Crucible

Abstract

The utility model discloses a crucible which comprises a quartz crucible body and a carbon-carbon crucible side, the quartz crucible body is arranged in a bowl body, adjacent to a silicon nitride layer, of the crucible side body, and the silicon nitride layer enables the quartz crucible body and the crucible side body to be arranged at an interval. When the silicon nitride layer is a silicon nitride paper layer, the distance between the upper edge of the silicon nitride paper layer and the upper edge of the quartz crucible body is L1, and L1 is larger than or equal to 50 mm. According to the crucible disclosed by the utility model, the silicon nitride layer is arranged between the quartz crucible body and the crucible edge body to separate the quartz crucible body from the crucible edge body, so that the reaction between the quartz crucible body and the crucible edge body can be avoided, no gas is generated, the abnormal conditions such as bulge and deformation of the crucible can be effectively avoided, and the crucible can be normally used.

Description

Technical Field

[0001] The utility model relates to the technical field of crucibles, in particular to a crucible. Background Art

[0002] In the related art, after being made into a crucible, carbon-carbon crucible easily reacts with other substances under high temperature conditions to generate gas, and the gas cannot be discharged smoothly, causing the crucible to bulge. Utility Model Content

[0003] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, one purpose of the utility model is to provide a crucible that avoids the reaction between the quartz crucible body and the crucible body, does not generate gas, can effectively avoid abnormalities such as bulging and deformation of the crucible, and allows the crucible to be used normally.

[0004] The crucible according to the embodiment of the utility model comprises: a quartz crucible body; a carbon-carbon crucible, wherein the quartz crucible body is arranged inside a bowl body of the crucible body adjacent to the silicon nitride layer, and the silicon nitride layer separates the quartz crucible body and the crucible body; when the silicon nitride layer is a silicon nitride paper layer, the distance between the upper edge of the silicon nitride paper layer and the upper edge of the quartz crucible body is L 1 , wherein the L 1 Satisfaction: L 1 ≥50mm.

[0005] According to the crucible of the embodiment of the utility model, a silicon nitride layer is provided between the quartz crucible body and the crucible body to separate the quartz crucible body from the crucible body, thereby avoiding reaction between the quartz crucible body and the crucible body, and no gas is generated. This can effectively avoid abnormalities such as bulging and deformation of the crucible, so that the crucible can be used normally.

[0006] According to some embodiments of the present invention, the carbon-carbon crucible includes: a crucible body, which includes a hollow bowl body formed by side walls, and both ends of the bowl body are open; and a silicon nitride layer, which is at least arranged on the inner surface of the bowl body.

[0007] According to some embodiments of the present invention, the thickness of the silicon nitride layer is d 1 , wherein the d 1 Satisfy: 0.2mm≤d 1 ≤2mm.

[0008] According to some embodiments of the present invention, the particle size of the silicon nitride powder in the silicon nitride layer is d 2 , wherein the d 2 Satisfy: 0.1μm≤d 2 ≤0.3μm.

[0009] According to some embodiments of the present invention, the silicon nitride layer is a silicon nitride slurry coating or a silicon nitride paper layer.

[0010] According to some embodiments of the present invention, when the silicon nitride layer is a silicon nitride slurry coating, the silicon nitride slurry coating is formed by brushing silicon nitride powder slurry; or when the silicon nitride layer is a silicon nitride paper layer, the silicon nitride paper layer is formed by expanding and rolling silicon nitride powder.

[0011] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0013] Figure 1 is a schematic diagram of a carbon-carbon crucible according to an embodiment of the utility model;

[0014] Figure 2 Schematic diagram of a crucible according to an embodiment of the utility model.

[0015] Reference numerals:

[0016] 100, Carbon Carbon Crucible;

[0017] 1. Brass body; 2. Silicon nitride layer;

[0018] 200. crucible; 201. quartz crucible body. DETAILED DESCRIPTION

[0019] Reference below Figure 1-Figure 2 The carbon-carbon crucible 100 with the silicon nitride layer 2 according to the first aspect of the present utility model is described in detail, and the embodiment described with reference to the accompanying drawings is exemplary.

[0020] like Figure 1 and Figure 2 As shown, the carbon-carbon crucible 100 with a silicon nitride layer 2 according to the first aspect of the embodiment of the utility model includes a crucible body 1 and a silicon nitride layer 2.

