Ultrasonic device for improving crystallization of czochralski silicon single crystal
By using ultrasonic devices during the growth of single crystal silicon, the directional oscillation in the ultrasonic field and the cooling effect of the water-cooled screen are used to solve the problems of thermal field asymmetry and lattice deformation during the growth of single crystal silicon, and a more stable single crystal growth interface and a more ideal crystal formation effect are achieved.
Patent Information
- Application Number
- CN202421476452.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-26
- Publication Date
- 2025-05-02
- Estimated Expiration
- 2034-06-26
AI Technical Summary
During the growth of single crystal silicon, the fluctuations in atomic vibrations on the crystal interface lead to poor thermal field performance, the temperature gradient on the surface and inside of the crystal increases, causing lattice deformation, which leads to line breakage, and the crystallization effect is not ideal.
An ultrasonic device is designed, including a single crystal furnace, a water-cooled screen, an ultrasonic generator tank, etc. By injecting cooling water into the water-cooled tank in the water-cooled screen, the sound waves output by the ultrasonic probe are used to make the molten silicon produce directional oscillation in the ultrasonic field, uniform temperature distribution, and stabilize the single crystal growth interface.
Through the use of ultrasonic devices, the melt tends to be uniform in the ultrasonic field, the temperature is close to consistent, the symmetry of the heat field becomes better, the single crystal growth interface is stabilized, and the crystallization of straight-lactax silicon single crystal is improved.
Smart Images
Figure CN222821713U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of single crystal silicon manufacturing, in particular to an ultrasonic device for improving the crystallization of direct-pull silicon single crystals. Background Art
[0002] The single crystal silicon Czochralski method is a commonly used crystal growth method, mainly used to produce high-purity single crystal silicon. Its basic principle is to gradually cool and crystallize the silicon melt under high temperature environment, so that the silicon atoms are arranged in an orderly manner to form a single crystal. This process relies on the high solubility of silicon at high temperature, but the solubility will drop sharply during the cooling process, resulting in the crystallization of silicon atoms into single crystals.
[0003] However, fluctuations in the growth rate of single crystal silicon may cause changes in atomic vibrations on the crystal interface, resulting in poor thermal field performance, increased temperature gradients on the surface and inside of the crystal, lattice deformation, and thus wire breakage, resulting in less than ideal crystallization results. For this reason, an ultrasonic device for improving the crystallization of direct-pull silicon single crystals is proposed. Utility Model Content
[0004] The purpose of the utility model is to provide an ultrasonic device for improving the crystallization of CZ silicon single crystals, so as to solve the problems raised in the above-mentioned background technology.
[0005] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: an ultrasonic device for improving the crystallization of a CZ silicon single crystal, comprising a single crystal furnace, a water-cooling screen is arranged inside the single crystal furnace, a water-cooling groove is arranged inside the water-cooling screen, a crucible is fixedly connected to the lower surface of the inner wall of the single crystal furnace, molten silicon is contained inside the crucible, ultrasonic generating grooves are evenly arranged on the outer wall of the single crystal furnace, a mounting plate is fixedly connected to the inner wall of the ultrasonic generating groove, an ultrasonic probe is fixedly installed on the side of the mounting plate close to the single crystal furnace, and the right surface of the single crystal furnace is fixed An ultrasonic generating frame is installed, a power interface is fixedly installed on the upper surface of the ultrasonic generating frame, a transducer is fixedly installed on the inner wall of the ultrasonic generating frame, an output shaft end of the power interface is electrically connected to the transducer, an output shaft end of the transducer is electrically connected to a power amplifier, the power amplifier is fixedly connected to the inner wall of the ultrasonic generating frame, an output shaft end of the power amplifier is electrically connected to an oscillator, the oscillator is fixedly connected to the inner wall of the ultrasonic generating frame, and the oscillator is electrically connected to the ultrasonic probe.
[0006] As a further preferred embodiment of the present technical solution: the outer wall of the water-cooled screen is fixedly connected with a thermal insulation ring, the outer wall of the thermal insulation ring is fixedly connected with a mounting ring, the outer wall of the mounting ring is evenly welded with a mounting block, the upper surface of the mounting block is provided with bolts, and the mounting block is fixedly connected to the inner wall of the single crystal furnace through the bolts.
[0007] As a further preferred embodiment of the technical solution: heat dissipation balls are uniformly welded on the inner wall of the water cooling screen.
[0008] As a further preferred embodiment of the present technical solution: the inner wall of the water-cooling screen is uniformly welded with heat dissipation fins.
[0009] As a further preferred embodiment of the technical solution: a water inlet pipe is connected to the left side of the upper surface of the water-cooling screen, and a water outlet pipe is connected to the right side of the upper surface of the water-cooling screen.
[0010] As a further preferred embodiment of the present technical solution: a furnace mouth is fixedly connected to the upper surface of the single crystal furnace.
[0011] As a further preferred embodiment of the technical solution: a window is provided on the left side of the upper surface of the single crystal furnace, and a CCD camera is installed on the upper surface of the window.
