Bonding device for wafer bonding

Abstract

The utility model provides a bonding device for wafer bonding. The bonding device comprises a cavity, and a first pressure plate assembly, a second pressure plate assembly and a telescoping mechanism which are arranged in the cavity. The telescopic mechanism is arranged at the top of the cavity, the telescopic mechanism is provided with a telescopic part, and the telescopic part can stretch out and draw back towards the bottom of the cavity; the first pressure plate assembly is arranged on the telescopic part, and the first pressure plate assembly is used for adsorbing a first wafer and can heat the first wafer; and the second pressure plate assembly is located at the bottom of the cavity and is coaxial with the first pressure plate assembly, and the second pressure plate assembly is used for bearing a second wafer and can heat the second wafer. And in a working state, the telescopic part drives the first pressure plate assembly to move towards the second pressure plate assembly until the first wafer is in contact with the second wafer. The bonding device provided by the utility model improves the bonding strength of the wafer, thereby improving the reliability of the wafer after bonding.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a bonding device for wafer bonding. Background Art

[0002] Today's wafer bonding technology has become an indispensable part of semiconductor technology. Wafer bonding technology refers to the process of tightly bonding two homogeneous or heterogeneous wafers together through chemical and physical effects. The quality of the bonding process will directly affect the performance of the semiconductor device formed. The wafer bonding method generally requires heating the two wafers to make the adhesive layers on the surfaces of the two wafers fuse with each other, and applying pressure to bond the two wafers together to achieve a specific bonding strength. With the continuous reduction in chip size and the continuous improvement in integration, wafer bonding technology is also constantly developing and innovating. The emergence of new bonding materials and processes has enabled it to be widely used in electronics, optoelectronics and other fields.

[0003] Existing wafer bonding equipment cannot guarantee the strength of two wafers after bonding, resulting in problems with the structure of the wafers after bonding. Utility Model Content

[0004] The utility model aims to provide a bonding device for wafer bonding, so as to improve the strength of wafer bonding, thereby improving the reliability of wafer bonding.

[0005] To achieve the above-mentioned object, in a first aspect, the utility model provides a bonding device for wafer bonding, comprising a cavity and a first pressure plate assembly, a second pressure plate assembly and a telescopic mechanism arranged in the cavity;

[0006] The telescopic mechanism is arranged at the top of the cavity, and the telescopic mechanism has a telescopic portion, and the telescopic portion can be telescoped toward the bottom of the cavity;

[0007] The first pressure plate assembly is disposed on the telescopic portion, and the first pressure plate assembly is used to absorb the first wafer and heat the first wafer;

[0008] The second pressure plate assembly is located at the bottom of the cavity and is coaxially arranged with the first pressure plate assembly. The second pressure plate assembly is used to carry a second wafer and can heat the second wafer.

[0009] In the working state, the telescopic portion drives the first pressure plate assembly to move toward the second pressure plate assembly until the first wafer contacts the second wafer.

[0010] In some embodiments, the first platen assembly includes a first platen and a first heating platen;

[0011] The first heating plate is coaxially arranged with the first pressing plate, and the first heating plate is close to the telescopic portion, and the first heating plate is used to heat the first pressing plate;

[0012] The first pressure plate is provided with a first adsorption hole, the first adsorption hole extends to the adsorption surface of the first pressure plate, and the adsorption surface of the first pressure plate adsorbs the first wafer through the first adsorption hole.

[0013] In some embodiments, a first vacuum groove is provided on the adsorption surface of the first pressure plate, and a first fluid channel is provided inside the first pressure plate; the first vacuum groove extends radially along the first pressure plate and one end is connected to the first adsorption hole, and the first fluid channel is used to introduce cooling liquid to reduce the temperature of the first pressure plate.

[0014] In some embodiments, the first platen assembly further comprises a first vacuum connection;

[0015] The first heating plate is provided with a first mounting hole corresponding to the first adsorption hole;

[0016] The first vacuum joint is arranged in the first mounting hole, and one end of the first vacuum joint is communicated with the first adsorption hole, and the other end of the first vacuum joint is used to communicate with an external vacuum generator.

