Gasket and process assembly
By designing a liner containing multiple ventilation zones and ventilation holes, the problem of uneven plasma distribution in semiconductor preparation process is solved, and the uniform distribution of gaseous reactants on the wafer surface and the consistency of etching or deposition are achieved, thereby improving the wafer yield.
Patent Information
- Application Number
- CN202421564668.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-03
- Publication Date
- 2025-04-25
- Estimated Expiration
- 2034-07-03
AI Technical Summary
In semiconductor preparation process, when the process chamber is connected to the pump body, the plasma distribution is uneven, resulting in uneven etching thickness on the wafer surface, affecting the wafer yield.
A gasket is designed including a first ventilation zone, a second ventilation zone and a third ventilation zone of the annular body, through the refined design of these ventilation zones and ventilation holes, the rate and uniformity of gas discharge from the process chamber is adjusted.
By optimizing the gas flow rate, we ensure that the gaseous reactants are distributed evenly on the wafer surface, which improves the consistency of etching or deposition in different areas of the wafer surface and improves the wafer yield.
Smart Images
Figure CN222798128U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a gasket and a process component. Background Art
[0002] In the process of semiconductor manufacturing, it is necessary to remove the nitride or oxide on the surface of the wafer through pre-treatment (Preclean). The SiCoNi process is a common dry pre-treatment process. Specifically, the SiCoNi process first plasma dissociates the etchant to generate plasma, which then chemically reacts with the nitride or oxide on the surface of the wafer to form a complex, which is then decomposed into a gaseous product at high temperature and then extracted from the process chamber.
[0003] However, during the process, the pump body connected to the process chamber is always in an open state, and the process chamber discharges part of the plasma while discharging the gaseous products. Since the gas flow rate near the area of the wafer close to the pump body is greater than the gas flow rate near the area of the wafer far from the pump body, the plasma is unevenly distributed on the wafer surface. The amount of plasma distributed on the wafer surface far from the pump body is greater than the amount of plasma distributed on the wafer surface close to the pump body, which results in uneven etched thickness on the wafer surface, affecting the wafer yield.
[0004] Similarly, when a film layer needs to be deposited on the wafer surface by vapor deposition, the uneven distribution of the reaction gas in different areas of the wafer surface will also make the thickness of the film layer deposited on the wafer surface inconsistent, affecting the wafer yield.
[0005] Therefore, a liner is needed that can improve the gas flow rate near different areas of the wafer during the process and improve the uniformity of gas distribution on the wafer surface. Utility Model Content
[0006] The purpose of the present application is to provide a gasket and process components to improve the gas flow rate near different areas of a wafer during the process and to improve the uniformity of gas distribution on the wafer surface.
[0007] In a first aspect, an embodiment of the present application provides a gasket for adjusting the rate and uniformity of gas removal from a process chamber, wherein the process chamber is provided with an exhaust port, and the exhaust port is connected to a pump body, and the gasket comprises: an annular body, the annular body comprising a first ventilation zone, a second ventilation zone and a third ventilation zone, the first ventilation zone being configured to be away from the exhaust port, and the first ventilation zone being provided with a first ventilation hole; the third ventilation zone being configured to face the exhaust port, and the third ventilation zone being provided with a third ventilation hole; and the second ventilation zone being located between the first ventilation zone and the third ventilation zone, and the second ventilation zone being provided with a second ventilation hole; the ratio of the lengths of the first ventilation zone, the second ventilation zone and the third ventilation zone along the circumference of the annular body is (0.8-1.2): (1.6-2.4): (0.8-1.2); wherein the total cross-sectional area of the first ventilation hole accounts for 35-45% of the total cross-sectional area of the first ventilation hole, the second ventilation hole and the third ventilation hole.
[0008] In some embodiments, the total cross-sectional area of the second ventilation hole accounts for 35-40% of the total cross-sectional area of the first ventilation hole, the second ventilation hole and the third ventilation hole.
