Ultrasonic detection device for wet etching equipment and wet etching equipment

Abstract

The utility model provides an ultrasonic detection device for wet etching equipment and the wet etching equipment, and the ultrasonic detection device comprises an ultrasonic detection part which is arranged in an etching groove and is used for transmitting ultrasonic waves to a wafer arranged on a lifter and receiving echoes reflected from the wafer; and the inclination judgment unit is connected with the ultrasonic detection part and is used for judging whether the wafer is inclined or not according to the actual time from ultrasonic wave emission to echo receiving of the ultrasonic detection part so as to judge whether the lifter is inclined or not. Whether the wafer is inclined or not is automatically detected through the ultrasonic detection piece and the inclination judgment unit, so that whether the lifter is inclined or not is judged, manual operation is not needed, and pollution to a clamping groove is avoided.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to an ultrasonic detection device for wet etching equipment and the wet etching equipment. Background Art

[0002] Existing wet etching equipment includes an etching tank and an elevator. The elevator includes a mechanical arm and a slot for placing wafers. The wafer can be taken out or put into the etching tank by lifting the mechanical arm. During the long-term use of the elevator, if the elevator is not adjusted in time, the elevator may tilt, which in turn causes the wafer to tilt. The tilted wafer surface is prone to defects, which in turn affects product quality.

[0003] At present, the commonly used method to detect whether the lifter is tilted is to place a horizontal plate on the slot of the robot arm and then use a level to measure the inclination of the horizontal plate. This manual measurement method is cumbersome, requires testing on the spot, and may contaminate the slot during the test.

[0004] In view of this, it is necessary to propose an ultrasonic detection device for wet etching equipment and a wet etching equipment to solve the above problems. Utility Model Content

[0005] The utility model aims to provide an ultrasonic detection device for wet etching equipment and wet etching equipment, so as to improve the problem that the existing detection method is complicated and may cause pollution.

[0006] The utility model provides an ultrasonic detection device for wet etching equipment, comprising:

[0007] An ultrasonic detection member is disposed in the etching groove and is used to transmit ultrasonic waves to the wafer placed on the lifter and receive echoes reflected from the wafer;

[0008] The tilt judging unit is connected to the ultrasonic detection component and is used to judge whether the wafer is tilted according to the actual time from the ultrasonic detection component emitting ultrasonic waves to receiving echoes, and further judge whether the lifter is tilted.

[0009] The beneficial effect of the ultrasonic detection device provided by the utility model is that: through the ultrasonic detection component and the tilt judgment unit, it is possible to automatically detect whether the wafer is tilted, thereby obtaining whether the lifter is tilted, without the need for manual operation, thus avoiding contamination of the card slot.

[0010] In a possible embodiment, the ultrasonic detection device further includes an angle calculation unit connected to the tilt judgment unit, which is used to calculate the tilt angle of the wafer according to the actual time and the standard time from the ultrasonic detection component transmitting the ultrasonic wave to receiving the echo when the judgment result is that the lifter is tilted. The beneficial effect is that the wafer tilt angle obtained by the angle calculation unit can guide engineers to more easily adjust the lifter to a horizontal state.

[0011] In a possible embodiment, the ultrasonic detection device further includes a temperature detection unit connected to the ultrasonic detection element, for obtaining the temperature of the wafer surface according to the actual voltage of the echo. The beneficial effect is that the temperature of the wafer surface can be detected by the ultrasonic detection element and the temperature detection unit.

[0012] In a possible embodiment, the ultrasonic detection element includes a plurality of ultrasonic probes distributed at intervals, and the plurality of ultrasonic probes are respectively connected to the temperature detection unit, and ultrasonic waves are emitted to different regions of the wafer through the plurality of ultrasonic probes to achieve temperature detection of different regions of the wafer. The beneficial effect is that the temperature of different regions on the surface of the wafer can be detected by the plurality of ultrasonic probes and the temperature detection unit.

[0013] In a possible embodiment, the arrangement range of several ultrasonic probes is adapted to the surface range of the wafer; several ultrasonic probes are arranged in a linear array of multiple rows or columns; or, one of several ultrasonic probes is located at the center, and the rest of the ultrasonic probes are arranged in a circular array with the center as the center; or, one of several ultrasonic probes is located at the center, and the rest of the ultrasonic probes are arranged in a square array with the center as the center. The beneficial effect is that by reasonably setting the arrangement position of the ultrasonic probes to cover the surface of the wafer, more comprehensive temperature distribution information on the wafer surface can be obtained.