[0017] In some embodiments, the first platen assembly further comprises a first temperature sensor;

[0018] The first pressure plate is provided with a first mounting groove;

[0019] The first temperature sensor is disposed in the first mounting groove and is used to detect the temperature on the first pressure plate.

[0020] In some embodiments, the first heating plate has a plurality of first heating areas, and the heating temperature of each first heating area is controlled separately;

[0021] The first pressure plate is provided with a plurality of first installation grooves corresponding to the first heating area, and each of the first installation grooves is provided with the first temperature sensor.

[0022] In some embodiments, the first pressure plate assembly further includes a first insulation plate connected to the telescopic portion, the first insulation plate is disposed on the first heating plate, and the first insulation plate and the first pressure plate are respectively located on two sides of the first heating plate.

[0023] In some embodiments, the first insulation plate is provided with a plurality of first insulation regions corresponding to the first heating region, a first cooling channel is opened in the first insulation region, the first cooling channel is used for passing a cooling medium, and the cooling temperature of each first insulation region is controlled separately.

[0024] In some embodiments, the first pressure plate assembly further includes a first sealing ring, and the first sealing ring is disposed between the first pressure plate and the first heating plate.

[0025] In some embodiments, the second platen assembly includes a second platen and a second heating platen;

[0026] The second heating plate is stacked with the second pressing plate, and the second pressing plate is close to the first pressing plate, and the second heating plate is used to heat the second pressing plate;

[0027] The second pressure plate is provided with a second adsorption hole, the second adsorption hole extends to the adsorption surface of the second pressure plate, and the adsorption surface of the second pressure plate adsorbs the second wafer through the second adsorption hole.

[0028] In some embodiments, a second vacuum groove is provided on the adsorption surface of the second pressure plate, a second fluid channel is provided inside the second pressure plate, the second vacuum groove extends radially along the second pressure plate and one end is connected to the second adsorption hole, and the second fluid channel is used to introduce cooling liquid to reduce the temperature of the second pressure plate.

[0029] In some embodiments, the second platen assembly further comprises a second vacuum connection;

[0030] The second heating plate is provided with a second mounting hole corresponding to the second adsorption hole;

[0031] The second vacuum connector is arranged in the second mounting hole, and one end of the second vacuum connector is connected to the second adsorption hole, and the other end of the second vacuum connector is used to communicate with an external vacuum generator.

[0032] In some embodiments, the second platen assembly further comprises a second temperature sensor;

[0033] The second pressure plate is provided with a second mounting groove;

[0034] The second temperature sensor is disposed in the second mounting groove and is used to detect the temperature on the second pressure plate.

[0035] In some embodiments, the second heating plate has a plurality of second heating areas, and the heating temperature of each second heating area is controlled separately;

[0036] The second pressure plate is provided with a plurality of second installation grooves corresponding to the second heating area, and each of the second installation grooves is provided with the second temperature sensor.

[0037] In some embodiments, the second pressure plate assembly further includes a second insulation plate connected to the bottom of the cavity, the second heating plate is disposed on the second insulation plate, and the second insulation plate and the second pressure plate are respectively located on two sides of the second heating plate.

[0038] In some embodiments, the second insulation disk is provided with a plurality of second insulation areas corresponding to the second heating area, and a second cooling channel is opened in the second insulation area, and the second cooling channel is used to pass cooling medium, and the cooling temperature of each second insulation area is controlled separately.

[0039] In some embodiments, the second platen assembly is provided with a retractable support pin;

[0040] The supporting pins are used to support the second wafer when extended.

[0041] In some embodiments, the bonding device further comprises a pressure sensor disposed on the first pressure plate assembly, the pressure sensor being located between the telescopic portion and the first pressure plate assembly and being electrically connected to the telescopic mechanism;

[0042] In a working state, the telescopic portion drives the first pressure plate assembly to move toward the second pressure plate assembly so that the first wafer is in contact with the second wafer, and the pressure sensor is used to detect the pressure when the first wafer is in contact with the second wafer.

[0043] The bonding device for wafer bonding provided by the utility model has the following beneficial effects:

[0044] 1. The uniformity of heating the first wafer by the first pressure plate assembly and the second wafer by the second pressure plate assembly is ensured, thereby improving the strength of wafer bonding.

