Semiconductor substrate production heating system with gas blocking cover

What is AI technical title?
AI technical title is built by Patsnap AI team. It summarizes the technical point description of the patent document.
By designing a semiconductor substrate production heating system with air barrier, the problem of hot air flow damage to heat-resistant steel during the heating process cycle of high-temperature purification equipment is solved, effectively protecting the insulation system and extending the service life of the equipment.

CN222812186UActive Publication Date: 2025-04-29SHANXI ZHONGDIAN NEW ENERGY TECH CO LTD

View PDF 0 Cites 0 Cited by

Patent Information

Application Number: CN202421533384.9
Authority / Receiving Office: CN · China
Patent Type: Utility models(China)
Current Assignee / Owner
Filing Date: 2024-07-01
Publication Date: 2025-04-29
Estimated Expiration: 2034-07-01

AI Technical Summary

Technical Problem

During the heating process cycle of high-temperature purification equipment, the pumping air passes through the vacuum insulation gap, causing the hot air flow to damage the heat-resistant steel outside the insulation system, thereby affecting the performance of the insulation system.

Method used

A semiconductor substrate production heating system with an air shield is designed. By setting a small gap between the movable outer cylinder of the air shield and the fixed inner cylinder of the fixed air shield, and using the self-lubricating characteristics of graphite, the change in the air shield space is realized to protect the air shield. At the same time, the metal ring of the air shield is an internal thread, and the graphite thread of the fixed inner cylinder is an external thread to ensure that the graphite thread does not damage during thermal expansion.

Benefits of technology

It effectively prevents air insulation from damaging the performance of heat-resistant steel outside the insulation system and improves the service life of high-temperature purification equipment.

✦ Generated by Eureka AI based on patent content.

Smart Images

Figure CN222812186U_ABST

Patent Text Reader

Abstract

The utility model discloses a semiconductor base material production heating system with a gas blocking cover, and relates to semiconductor base material production equipment. Comprising a gas blocking cover movable outer cylinder, a gas blocking cover fixed inner cylinder and a gas blocking cover metal ring, one end of the gas blocking hood metal ring is connected with the inner wall of the top of a high-temperature purification equipment furnace body, the other end of the gas blocking hood metal ring is connected with the gas blocking hood fixed inner cylinder, one end of the gas blocking hood movable outer cylinder is in sliding connection with the gas blocking hood fixed inner cylinder, the other end of the gas blocking hood movable outer cylinder is placed on the upper surface of the heat preservation felt, and the temperature blocking ring is located in the gas blocking hood movable outer cylinder. According to the utility model, through the small clearance fit between the gas blocking hood movable outer cylinder and the gas blocking hood fixed inner cylinder and the self-lubricating property of graphite, the space change of the gas hood is realized, and the use of the gas blocking hood structure solves the problem that the performance of heat-resistant steel outside a heat preservation system is damaged by an air insulation mode, so that the service life of high-temperature purification equipment is prolonged.

Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The utility model relates to semiconductor substrate production equipment, in particular to a semiconductor substrate production heating system with an air shield. Background Art

[0002] The third generation of semiconductors, also known as wide bandgap semiconductors, are semiconductor materials represented by silicon carbide (SiC) and gallium nitride (GaN), which have the characteristics of high voltage, high temperature, high frequency and high power. At present, it has been widely used in wireless infrastructure (base stations), satellite communications, rail transportation, new energy vehicles, consumer electronics and other fields. Among them, high temperature purification equipment is an essential equipment for preparing the third generation semiconductor SiC substrate. The high-purity materials required for the production of SiC substrates are all produced by high temperature purification equipment. The working temperature of high temperature purification equipment reaches 2400℃. At this temperature, all the currently known insulation materials will fail, so the insulation form used by high temperature purification equipment is vacuum insulation. When designing vacuum insulation, there will be a gap between the insulation felt and the graphite electrode. When heated, the heat radiation will radiate to the outside of the insulation system through the gap, causing the temperature outside the insulation system to rise. The heat-resistant steel that fixes the graphite carbon felt outside the insulation system will reduce its strength due to high temperature. Therefore, when designing the heating system, it is necessary to design a temperature barrier ring to prevent heat radiation to the outside of the insulation system. However, after long-term use, the heat-resistant steel plate near the temperature barrier ring of the high temperature purification equipment also found that the heat-resistant steel strength was reduced, which in turn affected the performance of the insulation system. After investigating the cause, it was found that the temperature barrier ring designed in the early stage can effectively block the damage of thermal radiation to the heat-resistant steel outside the insulation system. However, during the process cycle vacuum pumping, due to the existence of the vacuum insulation gap, part of the airflow inside the insulation system was drawn away by the vacuum system through the vacuum insulation gap, causing part of the hot air flow to damage the heat-resistant steel.

