Display backboard and Micro-LED display panel

Abstract

The embodiment of the utility model provides a display back plate and a Micro-LED display panel, which are used for solving the technical problem that the display effect is seriously influenced as splicing gaps exist in a Micro-LED display screen formed by splicing the existing Micro-LED display panels with metal wires on the side surfaces. The display backboard is made of materials with the dielectric constant smaller than 10, the capacitance coupling effect is effectively reduced, power consumption is reduced, and the integrity and thermal stability of signal transmission are improved; according to the display backboard, linear electric connection between the front wiring layer and the back wiring layer is achieved through the through hole vertical interconnection structure, replacement of side face metal wiring is achieved, side face space occupation of the display backboard caused by side face metal wiring is completely avoided, and the display backboard keeps a completely flat side face structure. Furthermore, the splicing side surfaces of a plurality of Micro-LED display panels can be tightly aligned through a splicing process which is simple, easy to implement and high in product yield, so that the Micro-LED display screen with a consistent display effect is formed.

Description

Technical Field

[0001] The embodiments of the utility model relate to the field of display technology, and in particular to a display backplane and a Micro-LED display panel. Background Art

[0002] Micro-LED display, a display device composed of multiple Micro-LED display panels encapsulated with IC components, is highly praised for its excellent stability, long life, high definition and wide temperature adaptability. In addition, it also excels in low energy consumption, high color saturation, fast response and high contrast. Compared with OLED display, Micro-LED has a 30-fold increase in brightness, while the power consumption is only 10% of LED and 50% of OLED. These significant advantages make Micro-LED display show great application potential in many fields such as high-definition display, head-mounted devices, augmented reality, optical communication, micro-projection, optogenetics and wearable technology.

[0003] The manufacturing process of Micro-LED display panels involves miniaturizing and matrixing the traditional LED structure to produce red, green and blue primary color Micro-LED chips with a size of only tens of microns or even a few microns. These tiny Micro-LED chips need to be accurately transferred, assembled and wire-bonded in large quantities. The process is not only complex, but also extremely technically difficult.

[0004] In the manufacturing process of Micro-LED display panels, the packaging of IC components is particularly critical. Traditional packaging technology is to package IC components in the non-luminous display area on the front of the display panel, resulting in a large non-display area packaging edge on the front of the display panel, which limits the possibility of seamlessly splicing Micro-LED display panels into Micro-LED displays. To solve this technical problem, researchers have developed a new packaging technology that packages IC components on the back of the display backplane through side metal traces to eliminate the impact of the non-display area packaging edge on the display splicing.

[0005] However, in the process of implementing the technical solution in the embodiment of the utility model, the inventors found that the existing Micro-LED display panel with side metal wiring has at least the following technical problems:

[0006] The display screen formed by splicing the Micro-LED display panels with metal wiring on the side has gaps at the splicing points, which cannot achieve completely seamless splicing, affecting the visual effect of the display screen. In addition, the manufacturing process of the Micro-LED display panel packaging IC component is complex and the yield rate is relatively low. Utility Model Content

[0007] In view of this, the purpose of the embodiments of the utility model is to provide a display backplane and a Micro-LED display panel. The light-emitting display area of ​​the display backplane is provided with a through-hole vertical interconnection structure, which replaces the side metal wiring to achieve a straight-line electrical connection between the front wiring layer and the back wiring layer, so as to solve the technical problem that the Micro-LED display screen spliced ​​by the existing Micro-LED display panels with side metal wiring has a splicing gap, which seriously affects the display effect.

[0008] In order to achieve the above purpose, the technical solutions adopted in the embodiments of the present invention are as follows:

[0009] In a first aspect, an embodiment of the present invention provides a display backplane, which is applied to a Micro-LED display panel; the display backplane includes:

[0010] The backplane substrate is made of a material with a dielectric constant less than 10; a plurality of pads are arranged on the front of the backplane substrate in an array; the plurality of pads are used to install Micro-LED chips; and the back of the backplane substrate is used to package IC components;

[0011] The front wiring layer is a metal conductive layer, which is arranged on the front side of the backplane substrate and is electrically connected to the plurality of pads;

[0012] The back wiring layer is a metal conductive layer, which is arranged on the back side of the backplane substrate and is used for electrical connection with the IC component;

[0013] The through-hole vertical interconnection structure includes a plurality of columnar conductive structures arranged in the light-emitting display area of ​​the display backplane and passing through the backplane substrate, so as to realize the electrical connection between the front wiring layer and the back wiring layer; the plurality of columnar conductive structures are obtained by filling conductive materials in a plurality of through holes passing through the backplane substrate.