[0045] 2. The pressure when the first wafer and the second wafer are bonded can be detected in real time, so as to facilitate the control of the pressure when the bonding device is working, thereby ensuring the strength of the wafers during bonding, thereby improving the reliability of the wafers after bonding. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 A schematic structural diagram of a bonding device for wafer bonding according to an embodiment of the utility model;

[0047] Figure 2 A schematic diagram of the structure of the first wafer and the second wafer when pre-bonding is performed in the embodiment provided by the utility model;

[0048] Figure 3 A schematic diagram of the structure of the first wafer and the second wafer when bonding in the embodiment provided by the utility model;

[0049] Figure 4A schematic diagram of the structure of the first pressure plate assembly of the embodiment provided by the utility model under two viewing angles;

[0050] Figure 5 A cross-sectional view of the first pressure plate assembly of the embodiment provided by the utility model along its axial direction;

[0051] Figure 6 A schematic diagram of the structure of the second pressure plate assembly of the embodiment provided by the utility model under two viewing angles;

[0052] Figure 7 A cross-sectional view of the second pressure plate assembly of the embodiment provided by the utility model along its axial direction;

[0053] Figure 8 This is a partial schematic diagram of the installation location of the third sealing ring in the embodiment provided by the utility model.

[0054] Cavity 1, first pressure plate assembly 2, first pressure plate 21, first adsorption hole 211, first vacuum groove 212, first heating plate 22, first vacuum joint 23, first temperature sensor 24, first insulation plate 25, first cooling inlet 251, first cooling outlet 252, first cooling channel 253, first sealing ring 26, second pressure plate assembly 3, second pressure plate 31, second adsorption hole 311, second vacuum groove 312, through hole 313, second heating plate 32, second vacuum joint 33, second temperature sensor 34, second insulation plate 35, second cooling inlet 351, second cooling outlet 352, second cooling channel 353, second sealing ring 36, support needle 37, third sealing ring 38, telescopic mechanism 4, telescopic part 41, first wafer 5, second wafer 6, pressure sensor 7, heating wire 8, connecting part 9. DETAILED DESCRIPTION

[0055] In order to make the purpose, technical solution and advantages of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings of the utility model. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model. Unless otherwise defined, the technical terms or scientific terms used herein should be the usual meanings understood by people with general skills in the field to which the utility model belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Unless otherwise specified, the "connection" described in this article can be a direct connection or an indirect connection, that is, a connection through an intermediate.

[0056] In view of the problems existing in the prior art, the embodiment of the present utility model provides a bonding device for wafer bonding, referring to Figures 1 to 3 As shown, the bonding device includes a cavity 1 and a first pressure plate assembly 2, a second pressure plate assembly 3 and a telescopic mechanism 4 arranged in the cavity 1. The telescopic mechanism 4 is arranged at the top of the cavity 1, and the telescopic mechanism 4 has a telescopic portion 41, and the telescopic portion 41 can be telescoped toward the bottom of the cavity 1. The first pressure plate assembly 2 is arranged at the telescopic portion 41, and the first pressure plate assembly 2 is used to adsorb the first wafer 5 and heat the first wafer 5. The second pressure plate assembly 3 is located at the bottom of the cavity 1 and is coaxially arranged with the first pressure plate assembly 2. The second pressure plate assembly 3 is used to carry the second wafer 6 and heat the second wafer 6. In the working state, the telescopic portion 41 drives the first pressure plate assembly 2 to move toward the second pressure plate assembly 3 until the first wafer 5 and the second wafer 6 are in contact.

[0057] In this embodiment, the telescopic mechanism 4 includes a controller and a telescope, the telescope has the telescopic part 41, and the controller is used to control the telescopic part 41 to extend and retract. When two wafers need to be bonded, the first wafer 5 is placed on the first pressure plate assembly 2, and the second wafer 6 is placed on the second pressure plate assembly 3, and then the first wafer 5 and the second wafer 6 are heated respectively, and then the second pressure plate assembly 3 lifts the second wafer 6 through the support needle 37 until it is pre-bonded with the first wafer 5. When the second wafer 6 is bonded with the first wafer 5, the support needle 37 retracts, and finally the controller controls the telescopic part 41 to descend according to the set pressure value, so that the first wafer 5 and the second wafer 6 are bonded according to the set pressure to ensure the bonding strength of the two wafers.

