Testing system for testing transient photoelectric performance of semiconductor photoelectric device

Abstract

The utility model discloses a test system for testing the transient photoelectric performance of a semiconductor photoelectric device, and the system comprises a test board which is used for fixing a device to be tested; the steady-state light source emits steady-state light to irradiate the to-be-detected device so as to generate a steady-state photovoltage signal in the to-be-detected device; the transient pulse light source emits pulse light to irradiate the to-be-tested device so as to generate a transient photovoltage signal in the to-be-tested device; the light path selection unit is used for cutting off or starting the irradiation of the steady-state light and the pulsed light to the device to be detected; the light intensity adjusting unit is arranged between the transient pulse light source and the device to be tested so as to adjust the pulse light; the signal acquisition unit and the to-be-tested device form a test loop and acquire steady-state photovoltage and transient photovoltage signals; the potentiometers are arranged at two ends of the signal acquisition unit in parallel; the signal generator is used for generating a pulse voltage signal so as to be selectively loaded in the test loop; and a control unit that controls the test system to perform any one of a linear boost charge extraction test, a transient photovoltage test, and a transient photocurrent test.

Description

Technical Field

[0001] The utility model generally relates to the technical field of transient photoelectric performance testing of semiconductor photoelectric devices, and more specifically, to a testing system for transient photoelectric performance testing of semiconductor photoelectric devices. Background Art

[0002] The charge transport properties of photogenerated carriers in semiconductor optoelectronic devices vary according to their structure and internal electric field characteristics. For semiconductor optoelectronic devices with PN structures, due to the high carrier concentration in the photosensitive layer, the depletion layer width of the junction region is often smaller than the width of the entire device, and there is basically no built-in electric field outside the junction region. Therefore, the photogenerated carriers of this type of semiconductor optoelectronic device are mainly transferred from the photosensitive layer to the external circuit through the diffusion movement of minority carriers. Therefore, the carrier recombination lifetime inside the device plays a key role in the properties of semiconductor optoelectronic devices and directly affects the diffusion length of the device.

[0003] For semiconductor optoelectronic devices with a PIN structure, the photosensitive layer is mainly composed of low-doped or undoped semiconductor materials, and electron / hole transport layers are arranged at both ends to form a PIN junction structure. The intrinsic carrier concentration inside the material of this device is often limited, so that the width of the depletion layer occupies a large proportion of the width of the entire photosensitive layer, that is, the junction width is large, so that there is a spatial electric field in most areas of the entire device. In this case, the photogenerated carriers mainly drift through the built-in electric field. The photogenerated electrons gradually move to the N region through the built-in electric field, and the photogenerated holes gradually move to the P region through the built-in electric field, and then are transmitted to the external circuit. Therefore, the mobility of photogenerated carriers under the built-in electric field is an important characterization parameter, which directly affects the performance of this type of semiconductor optoelectronic devices and is an important factor affecting the carrier photoelectric conversion efficiency.

[0004] At present, the technical means to characterize the microscopic mechanism of photoelectric conversion dynamics of semiconductor optoelectronic devices mainly include frequency domain (including frequency modulated photovoltage signal) and time domain measurement (transient spectrum based on pulsed light, transient photovoltage test), etc. These transient test methods are mainly aimed at testing the minority carrier lifetime, while there are fewer test methods for the mobility of photogenerated charges in semiconductor optoelectronic devices.

[0005] The utility model provides a test system capable of testing the carrier mobility of photogenerated charges in semiconductor photoelectric devices, and is compatible with transient photovoltage and transient photocurrent tests, thereby being able to implement transient photoelectric performance tests for various semiconductor photoelectric devices in a set of test systems. Utility Model Content