[0014] In a possible embodiment, the ultrasonic detection device further includes a lateral adjustment mechanism disposed in the etching groove and arranged in a transverse direction, the ultrasonic detection component is disposed on the lateral adjustment mechanism, and the lateral adjustment mechanism is used to adjust the lateral position of the ultrasonic detection component; or, the ultrasonic detection device further includes a vertical adjustment mechanism disposed in the etching groove and arranged in a vertical direction, the ultrasonic detection component is disposed on the vertical adjustment mechanism, and the vertical adjustment mechanism is used to adjust the vertical position of the ultrasonic detection component; or, the ultrasonic detection component is disposed in the etching groove through a lateral adjustment mechanism and a vertical adjustment mechanism, the lateral adjustment mechanism is arranged in a transverse direction, and the vertical adjustment mechanism is arranged in a vertical direction, and the lateral and vertical position adjustments of the ultrasonic detection component can be realized through the lateral adjustment mechanism and the vertical adjustment mechanism. Its beneficial effect is that by moving and adjusting the position of the ultrasonic detection component, the first probe can correspond to different areas on the surface of the wafer for temperature detection.

[0015] In a possible embodiment, in the case of setting the lateral adjustment mechanism, the lateral adjustment mechanism is a linear module, a cylinder, a hydraulic cylinder or an electric telescopic rod; in the case of setting the vertical adjustment mechanism, the vertical adjustment mechanism is a linear module, a cylinder, a hydraulic cylinder or an electric telescopic rod.

[0016] In a possible embodiment, the ultrasonic detection device further includes an alarm connected to the tilt determination unit, and when the determination result is that the lifter is tilted, the alarm sounds an alarm.

[0017] In a possible embodiment, the shell of the ultrasonic detection component is made of acid-resistant and high-temperature-resistant material.

[0018] The utility model also provides a wet etching device, comprising: an etching groove, a lifter and an ultrasonic detection device for the wet etching device as in any of the above implementations. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a schematic diagram of the installation of the ultrasonic detection device for wet etching equipment of the utility model.

[0020] Figure 2 It is a schematic diagram of the ultrasonic detection device for wet etching equipment of the utility model.

[0021] Figure 3 It is a schematic diagram of the ultrasonic detection device for wet etching equipment of the utility model emitting ultrasonic waves to point A of the wafer.

[0022] Figure 4 It is a schematic diagram of the ultrasonic detection device for wet etching equipment of the utility model measuring the standard distance d1 by emitting ultrasonic waves to point A on a non-tilted wafer.

[0023] Figure 5 It is a schematic diagram of the ultrasonic detection device for wet etching equipment of the utility model emitting ultrasonic waves to point A of the wafer to measure the actual distance d during the detection process.

[0024] Figure 6 The utility model is a schematic diagram of detecting the tilt angle of a wafer in an ultrasonic detection device for wet etching equipment.

[0025] Figure 7 It is a schematic diagram of the ultrasonic detection component in the ultrasonic detection device for wet etching equipment of the utility model emitting ultrasonic waves to a wafer and the degree of echo attenuation.

[0026] Figure 8 It is a schematic diagram of the ultrasonic probes in the ultrasonic detection device for wet etching equipment of the utility model arranged in a linear array of multiple rows.

[0027] Fig. 9 It is a schematic diagram of the ultrasonic probes arranged in a circular array in the ultrasonic detection device for wet etching equipment of the utility model.

[0028] Fig.10 It is a schematic diagram of the ultrasonic probes arranged in a square array in the ultrasonic detection device for wet etching equipment of the utility model.

[0029] Fig.11 It is a schematic diagram of the lateral adjustment mechanism and the vertical adjustment mechanism in the ultrasonic detection device for wet etching equipment of the utility model.

[0030] Explanation of reference numerals: ultrasonic detection device 100; ultrasonic detection member 110; ultrasonic probe 111; tilt determination unit 120; angle calculation unit 130; temperature detection unit 140; lateral adjustment mechanism 150; vertical adjustment mechanism 160; alarm 170; wafer 200; etching groove 300. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the embodiments of the utility model clearer, the technical solution in the embodiments of the utility model will be described clearly and completely below. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0032] In view of the problems existing in the prior art, the embodiment of the utility model provides an ultrasonic detection device for wet etching equipment, see Figure 1 and Figure 2The ultrasonic detection device 100 includes: an ultrasonic detection member 110 and a tilt judgment unit 120. The ultrasonic detection member 110 is disposed in the etching groove 300 and is used to transmit ultrasonic waves to the wafer 200 placed on the lifter (not shown in the figure), and receive the echo reflected from the wafer 200. The tilt judgment unit 120 is connected to the ultrasonic detection member 110 and is used to judge whether the wafer 200 is tilted according to the actual time from the ultrasonic detection member 110 transmitting the ultrasonic wave to receiving the echo, and then judge whether the lifter is tilted.