[0014] Optionally, the flatness of the backplane substrate is less than 20 μm, and the warpage is less than 30 μm.

[0015] Optionally, the thickness of the metal conductive layer of the front wiring layer is 0.2-1 μm, and the thickness of the metal conductive layer of the back wiring layer is 0.5-3 μm.

[0016] Optionally, the front wiring layer and the back wiring layer are single metal layers or multiple metal layers.

[0017] Optionally, the material used for the multi-metal layer is one of titanium tungsten / gold, chromium / gold, titanium tungsten / nickel / gold, titanium / copper / gold, chromium / copper / gold, and molybdenum / copper / gold.

[0018] Optionally, the columnar conductive structure is obtained by filling a conductive material in a through hole penetrating the backplane substrate through physical vapor deposition, chemical vapor deposition, electroplating or sintering.

[0019] Optionally, the conductive material used to form the columnar conductive structure is one of a metal conductive material, a metal composite conductive material, an organic conductive material, and an inorganic conductive material.

[0020] Optionally, the conductive material used to form the columnar conductive structure is one of copper, silver, gold, aluminum tin, and copper tin.

[0021] Optionally, the front surface of the backplane substrate is blackened.

[0022] In a second aspect, the present invention also provides a Micro-LED display panel in an embodiment, including:

[0023] The aforementioned display back panel;

[0024] A plurality of Micro-LED chips are fixedly connected to a plurality of pads on the front side of the display backplane;

[0025] The IC component is packaged on the back side of the backplane substrate of the display backplane.

[0026] Based on the above technical solution, the display backplane in the embodiment of the utility model is made of a material with a dielectric constant less than 10, which effectively reduces the capacitive coupling effect, reduces power consumption, and improves the integrity and thermal stability of signal transmission; the through-hole vertical interconnection structure is arranged in the luminous display area of ​​the display backplane, and the front wiring layer and the back wiring layer are electrically connected in a straight line through the through-hole vertical interconnection structure, thereby realizing the replacement of the side metal routing.

[0027] Compared with the traditional display backplane with side metal routing, the display backplane in the embodiment of the utility model realizes the straight-line electrical connection between the front wiring layer and the back wiring layer through the through-hole vertical interconnection structure, completely avoiding the side space occupation of the display backplane caused by the side metal routing, and the display backplane maintains a completely flat side structure. Furthermore, through a simple, easy-to-implement, and high-yield splicing process, the spliced ​​sides of multiple Micro-LED display panels can be closely aligned to form a Micro-LED display screen with consistent display effects. In addition, the use of the through-hole vertical interconnection structure simplifies the circuit layout of the Micro-LED display panel, shortens the signal transmission distance, improves the signal transmission efficiency, reduces the signal loss, and is conducive to the high-resolution display of the Micro-LED display panel.

[0028] Therefore, the display backplane in the embodiment of the utility model realizes a straight-line electrical connection between the front wiring layer and the back wiring layer through the through-hole vertical interconnection structure, which effectively solves the technical problem of the splicing gap caused by the side metal wiring. This technical means not only improves the signal transmission efficiency, high-resolution display capability, and power consumption of the Micro-LED display panel, but also improves the overall performance and display effect of the spliced ​​Micro-LED display screen. The application of this technical means provides strong support for the manufacture of large-size, high-resolution Micro-LED display screens, and is expected to promote the further development and popularization of Micro-LED technology in various application fields. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0030] Figure 1 A schematic structural diagram of a display backplane in an embodiment of the utility model is shown;

[0031] Figure 2 A schematic front structural diagram of the Micro-LED display panel in an embodiment of the utility model is shown.