[0006] According to an embodiment of the utility model, a test system for testing the transient photoelectric performance of a semiconductor photoelectric device is provided, comprising: a test bench, the test bench comprising an electrode fixture for fixing the semiconductor photoelectric device to be tested; a steady-state light source, the steady-state light source being configured to emit steady-state light to irradiate the semiconductor photoelectric device to be tested, thereby generating a steady-state photovoltage signal inside the semiconductor photoelectric device to be tested; a transient pulse light source, the transient pulse light source being configured to emit pulse light to irradiate the semiconductor photoelectric device to be tested, thereby generating a transient photovoltage signal inside the semiconductor photoelectric device to be tested; an optical path selection unit, the optical path selection unit being arranged between the steady-state light source and the semiconductor photoelectric device to be tested and between the transient pulse light source and the semiconductor photoelectric device to be tested, so as to cut off or start irradiation of the semiconductor photoelectric device to be tested by the steady-state light and the pulse light; a light intensity adjustment unit, the A light intensity adjustment unit is arranged between the transient pulse light source and the semiconductor optoelectronic device to be tested, so as to adjust the pulse light; a signal acquisition unit, which forms a test circuit with the semiconductor optoelectronic device to be tested fixed on the electrode fixture and is configured to collect steady-state photovoltage signals and transient photovoltage signals; a potentiometer, which is arranged at both ends of the signal acquisition unit in parallel; a signal generator, which is configured to generate a pulse voltage signal to be selectively loaded in the test circuit; and a control unit, which is connected to and controls the steady-state light source, the transient pulse light source, the optical path selection unit, the light intensity adjustment unit, the signal acquisition unit, the potentiometer and the signal generator, so that the test system can be configured to perform any one of a linear boost charge extraction test, a transient photovoltage test and a transient photocurrent test.

[0007] In some embodiments, when the test system is configured to perform the linear boost charge extraction test, the control unit controls the optical path selection unit to cut off the irradiation of the steady-state light on the semiconductor optoelectronic device under test.

[0008] In some embodiments, when the test system is configured to perform the transient photovoltage test and the transient photocurrent test, the control unit controls the signal generator to be bypassed from the test loop.

[0009] In some embodiments, the test system also includes a pulse delay generator connected between the signal generator and the transient pulse light source, the pulse delay generator is connected to the control unit and the signal acquisition unit, and is configured to adjust the pulse time delay between the pulse voltage signal and the pulse light.

[0010] In some embodiments, the steady-state light source comprises an LED light source.

[0011] In some embodiments, the LED light source comprises a white light LED light source.

[0012] In some embodiments, the transient pulse light source comprises a nanosecond laser.

[0013] In some embodiments, the signal acquisition unit includes a digital oscilloscope.

[0014] In some embodiments, the optical path selection unit includes a dual-channel electrically controlled optical shutter.

[0015] In some embodiments, the light intensity adjustment unit comprises a gradient attenuation sheet.

[0016] In some embodiments, the semiconductor optoelectronic device to be tested includes any one of a crystalline silicon solar cell, a thin film solar cell, an organic solar cell, a perovskite solar cell, a PN type photodetector, and a PIN type photodetector. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings are incorporated herein and form a part of the specification, illustrating embodiments of the present invention and together with the description further serve to explain the principles of the present invention and enable those skilled in the relevant art to make and use the present invention.

[0018] Figure 1 A schematic diagram of a test system for testing transient photoelectric performance of a semiconductor photoelectric device according to an embodiment of the utility model is shown;

[0019] Figure 2 Shows that when using Figure 1 A simplified schematic diagram of a test system for testing a semiconductor optoelectronic device for carrier mobility testing; and

[0020] Figure 3 Shows that when using Figure 1 A simplified schematic diagram of a test system for performing transient photovoltage and transient photocurrent tests on a semiconductor optoelectronic device under test.

[0021] Various embodiments will be described with reference to the accompanying drawings. DETAILED DESCRIPTION

[0022] The subject matter described herein will now be discussed with reference to example implementations. It should be understood that the discussion of these implementations is only intended to enable those skilled in the art to better understand and implement the subject matter described herein, and is not intended to limit the scope of protection, applicability, or examples set forth in the claims. The functions and arrangements of the elements discussed may be changed without departing from the scope of protection of the present specification. Various examples may omit, replace, or add various processes or components as needed. In addition, the features described relative to some examples may also be combined in other examples.