[0012] As a further preferred embodiment of the present technical solution: the height difference between the upper surface of the molten silicon and the upper surface of the ultrasonic probe is 10 mm to 15 mm.
[0013] Compared with the prior art, the beneficial effects of the utility model are:
[0014] The utility model injects cooling water into a water-cooling groove in a water-cooling screen, uses a crystal rod to pull up the molten silicon in a crucible, and the molten silicon is cooled and crystallized under the influence of the water-cooling screen during the pulling process, connects an external power supply to a power supply interface and transmits it to a transducer, and after the power supply is converted into sound waves, it is transmitted to an oscillator through a power amplifier and finally output by an ultrasonic probe. During the growth of a single crystal, the molten silicon is affected by the common frequency of the ultrasonic wave in an ultrasonic field, and directional oscillation is generated, so that the melt tends to be uniform, the temperature tends to be consistent, the symmetry of the thermal field becomes better, and the single crystal growth interface can be stabilized, thereby improving the crystallization of a single crystal of silicon by a Czochralski method. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 This is a schematic diagram of the main structure of the utility model;
[0016] Figure 2 It is a cross-sectional structural schematic diagram of the utility model;
[0017] Figure 3 It is a schematic cross-sectional structure diagram of the water cooling screen in the utility model;
[0018] Figure 4 It is a structural schematic diagram of the ultrasonic generating frame in the utility model.
[0019] In the figure: 1. single crystal furnace; 2. water cooling screen; 3. water cooling tank; 4. crucible; 5. molten silicon; 6. ultrasonic generator tank; 7. mounting plate; 8. ultrasonic probe; 9. ultrasonic generator frame; 10. power interface; 11. transducer; 12. power amplifier; 13. oscillator; 14. thermal insulation ring; 15. mounting ring; 16. mounting block; 17. bolt; 18. heat sink; 19. heat sink fin; 20. water inlet pipe; 21. water outlet pipe; 22. furnace mouth; 23. window; 24. CCD camera. DETAILED DESCRIPTION
[0020] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Examples of the embodiments are shown in the drawings, where the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the drawings are exemplary and are only used to explain the present application, and cannot be understood as limitations on the present application. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model.
[0021] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", and "set" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0022] See also Figure 1-4The utility model provides a technical solution: an ultrasonic device for improving the crystallization of a CZ silicon single crystal, comprising a single crystal furnace 1, a water-cooling screen 2 is arranged inside the single crystal furnace 1, a water-cooling groove 3 is provided inside the water-cooling screen 2, a crucible 4 is fixedly connected to the lower surface of the inner wall of the single crystal furnace 1, molten silicon 5 is contained inside the crucible 4, ultrasonic generating grooves 6 are evenly provided on the outer wall of the single crystal furnace 1, a mounting plate 7 is fixedly connected to the inner wall of the ultrasonic generating groove 6, an ultrasonic probe 8 is fixedly installed on the side of the mounting plate 7 close to the single crystal furnace 1, an ultrasonic generating frame 9 is fixedly installed on the right surface of the single crystal furnace 1, a power interface 10 is fixedly installed on the upper surface of the ultrasonic generating frame 9, a transducer 11 is fixedly installed on the inner wall of the ultrasonic generating frame 9, and the output shaft of the power interface 10 The end is electrically connected to the transducer 11, the output shaft end of the transducer 11 is electrically connected to a power amplifier 12, the power amplifier 12 is fixedly connected to the inner wall of the ultrasonic generating frame 9, the output shaft end of the power amplifier 12 is electrically connected to an oscillator 13, the oscillator 13 is fixedly connected to the inner wall of the ultrasonic generating frame 9, and the oscillator 13 is electrically connected to the ultrasonic probe 8; cooling water is injected into the water-cooling groove 3 in the water-cooling screen 2, and the molten silicon 5 in the crucible 4 is pulled up by the crystal rod. The molten silicon 5 is cooled and crystallized by the water-cooling screen 2 during the pulling process, and the external power supply is connected to the power supply interface 10 and transmitted to the transducer 11. After the power supply is converted into sound waves, it is transmitted to the oscillator 13 through the power amplifier 12, and finally output by the ultrasonic probe 8.
[0023] In this embodiment, specifically: the outer wall of the water-cooled screen 2 is fixedly connected with a heat-insulating ring 14, the outer wall of the heat-insulating ring 14 is fixedly connected with a mounting ring 15, the outer wall of the mounting ring 15 is evenly welded with a mounting block 16, the upper surface of the mounting block 16 is provided with bolts 17, and the mounting block 16 is fixedly connected to the inner wall of the single crystal furnace 1 through the bolts 17; it is used to install the water-cooled screen 2 inside the single crystal furnace 1.
[0024] In this embodiment, specifically: the inner wall of the water-cooling screen 2 is evenly welded with heat dissipation balls 18 , thereby increasing the surface area of the inner wall of the water-cooling screen 2 .
[0025] In this embodiment, specifically: the inner wall of the water-cooling screen 2 is uniformly welded with heat dissipation fins 19 , which further increases the surface area of the inner wall of the water-cooling screen 2 .
