Millimeter wave frequency band TX emission channel center frequency calibration circuit based on CMOS technology
By designing a capacitor fine-tuning switch in the TX transmission channel of the millimeter wave band and controlling the capacitor using the MOS switch, fine-tuning of the center frequency is achieved, solving the problem that traditional methods are difficult to adjust the center frequency in the millimeter wave band.
Patent Information
- Application Number
- CN202421586534.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-05
- Publication Date
- 2025-05-02
- Estimated Expiration
- 2034-07-05
AI Technical Summary
In the millimeter wave band, the traditional RF channel center frequency adjustment method does not work because the MOS tube has a large parasitic capacitance, making it difficult to design a small enough transformer or inductor to achieve frequency adjustment.
A central frequency calibration circuit for the millimeter wave band TX transmission channel based on CMOS process is designed. By connecting the input stage and output stage capacitance fine-tuning switches at both ends of the TX primary and secondary transformer coils, the MOS switch controls the fine-tuning of the capacitor to achieve fine-tuning of the center frequency.
A smaller capacity adjustment in the millimeter wave band is achieved, simplifying the design structure, and only adding multiple thin wires to the existing design solves the problem of difficulty in adjusting the center frequency.
Smart Images
Figure CN222827233U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to a radio frequency circuit, more specifically, to a millimeter wave frequency band TX transmission channel center frequency calibration circuit based on CMOS technology. Background Art
[0002] Generally, TX RF channels based on CMOS technology have a center frequency calibration function, but we rarely see this design in millimeter wave bands (such as W band). The traditional principle of center frequency adjustment of lower frequency RF channels, such as Figure 1 As shown in the figure, the center frequency is adjusted by connecting a switch capacitor B in parallel at the input or output of transformer A. However, this method does not work in the millimeter wave band. Because the parasitic capacitance of the MOS tube is very large in the millimeter wave band, if the above-mentioned method of connecting a switch capacitor in parallel is used to adjust the center frequency, it will require the design of a transformer or inductor with a very small inductance. In the millimeter wave band, the minimum inductance of the transformer or inductor cannot be reduced all the time because it is limited by the self-resonant frequency. In this context, a new solution for adjusting the center frequency of the TX channel is needed. Utility Model Content
[0003] Based on this, it is necessary to provide a millimeter wave frequency band TX transmission channel center frequency calibration circuit based on CMOS technology to address the above technical problems.
[0004] In order to solve the above technical problems, the utility model adopts the following technical solutions:
[0005] A millimeter wave frequency band TX transmission channel center frequency calibration circuit based on CMOS technology, characterized in that the millimeter wave frequency band TX transmission channel center frequency calibration circuit based on CMOS technology comprises a TX primary amplifier, a TX primary transformer coil, a TX secondary amplifier and a TX secondary transformer coil, the output terminal of the TX primary amplifier is coupled to the TX primary transformer coil, the TX primary transformer coil is coupled to the TX secondary transformer coil, and the TX secondary transformer coil is coupled to the input terminal of the TX secondary amplifier,
[0006] A plurality of input-stage capacitor fine-tuning switches are connected in parallel before the two ends of the TX primary transformer coil, and a plurality of output-stage capacitor fine-tuning switches are connected in parallel between the two ends of the TX secondary transformer coil.
[0007] As a preferred embodiment of the utility model, the input stage capacitance fine-tuning switch comprises a first central thin line, and first MOS switches are provided at both ends of the central thin line.
[0008] The output stage capacitance fine-tuning switch comprises a second central thin line, and second MOS switches are arranged at both ends of the second central thin line.
[0009] As a preferred embodiment of the present utility model, the number of the output-stage capacitance fine-tuning switches is equal to the number of the input-stage capacitance fine-tuning switches.
[0010] As a preferred embodiment of the present invention, the first central thin line is arranged at the periphery of the TX primary transformer coil, and the second central thin line is arranged at the periphery of the TX secondary transformer coil.
[0011] As a preferred embodiment of the present invention, the first central thin wire and the second central thin wire are copper wires or gold wires.
[0012] As a preferred embodiment of the present invention, the first center thin line and the second center thin line are in the shape of multiple broken lines.