[0023] It should be noted that the references to "one embodiment", "embodiment", "some embodiments" and the like in the specification indicate that the embodiments described may include specific features, structures or characteristics, but not every embodiment may include the specific features, structures or characteristics. In addition, such expressions do not necessarily refer to the same embodiment. In addition, when specific features, structures or characteristics are described in conjunction with an embodiment, it should be within the knowledge of technicians in the relevant field to implement such features, structures or characteristics in conjunction with other embodiments that are explicitly or not explicitly described.

[0024] The embodiments of the present invention may be described with reference to the accompanying drawings. Unless explicitly stated, the dimensions of the accompanying drawings are intended to simplify the examples rather than to describe relative dimensions. For example, the various lengths / widths / heights of the elements in the accompanying drawings may not be drawn to scale unless otherwise indicated.

[0025] An embodiment of a test system for testing transient photoelectric performance of a semiconductor photoelectric device according to the present invention will now be described with reference to the accompanying drawings.

[0026] Figure 1 FIG. 1 is a schematic diagram of a test system 100 for testing transient photoelectric performance of a semiconductor photoelectric device according to an embodiment of the present invention. Figure 1 As shown in , the test system 100 includes a test bench 101, a potentiometer 102, a signal generator 103, a steady-state light source 104, a transient pulse light source 105, a pulse delay generator 106, an optical path selection unit 107, a light intensity adjustment unit 108, a signal acquisition unit 109 and a control unit 110.

[0027] The test bench 101 is used to place the semiconductor optoelectronic device 111 to be tested. The semiconductor optoelectronic device 111 to be tested may include, for example, any one of a solar cell (e.g., a crystalline silicon solar cell, a thin film solar cell, an organic solar cell, a perovskite solar cell, etc.), a PN type photodetector, and a PIN type photodetector, but the present disclosure is not limited thereto. In some embodiments, the test bench 101 may include an electrode fixture for fixing the semiconductor optoelectronic device 111 to be tested and a position adjustment unit (not shown) for adjusting the position of the semiconductor optoelectronic device 111 to be tested. The position adjustment unit may include, for example, a three-dimensional translation stage, which may be manually operated or driven by a motor.

[0028] The steady-state light source 104 is used to emit steady-state light to illuminate the semiconductor optoelectronic device 111 to be tested, so that steady-state photogenerated carriers are excited inside the semiconductor optoelectronic device 111 to be tested, thereby generating a steady-state photovoltage signal. Figure 1 As shown in , the steady-state light source 104 includes a steady-state light source power module 104-1 and an LED light source 104-2. The steady-state light source power module 104-1 adjusts the current applied to the LED light source 104-2, so that the light intensity of the LED light source 104-2 can be adjusted. In one embodiment, the LED light source 104-2 may include, for example, a white light LED light source that emits white light, but the present disclosure is not limited thereto.

[0029] The transient pulse light source 105 is used to emit pulse light to illuminate the semiconductor optoelectronic device 111 to be tested, so as to excite transient photogenerated carriers inside the semiconductor optoelectronic device 111 to be tested, thereby generating a transient photovoltage signal. Figure 1 As shown in , the transient pulse light source 105 includes a pulse light source controller 105-1 and a laser 105-2. The pulse light source controller 105-1 can output a TTL level synchronized with the pulse light emitted by the laser 105-2 to control the pulse light emitted by the laser 105-2. In one embodiment, the transient pulse light source 105 may include, for example, a nanosecond laser. For example, the main parameters of the nanosecond laser may include a wavelength of 532nm, a frequency of 10Hz, a pulse width of 5ns, a maximum single pulse energy of 10uJ / Pulse, and are continuously adjustable, but the present disclosure is not limited thereto.

