Temperature monitoring device

Abstract

The utility model provides a temperature monitoring device which is used for monitoring the temperature of a wafer after annealing of annealing equipment, and the device comprises an infrared temperature measurement probe which is opposite to the wafer and is used for collecting the real-time temperature of the wafer; the data transmission module is electrically connected with the infrared temperature measurement probe, and the data transmission module is used for acquiring and uploading the real-time temperature; the controller is connected with the data transmission module, and the controller is used for receiving the real-time temperature uploaded by the data transmission module; and when the real-time temperature exceeds a preset temperature, generating an over-temperature alarm signal, and controlling the annealing equipment to stop working. According to the invention, the real-time temperature of the annealed and cooled wafer can be collected in real time and accurately monitored, the abnormality of the process can be found in time, and the product yield is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a temperature monitoring device. Background Art

[0002] In the back-end process of chip preparation, copper wires are arranged in the wafer through Damascus process wiring, and the copper wires are polished by chemical mechanical polishing equipment to accurately control the thickness of the copper wires. After polishing, the copper wires need to be annealed to release stress, improve electromigration, and reduce resistance. After the wafer is annealed, it needs to be cooled before it can be exposed to air, otherwise the surface will oxidize due to excessive temperature, forming copper oxide, which will cause abnormal chip testing and cause the wafer to be scrapped.

[0003] In the related art, after the annealing equipment processes the wafer in a high temperature environment, the wafer can be cooled by a cold plate in a vacuum chamber. Specifically, the wafer is placed on a quartz bead on the cold plate, and the temperature of the wafer is lowered by a water cooling system in the cold plate to achieve the cooling purpose.

[0004] However, the height difference between the inner and outer circles of the quartz beads on the cold plate will significantly affect the cooling effect of the wafer; at the same time, as the cold plate is used for a longer time, the quartz beads will wear out, which will also affect the cooling effect of the wafer. In this way, after the preset cooling time for the wafer, the wafer temperature may still be too high, which may cause the wafer surface to oxidize and cause the wafer to be scrapped. In addition, when the hardware of the annealing equipment fails, if the annealing equipment software does not recognize the hardware failure, abnormal wafer cooling may occur, causing the wafer to be scrapped.

[0005] Therefore, how to monitor the cooling effect is an urgent problem to be solved. Utility Model Content

[0006] The technical problem to be solved by this application is that the existing technology cannot monitor the cooling effect of the wafer. In order to solve the above technical problem, this application provides a temperature monitoring device for monitoring the temperature of the wafer after annealing by the annealing equipment, including: an infrared temperature measuring probe, the infrared temperature measuring probe is arranged relative to the wafer, and the infrared temperature measuring probe is used to collect the real-time temperature of the wafer; a data transmission module, the data transmission module is electrically connected to the infrared temperature measuring probe, and the data transmission module is used to obtain and upload the real-time temperature; a controller, the controller is connected to the data transmission module, and the controller is used to receive the real-time temperature uploaded by the data transmission module; when the real-time temperature exceeds the preset temperature, an over-temperature alarm signal is generated, and the annealing equipment is controlled to stop working.

[0007] In some embodiments of the present application, the annealing equipment includes an equipment front-end module, and the infrared temperature measuring probe is arranged in the equipment front-end module through a bracket.

[0008] In some embodiments of the present application, the annealing equipment includes a vacuum chamber, the vacuum chamber is adjacent to the front-end module of the equipment, and the bracket is arranged above the gate valve of the vacuum chamber.

[0009] In some embodiments of the present application, the bracket is an L-shaped support structure, and the L-shaped support structure includes a first arm and a second arm; the first arm is fixedly arranged on the inner side of the front-end module of the device, and the data transmission module and the controller are fixedly arranged on the first arm; one end of the second arm is fixedly connected to the first arm, and the infrared temperature measuring probe is arranged at the other end of the second arm.

[0010] In some embodiments of the present application, the angle between the first arm and the second arm is any angle between 90° and 120°.

[0011] In some embodiments of the present application, the annealing equipment includes a display panel, which is electrically connected to the controller, and the display panel is used to display the real-time temperature.

