Light intensity measuring device and UV curing equipment

Abstract

The utility model discloses a light intensity measuring device and UV curing equipment. The light intensity measuring device is applied to a curing cavity of UV curing equipment for curing a silicon wafer. The light intensity measuring device comprises a probe assembly, and the probe assembly is installed in the curing cavity and located in the UV illumination range of the UV curing equipment. The probe assembly is provided with at least one light intensity test point position, and the position of the light intensity test point position corresponds to the process measurement point position of the silicon wafer. According to the utility model, the light intensity test point positions on the probe assembly are designed according to the process measurement point positions of the silicon wafer, and the light intensity change of the whole process is measured through the probe assembly, so that the illumination condition of the silicon wafer in the whole UV photocuring process can be accurately confirmed, and the influence of the light intensity on the process effect of the silicon wafer can be analyzed.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor process detection, in particular to a light intensity measuring device and UV curing equipment. Background Art

[0002] With the continuous advancement of semiconductor process technology, when semiconductor devices such as silicon chips are reduced to the deep submicron range, low dielectric materials are needed to reduce the RC delay time caused by parasitic capacitance. Currently, the formation process of low dielectric materials is usually achieved through UV light curing process.

[0003] In the UV light curing process, due to the common phenomenon that the light intensity distribution of existing UV curing equipment is difficult to be completely consistent, the silicon wafer may not meet the requirements after being processed by the UV curing equipment. For example, abnormal points may appear in the quality inspection link of the silicon wafer, and the cause of the abnormal point needs to be found.

[0004] However, when the UV curing equipment is performing process processing, it is impossible to measure the light intensity of the UV curing equipment in real time from the front. Only the reflected light intensity can be measured from the side, but this light intensity does not directly act on the silicon wafer; therefore, it is necessary to find a way to directly measure the light intensity during the process. Utility Model Content

[0005] The utility model aims to provide a light intensity measuring device and UV curing equipment, aiming to solve the problem that the prior art cannot accurately confirm the light conditions of silicon wafers in the entire UV light curing process, resulting in the inability to correspondingly analyze the influence of light intensity on the process effect.

[0006] In the first aspect, an embodiment of the utility model provides a light intensity measuring device, which is used in a curing chamber of a UV curing device for curing silicon wafers; the light intensity measuring device includes a probe assembly, which is installed in the curing chamber and is within the UV light range of the UV curing device; at least one light intensity testing point is provided on the probe assembly, and the position of the light intensity testing point corresponds to the process measurement point of the silicon wafer.

[0007] In a second aspect, an embodiment of the utility model provides a UV curing device, including: an optical table, a light source assembly, a driving member and a controller;

[0008] The optical table is provided with a curing cavity inside, and a light-transmitting window corresponding to the curing cavity is provided on the top surface;

[0009] The light source assembly is installed on the optical bench and is located above the light-transmitting window;

[0010] The driving member is installed on the optical bench and is located on one side of the light source assembly. The driving member is connected to the light source assembly and is used to drive the light source assembly to rotate with the vertical direction as the central axis;

[0011] The controller is connected to the light source assembly and the driving member;

[0012] The curing chamber is used to place the silicon wafer to be cured or the light intensity measuring device as described above.

[0013] The beneficial effects of the embodiments of the utility model are as follows: the light intensity test points on the probe assembly are designed according to the process measurement points of the silicon wafer, and the light intensity changes of the entire process are measured by the probe assembly, so that the lighting conditions of the silicon wafer during the entire UV light curing process can be accurately confirmed, which is helpful to analyze the influence of light intensity on the process effect of the silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0015] Figure 1 A schematic diagram of the structure of a UV curing device provided in an embodiment of the utility model;

[0016] Figure 2 A schematic diagram of process measurement points of a silicon wafer provided by an embodiment of the utility model;

[0017] Figure 3 A schematic diagram of light intensity test points of a probe assembly according to Embodiment 1 of the present utility model;

[0018] Figure 4 A schematic diagram of the structure of the probe assembly of the first embodiment provided by the present utility model;

[0019] Figure 5 A schematic diagram of the structure of a probe assembly according to Embodiment 2 of the present utility model;

[0020] Figure 6 A schematic diagram of the flow of a light intensity measurement method implemented by a probe assembly provided in Embodiment 1 of the present utility model;

[0021] Figure 7 A schematic flow chart of a light intensity measurement method implemented by a probe assembly provided in Embodiment 2 of the present utility model;

[0022] Figure 8This is a flow chart of a light intensity measurement method implemented by a probe assembly provided in Embodiment 3 of the present utility model.