[0058] In addition, in order to ensure the consistency of the bonding adhesive thickness between the two wafers, the flatness of the surface of the first pressure plate assembly 2 used to adsorb the first wafer 5 and the surface of the second pressure plate assembly 3 used to adsorb the second wafer 6 are both set to be less than 2 μm.

[0059] refer to Figure 2 , Figure 4 and Figure 5 As shown, in some embodiments, the first pressure plate assembly 2 includes a first pressure plate 21 and a first heating plate 22. The first heating plate 22 is coaxially arranged with the first pressure plate 21, and the first heating plate 22 is close to the telescopic portion 41, and the first heating plate 22 is used to heat the first pressure plate 21. The first pressure plate 21 is provided with a first adsorption hole 211, and the first adsorption hole 211 extends to the adsorption surface of the first pressure plate 21, and the adsorption surface of the first pressure plate 21 adsorbs the first wafer 5 through the first adsorption hole 211.

[0060] Specifically, the first adsorption hole 211 is provided at the central axis of the first pressure plate 21, and a plurality of first vacuum grooves 212 are provided on the adsorption surface of the first pressure plate 21. The plurality of first vacuum grooves 212 extend radially along the first pressure plate 21 at intervals and are all connected to the first adsorption hole 211 at one end. The first pressure plate assembly 2 also includes a first vacuum joint 23. The first heating plate 22 is provided with a first mounting hole corresponding to the first adsorption hole 211. The first vacuum joint 23 is provided in the first mounting hole, and one end is connected to the first adsorption hole 211, and the other end is used to connect to an external vacuum generator. A first fluid channel may also be provided inside the first pressure plate 21, and the first fluid channel is used to introduce a coolant to reduce the temperature of the first pressure plate 21.

[0061] In this embodiment, the first vacuum connector 23 is connected to an external vacuum generator to provide an adsorption force for the adsorption surface of the first pressure plate 21 to adsorb the first wafer 5. After the first wafer 5 is adsorbed and fixed, the first heating plate 22 is used to heat the first pressure plate 21, and the first pressure plate 21 transfers heat to the first wafer 5, thereby heating the first wafer 5.

[0062] In some embodiments, the first pressure plate assembly 2 further includes a first temperature sensor 24 , and a first mounting groove is provided on the first pressure plate 21 . The first temperature sensor 24 is provided in the first mounting groove and is used to detect the temperature on the first pressure plate 21 .

[0063] In this embodiment, by setting the first temperature sensor 24 on the first pressure plate 21, the actual temperature on the first pressure plate 21 can be detected in real time. The staff can determine whether the temperature during wafer bonding reaches the target temperature by receiving the actual temperature value detected by the first temperature sensor 24. When the actual temperature is lower than the target temperature, the heating temperature of the first heating plate 22 can be increased so that the temperature of the first pressure plate 21 reaches the target temperature to improve the strength of wafer bonding. Similarly, when the actual temperature is higher than the target temperature, the heating temperature of the first heating plate 22 can be reduced so that the temperature of the first pressure plate 21 reaches the target temperature to reduce energy consumption.

[0064] In some embodiments, the first heating plate 22 has a plurality of first heating areas, and the heating temperature of each first heating area is controlled separately. The first pressing plate 21 has a plurality of first mounting grooves corresponding to the first heating areas, and each first mounting groove has a first temperature sensor 24 disposed therein.

[0065] Specifically, each of the first heating regions is provided with a heating wire slot, in which a heating wire 8 is provided, and the heating wire 8 is connected to an external electrode through a lead wire. If any of the heating wires 8 is damaged, only the damaged part of the heating wire 8 needs to be replaced, and there is no need to replace the heating wire 8 in the entire first heating disk 22, thereby reducing maintenance costs. In addition, the first temperature sensor 24 can not only obtain the actual temperature in each of the first heating regions, but also determine whether the heating function of the first heating region is damaged based on the actual temperature obtained.

[0066] In this embodiment, a plurality of first heating areas are divided on the first heating disk 22, and each of the first heating areas is individually temperature controlled to improve the reliability of heating the first heating disk 22. Since the first temperature sensor 24 is provided in each of the first heating areas, it is convenient to accurately obtain the heating temperature of each first heating area to ensure the uniformity of the temperature on the first heating disk 22.