[0032] The corresponding relationship between the reference numerals and component names in the figures is as follows:

[0033] Micro-LED display panel 10, display backplane 100, backplane substrate 110, front wiring layer 120, solder pad 130, back wiring layer 140, through-hole vertical interconnection structure 150, Micro-LED chip 200. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in combination with actual application and with reference to the drawings of the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0035] The display backplane in the embodiment of the utility model is applied to a Micro-LED display panel. The Micro-LED display panel is used to produce a Micro-LED display screen by splicing. The Micro-LED display screen can be widely used in various smart electronic devices such as personal computers, laptops, tablet computers, smart phones, smart wearable devices, smart TVs, etc.

[0036] The existing Micro-LED display screens spliced ​​by Micro-LED display panels with metal wiring on the side have splicing gaps, which seriously affects the technical problem of display effects.

[0037] After in-depth research, the inventors found that the reason why the Micro-LED display screens spliced ​​together from existing Micro-LED display panels have splicing gaps is not due to defects in the splicing process. The real reason is that the side metal wiring will form a protrusion on the side of the display backplane. The protrusion makes it impossible to achieve a flush interface when two adjacent Micro-LED display panels are spliced, and thus it is impossible to achieve completely seamless splicing.

[0038] To solve this problem, the inventors further studied and found that if the electrical connection structure between the front wiring layer and the back wiring layer can be set in the display backplane, the side space of the display backplane can be saved, and the interface between the two Micro-LED display panels can be spliced ​​flush, thereby achieving completely seamless splicing of the Micro-LED display screen. Specifically, through-hole technology can be used to set a vertical signal transmission channel in the light-emitting display area of ​​the display backplane to achieve straight-line interconnection between the front wiring layer and the back wiring layer.

[0039] However, in the process of implementing the technical solution in this practical embodiment, the inventor found that the through-hole vertical interconnection structure formed by the through-hole technology in the existing commonly used display backplane has a high capacitive coupling effect, which affects the signal transmission quality. To this end, the inventor conducted in-depth research on the electromagnetic properties of various display backplane materials and found that using a material with a dielectric constant of less than 10 to make the backplane substrate can effectively reduce the capacitive coupling effect and improve signal integrity and anti-interference capabilities.

[0040] Based on the above research, the inventors provide a display backplane and a Micro-LED display panel. The backplane substrate of the display backplane is made of a material with a dielectric constant less than 10, and a through-hole vertical interconnection structure is formed in the light-emitting display area of ​​the display backplane through a through-hole technology. Based on the through-hole vertical interconnection structure, the front wiring layer and the back wiring layer are electrically connected in a straight line to achieve the replacement of the side metal routing.

[0041] The technical solution of the utility model will be described below in conjunction with the accompanying drawings and embodiments.

[0042] Figure 1 A schematic structural diagram of a display backplane in an embodiment of the utility model is shown.

[0043] It should be understood that in order to clearly and completely illustrate the technical solution of the display backplane in the embodiment of the present invention through diagrams, Figure 1 The diagram of the associated Micro-LED chip is given in the figure, which is only for the purpose of explaining the technical solution. The components of the display backplane in the embodiment of the utility model do not include the Micro-LED chip.

[0044] Now refer to Figure 1 As shown, in an embodiment of the utility model, a display backplane is provided, which is applied to a Micro-LED display panel; the display backplane includes:

[0045] The backplane substrate 110 is made of a material with a dielectric constant less than 10; a plurality of pads 130 are arranged in an array on the front of the backplane substrate 110; the plurality of pads 130 are used to install the Micro-LED chips 200; the back of the backplane substrate 110 is used to package IC components;

[0046] The front wiring layer 120 is a metal conductive layer, which is disposed on the front side of the backplane substrate 110 and is electrically connected to the plurality of pads;

[0047] The back wiring layer 140 is a metal conductive layer, which is disposed on the back side of the backplane substrate 110 and is used for electrical connection with the IC component;

[0048] The through-hole vertical interconnection structure 150 includes a plurality of columnar conductive structures arranged in the light-emitting display area of ​​the display backplane and passing through the backplane substrate 110, and is used to realize the electrical connection between the front wiring layer 120 and the back wiring layer 140; the plurality of columnar conductive structures are obtained by filling conductive materials in a plurality of through holes passing through the backplane substrate 110.