[0023] Description of the symbols in the figure:

[0024] 10. UV curing equipment; 11. Optical table; 12. Light source assembly; 13. Driving part; 14. Controller; 15. Curing chamber;

[0025] 20. Silicon wafer; 21. Process measurement points;

[0026] 30. probe assembly; 31. probe hole;

[0027] 40. Altitude operating regulator. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0029] It should be understood that when used in this specification and the appended claims, the terms "include" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.

[0030] It should also be understood that the terms used in this utility model specification are only for the purpose of describing specific embodiments and are not intended to limit the utility model. As used in this utility model specification and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0031] It should be further understood that the term “and / or” used in the present specification and the appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0032] To facilitate understanding of this application, UV curing equipment is first introduced.

[0033] like Figure 1As shown, the embodiment of the utility model provides a UV curing device 10, including: an optical table 11, a light source assembly 12, a driving member 13 and a controller 14; a curing chamber 15 is provided inside the optical table 11, and a light-transmitting window corresponding to the curing chamber 15 is provided on the top surface; the light source assembly 12 is installed on the optical table 11 and is located above the light-transmitting window; the driving member 13 is installed on the optical table 11 and is located on one side of the light source assembly 12, the driving member 13 is connected to the light source assembly 12 and is used to drive the light source assembly 12 to rotate with the vertical direction as the central axis; the controller 14 is connected to the light source assembly 12 and the driving member 13; wherein, the curing chamber 15 is used to place a silicon wafer 20 to be cured (refer to Figure 2 ) or the following light intensity measuring device.

[0034] In this embodiment, after the silicon wafer 20 to be cured is placed in the curing chamber 15, the controller 14 controls the light source assembly 12 to irradiate ultraviolet light toward the curing chamber 15 at a preset power, and at the same time controls the driving member 13 (which can be a motor structure with belt or chain drive) to drive the light source assembly 12 to rotate in a circle, so that the ultraviolet light is evenly irradiated to complete the UV curing process of the silicon wafer 20. In the subsequent quality inspection link of the silicon wafer 20 after curing, the process measurement points 21 on the silicon wafer 20 (generally distributed radially outward in circles with the circle as the center) will be inspected for quality. If there are abnormal points, the cause of the abnormality needs to be found, and the light intensity in the UV curing process may be one of the links causing the abnormality.

[0035] For the analysis of light intensity in the UV curing process, in order to ensure the accuracy of the analysis, it is necessary to restore the light intensity directly acting on the silicon wafer 20. Therefore, this embodiment designs a light intensity measuring device, and places the light intensity measuring device in the curing chamber 15, so that the intensity measuring device is located at the position where the silicon wafer 20 is located when curing. The light intensity measuring device measures the light intensity received by the silicon wafer 20 during curing, and the measured light intensity is analyzed to confirm whether the abnormal process effect is caused by abnormal light intensity.

[0036] The light intensity measuring device of the present application is introduced below.

[0037] like Figure 1 , Figure 2 and Figure 3 An embodiment of the utility model provides a light intensity measuring device, which is applied to a curing chamber 15 of a UV curing device 10 for curing a silicon wafer 20; the light intensity measuring device includes a probe assembly 30, which is installed in the curing chamber 15 and is within the UV light irradiation range of the UV curing device 10; at least one light intensity test point is provided on the probe assembly 30, and the position of the light intensity test point corresponds to the process measurement point 21 of the silicon wafer 20.