[0067] In some embodiments, the first pressure plate assembly 2 also includes a first insulation plate 25 connected to the telescopic portion 41, the first insulation plate 25 is coaxially arranged with the first heating plate 22, and the first insulation plate 25 and the first pressure plate 21 are respectively located on two sides of the first heating plate 22.

[0068] In this embodiment, by providing the first heat insulating plate 25 on the first pressure plate assembly 2, the first heating plate 22 is prevented from generating high heat during the heating process to damage other devices, thereby playing a role of isolating the temperature.

[0069] Furthermore, the first insulation disk 25 is provided with a plurality of first insulation areas corresponding to the first heating area, a first cooling channel 253 is opened in the first insulation area, and a first cooling inlet 251 and a first cooling outlet 252 are also opened on the first insulation area. The cooling medium is introduced into the first cooling channel 253 through the first cooling inlet 251 and then discharged through the first cooling outlet 252, and the cooling temperature of each first insulation area is controlled separately.

[0070] In this embodiment, the first heat-insulating plate 25 is provided with a plurality of first heat-insulating areas corresponding to the first heating area, and the plurality of first heat-insulating areas can not only play a role of heat insulation, but also play a role of temperature adjustment for the first heating area. For example, when the temperature of the first first heating area is slightly higher than the temperature of the other first heating areas, a cooling medium with a lower temperature can be provided in the first first heat-insulating area to reduce the temperature of the first first heating area, thereby ensuring the uniformity of the heating temperature on the first heating plate 22.

[0071] In some embodiments, the first pressure plate assembly 2 also includes a first sealing ring 26, which is arranged between the first pressure plate 21 and the first heating plate 22, and is used to ensure the sealing of the connection between the first pressure plate 21 and the first heating plate 22, thereby ensuring the sealing of the first pressure plate assembly 2 when used in a vacuum environment.

[0072] The first pressure plate 21 and the first heating plate 22 are connected via a connector 9 , and the connector 9 is provided with a disc spring assembly for pre-tightening and preventing loosening.

[0073] refer to Figure 2 , Figure 6 and Figure 7 As shown, in some embodiments, the second pressure plate assembly 3 includes a second pressure plate 31 and a second heating plate 32. The second heating plate 32 is coaxially arranged with the second pressure plate 31, the second pressure plate 31 is close to the first pressure plate 21, and the second heating plate 32 is used to heat the second pressure plate 31. The second pressure plate 31 is provided with a second adsorption hole 311, and the second adsorption hole 311 extends to the adsorption surface of the second pressure plate 31, and the adsorption surface of the second pressure plate 31 adsorbs the second wafer 6 through the second adsorption hole 311.

[0074] Specifically, the second adsorption hole 311 is provided at the central axis of the second pressure plate 31, and a plurality of second vacuum grooves 312 are provided on the adsorption surface of the second pressure plate 31. The plurality of second vacuum grooves 312 extend radially along the second pressure plate 31 at intervals and are all connected to the second adsorption hole 311 at one end. The second pressure plate assembly 3 also includes a second vacuum joint 33, and the second heating plate 32 is provided with a second mounting hole corresponding to the second adsorption hole 311. The second vacuum joint 33 is provided in the second mounting hole, and one end is connected to the second adsorption hole 311, and the other end is used to connect to an external vacuum generator. In addition, a second fluid channel may be provided inside the second pressure plate 31, and the second fluid channel is used to introduce a coolant to reduce the temperature of the second pressure plate 31. The coolant may be cooling water.

[0075] In this embodiment, the second vacuum connector 33 is connected to an external vacuum generator to provide an adsorption force for the adsorption surface of the second pressure plate 31 to adsorb the second wafer 6. After the second wafer 6 is adsorbed and fixed, the second heating plate 32 is used to heat the second pressure plate 31, and the second pressure plate 31 transfers heat to the second wafer 6, thereby heating the second wafer 6.

[0076] In some embodiments, the second pressure plate assembly 3 further includes a second temperature sensor 34 , and a second mounting groove is provided on the second pressure plate 31 . The second temperature sensor 34 is disposed in the second mounting groove and is used to detect the temperature on the second pressure plate 31 .