[0049] In the embodiment of the utility model, the technical function of replacing the metal wiring on the side of the display backplane is decomposed into: the backplane substrate 110 is made of a material that can effectively reduce the capacitive coupling effect of the through-hole interconnection, and the through-hole vertical interconnection structure 150 is arranged in the light-emitting display area of ​​the display backplane. Among them:

[0050] The backplane substrate 110 is made of a material that can effectively reduce the capacitive coupling effect of through-hole interconnections. The sub-technical functions are as follows:

[0051] The backplane substrate 110 is made of a material with a dielectric constant less than 10. The back side of the backplane substrate 110 is used to encapsulate IC components, and the front side is used to assemble the Micro-LED chip 200; the front side of the backplane substrate 110 is provided with the front wiring layer 120 and a plurality of the pads 130 arranged in an array, the front wiring layer 120 is electrically connected to the plurality of the pads 130, and the back side of the backplane substrate 110 is provided with the back wiring layer 140, and the back wiring layer 140 is used to be electrically connected to the IC components.

[0052] The realization of the sub-technical function of setting the through-hole vertical interconnection structure 150 in the light-emitting display area of ​​the display backplane is as follows:

[0053] A plurality of through holes penetrating the backplane substrate 110 are arranged in the light-emitting display area corresponding to the display backplane, and conductive material is filled in the through holes to form a plurality of columnar conductive structures; the plurality of columnar conductive structures are electrically connected to the front wiring layer 120 and the back wiring layer 140.

[0054] Through the above technical means, the side metal wiring that realizes the electrical connection between the front wiring layer 120 and the back wiring layer 140 is replaced by the through-hole vertical interconnection structure 150, ensuring that the display backplane maintains a completely flat side structure. Furthermore, multiple Micro-LED display panels can be seamlessly spliced ​​into a Micro-LED display screen by closely aligning the spliced ​​sides.

[0055] In the embodiment of the utility model, the backplane substrate 110 is made of a material with a dielectric constant less than 10, which gives the backplane substrate 110 the advantages of low capacitive coupling effect, low energy loss, small signal delay, reduced electromagnetic interference, high signal transmission fidelity, and good thermal stability, so that the Micro-LED display panel composed of it can operate with high performance and stability for a long time in a wide temperature range.

[0056] Exemplarily, the material with a dielectric constant less than 10 used for the backplane substrate 110 is one of ceramic, quartz, glass, and plastic.

[0057] The backplane substrate 110 made of glass has a dielectric constant of about 5, is resistant to high temperatures, impacts and chemical corrosion, and is suitable for manufacturing display panels for high-end display screens. At the same time, glass materials are preferred for their high cost-effectiveness, low processing difficulty and high product utilization rate.

[0058] The back panel substrate 110 made of plastic has a dielectric constant of about 2-3 and is light in weight and low in cost, and is suitable for manufacturing display panels for mid- and low-end display screens.

[0059] The backplane substrate 110 made of ceramic material has a dielectric constant of about 3-8, has good heat dissipation performance and high temperature resistance, and is suitable for manufacturing display panels for high-brightness display screens.

[0060] The backplane substrate 110 made of quartz has a dielectric constant of about 2.2, has excellent dielectric properties and good heat dissipation performance, and is suitable for display panels of high-end display screens.

[0061] When manufacturing the backplane substrate 110, the base material of the selected material is first processed to meet the size and shape requirements of the backplane design. Subsequently, a predetermined process flow, such as heat treatment or chemical treatment, is used to ensure the dielectric properties and physical stability of the material.

[0062] By selecting a suitable material to manufacture the backplane substrate 110 based on specific application requirements, the use requirements of corresponding application scenarios can be effectively met.

[0063] In the embodiment of the utility model, the front side of the backplane substrate 110 is provided with a plurality of pads 130 for mounting the Micro-LED chips 200 in an array arrangement; the IC components of the Micro-LED display panel are arranged on the back side of the backplane substrate 110.

[0064] The flatness and warping of the backplane substrate 110 directly affect the high-precision assembly of a large number of Micro-LED chips 200.