[0012] In some embodiments of the present application, the data transmission module is a wireless transmission module, and the data transmission module is wirelessly connected to the controller.

[0013] In some embodiments of the present application, the transmission mode of the wireless transmission module is one or more of GPRS, 2G, 5G, WiFi, ZigBee, FM, and Bluetooth.

[0014] In some embodiments of the present application, the controller is wirelessly connected to a fault data acquisition system, and the controller is further configured to upload the real-time temperature to the fault data acquisition system when the real-time temperature exceeds a preset temperature.

[0015] In some embodiments of the present application, the temperature monitoring device further includes: a power supply, which is electrically connected to the infrared temperature measuring probe, the data transmission module and the controller respectively.

[0016] Compared with the prior art, the technical solution of the present application includes the infrared temperature measuring probe, the data transmission module and the controller. The infrared temperature measuring probe collects the real-time temperature of the wafer in an infrared temperature measuring manner, and the real-time temperature is uploaded to the controller through the data transmission module. The controller receives the real-time temperature uploaded by the data transmission module. When the real-time temperature exceeds the preset temperature, an over-temperature alarm signal is generated, and the annealing equipment is controlled to stop working. In this way, the real-time temperature of the wafer after annealing and cooling can be collected and accurately monitored in real time, and process abnormalities can be discovered in time to improve product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The following figures describe in detail the exemplary embodiments disclosed in this application. The same reference numerals represent similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting, exemplary embodiments, and the drawings are only for the purpose of illustration and description, and are not intended to limit the scope of this application. Other embodiments may also accomplish the inventive intent in this application. It should be understood that the drawings are not drawn to scale.

[0018] Figure 1 is a schematic structural diagram of a temperature monitoring device according to some embodiments of the present application;

[0019] Figure 2 is a schematic structural diagram of another temperature monitoring device according to some embodiments of the present application;

[0020] Explanation of the accompanying drawings: 11-infrared temperature measuring probe, 12-wafer, 13-data transmission module, 14-controller, 15-display panel, 16-fault data acquisition system, 21-equipment front-end module, 22-bracket, 23-vacuum chamber, 24-gate valve, 221-first arm and 222-second arm. DETAILED DESCRIPTION

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of the present application. For ordinary technicians in this field, the present application can also be applied to other similar scenarios based on these drawings without creative work. Unless it is obvious from the language environment or otherwise explained, the same reference numerals in the figures represent the same structure or operation. It should be clearly understood that the drawings are only for the purpose of illustration and description and are not intended to limit the scope of disclosure of this specification.

[0022] It should be understood that the "module" and "circuit" used herein are a method for distinguishing different components, elements, parts, portions or assemblies at different levels. However, if other words can achieve the same purpose, the words can be replaced by other expressions.

[0023] The terms used in this application are only used for the purpose of describing specific example embodiments and are not restrictive. When used in this specification, the terms "include", "comprise" and / or "contain" mean the existence of the associated integers, steps, operations, elements and / or components, but do not exclude the existence of one or more other features, integers, steps, operations, elements, components and / or groups or the addition of other features, integers, steps, operations, elements, components and / or groups in the temperature monitoring device. When describing the association of different components in this specification, it can be a direct relationship or an indirect relationship. For example, "A and B are connected" can mean that A and B are directly connected, or A and B are indirectly connected through other components.

[0024] In the related art, after the annealing equipment processes the wafer in a high-temperature environment, the wafer can be cooled by a cold plate in a vacuum chamber. The height difference between the inner and outer circles of the quartz beads on the cold plate will significantly affect the cooling effect of the wafer; at the same time, as the cold plate is used for a longer time, the quartz beads will wear out, which will also affect the cooling effect of the wafer. In this way, after the wafer is cooled for a preset cooling time, the wafer temperature may still be too high, which may cause oxidation of the wafer surface and cause the wafer to be scrapped. In addition, when the hardware of the annealing equipment fails, if the annealing equipment software does not identify the hardware failure, abnormal wafer cooling may occur, causing the wafer to be scrapped.

[0025] Therefore, after the annealing process, it is necessary to obtain the real-time temperature of the wafer and monitor the cooling effect of the wafer, so as to monitor the cooling effect of the wafer, discover abnormal processes in time, and improve product yield.