[0077] In this embodiment, by setting the second temperature sensor 34 on the second pressure plate 31, the actual temperature on the second pressure plate 31 can be detected in real time. The staff can determine whether the temperature during wafer bonding reaches the target temperature by receiving the actual temperature value detected by the second temperature sensor 34. When the actual temperature is lower than the target temperature, the heating temperature of the second heating plate 32 can be increased so that the temperature of the second pressure plate 31 reaches the target temperature to improve the strength of wafer bonding. Similarly, when the actual temperature is higher than the target temperature, the heating temperature of the second heating plate 32 can be reduced so that the temperature of the second pressure plate 31 reaches the target temperature to reduce energy consumption.

[0078] In some embodiments, the second heating plate 32 has a plurality of second heating areas, and the heating temperature of each second heating area is controlled separately. The second pressing plate 31 has a plurality of second mounting grooves corresponding to the second heating areas, and each second mounting groove has a second temperature sensor 34 disposed therein.

[0079] Specifically, each of the second heating regions is provided with a heating wire slot, in which a heating wire 8 is provided, and the heating wire 8 is connected to an external electrode through a lead wire. If any of the heating wires 8 is damaged, only the damaged portion of the heating wire 8 needs to be replaced, and there is no need to replace the heating wire 8 in the entire second heating disk 32, thereby reducing maintenance costs. In addition, the second temperature sensor 34 can not only obtain the actual temperature in each of the second heating regions, but also determine whether the heating function of the second heating region is damaged based on the actual temperature obtained.

[0080] In this embodiment, a number of second heating areas are divided on the second heating disk 32, and each of the second heating areas is individually temperature controlled to improve the reliability of heating the second heating disk 32. Since a second temperature sensor 34 is provided in each of the second heating areas, the heating temperature of each second heating area can be accurately obtained to ensure the uniformity of the temperature on the second heating disk 32.

[0081] In some embodiments, the second pressure plate assembly 3 also includes a second insulation plate 35 connected to the telescopic portion 41, the second insulation plate 35 is coaxially arranged with the second heating plate 32, and the second insulation plate 35 and the second pressure plate 31 are respectively located on two sides of the second heating plate 32.

[0082] In this embodiment, by providing a second heat insulating plate 35 on the second pressure plate assembly 3, the second heating plate 32 is prevented from generating high heat during the heating process to damage other devices, thereby playing a role of isolating the temperature.

[0083] Furthermore, the second insulation disk 35 is provided with a plurality of second insulation areas corresponding to the second heating area, a second cooling channel 353 is opened in the second insulation area, and a second cooling inlet 351 and a second cooling outlet 352 are also opened on the second insulation area. The cooling medium is introduced into the second cooling channel 353 through the second cooling inlet 351 and then discharged through the second cooling outlet 352, and the cooling temperature of each second insulation area is controlled separately.

[0084] In this embodiment, the second heat-insulating plate 35 is provided with a plurality of second heat-insulating areas corresponding to the second heating area, and the plurality of second heat-insulating areas can not only play a role of heat insulation, but also play a role of temperature adjustment for the second heating area. For example, when the temperature of the first of the second heating areas is slightly higher than the temperature of the other second heating areas, a cooling medium with a lower temperature can be provided in the first of the second heat-insulating areas to reduce the temperature of the first of the second heating areas, thereby ensuring the uniformity of the heating temperature on the second heating plate 32.

[0085] In some embodiments, the second pressure plate assembly 3 also includes a second sealing ring 36, which is arranged between the second pressure plate 31 and the second heating plate 32, and is used to ensure the sealing of the connection between the second pressure plate 31 and the second heating plate 32, thereby ensuring the sealing of the second pressure plate assembly 3 when used in a vacuum environment.

[0086] The second pressure plate 31 and the second heating plate 32 are connected via a connecting member 9 , and the connecting member 9 is provided with a disc spring assembly for pre-tightening and preventing loosening.

[0087] In some embodiments, reference Figure 2 , Figure 7 and Figure 8 As shown, the second pressure plate assembly 3 is provided with a retractable support pin 37 , which is used to support the second wafer 6 when extended, so that the second wafer 6 and the first wafer 5 are pre-bonded.

