclosure disclosed herein. The present application is intended to cover any modification, use or adaptation of the present application, which follows the general principles of the present application and includes common knowledge or customary techniques in the art that are not disclosed in the present application. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present application are indicated by the following claims.

[0063] It should be understood that the present application is not limited to the precise structures that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A device for preparing a thin film layer, characterized in that: The device for preparing a thin film layer comprises a plurality of chambers and film-forming equipment, wherein the plurality of chambers comprises a transfer chamber, a film-forming chamber and an annealing chamber, and the film-forming equipment is located in the film-forming chamber; The film forming chamber and the annealing chamber are respectively located at the sides of the transfer chamber; A first isolating portion for controlling the connection state between the film forming chamber and the transfer chamber is provided between the film forming chamber and the transfer chamber, and a second isolating portion for controlling the connection state between the annealing chamber and the transfer chamber is provided between the annealing chamber and the transfer chamber; the device for preparing the thin film layer is provided with an air hole connected to the transfer chamber to replace the gas in the transfer chamber.

2. The device for preparing a thin film layer according to claim 1, characterized in that: The device for preparing a thin film layer also includes a first carrier located in the annealing chamber; the device for preparing a thin film layer is also provided with a gas inlet area located at the top of the annealing chamber and a plurality of gas outlets connected to the annealing chamber, the gas inlet area is provided with a plurality of gas inlets connected to the annealing chamber, the gas inlet area is opposite to the surface of the first carrier facing the gas inlet; the distance from each gas outlet to the top is greater than the distance from the surface to the top.

3. The device for preparing a thin film layer according to claim 2, characterized in that: The plurality of gas inlets are uniformly arranged in the gas inlet region; and / or the plurality of gas outlets are uniformly arranged in a direction surrounding the first carrier.

4. The device for preparing a thin film layer according to claim 2, characterized in that: The plurality of gas inlets are configured to introduce helium gas into the annealing chamber for purging and cooling after the annealing process is completed.

5. The device for preparing a thin film layer according to claim 1, characterized in that: The device for preparing a thin film layer also includes a first carrier located in the annealing chamber and an electromagnetic induction heating element arranged on the first carrier.

6. The device for preparing a thin film layer according to claim 1, characterized in that: The device for preparing a thin film layer further comprises a driving part and a picking-up part connected to the driving part, wherein the driving part drives the picking-up part to move between the chambers, and the material of the picking-up part is ceramic.

7. The device for preparing a thin film layer according to claim 1, characterized in that: The first isolating part and the second isolating part are both rotatable; the first isolating part realizes the switching of the connection state and the isolation state between the film forming chamber and the transfer chamber by rotation; the second isolating part realizes the switching of the connection state and the isolation state between the annealing chamber and the transfer chamber by rotation.

8. The device for preparing a thin film layer according to claim 1, characterized in that: The plurality of chambers further include a temporary storage chamber located at a side of the transfer chamber and a second carrier located in the temporary storage chamber.

9. The device for preparing a thin film layer according to claim 8, characterized in that: The temporary storage chamber is communicated with the transfer chamber.

10. The device for preparing a thin film layer according to claim 8, characterized in that: The second carrier is provided with a refrigerant channel for the refrigerant to flow.

11. The device for preparing a thin film layer according to claim 1, characterized in that: The device for preparing the thin film layer is also provided with a third isolation part, which is located at the side of the transfer chamber. The third isolation part has a first state and a second state. In the first state, the transfer chamber is connected to the external space, and in the second state, the transfer chamber is isolated from the external space.

12. The device for preparing a thin film layer according to claim 1, characterized in that: The film forming equipment is a magnetron sputtering equipment.

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