Ion source structure of semiconductor ion implanter

Abstract

The utility model discloses an ion source structure of a semiconductor ion implanter, which comprises a device body, the device body comprises a fixed disc, an anode is arranged above the fixed disc, the lower part of the fixed disc is connected with a support plate, an ionization box is arranged above the anode, and the ionization box is connected with the support plate. An electron beam shell and a clamp are installed in the ionization box, a cathode is connected to the upper portion of the ionization box, a lamp filament is installed on the clamp, a connecting buckle is fixedly connected to the lower portion of the supporting plate, a rotating column is fixedly installed in the connecting buckle, a limiting disc is fixedly installed on one side of the connecting buckle, and T-shaped bases are arranged at the left end and the right end of the lower portion of the supporting plate. The rotating column is rotatably mounted in the T-shaped base, arc-shaped grooves are formed in the T-shaped base and the limiting disc, and second bolts are inserted into the arc-shaped grooves, so that the mounting angle of the ion source can be adjusted, the application range of the device is widened, the practicability and convenience of the device are improved, and the trouble that the device is inconvenient to mount in the later period is avoided.

Description

Technical Field

[0001] The utility model belongs to the technical field of ion sources, and in particular relates to an ion source head structure of a semiconductor ion implanter. Background Art

[0002] An ion implanter is an important manufacturing process equipment used to perform ion doping in the manufacturing process of integrated circuits, which includes an ion source that converts gaseous materials or solid materials into ion beams.

[0003] The ion source, also known as the ion source head, includes a filament, a fixture, and a cathode. Different voltages are applied to the filament and the cathode. The filament is heated to generate hot electrons, which collide with the cathode through the voltage difference, thereby causing the cathode to generate more evenly distributed hot electrons. The hot electrons react with the gas material or solid material in the chamber of the ion source head structure to generate ions.

[0004] The ion source of the existing semiconductor ion implanter needs to be installed in the semiconductor ion implanter during use. The existing ion source installation method is mostly to fasten directly by bolts. Although the installation method is simple and direct, it is easy to reduce the installation application range of the ion source. The installation hole needs to be opened more accurately. If there are semiconductor ion implanters of different heights, it is inconvenient for the ion source to be docked and installed with them. Therefore, we need to upgrade and transform it based on the existing technology. Utility Model Content

[0005] The purpose of the utility model is to provide an ion source structure of a semiconductor ion implanter to solve the problems raised in the above-mentioned background technology.

[0006] In order to solve the above problems, the following technical solutions are provided:

[0007] An ion source structure of a semiconductor ion implanter is designed, comprising a device body, wherein the device body comprises a fixed disk, an anode is arranged above the fixed disk and a support plate is connected below the fixed disk, an ionization box is installed above the anode, an electron beam shell and a clamp are installed in the ionization box and a cathode is connected above the ionization box, a filament is installed on the clamp, a connecting buckle is fixedly connected below the support plate, a rotating column is fixedly installed in the connecting buckle and a limiting disk is fixedly installed on one side of the connecting buckle, T-shaped bases are arranged at both left and right ends below the support plate, the rotating column is rotatably installed in the T-shaped base, arc grooves are opened in the T-shaped base and the limiting disk, a second bolt is inserted in the arc groove, and a nut is screwed on the second bolt.

[0008] Furthermore, the fixing plate and the supporting plate are both provided with screw holes, and the screw holes are provided in multiple groups, and the first bolts are screwed into the screw holes.

[0009] Furthermore, a knob is fixedly mounted on one end of the rotating column, an anti-skid groove is provided in the knob, and the anti-skid groove is provided in multiple groups.

[0010] Furthermore, the T-shaped base is symmetrically arranged in two groups, and fixing holes are opened inside the lower part of the T-shaped base, and the fixing holes are opened in multiple groups.

[0011] Furthermore, a separation hole is provided in the electron beam shell, and the electron beam shell is movably connected with the ionization box.

[0012] Furthermore, the position of the limiting plate and the arc groove of the T-shaped base are arranged to be consistent, and the limiting plate is movably connected to the arc groove of the T-shaped base.