[0088] Specifically, a plurality of coaxially arranged through holes 313 are provided on the second heating plate 32 and the second pressure plate 31. The plurality of through holes 313 are annularly and spaced apart on the second heating plate 32 and the second pressure plate 31, and a supporting needle 37 is provided in each of the through holes 313. When the supporting needle 37 is extended from the through hole 313 by the power device, the second wafer 6 and the first wafer 5 can be driven to be pre-bonded.

[0089] A third sealing ring 38 is further provided at the connection between the through hole 313 of the second heating plate 32 and the through hole 313 of the second pressure plate 31 to ensure the sealing between the second heating plate 3 and the second pressure plate 31 .

[0090] refer to Figure 1 and Figure 3 As shown, in some embodiments, the bonding device further includes a pressure sensor 7 disposed on the first pressure plate assembly 2, the pressure sensor 7 is located between the telescopic portion 41 and the first pressure plate assembly 2, and is electrically connected to the telescopic mechanism 4, and the pressure sensor 7 is electrically connected to the telescopic mechanism 4. In the working state, the telescopic portion 41 drives the first pressure plate assembly 2 to move toward the second pressure plate assembly 3, so that the first wafer 5 and the second wafer 6 are in contact, and the pressure sensor 7 is used to detect the pressure when the first wafer 5 and the second wafer 6 are in contact.

[0091] In this embodiment, the pressure sensor 7 is electrically connected to the controller of the telescopic mechanism 4. The pressure sensor 7 feeds back the detected actual pressure value to the controller. If the actual pressure value is greater than the set pressure value, the controller controls the telescopic part to reduce the pressure. If the actual pressure value is less than the set pressure value, the controller controls the telescopic part to increase the pressure to ensure the bonding strength between the first wafer 5 and the second wafer 6.

[0092] The above is only a specific implementation of the embodiment of the present application, but the protection scope of the embodiment of the present application is not limited thereto, and any changes or replacements within the technical scope disclosed in the embodiment of the present application should be included in the protection scope of the embodiment of the present application. Therefore, the protection scope of the embodiment of the present application should be based on the protection scope of the claims.

Claims

1. A bonding device for wafer bonding, characterized in that: It comprises a cavity and a first pressure plate assembly, a second pressure plate assembly and a telescopic mechanism arranged in the cavity; The telescopic mechanism is arranged at the top of the cavity, and the telescopic mechanism has a telescopic portion, and the telescopic portion can be telescoped toward the bottom of the cavity; The first pressure plate assembly is disposed on the telescopic portion, and the first pressure plate assembly is used to absorb the first wafer and heat the first wafer; The second pressure plate assembly is located at the bottom of the cavity and is coaxially arranged with the first pressure plate assembly, and the second pressure plate assembly is used to carry the second wafer and heat the second wafer; In the working state, the telescopic portion drives the first pressure plate assembly to move toward the second pressure plate assembly until the first wafer contacts the second wafer.

2. The bonding device according to claim 1, characterized in that The first pressure plate assembly includes a first pressure plate and a first heating plate; The first heating plate is coaxially arranged with the first pressing plate, and the first heating plate is close to the telescopic portion, and the first heating plate is used to heat the first pressing plate; The first pressure plate is provided with a first adsorption hole, the first adsorption hole extends to the adsorption surface of the first pressure plate, and the adsorption surface of the first pressure plate adsorbs the first wafer through the first adsorption hole.

3. The bonding device according to claim 2, characterized in that: A first vacuum groove is provided on the adsorption surface of the first pressure plate, and a first fluid channel is provided inside the first pressure plate; The first vacuum groove extends in the radial direction of the first pressure plate and one end of the first vacuum groove is connected to the first adsorption hole; The first fluid channel is used to introduce cooling liquid to reduce the temperature of the first pressure plate.

4. The bonding device according to claim 3, characterized in that: The first platen assembly also includes a first vacuum connector; The first heating plate is provided with a first mounting hole corresponding to the first adsorption hole; The first vacuum joint is arranged in the first mounting hole, and one end of the first vacuum joint is communicated with the first adsorption hole, and the other end of the first vacuum joint is used to communicate with an external vacuum generator.