[0038] In this embodiment, the position of the light intensity test point on the probe assembly 30 is designed accordingly based on the process measurement point 21 on the silicon wafer 20, so that after the probe assembly 30 is placed in the curing chamber 15, the light intensity of the light source assembly 12 directly acts on the probe assembly 30. The probe assembly 30 can directly measure the light intensity during the curing process, thereby accurately confirming the lighting conditions of the silicon wafer 20 during the entire UV light curing process, which is helpful to analyze the influence of light intensity on the process effect of the silicon wafer 20.

[0039] Various specific embodiments of the probe assembly 30 of the present application are described in detail below.

[0040] Embodiment 1:

[0041] See also Figure 4 The probe assembly 30 includes a first carrier and a plurality of optical probes; the first carrier is provided with a plurality of probe holes 31 which are distributed radially outward in a circle with the dot as the center, and the positions of the plurality of probe holes 31 correspond one-to-one to the process measurement points 21; the plurality of optical probes are installed one-to-one in the plurality of probe holes 31 to form a plurality of light intensity test points.

[0042] In this embodiment, usually, the number of process measurement points 21 of the silicon wafer 20 is relatively large. To ensure that each process measurement point 21 can be analyzed accordingly, the probe assembly 30 needs to be equipped with a plurality of optical probes having the same number and corresponding positions as the process measurement points 21, thereby achieving comprehensive light intensity measurement and analysis.

[0043] Therefore, the shape of the first carrier of the first embodiment can be the same as the shape and size of the silicon wafer 20, and the positions of the multiple optical probes on the probe assembly 30 correspond to all the process measurement points 21 one by one. The light intensity data is measured by multiple light intensity test points to obtain the light intensity distribution data of all the process measurement points 21 of the silicon wafer 20. In one implementation structure of the first carrier, the first carrier can be an upper cover and a lower cover that are covered and connected to each other, and a sandwich is formed at the connection. The upper cover is provided with multiple probe holes 31 corresponding to all the process measurement points 21, and multiple optical probes are installed in the multiple probe holes 31 in a one-to-one correspondence to form multiple light intensity test points.

[0044] Embodiment 2:

[0045] Based on the characteristics of the process measurement points 21 of the silicon wafer 20 being distributed radially outward in circles with the dot as the center, and the characteristics of the light source assembly 12 rotating with the vertical direction as the central axis; please refer to Figure 5 The probe assembly 30 in the second embodiment can reduce most of the optical probes, thereby reducing the measurement cost.

[0046] The probe assembly 30 of the second embodiment includes a second carrier and a plurality of optical probes; the second carrier is provided with a plurality of probe holes 31 distributed side by side along a straight line; the plurality of optical probes are installed in the plurality of probe holes 31 in a one-to-one correspondence to form a plurality of light intensity test points.

[0047] In this embodiment, the second carrier is in the shape of an elongated strip, and a plurality of probe holes 31 are provided on the second carrier along the length direction; of course, the second carrier may also adopt the structure of the first carrier, and it is only necessary to install a corresponding number of optical probes in one row of straight probe holes 31 of the first carrier, and a plurality of light intensity test points in a straight row may also be formed.

[0048] In this embodiment, the edgemost point among the multiple light intensity test points is first matched with the rotation center axis of the light source component 12. At this time, a light intensity measurement is performed on the multiple light intensity test points to obtain a set of linearly distributed light intensity data. Then the light source component 12 is rotated by a certain angle (it can be rotated by the interval angle between the outermost process measurement points 21) and measured again to obtain another set of linearly distributed light intensity data. Similarly, by rotating the light source component 12 multiple times and measuring the light intensity each time, the multiple sets of light intensity data obtained can constitute light intensity data distributed radially outward in circles with the circle as the center; and the light intensity corresponding to the positions of all process measurement points 21 in the light intensity data is analyzed to restore and analyze the influence of light intensity on the process effect of the silicon wafer 20.