[0013] Compared with the prior art, the beneficial effects of the utility model are:

[0014] 1. The utility model can adjust the installation angle of the ion source by arranging a support plate, a connecting buckle, a rotating column, a limit plate, a knob, a T-shaped base, an arc groove, a second bolt, a nut and a fixing hole, thereby improving the application range of the device, increasing the practicality and convenience of the device, and avoiding the trouble of inconvenient installation of the device in the later stage.

[0015] With reference to the following description and drawings, specific embodiments of the present invention are disclosed in detail, indicating the manner in which the principles of the present invention can be adopted. It should be understood that the embodiments of the present invention are not limited in scope. Within the spirit and scope of the appended claims, the embodiments of the present invention include many changes, modifications and equivalents. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0017] Figure 1 It is a three-dimensional diagram of the overall structure of an ion source structure of a semiconductor ion implanter according to the utility model;

[0018] Figure 2 A three-dimensional diagram of an ion source structure of an ion source head structure of a semiconductor ion implanter according to the utility model;

[0019] Figure 3 It is a cross-sectional exploded view of an ion source structure of an ion source head structure of a semiconductor ion implanter according to the utility model;

[0020] Figure 4 A three-dimensional diagram of the adjustment structure of an ion source head structure of a semiconductor ion implanter according to the utility model;

[0021] Figure 5 The utility model is an exploded view of the adjustment structure of the ion source head structure of a semiconductor ion implanter.

[0022] In the figure: 1, device body; 2, fixing plate; 4, anode; 5, ionization box; 6, electron beam shell; 7, cathode; 8, clamp; 9, filament; 10, screw hole; 11, first bolt; 12, support plate; 13, connecting buckle; 14, rotating column; 15, limit plate; 16, knob; 161, anti-slip groove; 17, T-type base; 18, arc groove; 19, second bolt;

[0023] 20. Nut; 21. Fixing hole. DETAILED DESCRIPTION

[0024] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further described below in conjunction with specific implementation methods.

[0025] like Figure 1 - Figure 5 As shown, a gift that can prevent items from shaking provided by this embodiment includes a device body 1, which includes a fixed plate 2, an anode 4 is arranged above the fixed plate 2 and a support plate 12 is connected to the bottom of the fixed plate 2, an ionization box 5 is installed above the anode 4, an electron beam shell 6 and a clamp 8 are installed in the ionization box 5, and a cathode 7 is connected to the top of the ionization box 5, a filament 9 is installed on the clamp 8, a connecting buckle 13 is fixedly connected to the bottom of the support plate 12, a rotating column 14 is fixedly installed in the connecting buckle 13, and a limiting plate 15 is fixedly installed on one side of the connecting buckle 13, T-shaped bases 17 are arranged on both left and right ends below the support plate 12, the rotating column 14 is rotatably installed in the T-shaped base 17, an arc groove 18 is opened in the T-shaped base 17 and the limiting plate 15, a second bolt 19 is inserted in the arc groove 18, and a nut 20 is screwed on the second bolt 19.

[0026] Preferably, screw holes 10 are provided in both the fixing plate 2 and the supporting plate 12, and there are multiple groups of screw holes 10. The first bolt 11 is threaded in the screw hole 10. By providing the first bolt 11, the fixing plate 2 and the supporting plate 12 can be connected and fixed, which increases the intimacy and connectivity of the device and ensures the safety of the device during use. A knob 16 is fixedly installed at one end of the rotating column 14, and an anti-skid groove 161 is provided in the knob 16, and there are multiple groups of anti-skid grooves 161. By providing the anti-skid grooves 161, the anti-skid property of the knob 16 is increased, thereby preventing the user from slipping when turning the knob 16.

[0027] Preferably, two groups of T-shaped bases 17 are symmetrically arranged, and fixing holes 21 are opened inside the lower part of the T-shaped base 17. There are multiple groups of fixing holes 21. By setting the fixing holes 21, it is convenient for the user to fix and install the device later, avoiding the trouble of inconvenient installation of the device. Separation holes are opened in the electron beam shell 6, and the electron beam shell 6 is movably connected with the ionization box 5. By setting the electron beam shell 6, the electron beam in the device can be separated and fixed. The position of the limit plate 15 and the arc groove 18 of the T-shaped base 17 are set to be consistent, and the limit plate 15 is movably connected with the arc groove 18 of the T-shaped base 17, which is convenient for the user to control the device and increases the connectivity between the devices.