[0003] See also Figure 1 , which is an existing heating system for producing semiconductor substrates, including a graphite electrode 2, an insulating gap 5 and a thermal barrier ring 4, wherein the top of the graphite electrode 2 has a threaded hole for connecting a copper electrode, the bottom of the graphite electrode 2 has a threaded hole for connecting a heater, and the middle area of the graphite electrode 2 has a convex step for installing the thermal barrier ring 4. A heat-resistant steel plate 3 is provided on the inner surface of the thermal insulation felt 1, and the graphite electrode 2 passes through the thermal insulation felt 1 and an insulating gap 5 is left between the graphite electrode 2 and the thermal insulation felt 1; the insulating gap 5 needs to ensure that there is a gap between the graphite electrode 2 and the thermal insulation felt 1 after high-temperature expansion to ensure that the insulation does not fail. The thermal barrier ring 4 can be placed on the convex step of the graphite electrode 2 through the top of the graphite electrode 2, and the bottom of the thermal barrier ring 4 needs to have a certain gap with the lower thermal insulation felt 1 to prevent conduction.

[0004] When the graphite electrode 2 is energized, the insulation system will not be charged due to the existence of the insulating gap 5, so the high-temperature purification equipment can be heated. In addition, a temperature barrier ring 4 is installed on the graphite electrode 2. The area of the temperature barrier ring 4 is larger than the area of the insulating gap 5. This prevents heat radiation from radiating the temperature inside the insulation system to the outside of the insulation system through the insulating gap 5 and damaging the heat-resistant steel plate 3. However, when the process cycle vacuum system is evacuated, a part of the hot air flow passes through the insulating gap 5 and damages the heat-resistant steel plate 3. Utility Model Content

[0005] The utility model overcomes the shortcomings of the prior art and proposes a semiconductor substrate production heating system with an air shield, which solves the problem that when the high-temperature purification equipment is heated in a process cycle, the air is drawn through the vacuum insulation gap, causing the hot air flow to damage the heat-resistant steel outside the insulation system.

[0006] In order to achieve the above purpose, the utility model is implemented through the following technical solutions.

[0007] A semiconductor substrate production heating system with an air shield, comprising an insulation felt, a graphite electrode and a temperature shield ring arranged in a high-temperature purification equipment furnace body; the graphite electrode penetrates the insulation felt and there is an insulating gap between the graphite electrode and the insulation felt; a heat-resistant steel plate is provided on the upper surface of the insulation felt, the temperature shield ring is connected to the graphite electrode, and a gap is left between the bottom of the temperature shield ring and the insulation felt; the temperature shield ring covers the insulating gap; it also includes an air shield movable outer cylinder, an air shield fixed inner cylinder and an air shield metal ring; one end of the air shield metal ring is connected to the inner wall of the top of the high-temperature purification equipment furnace body, and the other end of the air shield metal ring is connected to the fixed inner cylinder of the air shield, one end of the air shield movable outer cylinder is slidably connected to the fixed inner cylinder of the air shield, the other end of the air shield movable outer cylinder is placed on the upper surface of the insulation felt, and the temperature shield ring is located in the air shield movable outer cylinder.

[0008] Furthermore, it also includes an air shield gasket ring, which is placed on the upper surface of the thermal insulation felt, and the movable outer cylinder of the air shield is placed on the air shield gasket ring.

[0009] Furthermore, the air shield gasket is a graphite ring.

[0010] Furthermore, the movable outer cylinder of the air shield and the fixed inner cylinder of the air shield are both graphite cylinders; the movable outer cylinder of the air shield can slide up and down on the outer surface of the fixed inner cylinder of the air shield by the self-lubricating property of graphite.

[0011] Furthermore, the air shield hood fixing inner cylinder has an external thread on the top, and the air shield hood metal ring has an internal thread on the bottom. The air shield hood fixing inner cylinder and the air shield hood metal ring are connected by threads, and the material of the air shield hood metal ring is heat-resistant steel.

[0012] Furthermore, the diameter of the external thread on the air shield fixing inner cylinder is 0.5 mm smaller than the internal thread on the metal ring of the air shield.

[0013] Furthermore, the top of the graphite electrode has a threaded hole for connecting to the copper electrode, and the bottom of the graphite electrode has a threaded hole for connecting to the heater.

[0014] Furthermore, a convex step is provided in the middle area of the graphite electrode for installing a temperature barrier ring; the temperature barrier ring is placed on the convex step of the graphite electrode through the top of the graphite electrode.