[0030] The optical path selection unit 107 is disposed between the steady-state light source 104 and the semiconductor optoelectronic device 111 to be tested, and between the transient pulse light source 105 and the semiconductor optoelectronic device 111 to be tested, so as to cut off or start the irradiation of the steady-state light emitted by the steady-state light source 104 and the pulse light emitted by the transient pulse light source 105 on the semiconductor optoelectronic device 111 to be tested. As further described below, when the test system 100 is configured to perform a linear boost charge extraction test on the semiconductor optoelectronic device 111 to be tested, the optical path selection unit 107 cuts off the irradiation of the steady-state light emitted by the steady-state light source 104 on the semiconductor optoelectronic device 111 to be tested. In one embodiment, the optical path selection unit 107 may include, for example, a dual-channel electrically controlled optical shutter, and by controlling the switch of the optical shutter, the irradiation of the steady-state light emitted by the steady-state light source 104 and the pulse light emitted by the transient pulse light source 105 on the semiconductor optoelectronic device 111 to be tested may be cut off or started, but the present disclosure is not limited thereto.

[0031] The light intensity adjustment unit 108 is disposed between the transient pulse light source 105 and the semiconductor optoelectronic device 111 to be tested, so as to adjust the light intensity of the pulse light emitted by the transient pulse light source 105, thereby adjusting the number of transient photogenerated carriers generated inside the semiconductor optoelectronic device 111 to be tested. Figure 1 As shown in FIG. 1 , the light intensity adjustment unit 108 is disposed between the transient pulse light source 105 and the light path selection unit 107. In one embodiment, the light intensity adjustment unit 108 may include, for example, a gradient attenuation sheet that can be controlled by the control unit 110, but the present disclosure is not limited thereto.

[0032] The signal acquisition unit 109 and the semiconductor photoelectric device 111 to be tested fixed on the electrode fixture form a test loop and are configured to collect the steady-state photovoltage signal and the transient photovoltage signal generated by the semiconductor photoelectric device 111 to be tested. In one embodiment, the signal acquisition unit 109 may include, for example, a digital oscilloscope, but the present disclosure is not limited thereto. In addition, as Figure 1 As shown, the potentiometer 102 is arranged in parallel at both ends of the signal acquisition unit 109 , and its resistance value can be controlled by the control unit 110 .

[0033] The signal generator 103 is used to generate a pulse voltage signal to be selectively loaded in a test loop formed by the signal acquisition unit 109 and the semiconductor optoelectronic device 111 to be tested. As further described below, when the test system 100 is configured to perform a linear boost charge extraction test, the signal generator 103 is connected between the signal acquisition unit 109 and the semiconductor optoelectronic device 111 to be tested, and the pulse voltage signal generated by the signal generator is loaded in the test loop. When the test system 100 is configured to perform a transient photovoltage test and a transient photocurrent test of the semiconductor optoelectronic device 111 to be tested, the signal generator 103 is bypassed from the test loop.

[0034] The pulse delay generator 106 is connected between the signal generator 103 and the pulse light source controller 105-1, and is also connected to the signal acquisition unit 109. The pulse delay generator 106 is used to adjust the pulse time delay between the pulse voltage signal generated by the signal generator 103 and the pulse light emitted by the transient pulse light source 105. The synchronization signal output by the pulse light source controller 105-1 can be used as an external trigger signal, and the voltage pulse generated by the signal generator 103 and the laser pulse emitted by the transient pulse light source 105 can be synchronized by the method of external triggering of the signal generator pulse train, and the delay time t between the two can be adjusted by adjusting the trigger time delay by the pulse delay generator 106. delay In addition, the synchronization signal output by the pulse light source controller 105 - 1 can also synchronously trigger the signal acquisition unit 109 to perform data acquisition.

[0035] like Figure 1 As shown in the figure, the control unit 110 is connected to the potentiometer 102, the signal generator 103, the steady-state light source power module 104-1, the pulse light source controller 105-1, the pulse delay generator 106, the optical path selection unit 107, the light intensity adjustment unit 108 and the signal acquisition unit 109, and controls the operation of these components so that the test system 100 can be configured to perform any one of the linear boost charge extraction test, the transient photovoltage test and the transient photocurrent test, as will be further described below.