[0028] The use principle and use process of the utility model are as follows: when in use, the fixing plate 2 and the support plate 12 are fixed by the first bolt 11, and the T-shaped base 17 with the support plate 12 is connected to the semiconductor ion implanter through the fixing hole 21. When the device needs to be adjusted in angle during installation, the user loosens the nut 20 from the second bolt 19 and screws it until the nut 20 is separated from the arc groove 18 of the T-shaped base 17. At this time, the user rotates the knob 16. When the knob 16 rotates, the rotating column 14 is driven to rotate. When the rotating column 14 rotates, the connecting buckle 13 and the limiting plate 15 are driven to rotate. When the connecting buckle 13 rotates, the supporting plate 12 and the fixing plate 2 are driven to rotate. When the limiting plate 15 rotates, the second bolt 19 is driven to adjust the angle in the arc groove 18 of the T-shaped base 17. After adjusting to a suitable angle, the user can tighten the second bolt 19 with the nut 20, so as to adjust the installation angle of the ion source, improve the application range of the device, increase the practicality and convenience of the device, and avoid the trouble of inconvenient installation of the device in the later stage.

[0029] In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front end", "rear end", "two ends", "one end", "the other end" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0030] In the description of the present utility model, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "provided with", "connected", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.

[0031] The present invention is described above in conjunction with specific implementation methods, but it should be clear to those skilled in the art that these descriptions are exemplary and are not intended to limit the scope of protection of the present invention. Those skilled in the art can make various modifications and variations to the present invention based on the spirit and principles of the present invention, and these modifications and variations are also within the scope of the present invention.

Claims

1. An ion source structure of a semiconductor ion implanter, characterized in that: The device comprises a device body (1), wherein the device body (1) comprises a fixed disk (2), an anode (4) is arranged above the fixed disk (2), and a support plate (12) is connected below the fixed disk (2), an ionization box (5) is installed above the anode (4), an electron beam shell (6) and a clamp (8) are installed in the ionization box (5), and a cathode (7) is connected above the ionization box (5), a filament (9) is installed on the clamp (8), and a connecting buckle (13) is fixedly connected below the support plate (12). A rotating column (14) is fixedly installed in the connecting buckle (13) and a limiting plate (15) is fixedly installed on one side of the connecting buckle (13). T-shaped bases (17) are arranged at both left and right ends below the support plate (12). The rotating column (14) is rotatably installed in the T-shaped base (17). An arc groove (18) is provided in the T-shaped base (17) and the limiting plate (15). A second bolt (19) is inserted in the arc groove (18), and a nut (20) is screwed on the second bolt (19).

2. The ion source head structure of a semiconductor ion implanter according to claim 1, characterized in that: The fixing plate (2) and the supporting plate (12) are both provided with screw holes (10), and the screw holes (10) are provided in a plurality of groups. The first bolts (11) are screwed into the screw holes (10).

3. The ion source structure of a semiconductor ion implanter according to claim 1, characterized in that: A knob (16) is fixedly mounted on one end of the rotating column (14), an anti-slip groove (161) is provided in the knob (16), and the anti-slip groove (161) is provided in a plurality of groups.

4. The ion source structure of a semiconductor ion implanter according to claim 1, characterized in that: The T-shaped base (17) is symmetrically arranged in two groups, and a fixing hole (21) is opened inside the lower part of the T-shaped base (17), and the fixing hole (21) is opened in multiple groups.

5. The ion source head structure of a semiconductor ion implanter according to claim 1, characterized in that: The electron beam shell (6) is provided with a separation hole, and the electron beam shell (6) is movably engaged with the ionization box (5).

6. The ion source head structure of a semiconductor ion implanter according to claim 1, characterized in that: The position of the limiting plate (15) and the arc groove (18) of the T-shaped base (17) are arranged in the same manner, and the limiting plate (15) is movably connected to the arc groove (18) of the T-shaped base (17).

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