[0013] Compared with the prior art, the utility model has the following beneficial effects:
[0014] The utility model provides a CMOS-based millimeter-wave frequency band TX transmission channel center frequency calibration circuit, which controls the switch states of the input-stage capacitor fine-tuning switch and the output-stage capacitor fine-tuning switch to change the grounding state of the switch to achieve the size of the transformer's equivalent capacitance to ground, thereby changing the output signal center frequency of each stage of the circuit. Compared with the prior art, the TX transmission channel center frequency calibration circuit has a smaller adjustable capacitance and can achieve fine tuning of the center frequency. The TX transmission channel center frequency calibration circuit has a simple design structure, and only needs to add multiple thin wires on the basis of the existing design, and the position of adding the thin wires is flexible, which solves the problem that the previous millimeter-wave TX circuit was difficult to adjust the center frequency. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] In order to more clearly illustrate the scheme in the utility model, a brief introduction is given below to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0016] Figure 1 A circuit diagram for adjusting the center frequency of an existing lower frequency radio frequency channel;
[0017] Figure 2 This is a circuit diagram of a millimeter wave frequency band TX transmission channel center frequency calibration circuit based on CMOS technology of the utility model;
[0018] Figure 3This is a schematic diagram of the wiring of the center frequency calibration circuit of the millimeter wave frequency band TX transmission channel based on CMOS technology of the utility model;
[0019] The markings in the figure are as follows:
[0020] 11. TX primary amplifier; 12. TX primary transformer coil; 21. TX secondary amplifier; 22. TX secondary transformer coil; L1. first center thin line; L2. first MOS switch; L3. second center thin line; L4. second MOS switch; S1, S2, S3, input stage capacitor fine-tuning switch; S4, S5, S6, output stage capacitor fine-tuning switch; 22. TX secondary transformer coil. DETAILED DESCRIPTION
[0021] In order to enable those skilled in the art to better understand the solution of the utility model, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is only a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the utility model.
[0022] like Figure 2 As shown, the millimeter wave frequency band TX transmission channel center frequency calibration circuit based on CMOS process includes a TX primary amplifier 11, a TX primary transformer coil 12, a TX secondary amplifier 21 and a TX secondary transformer coil 22, the output terminal of the TX primary amplifier 11 is coupled to the TX primary transformer coil 12, the TX primary transformer coil 12 is coupled to the TX secondary transformer coil 22, and the TX secondary transformer coil 22 is coupled to the input terminal of the TX secondary amplifier 21.
[0023] A plurality of input-stage capacitance fine-tuning switches are connected in parallel between the two ends of the TX primary transformer coil 12 , for example, including an input-stage capacitance fine-tuning switch S1 , an input-stage capacitance fine-tuning switch S2 , and an input-stage capacitance fine-tuning switch S3 .
[0024] A plurality of output-stage capacitance fine-tuning switches are connected in parallel between the two ends of the TX secondary transformer coil 22 , for example, including an output-stage capacitance fine-tuning switch S4 , an output-stage capacitance fine-tuning switch S5 , and an output-stage capacitance fine-tuning switch S6 .
[0025] The input stage capacitance fine-tuning switch S1, the input stage capacitance fine-tuning switch S2, and the input stage capacitance fine-tuning switch S3 have the same structure and all include a first central thin line L1. Both ends of the central thin line L1 are provided with a first MOS switch L2.
[0026] The output stage capacitance fine-tuning switch S4, the output stage capacitance fine-tuning switch S5 and the output stage capacitance fine-tuning switch S6 have the same structure and all include a second central thin line L3. Both ends of the second central thin line L3 are provided with a second MOS switch L4.
[0027] It should be noted that the number of the output-stage capacitance fine-tuning switches is equal to the number of the input-stage capacitance fine-tuning switches.
[0028] like Figure 3 As shown, the first center thin line L1 is arranged at the periphery of the TX primary transformer coil 12 , and the first center thin line L1 is in a multi-segment broken line shape, and the shape of the first center thin line L1 is adapted to the outer contour of the TX primary transformer coil 12 .
[0029] Similarly, the second central thin line L3 is disposed on the periphery of the TX secondary transformer coil 22 (not shown in the figure). The second central thin line L3 is in the shape of a multi-segment broken line.
[0030] It should be noted that the positions of the first central thin line L1 and the second central thin line L3 are not limited to the periphery of the transformer coil 22, and may also be arranged near the transmission line.
[0031] In addition, the first center thin wire L1 and the second center thin wire L3 are copper wires or gold wires.