[0033] In this embodiment, the ultrasonic detection element 110 transmits ultrasonic waves to the wafer 200 and receives the reflected echo. The tilt judgment unit 120 calculates the actual distance between the ultrasonic detection element 110 and the wafer 200 according to the actual time from the ultrasonic detection element 110 transmitting the ultrasonic wave to the actual time from the ultrasonic detection element 110 receiving the echo. If the actual distance is not equal to the standard distance between the ultrasonic detection element 110 and the wafer 200 or the deviation between the two exceeds the preset range, it is judged that the wafer 200 is tilted. If the actual distance is equal to the standard distance or the deviation between the two is less than the preset range (i.e., the deviation is very small), it is judged that the wafer 200 is not tilted. The cumbersome steps of manual operation are reduced through automated detection and judgment, and the detection efficiency is improved. Moreover, contactless detection can be achieved by using ultrasonic waves, avoiding direct contact with the wafer 200 and the card slot to cause contamination of the wafer 200 and the card slot.

[0034] In a preferred embodiment, see Figure 1 and Figure 2 The ultrasonic detection device 100 further includes an angle calculation unit 130 connected to the tilt judgment unit 120, which is used to calculate the tilt angle of the wafer 200 according to the actual time and the standard time from the ultrasonic detection element 110 transmitting the ultrasonic wave to receiving the echo when the judgment result is that the lifter is tilted. The tilt angle of the wafer 200 is automatically calculated according to the actual time and the standard time, and the engineer can adjust the lifter to a horizontal state more quickly by adjusting the lifter to a horizontal state according to the tilt angle of the wafer 200.

[0035] The calculation principle of the tilt angle is explained below with reference to the accompanying drawings. Figure 3 As shown, the ultrasonic testing element 110 emits ultrasonic waves toward point A on the wafer 200, and the distance between point A and the center 0 of the wafer 200 is h. Figure 4 As shown, when the wafer 200 is not tilted, the ultrasonic testing component 110 transmits ultrasonic waves toward point A on the wafer 200 and receives the echo reflected from point A on the wafer 200. The standard time t1 from transmitting the ultrasonic waves to receiving the echo is measured, and the standard distance d1=v*t1 between the ultrasonic testing component 110 and point A is calculated, where v is the speed of sound. Figure 5As shown, in actual testing, the ultrasonic testing component 110 transmits ultrasonic waves toward point A on the wafer 200 and receives the echo reflected from point A on the wafer 200. The actual time t from transmitting the ultrasonic wave to receiving the echo is measured, and the actual distance d=v*t between the ultrasonic testing component 110 and point A is calculated. Determine whether d and d1 are equal. If d≠d1, it means that the wafer 200 is tilted. Figure 6 As shown, the tilt angle β=arctan(|d-d1| / h) of the wafer 200 is calculated, and then the tilt angle of the elevator is determined.

[0036] As is known to all, the etching rate of chemicals on thin films is affected by temperature and concentration. Therefore, it is very important to detect the temperature of chemicals on the wafer 200 during the process. The temperature difference will cause the difference in etching rate within and between wafers, thereby affecting the performance of the product. For example, the temperature setting of phosphoric acid in the phosphoric acid tank is 160°C. Because of the difference inside the wafer 200 and the fluctuation of the temperature of phosphoric acid itself, the temperature on the surface of the wafer 200 may be affected, thereby affecting the etching rate of the wafer 200. At present, one temperature detection method is to detect the temperature of the chemical through a thermometer on the chemical delivery pipeline, but there is a certain distance between the detection point at the thermometer and the surface of the wafer 200, and the temperature of the wafer 200 is not directly measured. The measured temperature is different from the actual temperature of the wafer 200 surface; another temperature detection method is to monitor directly on the wafer 200. A temperature sensor is provided inside the wafer 200 to measure the real-time temperature of the surface of the wafer 200, but this method requires a computer and a special wafer box, has a short service life, and is expensive.