[0009] In some embodiments, the total cross-sectional area of the third ventilation hole accounts for 20-30% of the total cross-sectional area of the first ventilation hole, the second ventilation hole and the third ventilation hole.
[0010] In some embodiments, the first ventilation holes, the second ventilation holes, and the third ventilation holes are of the same size, and the number of the first ventilation holes ≥ the number of the second ventilation holes > the number of the third ventilation holes.
[0011] In some embodiments, cross-sectional areas of the first vent hole, the second vent hole, and the third vent hole gradually decrease from a direction away from the exhaust port to a direction close to the exhaust port.
[0012] In some embodiments, there are multiple first ventilation holes; and cross-sections of the multiple first ventilation holes have different shapes.
[0013] In some embodiments, the top and bottom surfaces of the annular body are respectively provided with flanges integrally connected to the annular body, and the flanges are used to contact the inner wall of the process chamber to form a channel for gas flow between the annular body and the inner wall of the process chamber.
[0014] In some embodiments, the gasket further includes an exhaust ring, which is integrally connected to the annular body, and a side wall of the exhaust ring is provided with a sheet extraction port.
[0015] In some embodiments, the diameter of the exhaust ring is the same as the diameter of the annular body sidewall.
[0016] In a second aspect, an embodiment of the present application further provides a process component for etching a wafer or performing vapor deposition on a wafer surface, comprising: a process chamber, the process chamber being provided with an exhaust port; an air inlet head, connected to the process chamber, for introducing gaseous substances into the process chamber; a base, for placing a wafer; a gasket as described in the first aspect of the present application, the gasket being arranged in the process chamber, contacting the inner wall of the process chamber, and the annular body of the gasket being flush with the base; and a pump body, the pump body being connected to the process chamber, and extracting gas in the process chamber through the first air vent, the second air vent and the third air vent.
[0017] The beneficial effects of the liner and process components provided by the present application include but are not limited to the following:
[0018] The annular body of the gasket provided in the present application includes a first ventilation zone, a second ventilation zone and a third ventilation zone, the first ventilation zone is configured to be away from the exhaust port, and the first ventilation zone is provided with a first ventilation hole; the third ventilation zone is configured to face the exhaust port, and the third ventilation zone is provided with a third ventilation hole; the second ventilation zone is located between the first ventilation zone and the third ventilation zone, and the second ventilation zone is provided with a second ventilation hole; and the ratio of the lengths of the first ventilation zone, the second ventilation zone and the third ventilation zone along the circumference of the annular body is (0.8~1.2): (1.6~2.4): (0.8~1.2).
[0019] The total cross-sectional area of the first vent hole accounts for 35-45% of the total cross-sectional area of the first vent hole, the second vent hole and the third vent hole, so as to increase the gas flow rate near the wafer away from the exhaust port, avoid excessive concentration of gaseous reactants on the side of the wafer away from the exhaust port, and affect the uniformity of distribution of gaseous reactants on the wafer surface.
[0020] The total cross-sectional area of the third vent hole accounts for 20 to 30% of the total cross-sectional area of the first vent hole, the second vent hole and the third vent hole, so as to increase the gas flow rate near the wafer close to the exhaust port, avoid the concentration of gaseous reactants on the side of the wafer close to the exhaust port being too low, and affect the distribution uniformity of gaseous reactants on the wafer surface.
[0021] Since the cross-sectional areas of the first ventilation hole, the second ventilation hole and the third ventilation hole are finely designed, the gas on the wafer surface can be evenly distributed even if the first ventilation area, the second ventilation area and the third ventilation area are subjected to different suction forces from the pump body.
[0022] The process component provided in the present application uses the gaseous reactants provided in the present application to be evenly distributed on the surface of the wafer, thereby improving the consistency of etching or deposition on different areas of the wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] The following figures describe in detail the exemplary embodiments disclosed in this application. The same reference numerals represent similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting, exemplary embodiments, and the drawings are only for the purpose of illustration and description, and are not intended to limit the scope of this application. Other embodiments may also accomplish the inventive intent in this application. It should be understood that the drawings are not drawn to scale.
