Diamond atomization hole silicon heating structure atomization core

Abstract

The utility model discloses an atomizing core with a diamond atomizing hole silicon heating structure, which comprises a second substrate sheet provided with a first hole channel; the first substrate slice is fixedly installed on the second substrate slice, the first substrate slice is a low-resistance silicon slice, the first substrate slice is provided with an atomization area corresponding to the first hole channel in position, the atomization area is provided with rhombic atomization holes arranged in an array mode, and a heating node is formed between every two adjacent rhombic atomization holes; and the conductive electrodes are fixedly installed on the surface of the first substrate slice, and the conductive electrodes are symmetrically arranged on the two sides of the atomization area. Compared with the prior art, the problems that an existing silicon-based atomizing core is fragile in assembly and low in heat efficiency are solved.

Description

Technical Field

[0001] The utility model relates to the technical field of liquid heating atomizing cores, in particular to an atomizing core with a diamond-shaped atomizing hole silicon heating structure. Background Art

[0002] As the core component of liquid atomization products, the heating atomizer core heats the liquid and turns it into a mist aerosol form. When the atomizer element of the atomizer core heats the atomized liquid, it needs to be fast, uniform, and consistent to reduce the generation of harmful substances.

[0003] There are three main types of existing heating atomizer cores:

[0004] The first type is a ceramic atomizer core, which consists of two parts: porous ceramic and heating electrode. The ceramic is sintered at high temperature to form a bowl-shaped structure. The heating film is designed into a specific shape and attached to the ceramic surface. During operation, the heating film heats the liquid evenly to form mist, which is emitted by the ceramic honeycomb holes.

[0005] The second type of cotton core atomizer core has a heating wire spirally wound around organic cotton. When working, the heating wire heats the liquid absorbed by the cotton to atomize;

[0006] The third type is a silicon-based atomization core, which uses micro-nano processing technology to make a resistive heating structure and electrodes of a specific shape on a silicon substrate, and etches perforations in the silicon substrate as channels for liquid atomization.

[0007] When the existing ceramic atomizer core is used for liquid atomization heating, it is impossible to produce a structure with consistent pore size due to the use of porous ceramic sintering technology. The thermal conductivity is poor, the heating is uneven, and it is easy to overheat and dry carbonize locally. In addition, the pore size is too small and cannot be flexibly adjusted, which affects the atomization effect.

[0008] When the existing cotton core atomizer core is used for liquid atomization and heating, there are still phenomena of uneven heating and local overheating, which can easily cause local carbonization of the cotton core material and cause harmful substances to precipitate and enter the human body.

[0009] When the existing silicon-based atomizer core is used for liquid atomization heating, although the atomization effect can be adjusted by adjusting the shape and size of the atomization aperture, the silicon-based atomizer core has a hard and brittle structure and low bending strength, and is easily broken during installation. In addition, due to the good thermal conductivity of silicon material and the uniform temperature of the heating core, the heat is easily conducted to the electrode column and cannot be effectively concentrated in the atomization area, so the thermal efficiency is low. Utility Model Content

[0010] The utility model aims to provide an atomizer core with a diamond-shaped atomizer hole silicon heating structure, so as to solve the problems of easy assembly and low thermal efficiency of the existing silicon-based atomizer core.

[0011] In order to achieve the above-mentioned purpose, the utility model discloses an atomizing core with a diamond-shaped atomizing hole silicon heating structure, comprising:

[0012] A second substrate sheet having a first hole disposed thereon;

[0013] A first substrate sheet is fixedly mounted on the second substrate sheet, the first substrate sheet is a low-resistance silicon sheet, an atomization area corresponding to the first channel is provided on the first substrate sheet, the atomization area is provided with array-arranged rhombus-shaped atomization holes, and a heating node is formed between two adjacent rhombus-shaped atomization holes;

[0014] The conductive electrode is fixedly mounted on the surface of the first substrate sheet, and symmetrically arranged conductive electrodes are arranged on both sides of the atomization area.

[0015] As a further description of the above technical solution:

[0016] The second substrate is a glass plate, a quartz plate or a ceramic plate.

[0017] As a further description of the above technical solution:

[0018] The thickness of the first substrate sheet is 10-500 microns.