[0037] For this technical problem, see Figure 2 and Figure 7 In this embodiment, a temperature measurement design for the surface of the wafer 200 is designed. The ultrasonic detection device 100 also includes a temperature detection unit 140 connected to the ultrasonic detection element 110, which is used to obtain the temperature of the surface of the wafer 200 according to the actual voltage of the echo. In this embodiment, compared with the existing thermometer measurement or the built-in sensor of the wafer 200, this solution adopts ultrasonic detection technology to achieve non-contact temperature measurement of the surface of the wafer 200, avoiding the temperature error caused by the distance between the thermometer position and the surface of the wafer 200, and also overcoming the additional cost and complexity that may be introduced by the built-in sensor.

[0038] The propagation speed and attenuation of ultrasound in a medium are closely related to the temperature of the medium. Generally speaking, when the temperature is low, the medium absorbs and scatters less ultrasound, the ultrasound energy attenuates less, and the echo signal is stronger; when the temperature is high, the thermal motion of the medium molecules intensifies, the absorption and scattering of ultrasound are enhanced, resulting in increased ultrasound energy attenuation and weakened echo signals. Figure 7, the ultrasonic probe 111 transmits ultrasonic waves to the surface of the wafer 200, and the ultrasonic waves are reflected on the surface of the wafer 200 to generate echoes. The voltage V of the echo is inversely proportional to the attenuation degree of the ultrasonic wave during the propagation process, that is, the smaller the attenuation, the higher the echo voltage. Figure 7 The waveform corresponding to a in the figure is shown below; the greater the attenuation, the lower the echo voltage, as shown in Figure 7 Based on the correspondence between the ultrasonic echo voltage V and the temperature, a simulation experiment can be performed in advance, and a correspondence table between the temperature and the ultrasonic echo voltage can be established by calibrating the ultrasonic echo voltage V at different temperatures. The temperature detection unit 140 searches the correspondence table according to the actual voltage of the echo to obtain the surface temperature of the wafer 200.

[0039] It should be noted that the tilt determination unit 120 , the angle calculation unit 130 , and the temperature detection unit 140 in the present invention are all hardware devices and are integrated on the controller.

[0040] In one embodiment, see Figure 8 , Fig. 9 as well as Fig.10 The ultrasonic detection part 110 includes a plurality of ultrasonic probes 111 distributed at intervals, and the plurality of ultrasonic probes 111 are respectively connected to the temperature detection unit 140. Ultrasonic waves are emitted to different areas of the wafer 200 through the plurality of ultrasonic probes 111 to realize temperature detection of different areas of the wafer 200. In this embodiment, through the ultrasonic probes 111 distributed at intervals, this multi-point detection method can better reflect the actual temperature distribution of the surface of the wafer 200 than single-point detection. Even if one or several ultrasonic probes 111 fail or measure inaccurately, other probes can still work normally and provide valid data. This multi-point detection design enhances the robustness and reliability of the entire temperature detection.

[0041] In some specific embodiments, see Figure 8 The arrangement range of the plurality of ultrasonic probes 111 is adapted to the surface range of the wafer 200; the plurality of ultrasonic probes 111 are arranged in a linear array in multiple rows or columns. Alternatively, see Fig. 9 Among the plurality of ultrasonic probes 111, one ultrasonic probe 111 is located at the center, and the remaining ultrasonic probes 111 are arranged in a circular array with the center as the center. The circular array is a multi-layer interval arrangement with nested layers, such as Fig. 9 As shown, it is a three-layer design and from the inside to the outside are: inner layer, middle layer, outer layer; or, see Fig.10, one ultrasonic probe 111 among the plurality of ultrasonic probes 111 is located at the center position, and the remaining ultrasonic probes 111 are arranged in a square array with the center position as the center, and the square array is a multi-layer interval arrangement of nested layers. In this embodiment, by reasonably setting the arrangement of the ultrasonic probes 111, it is ensured that all areas on the surface of the wafer 200 are covered by the ultrasonic probes 111, which greatly reduces the detection blind area, thereby obtaining more comprehensive temperature distribution information on the surface of the wafer 200, and improving the integrity and comprehensiveness of temperature data collection.