[0026] In this embodiment, specifically: the left side of the upper surface of the water-cooling screen 2 is connected with a water inlet pipe 20 , and the right side of the upper surface of the water-cooling screen 2 is connected with a water outlet pipe 21 , which are used to introduce cooling water into or out of the water-cooling screen 2 .
[0027] In this embodiment, specifically: a furnace opening 22 is fixedly connected to the upper surface of the single crystal furnace 1 .
[0028] In this embodiment, specifically: a window 23 is opened on the left side of the upper surface of the single crystal furnace 1 , and a CCD camera 24 is installed on the upper surface of the window 23 , so as to facilitate observation of the crystallization state in the single crystal furnace 1 .
[0029] In this embodiment, specifically: the height difference between the upper surface of the molten silicon 5 and the upper surface of the ultrasonic probe 8 is 10 mm to 15 mm.
[0030] The working principle of the utility model is as follows: cooling water is injected into the water cooling groove 3 in the water cooling screen 2, and the molten silicon 5 in the crucible 4 is pulled up by the crystal rod. The molten silicon 5 is cooled and crystallized under the influence of the water cooling screen 2 during the pulling process. The external power supply is connected to the power supply interface 10 and transmitted to the transducer 11. The power supply is converted into sound waves and transmitted to the oscillator 13 through the power amplifier 12, and finally output by the ultrasonic probe 8, thereby forming an ultrasonic device for improving the crystallization of CZ silicon single crystal. In the process of single crystal growth, the molten silicon 5 is affected by the ultrasonic common frequency in the ultrasonic field, and directional oscillation is generated, so that the melt tends to be uniform, the temperature tends to be consistent, the thermal field symmetry is improved, and the single crystal growth interface can be stabilized, thereby improving the crystallization of CZ silicon single crystal.
[0031] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.
Claims
1. An ultrasonic device for improving the crystallization of a CZ silicon single crystal, comprising a single crystal furnace (1), characterized in that: The single crystal furnace (1) is provided with a water cooling screen (2) inside, and a water cooling groove (3) is provided inside the water cooling screen (2). A crucible (4) is fixedly connected to the lower surface of the inner wall of the single crystal furnace (1), and molten silicon (5) is contained inside the crucible (4). Ultrasonic generating grooves (6) are evenly provided on the outer wall of the single crystal furnace (1), and a mounting plate (7) is fixedly connected to the inner wall of the ultrasonic generating groove (6). An ultrasonic probe (8) is fixedly installed on the side of the mounting plate (7) close to the single crystal furnace (1). An ultrasonic generating frame (9) is fixedly installed on the right surface of the single crystal furnace (1), and the upper surface of the ultrasonic generating frame (9) is fixedly A power interface (10) is installed, and a transducer (11) is fixedly installed on the inner wall of the ultrasonic generating frame (9). The output shaft end of the power interface (10) is electrically connected to the transducer (11), and the output shaft end of the transducer (11) is electrically connected to a power amplifier (12), and the power amplifier (12) is fixedly connected to the inner wall of the ultrasonic generating frame (9). The output shaft end of the power amplifier (12) is electrically connected to an oscillator (13), and the oscillator (13) is fixedly connected to the inner wall of the ultrasonic generating frame (9), and the oscillator (13) is electrically connected to the ultrasonic probe (8).
2. The ultrasonic device for improving the crystallization of CZ silicon single crystal according to claim 1, characterized in that: The outer wall of the water-cooling screen (2) is fixedly connected to a heat insulating ring (14), the outer wall of the heat insulating ring (14) is fixedly connected to a mounting ring (15), the outer wall of the mounting ring (15) is evenly welded with a mounting block (16), the upper surface of the mounting block (16) is provided with bolts (17), and the mounting block (16) is fixedly connected to the inner wall of the single crystal furnace (1) via the bolts (17).
3. The ultrasonic device for improving the crystallization of CZ silicon single crystal according to claim 2, characterized in that: Heat dissipation balls (18) are uniformly welded to the inner wall of the water cooling screen (2).
4. The ultrasonic device for improving the crystallization of CZ silicon single crystal according to claim 2, characterized in that: The inner side wall of the water cooling screen (2) is uniformly welded with heat dissipation fins (19).
5. The ultrasonic device for improving the crystallization of CZ silicon single crystal according to claim 2, characterized in that: The left side of the upper surface of the water cooling screen (2) is connected to a water inlet pipe (20), and the right side of the upper surface of the water cooling screen (2) is connected to a water outlet pipe (21).
6. The ultrasonic device for improving the crystallization of CZ silicon single crystal according to claim 2, characterized in that: A furnace opening (22) is fixedly connected to the upper surface of the single crystal furnace (1).
7. The ultrasonic device for improving the crystallization of CZ silicon single crystal according to claim 6, characterized in that: A window (23) is provided on the left side of the upper surface of the single crystal furnace (1), and a CCD camera (24) is installed on the upper surface of the window (23).
8. The ultrasonic device for improving the crystallization of CZ silicon single crystal according to claim 6, characterized in that: The height difference between the upper surface of the molten silicon (5) and the upper surface of the ultrasonic probe (8) is 10 mm to 15 mm.