5. The bonding device according to claim 2, characterized in that: The first platen assembly also includes a first temperature sensor; The first pressure plate is provided with a first mounting groove; The first temperature sensor is disposed in the first mounting groove and is used to detect the temperature on the first pressure plate.

6. The bonding device according to claim 5, characterized in that: The first heating plate has a plurality of first heating areas, and the heating temperature of each first heating area is controlled separately; The first pressure plate is provided with a plurality of first installation grooves corresponding to the first heating area, and each of the first installation grooves is provided with the first temperature sensor.

7. The bonding device according to claim 6, characterized in that: The first pressure plate assembly further includes a first heat-insulating plate connected to the telescopic portion, the first heat-insulating plate is disposed on the first heating plate, and the first heat-insulating plate and the first pressure plate are respectively located on two side surfaces of the first heating plate.

8. The bonding device according to claim 7, characterized in that: The first insulation plate is provided with a plurality of first insulation areas corresponding to the first heating area. A first cooling channel is opened in the first insulation area. The first cooling channel is used for passing a cooling medium. The cooling temperature of each first insulation area is controlled separately.

9. The bonding device according to claim 2, characterized in that: The first pressure plate assembly also includes a first sealing ring, which is arranged between the first pressure plate and the first heating plate.

10. The bonding device according to any one of claims 1 to 9, characterized in that: The second pressure plate assembly includes a second pressure plate and a second heating plate; The second heating plate is stacked with the second pressing plate, and the second pressing plate is close to the first pressing plate, and the second heating plate is used to heat the second pressing plate; The second pressure plate is provided with a second adsorption hole, the second adsorption hole extends to the adsorption surface of the second pressure plate, and the adsorption surface of the second pressure plate adsorbs the second wafer through the second adsorption hole.

11. The bonding device according to claim 10, characterized in that: A second vacuum groove is provided on the adsorption surface of the second pressure plate, and a second fluid channel is provided inside the second pressure plate; The second vacuum groove extends in the radial direction of the second pressure plate and one end of the second vacuum groove is connected to the second adsorption hole; The second fluid channel is used to introduce cooling liquid to reduce the temperature of the second pressure plate.

12. The bonding device according to claim 11, characterized in that: The second platen assembly also includes a second vacuum connector; The second heating plate is provided with a second mounting hole corresponding to the second adsorption hole; The second vacuum connector is arranged in the second mounting hole, and one end of the second vacuum connector is communicated with the second adsorption hole, and the other end of the second vacuum connector is used to communicate with an external vacuum generator.

13. The bonding device according to claim 10, characterized in that: The second pressure plate assembly also includes a second temperature sensor; The second pressure plate is provided with a second mounting groove; The second temperature sensor is disposed in the second mounting groove and is used to detect the temperature on the second pressure plate.

14. The bonding device according to claim 13, characterized in that: The second heating plate has a plurality of second heating areas, and the heating temperature of each second heating area is controlled separately; The second pressure plate is provided with a plurality of second installation grooves corresponding to the second heating area, and each of the second installation grooves is provided with the second temperature sensor.

15. The bonding device according to claim 14, characterized in that The second pressure plate assembly also includes a second insulation plate connected to the bottom of the cavity, the second heating plate is arranged on the second insulation plate, and the second insulation plate and the second pressure plate are respectively located on two sides of the second heating plate.

16. The bonding device according to claim 15, characterized in that The second insulation plate is provided with a plurality of second insulation areas corresponding to the second heating area. A second cooling channel is opened in the second insulation area. The second cooling channel is used for passing cooling medium. The cooling temperature of each second insulation area is controlled separately.

17. The bonding device according to claim 1, characterized in that The second pressure plate assembly is provided with a retractable support needle; The supporting pins are used to support the second wafer when extended.

18. The bonding device according to claim 1, characterized in that It also includes a pressure sensor disposed on the first pressure plate assembly, the pressure sensor is located between the telescopic portion and the first pressure plate assembly, and is electrically connected to the telescopic mechanism; In a working state, the telescopic portion drives the first pressure plate assembly to move toward the second pressure plate assembly so that the first wafer is in contact with the second wafer, and the pressure sensor is used to detect the pressure when the first wafer is in contact with the second wafer.

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