[0042] In a preferred embodiment, see Figure 1 and Fig.11 The ultrasonic detection device 100 further includes a transverse adjustment mechanism 150 disposed in the etching groove 300 and arranged in a transverse direction, the ultrasonic detection member 110 is disposed on the transverse adjustment mechanism 150, and the transverse adjustment mechanism 150 is used to adjust the transverse position of the ultrasonic detection member 110. Alternatively, the ultrasonic detection device 100 further includes a vertical adjustment mechanism 160 disposed in the etching groove 300 and arranged in a vertical direction, the ultrasonic detection member 110 is disposed on the vertical adjustment mechanism 160, and the vertical adjustment mechanism 160 is used to adjust the vertical position of the ultrasonic detection member 110. Alternatively, the ultrasonic detection member 110 is disposed in the etching groove 300 through the transverse adjustment mechanism 150 and the vertical adjustment mechanism 160, the transverse adjustment mechanism 150 is arranged in a transverse direction, and the vertical adjustment mechanism 160 is arranged in a vertical direction, and the transverse and vertical position adjustment of the ultrasonic detection member 110 can be realized through the transverse adjustment mechanism 150 and the vertical adjustment mechanism 160. In this embodiment, when the ultrasonic detection component 110 is only provided with one ultrasonic probe 111, the position of the ultrasonic detection component 110 can also be moved and adjusted by moving and adjusting the lateral adjustment mechanism 150 and / or the vertical adjustment mechanism 160, so that the ultrasonic probe 111 of the ultrasonic detection component 110 can emit ultrasonic waves to different areas of the surface of the wafer 200. The temperature of different areas on the surface of the wafer 200 can be detected by only one ultrasonic probe 111. At the same time, the tilt angle of the wafer 200 can be detected at multiple positions on the surface of the wafer 200, thereby improving the detection accuracy of the tilt angle.

[0043] In one possible embodiment, see Fig.11 In the case where the lateral adjustment mechanism 150 is provided, the lateral adjustment mechanism 150 is a linear module, a cylinder, a hydraulic cylinder or an electric telescopic rod; in the case where the vertical adjustment mechanism 160 is provided, the vertical adjustment mechanism 160 is a linear module, a cylinder, a hydraulic cylinder or an electric telescopic rod. Fig.11As shown, the vertical adjustment mechanism 160 adopts a cylinder, the lateral adjustment mechanism 150 adopts a linear module and is arranged at the top of the cylinder, and the ultrasonic detection component 110 is arranged on the slide of the linear module. The vertical movement adjustment of the linear module and the ultrasonic detection component 110 thereon is achieved by adjusting the telescopic adjustment of the cylinder, and the lateral movement of the slide on the linear module is driven to achieve the lateral movement of the ultrasonic detection component 110. The specific components and assembly position relationship of the lateral adjustment mechanism 150 and the vertical adjustment mechanism 160 can be flexibly designed according to actual production needs and are not limited here.

[0044] In a possible embodiment, the ultrasonic detection device 100 further includes an alarm 170 connected to the tilt judgment unit 120. When the judgment result is that the lifter is tilted, the alarm 170 sounds an alarm. The alarm 170 is also connected to the temperature detection unit 140. When the actual measured surface temperature of the wafer 200 is greater than a preset temperature range, the alarm 170 sounds an alarm. When the alarm detects that the lifter is tilted or the surface temperature of the wafer 200 exceeds the standard, the alarm 170 will immediately sound an alarm to remind engineers to take timely measures.

[0045] In a possible embodiment, the shell of the ultrasonic detection element 110 is made of acid-resistant and high-temperature-resistant materials, such as polytetrafluoroethylene, ceramics, glass, etc.

[0046] The technical effects of the ultrasonic detection device for wet etching equipment of the utility model are explained in detail below.

[0047] 1. Use ultrasonic waves to automatically detect whether the wafer 200 is tilted, and then determine whether the lifter is tilted. No manual operation is required, which improves the detection efficiency and avoids contamination of the wafer 200 and the card slot. By calculating the tilt angle of the wafer 200, engineers can be guided to quickly adjust the level of the lifter.

[0048] 2. The surface temperature of the wafer 200 can be directly detected by the temperature detection unit 140, thereby improving detection accuracy and detection cost. In addition, the arrangement design of a plurality of ultrasonic probes 111 can realize comprehensive temperature detection of different areas on the surface of the wafer 200.

[0049] 3. By moving and adjusting the lateral adjustment mechanism 150 and / or the vertical adjustment mechanism 160 and using multiple detections with an ultrasonic probe 111, it is also possible to detect the temperature of different areas on the surface of the wafer 200 and detect the tilt angles of multiple positions, thereby improving the detection accuracy of the angles.