[0049] It should be understood that based on the distribution characteristics of the process measurement points 21 of the silicon wafer 20 (i.e., circular distribution), the distribution positions of the multiple light intensity test points on the second carrier are equivalent to the radius or diameter of the circle, and the distance between adjacent light intensity test points is the radial distance of the process measurement points 21 of the silicon wafer 20; in this way, after multiple measurements, the light intensity distribution data of all process measurement points 21 of the silicon wafer 20 can be obtained. In addition, most of the optical probes are reduced, effectively reducing the measurement cost.

[0050] Based on the contents of the above-mentioned embodiment 1 and embodiment 2, the influence of light intensity on the process effect of the silicon wafer 20 in the curing process is effectively restored.

[0051] Embodiment three:

[0052] Embodiment 3 measures the difference in light intensity between different light source assemblies 12 . By comparing the light intensity between different light source assemblies 12 , it is also possible to analyze whether there is a problem with any light source assembly 12 .

[0053] The probe assembly 30 of embodiment three includes a third carrier, an optical probe and a horizontal operation regulator; the third carrier is provided with a probe hole 31; the optical probe is installed in the probe hole 31 and forms a light intensity test point; the horizontal operation regulator is installed in the curing chamber 15, the horizontal operation regulator is connected to the third carrier and is used to drive the third carrier to move linearly in the horizontal direction.

[0054] In the third embodiment, the structure of the light source assembly 12 needs to be limited. The light source assembly 12 includes at least one ultraviolet lamp (preferably two and parallel in this embodiment); a reflective sheet is arranged above the ultraviolet lamp to reflect the light of the ultraviolet lamp into the curing chamber 15; the ultraviolet lamp is in a strip shape and is arranged parallel to the horizontal direction; the ultraviolet lamp is used to be parallel or perpendicular to the moving direction of the third carrier when the third carrier moves.

[0055] In this embodiment, the third carrier can be a carrier block, which only needs to have one probe hole 31, and an optical probe can be installed to form a light intensity test point. Of course, the third carrier can also use the structure of the first carrier or the second carrier, and only needs to install an optical probe in a probe hole 31 of the first carrier or the second carrier, so as to form only one light intensity test point.

[0056] In this embodiment, since the two ultraviolet lamps of the light source assembly 12 are parallel to the horizontal plane, in theory, when the ultraviolet lamp is parallel to the moving direction of the third carrier, the third carrier is driven to move by the horizontal operation regulator, and the distribution of light intensity obtained by multiple measurements during the movement is consistent, and when the ultraviolet lamp is perpendicular to the moving direction of the third carrier, the distribution of light intensity obtained by multiple measurements during the movement of the third carrier fluctuates according to a certain rule;

[0057] Based on this, for different light source assemblies 12, this light intensity measurement process is performed: when the ultraviolet light is parallel to the moving direction of the third carrier, the third carrier is driven to move linearly by the horizontal operation regulator, and the light intensity data is measured by the optical probe to obtain the light intensity distribution data in the first direction; and when the ultraviolet light is perpendicular to the moving direction of the third carrier, the third carrier is driven to move linearly by the horizontal operation regulator, and the light intensity data is measured by the optical probe to obtain the light intensity distribution data in the second direction, and the light intensity distribution data in the first direction and the light intensity distribution data in the second direction are combined to obtain the light intensity distribution data in the xy coordinate. In this way, the light intensity distribution data in the xy coordinate of each light source assembly 12 is obtained, which is used to analyze the light intensity differences between different light source assemblies 12.

[0058] like Figure 4 and Figure 5 , the height adjustment function of the probe assembly 30 is described in detail below.

[0059] In one embodiment, the light intensity measuring device further includes a height operation regulator 40 , which is installed in the curing chamber 15 . The height operation regulator 40 is connected to the probe assembly 30 and is used to drive the probe assembly 30 to move in a vertical direction.

[0060] In this embodiment, when the probe assembly 30 is used to measure the influence of light intensity during the reduction and curing process, the distance between the probe assembly 30 and the light source assembly 12 should also be restored to the distance between the silicon wafer 20 and the light source assembly 12; therefore, the probe assembly 30 of this embodiment is designed with a height adjustment function.