[0026] Based on the above analysis, if Figure 1 As shown, the temperature monitoring device provided in the embodiment of the present application is used to monitor the temperature of the wafer after annealing by the annealing equipment, and may include:

[0027] An infrared temperature measuring probe 11, wherein the infrared temperature measuring probe 11 is arranged opposite to the wafer 12, and the infrared temperature measuring probe 11 is used to collect the real-time temperature of the wafer 12;

[0028] A data transmission module 13, the data transmission module 13 is electrically connected to the infrared temperature measuring probe 11, and the data transmission module 13 is used to obtain and upload the real-time temperature;

[0029] The controller 14 is connected to the data transmission module 13, and is used to receive the real-time temperature uploaded by the data transmission module 13; when the real-time temperature exceeds the preset temperature, an over-temperature alarm signal is generated, and the annealing equipment is controlled to stop operating.

[0030] In the embodiment of the present application, the infrared temperature measuring probe 11 includes a metal shell, optical components, a photoelectric detection circuit, a signal amplification circuit and a signal processing circuit, and can be applied to the temperature measurement process in related fields such as electricity, metallurgy, petrochemicals and semiconductor production. The infrared temperature measuring probe 11 gathers the target infrared radiation energy within its field of view through optical components, and the target infrared radiation energy is focused on the photoelectric detection circuit and converted into a corresponding temperature electrical signal. The temperature electrical signal passes through the signal amplification circuit and the signal processing circuit, and is converted into the real-time temperature of the wafer 12 after correction according to the preset algorithm and the target emissivity.

[0031] In the embodiment of the present application, the infrared temperature measuring probe 11 is arranged opposite to the wafer 12, and the infrared temperature measuring probe 11 can directly receive the infrared radiation emitted by the wafer 12 through the air. That is, the infrared temperature measuring probe 11 can collect the real-time temperature of the wafer 12 without contacting the wafer 12. In this way, the infrared temperature measuring probe 11 is not limited by the temperature of the metal housing, optical components, photoelectric detection circuits, signal amplification circuits, signal processing circuits and other components themselves, and the temperature range that can be collected (such as 0°C to 500°C) is relatively wide.

[0032] In the embodiment of the present application, the infrared temperature measuring probe 11 and the data transmission module 13 can be electrically connected in a wired manner. The data transmission module 13 obtains the real-time temperature of the wafer collected by the infrared temperature measuring probe 11 and uploads the real-time temperature to the controller 14.

[0033] In the embodiment of the present application, the data transmission module 13 and the controller 14 can also be electrically connected by wire. The controller 14 can independently control and receive the real-time temperature, and when the real-time temperature exceeds the preset temperature, generate an over-temperature alarm signal, and control the annealing device to stop working. The controller 14 can be a controller multiplexed control in the annealing device to receive the real-time temperature, and when the real-time temperature exceeds the preset temperature, generate an over-temperature alarm signal, and control the annealing device to stop working.

[0034] It is understandable that the controller 14 can also store the real-time temperature to facilitate statistics on the changes in the real-time temperature of different wafers 12 and predict whether there is device aging or wear in the annealing equipment, so as to facilitate maintenance of the equipment before the annealing equipment fails.

[0035] In some embodiments of the present application, the data transmission module 13 is a wireless transmission module, and the data transmission module 13 is wirelessly connected to the controller 14. Specifically, the data transmission module 13 includes a wireless transmission module, and correspondingly, the controller 14 includes a wireless receiving module.

[0036] In this way, even if the physical distance between the data transmission module 13 and the controller 14 is far, the real-time temperature transmitted wirelessly can ensure the accuracy of the transmitted real-time temperature by adding a check code, a three-way handshake mechanism and increasing the carrier frequency.

[0037] In some embodiments of the present application, the transmission mode of the wireless transmission module 13 is one or more of GPRS, 2G, 5G, WiFi, ZigBee, FM, and Bluetooth.

[0038] It can be understood that when selecting the transmission mode of the wireless transmission module 13, interference signals such as noise, electromagnetic signals and infrared signals that appear during the operation of the annealing setting can be obtained, the interference frequency domain where the interference signal is located can be analyzed, and the transmission mode with the least interference to the transmission signal (the real-time temperature) can be selected according to the interference frequency domain.