[0036] Figure 2 Shows that when using Figure 1 The test system 100 is a simplified schematic diagram of a semiconductor optoelectronic device 111 to be tested for carrier mobility testing. When the test system 100 is configured to perform a carrier mobility test on a semiconductor optoelectronic device 111 to be tested (e.g., a perovskite solar cell or a PIN-type photodetector, etc.), the control unit 110 cuts off the irradiation of the semiconductor optoelectronic device 111 to be tested with steady-state light emitted by the steady-state light source 104 by closing the optical shutter. In this case, Figure 1 The test system 100 shown can be simplified as follows Figure 2 as shown in .

[0037] When performing a carrier mobility test on a semiconductor optoelectronic device 111 to be tested (for example, a perovskite solar cell or a PIN-type photodetector, etc.), the semiconductor optoelectronic device 111 to be tested is first fixed to the test bench 101 through an electrode clamp, so that the semiconductor optoelectronic device 111 to be tested and the signal acquisition unit 109 form a test loop.

[0038] In some embodiments, using Figure 2The test system 100 shown in the figure performs a linear boost charge extraction test on a semiconductor optoelectronic device 111 to be tested (e.g., a perovskite solar cell), including: (1) the control unit 110 sets the resistance value of the potentiometer 102 to a first resistance value (e.g., 50 ohms); (2) the control unit 110 controls the signal generator 103 to generate a linearly increasing pulse voltage U=AT, where A is a linear coefficient and T is a voltage pulse width, so as to be loaded in a test loop formed by the semiconductor optoelectronic device 111 to be tested and the signal acquisition unit 109; (3) the control unit 110 controls the transient pulse light source 105 to emit pulse light to illuminate the semiconductor optoelectronic device 111 to be tested; (4) the control unit 110 controls the signal acquisition unit 109 to acquire the transient voltage change at both ends of the potentiometer 102, so as to obtain the charge extraction dynamic process J(t) of the semiconductor optoelectronic device 111 to be tested under the combined action of the electrical pulse and the optical pulse; (5) based on the acquired charge extraction dynamic process J(t), the time t from the minimum value to the peak value of the current is obtained. max ; and (6) obtaining the carrier mobility of the semiconductor optoelectronic device 111 to be tested based on the following formula,

[0039]

[0040] Wherein, d is the effective thickness of the semiconductor optoelectronic device 111 to be tested, and A is the linear coefficient of the pulse voltage generated by the signal generator 103 .

[0041] In some embodiments, the voltage linear increase coefficient A and the voltage pulse width T generated by the signal generator 103 may be adjusted according to the test requirements of the semiconductor optoelectronic device 111 to be tested.

[0042] Figure 3 Shows that when using Figure 1 The test system 100 is a simplified schematic diagram of a semiconductor optoelectronic device 111 to be tested for transient photovoltage and transient photocurrent testing. When the test system 100 is configured to perform transient photovoltage and transient photocurrent testing on a semiconductor optoelectronic device 111 to be tested (e.g., a thin-film solar cell or a PN-type photodetector, etc.), the control unit 110 controls the signal generator 103 and the pulse delay generator 106 to be bypassed from the test loop formed by the semiconductor optoelectronic device 111 to be tested and the signal acquisition unit 109. In this case, Figure 1 The test system 100 shown can be simplified as follows Figure 3 as shown in .

[0043] When the semiconductor optoelectronic device 111 to be tested (for example, a thin-film solar cell or a PN-type photodetector, etc.) is tested for transient photovoltage and transient photocurrent, the semiconductor optoelectronic device 111 to be tested is first fixed to the test bench 101 through an electrode fixture, so that the semiconductor optoelectronic device 111 to be tested and the signal acquisition unit 109 form a test loop. In addition, the control unit 110 controls the steady-state light source power supply module 104-1 and the pulse light source controller 105-1, so that the LED light source 104-2 and the laser 105-2 emit steady-state light and pulse light respectively, and turns on the optical path selection unit 107, and adjusts the optical paths of the steady-state light source 104 and the transient pulse light source 105 so that the light spot of the steady-state light and the light spot of the transient pulse light overlap on the semiconductor optoelectronic device 111 to be tested.