[0065] In order to ensure that the Micro-LED chip 200 can be accurately assembled on the pad 130 and remain stable, in a possible implementation manner, the flatness of the backplane substrate 110 is less than 20 μm and the warpage is less than 30 μm.

[0066] In the embodiment of the utility model, the flatness of the backplane substrate 110 can be controlled to be less than 20 μm, preferably less than 10 μm, by CNC (computer numerical control) machining combined with grinding and polishing. Controlling the flatness of the backplane substrate 110 within this range can ensure the accuracy of the assembly of the Micro-LED chip 200 and reduce the difficulty of assembly. At the same time, it is also conducive to maintaining the stability of the Micro-LED chip 200, so that the Micro-LED display panel can operate stably for a long time.

[0067] The flatness detection can be specifically achieved through high-precision detection tools such as automated optical detection systems or atomic force microscopes (AFM).

[0068] In the embodiment of the utility model, the warpage of the backplane substrate 110 can be controlled to be less than 30 μm, preferably 15 to 20 μm, by optimizing the processing technology, such as adjusting the heating rate, cooling speed or using stress relief technology. Controlling the warpage of the backplane substrate 110 within this range is conducive to making the backplane substrate 110 have good flatness and overall structural stability, reducing errors in the process of assembling the Micro-LED chip 200, improving the optical display effect of the manufactured Micro-LED display panel, and improving its working reliability and durability.

[0069] The warpage detection can be achieved through high-precision measuring equipment, such as laser scanners or 3D coordinate measuring machines.

[0070] In the embodiment of the utility model, the front wiring layer 120 and the back wiring layer are both metal conductive layers. The front wiring layer 120 is arranged on the front of the backplane substrate 110, electrically connected to the pad 130, and used to transmit electrical signals to the Micro-LED chip 200 mounted on the pad 130; the back wiring layer 140 is arranged on the back of the backplane substrate 110, and is electrically connected to the IC component of the Micro-LED display panel, and is used to transmit control signals and data sent by the IC component.

[0071] In a possible implementation manner, the thickness of the metal conductive layer of the front wiring layer 120 is 0.2-1 μm, and the thickness of the metal conductive layer of the back wiring layer 140 is 0.5-3 μm.

[0072] In the embodiment of the utility model, the thickness of the metal conductive layer of the front wiring layer 120 can be controlled within the range of 0.2 to 1 μm through a precise coating formation process, so as to reduce the delay of electrical signal transmission while ensuring sufficient conductivity; the thickness of the metal conductive layer of the back wiring layer 140 is controlled within the range of 0.5 to 3 μm, ensuring that the back wiring layer 140 can provide better current carrying capacity and reliability, so as to provide stable power supply to IC components and improve the transmission quality of output signals of IC components.

[0073] By optimizing the thickness of the metal conductive layer of the front wiring layer 120 and the back wiring layer 140 , it is ensured that the Micro-LED display panel made of the display backplane has good electrical and mechanical properties to meet the needs of long-term operation.

[0074] In a possible implementation manner, the front wiring layer 120 and the back wiring layer 140 are single metal layers or multiple metal layers.

[0075] In an embodiment of the utility model, the front wiring layer 120 and the back wiring layer 140 can specifically be a single metal layer or a multi-metal layer. Among them, the implementation of the single metal layer is to form a continuous conductive path by selecting a single metal material with high conductivity and chemical stability, such as copper or silver. The single metal layer has a simple structure and is suitable for applications that require relatively simple circuit layer structures; and the multi-metal layer implementation process involves multi-layer metal stacking, including a combination of different metals or alloys such as copper, silver, gold, nickel, and titanium. The multi-metal layer can utilize the unique advantages of each metal layer, such as improving wear resistance, enhancing adhesion, or improving conductivity. For example, a sandwich structure of titanium / copper / gold can provide excellent conductivity and good corrosion resistance. Multi-metal layers are suitable for more complex and demanding technical applications.

[0076] Exemplarily, the material used for the single metal layer is one of gold, silver, copper, aluminum, molybdenum, nickel, titanium or platinum. The material used for the multi-metal layer is one of titanium tungsten / gold, chromium / gold, titanium tungsten / nickel / gold, titanium / copper / gold, chromium / copper / gold, molybdenum / copper / gold.