[0050] The utility model further provides a wet etching device, comprising: an etching groove 300, a lifter, and an ultrasonic detection device 100 for the wet etching device as in any of the above embodiments.

[0051] Although the embodiments of the utility model are described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are within the scope and spirit of the utility model described in the claims. Moreover, the utility model described herein may have other embodiments and may be implemented or realized in a variety of ways. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with ordinary skills in the field to which the utility model belongs. The words "including" and the like used herein mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

Claims

1. An ultrasonic detection device for wet etching equipment, characterized in that: include: An ultrasonic detection member is disposed in the etching groove and is used to transmit ultrasonic waves to the wafer placed on the lifter and receive echoes reflected from the wafer; The tilt judging unit is connected to the ultrasonic detection component and is used to judge whether the wafer is tilted according to the actual time from the ultrasonic detection component emitting ultrasonic waves to receiving echoes, and further judge whether the lifter is tilted.

2. The ultrasonic detection device for wet etching equipment according to claim 1, characterized in that: It also includes an angle calculation unit connected to the tilt judgment unit, which is used to calculate the tilt angle of the wafer according to the actual time and the standard time from the ultrasonic detection component emitting the ultrasonic wave to receiving the echo when the judgment result is that the lifter is tilted.

3. The ultrasonic detection device for wet etching equipment according to claim 1, characterized in that: It also includes a temperature detection unit connected to the ultrasonic detection element, which is used to obtain the temperature of the wafer surface according to the actual voltage of the echo.

4. The ultrasonic detection device for wet etching equipment according to claim 3, characterized in that: The ultrasonic detection component includes a plurality of ultrasonic probes distributed at intervals, and the plurality of ultrasonic probes are respectively connected to the temperature detection unit. Ultrasonic waves are emitted to different regions of the wafer through the plurality of ultrasonic probes to realize temperature detection of different regions of the wafer.

5. The ultrasonic detection device for wet etching equipment according to claim 4, characterized in that: The arrangement range of the plurality of ultrasonic probes is adapted to the surface range of the wafer; A plurality of said ultrasonic probes are arranged in a linear array in multiple rows or columns; or, One of the plurality of ultrasonic probes is located at a central position, and the remaining ultrasonic probes are arranged in a circular array with the central position as the center; or, One of the plurality of ultrasonic probes is located at a central position, and the remaining ultrasonic probes are arranged in a square array with the central position as the center.

6. The ultrasonic detection device for wet etching equipment according to any one of claims 1 to 5, characterized in that: It also includes a transverse adjustment mechanism disposed in the etching groove and arranged transversely, the ultrasonic detection element is disposed on the transverse adjustment mechanism, and the transverse adjustment mechanism is used to adjust the transverse position of the ultrasonic detection element; or It also includes a vertical adjustment mechanism disposed in the etching groove and arranged vertically, the ultrasonic detection element is disposed on the vertical adjustment mechanism, and the vertical adjustment mechanism is used to adjust the vertical position of the ultrasonic detection element; or, The ultrasonic detection component is arranged in the etching groove through a lateral adjustment mechanism and a vertical adjustment mechanism. The lateral adjustment mechanism is arranged horizontally, and the vertical adjustment mechanism is arranged vertically. Through the lateral adjustment mechanism and the vertical adjustment mechanism, the lateral and vertical position adjustment of the ultrasonic detection component can be achieved.

7. The ultrasonic detection device for wet etching equipment according to claim 6, characterized in that: In the case where the lateral adjustment mechanism is provided, the lateral adjustment mechanism is a linear module, a cylinder, a hydraulic cylinder or an electric telescopic rod; In the case where the vertical adjustment mechanism is provided, the vertical adjustment mechanism is a linear module, a cylinder, a hydraulic cylinder or an electric telescopic rod.

8. The ultrasonic detection device for wet etching equipment according to any one of claims 1 to 5, characterized in that: It also includes an alarm connected to the tilt judging unit, and when the judging result is that the lifter is tilted, the alarm sounds an alarm.

9. The ultrasonic detection device for wet etching equipment according to any one of claims 1 to 5, characterized in that: The shell of the ultrasonic detection element is made of acid-resistant and high-temperature-resistant material.

10. A wet etching device, characterized in that: include: An etching groove, a lifter, and an ultrasonic detection device for wet etching equipment as claimed in any one of claims 1 to 9.

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