[0044] In some embodiments, using Figure 3 The test system 100 shown in FIG. 1 may perform transient photovoltage and transient photocurrent tests on a semiconductor optoelectronic device 111 (eg, a thin film solar cell or a PN type photodetector, etc.) to be tested, and may include:

[0045] (1) In the control unit 110, an initial steady-state photovoltage V generated by the steady-state light emitted by the steady-state light source 104 inside the semiconductor optoelectronic device 111 to be tested is set. in_sp , initial steady-state photovoltage V in_sp The maximum value V in_spmax (For example, for photovoltaic devices, V in_spmax It can be the open circuit voltage V under the bias light intensity of one sun constant intensity oc ) and the initial steady-state photovoltage V in_sp The scanning gradient of

[0046] (2) The control unit 110 sets the resistance value of the potentiometer 102 to a second resistance value (e.g., 1 megohm);

[0047] (3) The control unit 110 turns off the optical path selection unit 107 disposed between the transient pulse light source 105 and the semiconductor optoelectronic device 111 to be tested, thereby cutting off the irradiation of the pulse light on the semiconductor optoelectronic device 111 to be tested, and at the same time, turns on and adjusts the light intensity of the steady-state light emitted by the steady-state light source 104 until the steady-state photovoltage V generated inside the semiconductor optoelectronic device 111 to be tested is greater than 100%. sp Satisfy the preset steady-state conditions, such as |V sp -V in_sp |<3mv;

[0048] (4) While maintaining the steady-state light emitted by the steady-state light source 104 to irradiate the semiconductor optoelectronic device 111 to be tested, start and adjust the pulse light emitted by the transient pulse light source 105 to irradiate the semiconductor optoelectronic device 111 to be tested until the transient photovoltage V generated by the semiconductor optoelectronic device 111 to be tested isip Satisfy the perturbation conditions, such as

[0049] (5) maintaining the light intensity of the steady-state light emitted by the steady-state light source 104 and the pulse light emitted by the transient pulse light source 105 unchanged, the control unit 110 controls the signal acquisition unit 109 to acquire the attenuation curve ΔV(t) of the transient photovoltage signal of the semiconductor optoelectronic device 111 to be tested, the transient photovoltage amplitude V, and the time t1 required for the transient photovoltage to decay by 10%-90%, and sets the first window parameters of the signal acquisition unit 109 (for example, the size of the horizontal window H1 and the vertical window V1 of the signal acquisition unit 109);

[0050] (6) The control unit 110 determines whether the attenuation curve ΔV(t) of the transient photovoltage signal is complete. If the transient photovoltage amplitude V and the time t1 required for the transient photovoltage to decay by 10%-90% meet the first window parameters (for example, the transient photovoltage amplitude V is greater than 80% of the vertical window V1 of the signal acquisition unit 109 and less than 90% of the vertical window V1 of the signal acquisition unit 109, and t1 is greater than 80% of the horizontal window H1 of the signal acquisition unit 109 and less than 90% of the horizontal window H1 of the signal acquisition unit 109), then the acquired attenuation curve ΔV(t) is complete, and the process proceeds to step (7); if the transient photovoltage amplitude V and the time t1 required for the transient photovoltage to decay by 10%-90% do not meet the first window parameters, the process proceeds to step (5) to reset the first window parameters;

[0051] (7) The control unit 110 controls the signal acquisition unit 109 to acquire and record the decay curve ΔV(t) of the complete transient photovoltage signal;

[0052] (8) The control unit 110 sets the resistance value of the potentiometer 102 to a third resistance value (for example, less than 50 ohms);