[0024] in:
[0025] Figure 1 It is a schematic diagram of the structure of a process component according to some embodiments of the present application;
[0026] Figure 2 is a schematic diagram of the structure of a gasket according to some embodiments of the present application;
[0027] Figure 3 for Figure 2 a front view of the pad;
[0028] Figure 4 and 5 It is a schematic diagram of the division of the first ventilation area, the second ventilation area and the third ventilation area according to some embodiments of the present application, and a schematic diagram of the cross-sectional shapes of the first ventilation hole, the second ventilation hole and the third ventilation hole. DETAILED DESCRIPTION
[0029] The following description provides specific application scenarios and requirements of the present application, with the purpose of enabling those skilled in the art to make and use the content in the present application. It will be apparent to those skilled in the art that various local modifications to the disclosed embodiments are apparent, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present application. Therefore, the present application is not limited to the embodiments shown, but to the widest scope consistent with the claims.
[0030] Taking the SiCoNi process as an example, during the etching process of the wafer, it is necessary to first generate plasma (Remote Plasma) in the plasma generator:
[0031] NF3+NH3→NH4F+NH4F.HF
[0032] The plasma then enters the process chamber through the gas inlet head and etches the oxide and nitride on the wafer surface at low temperature (<50°C):
[0033] Oxide etching:
[0034] NH4F+SiO2→(NH4)2SiF6+H2O
[0035] Nitride etching
[0036] NH4F.HF+Si3N4→(NH4)2SiF6+H2O
[0037] The side reaction products are then removed at high temperature (>100°C):
[0038] (NH4)2SiF6(solid)→SiF4(g)+NH3(g)+HF(g)
[0039] (NH4)2SiF6(solid)→SiF4(g)+NH3(g)+HF(g)
[0040] Since the pump body connected to the process chamber is always in an open state during the process, the process chamber discharges part of the plasma while discharging the exhaust gas. Since the gas flow rate near the area of the wafer close to the pump body is greater than the gas flow rate near the area of the wafer far from the pump body, the plasma is unevenly distributed on the wafer surface. The amount of plasma distributed on the wafer surface far from the pump body is greater than the amount of plasma distributed on the wafer surface close to the pump body, which results in uneven etched thickness on the wafer surface, affecting the wafer yield.
[0041] The present application provides a gasket for adjusting the rate and uniformity of gas removal from a process chamber, wherein the process chamber is provided with an exhaust port, the exhaust port is connected to a pump body, the gasket comprises an annular body, the annular body comprises a first ventilation zone, a second ventilation zone and a third ventilation zone, the first ventilation zone is configured to be away from the exhaust port, and the first ventilation zone is provided with a first ventilation hole; the third ventilation zone is configured to face the exhaust port, and the third ventilation zone is provided with a third ventilation hole; the second ventilation zone is located between the first ventilation zone and the third ventilation zone, and the second ventilation zone is provided with a second ventilation hole; and the ratio of the length of the first ventilation zone, the second ventilation zone and the third ventilation zone along the circumference of the annular body is (0.8-1.2): (1.6-2.4): (0.8-1.2); wherein the total cross-sectional area of the first ventilation hole accounts for 35-40% of the total cross-sectional area of the first ventilation hole, the second ventilation hole and the third ventilation hole.
[0042] Gases in the process chamber, such as gaseous reactants, gaseous byproducts, etc., can be discharged from the process chamber through the liner and the exhaust port. The liner provided in the present application increases the gas flow rate near the wafer away from the exhaust port by setting the total cross-sectional area of the first vent holes in the first ventilation zone away from the exhaust port to 35-40% of the total cross-sectional area of all vent holes, thereby avoiding excessive concentration of gaseous reactants on the side of the wafer away from the exhaust port, which affects the uniformity of distribution of gaseous reactants on the wafer surface.
[0043] The gasket provided in the present application will be described in detail below with reference to the embodiments and drawings.