[0019] The manufacturing method of the atomizing core with a diamond-shaped atomizing hole silicon heating structure comprises the following steps:

[0020] S1, preparing a second substrate sheet, wherein the thickness of the second substrate sheet is 100 μm to 9000 μm;

[0021] S2, processing a first channel on the second substrate sheet;

[0022] S3, preparing a first substrate sheet, and fixing the first substrate sheet on the second substrate sheet;

[0023] S4, thinning the thickness of the second substrate sheet, wherein the thickness of the second substrate sheet after thinning is 10-600 microns;

[0024] S5, preparing an atomization network structure on the surface of the first substrate by a photolithography and etching process to form an array of rhombus-shaped atomization holes;

[0025] S6. Depositing a conductive electrode on the surface of the first substrate sheet.

[0026] In summary, due to the adoption of the above technical solution, the beneficial effects of the utility model are:

[0027] 1. In the present invention, a glass sheet or a ceramic sheet of a certain thickness is used as a substrate for support below the silicon-based heating structure to form a double-substrate atomizer core, thereby enhancing the strength of the atomizer core and reducing the risk of assembly damage.

[0028] 2. In the present invention, the silicon-based material in the silicon-based atomization core solution has good thermal conductivity and is not prone to local overheating, dry burning and carbonization. The material is safe and non-toxic, and the heating atomization area does not contain metal materials, which is friendly to the human body. At the same time, the diamond shape of the atomization hole on the silicon-based heating structure makes the heating nodes relatively concentrated, improving thermal efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the utility model and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying creative work.

[0030] Figure 1 This is a schematic diagram of the structure of an atomizer core with a diamond-shaped atomization hole silicon heating structure.

[0031] Figure 2 The figure is a processing schematic diagram of step S1 in a method for manufacturing an atomization core with a diamond-shaped atomization hole silicon heating structure.

[0032] Figure 3 The figure is a processing schematic diagram of step S2 in a method for manufacturing an atomization core with a diamond-shaped atomization hole silicon heating structure.

[0033] Figure 4 The figure is a processing schematic diagram of step S3 in a method for manufacturing an atomization core with a diamond-shaped atomization hole silicon heating structure.

[0034] Figure 5 The figure is a processing schematic diagram of step S4 in a method for manufacturing an atomization core with a diamond-shaped atomization hole silicon heating structure.

[0035] Figure 6 It is a processing schematic diagram of step S5 in a method for manufacturing an atomization core with a diamond-shaped atomization hole silicon heating structure.

[0036] Figure 7 The figure is a processing schematic diagram of step S6 in a method for manufacturing an atomization core with a diamond-shaped atomization hole silicon heating structure.

[0037] Legend:

[0038] 1. First substrate sheet; 11. Diamond-shaped atomization hole; 12. Heat generation node; 2. Second substrate sheet; 21. First channel; 3. Conductive electrode. DETAILED DESCRIPTION

[0039] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Generally, the components of the embodiments of the utility model described and shown in the drawings here can be arranged and designed in various different configurations.

[0040] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the present invention to be protected, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0041] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0042] In the description of the embodiments of the present utility model, it should be noted that the terms "upper", "inner", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, or are directions or positional relationships in which the utility model product is usually placed when in use. They are only for the convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present utility model.

[0043] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0044] Example 1

[0045] See also Figure 1 On the one hand, the utility model discloses a diamond-shaped atomizing hole silicon heating structure atomizing core, comprising:

[0046] A second substrate sheet 2 having a first hole 21 disposed thereon;

[0047] A first substrate sheet 1 is fixedly mounted on a second substrate sheet 2. The first substrate sheet 1 is a low-resistance silicon sheet. An atomization area corresponding to the first channel 21 is provided on the first substrate sheet 1. The atomization area is provided with array-arranged rhombus-shaped atomization holes 11. A heating node 12 is formed between two adjacent rhombus-shaped atomization holes 11.

[0048] The conductive electrode 3 is fixedly mounted on the surface of the first substrate sheet 1, and symmetrically arranged conductive electrodes 3 are provided on both sides of the atomization area.