[0061] In this embodiment, the height operation adjuster 40 may include a base plate and a plurality of adjusting parts arranged on the side of the base plate. A sliding groove is provided on the adjusting part in the vertical direction. The outer side of the probe assembly 30 is slidably connected to the sliding grooves of the plurality of adjusting parts. The adjusting part has a tightness adjustment function and can lock or loosen the sliding groove of the probe assembly 30 to achieve sliding and locking in the height direction.

[0062] It should be understood that the above-mentioned horizontal operation regulator can be arranged at the bottom of the height operation regulator 40, that is, the horizontal operation regulator can be connected to the bottom plate of the height operation regulator 40, and when the horizontal operation regulator drives the height operation regulator 40 to move linearly, it can drive the probe assembly 30 to move synchronously linearly.

[0063] The present utility model embodiment provides a light intensity measurement method, which is applied to the probe assembly 30 of the above embodiment 1. Figure 6 As shown, the light intensity measurement method includes:

[0064] S601, controlling the light source assembly 12 to irradiate the curing chamber 15 with a preset power through the controller 14;

[0065] S602 , measuring light intensity data at a plurality of light intensity test points to obtain light intensity distribution data of all process measurement points 21 corresponding to the silicon wafer 20 .

[0066] This embodiment uses the probe assembly 30 described in the first embodiment to perform point-to-point light intensity measurement through multiple light intensity test points, thereby obtaining light intensity distribution data of all process measurement points 21 corresponding to the silicon wafer 20, thereby achieving comprehensive light intensity measurement analysis.

[0067] The present utility model embodiment provides a light intensity measurement method, which is applied to the probe assembly 30 of the above embodiment 2. Figure 7 As shown, the light intensity measurement methods include:

[0068] S701, controlling the light source assembly 12 to irradiate the curing chamber 15 with a preset power through the controller 14, and controlling the light source assembly 12 to rotate in a circle at a preset angle;

[0069] S702 , measuring the light intensity data of the light source assembly 12 at each preset angle by using a plurality of optical probes arranged side by side in a straight line, and obtaining the light intensity distribution data of all process measurement points 21 corresponding to the silicon wafer 20 .

[0070] This embodiment uses the probe assembly 30 described in the above-mentioned embodiment 2 to work. First, the edgemost point among the multiple light intensity test points is matched with the rotation center axis of the light source assembly 12. At this time, a light intensity measurement is performed at multiple light intensity test points to obtain a set of linearly distributed light intensity data. Then, the light source assembly 12 is rotated by a certain angle and measured again to obtain another set of linearly distributed light intensity data. By analogy, by rotating the light source assembly 12 multiple times and measuring the light intensity each time, the multiple sets of light intensity data obtained can constitute light intensity data distributed radially outward in circles with the dot as the center.

[0071] The present utility model embodiment provides a light intensity measurement method, which is applied to the probe assembly 30 of the above embodiment 3. Figure 8 As shown, the light intensity measurement methods include:

[0072] S801, controlling the light source assembly 12 to irradiate the curing chamber 15 with a preset power through the controller 14;

[0073] S802, controlling the light source assembly 12 to rotate by the controller 14 so that the ultraviolet light is parallel to or perpendicular to the moving direction of the third carrier;

[0074] S803, when the ultraviolet light is parallel to the moving direction of the third carrier, the third carrier is driven to move linearly by the horizontal operation regulator, and the light intensity data is measured by the optical probe to obtain the light intensity distribution data in the first direction;

[0075] S804, when the ultraviolet light is perpendicular to the moving direction of the third carrier, the third carrier is driven to move linearly by the horizontal operation regulator, and the light intensity data is measured by the optical probe to obtain the light intensity distribution data in the second direction;

[0076] S805 . Combine the light intensity distribution data in the first direction and the light intensity distribution data in the second direction to obtain light intensity distribution data in xy coordinates.

[0077] This embodiment uses the probe assembly 30 described in the third embodiment to work. For different light source assemblies 12 , the light intensity distribution data of the xy coordinates of each light source assembly 12 is obtained according to steps S801 to S805 to analyze the light intensity difference between different light source assemblies 12 .