[0044] refer to Figures 1 to 3 An embodiment of the present application provides a liner, which is used to adjust the rate and uniformity of removing gas from a process chamber 10. The liner can be used in a vapor deposition device or a dry etching device. By adjusting the rate and uniformity of removing gas from the process chamber 10, uniform deposition or etching of the substrate in the process chamber 10 can be achieved.
[0045] The process chamber 10 is provided with an exhaust port 11 , and the exhaust port 11 is connected to the pump body 20 . The gas in the process chamber 10 is discharged from the process chamber 10 to the pump body 20 through the liner and the exhaust port 11 .
[0046] The gasket includes an annular body 100. In some embodiments, the top and bottom surfaces of the annular body 100 are respectively provided with flanges 200 integrally connected to the annular body 100. The flange 200 is used to contact the inner wall of the process chamber 10. A channel for gas flow is formed between the annular body 100 and the inner wall of the process chamber 10. The gas in the process chamber 10 first enters the channel and then flows from the channel to the exhaust port 11.
[0047] In some embodiments, the flange 200 is integrally connected to the annular body 100 .
[0048] In some embodiments, reference Figure 1 and 3 ~4, the annular body 100 includes a first ventilation area 101, a second ventilation area 102 and a third ventilation area 103, the first ventilation area 101 is configured to be away from the exhaust port 11, and the first ventilation area 101 is provided with a first ventilation hole 101a; and the third ventilation area 103 is configured to face the exhaust port 11, and the third ventilation area 103 is provided with a third ventilation hole 103a; the second ventilation area 102 is located between the first ventilation area 101 and the third ventilation area 103, and the second ventilation area 102 is provided with a second ventilation hole 102a.
[0049] The ratio of the lengths of the first ventilation area 101, the second ventilation area 102 and the third ventilation area 103 along the circumferential direction of the annular body 100 is (0.8-1.2):(1.6-2.4):(0.8-1.2), for example, 1:2:1, 0.8:2.4:0.8 or 1.2:1.6:1.2.
[0050] The total cross-sectional area of the first vent 101a accounts for 35-40% of the total cross-sectional area of the first vent 101a, the second vent 102a and the third vent 103a. The number of the first vent 101a can be one or more. When the number of the first vent 101a is more than one, the total cross-sectional area of the first vent 101a refers to the sum of the cross-sectional areas of all the first vents 101a; and the total cross-sectional area of the first vent 101a, the second vent 102a and the third vent 103a refers to the sum of the cross-sectional areas of the first vent 101a, the second vent 102a and the third vent 103a. The surface perpendicular to the axial direction of the hole is defined as the cross section.
[0051] The first ventilation area 101 is far away from the exhaust port 11, and the suction force received by the first ventilation area 101 from the pump body 20 is smaller than the suction force received by the second ventilation area 102 and the third ventilation area 103 from the pump body 20. By setting the total cross-sectional area of the first ventilation hole 101a to 35-45% of the total cross-sectional area of the first ventilation hole 101a, the second ventilation hole 102a and the third ventilation hole 103a, the amount of gas near the first ventilation area 101 in the process chamber 10 flowing into the channel and discharged through the exhaust port 11 can be increased when the suction force is small, thereby reducing the concentration of the gas in the first ventilation area 101 and increasing the uniformity of the gas distribution on the wafer surface.
[0052] In some embodiments, the total cross-sectional area of the first ventilation hole 101a accounts for 35%, 36.3%, 38.4%, 40%, 42% or 45% of the total cross-sectional area of the first ventilation hole 101a, the second ventilation hole 102a and the third ventilation hole 103a.
[0053] In some embodiments, the total cross-sectional area of the third ventilation hole 103a accounts for 20-30% of the total cross-sectional area of the first ventilation hole 101a, the second ventilation hole 102a and the third ventilation hole 103a.