[0049] The second substrate sheet 2 is a glass sheet, a quartz sheet or a ceramic sheet. The thickness of the first substrate sheet 1 is 10-500 microns. The second substrate sheet is made of glass, quartz, ceramic and other materials that are not easily damaged and have low thermal conductivity. The second substrate sheet 2 not only supports the first substrate sheet 1, but also reduces the longitudinal conduction of heat, thereby effectively improving the thermal efficiency of the atomizer core.

[0050] See also Figure 2-7 On the other hand, the utility model also discloses a method for manufacturing the atomizing core of the diamond-shaped atomizing hole silicon heating structure, comprising the following steps:

[0051] S1, preparing a second substrate sheet 2, wherein the thickness of the second substrate sheet 2 is 100 μm to 9000 μm;

[0052] S2, processing a first hole 21 on the second substrate sheet 2, wherein the punching process of the first hole 21 is laser punching, sandblasting or corrosion;

[0053] S3, preparing a first substrate sheet 1, and fixing the first substrate sheet 1 on the second substrate sheet 2. The fixing process of the first substrate sheet 1 and the second substrate sheet 2 may specifically adopt an anodic bonding process, a glass paste bonding process, a metal eutectic process or a diffusion bonding process;

[0054] S4, thinning the thickness of the second substrate sheet 2, the thickness of the second substrate sheet 2 after thinning is 10-600 microns, and the thinning process of the second substrate sheet 2 can specifically adopt chemical mechanical thinning or wet etching thinning;

[0055] S5, preparing an atomization network structure on the surface of the first substrate sheet 1 by photolithography and etching process to form array-arranged diamond-shaped atomization holes 11;

[0056] S6. Deposit a conductive electrode 3 on the surface of the first substrate sheet 1, and make a conductive electrode 3 of a specific pattern by dry etching or wet etching process. The metal types of the conductive electrode 3 include but are not limited to Ti / Au, Ti / Pt, Ti / TiN / Au, Ti / TiN / Pt, Ta / Au, Ta / Pt, Ta / TaN / Au, Ta / TaN / Pt and other metal materials that are harmless to the human body.

[0057] Working principle: A liquid storage component, such as liquid storage cotton, is arranged in the first channel 21. When the atomizer core is working, current is applied to the conductive electrodes 3 at both ends of the first substrate sheet 1, and the atomization area on the first substrate sheet 1 generates heat to atomize the liquid absorbed in the liquid storage component. Due to the support of the second substrate sheet 2, the first substrate sheet 1 can reduce the thickness, increase the heating temperature, and reduce heat conduction. At the same time, the specific diamond mesh heating structure formed in the atomization area makes the heat concentration point at the common node of adjacent diamond atomization holes 11, and the heat is relatively concentrated at each node position, further reducing heat conduction and improving thermal efficiency.

[0058] Under the silicon-based heating structure, a glass sheet or ceramic sheet of a certain thickness is used as a substrate for support to form a double-substrate atomization core, which strengthens the strength of the atomization core and reduces the risk of assembly damage. The diamond shape of the atomization hole on the silicon-based heating structure makes the heating nodes relatively concentrated and improves thermal efficiency.

[0059] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes within the technical scope disclosed by the present invention according to the technical scheme and the utility model concept of the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A diamond-shaped atomizing hole silicon heating structure atomizing core, characterized in that: include: A second substrate sheet having a first hole disposed thereon; A first substrate sheet is fixedly mounted on the second substrate sheet, the first substrate sheet is a low-resistance silicon sheet, an atomization area corresponding to the first channel is provided on the first substrate sheet, the atomization area is provided with array-arranged diamond-shaped atomization holes, and a heat generating node is formed between two adjacent diamond-shaped atomization holes; The conductive electrodes are fixedly mounted on the surface of the first substrate sheet, and the conductive electrodes are symmetrically arranged on both sides of the atomization area.

2. The diamond-shaped atomizing hole silicon heating structure atomizing core according to claim 1, characterized in that: The second substrate is a glass sheet, a quartz sheet or a ceramic sheet.

3. The diamond-shaped atomizing hole silicon heating structure atomizing core according to claim 1, characterized in that: The thickness of the first substrate sheet is 10-500 microns.

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