[0021] Specifically, the main body 1 of the crucible includes a hollow bowl body surrounded by side walls, and the two ends of the bowl body are open. The silicon nitride layer 2 is at least provided on the inner surface of the bowl body. Figure 1In the example, the radial cross section of the crucible body 1 is circular, and the axial cross section of the crucible body 1 is roughly rectangular. Both ends of the axial direction of the crucible body 1 are open. Under high temperature conditions, the crucible body 1 will generate carbon atoms. The silicon nitride layer 2 is coated on the inner wall of the crucible body 1. The silicon nitride layer 2 can isolate the inner wall of the crucible body 1 from the outside world and prevent the crucible body 1 from reacting with other chemical substances. 3 N 4 ) has a diamond-type three-dimensional lattice structure, so silicon nitride has the advantages of high-temperature thermal stability, thermal shock resistance, chemical stability, good electrical insulation and hardness. The melting point of silicon nitride is as high as 1900°C, and the relative density is 3.44. When silicon nitride is heated to 1450-1550°C in air, the structure is still stable. Therefore, by providing a silicon nitride layer 2 on the inner wall surface of the crucible body 1, the inner wall of the crucible body 1 can be isolated from the outside world, preventing the crucible body 1 from reacting with other substances, preventing the crucible body 1 from generating gas due to chemical reactions, and avoiding affecting the normal use of the crucible body 1.

[0022] According to the carbon-carbon crucible 100 with a silicon nitride layer 2 of the embodiment of the utility model, by providing a silicon nitride layer 2 on the inner wall surface of the crucible body 1, it is possible to prevent the crucible body 1 from reacting with other substances, prevent gas from being generated, and ensure the normal use of the crucible body 1.

[0023] According to some embodiments of the present invention, the thickness of the silicon nitride layer 2 is d 1 , where d 1 Satisfy: 0.2mm≤d 1 ≤2mm. Figure 1 As shown, when the thickness of the silicon nitride layer 2 is less than 0.2 mm, the thickness of the silicon nitride layer 2 is too thin, which is not conducive to the isolation of the crucible body 1, and it is difficult to give full play to the role of the silicon nitride layer 2. When the thickness of the silicon nitride layer 2 is greater than 2 mm, the thickness of the silicon nitride layer 2 is too thick, which will make the inner wall of the crucible body 1 too thick, and also increase the weight of the carbon-carbon crucible 100 and the cost of the carbon-carbon crucible 100. Therefore, when the thickness of the silicon nitride layer 2 satisfies 0.2 mm ≤ d 1 When the thickness is ≤2mm, the silicon nitride layer 2 can not only insulate the crucible body 1, but also avoid the inner wall of the carbon-carbon crucible 100 being too thick and heavy, thereby reducing the cost of the carbon-carbon crucible 100 and being beneficial to the protection of the carbon-carbon crucible 100 by the silicon nitride layer 2.

[0024] According to some embodiments of the present invention, the particle size of the silicon nitride powder in the silicon nitride layer 2 is d 2 , where d 2 Satisfy: 0.1μm≤d 2≤0.3μm. When the particle size of the silicon nitride powder in the silicon nitride layer 2 is less than 0.1μm, the particle size of the silicon nitride powder is too small, and a large amount of silicon nitride powder is required, which increases the cost. When the particle size of the silicon nitride powder in the silicon nitride layer 2 is greater than 0.3μm, the particle size of the silicon nitride powder is too large. When the silicon nitride powder is evenly spread, it is not flat enough, and there will be large gaps between the silicon nitride powders, which is not conducive to the final molding of the silicon nitride layer 2. Therefore, the particle size of the silicon nitride powder satisfies 0.1μm≤d 2 When the particle size is ≤0.3 μm, the particle size is moderate, which is conducive to pressing the silicon nitride particles into shape, thereby improving the stability of the silicon nitride layer 2 and the degree of isolation from the inner wall of the carbon-carbon crucible 100.

[0025] According to some embodiments of the utility model, the purity of silicon nitride powder in silicon nitride layer 2 is greater than 99.9%. When the purity of silicon nitride powder in silicon nitride layer 2 is less than 99.9%, the concentration of silicon nitride powder is low. After silicon nitride layer 2 is formed, the density of silicon nitride powder on silicon nitride layer 2 is small, and crucible body 1 will react with silicon nitride layer 2, resulting in silicon nitride layer 2 being unable to isolate crucible body 1. Therefore, making the purity of silicon nitride powder in silicon nitride layer 2 greater than 99.9% can avoid the reaction between crucible body 1 and silicon nitride layer 2, ensure the isolation of crucible body 1 by silicon nitride layer 2, and prevent crucible body 1 from reacting with other substances.