[0015] The beneficial effects of the utility model compared with the prior art are:

[0016] 1. The utility model realizes the change of the air shield space through the small gap between the movable outer cylinder of the air shield and the fixed inner cylinder of the air shield, and through the self-lubricating property of graphite (the air shield will not be damaged when the heat preservation system is cooled or raised).

[0017] 2. The thermal expansion coefficient of heat-resistant steel is greater than that of graphite, so the metal ring of the air shield is an internal thread, and the graphite thread of the air shield fixing inner cylinder is an external thread to prevent damage to the graphite thread.

[0018] 3. The thread pitch of the inner cylinder of the air shield is the same as that of the metal ring of the air shield, but the nominal diameter of the thread of the inner cylinder of the air shield is less than the nominal diameter of the metal ring of the air shield, which further reduces the damage of the graphite thread.

[0019] 4. The use of the air shield described in the utility model solves the problem of air insulation damaging the performance of the heat-resistant steel outside the insulation system, thereby increasing the service life of the high-temperature purification equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 The figure is a cross-sectional view of a conventional heating system for producing semiconductor substrates.

[0021] Figure 2 The utility model is a cross-sectional view of a semiconductor substrate production heating system with an air shield.

[0022] In the figure:

[0023] 1 is a heat-insulating felt, 2 is a graphite electrode, 3 is a heat-resistant steel plate, 4 is a temperature-blocking ring, 5 is an insulating gap, 6 is a gas shield gasket ring, 7 is a movable outer cylinder of the gas shield, 8 is a fixed inner cylinder of the gas shield, 9 is a metal ring of the gas shield, and 10 is a furnace body of a high-temperature purification equipment. DETAILED DESCRIPTION

[0024] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail in combination with the embodiments and the accompanying drawings. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention. The technical solution of the present invention is described in detail below in combination with the embodiments and the accompanying drawings, but the scope of protection is not limited thereto.

[0025] See also Figure 2 , this embodiment proposes a semiconductor substrate production heating system with an air shield, including a graphite electrode 2, an insulating gap 5, a temperature shield ring 4, an air shield gasket 6, an air shield movable outer cylinder 7, an air shield fixed inner cylinder 8 and an air shield metal ring 9. The top of the graphite electrode 2 has a threaded hole for connecting the copper electrode, the bottom of the graphite electrode 2 has a threaded hole for connecting the heater, and the middle area of the graphite electrode 2 has a convex step for installing the temperature shield ring 4. The graphite electrode 2 passes through the thermal insulation felt 1 and there is an insulating gap 5 between the graphite electrode 2 and the thermal insulation felt 1; the insulating gap 5 needs to ensure that there is a gap between the graphite electrode 2 and the thermal insulation felt 1 after high-temperature expansion to ensure that the insulation does not fail. The temperature shield ring 4 can be placed on the convex step of the graphite electrode 2 through the top of the graphite electrode 2, and the bottom of the temperature shield ring 4 needs to have a certain gap with the lower thermal insulation felt 1 to prevent conduction.

[0026] The upper surface of the insulation felt 1 is provided with a heat-resistant steel plate 3, and the air shield gasket ring 6 is a graphite ring, which is placed on the upper surface of the insulation felt 1 and is used to carry the movable outer cylinder 7 of the air shield. The movable outer cylinder 7 of the air shield is placed on the air shield gasket ring 6, and the temperature ring 4 is located in the movable outer cylinder 7 of the air shield. The movable outer cylinder 7 of the air shield is a graphite cylinder. When the insulation felt 1 of the insulation system is raised or lowered, the movable outer cylinder 7 of the air shield can move up and down along the fixed inner cylinder 8 of the air shield, and always maintain the effective space of the entire air shield to protect the insulation space 5; the movable outer cylinder 7 of the air shield and the fixed inner cylinder 8 of the air shield are matched with a small gap, and the movable outer cylinder 7 of the air shield is slidably connected with the fixed inner cylinder 8 of the air shield, and can smoothly move up and down on the outer surface of the fixed inner cylinder 8 of the air shield through the self-lubricating property of graphite. The fixed inner cylinder 8 of the air shield is a graphite cylinder, and the top has an external thread connected to the internal thread of the metal ring 9 of the air shield. The material of the air shield metal ring 9 is heat-resistant steel, and the top is connected to the high-temperature purification equipment furnace body 10 by welding. Since the thermal expansion coefficient of heat-resistant steel is greater than that of graphite, the bottom thread of the air shield metal ring 9 is an internal thread, so that when the air shield metal ring 9 expands outward due to heat, it will not damage the graphite thread on the air shield fixed inner cylinder 8 connected to it. The two threads are designed to ensure that the pitch is consistent, but the diameter of the graphite thread on the air shield fixed inner cylinder 8 is 0.5mm smaller than the metal thread on the air shield metal ring 9, which can ensure that the two threads can be normally connected and have a certain gap to prevent the graphite thread from being damaged due to thermal expansion.