[0053] (9) The control unit 110 controls the signal acquisition unit 109 to acquire the decay curve Δj(t) of the transient photocurrent of the semiconductor optoelectronic device 111 to be tested, the transient photocurrent amplitude I, and the time t2 required for the transient photocurrent to decay by 10%-90%, and sets the second window parameters of the signal acquisition unit (for example, the size of the horizontal window H2 and the vertical window V2 of the signal acquisition unit 109);

[0054] (10) The control unit 110 determines whether the acquired decay curve Δj(t) of the transient photocurrent is complete. If the transient photocurrent amplitude I and the time t2 required for the transient photocurrent to decay by 10%-90% meet the second window parameters (for example, the transient photocurrent amplitude I is greater than 80% and less than 90% of the vertical window V2 of the signal acquisition unit 109, and t2 is greater than 80% and less than 90% of the horizontal window H2 of the signal acquisition unit 109), then the acquired decay curve Δj(t) is complete, and the process proceeds to step (11); if the transient photocurrent amplitude I and the time t2 required for the transient photocurrent to decay by 10%-90% do not meet the second window parameters, the process proceeds to step (9) to reset the second window parameters;

[0055] (11) the control unit 110 controls the signal acquisition unit 109 to acquire and record the decay curve Δj(t) of the complete transient photocurrent signal; and

[0056] (12) The control unit 110 sequentially changes the initial steady-state photovoltage V according to the set scanning gradient. in_sp Repeat steps (2) to (11) until the initial steady-state photovoltage V in_sp Reaching the maximum value V in_spmax , to control the signal acquisition unit 109 to acquire and record the complete attenuation curves ΔV(t) and Δj(t).

[0057] In some embodiments, using Figure 3 The test system 100 shown in the figure performs a transient photovoltage test on a semiconductor optoelectronic device 111 (e.g., a thin film solar cell or a PN type photodetector, etc.) to be tested, and further includes fitting the entire decay curve ΔV(t) of the transient photovoltage signal collected by the signal collection unit 109 through the following formula to determine the carrier recombination lifetime τ of the semiconductor optoelectronic device 111 to be tested n .

[0058]

[0059] In some embodiments, using Figure 3 The test system 100 shown in the figure performs a transient photocurrent test on a semiconductor optoelectronic device 111 (e.g., a thin film solar cell or a PN type photodetector, etc.) to be tested, and further includes fitting the entire decay curve Δj(t) of the transient photocurrent signal collected by the signal collection unit 109 through the following formula to determine the charge extraction time τ of the semiconductor optoelectronic device 111: j , carrier diffusion coefficient D n , carrier diffusion length L n , and the charge extraction efficiency η col .

[0060]

[0061] The test system according to the utility model can test the carrier lifetime and diffusion coefficient of diffusion-type semiconductor optoelectronic devices (for example, crystalline silicon solar cells, thin-film solar cells, and PN-type photodetectors, etc.), and can also test the carrier mobility of drift-type semiconductor optoelectronic devices (for example, organic solar cells, perovskite solar cells, and PIN-type photodetectors, etc.), thereby realizing transient photoelectric performance testing of different semiconductor optoelectronic devices in a set of test systems.

[0062] It should be noted that not all steps and units in the above-mentioned operation processes and devices are necessary, and some steps or units can be ignored according to actual needs. The execution order of each step is not fixed and can be determined as needed. The device structure described in the above-mentioned embodiments can be a physical structure or a logical structure, that is, some units may be implemented by the same physical entity, or some units may be implemented by multiple physical entities, or some components in multiple independent devices may be implemented together.

[0063] Control unit has been described in conjunction with various devices and operations. The control unit can be implemented using electronic hardware, computer software or any combination thereof. Whether the control unit is implemented as hardware or software will depend on specific application and the overall design constraints imposed on the system. As an example, the control unit provided in the present disclosure, any part of the control unit or any combination of the control unit can be implemented as a microprocessor, a microcontroller, a digital signal processor (DSP), a field programmable gate array (FPGA), a programmable logic device (PLD), a state machine, a gate logic, a discrete hardware circuit and other suitable processing components configured to perform the various functions described in the present disclosure. The function of the control unit provided in the present disclosure, any part of the control unit or any combination of the control unit can also be implemented as software performed by a microprocessor, a microcontroller, a DSP or other suitable platforms.