[0039] In some embodiments of the present application, Figure 1 As shown, the annealing device includes a display panel 15, which is electrically connected to the controller 14, and the display panel 15 is used to display the real-time temperature.

[0040] In this way, the operator can observe the real-time temperature through the display panel 15, so as to judge the possible fault of the annealing equipment according to the real-time temperature.

[0041] In some embodiments of the present application, Figure 1 As shown, the controller 14 is wirelessly connected to the fault data acquisition system 16 , and the controller 14 is also used to upload the real-time temperature to the fault data acquisition system 16 when the real-time temperature exceeds the preset temperature.

[0042] In this way, the fault data collection system 16 records the fault status of the annealing equipment by receiving the real-time temperature exceeding the preset temperature, so that the operating personnel can perform fault detection and maintenance on the annealing equipment.

[0043] In some embodiments of the present application, Figure 1 As shown, the temperature monitoring device further includes: a power supply 17, and the power supply 17 is electrically connected to the infrared temperature measuring probe 11, the data transmission module 13 and the controller 14 respectively.

[0044] In this way, the infrared temperature measuring probe 11 , the data transmission module 13 and the controller 14 are powered by the power supply 17 to ensure that the temperature monitoring device can monitor the real-time temperature of the wafer 12 after annealing.

[0045] In some embodiments of the present application, Figure 2 As shown, the annealing equipment includes an equipment front-end module 21 , and the infrared temperature measuring probe 11 is arranged in the equipment front-end module 21 through a bracket 22 .

[0046] In the embodiment of the present application, the equipment front end module (EFEM) 21 refers to a wafer front end transmission system that transmits a single wafer to a process and detection module through a precision robot in a high clean environment.

[0047] In an embodiment of the present application, during the annealing process, the equipment front-end module 21 is the equipment space for transmitting the wafer 12, and the infrared temperature measuring probe 11 is arranged in the equipment front-end module 21, that is, a temperature monitoring device is installed in the original equipment space, which can increase the space utilization rate of the annealing equipment.

[0048] In some embodiments of the present application, Figure 2 As shown, the annealing equipment includes a vacuum chamber 23 , which is adjacent to the equipment front-end module 21 , and the bracket 22 is arranged above the gate valve 24 of the vacuum chamber 23 .

[0049] In the embodiment of the present application, after the wafer 12 is annealed and cooled, the wafer 12 is transferred to the device front-end module 21 through the gate valve 24 of the vacuum chamber 23. The bracket 22 is arranged in the device front-end module 21 and above the gate valve 24 of the vacuum chamber 23.

[0050] In this way, the bracket 22 is arranged above the gate valve 24 of the vacuum chamber 23, and the wafer 12 can be directly transferred to the front-end module 21 of the equipment, and the real-time temperature of the wafer 12 can be measured instantly, so that the real-time temperature can accurately reflect the wafer cooling effect of the cooling system on the wafer 12.

[0051] In some embodiments of the present application, Figure 2 As shown, the bracket 22 is an L-shaped support structure, and the L-shaped support structure includes a first arm 221 and a second arm 222;

[0052] The first arm 221 is fixedly arranged inside the device front-end module 21, and the data transmission module 13 and the controller 14 are fixedly arranged on the first arm 221;

[0053] One end of the second arm 222 is fixedly connected to the first arm 221 , and the infrared temperature measuring probe 11 is disposed at the other end of the second arm 222 .

[0054] In the embodiment of the present application, the infrared temperature measuring probe 11 is arranged on the second arm 222, so that the infrared temperature measuring probe 11 can be kept away from the side wall inside the front-end module 21 of the device, thereby increasing the field of view of the infrared temperature measuring probe 11 and improving the accuracy of the real-time temperature collected by the infrared temperature measuring probe 11.

[0055] In some embodiments of the present application, the angle between the first arm and the second arm is any angle between 90° and 120°.

[0056] In the embodiment of the present application, the first arm 221 and the second arm 222 form the L-shaped support structure, which can increase the stability of the bracket 22 .