[0027] When the graphite electrode 2 is energized, the insulation system will not be charged due to the existence of the insulating gap 5, so the high-temperature purification equipment can be heated. In addition, a temperature barrier ring 4 is installed on the graphite electrode 2. The area of the temperature barrier ring 4 is larger than the area of the insulating gap 5, which prevents heat radiation from radiating the temperature inside the insulation system to the outside of the insulation system through the insulating gap 5 to damage the heat-resistant steel plate 3. Due to the heating system air shield, the top of the heating system is turned into an approximately closed space (only the small gap between the movable outer cylinder 7 of the air shield and the fixed inner cylinder 8 of the air shield can pass a small part of the air flow). When the process cycle is exhausted, only a small part of the air flow passes through the closed space, so that only a small part of the hot air flow can pass through the insulating gap 5, thereby protecting the heat-resistant steel plate 3 outside the insulation felt 1 and improving the service life of the high-temperature purification equipment.

[0028] The above content is a further detailed description of the utility model in combination with a specific preferred implementation method. It cannot be determined that the specific implementation methods of the utility model are limited to this. For ordinary technicians in the technical field to which the utility model belongs, they can make several simple deductions or substitutions without departing from the utility model, which should be regarded as belonging to the utility model and the scope of patent protection determined by the submitted claims.

Claims

1. A semiconductor substrate production heating system with an air shield, comprising an insulation felt (1), a graphite electrode (2) and a heat shield ring (4) arranged in a high-temperature purification equipment furnace body (10); the graphite electrode (2) penetrates the insulation felt (1) and an insulating gap (5) is present between the graphite electrode (2) and the insulation felt (1); a heat-resistant steel plate (3) is provided on the upper surface of the insulation felt (1); the heat shield ring (4) is connected to the graphite electrode (2), and a gap is left between the bottom of the heat shield ring (4) and the insulation felt (1); the heat shield ring (4) covers the insulating gap (5); the characteristic is that It also includes an air shield movable outer cylinder (7), an air shield fixed inner cylinder (8) and an air shield metal ring (9); one end of the air shield metal ring (9) is connected to the top inner wall of the high-temperature purification equipment furnace body (10), the other end of the air shield metal ring (9) is connected to the air shield fixed inner cylinder (8), one end of the air shield movable outer cylinder (7) is slidably connected to the air shield fixed inner cylinder (8), the other end of the air shield movable outer cylinder (7) is placed on the upper surface of the thermal insulation felt (1), and the thermal shield ring (4) is located in the air shield movable outer cylinder (7).

2. A semiconductor substrate production heating system with a gas shield according to claim 1, characterized in that: It also includes an air baffle gasket (6), which is placed on the upper surface of the thermal insulation felt (1), and an air baffle movable outer cylinder (7) is placed on the air baffle gasket (6).

3. A semiconductor substrate production heating system with a gas shield according to claim 1, characterized in that: The air shield gasket (6) is a graphite ring.

4. A semiconductor substrate production heating system with a gas shield according to claim 1, characterized in that: The air shield movable outer cylinder (7) and the air shield fixed inner cylinder (8) are both graphite cylinders; the air shield movable outer cylinder (7) slides up and down on the outer surface of the air shield fixed inner cylinder (8) by virtue of the self-lubricating property of graphite.

5. A semiconductor substrate production heating system with a gas shield according to claim 4, characterized in that: The air shield fixing inner cylinder (8) has an external thread at the top, and the air shield metal ring (9) has an internal thread at the bottom. The air shield fixing inner cylinder (8) and the air shield metal ring (9) are connected via threads, and the material of the air shield metal ring (9) is heat-resistant steel.

6. A semiconductor substrate production heating system with a gas shield according to claim 5, characterized in that: The diameter of the external thread on the air shield fixing inner cylinder (8) is 0.5 mm smaller than the internal thread on the air shield metal ring (9).

7. A semiconductor substrate production heating system with a gas shield according to claim 1, characterized in that: The top of the graphite electrode (2) has a threaded hole for connecting to the copper electrode, and the bottom of the graphite electrode (2) has a threaded hole for connecting to the heater.

8. The semiconductor substrate production heating system with a gas shield according to claim 1, characterized in that: The middle area of the graphite electrode (2) has a convex step for installing a temperature barrier ring (4); the temperature barrier ring (4) is placed on the convex step of the graphite electrode (2) through the top of the graphite electrode (2).