[0077] In the embodiment of the utility model, the through-hole vertical interconnection structure 150 is composed of a plurality of columnar conductive structures arranged in the light-emitting display area of ​​the display backplane and passing through the backplane substrate 110. The plurality of columnar conductive structures are obtained by filling a plurality of through holes passing through the backplane substrate with conductive materials.

[0078] The columnar conductive structure is obtained by filling a conductive material in a through hole penetrating the backplane substrate 110 through physical vapor deposition, chemical vapor deposition, electroplating or sintering.

[0079] Among them, physical vapor deposition (PVD) is usually carried out in a vacuum environment by a physical method such as magnetron sputtering to directly deposit conductive materials such as copper and silver into the through holes of the backplane substrate 110. The physical vapor deposition process can form a uniform and dense conductive structure in the through hole, so that the columnar conductive structure has good conductive properties, which is suitable for applications with high requirements for conductive properties.

[0080] Chemical vapor deposition (CVD) is a process in which a gas, under specific temperature and pressure conditions, deposits a conductive material into the through hole of the backplane substrate 110 through a chemical reaction. The chemical vapor deposition process can form a complete columnar conductive structure in the through hole.

[0081] The electroplating process is to deposit the conductive material into the through hole of the backplane substrate 110 through an electrochemical reaction. The electroplating process is simple, has a high deposition rate and good coverage uniformity, and is suitable for large-scale batch production.

[0082] The sintering process is to mix the conductive powder material with the additive, inject it into the through hole through a mold and physical pressure, and then solidify the powder in the through hole of the backplane substrate 110 at high temperature. The columnar conductive structure formed by the sintering process has good mechanical strength and conductive properties, and is suitable for high-performance and high-temperature resistant applications.

[0083] During the specific implementation process, each process requires precise control of process parameters, such as temperature, pressure, chemical concentration, etc., to ensure the quality and filling effect of the conductive material filling the through-hole.

[0084] In a possible implementation manner, the conductive material used to form the columnar conductive structure is one of a metal conductive material, a metal composite conductive material, an organic conductive material, and an inorganic conductive material.

[0085] Among them, metal conductive materials are widely used due to their excellent conductive properties. Exemplarily, the metal conductive material is one of copper, silver, gold, tin, and aluminum. Among them, copper is widely used in industry due to its high conductivity and cost-effectiveness. Silver and gold are suitable for the manufacture of high-performance display panels due to their excellent conductivity and corrosion resistance.

[0086] Metal composite materials combine the properties of multiple metals and can provide stronger electrical conductivity and mechanical properties. For example, the metal composite material is one of aluminum-tin and copper-tin. Aluminum-tin or copper-tin alloys are suitable for manufacturing display panels with high structural strength requirements due to their good electrical conductivity and mechanical strength and low acquisition cost.

[0087] Columnar conductive structures made of organic and inorganic conductive materials can provide the desired conductive properties under specific conditions and may also bring additional performance advantages such as flexibility or stability under special environments.

[0088] For example, the organic conductive material may be a conductive polymer, and the inorganic conductive material may be conductive carbon black and indium tin oxide.

[0089] Typically, one of copper, silver, gold, aluminum tin, and copper tin is a common conductive material for forming the columnar conductive structure.

[0090] By setting the through-hole vertical interconnection structure 150 in the light-emitting display area of ​​the display backplane, the through-hole vertical interconnection structure 150 is electrically connected to the front wiring layer 120 and the back wiring layer 140 in a straight line, so as to replace the side metal wiring, so that the display backplane maintains a completely flat side structure. Furthermore, when splicing the Micro-LED display screen, since the splicing sides between adjacent Micro-LED display panels are flush, completely tight and seamless splicing can be achieved, which greatly improves the display effect and viewing experience of the spliced ​​Micro-LED display screen.

[0091] In addition, the use of the through-hole vertical interconnect structure 150 to replace the side metal routing also simplifies the circuit layout of the display backplane, shortens the signal transmission distance, improves the signal transmission efficiency, and reduces signal loss, which is beneficial to the high-resolution display of the Micro-LED display panel composed of it.