[0054] The third ventilation area 103 is close to the exhaust port 11, and the suction force received by it from the pump body 20 is greater than the suction force received by the first ventilation area 101 and the second ventilation area 102 from the pump body 20. By setting the total cross-sectional area of the third ventilation hole 103a to 20-30% of the total cross-sectional area of the first ventilation hole 101a, the second ventilation hole 102a and the third ventilation hole 103a, the amount of gas near the third ventilation area 103 in the process chamber 10 that flows into the channel and is discharged through the exhaust port 11 can be reduced when the suction force is large, thereby reducing the concentration of gas in the third ventilation area 103 and increasing the uniformity of gas distribution on the wafer surface.
[0055] In some embodiments, the total cross-sectional area of the third ventilation hole 103a accounts for 20%, 21.6%, 23.4%, 25%, 27.3%, or 30% of the total cross-sectional area of the first ventilation hole 101a, the second ventilation hole 102a, and the third ventilation hole 103a.
[0056] In some embodiments, the total cross-sectional area of the second vent 102a accounts for 35-40% of the total cross-sectional area of the first vent 101a, the second vent 102a and the third vent 103a to match the suction force from the pump body 20 on the second vent area 102 so that the gas is evenly distributed on the wafer surface.
[0057] In some embodiments, the first ventilation holes 101a, the second ventilation holes 102a, and the third ventilation holes 103a are of the same size, and the number of the first ventilation holes 101a ≥ the number of the second ventilation holes 102a > the number of the third ventilation holes 103a.
[0058] In some embodiments, reference Figure 3 , the cross-sectional area of a single first ventilation hole 101a>the cross-sectional area of a single second ventilation hole 102a>the cross-sectional area of a single third ventilation hole 103a.
[0059] In some embodiments, reference Figure 4 The cross-sectional areas of the first vent 101a, the second vent 102a and the third vent 103a gradually decrease from away from the exhaust port 11 to closer to the exhaust port 11, so as to more finely match the suction force from the pump body 20 received by different areas and increase the uniformity of gas distribution on the wafer surface.
[0060] In some embodiments, the cross-sections of the first ventilation hole 101a, the second ventilation hole 102a, and the third ventilation hole 103a may be circular, elliptical, polygonal, or irregular.
[0061] In some embodiments, reference Figure 5 , there are multiple first ventilation holes 101a, and the shapes of the cross sections of the multiple first ventilation holes 101a are different. The cross sections of the first ventilation holes 101a include rectangular and circular shapes. The height of the first ventilation holes 101a is adapted to the height of the annular body 100. In some embodiments, the height of the first ventilation holes 101a is 10 to 15 mm. Optionally, the height of the first ventilation holes 101a is 10 mm, 10.5 mm, 13 mm or 15 mm.
[0062] In some embodiments, the liner also includes an exhaust ring 300, which is used to exhaust the gas in the process chamber 10 below the annular body 100 and below the base 40 of the process chamber 10. The base 40 is used to place wafers. The uniformity of the gas distribution above the base 40 will affect the uniformity of etching or deposition on the wafer surface. Therefore, the annular body 100 is required to regulate the uniformity of the gas above the base 40, while the uniformity of the gas below the base 40 has no adverse effect on the processing of the wafer, and only conventional exhaust is required.
[0063] In some embodiments, the exhaust ring 300 is integrally connected to the annular body 100 .
[0064] In some embodiments, the diameter of the exhaust ring 300 is the same as the diameter of the side wall of the annular body 100 .
[0065] In some embodiments, a slit valve door 301 is disposed on the side wall of the exhaust ring 300. The slit valve door 301 is generally disposed toward the exhaust port 11, and the gas below the base 40 is exhausted from the exhaust port 11 via the slit valve door 301.
[0066] In some embodiments, the material of the liner includes aluminum to avoid reaction with the gas in the chamber.
[0067] When etching or deposition is performed on the surface of the wafer in the reaction chamber, the first ventilation area 101 is arranged away from the exhaust port 11, and the third ventilation area 103 is arranged close to the exhaust port 11. Since the cross-sectional areas of the first ventilation hole 101a, the second ventilation hole 102a and the third ventilation hole 103a are finely designed, even if the first ventilation area 101, the second ventilation area 102 and the third ventilation area 103 are subjected to different suction forces from the pump body 20, the gas on the wafer surface can still be evenly distributed.
