Wafer heat treatment furnace body heating device

Abstract

The utility model relates to a wafer heat treatment furnace body heating device, which comprises a furnace body, a furnace door, a support, a wafer carrying disc, a pushing device, a heating system, a vacuumizing interface, an air draft interface and a water cooling system, the wafer carrying disc is arranged on the support, the support is arranged on the furnace door, a vacuum cavity is arranged in the furnace body, and the pushing device is arranged in the vacuum cavity. The furnace door is matched with a pushing device to be installed on the furnace body in a pushing mode, the wafer carrying disc is pushed into or pushed out of the vacuum cavity along with the push-pull motion of the furnace door, heating systems are arranged in the furnace body and distributed on the upper layer and the lower layer of the wafer carrying disc, and a vacuumizing connector is arranged at the top of the furnace body. The vacuumizing connector is communicated with the vacuum cavity, the air draft connectors are communicated with the heating systems on the upper layer and the lower layer respectively, and meanwhile a water cooling system is arranged on the side wall of the furnace body.

Description

Technical Field

[0001] The utility model relates to the technical field of wafer heat treatment, in particular to a wafer heat treatment furnace heating device. Background Art

[0002] Conventional annealing furnaces in the prior art have a slow heating speed and uneven heating of the product during the heat treatment process. The uneven heating may cause the product to crack or be damaged during the heat treatment process. Utility Model Content

[0003] In order to solve the above problems, the utility model provides a wafer heat treatment furnace heating device to solve the problems of the prior art such as slow heating speed and uniform heat treatment temperature. A wafer heat treatment furnace heating device is used for semiconductor device manufacturing and material research. Its working principle is to process materials by rapid heating and cooling to change their properties or structures. This device is commonly used in applications such as ion implantation annealing, rapid annealing after ITO coating, oxide and nitride growth, etc.

[0004] To achieve the above-mentioned purpose, the utility model adopts the following technical scheme: the utility model relates to a wafer heat treatment furnace heating device, including a furnace body, a furnace door, a bracket, a wafer carrier, a pushing device, a heating system, a vacuum interface, an exhaust interface and a water cooling system. The wafer carrier is installed on the bracket, and the bracket is arranged on the furnace door. A vacuum chamber is provided in the furnace body. The furnace door can be pushed and installed on the furnace body with the pushing device. The wafer carrier is pushed or pushed out of the vacuum chamber as the furnace door pushes and pulls. A heating system is provided in the furnace body. The heating system is distributed in the upper and lower layers of the wafer carrier. A vacuum interface is provided on the top of the furnace body. The vacuum interface is connected to the vacuum chamber. Several exhaust interfaces are respectively connected to the upper and lower heating systems. At the same time, a water cooling system is provided on the side walls of the furnace body.

[0005] Preferably, the water cooling system includes a water circuit, a water cooler and a water cooling interface. The water circuit is arranged in the side wall of the furnace body, the water circuit inlet and outlet are respectively connected to the water cooling interface, and the water circuit is connected to an external water cooler through the water cooling interface to form a water cooling circuit.

[0006] Preferably, one end of the vacuum extraction interface is connected to the vacuum chamber, and the other end of the vacuum extraction interface is connected to the vacuum pump.

[0007] Preferably, the wafer carrier is silicon carbide.

[0008] Preferably, the furnace door is provided with a locking cylinder, and during operation, the locking cylinder closes and locks the furnace door.

[0009] Preferably, the pushing device comprises a guide shaft and an ejection cylinder, and the guide shaft and the ejection cylinder are respectively connected to the back of the furnace door.

[0010] Preferably, the heating system comprises a plurality of infrared lamp tubes, which are divided into two layers, upper and lower layers, arranged inside the furnace body, and each infrared lamp tube is evenly arranged.

[0011] Preferably, a plurality of the exhaust interfaces are respectively connected to the upper and lower layers of infrared lamp tubes, and the other end of the exhaust interface is connected to the exhaust device.

[0012] Preferably, a pyrometer is installed at the bottom of the furnace body, and the pyrometer detects the temperature inside the furnace body.

[0013] The beneficial effects of the utility model are as follows: the utility model mainly relates to a wafer heat treatment furnace heating device, which improves the temperature uniformity and heating speed during the product heat treatment process, and evenly heat treats the wafer by arranging two layers of infrared lamps. At the same time, the wafer carrier is made of silicon carbide, so that the temperature of the wafer is more uniform during the heat treatment process. The utility model also cools the furnace body by setting a water channel on the side wall of the furnace body and connecting it to an external water cooler to form a water cooling circuit, so that the furnace body is kept at a normal temperature. The utility model mainly processes materials by rapidly heating and cooling, which can improve the accuracy of temperature control to change its properties or structure, thereby achieving better wafer heat treatment effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of the overall structure of a wafer heat treatment furnace heating device of the utility model.

[0015] Figure 2 It is a side view of a wafer heat treatment furnace heating device of the utility model.

[0016] Figure 3 It is a top view of the wafer heat treatment furnace heating device of the utility model.