[0092] It can be seen that in the embodiment of the utility model, the through-hole vertical interconnection structure 150 penetrating the backplane substrate 110 is provided in the light-emitting display area of ​​the backplane substrate 110 to replace the side metal wiring, thereby realizing the straight-line electrical connection between the front wiring layer 120 and the back wiring layer 140. Therefore, the side space of the display backplane is not occupied, and a completely flat side structure is maintained.

[0093] Specifically, the backplane substrate 110 is made of a material with a dielectric constant less than 10, which has a lower through-hole interconnect capacitive coupling effect. The front wiring layer 120 and the array-arranged pads 130 are arranged on the front side of the backplane substrate 110, and the back wiring layer 140 and IC components are arranged on the back side. A plurality of through holes penetrating the backplane substrate 110 are arranged in the light-emitting display area of ​​the display backplane, and a conductive material is filled in the through holes to form a plurality of columnar conductive structures; the plurality of columnar conductive structures are electrically connected to the front wiring layer 120 and the back wiring layer 140.

[0094] When the display panel formed by the display backplane is working, the IC component transmits control signals and data to the Micro-LED chip 200 mounted on the plurality of pads 130 through the back wiring layer 140, the through-hole vertical interconnect structure 150 and the front wiring, thereby achieving precise control and driving of the Micro-LED chip 200.

[0095] Through the electrical connection working mechanism of direct through-hole connection, the side metal wiring is replaced, and the display backplane maintains a completely flat side structure. Therefore, when splicing the Micro-LED display screen, the splicing sides between adjacent Micro-LED display panels are flush, which can achieve completely tight and seamless splicing of the Micro-LED display screen, greatly improving the display effect and viewing experience of the spliced ​​display screen. This through-hole vertical interconnection working mechanism simplifies the circuit layout of the display backplane, reduces the difficulty of the manufacturing process, and correspondingly improves the product yield. In addition, since the front wiring layer 120 is electrically connected to the back wiring layer 140 in a straight line, the signal transmission distance is shortened, the signal loss is reduced, and the overall display performance of the Micro-LED display screen is further improved.

[0096] Compared with the traditional display backplane with side metal routing, the display backplane in the embodiment of the utility model realizes the straight-line electrical connection between the front wiring layer 120 and the back wiring layer 140 through the through-hole vertical interconnection structure 150, completely avoiding the side space occupation of the display backplane caused by the side metal routing, and the display backplane maintains a completely flat side structure. Furthermore, through a simple, easy-to-implement, and high-yield splicing process, the spliced ​​sides of multiple Micro-LED display panels can be closely aligned to form a Micro-LED display screen with a consistent display effect. In addition, the use of the through-hole vertical interconnection structure 150 simplifies the circuit layout of the Micro-LED display panel, shortens the signal transmission distance, improves the signal transmission efficiency, reduces the signal loss, and is conducive to the high-resolution display of the Micro-LED display panel.

[0097] Therefore, the display backplane in the embodiment of the utility model realizes a straight-line electrical connection between the front wiring layer 120 and the back wiring layer 140 through the through-hole vertical interconnection structure 150, which effectively solves the technical problem of the splicing gap caused by the side metal routing. This technical means not only improves the signal transmission efficiency and high-resolution display capability of the Micro-LED display panel, reduces power consumption, but also improves the overall performance and display effect of the spliced ​​Micro-LED display screen. The application of this technical means provides strong support for the manufacture of large-size, high-resolution Micro-LED display screens, and is expected to promote the further development and popularization of Micro-LED technology in various application fields.

[0098] In order to improve the display effect of the Micro-LED display panel formed by the backplane substrate 110, in a possible implementation manner, the front surface of the backplane substrate 110 is blackened.

[0099] In the embodiment of the utility model, the blackening treatment is performed by coating a highly light-absorbing material on the front side of the backplane substrate 110 through a coating process, such as spraying or dipping, to form a light-absorbing coating. The highly light-absorbing material needs to have good optical properties and chemical stability to ensure that its performance does not degrade during long-term use. The light-absorbing coating formed by the blackening treatment can effectively absorb the light projected by the Micro-LED chip 200, reduce the reflection of light, make the black display purer, improve the overall contrast of the Micro-LED display panel, and at the same time enhance the color saturation and the sense of hierarchy of details, so that the Micro-LED display panel can provide a clearer, richer, more delicate and vivid display effect.