[0026] According to some embodiments of the utility model, the silicon nitride layer 2 is a silicon nitride slurry coating or a silicon nitride paper layer. The use of silicon nitride slurry is convenient for coating the inner wall of the crucible body 1, and the silicon nitride layer 2 is convenient for being evenly applied on the inner wall of the crucible body 1. When the silicon nitride paper layer is used, the silicon nitride paper layer can be directly laid on the inner wall of the crucible body 1, which simplifies the work process and improves the work efficiency. In this way, the inner wall of the crucible body 1 can be isolated from the outside world.

[0027] Further, when the silicon nitride layer 2 is a silicon nitride slurry coating, the silicon nitride slurry coating is formed by brushing silicon nitride powder slurry. Specifically, a certain amount of solvent is measured by using a measuring cylinder, placed in a beaker in an ultrasonic water bath container, the water bath temperature is adjusted to 35-40°C, and a corresponding proportion of high-purity silicon nitride is weighed using an electronic balance with an accuracy of 0.01g, slowly added to the beaker, and ultrasonic stirring is turned on. After the above slurry is ultrasonically stirred for 30 minutes, the silicon nitride slurry is brushed along the inner wall height of the crucible body 1 with a brush, and after the silicon nitride layer 2 is dried at room temperature for 1-1.5 hours, the carbon-carbon crucible 100 is placed in a single crystal furnace for high-temperature calcination for 5-7 hours before it can be put into use.

[0028] When the silicon nitride layer 2 is a silicon nitride paper layer, the silicon nitride paper layer is formed by expanding and rolling silicon nitride powder. Figure 2, silicon nitride is processed into silicon nitride paper powder, and the silicon nitride paper powder is placed in a special material box and evenly flattened, and then the silicon nitride paper powder is placed in a puffing furnace for puffing. After the puffing is completed, it is placed in a special mold and pressed into shape using a pressing rod to form a silicon nitride paper layer. The silicon nitride paper layer is cut and needs to be calcined at high temperature for 5-7 hours before it can be put into use. When placing the silicon nitride paper layer on the inner wall of the crucible body 1, a surrounding paving method needs to be adopted.

[0029] According to some embodiments of the utility model, the silicon nitride powder slurry coating is a mixed slurry of silicon nitride powder and ethanol. Since ethanol has good volatility, using ethanol as the raw material of the silicon nitride powder slurry is conducive to increasing the dispersibility of silicon nitride powder in ethanol, making the silicon nitride powder slurry viscous, which is conducive to improving the efficiency of brushing and molding of the silicon nitride powder slurry, and thus can improve the efficiency of coating the silicon nitride powder slurry. Among them, the weight ratio of silicon nitride powder to ethanol in the mixed slurry of silicon nitride powder and ethanol can be 1:0.2-1:0.9.

[0030] Preferably, the weight ratio of silicon nitride powder to ethanol in the mixed slurry of silicon nitride powder and ethanol is 1:0.4. Therefore, the silicon nitride powder has a better dispersion effect in ethanol, which is suitable for brushing on the inner wall of the crucible body 1 and is conducive to improving the efficiency of brushing the silicon nitride layer 2.

[0031] According to some embodiments of the present invention, the silicon nitride powder slurry coating is a mixed slurry of silicon nitride powder and benzene. Using benzene as a solvent to mix the silicon nitride powder is conducive to improving the uniformity of the silicon nitride powder slurry, thereby improving the brushing uniformity of the silicon nitride powder slurry. Among them, the weight ratio of silicon nitride powder to benzene in the silicon nitride powder slurry coating can be 1:0.2-1:0.9.

[0032] Preferably, the weight ratio of silicon nitride powder to benzene in the mixed slurry of silicon nitride powder and benzene is 1:0.4. Therefore, the dissolution effect of silicon nitride powder in benzene is better, the uniformity of silicon nitride powder slurry is better, and thus the brushing uniformity of silicon nitride powder coating is better.