[0017] Figure 4 The utility model is a schematic diagram of the structure of the infrared lamp tube inside the heating device of the wafer heat treatment furnace.

[0018] Figure 5 yes

[0019] Reference numerals

[0020] 1. Furnace body; 11. Vacuum chamber; 2. Furnace door; 21. Locking cylinder; 3. Bracket; 31. Wafer carrier; 4. Guide shaft; 5. Ejection cylinder; 6. Infrared lamp tube; 7. Vacuum extraction interface; 8. Exhaust interface; 9. Water cooling interface; 10. Pyrometer. DETAILED DESCRIPTION

[0021] See also Figure 1-5 As shown, the utility model relates to a wafer heat treatment furnace heating device, which comprises a furnace body 1, a furnace door 2, a bracket 3, a wafer carrier 31, a pushing device, a heating system, a vacuum interface 7, an exhaust interface 8 and a water cooling system. The wafer carrier 31 is mounted on the bracket 3, and the bracket 3 is arranged on the furnace door 2. A vacuum chamber 11 is arranged in the furnace body 1, and the furnace door 2 can be pushed and installed on the furnace body 1 with the pushing device. The wafer carrier 31 is pushed or pushed out of the vacuum chamber 11 as the furnace door 2 moves. A heating system is arranged in the furnace body 1, and the heating system is distributed at the upper and lower ends of the wafer carrier 31. A vacuum interface 7 is arranged on the top of the furnace body 1, and the vacuum interface 7 is connected to the vacuum chamber 11. The heating system is connected to an external exhaust device (not shown in the figure) through a plurality of exhaust interfaces 8. At the same time, a water cooling system is arranged on the side wall of the furnace body 1.

[0022] Furthermore, in this embodiment, the furnace body 1 serves as the main body of the heat treatment device. The material of the furnace body 1 is aluminum alloy. The furnace body 1 is provided with a water cooling system. The water cooling system includes a water circuit (not shown in the figure), a water cooler (not shown in the figure) and a water cooling interface 9. The water circuit is arranged in the side wall of the furnace body 1, and the water cooling interface 9 is arranged on the side plate of the furnace body 1. The inlet and outlet of the water circuit are respectively connected to the water cooling interface 9. The water circuit is connected to the water cooler through the water cooling interface 9 to form a water cooling circuit. The function of the water cooling system is to take away the heat of the furnace body 1 to ensure that the furnace body 1 remains at a normal temperature when the internal heating system of the furnace body 1 heats the product.

[0023] Furthermore, in this embodiment, one end of the vacuum interface 7 is connected to the vacuum chamber 11, and the other end of the vacuum interface 7 is connected to a vacuum pump (not shown in the figure). Because the product temperature is too high during the heat treatment process of the furnace body 1, if air enters, it may cause metal oxidation, so vacuum is first drawn and then nitrogen is introduced, and nitrogen is used as a protective gas.

[0024] Furthermore, the bracket 3 is arranged on the back of the furnace door 2. In this embodiment, the bracket 3 is made of quartz material, so that the bracket 3 has good light transmittance, high temperature resistance and is not easy to absorb heat. The bracket 3 is mainly used to provide a bearing function for the wafer carrier 31. In this embodiment, the main material of the wafer carrier 31 is silicon carbide, so that the wafer carrier 31 has good thermal conductivity and high temperature resistance. During the wafer heat treatment process, the uniformity of the temperature received by the wafer can be improved. In this embodiment, a temperature measuring thermocouple 32 is provided under the wafer carrier 31, and the temperature measuring thermocouple 32 mainly detects the real-time temperature during the wafer heat treatment process. In addition, a locking cylinder 21 is configured on the furnace door 2, and the locking cylinder 21 mainly locks the furnace door 2 during the heat treatment to prevent the furnace door 2 from opening, thereby ensuring the heat treatment processing environment of the wafer.

[0025] Furthermore, the pushing device includes a guide shaft 4 and an ejection cylinder 5, and the guide shaft 4 and the ejection cylinder 5 are respectively connected to the back of the furnace door 2. The guide shaft 4 provides power and a guide track for the opening and closing of the furnace door 2, ensuring that the furnace door 2 moves according to the guide track. The ejection cylinder 5 can provide a thrust or a pull to the furnace door 2, so that the furnace door 2 is pushed out of the furnace body 1. When the furnace door 2 is pushed out, the ejection cylinder 5 can be reset by pulling force to close the furnace door 2.

[0026] Furthermore, in this embodiment, the heating system includes a plurality of infrared lamp tubes 6, and the infrared lamp tubes 6 use halogen tungsten lamps. The infrared lamp tubes 6 are divided into upper and lower layers and are arranged inside the furnace body 1, and each infrared lamp tube 6 is evenly arranged. When the furnace door 2 is closed, the wafer carrier 31 is located between the upper and lower layers of infrared lamp tubes 6, and the product is heated by the infrared lamp tubes 6. In addition, a plurality of the exhaust ports 8 are respectively connected to the upper and lower layers of infrared lamp tubes 6, and the other end of the exhaust port 8 is connected to the exhaust device. Because the temperature of the infrared lamp tube 6 is relatively high during the heating operation, in order to prevent the temperature of the circuit that supplies power to the infrared lamp tube 6 from being relatively high, the exhaust device maintains convection through the exhaust ports 8 on both sides through exhaust, so that wind energy flows to each infrared lamp tube 6 and takes away heat, thereby cooling the infrared lamp tube 6.