[0064] The above description of the utility model is provided to enable any person of ordinary skill in the art to implement or use the present disclosure. Various modifications to the utility model will be apparent to those of ordinary skill in the art, and the general principles defined in the utility model may be applied to other variations without departing from the scope of protection of the utility model. Therefore, the utility model is not limited to the examples and designs described herein, but is consistent with the widest range of principles and novel features disclosed herein.

Claims

1. A test system for testing transient photoelectric performance of semiconductor photoelectric devices, comprising: A test bench, the test bench comprising an electrode fixture for fixing a semiconductor optoelectronic device to be tested; A steady-state light source configured to emit steady-state light to illuminate the semiconductor optoelectronic device to be tested, thereby generating a steady-state photovoltage signal inside the semiconductor optoelectronic device to be tested; A transient pulse light source, the transient pulse light source being configured to emit pulse light to illuminate the semiconductor optoelectronic device to be tested, thereby generating a transient photovoltage signal inside the semiconductor optoelectronic device to be tested; an optical path selection unit, the optical path selection unit being arranged between the steady-state light source and the semiconductor optoelectronic device to be tested and between the transient pulse light source and the semiconductor optoelectronic device to be tested, so as to cut off or start the irradiation of the steady-state light and the pulse light on the semiconductor optoelectronic device to be tested; A light intensity adjustment unit, which is arranged between the transient pulse light source and the semiconductor optoelectronic device to be tested, and is used to adjust the pulse light; A signal acquisition unit, wherein the signal acquisition unit and the semiconductor optoelectronic device to be tested fixed on the electrode fixture form a test loop and is configured to acquire a steady-state photovoltage signal and a transient photovoltage signal; A potentiometer, wherein the potentiometer is arranged at two ends of the signal acquisition unit in parallel; a signal generator configured to generate a pulse voltage signal to selectively load the test loop; as well as A control unit, wherein the control unit is connected to and controls the steady-state light source, the transient pulse light source, the optical path selection unit, the light intensity adjustment unit, the signal acquisition unit, the potentiometer, and the signal generator, so that the test system can be configured to perform any one of a linear boost charge extraction test, a transient photovoltage test, and a transient photocurrent test.

2. The test system according to claim 1, characterized in that: When the test system is configured to perform the linear boost charge extraction test, the control unit controls the optical path selection unit to cut off the irradiation of the steady-state light to the semiconductor optoelectronic device under test.

3. The test system according to claim 1, characterized in that: When the test system is configured to perform the transient photovoltage test and the transient photocurrent test, the control unit controls the signal generator to be bypassed from the test loop.

4. The test system according to claim 1, characterized in that: It also includes a pulse delay generator connected between the signal generator and the transient pulse light source, the pulse delay generator is connected to the control unit and the signal acquisition unit, and is configured to adjust the pulse time delay between the pulse voltage signal and the pulse light.

5. The test system according to claim 1, characterized in that: The steady-state light source includes an LED light source.

6. The test system according to claim 5, characterized in that: The LED light source includes a white light LED light source.

7. The test system according to claim 1, characterized in that: The transient pulse light source includes a nanosecond laser.

8. The test system according to claim 1, characterized in that: The signal acquisition unit includes a digital oscilloscope.

9. The test system according to claim 1, characterized in that: The optical path selection unit includes a dual-channel electrically controlled optical shutter.

10. The test system according to claim 1, characterized in that: The light intensity adjustment unit includes a gradient attenuation sheet.

11. The test system according to claim 1, characterized in that: The semiconductor optoelectronic device to be tested includes any one of a crystalline silicon solar cell, a thin film solar cell, an organic solar cell, a perovskite solar cell, a PN type photodetector and a PIN type photodetector.

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