[0068] The embodiment of the present application also provides a process component for etching a wafer or performing vapor deposition on the surface of a wafer, including: a process chamber 10, a pump body 20, an air inlet head 30, and a liner and a base 40 arranged in the process chamber 10.
[0069] In some embodiments, the process chamber 10 is provided with an exhaust port 11 , and the exhaust port 11 is connected to the pump body 20 for exhausting the gas in the process chamber 10 .
[0070] In some embodiments, the gas inlet head 30 is in communication with the process chamber 10 and is used to introduce gaseous substances, such as reaction gas or plasma, into the process chamber 10 .
[0071] In some embodiments, the base 40 is annular and aligned with the gas inlet head 30 for placing wafers.
[0072] In some embodiments, the liner is disposed in the process chamber 10, in contact with the inner wall of the process chamber 10, and the annular body 100 of the liner is flush with the base 40, and is used to achieve uniform deposition or etching of the substrate in the process chamber 10 by adjusting the rate and uniformity of removing gas from the process chamber 10. The liner is a liner provided by the technical solution of the present application, and has the features of the liner described in the above embodiment, which will not be repeated here.
[0073] In some embodiments, the pump body 20 is in communication with the process chamber 10 , and extracts gas in the process chamber 10 through the first vent hole 101 a , the second vent hole 102 a , and the third vent hole 103 a .
[0074] The beneficial effects of the liner and process components provided by the present application include but are not limited to the following:
[0075] The annular body of the gasket provided in the present application includes a first ventilation zone, a second ventilation zone and a third ventilation zone, the first ventilation zone is configured to be away from the exhaust port, and the first ventilation zone is provided with a first ventilation hole; the third ventilation zone is configured to face the exhaust port, and the third ventilation zone is provided with a third ventilation hole; the second ventilation zone is located between the first ventilation zone and the third ventilation zone, and the second ventilation zone is provided with a second ventilation hole; and the ratio of the lengths of the first ventilation zone, the second ventilation zone and the third ventilation zone along the circumference of the annular body is (0.8~1.2): (1.6~2.4): (0.8~1.2).
[0076] The total cross-sectional area of the first vent hole accounts for 35-45% of the total cross-sectional area of the first vent hole, the second vent hole and the third vent hole, so as to increase the gas flow rate near the wafer away from the exhaust port, avoid excessive concentration of gaseous reactants on the side of the wafer away from the exhaust port, and affect the uniformity of distribution of gaseous reactants on the wafer surface.
[0077] The total cross-sectional area of the third vent hole accounts for 20 to 30% of the total cross-sectional area of the first vent hole, the second vent hole and the third vent hole, so as to increase the gas flow rate near the wafer close to the exhaust port, avoid the concentration of gaseous reactants on the side of the wafer close to the exhaust port being too low, and affect the distribution uniformity of gaseous reactants on the wafer surface.
[0078] Since the cross-sectional areas of the first ventilation hole, the second ventilation hole and the third ventilation hole are finely designed, the gas on the wafer surface can be evenly distributed even if the first ventilation area, the second ventilation area and the third ventilation area are subjected to different suction forces from the pump body.
[0079] The process component provided in the present application uses the gaseous reactants provided in the present application to be evenly distributed on the surface of the wafer, thereby improving the consistency of etching or deposition on different areas of the wafer surface.
[0080] It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects that may be produced may be any one or a combination of the above, or any other beneficial effects that may be obtained.
[0081] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only for example and does not constitute a limitation of this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements and corrections to this application. Such modifications, improvements and corrections are suggested in this specification, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of this application.
[0082] It should be noted that in the description of this application, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", and "fix" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a rotating connection or a sliding connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood in combination with specific circumstances.