[0027] Furthermore, in order to detect the real-time temperature of the product inside the furnace body 1, a pyrometer 10 is installed at the bottom of the furnace body 1. The pyrometer 10 detects the temperature inside the furnace body 1, allowing the operator to make a balance adjustment according to the real-time temperature inside to ensure the quality of the product.

[0028] The following is the process flow of the utility model: first, the furnace door 2 is pushed out by the ejection cylinder 5 in the pushing device, the wafer is placed on the wafer carrier 31, and the furnace door 2 is reset and closed by the ejection cylinder 5. Then, the infrared lamp 6 is powered on, and the brightness of the infrared lamp 6 is increased or decreased by controlling the power supply of the infrared lamp 6, thereby controlling the temperature of the infrared lamp 6, and then applying the required heat treatment temperature to the product. At the same time, the furnace body 1 is cooled by controlling the external water cooler and the water circuit to form a water cooling circuit.

[0029] The utility model mainly relates to a wafer heat treatment furnace heating device. The utility model improves the temperature uniformity and heating speed during the heat treatment process of the product. The upper and lower layers of infrared lamps 6 are arranged to uniformly heat treat the wafer. At the same time, the wafer carrier 31 is made of silicon carbide material, so that the temperature of the wafer during the heat treatment process is more uniform. In the utility model, a water channel is arranged on the side wall of the furnace body 1 to connect with an external water cooler to form a water cooling circuit, and the furnace body 1 is cooled to keep the furnace body 1 at a normal temperature. The utility model mainly processes materials by rapidly heating and cooling, which can improve the accuracy of temperature control to change its properties or structure, thereby achieving better wafer heat treatment effects.

[0030] The above implementation modes are merely descriptions of the preferred implementation modes of the present invention, and are not intended to limit the scope of the present invention. Without departing from the design spirit of the present invention, various modifications and improvements made to the technical solutions of the present invention by ordinary engineering and technical personnel in the field shall fall within the protection scope determined by the claims of the present invention.

Claims

1. A wafer heat treatment furnace heating device, characterized in that: It includes a furnace body, a furnace door, a bracket, a wafer carrier, a pushing device, a heating system, a vacuum interface, an exhaust interface and a water cooling system. The wafer carrier is installed on the bracket, and the bracket is arranged on the furnace door. A vacuum chamber is provided in the furnace body. The furnace door can be pushed and installed on the furnace body with the pushing device. The wafer carrier is pushed or pushed out of the vacuum chamber as the furnace door pushes and pulls. A heating system is provided in the furnace body, and the heating system is distributed on the upper and lower layers of the wafer carrier. A vacuum interface is provided on the top of the furnace body, and the vacuum interface is connected to the vacuum chamber. Several exhaust interfaces are respectively connected to the heating systems of the upper and lower layers. At the same time, a water cooling system is provided on the side walls of the furnace body.

2. The wafer heat treatment furnace heating device according to claim 1, characterized in that: The water cooling system includes a water circuit, a water cooler and a water cooling interface. The water circuit is arranged in the side wall of the furnace body. The water circuit inlet and outlet are respectively connected to the water cooling interface. The water circuit is connected to an external water cooler through the water cooling interface to form a water cooling loop.

3. The wafer heat treatment furnace heating device according to claim 1, characterized in that: One end of the vacuum pumping interface is connected to the vacuum chamber, and the other end of the vacuum pumping interface is connected to the vacuum pump.

4. The wafer heat treatment furnace heating device according to claim 1, characterized in that: The wafer carrier is made of silicon carbide.

5. The wafer heat treatment furnace heating device according to claim 1, characterized in that: The furnace door is provided with a locking cylinder, and during operation, the locking cylinder closes and locks the furnace door.

6. The wafer heat treatment furnace heating device according to claim 1, characterized in that: The pushing device comprises a guide shaft and an ejection cylinder, and the guide shaft and the ejection cylinder are respectively connected to the back of the furnace door.

7. The wafer heat treatment furnace heating device according to claim 1, characterized in that: The heating system comprises a plurality of infrared lamp tubes, which are divided into two layers, upper and lower layers, arranged inside the furnace body, and each infrared lamp tube is evenly arranged.

8. The wafer heat treatment furnace heating device according to claim 7, characterized in that: A plurality of the exhaust ports are respectively connected to the upper and lower layers of infrared lamp tubes, and the other end of the exhaust port is connected to the exhaust device.

9. The wafer heat treatment furnace heating device according to claim 1, characterized in that: A pyrometer is installed at the bottom of the furnace body, and the pyrometer detects the temperature inside the furnace body.

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