[0078] The above is only a specific implementation of the utility model, but the protection scope of the utility model is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the utility model, and these modifications or replacements should be included in the protection scope of the utility model. Therefore, the protection scope of the utility model should be based on the protection scope of the claims.

Claims

1. A light intensity measuring device, characterized in that: Applied in the curing chamber of UV curing equipment for curing silicon wafers; The light intensity measuring device comprises: A probe assembly is installed in the curing chamber and is within the UV light range of the UV curing device; At least one light intensity test point is disposed on the probe assembly, and the position of the light intensity test point corresponds to a process measurement point of the silicon wafer.

2. The light intensity measuring device according to claim 1, characterized in that: The probe assembly comprises: The first bearing member is provided with a plurality of probe holes which are distributed in a circle radially outward with the dot as the center, and the positions of the plurality of probe holes correspond one by one to the process measurement points; A plurality of optical probes are installed in a one-to-one correspondence at a plurality of probe holes to form a plurality of light intensity test points.

3. The light intensity measuring device according to claim 2, characterized in that: The shape of the first carrier is adapted to the shape and size of the silicon wafer; the first carrier includes an upper cover and a lower cover, the upper cover and the lower cover are mutually covered and connected to form a sandwich at the connection, and a plurality of probe holes start from the upper cover.

4. The light intensity measuring device according to claim 1, characterized in that: The UV curing device comprises a light source assembly whose light irradiation direction faces the curing chamber, and the light source assembly is rotatably arranged with the vertical direction as the central axis; The process measurement points of the silicon wafer are distributed in circles radially outward with the circle as the center; Wherein, the probe assembly comprises: The second bearing member is provided with a plurality of probe holes distributed side by side along a straight line; A plurality of optical probes are installed in a one-to-one correspondence at the plurality of probe holes to form a plurality of light intensity test points.

5. The light intensity measuring device according to claim 4, characterized in that: The second carrier is in the shape of an elongated strip, and a plurality of probe holes are provided along the length direction of the second carrier.

6. The light intensity measuring device according to claim 1, characterized in that: The UV curing device comprises a light source assembly whose light irradiation direction faces the curing chamber, and the light source assembly is rotatably arranged with the vertical direction as the central axis; The process measurement points of the silicon wafer are distributed in circles radially outward with the circle as the center; Wherein, the probe assembly comprises: The third bearing member is provided with a probe hole; An optical probe is installed in the probe hole and forms a light intensity test point; A horizontal operation regulator is installed in the curing chamber, and the horizontal operation regulator is connected to the third bearing member and is used to drive the third bearing member to move linearly along the horizontal direction.

7. The light intensity measuring device according to claim 6, characterized in that: The light source assembly comprises: The purple light is in a strip shape and is arranged parallel to the horizontal direction; The ultraviolet lamp is used to be parallel or perpendicular to the moving direction of the third supporting member when the third supporting member moves.

8. The light intensity measuring device according to claim 1, characterized in that: Also includes: A height operation regulator is installed in the curing chamber, and the height operation regulator is connected to the probe assembly and is used to drive the probe assembly to move in a vertical direction.

9. The light intensity measuring device according to claim 8, characterized in that: The height operating regulator comprises: Base plate; A plurality of adjusting members are arranged on the side of the bottom plate; The adjusting member has a sliding groove formed on it in the vertical direction, the outer side of the probe assembly is slidably connected to the sliding grooves of the adjusting members, and the adjusting member is used to adjust the installation position of the probe assembly in the vertical direction.

10. A UV curing device, characterized in that: include: An optical table, wherein a curing cavity is provided inside and a light-transmitting window corresponding to the curing cavity is provided on the top surface; A light source assembly, mounted on the optical bench and located above the light-transmitting window; A driving member, mounted on the optical bench and located at one side of the light source assembly, the driving member being connected to the light source assembly and used to drive the light source assembly to rotate with the vertical direction as the central axis; A controller connected to the light source assembly and the driving member; Wherein, the curing chamber is used for placing the silicon wafer to be cured or the light intensity measuring device as described in claim 1.

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