[0083] In addition, when terms such as "first", "second", and "third" are used in the specification of this application to describe various features, these terms are only used to distinguish these features and cannot be understood as indicating or implying the relationship between the features, the relative importance, or implicitly indicating the number of features indicated.
[0084] In addition, the present specification describes exemplary embodiments by reference to idealized exemplary cross-sectional views and / or plan views and / or stereograms. Therefore, differences from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are foreseeable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but should include deviations in shapes caused by, for example, manufacturing. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device nor to limit the scope of the exemplary embodiments.
[0085] At the same time, the present application uses specific words to describe the embodiments of this specification. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in the present application does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.
[0086] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.
[0087] Finally, it should be understood that the embodiments described in this application are only used to illustrate the principles of the embodiments of the present application. Other variations may also fall within the scope of the present application. Therefore, as an example and not a limitation, the alternative configurations of the embodiments of the present application may be considered to be consistent with the teachings of the present application. Accordingly, the embodiments of the present application are not limited to the embodiments explicitly introduced and described in the present application.
Claims
1. A liner for regulating the rate and uniformity of gas removal from a process chamber, characterized in that The process chamber is provided with an exhaust port, the exhaust port is connected to the pump body, and the liner comprises: An annular body, the annular body comprising a first ventilation area, a second ventilation area and a third ventilation area, the first ventilation area is configured to be away from the exhaust port, and the first ventilation area is provided with a first ventilation hole; the third ventilation area is configured to face the exhaust port, and the third ventilation area is provided with a third ventilation hole; the second ventilation area is located between the first ventilation area and the third ventilation area, and the second ventilation area is provided with a second ventilation hole; and the ratio of the lengths of the first ventilation area, the second ventilation area and the third ventilation area along the circumference of the annular body is (0.8-1.2): (1.6-2.4): (0.8-1.2); The total cross-sectional area of the first ventilation hole accounts for 35-45% of the total cross-sectional area of the first ventilation hole, the second ventilation hole and the third ventilation hole.
2. The pad according to claim 1, characterized in that The total cross-sectional area of the second ventilation hole accounts for 35-40% of the total cross-sectional area of the first ventilation hole, the second ventilation hole and the third ventilation hole.
3. The pad according to claim 1, characterized in that The total cross-sectional area of the third ventilation hole accounts for 20-30% of the total cross-sectional area of the first ventilation hole, the second ventilation hole and the third ventilation hole.
4. The pad according to claim 1, characterized in that The first ventilation holes, the second ventilation holes, and the third ventilation holes are of the same size, and the number of the first ventilation holes ≥ the number of the second ventilation holes > the number of the third ventilation holes.
5. The pad according to claim 1, characterized in that The cross-sectional areas of the first vent hole, the second vent hole, and the third vent hole gradually decrease from a direction away from the exhaust port to a direction close to the exhaust port.
6. The pad according to claim 1, characterized in that The number of the first ventilation holes is plural; and the cross sections of the plurality of first ventilation holes have different shapes.
7. The pad according to claim 1, characterized in that The top and bottom surfaces of the annular body are respectively provided with flanges integrally connected to the annular body, and the flanges are used to contact the inner wall of the process chamber to form a channel for gas flow between the annular body and the inner wall of the process chamber.
8. The pad according to claim 1, characterized in that It also includes an exhaust ring, which is integrally connected to the annular body, and a sheet extraction port is provided on the side wall of the exhaust ring.
9. The pad according to claim 8, characterized in that The diameter of the exhaust ring is the same as the diameter of the side wall of the annular body.
10. A process component for etching a wafer or performing vapor deposition on a wafer surface, characterized in that: include: A process chamber, wherein the process chamber is provided with an exhaust port; an air inlet head, connected to the process chamber and used for introducing gaseous substances into the process chamber; A base for placing wafers; The liner according to any one of claims 1 to 9, wherein the liner is disposed in the process chamber, in contact with an inner wall of the process chamber, and the annular body of the liner is flush with the base; as well as A pump body is communicated with the process chamber and extracts gas in the process chamber through the first vent hole, the second vent hole and the third vent hole.