[0100] Figure 2 A schematic front structural diagram of the Micro-LED display panel in an embodiment of the utility model is shown.

[0101] Now refer to Figure 2 As shown, the embodiment of the utility model further provides a Micro-LED display panel 10, including:

[0102] The aforementioned display back panel 100;

[0103] A plurality of Micro-LED chips 200 are fixedly connected to a plurality of pads on the front side of the display backplane 100;

[0104] The IC component is packaged on the back side of the back panel substrate 110 of the display back panel 100 .

[0105] In the embodiment of the utility model, the Micro-LED display panel 10 is used to produce a Micro-LED display screen by splicing.

[0106] It should be understood that the display backplane 100 in the embodiment of the Micro-LED display panel of the present invention is the display backplane in the aforementioned embodiment of the display backplane of the present invention. For the convenience and simplicity of description, the description of the display backplane in the embodiment of the Micro-LED display panel of the present invention can refer to the relevant description in the embodiment of the display backplane, and will not be repeated here.

Claims

1. Display backplane, applied to Micro-LED display panel; characterized in that: The display backplane comprises: A backplane substrate (110) is made of a material with a dielectric constant less than 10; a plurality of solder pads (130) are arranged on the front side of the backplane substrate (110) in an array arrangement; the plurality of solder pads (130) are used to install Micro-LED chips (200); and a back side of the backplane substrate (110) is used to package IC components; A front wiring layer (120) is a metal conductive layer, arranged on the front side of the backplane substrate (110) and electrically connected to the plurality of pads (130); A back wiring layer (140) is a metal conductive layer, which is arranged on the back side of the back plate substrate (110) and is used for electrical connection with the IC component; A through-hole vertical interconnection structure (150) comprises a plurality of columnar conductive structures arranged in the light-emitting display area of ​​the display backplane and penetrating the backplane substrate (110), and is used to realize the electrical connection between the front wiring layer (120) and the back wiring layer (140); the plurality of columnar conductive structures are obtained by filling a plurality of through-holes penetrating the backplane substrate (110) with conductive materials.

2. The display backplane according to claim 1, characterized in that: The flatness of the backplane substrate (110) is less than 20 μm, and the warpage is less than 30 μm.

3. The display backplane according to claim 1, wherein the thickness of the metal conductive layer of the front wiring layer (120) is 0.2-1 μm, and the thickness of the metal conductive layer of the back wiring layer (140) is 0.5-3 μm.

4. The display backplane according to any one of claims 1 to 3, characterized in that: The front wiring layer (120) and the back wiring layer (140) are single metal layers or multi-metal layers.

5. The display backplane according to claim 4, characterized in that: The material used for the multi-metal layer is one of titanium tungsten / gold, chromium / gold, titanium tungsten / nickel / gold, titanium / copper / gold, chromium / copper / gold, and molybdenum / copper / gold.

6. The display backplane according to any one of claims 1 to 3, characterized in that: The columnar conductive structure is obtained by filling a conductive material in a through hole penetrating the backplane substrate (110) through physical vapor deposition, chemical vapor deposition, electroplating or sintering.

7. The display backplane according to any one of claims 1 to 3, characterized in that: The conductive material used to form the columnar conductive structure is one of a metal conductive material, a metal composite conductive material, an organic conductive material, and an inorganic conductive material.

8. The display backplane according to any one of claims 1 to 3, characterized in that: The conductive material used to form the columnar conductive structure is one of copper, silver, gold, aluminum tin, and copper tin.

9. The display backplane according to claim 1, characterized in that: The front surface of the back panel substrate (110) has been subjected to a blackening treatment.

10. Micro-LED display panel, characterized in that: include: The display back panel (100) according to any one of claims 1 to 9; A plurality of Micro-LED chips (200) fixedly connected to a plurality of solder pads (130) on the front side of the display backplane (100); The IC component is packaged on the back side of the back panel substrate (110) of the display back panel (100).

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