[0057] In some embodiments of the present application, the L-shaped support structure also includes a reinforcing support wall, one end of which is fixedly connected to the first support arm 221, and the other end of which is connected to the second support arm 222. The reinforcing support wall and part of the first support arm 221 and part of the second support arm 222 form a triangular structure, thereby further increasing the stability of the bracket 22.

[0058] The embodiment of the present application provides a temperature monitoring device, including the infrared temperature measuring probe 11, the data transmission module 13 and the controller 14. The infrared temperature measuring probe 11 collects the real-time temperature of the wafer 12 in an infrared temperature measuring manner, and the real-time temperature is uploaded to the controller 14 through the data transmission module 13. The controller receives the real-time temperature uploaded by the data transmission module; when the real-time temperature exceeds the preset temperature, an over-temperature alarm signal is generated, and the annealing equipment is controlled to stop working. In this way, the real-time temperature of the wafer 12 after annealing and cooling can be collected and accurately monitored in real time, and the abnormality of the process can be discovered in time, thereby improving the product yield.

[0059] It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects that may be produced may be any one or a combination of the above, or any other possible beneficial effects.

[0060] In summary, after reading the contents of this application, those skilled in the art will appreciate that the aforementioned application contents may be presented only in an exemplary manner and may not be restrictive. Although not explicitly stated herein, those skilled in the art will appreciate that this application is intended to encompass various reasonable changes, improvements and modifications to the embodiments. These changes, improvements and modifications are within the spirit and scope of the exemplary embodiments of this application.

[0061] It should also be understood that although the terms first, second, third, etc. can be used to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Therefore, without departing from the teachings of the present application, the first element in some embodiments can be referred to as the second element in other embodiments. The same reference numerals or the same reference signs represent the same elements throughout the specification.

Claims

1. A temperature monitoring device for monitoring the temperature of a wafer after annealing by an annealing device, characterized in that: include: An infrared temperature measuring probe, which is arranged opposite to the wafer and is used to collect the real-time temperature of the wafer; A data transmission module, the data transmission module is electrically connected to the infrared temperature measuring probe, and the data transmission module is used to obtain and upload the real-time temperature; A controller is connected to the data transmission module, and is used to receive the real-time temperature uploaded by the data transmission module; when the real-time temperature exceeds a preset temperature, an over-temperature alarm signal is generated, and the annealing equipment is controlled to stop operating.

2. The temperature monitoring device according to claim 1, characterized in that: The annealing equipment comprises an equipment front-end module, and the infrared temperature measuring probe is arranged in the equipment front-end module through a bracket.

3. The temperature monitoring device according to claim 2, characterized in that: The annealing equipment comprises a vacuum chamber, the vacuum chamber is adjacent to the front-end module of the equipment, and the bracket is arranged above the gate valve of the vacuum chamber.

4. The temperature monitoring device according to claim 3, characterized in that: The bracket is an L-shaped support structure, and the L-shaped support structure includes a first arm and a second arm; The first arm is fixedly arranged inside the front-end module of the device, and the data transmission module and the controller are fixedly arranged on the first arm; One end of the second arm is fixedly connected to the first arm, and the infrared temperature measuring probe is arranged at the other end of the second arm.

5. The temperature monitoring device according to claim 4, characterized in that: The included angle between the first support arm and the second support arm is any angle between 90° and 120°.

6. The temperature monitoring device according to claim 1, characterized in that: The annealing equipment includes a display panel, which is electrically connected to the controller and is used to display the real-time temperature.

7. The temperature monitoring device according to claim 1, characterized in that: The data transmission module is a wireless transmission module, and the data transmission module is wirelessly connected to the controller.

8. The temperature monitoring device according to claim 7, characterized in that: The transmission mode of the wireless transmission module is one or more of GPRS, 2G, 5G, WiFi, ZigBee, FM, and Bluetooth.

9. The temperature monitoring device according to claim 6, characterized in that: The controller is wirelessly connected to the fault data acquisition system, and the controller is also used to upload the real-time temperature to the fault data acquisition system when the real-time temperature exceeds a preset temperature.

10. The temperature monitoring device according to claim 1, characterized in that: Also includes: A power supply is electrically connected to the infrared temperature measuring probe, the data transmission module and the controller respectively.

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