[0033] The crucible 200 according to the second embodiment of the utility model comprises a quartz crucible body 201 and a carbon-carbon crucible 100 having a silicon nitride layer 2 according to the first embodiment of the utility model. The quartz crucible body 201 is arranged inside the bowl of the crucible body 1 adjacent to the silicon nitride layer 2, and the silicon nitride layer 2 separates the quartz crucible body 201 and the crucible body 1. For example, Figure 2 In the example, the silicon nitride layer 2 is disposed between the quartz crucible body 201 and the crucible body 1 to isolate the quartz crucible body 201 from the crucible body 1 to prevent the quartz crucible body 201 and the crucible body 1 from reacting under high temperature.

[0034] In the prior art, if the contact surface between the quartz crucible body 201 and the crucible body 1 is under high temperature conditions, CO gas will be generated, and the CO gas cannot be discharged smoothly. The specific reaction equation is as follows: SiO 2 +2C=Si+2CO(g) or SiO 2 +3C=SiC+2CO(g), which results in gas remaining between the quartz crucible body 201 and the crucible body 1, and further causes bulging of the crucible 200. By providing a silicon nitride layer 2 between the quartz crucible body 201 and the crucible body 1 to separate the quartz crucible body 201 from the crucible body 1, it is possible to avoid a reaction between the quartz crucible body 201 and the crucible body 1, and no gas is generated, which can effectively prevent abnormalities such as bulging and deformation of the crucible 200, so that the crucible 200 can be used normally.

[0035] According to some embodiments of the present invention, when the silicon nitride layer 2 is a silicon nitride paper layer, the distance between the upper edge of the silicon nitride paper layer and the upper edge of the quartz crucible body 201 is L 1 , where L 1 Satisfaction: L 1 ≥50mm. When the distance between the upper edge of the silicon nitride paper layer and the upper edge of the quartz crucible body 201 is less than 50mm, the distance between the upper edge of the silicon nitride paper layer and the upper edge of the quartz crucible body 201 is narrow, which increases the size of the silicon nitride paper layer used, and the quartz crucible body 201 and the crucible body 1 cannot cover the entire silicon nitride paper layer, which is not conducive to the isolation of the crucible body 1 by the silicon nitride paper layer, and is not conducive to the use of the crucible 200.

[0036] Therefore, the distance between the upper edge of the silicon nitride paper layer and the upper edge of the quartz crucible body 201 is greater than or equal to 50 mm, so that the quartz crucible body 201 and the crucible body 1 can completely cover the silicon nitride paper layer, ensuring the isolation effect of the silicon nitride paper layer on the quartz crucible body 201 and the crucible body 1, which is beneficial to the normal use of the crucible 200.

[0037] Other structures and operations of the crucible 200 according to the embodiment of the present invention are known to those skilled in the art and will not be described in detail here.

[0038] In the description of the present invention, it is necessary to understand that the terms "inner", "section", "axial", "radial", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0039] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0040] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example.

[0041] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A crucible, characterized in that include: Quartz crucible body; Carbon-carbon crucible, the quartz crucible body is arranged inside the bowl body of the crucible body adjacent to the silicon nitride layer, and the silicon nitride layer separates the quartz crucible body and the crucible body; When the silicon nitride layer is a silicon nitride paper layer, the distance between the upper edge of the silicon nitride paper layer and the upper edge of the quartz crucible body is L1, wherein L1 satisfies: L1≥50 mm.

2. The crucible according to claim 1, characterized in that The carbon-carbon crucible comprises: A main body of the pot, the main body of the pot comprising a hollow bowl formed by side walls, and both ends of the bowl are open; A silicon nitride layer is provided at least on the inner surface of the bowl body.

3. The crucible according to claim 2, characterized in that The thickness of the silicon nitride layer is d1, wherein d1 satisfies: 0.2 mm≤d1≤2 mm.

4. The crucible according to claim 2, characterized in that The particle size of the silicon nitride powder in the silicon nitride layer is d2, wherein d2 satisfies: 0.1 μm≤d2≤0.3 μm.

5. The crucible according to claim 2, characterized in that The silicon nitride layer is a silicon nitride slurry coating or a silicon nitride paper layer.

6. The crucible according to claim 5, characterized in that When the silicon nitride layer is a silicon nitride slurry coating, the silicon nitride slurry coating is formed by brushing silicon nitride powder slurry; or When the silicon nitride layer is a silicon nitride paper layer, the silicon nitride paper layer is formed by expanding silicon nitride powder and rolling it.

Images