[0032] The working mode of this embodiment is described below.
[0033] The switching states of the input stage capacitor fine-tuning switch and the output stage capacitor fine-tuning switch are controlled to change the grounding state of the switch, thereby realizing the size of the transformer's equivalent capacitance to ground, thereby changing the output signal center frequency of each stage of the circuit.
[0034] Compared with the existing technology, the adjustable capacitance of the TX transmission channel center frequency calibration circuit is smaller, and the center frequency can be fine-tuned. The design structure of the TX transmission channel center frequency calibration circuit is simple, and it only needs to add multiple thin wires on the basis of the existing design, and the location of adding thin wires is flexible, which solves the problem that the center frequency of the previous millimeter wave TX circuit is difficult to adjust.
[0035] In addition, the transistor is a field effect transistor or a triode. When these crystals are field effect transistors, they can be N-type transistors (such as metal-oxide-semiconductor field effect transistors (N-Metal-Oxide-Semiconductor, NMOS)), or P-type metal-oxide-semiconductor field effect transistors, complementary metal-oxide-semiconductor field effect transistors, and other circuit structure types.
[0036] The terms "coupling" and "coupling" involved in the embodiments of the present application should be understood in a broad sense. For example, they may refer to a direct physical connection, or an indirect connection achieved through electronic devices, such as a connection achieved through resistors, inductors, capacitors or other electronic devices.
[0037] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection, an electrical connection, or communication with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0038] Obviously, the embodiments described above are only some embodiments of the present application, rather than all embodiments. The preferred embodiments of the present application are given in the accompanying drawings, but they do not limit the patent scope of the present application. The present application can be implemented in many different forms. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive. Although the present application is described in detail with reference to the aforementioned embodiments, for those skilled in the art, it is still possible to modify the technical solutions recorded in the aforementioned specific implementation methods, or to replace some of the technical features therein with equivalents. Any equivalent structure made using the contents of the specification and drawings of this application, directly or indirectly used in other related technical fields, is similarly within the scope of patent protection of this application.
Claims
1. A millimeter wave band TX transmission channel center frequency calibration circuit based on CMOS technology, characterized in that: The millimeter wave frequency band TX transmission channel center frequency calibration circuit based on CMOS technology comprises a TX primary amplifier (11), a TX primary transformer coil (12), a TX secondary amplifier (21) and a TX secondary transformer coil (22); the output terminal of the TX primary amplifier (11) is coupled to the TX primary transformer coil (12); the TX primary transformer coil (12) is coupled to the TX secondary transformer coil (22); the TX secondary transformer coil (22) is coupled to the input terminal of the TX secondary amplifier (21); a plurality of input stage capacitor fine-tuning switches S1, S2 and S3 are connected in parallel between the two ends of the TX primary transformer coil (12); and a plurality of output stage capacitor fine-tuning switches S4, S5 and S6 are connected in parallel between the two ends of the TX secondary transformer coil (22).
2. The millimeter wave frequency band TX transmission channel center frequency calibration circuit based on CMOS technology according to claim 1, characterized in that: The input stage capacitance fine-tuning switches S1, S2, and S3 include a first central thin line L1, and both ends of the central thin line L1 are provided with a first MOS switch L2. The output stage capacitance fine-tuning switches S4, S5, and S6 include a second central thin line L3, and both ends of the second central thin line L3 are provided with a second MOS switch L4.
3. The millimeter wave frequency band TX transmission channel center frequency calibration circuit based on CMOS technology according to claim 1, characterized in that: The number of the output stage capacitance fine-tuning switches S4, S5, S6 is equal to the number of the input stage capacitance fine-tuning switches S1, S2, S3.
4. The millimeter wave frequency band TX transmission channel center frequency calibration circuit based on CMOS technology according to claim 2, characterized in that: The first central thin line L1 is arranged at the periphery of the TX primary transformer coil (12), and the second central thin line L3 is arranged at the periphery of the TX secondary transformer coil (22).
5. The millimeter wave frequency band TX transmission channel center frequency calibration circuit based on CMOS technology according to claim 2, characterized in that: The first center thin wire L1 and the second center thin wire L3 are copper wires or gold wires.
6. The millimeter wave frequency band TX transmission channel center frequency calibration circuit based on CMOS technology according to claim 2, characterized in that: The first center thin line L1 and the second center thin line L3 are in the shape of multiple broken lines.